| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NJVMJD45H11T4G | onsemi |
Description: TRANS PNP 80V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 90MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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NJVMJD45H11T4G | onsemi |
Description: TRANS PNP 80V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 90MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1416 шт: термін постачання 21-31 дні (днів) |
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NJVNJD2873T4G | onsemi |
Description: TRANS NPN 50V 2A DPAKQualification: AEC-Q101 Grade: Automotive Power - Max: 1.68 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: DPAK Frequency - Transition: 65MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: -65°C ~ 175°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NJVNJD2873T4G | onsemi |
Description: TRANS NPN 50V 2A DPAKPower - Max: 1.68 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: DPAK Frequency - Transition: 65MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: -65°C ~ 175°C (TJ) Transistor Type: NPN Qualification: AEC-Q101 Grade: Automotive Packaging: Cut Tape (CT) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
на замовлення 3914 шт: термін постачання 21-31 дні (днів) |
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NRVBS2040LT3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 40V 2A SMBPackage / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVBS240LT3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 40V 2A SMBQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVBS260T3G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVBS260T3G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVBS3200T3G | onsemi |
Description: DIODE SCHOTTKY 200V 3A SMBQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 mA @ 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVBS3200T3G | onsemi |
Description: DIODE SCHOTTKY 200V 3A SMBQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 mA @ 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NRVBSS26T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBPart Status: Active Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVD3055-150T4G | onsemi |
Description: MOSFET N-CH 60V 9A DPAKInput Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 28.8W (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVD3055-150T4G | onsemi |
Description: MOSFET N-CH 60V 9A DPAKCurrent - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 28.8W (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NVD3055L170T4G-VF01 | onsemi |
Description: MOSFET N-CH 60V 9A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V Power Dissipation (Max): 28.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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NVD3055L170T4G-VF01 | onsemi |
Description: MOSFET N-CH 60V 9A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V Power Dissipation (Max): 28.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBRS8140T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 40V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBRS8140T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 40V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NJVMJD32CT4G | onsemi |
Description: TRANS PNP 100V 3A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NJVMJD32CT4G | onsemi |
Description: TRANS PNP 100V 3A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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N24RF16DWPT3G | onsemi |
Description: RFID 16 KB EEPROMInterface: I2C Frequency: 13.56MHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Standards: ISO 15693, ISO 18000-3, NFC Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Type: RFID Transponder |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDBL9406L-F085 | onsemi |
Description: MOSFET N-CH 40V 43A/240A 8HPSOF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD3125 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8DIPVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 100ns Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 60ns, 60ns Supplier Device Package: 8-PDIP Approval Agency: UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2A, 2A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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FDMS86101E | onsemi |
Description: MOSFET N-CH 100V 12.4A/60A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NTHL050N65S3HF | onsemi |
Description: MOSFET N-CH 650V 58A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.7mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V |
на замовлення 1687 шт: термін постачання 21-31 дні (днів) |
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NTHL190N65S3HF | onsemi |
Description: MOSFET N-CH 650V 20A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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NTPF190N65S3HF | onsemi |
Description: MOSFET N-CH 650V 20A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V |
на замовлення 722 шт: термін постачання 21-31 дні (днів) |
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NTB095N65S3HF | onsemi |
Description: MOSFET N-CH 650V 36A D2PAK-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FGHL50T65SQ | onsemi |
Description: IGBT 650V 100A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 19ns/93ns Switching Energy: 410µJ (on), 88µJ (off) Test Condition: 400V, 25A, 4.7Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FFSH5065A-F155 | onsemi |
Description: DIODE SIL CARB 650V 60A TO247-3Current - Reverse Leakage @ Vr: 200 µA @ 650 V Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io): 60A Capacitance @ Vr, F: 2530pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 2803 шт: термін постачання 21-31 дні (днів) |
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NTMTS001N06CTXG | onsemi |
Description: MOSFET N-CH 60V 53.7A/376A 8DFNWPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc) Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 244W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SBAT54CWT3G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SC703Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SC-70-3 (SOT323) Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| ESDM1031MX4T5G | onsemi |
Description: ISOLATED X4DFN VRWM=3.3V Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
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STK554U392C-E | onsemi |
Description: 3 PHASE INVERTER IPMVoltage: 600 V Current: 15 A Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LV88564RTXG | onsemi |
Description: NON-AUTO BLDC MOTOR DRIVEMotor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: 20-VCT (3x3) Applications: General Purpose Voltage - Supply: 3.9V ~ 16V Output Configuration: Pre-Driver - Half Bridge Operating Temperature: -40°C ~ 105°C (TA) Interface: PWM Current - Output: 50mA Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 20-VFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ADD5043-915-1-GEVK | onsemi |
Description: AX5043 915MHZ DVK-2 ADD-ON BOARD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| FAN6248ADPGEVB | onsemi |
Description: EVAL NCP1616 NCP13992 FAN6248 Outputs and Type: 1, Isolated Main Purpose: AC/DC, Primary and Secondary Side Supplied Contents: Board(s) Utilized IC / Part: FAN6248 Board Type: Fully Populated Regulator Topology: Resonant Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FOD3125S | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Pulse Width Distortion (Max): 100ns Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 60ns, 60ns Supplier Device Package: 8-SMD Approval Agency: UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2A, 2A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.5V Package / Case: 8-SMD, Gull Wing Packaging: Bulk Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FUSB251UCX | onsemi |
Description: IC TYPE-C CC AND SBU PROTECTIONPackaging: Tape & Reel (TR) Package / Case: 15-UFBGA, WLCSP Function: Controller Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 15µA Protocol: USB Supplier Device Package: 15-WLCSP (1.49x2.06) Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
| LC05111C23MTTTG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6WDFN Part Status: Obsolete Fault Protection: Over Current Supplier Device Package: 6-WDFN (4x2.6), Dual Flag Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 85°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LV8549MCGEVB | onsemi |
Description: EVAL BRIDGE DR LV8549Primary Attributes: Motors (Stepper) Supplied Contents: Board(s) Utilized IC / Part: LV8549MC Type: Power Management Function: Motor Controller/Driver, Stepper Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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LV8968BBGEVB | onsemi |
Description: EVAL MOTOR DR LV8968BPart Status: Active Platform: Arduino Utilized IC / Part: LV8968BB Contents: Board(s) Type: Power Management Function: Motor Controller/Driver Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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LV8968BBUWR2G | onsemi |
Description: IC 3PHASE BLDC/PMSM PREDRPackaging: Tape & Reel (TR) Package / Case: 48-LQFP Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 8V ~ 28V Voltage - Load: 7V ~ 12V Supplier Device Package: 48-SQFP (7x7) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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| MICRORB-SMA-10020-GEVB | onsemi |
Description: EVAL SENSOR PHOTODIODE 905NM Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: MicroRB-10020 Sensor Type: Light, Silicon Photomultiplier (SiPM) Interface: Analog Packaging: Bulk |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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NCL2801LED1GEVB | onsemi |
Description: EVAL 200W PFCSupplied Contents: Board(s) Utilized IC / Part: NCL2801LED1 Type: Power Management Function: Power Factor Correction Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| NCP13992AIOGEVB | onsemi |
Description: EVAL BOARD FOR NCP431 NCP1616Packaging: Bulk Voltage - Output: 12V Voltage - Input: 95 ~ 265 VAC Current - Output: 20A Contents: Board(s) Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP431, NCP1616, NCP4306, NCP13992 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary and Secondary Side with PFC Outputs and Type: 1 Isolated Output Part Status: Active Power - Output: 240W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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NCP161ASN180T1G | onsemi |
Description: IC REG LINEAR 1.8V 450MA SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.48V @ 450mA Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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NCP163ASN280T1G | onsemi |
Description: IC REG LINEAR 2.8V 250MA SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 20 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 91dB ~ 60dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.19V @ 250mA Protection Features: Over Current, Over Temperature, Short Circuit, Soft Start |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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NCP81239GEVB | onsemi |
Description: EVAL BOARD FOR NCP81239Packaging: Bulk Voltage - Output: 5V, 9V, 15V or 20V Voltage - Input: 12V Contents: Board(s) Regulator Topology: Buck-Boost Board Type: Fully Populated Utilized IC / Part: NCP81239 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up or Down Outputs and Type: 1 Non-Isolated Output Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NCV57000DWR2G | onsemi |
Description: DGTL ISO 1.2KV 1CH GT DVR 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Technology: Capacitive Coupling Current - Output High, Low: 7.8A, 7.1A Voltage - Isolation: 1200Vrms Approval Agency: UL, VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Grade: Automotive Part Status: Active Number of Channels: 1 Voltage - Output Supply: 0V ~ 24V Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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NCV59749MNADJTBG | onsemi |
Description: IC REG LINEAR POS ADJ 3A 20QFNPackaging: Tape & Reel (TR) Package / Case: 20-VQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 20-QFN (5x5) Voltage - Output (Max): 3.6V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good, Soft Start Part Status: Active PSRR: 60dB ~ 30dB (1kHz ~ 300kHz) Voltage Dropout (Max): 0.28V @ 3A Protection Features: Current Limit, Thermal Shutdown |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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NCV7547MWTXG | onsemi |
Description: IC HALF BRIDGE DRIVER 48QFNWVoltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge (7) Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM, SPI Mounting Type: Surface Mount, Wettable Flank Package / Case: 48-VFQFN Exposed Pad Features: Charge Pump Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Load Type: Capacitive and Resistive Fault Protection: Over Load Supplier Device Package: 48-QFNW (7x7) Voltage - Load: 7V ~ 18V Technology: NMOS Applications: General Purpose |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NFAP1060L3TT | onsemi |
Description: IGBT IPM 600V 10A 29-PWRSSIP MODPackaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
на замовлення 118 шт: термін постачання 21-31 дні (днів) |
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NSVP264SDSF3T1G | onsemi |
Description: DIODE PIN 50V 100MW SC70/MCPH3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: SC-70 / MCP3 Part Status: Active Current - Max: 50 mA Power Dissipation (Max): 100 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NTHL033N65S3HF | onsemi |
Description: MOSFET N-CH 650V 70A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 6720 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 4452 шт: термін постачання 21-31 дні (днів) |
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NTP150N65S3HF | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
на замовлення 654 шт: термін постачання 21-31 дні (днів) |
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NTPF150N65S3HF | onsemi |
Description: MOSFET N-CH 650V 24A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
на замовлення 754 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C406NLT1G | onsemi |
Description: MOSFET N-CH 40V 53A/362A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 280µA Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Qualification: AEC-Q101 Grade: Automotive Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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NVTFS015N04CTAG | onsemi |
Description: MOSFET N-CH 40V 9.4A/27A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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STK544UC63K-E | onsemi |
Description: INTELLIGENT POWER MODULE 600V 10Packaging: Tube Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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NCP161ASN280T1G | onsemi |
Description: IC REG LINEAR 2.8V 450MA SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.345V @ 450mA Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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| NJVMJD45H11T4G |
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Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NJVMJD45H11T4G |
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Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1416 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.69 грн |
| 10+ | 60.42 грн |
| 100+ | 40.21 грн |
| 500+ | 29.58 грн |
| 1000+ | 26.95 грн |
| NJVNJD2873T4G |
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Виробник: onsemi
Description: TRANS NPN 50V 2A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 2A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.05 грн |
| NJVNJD2873T4G |
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Виробник: onsemi
Description: TRANS NPN 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: TRANS NPN 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
на замовлення 3914 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.61 грн |
| 10+ | 53.86 грн |
| 100+ | 35.45 грн |
| 500+ | 25.82 грн |
| 1000+ | 23.42 грн |
| NRVBS2040LT3G-VF01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 40V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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| NRVBS240LT3G-VF01 |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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| NRVBS260T3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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| NRVBS260T3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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| NRVBS3200T3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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| NRVBS3200T3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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| NRVBSS26T3G-VF01 |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 60V 2A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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| NVD3055-150T4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| NVD3055-150T4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Description: MOSFET N-CH 60V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
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| NVD3055L170T4G-VF01 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 2500 шт
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| NVD3055L170T4G-VF01 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| SBRS8140T3G-VF01 |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Description: DIODE SCHOTTKY 40V 1A SMB
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| SBRS8140T3G-VF01 |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Description: DIODE SCHOTTKY 40V 1A SMB
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| NJVMJD32CT4G |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.24 грн |
| NJVMJD32CT4G |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.88 грн |
| 10+ | 39.01 грн |
| 100+ | 25.43 грн |
| 500+ | 18.37 грн |
| 1000+ | 16.60 грн |
| N24RF16DWPT3G |
![]() |
Виробник: onsemi
Description: RFID 16 KB EEPROM
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
Description: RFID 16 KB EEPROM
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 43.07 грн |
| FDBL9406L-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 43A/240A 8HPSOF
Description: MOSFET N-CH 40V 43A/240A 8HPSOF
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| FOD3125 |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-PDIP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-PDIP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.04 грн |
| 50+ | 157.98 грн |
| 100+ | 148.11 грн |
| 500+ | 122.57 грн |
| FDMS86101E |
Виробник: onsemi
Description: MOSFET N-CH 100V 12.4A/60A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 12.4A/60A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| NTHL050N65S3HF |
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Виробник: onsemi
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
на замовлення 1687 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1068.86 грн |
| 30+ | 634.05 грн |
| 120+ | 547.42 грн |
| 510+ | 511.43 грн |
| NTHL190N65S3HF |
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Виробник: onsemi
Description: MOSFET N-CH 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
Description: MOSFET N-CH 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 485.77 грн |
| 30+ | 269.55 грн |
| 120+ | 225.89 грн |
| NTPF190N65S3HF |
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Виробник: onsemi
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 370.26 грн |
| 10+ | 237.93 грн |
| 100+ | 170.51 грн |
| 500+ | 133.07 грн |
| NTB095N65S3HF |
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Виробник: onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 232.08 грн |
| FGHL50T65SQ |
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Виробник: onsemi
Description: IGBT 650V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 19ns/93ns
Switching Energy: 410µJ (on), 88µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT 650V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 19ns/93ns
Switching Energy: 410µJ (on), 88µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
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| FFSH5065A-F155 |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 2803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1017.44 грн |
| 10+ | 863.04 грн |
| 100+ | 746.42 грн |
| NTMTS001N06CTXG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 94.15 грн |
| SBAT54CWT3G |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SC-70-3 (SOT323)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 30V 200MA SC703
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SC-70-3 (SOT323)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Qualification: AEC-Q101
Grade: Automotive
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| STK554U392C-E |
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Виробник: onsemi
Description: 3 PHASE INVERTER IPM
Voltage: 600 V
Current: 15 A
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Packaging: Tube
Description: 3 PHASE INVERTER IPM
Voltage: 600 V
Current: 15 A
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Packaging: Tube
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| LV88564RTXG |
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Виробник: onsemi
Description: NON-AUTO BLDC MOTOR DRIVE
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 20-VCT (3x3)
Applications: General Purpose
Voltage - Supply: 3.9V ~ 16V
Output Configuration: Pre-Driver - Half Bridge
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 50mA
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 20-VFQFN
Packaging: Tape & Reel (TR)
Description: NON-AUTO BLDC MOTOR DRIVE
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 20-VCT (3x3)
Applications: General Purpose
Voltage - Supply: 3.9V ~ 16V
Output Configuration: Pre-Driver - Half Bridge
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 50mA
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 20-VFQFN
Packaging: Tape & Reel (TR)
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| ADD5043-915-1-GEVK |
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Виробник: onsemi
Description: AX5043 915MHZ DVK-2 ADD-ON BOARD
Description: AX5043 915MHZ DVK-2 ADD-ON BOARD
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| FAN6248ADPGEVB |
Виробник: onsemi
Description: EVAL NCP1616 NCP13992 FAN6248
Outputs and Type: 1, Isolated
Main Purpose: AC/DC, Primary and Secondary Side
Supplied Contents: Board(s)
Utilized IC / Part: FAN6248
Board Type: Fully Populated
Regulator Topology: Resonant
Packaging: Bulk
Description: EVAL NCP1616 NCP13992 FAN6248
Outputs and Type: 1, Isolated
Main Purpose: AC/DC, Primary and Secondary Side
Supplied Contents: Board(s)
Utilized IC / Part: FAN6248
Board Type: Fully Populated
Regulator Topology: Resonant
Packaging: Bulk
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| FOD3125S |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 158.23 грн |
| 10+ | 109.94 грн |
| 100+ | 84.50 грн |
| 500+ | 68.76 грн |
| 1000+ | 65.32 грн |
| FUSB251UCX |
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Виробник: onsemi
Description: IC TYPE-C CC AND SBU PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 15µA
Protocol: USB
Supplier Device Package: 15-WLCSP (1.49x2.06)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC TYPE-C CC AND SBU PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 15µA
Protocol: USB
Supplier Device Package: 15-WLCSP (1.49x2.06)
Part Status: Active
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 4000 шт
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| LC05111C23MTTTG |
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Part Status: Obsolete
Fault Protection: Over Current
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Part Status: Obsolete
Fault Protection: Over Current
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
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| LV8549MCGEVB |
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Виробник: onsemi
Description: EVAL BRIDGE DR LV8549
Primary Attributes: Motors (Stepper)
Supplied Contents: Board(s)
Utilized IC / Part: LV8549MC
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
Description: EVAL BRIDGE DR LV8549
Primary Attributes: Motors (Stepper)
Supplied Contents: Board(s)
Utilized IC / Part: LV8549MC
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
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| LV8968BBGEVB |
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Виробник: onsemi
Description: EVAL MOTOR DR LV8968B
Part Status: Active
Platform: Arduino
Utilized IC / Part: LV8968BB
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Description: EVAL MOTOR DR LV8968B
Part Status: Active
Platform: Arduino
Utilized IC / Part: LV8968BB
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15725.94 грн |
| LV8968BBUWR2G |
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Виробник: onsemi
Description: IC 3PHASE BLDC/PMSM PREDR
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Voltage - Load: 7V ~ 12V
Supplier Device Package: 48-SQFP (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2
Grade: Automotive
Qualification: AEC-Q100
Description: IC 3PHASE BLDC/PMSM PREDR
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Voltage - Load: 7V ~ 12V
Supplier Device Package: 48-SQFP (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 363.39 грн |
| MICRORB-SMA-10020-GEVB |
Виробник: onsemi
Description: EVAL SENSOR PHOTODIODE 905NM
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: MicroRB-10020
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Interface: Analog
Packaging: Bulk
Description: EVAL SENSOR PHOTODIODE 905NM
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: MicroRB-10020
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Interface: Analog
Packaging: Bulk
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13370.65 грн |
| NCL2801LED1GEVB |
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Виробник: onsemi
Description: EVAL 200W PFC
Supplied Contents: Board(s)
Utilized IC / Part: NCL2801LED1
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
Description: EVAL 200W PFC
Supplied Contents: Board(s)
Utilized IC / Part: NCL2801LED1
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14983.04 грн |
| NCP13992AIOGEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCP431 NCP1616
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 95 ~ 265 VAC
Current - Output: 20A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP431, NCP1616, NCP4306, NCP13992
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side with PFC
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
Description: EVAL BOARD FOR NCP431 NCP1616
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 95 ~ 265 VAC
Current - Output: 20A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP431, NCP1616, NCP4306, NCP13992
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side with PFC
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
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| NCP161ASN180T1G |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 450MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.48V @ 450mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 1.8V 450MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.48V @ 450mA
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.83 грн |
| 6000+ | 12.02 грн |
| 9000+ | 11.85 грн |
| 15000+ | 10.94 грн |
| 21000+ | 10.84 грн |
| 30000+ | 10.74 грн |
| NCP163ASN280T1G |
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Виробник: onsemi
Description: IC REG LINEAR 2.8V 250MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.19V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit, Soft Start
Description: IC REG LINEAR 2.8V 250MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.19V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit, Soft Start
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.97 грн |
| 6000+ | 10.26 грн |
| 9000+ | 10.11 грн |
| 15000+ | 9.33 грн |
| 21000+ | 9.24 грн |
| 30000+ | 9.16 грн |
| NCP81239GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCP81239
Packaging: Bulk
Voltage - Output: 5V, 9V, 15V or 20V
Voltage - Input: 12V
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: NCP81239
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR NCP81239
Packaging: Bulk
Voltage - Output: 5V, 9V, 15V or 20V
Voltage - Input: 12V
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: NCP81239
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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| NCV57000DWR2G |
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Виробник: onsemi
Description: DGTL ISO 1.2KV 1CH GT DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 1200Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 24V
Qualification: AEC-Q100
Description: DGTL ISO 1.2KV 1CH GT DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 1200Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 24V
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NCV59749MNADJTBG |
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Виробник: onsemi
Description: IC REG LINEAR POS ADJ 3A 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFN (5x5)
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 0.28V @ 3A
Protection Features: Current Limit, Thermal Shutdown
Description: IC REG LINEAR POS ADJ 3A 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFN (5x5)
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 0.28V @ 3A
Protection Features: Current Limit, Thermal Shutdown
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV7547MWTXG |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 48QFNW
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (7)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Load Type: Capacitive and Resistive
Fault Protection: Over Load
Supplier Device Package: 48-QFNW (7x7)
Voltage - Load: 7V ~ 18V
Technology: NMOS
Applications: General Purpose
Description: IC HALF BRIDGE DRIVER 48QFNW
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (7)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Load Type: Capacitive and Resistive
Fault Protection: Over Load
Supplier Device Package: 48-QFNW (7x7)
Voltage - Load: 7V ~ 18V
Technology: NMOS
Applications: General Purpose
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 260.35 грн |
| NFAP1060L3TT |
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Виробник: onsemi
Description: IGBT IPM 600V 10A 29-PWRSSIP MOD
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: IGBT IPM 600V 10A 29-PWRSSIP MOD
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1122.66 грн |
| 10+ | 766.36 грн |
| NSVP264SDSF3T1G |
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Виробник: onsemi
Description: DIODE PIN 50V 100MW SC70/MCPH3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE PIN 50V 100MW SC70/MCPH3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.84 грн |
| 6000+ | 8.16 грн |
| 9000+ | 7.37 грн |
| 15000+ | 6.51 грн |
| 21000+ | 6.27 грн |
| 30000+ | 6.04 грн |
| NTHL033N65S3HF |
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Виробник: onsemi
Description: MOSFET N-CH 650V 70A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 6720 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 70A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 6720 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 4452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1056.20 грн |
| 30+ | 821.39 грн |
| NTP150N65S3HF |
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Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
на замовлення 654 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 412.20 грн |
| 50+ | 210.12 грн |
| 100+ | 192.07 грн |
| 500+ | 150.61 грн |
| NTPF150N65S3HF |
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Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
на замовлення 754 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 396.37 грн |
| 10+ | 255.07 грн |
| 100+ | 183.57 грн |
| 500+ | 143.68 грн |
| NVMFS5C406NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 280µA
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 53A/362A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 280µA
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVTFS015N04CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 9.4A/27A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 9.4A/27A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| STK544UC63K-E |
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Виробник: onsemi
Description: INTELLIGENT POWER MODULE 600V 10
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: INTELLIGENT POWER MODULE 600V 10
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1611.60 грн |
| NCP161ASN280T1G |
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Виробник: onsemi
Description: IC REG LINEAR 2.8V 450MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.345V @ 450mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 2.8V 450MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.345V @ 450mA
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.35 грн |
| 6000+ | 15.33 грн |
| 9000+ | 15.13 грн |
| 15000+ | 13.98 грн |
| 21000+ | 13.85 грн |
| 30000+ | 13.73 грн |
































