| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NTMYS014N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 12A/36A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMYS025N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMYS7D3N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 17A/52A 4LFPAKInput Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMYS8D0N04CTWG | onsemi |
Description: MOSFET N-CH 40V 16A/49A 4LFPAKInput Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3.5V @ 30µA Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NCP171AMX180175TCG | onsemi |
Description: IC REG LINEAR 1.8V 80MA 4-XDFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: 4-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.11V @ 80mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP171AMX280275TCG | onsemi |
Description: IC REG LINEAR 2.8V 80MA 4XDFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: 4-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.075V @ 80mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NFAM3065L4BT | onsemi |
Description: IPM 650V 30APackaging: Tube Package / Case: 39-PowerDIP Module (1.413", 35.90mm), 30 Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Current: 30 A Voltage: 650 V |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
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FSB50250BS | onsemi |
Description: IPM 500V 2AVoltage: 500 V Current: 1.9 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: MOSFET Mounting Type: Surface Mount Package / Case: 23-PowerSMD Module, Gull Wing Packaging: Tape & Reel (TR) |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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EGP30J | onsemi |
Description: DIODE GEN PURP 600V 3A DO201ADCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 75pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) |
на замовлення 1069 шт: термін постачання 21-31 дні (днів) |
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EGP30J | onsemi |
Description: DIODE GEN PURP 600V 3A DO201ADTechnology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 75pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||
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FGY75T95SQDT | onsemi |
Description: IGBT TRENCH FS 950V 150A TO-247Power - Max: 434 W Current - Collector Pulsed (Icm): 300 A Voltage - Collector Emitter Breakdown (Max): 950 V Current - Collector (Ic) (Max): 150 A Gate Charge: 137 nC Test Condition: 600V, 75A, 4.7Ohm, 15V Switching Energy: 8.8mJ (on), 3.2mJ (off) Td (on/off) @ 25°C: 28.8ns/117ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A Reverse Recovery Time (trr): 259 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV51705MNTWG | onsemi |
Description: IC GATE DRVR LOW-SIDE 24QFNQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 6A, 6A Logic Voltage - VIL, VIH: 1.2V, 1.6V Gate Type: SiC MOSFET Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 8ns, 8ns Supplier Device Package: 24-QFNW (4x4) Input Type: Inverting, Non-Inverting Voltage - Supply: 10V ~ 22V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 24-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCV7357MW3R2G | onsemi |
Description: IC TRANSCEIVER FULL 2/1 8DFNWQualification: AEC-Q100 Grade: Automotive Duplex: Full Supplier Device Package: 8-DFNW (3x3) Protocol: CANbus Data Rate: 1Mbps Number of Drivers/Receivers: 2/1 Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV8187AMN120TAG | onsemi |
Description: IC REG LINEAR 1.2V 1.2A 6DFNVoltage - Output (Min/Fixed): 1.2V Supplier Device Package: 6-DFN (3x3) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 1.2A Mounting Type: Surface Mount, Wettable Flank Output Type: Fixed Package / Case: 6-VDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.495V @ 1.2A PSRR: 75dB (1kHz) Grade: Automotive Control Features: Enable, Power Good |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV8187AMT120TAG | onsemi |
Description: IC REG LINEAR 1.2V 1.2A 6WDFNGrade: Automotive Control Features: Enable, Power Good Voltage - Output (Min/Fixed): 1.2V Supplier Device Package: 6-WDFN (2x2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 1.2A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.495V @ 1.2A PSRR: 75dB (1kHz) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NIS5021MT2TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFNPart Status: Obsolete Supplier Device Package: 10-WDFN (4x4) Operating Temperature: -40°C ~ 150°C Current - Output: 12A Voltage - Input: 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTTFS010N10MCLTAG | onsemi |
Description: MOSFET N-CH 100V 10.7A/50A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 85µA Power Dissipation (Max): 2.3W (Ta),52W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NVB150N65S3F | onsemi |
Description: MOSFET N-CH 650V 24A D2PAK-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVMFD6H852NLT1G | onsemi |
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DLInput Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 26µA Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Configuration: 2 N-Channel (Dual) Power - Max: 3.2W (Ta), 38W (Tc) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFD6H852NLWFT1G | onsemi |
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DLInput Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 26µA Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Configuration: 2 N-Channel (Dual) Power - Max: 3.2W (Ta), 38W (Tc) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMJS1D5N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 38A/200A 8LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2V @ 130µA Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NVMJS2D5N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 31A/164A 8LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2V @ 135µA Power Dissipation (Max): 3.9W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMYS011N04CTWG | onsemi |
Description: MOSFET N-CH 40V 13A/35A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMYS014N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 12A/36A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMYS021N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMYS025N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMYS3D3N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 26A/133A 4LFPAKMounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) FET Type: N-Channel Packaging: Tape & Reel (TR) Grade: Automotive Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMYS5D3N04CTWG | onsemi |
Description: MOSFET N-CH 40V 19A/71A 4LFPAKPower Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3.5V @ 40µA Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMYS7D3N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 17A/52A 4LFPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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NVTFS010N10MCLTAG | onsemi |
Description: MOSFET N-CH 100V 11.7A/57.8 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FUSB308BVMPX | onsemi |
Description: USB TYPEC CONTROLLERPackaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 16-WQFN (3x3) Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FUSB308BVMPX | onsemi |
Description: USB TYPEC CONTROLLERPackaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 16-WQFN (3x3) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2392 шт: термін постачання 21-31 дні (днів) |
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FCMT360N65S3 | onsemi |
Description: MOSFET N-CH 650V 10A 4PQFNPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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FSB50250BS | onsemi |
Description: IPM 500V 2AVoltage: 500 V Current: 1.9 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: MOSFET Mounting Type: Surface Mount Package / Case: 23-PowerSMD Module, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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NCP1095DBR2 | onsemi |
Description: IC POE CNTRL 1 CHANNEL 16TSSOPAuxiliary Sense: Yes Supplier Device Package: 16-TSSOP Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt Internal Switch(s): Yes Current - Supply: 336.7µA Voltage - Supply: 0V ~ 57V Operating Temperature: -40°C ~ 125°C (TJ) Type: Controller (PD) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Power - Max: 90 W Number of Channels: 1 |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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NCP1096PAR2G | onsemi |
Description: IC POE CNTRL 1 CHANNEL 16TSSOPPower - Max: 90 W Number of Channels: 1 Auxiliary Sense: Yes Supplier Device Package: 16-TSSOP-EP Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt Internal Switch(s): Yes Current - Supply: 336.7µA Voltage - Supply: 0V ~ 57V Operating Temperature: -40°C ~ 125°C (TJ) Type: Controller (PD), DC/DC Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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NCP171AMX180175TCG | onsemi |
Description: IC REG LINEAR 1.8V 80MA 4-XDFNProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.11V @ 80mA PSRR: 65dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 4-XDFN (1.2x1.2) Number of Regulators: 2 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 95 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 80mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1825 шт: термін постачання 21-31 дні (днів) |
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NCV8406BDTRKG | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAKFault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: DPAK Ratio - Input:Output: 1:1 Current - Output (Max): 7A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 60V (Max) Rds On (Typ): 185mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Features: Auto Restart Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Input Type: Non-Inverting |
на замовлення 3444 шт: термін постачання 21-31 дні (днів) |
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NTMYS014N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 12A/36A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
на замовлення 5580 шт: термін постачання 21-31 дні (днів) |
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NTMYS025N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMYS7D3N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 17A/52A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
на замовлення 1261 шт: термін постачання 21-31 дні (днів) |
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NTMYS8D0N04CTWG | onsemi |
Description: MOSFET N-CH 40V 16A/49A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| LC898150XH-MH | onsemi |
Description: IC MOTOR DVR OIS AF 21WLCSP Packaging: Tape & Reel (TR) Package / Case: 21-XFBGA, WLCSP Mounting Type: Surface Mount Function: Driver Current - Output: 130mA Interface: PWM, SPI Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.6V ~ 3.3V Applications: General Purpose Voltage - Load: 1.7V ~ 3.3V Supplier Device Package: 21-WLCSP (1.17x2.77) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
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MC74VHC1G14EDFT2G | onsemi |
Description: IC INVERT SCHMITT 1CH 1INP SC88A Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 1.5V ~ 2.9V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MJD122RLG | onsemi |
Description: TRANS NPN DARL 100V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJD127RLG | onsemi |
Description: TRANS PNP DARL 100V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJD2955RLG | onsemi |
Description: TRANS PNP 60V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP4371AADDR2G | onsemi |
Description: IC BATT CHG 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 8-SOIC Fault Protection: Short Circuit Voltage - Supply (Max): 28V Battery Pack Voltage: 12V Current - Charging: Constant |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP4371BBCDDR2G | onsemi |
Description: IC BATT CHG 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 8-SOIC Fault Protection: Short Circuit Voltage - Supply (Max): 28V Battery Pack Voltage: 20V Current - Charging: Constant |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NL27WZ16DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5VPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-74 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NRVBS260T3G-RG01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBSS26T3G-RG01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVUS2BA | onsemi |
Description: DIODE GEN PURP 100V 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSS60200DMTTBG | onsemi |
Description: TRANS PNP 60V 2A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRA8160T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 60V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZESD5Z3.3T5G | onsemi |
Description: TVS DIODE 3.3VWM 14.1VC SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 14.1V Power - Peak Pulse: 158W Power Line Protection: No Grade: Automotive Part Status: Obsolete Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
| AR0230CSSC12SUEA0-DP | onsemi |
Description: IMAGE SENSOR CMOS IBGA80 |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | |||||||||||||||
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AR0237CSSC12SHRA0-DP | onsemi |
Description: IMAGE SENSOR 2MP CMOS 48PLCC Packaging: Tray Package / Case: 48-PLCC Type: CMOS Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HCPL2611SM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMDPackaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJD122-1G | onsemi |
Description: TRANS NPN DARL 100V 8A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. |
| NTMYS014N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 34.28 грн |
| NTMYS025N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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Мінімальне замовлення: 3000 шт
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| NTMYS7D3N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| NTMYS8D0N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 52.95 грн |
| 6000+ | 43.73 грн |
| NCP171AMX180175TCG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.11V @ 80mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.11V @ 80mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
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| NCP171AMX280275TCG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.8V 80MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.075V @ 80mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 80MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.075V @ 80mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NFAM3065L4BT |
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Виробник: onsemi
Description: IPM 650V 30A
Packaging: Tube
Package / Case: 39-PowerDIP Module (1.413", 35.90mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 650 V
Description: IPM 650V 30A
Packaging: Tube
Package / Case: 39-PowerDIP Module (1.413", 35.90mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 650 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1752.80 грн |
| 90+ | 1312.11 грн |
| 540+ | 1119.67 грн |
| FSB50250BS |
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Виробник: onsemi
Description: IPM 500V 2A
Voltage: 500 V
Current: 1.9 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module, Gull Wing
Packaging: Tape & Reel (TR)
Description: IPM 500V 2A
Voltage: 500 V
Current: 1.9 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 450+ | 319.86 грн |
| EGP30J |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.76 грн |
| 10+ | 48.77 грн |
| 100+ | 33.79 грн |
| 500+ | 26.49 грн |
| EGP30J |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 600V 3A DO201AD
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1250 шт
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| FGY75T95SQDT |
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Виробник: onsemi
Description: IGBT TRENCH FS 950V 150A TO-247
Power - Max: 434 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector (Ic) (Max): 150 A
Gate Charge: 137 nC
Test Condition: 600V, 75A, 4.7Ohm, 15V
Switching Energy: 8.8mJ (on), 3.2mJ (off)
Td (on/off) @ 25°C: 28.8ns/117ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A
Reverse Recovery Time (trr): 259 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 950V 150A TO-247
Power - Max: 434 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector (Ic) (Max): 150 A
Gate Charge: 137 nC
Test Condition: 600V, 75A, 4.7Ohm, 15V
Switching Energy: 8.8mJ (on), 3.2mJ (off)
Td (on/off) @ 25°C: 28.8ns/117ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A
Reverse Recovery Time (trr): 259 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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од. на суму грн.
| NCV51705MNTWG |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 6A, 6A
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Gate Type: SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 8ns
Supplier Device Package: 24-QFNW (4x4)
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 24QFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 6A, 6A
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Gate Type: SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 8ns
Supplier Device Package: 24-QFNW (4x4)
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 142.34 грн |
| NCV7357MW3R2G |
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Виробник: onsemi
Description: IC TRANSCEIVER FULL 2/1 8DFNW
Qualification: AEC-Q100
Grade: Automotive
Duplex: Full
Supplier Device Package: 8-DFNW (3x3)
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 2/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER FULL 2/1 8DFNW
Qualification: AEC-Q100
Grade: Automotive
Duplex: Full
Supplier Device Package: 8-DFNW (3x3)
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 2/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV8187AMN120TAG |
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Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6DFN
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
Grade: Automotive
Control Features: Enable, Power Good
Description: IC REG LINEAR 1.2V 1.2A 6DFN
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
Grade: Automotive
Control Features: Enable, Power Good
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NCV8187AMT120TAG |
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Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.79 грн |
| NIS5021MT2TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Part Status: Obsolete
Supplier Device Package: 10-WDFN (4x4)
Operating Temperature: -40°C ~ 150°C
Current - Output: 12A
Voltage - Input: 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC ELECTRONIC FUSE 10WDFN
Part Status: Obsolete
Supplier Device Package: 10-WDFN (4x4)
Operating Temperature: -40°C ~ 150°C
Current - Output: 12A
Voltage - Input: 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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| NTTFS010N10MCLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 85µA
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 85µA
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 44.81 грн |
| 3000+ | 42.45 грн |
| 4500+ | 42.31 грн |
| NVB150N65S3F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 133.14 грн |
| NVMFD6H852NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
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Мінімальне замовлення: 1500 шт
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| NVMFD6H852NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
товару немає в наявності
Мінімальне замовлення: 1500 шт
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од. на суму грн.
| NVMJS1D5N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 47.21 грн |
| 6000+ | 44.66 грн |
| NVMJS2D5N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NVMYS011N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NVMYS014N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NVMYS021N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NVMYS025N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NVMYS3D3N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 47.96 грн |
| NVMYS5D3N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 29.83 грн |
| 6000+ | 26.92 грн |
| NVMYS7D3N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.65 грн |
| 6000+ | 25.33 грн |
| 9000+ | 25.10 грн |
| NVTFS010N10MCLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 39.79 грн |
| 3000+ | 37.15 грн |
| FUSB308BVMPX |
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Виробник: onsemi
Description: USB TYPEC CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPEC CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| FUSB308BVMPX |
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Виробник: onsemi
Description: USB TYPEC CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPEC CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2392 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.95 грн |
| 10+ | 99.47 грн |
| 25+ | 90.66 грн |
| 100+ | 76.04 грн |
| 250+ | 71.72 грн |
| 500+ | 69.12 грн |
| 1000+ | 65.88 грн |
| FCMT360N65S3 |
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Виробник: onsemi
Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 348.70 грн |
| 10+ | 222.25 грн |
| 100+ | 157.98 грн |
| 500+ | 130.06 грн |
| FSB50250BS |
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Виробник: onsemi
Description: IPM 500V 2A
Voltage: 500 V
Current: 1.9 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module, Gull Wing
Packaging: Cut Tape (CT)
Description: IPM 500V 2A
Voltage: 500 V
Current: 1.9 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 507.21 грн |
| 10+ | 418.88 грн |
| 100+ | 349.08 грн |
| NCP1095DBR2 |
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Виробник: onsemi
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Auxiliary Sense: Yes
Supplier Device Package: 16-TSSOP
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Internal Switch(s): Yes
Current - Supply: 336.7µA
Voltage - Supply: 0V ~ 57V
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Controller (PD)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Power - Max: 90 W
Number of Channels: 1
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Auxiliary Sense: Yes
Supplier Device Package: 16-TSSOP
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Internal Switch(s): Yes
Current - Supply: 336.7µA
Voltage - Supply: 0V ~ 57V
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Controller (PD)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Power - Max: 90 W
Number of Channels: 1
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.84 грн |
| 10+ | 84.73 грн |
| 25+ | 77.11 грн |
| 100+ | 64.45 грн |
| 250+ | 60.68 грн |
| 500+ | 58.41 грн |
| 1000+ | 55.62 грн |
| NCP1096PAR2G |
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Виробник: onsemi
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Power - Max: 90 W
Number of Channels: 1
Auxiliary Sense: Yes
Supplier Device Package: 16-TSSOP-EP
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Internal Switch(s): Yes
Current - Supply: 336.7µA
Voltage - Supply: 0V ~ 57V
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Controller (PD), DC/DC
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Power - Max: 90 W
Number of Channels: 1
Auxiliary Sense: Yes
Supplier Device Package: 16-TSSOP-EP
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Internal Switch(s): Yes
Current - Supply: 336.7µA
Voltage - Supply: 0V ~ 57V
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Controller (PD), DC/DC
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.60 грн |
| 10+ | 115.55 грн |
| 25+ | 105.55 грн |
| 100+ | 88.71 грн |
| 250+ | 83.78 грн |
| 500+ | 80.81 грн |
| 1000+ | 77.08 грн |
| NCP171AMX180175TCG |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.11V @ 80mA
PSRR: 65dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.11V @ 80mA
PSRR: 65dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 95 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.40 грн |
| 10+ | 43.63 грн |
| 25+ | 39.40 грн |
| 100+ | 32.54 грн |
| 250+ | 30.42 грн |
| 500+ | 29.15 грн |
| 1000+ | 27.64 грн |
| NCV8406BDTRKG |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: DPAK
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V (Max)
Rds On (Typ): 185mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Input Type: Non-Inverting
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: DPAK
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V (Max)
Rds On (Typ): 185mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Input Type: Non-Inverting
на замовлення 3444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.98 грн |
| 10+ | 115.63 грн |
| 25+ | 97.80 грн |
| 100+ | 72.91 грн |
| 250+ | 63.63 грн |
| 500+ | 57.93 грн |
| 1000+ | 52.28 грн |
| NTMYS014N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 5580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.53 грн |
| 10+ | 82.20 грн |
| 100+ | 55.26 грн |
| 500+ | 41.04 грн |
| 1000+ | 37.56 грн |
| NTMYS025N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товару немає в наявності
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| NTMYS7D3N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
на замовлення 1261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.50 грн |
| 10+ | 97.68 грн |
| 100+ | 66.35 грн |
| 500+ | 49.67 грн |
| 1000+ | 45.62 грн |
| NTMYS8D0N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.73 грн |
| 10+ | 97.16 грн |
| 100+ | 65.95 грн |
| 500+ | 49.36 грн |
| 1000+ | 45.33 грн |
| LC898150XH-MH |
Виробник: onsemi
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
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Мінімальне замовлення: 4000 шт
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| MC74VHC1G14EDFT2G |
Виробник: onsemi
Description: IC INVERT SCHMITT 1CH 1INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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Мінімальне замовлення: 3000 шт
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| MJD122RLG |
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Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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| MJD127RLG |
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Виробник: onsemi
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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| MJD2955RLG |
Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
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| NCP4371AADDR2G |
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Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
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| NCP4371BBCDDR2G |
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Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
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| NL27WZ16DBVT1G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
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| NRVBS260T3G-RG01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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| NRVBSS26T3G-RG01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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| NRVUS2BA |
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Виробник: onsemi
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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| NSS60200DMTTBG |
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Виробник: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
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| SBRA8160T3G-VF01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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| SZESD5Z3.3T5G |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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Мінімальне замовлення: 8000 шт
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| AR0230CSSC12SUEA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR CMOS IBGA80
Description: IMAGE SENSOR CMOS IBGA80
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Мінімальне замовлення: 2400 шт
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| AR0237CSSC12SHRA0-DP |
Виробник: onsemi
Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
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| HCPL2611SM |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
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| MJD122-1G |
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Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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