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NCP171AMX180175TCG NCP171AMX180175TCG onsemi ncp171-d.pdf Description: IC REG LINEAR 1.8V 80MA 4XDFN
на замовлення 17835 шт:
термін постачання 21-31 дні (днів)
4+83.08 грн
10+ 71.77 грн
25+ 68.14 грн
100+ 52.53 грн
250+ 49.1 грн
500+ 43.39 грн
1000+ 33.7 грн
Мінімальне замовлення: 4
NCV8406BDTRKG NCV8406BDTRKG onsemi ncv8406-d.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 185mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7025 шт:
термін постачання 21-31 дні (днів)
3+117.56 грн
10+ 101.89 грн
25+ 96.09 грн
100+ 72.15 грн
250+ 63.13 грн
500+ 61.32 грн
1000+ 47.9 грн
Мінімальне замовлення: 3
NTMYS014N06CLTWG NTMYS014N06CLTWG onsemi ntmys014n06cl-d.pdf Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 8880 шт:
термін постачання 21-31 дні (днів)
2+178.7 грн
10+ 110.87 грн
100+ 76.02 грн
500+ 57.31 грн
1000+ 52.79 грн
Мінімальне замовлення: 2
NTMYS025N06CLTWG NTMYS025N06CLTWG onsemi ntmys025n06cl-d.pdf Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 8143 шт:
термін постачання 21-31 дні (днів)
2+171.64 грн
10+ 106.57 грн
100+ 72.88 грн
500+ 54.86 грн
1000+ 50.5 грн
Мінімальне замовлення: 2
NTMYS2D4N04CTWG NTMYS2D4N04CTWG onsemi ntmys2d4n04c-d.pdf Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
2+166.16 грн
10+ 132.6 грн
100+ 105.58 грн
500+ 83.83 грн
1000+ 71.13 грн
Мінімальне замовлення: 2
NTMYS8D0N04CTWG NTMYS8D0N04CTWG onsemi ntmys8d0n04c-d.pdf Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
LC898150XH-MH onsemi Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
товар відсутній
MJD122RLG MJD122RLG onsemi Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товар відсутній
MJD127RLG MJD127RLG onsemi Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товар відсутній
MJD2955RLG MJD2955RLG onsemi Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товар відсутній
NCP4371AADDR2G NCP4371AADDR2G onsemi ncp4371-d.pdf Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
товар відсутній
NCP4371BBCDDR2G NCP4371BBCDDR2G onsemi ncp4371-d.pdf Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
товар відсутній
NL27WZ16DBVT1G onsemi nl27wz16-d.pdf Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
товар відсутній
NRVBS260T3G-RG01 NRVBS260T3G-RG01 onsemi mbrs260t3-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVBSS26T3G-RG01 NRVBSS26T3G-RG01 onsemi ss26-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NSS60200DMTTBG NSS60200DMTTBG onsemi nss20201dmt-d.pdf Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
товар відсутній
SZESD5Z3.3T5G SZESD5Z3.3T5G onsemi esd5z2.5t1-d.pdf Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
товар відсутній
AR0230CSSC12SUEA0-DP onsemi AR0230CS_Rev11_8-31-17.pdf Description: IMAGE SENSOR CMOS IBGA80
товар відсутній
AR0237CSSC12SHRA0-DP AR0237CSSC12SHRA0-DP onsemi Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
товар відсутній
HCPL2611SM HCPL2611SM onsemi ONSM-S-A0003591003-1.pdf?t.download=true&u=5oefqw Description: OPTOCOUPLER LOGIC 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
MJD122-1G MJD122-1G onsemi Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товар відсутній
MOC3053SR2M MOC3053SR2M onsemi ONSM-S-A0003587739-1.pdf?t.download=true&u=5oefqw Description: OPTOISOLATOR 6PW RP TRIAC 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
товар відсутній
MARS1-AR0233ATSCS-GEVB MARS1-AR0233ATSCS-GEVB onsemi Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0233AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+23512.5 грн
MARS1-KSZ8081MNX-GEVB onsemi Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
MARS1-MAX9295A-GEVK MARS1-MAX9295A-GEVK onsemi Description: EVAL BOARD IMAGE SENSOR
товар відсутній
MARS1-MAX9296B-GEVB onsemi Description: EVAL BOARD IMAGE SENSOR
товар відсутній
SPSDEVK1-CER-GEVK onsemi Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK1-PCB-GEVK onsemi Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK2MT-GEVK onsemi Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK2-PCB-GEVK onsemi Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK2-PET-GEVK onsemi Description: EVAL SMART PASSIVE SENSOR
Packaging: Box
Type: RFID Reader
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
товар відсутній
FDD4141-F085P FDD4141-F085P onsemi FDD4141_F085-D_Rev4_Nov2018.pdf Description: MOSFET P-CH 40V 10.8A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FSL538HPG FSL538HPG onsemi fsl538hr-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
3+125.4 грн
10+ 108.38 грн
25+ 102.22 грн
100+ 81.74 грн
250+ 76.76 грн
500+ 67.16 грн
1000+ 54.74 грн
2500+ 50.96 грн
5000+ 49.07 грн
Мінімальне замовлення: 3
NCP105AMX180TBG NCP105AMX180TBG onsemi ncp105-d.pdf Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.33V @ 150mA
Protection Features: Current Limit
товар відсутній
NCP139AFCT105T2G NCP139AFCT105T2G onsemi ncp139-d.pdf Description: IC REG LINEAR 1.05V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Under Voltage Lockout (UVLO)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+15.14 грн
Мінімальне замовлення: 5000
LC898249XHTBG onsemi lc898249xh-d.pdf Description: AF CONTROL DRIVER
товар відсутній
NCV51705MNTWG NCV51705MNTWG onsemi ncv51705-d.pdf Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFNW (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
NCV7357MW3R2G NCV7357MW3R2G onsemi ncv7357-d.pdf Description: IC TRANSCEIVER FULL 2/2 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-DFNW (3x3)
Duplex: Full
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1509 шт:
термін постачання 21-31 дні (днів)
3+116.78 грн
10+ 100.3 грн
25+ 95.19 грн
100+ 68.6 грн
250+ 60.62 грн
500+ 57.43 грн
1000+ 43.94 грн
Мінімальне замовлення: 3
NCV8187AMN120TAG NCV8187AMN120TAG onsemi ncv8187-d.pdf Description: IC REG LINEAR 1.2V 1.2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
на замовлення 5028 шт:
термін постачання 21-31 дні (днів)
6+59.56 грн
10+ 50.57 грн
25+ 47.52 грн
100+ 33.81 грн
250+ 28.77 грн
500+ 27.33 грн
1000+ 20.52 грн
2500+ 19.1 грн
Мінімальне замовлення: 6
NCV8187AMT120TAG NCV8187AMT120TAG onsemi ncv8187-d.pdf Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
на замовлення 4217 шт:
термін постачання 21-31 дні (днів)
6+53.3 грн
10+ 44.83 грн
25+ 42.11 грн
100+ 29.96 грн
250+ 25.5 грн
500+ 24.22 грн
1000+ 18.18 грн
Мінімальне замовлення: 6
NIS5021MT2TXG onsemi NIS5020-21_NIS5820_Rev3_Jul2019.pdf Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 18V
Current - Output: 12A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (4x4)
Part Status: Obsolete
на замовлення 2514 шт:
термін постачання 21-31 дні (днів)
2+166.16 грн
10+ 143.85 грн
25+ 135.73 грн
100+ 108.52 грн
250+ 101.9 грн
500+ 89.16 грн
1000+ 72.66 грн
Мінімальне замовлення: 2
NTTFS010N10MCLTAG NTTFS010N10MCLTAG onsemi nttfs010n10mcl-d.pdf Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
на замовлення 61142 шт:
термін постачання 21-31 дні (днів)
3+154.4 грн
10+ 95.32 грн
100+ 64.79 грн
500+ 48.53 грн
Мінімальне замовлення: 3
NVB150N65S3F NVB150N65S3F onsemi nvb150n65s3f-d.pdf Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1483 шт:
термін постачання 21-31 дні (днів)
1+358.96 грн
10+ 230.04 грн
100+ 164.34 грн
NVMFD6H852NLT1G NVMFD6H852NLT1G onsemi nvmfd6h852nl-d.pdf Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVMFD6H852NLWFT1G NVMFD6H852NLWFT1G onsemi nvmfd6h852nl-d.pdf Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVMJS1D5N04CLTWG NVMJS1D5N04CLTWG onsemi nvmjs1d5n04cl-d.pdf Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVMJS2D5N06CLTWG NVMJS2D5N06CLTWG onsemi nvmjs2d5n06cl-d.pdf Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMYS010N04CLTWG NVMYS010N04CLTWG onsemi nvmys010n04cl-d.pdf Description: MOSFET N-CH 40V 14A/38A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
4+94.05 грн
10+ 57.06 грн
100+ 37.8 грн
500+ 27.7 грн
1000+ 25.2 грн
Мінімальне замовлення: 4
NVMYS011N04CTWG NVMYS011N04CTWG onsemi nvmys011n04c-d.pdf Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Qualification: AEC-Q101
на замовлення 23990 шт:
термін постачання 21-31 дні (днів)
4+93.27 грн
10+ 56.98 грн
100+ 37.75 грн
500+ 27.67 грн
1000+ 25.17 грн
Мінімальне замовлення: 4
NVMYS014N06CLTWG NVMYS014N06CLTWG onsemi nvmys014n06cl-d.pdf Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10106 шт:
термін постачання 21-31 дні (днів)
4+100.32 грн
10+ 60.76 грн
100+ 40.39 грн
500+ 29.68 грн
1000+ 27.03 грн
Мінімальне замовлення: 4
NVMYS021N06CLTWG NVMYS021N06CLTWG onsemi nvmys021n06cl-d.pdf Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+60.35 грн
10+ 47.47 грн
100+ 36.93 грн
500+ 29.38 грн
1000+ 23.93 грн
Мінімальне замовлення: 6
NVMYS025N06CLTWG NVMYS025N06CLTWG onsemi nvmys025n06cl-d.pdf Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2660 шт:
термін постачання 21-31 дні (днів)
4+91.7 грн
10+ 55.25 грн
100+ 36.57 грн
500+ 26.76 грн
1000+ 24.33 грн
Мінімальне замовлення: 4
NVMYS3D3N06CLTWG NVMYS3D3N06CLTWG onsemi nvmys3d3n06cl-d.pdf Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17950 шт:
термін постачання 21-31 дні (днів)
2+159.88 грн
10+ 98.94 грн
100+ 67.46 грн
500+ 50.61 грн
1000+ 46.52 грн
Мінімальне замовлення: 2
NVMYS5D3N04CTWG NVMYS5D3N04CTWG onsemi nvmys5d3n04c-d.pdf Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
5+76.81 грн
10+ 60.45 грн
100+ 47 грн
500+ 37.39 грн
1000+ 30.46 грн
Мінімальне замовлення: 5
NVMYS7D3N04CLTWG NVMYS7D3N04CLTWG onsemi nvmys7d3n04cl-d.pdf Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8803 шт:
термін постачання 21-31 дні (днів)
5+67.4 грн
10+ 52.98 грн
100+ 41.22 грн
500+ 32.78 грн
1000+ 26.71 грн
Мінімальне замовлення: 5
NVTFS010N10MCLTAG NVTFS010N10MCLTAG onsemi nvtfs010n10mcl-d.pdf Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7172 шт:
термін постачання 21-31 дні (днів)
3+146.56 грн
10+ 90.42 грн
100+ 61.3 грн
500+ 45.81 грн
Мінімальне замовлення: 3
M74VHC1GT66DFT2G M74VHC1GT66DFT2G onsemi mc74vhc1gt66-d.pdf Description: IC SWITCH SPST-NOX1 40OHM SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 40Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 32531 шт:
термін постачання 21-31 дні (днів)
10+32.13 грн
14+ 23.17 грн
25+ 20.89 грн
100+ 13.55 грн
250+ 11.41 грн
500+ 9.27 грн
1000+ 7.02 грн
Мінімальне замовлення: 10
NTMFS4983NFT3G NTMFS4983NFT3G onsemi ntmfs4983nf-d.pdf Description: MOSFET N-CH 30V 22A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.7W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
товар відсутній
NCV-RSL10-101Q48-AVG NCV-RSL10-101Q48-AVG onsemi ncv-rsl10-d.pdf Description: IC RF TXRX+MCU 802.15.4 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.36GHz ~ 2.5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.18V ~ 3.3V
Power - Output: 3dBm
Protocol: Bluetooth v5.0, Thread, Zigbee®
Current - Receiving: 3mA ~ 3.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 4.6mA ~ 12mA
Supplier Device Package: 48-QFNW (7x7)
Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK
RF Family/Standard: 802.15.4, Bluetooth
Serial Interfaces: GPIO, I2C, SPI, PCM, UART
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NV24C08DWVLT3G NV24C08DWVLT3G onsemi nv24c08lv-d.pdf Description: IC EEPROM 8KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+18.03 грн
6000+ 16.75 грн
Мінімальне замовлення: 3000
NCP171AMX180175TCG ncp171-d.pdf
NCP171AMX180175TCG
Виробник: onsemi
Description: IC REG LINEAR 1.8V 80MA 4XDFN
на замовлення 17835 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+83.08 грн
10+ 71.77 грн
25+ 68.14 грн
100+ 52.53 грн
250+ 49.1 грн
500+ 43.39 грн
1000+ 33.7 грн
Мінімальне замовлення: 4
NCV8406BDTRKG ncv8406-d.pdf
NCV8406BDTRKG
Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 185mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7025 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+117.56 грн
10+ 101.89 грн
25+ 96.09 грн
100+ 72.15 грн
250+ 63.13 грн
500+ 61.32 грн
1000+ 47.9 грн
Мінімальне замовлення: 3
NTMYS014N06CLTWG ntmys014n06cl-d.pdf
NTMYS014N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 8880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+178.7 грн
10+ 110.87 грн
100+ 76.02 грн
500+ 57.31 грн
1000+ 52.79 грн
Мінімальне замовлення: 2
NTMYS025N06CLTWG ntmys025n06cl-d.pdf
NTMYS025N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 8143 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+171.64 грн
10+ 106.57 грн
100+ 72.88 грн
500+ 54.86 грн
1000+ 50.5 грн
Мінімальне замовлення: 2
NTMYS2D4N04CTWG ntmys2d4n04c-d.pdf
NTMYS2D4N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+166.16 грн
10+ 132.6 грн
100+ 105.58 грн
500+ 83.83 грн
1000+ 71.13 грн
Мінімальне замовлення: 2
NTMYS8D0N04CTWG ntmys8d0n04c-d.pdf
NTMYS8D0N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
LC898150XH-MH
Виробник: onsemi
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
товар відсутній
MJD122RLG
MJD122RLG
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товар відсутній
MJD127RLG
MJD127RLG
Виробник: onsemi
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товар відсутній
MJD2955RLG
MJD2955RLG
Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товар відсутній
NCP4371AADDR2G ncp4371-d.pdf
NCP4371AADDR2G
Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
товар відсутній
NCP4371BBCDDR2G ncp4371-d.pdf
NCP4371BBCDDR2G
Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
товар відсутній
NL27WZ16DBVT1G nl27wz16-d.pdf
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
товар відсутній
NRVBS260T3G-RG01 mbrs260t3-d.pdf
NRVBS260T3G-RG01
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVBSS26T3G-RG01 ss26-d.pdf
NRVBSS26T3G-RG01
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NSS60200DMTTBG nss20201dmt-d.pdf
NSS60200DMTTBG
Виробник: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
товар відсутній
SZESD5Z3.3T5G esd5z2.5t1-d.pdf
SZESD5Z3.3T5G
Виробник: onsemi
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
товар відсутній
AR0230CSSC12SUEA0-DP AR0230CS_Rev11_8-31-17.pdf
Виробник: onsemi
Description: IMAGE SENSOR CMOS IBGA80
товар відсутній
AR0237CSSC12SHRA0-DP
AR0237CSSC12SHRA0-DP
Виробник: onsemi
Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
товар відсутній
HCPL2611SM ONSM-S-A0003591003-1.pdf?t.download=true&u=5oefqw
HCPL2611SM
Виробник: onsemi
Description: OPTOCOUPLER LOGIC 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
товар відсутній
MJD122-1G
MJD122-1G
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товар відсутній
MOC3053SR2M ONSM-S-A0003587739-1.pdf?t.download=true&u=5oefqw
MOC3053SR2M
Виробник: onsemi
Description: OPTOISOLATOR 6PW RP TRIAC 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
товар відсутній
MARS1-AR0233ATSCS-GEVB
MARS1-AR0233ATSCS-GEVB
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0233AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+23512.5 грн
MARS1-KSZ8081MNX-GEVB
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
MARS1-MAX9295A-GEVK
MARS1-MAX9295A-GEVK
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
товар відсутній
MARS1-MAX9296B-GEVB
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
товар відсутній
SPSDEVK1-CER-GEVK
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK1-PCB-GEVK
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK2MT-GEVK
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK2-PCB-GEVK
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
товар відсутній
SPSDEVK2-PET-GEVK
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Packaging: Box
Type: RFID Reader
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
товар відсутній
FDD4141-F085P FDD4141_F085-D_Rev4_Nov2018.pdf
FDD4141-F085P
Виробник: onsemi
Description: MOSFET P-CH 40V 10.8A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FSL538HPG fsl538hr-d.pdf
FSL538HPG
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+125.4 грн
10+ 108.38 грн
25+ 102.22 грн
100+ 81.74 грн
250+ 76.76 грн
500+ 67.16 грн
1000+ 54.74 грн
2500+ 50.96 грн
5000+ 49.07 грн
Мінімальне замовлення: 3
NCP105AMX180TBG ncp105-d.pdf
NCP105AMX180TBG
Виробник: onsemi
Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.33V @ 150mA
Protection Features: Current Limit
товар відсутній
NCP139AFCT105T2G ncp139-d.pdf
NCP139AFCT105T2G
Виробник: onsemi
Description: IC REG LINEAR 1.05V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Under Voltage Lockout (UVLO)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+15.14 грн
Мінімальне замовлення: 5000
LC898249XHTBG lc898249xh-d.pdf
Виробник: onsemi
Description: AF CONTROL DRIVER
товар відсутній
NCV51705MNTWG ncv51705-d.pdf
NCV51705MNTWG
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFNW (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
NCV7357MW3R2G ncv7357-d.pdf
NCV7357MW3R2G
Виробник: onsemi
Description: IC TRANSCEIVER FULL 2/2 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: 8-DFNW (3x3)
Duplex: Full
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1509 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+116.78 грн
10+ 100.3 грн
25+ 95.19 грн
100+ 68.6 грн
250+ 60.62 грн
500+ 57.43 грн
1000+ 43.94 грн
Мінімальне замовлення: 3
NCV8187AMN120TAG ncv8187-d.pdf
NCV8187AMN120TAG
Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
на замовлення 5028 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+59.56 грн
10+ 50.57 грн
25+ 47.52 грн
100+ 33.81 грн
250+ 28.77 грн
500+ 27.33 грн
1000+ 20.52 грн
2500+ 19.1 грн
Мінімальне замовлення: 6
NCV8187AMT120TAG ncv8187-d.pdf
NCV8187AMT120TAG
Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
на замовлення 4217 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+53.3 грн
10+ 44.83 грн
25+ 42.11 грн
100+ 29.96 грн
250+ 25.5 грн
500+ 24.22 грн
1000+ 18.18 грн
Мінімальне замовлення: 6
NIS5021MT2TXG NIS5020-21_NIS5820_Rev3_Jul2019.pdf
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 18V
Current - Output: 12A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (4x4)
Part Status: Obsolete
на замовлення 2514 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+166.16 грн
10+ 143.85 грн
25+ 135.73 грн
100+ 108.52 грн
250+ 101.9 грн
500+ 89.16 грн
1000+ 72.66 грн
Мінімальне замовлення: 2
NTTFS010N10MCLTAG nttfs010n10mcl-d.pdf
NTTFS010N10MCLTAG
Виробник: onsemi
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
на замовлення 61142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+154.4 грн
10+ 95.32 грн
100+ 64.79 грн
500+ 48.53 грн
Мінімальне замовлення: 3
NVB150N65S3F nvb150n65s3f-d.pdf
NVB150N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1483 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+358.96 грн
10+ 230.04 грн
100+ 164.34 грн
NVMFD6H852NLT1G nvmfd6h852nl-d.pdf
NVMFD6H852NLT1G
Виробник: onsemi
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVMFD6H852NLWFT1G nvmfd6h852nl-d.pdf
NVMFD6H852NLWFT1G
Виробник: onsemi
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NVMJS1D5N04CLTWG nvmjs1d5n04cl-d.pdf
NVMJS1D5N04CLTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVMJS2D5N06CLTWG nvmjs2d5n06cl-d.pdf
NVMJS2D5N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMYS010N04CLTWG nvmys010n04cl-d.pdf
NVMYS010N04CLTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/38A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+94.05 грн
10+ 57.06 грн
100+ 37.8 грн
500+ 27.7 грн
1000+ 25.2 грн
Мінімальне замовлення: 4
NVMYS011N04CTWG nvmys011n04c-d.pdf
NVMYS011N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Qualification: AEC-Q101
на замовлення 23990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+93.27 грн
10+ 56.98 грн
100+ 37.75 грн
500+ 27.67 грн
1000+ 25.17 грн
Мінімальне замовлення: 4
NVMYS014N06CLTWG nvmys014n06cl-d.pdf
NVMYS014N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+100.32 грн
10+ 60.76 грн
100+ 40.39 грн
500+ 29.68 грн
1000+ 27.03 грн
Мінімальне замовлення: 4
NVMYS021N06CLTWG nvmys021n06cl-d.pdf
NVMYS021N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+60.35 грн
10+ 47.47 грн
100+ 36.93 грн
500+ 29.38 грн
1000+ 23.93 грн
Мінімальне замовлення: 6
NVMYS025N06CLTWG nvmys025n06cl-d.pdf
NVMYS025N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2660 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+91.7 грн
10+ 55.25 грн
100+ 36.57 грн
500+ 26.76 грн
1000+ 24.33 грн
Мінімальне замовлення: 4
NVMYS3D3N06CLTWG nvmys3d3n06cl-d.pdf
NVMYS3D3N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+159.88 грн
10+ 98.94 грн
100+ 67.46 грн
500+ 50.61 грн
1000+ 46.52 грн
Мінімальне замовлення: 2
NVMYS5D3N04CTWG nvmys5d3n04c-d.pdf
NVMYS5D3N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+76.81 грн
10+ 60.45 грн
100+ 47 грн
500+ 37.39 грн
1000+ 30.46 грн
Мінімальне замовлення: 5
NVMYS7D3N04CLTWG nvmys7d3n04cl-d.pdf
NVMYS7D3N04CLTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8803 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+67.4 грн
10+ 52.98 грн
100+ 41.22 грн
500+ 32.78 грн
1000+ 26.71 грн
Мінімальне замовлення: 5
NVTFS010N10MCLTAG nvtfs010n10mcl-d.pdf
NVTFS010N10MCLTAG
Виробник: onsemi
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+146.56 грн
10+ 90.42 грн
100+ 61.3 грн
500+ 45.81 грн
Мінімальне замовлення: 3
M74VHC1GT66DFT2G mc74vhc1gt66-d.pdf
M74VHC1GT66DFT2G
Виробник: onsemi
Description: IC SWITCH SPST-NOX1 40OHM SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 40Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 32531 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.13 грн
14+ 23.17 грн
25+ 20.89 грн
100+ 13.55 грн
250+ 11.41 грн
500+ 9.27 грн
1000+ 7.02 грн
Мінімальне замовлення: 10
NTMFS4983NFT3G ntmfs4983nf-d.pdf
NTMFS4983NFT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 22A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.7W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
товар відсутній
NCV-RSL10-101Q48-AVG ncv-rsl10-d.pdf
NCV-RSL10-101Q48-AVG
Виробник: onsemi
Description: IC RF TXRX+MCU 802.15.4 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.36GHz ~ 2.5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.18V ~ 3.3V
Power - Output: 3dBm
Protocol: Bluetooth v5.0, Thread, Zigbee®
Current - Receiving: 3mA ~ 3.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 4.6mA ~ 12mA
Supplier Device Package: 48-QFNW (7x7)
Modulation: 4FSK, DSSS, FSK, GFSK, MSK, O-QPSK
RF Family/Standard: 802.15.4, Bluetooth
Serial Interfaces: GPIO, I2C, SPI, PCM, UART
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NV24C08DWVLT3G nv24c08lv-d.pdf
NV24C08DWVLT3G
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+18.03 грн
6000+ 16.75 грн
Мінімальне замовлення: 3000
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