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FGH25N120FTDS FGH25N120FTDS onsemi fgh25n120ftds-d.pdf Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
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FSFR1700XSL FSFR1700XSL onsemi fsfr2100xs-d.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
2+247.63 грн
19+169.13 грн
38+159.55 грн
114+138.63 грн
266+132.11 грн
Мінімальне замовлення: 2 шт
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FDP8870 FDP8870 onsemi FAIRS26360-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 156A TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
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MBRF2060CTG MBRF2060CTG onsemi mbrf2060ct-d.pdf Description: DIODE ARR SCHOTT 60V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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NCV7812ABTG NCV7812ABTG onsemi mc7800-d.pdf Description: IC REG LINEAR 12V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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FSFR1700XS FSFR1700XS onsemi fsfr2100xs-d.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
2+297.48 грн
10+217.05 грн
25+199.79 грн
100+169.71 грн
Мінімальне замовлення: 2 шт
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NCP1015AP100G NCP1015AP100G onsemi ncp1015-d.pdf description Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 19 W
Part Status: Obsolete
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: 7-PDIP
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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NTST40H120ECTG NTST40H120ECTG onsemi ntst40h120ect-d.pdf Description: DIODE ARR SCHOTT 120V 20A TO-220
Current - Reverse Leakage @ Vr: 3 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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NCP1129BP100G NCP1129BP100G onsemi ncp1126-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 43 W
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 7-PDIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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FCA36N60NF FCA36N60NF onsemi fca36n60nf-d.pdf Description: MOSFET N-CH 600V 34.9A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FDP12N50NZ FDP12N50NZ onsemi fdpf12n50nz-d.pdf Description: MOSFET N-CH 500V 11.5A TO220-3
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
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LM2575T-15G LM2575T-15G onsemi lm2575-d.pdf Description: IC REG BUCK 15V 1A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
2+168.52 грн
10+120.98 грн
50+104.27 грн
Мінімальне замовлення: 2 шт
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STK554U392A-E STK554U392A-E onsemi stk554u392a-e-d.pdf Description: IC HALF BRIDGE DRIVER 15A 29SIP
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 30A
Current - Output / Channel: 15A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
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FQA90N08 FQA90N08 onsemi fqa90n08-d.pdf Description: MOSFET N-CH 80V 90A TO3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
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FOD2741BSV FOD2741BSV onsemi fod2741b-d.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Number of Channels: 1
Part Status: Active
Voltage - Output (Max): 30V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+146.37 грн
10+91.04 грн
100+65.28 грн
500+51.75 грн
1000+48.83 грн
Мінімальне замовлення: 3 шт
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MC78M15ACDTG MC78M15ACDTG onsemi mc78m00-d.pdf Description: IC REG LINEAR 15V 500MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Protection Features: Over Temperature, Short Circuit
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FDA20N50F FDA20N50F onsemi fda20n50f-d.pdf Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 388W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
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NOIP1SE2000A-QDI NOIP1SE2000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR 2MP 84LCC
Active Pixel Array: 1984H x 1264V
Pixel Size: 4.8µm x 4.8µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 84-LCC
Packaging: Tray
Frames per Second: 230.0
Part Status: Obsolete
Supplier Device Package: 84-LCC (19x19)
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FOD2742B FOD2742B onsemi fod2742b-d.pdf description Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Part Status: Active
Number of Channels: 1
на замовлення 7813 шт:
термін постачання 21-31 дні (днів)
4+99.69 грн
10+67.73 грн
100+50.93 грн
500+40.82 грн
1000+38.53 грн
3000+35.61 грн
6000+33.56 грн
Мінімальне замовлення: 4 шт
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KSE13003H1ASTU KSE13003H1ASTU onsemi kse13003-d.pdf Description: TRANS NPN 400V 1.5A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
на замовлення 1742 шт:
термін постачання 21-31 дні (днів)
5+78.33 грн
60+33.81 грн
120+30.03 грн
540+22.27 грн
1020+20.36 грн
Мінімальне замовлення: 5 шт
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FODM3053V-NF098 FODM3053V-NF098 onsemi fodm3053_nf098-d.pdf Description: OPTOISOLATOR 3.75KV TRIAC 4MFP
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR, VDE
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+132.92 грн
10+81.06 грн
100+59.97 грн
500+51.72 грн
1000+42.59 грн
2000+40.47 грн
Мінімальне замовлення: 3 шт
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FQPF2N80 FQPF2N80 onsemi fqpf2n80-d.pdf Description: MOSFET N-CH 800V 1.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
2+166.14 грн
10+103.16 грн
100+70.54 грн
Мінімальне замовлення: 2 шт
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MM74HCT14MTC MM74HCT14MTC onsemi mm74hct14-d.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
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FCHD040N65S3-F155 FCHD040N65S3-F155 onsemi fchd040n65s3-d.pdf Description: MOSFET N-CH 650V 65A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+922.50 грн
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FCMT360N65S3 FCMT360N65S3 onsemi fcmt360n65s3-d.pdf Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
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NTH4L027N65S3F NTH4L027N65S3F onsemi nth4l027n65s3f-d.pdf Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
1+1597.36 грн
10+1112.85 грн
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NTH4L040N65S3F NTH4L040N65S3F onsemi nth4l040n65s3f-d.pdf Description: MOSFET N-CH 650V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
1+1225.51 грн
30+735.04 грн
120+648.15 грн
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NTHL027N65S3HF NTHL027N65S3HF onsemi nthl027n65s3hf-d.pdf Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 400 V
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
1+1517.45 грн
30+927.95 грн
120+853.30 грн
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NTHL040N65S3HF NTHL040N65S3HF onsemi nthl040n65s3hf-d.pdf Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5945 pF @ 400 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1216.81 грн
10+833.55 грн
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NTHLD040N65S3HF NTHLD040N65S3HF onsemi nthld040n65s3hf-d.pdf Description: MOSFET N-CH 650V 65A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5945 pF @ 400 V
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NTP095N65S3HF NTP095N65S3HF onsemi ntp095n65s3hf-d.pdf Description: MOSFET N-CH 650V 36A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
на замовлення 476 шт:
термін постачання 21-31 дні (днів)
1+528.50 грн
50+275.81 грн
100+253.35 грн
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NTMYS014N06CLTWG NTMYS014N06CLTWG onsemi ntmys014n06cl-d.pdf Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+34.01 грн
Мінімальне замовлення: 3000 шт
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NTMYS025N06CLTWG NTMYS025N06CLTWG onsemi ntmys025n06cl-d.pdf Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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NTMYS2D4N04CTWG NTMYS2D4N04CTWG onsemi ntmys2d4n04c-d.pdf Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
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NTMYS7D3N04CLTWG NTMYS7D3N04CLTWG onsemi ntmys7d3n04cl-d.pdf Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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NTMYS8D0N04CTWG NTMYS8D0N04CTWG onsemi ntmys8d0n04c-d.pdf Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+54.18 грн
6000+44.74 грн
Мінімальне замовлення: 3000 шт
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NCP171AMX180175TCG NCP171AMX180175TCG onsemi ncp171-d.pdf Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.11V @ 80mA
Protection Features: Over Current, Over Temperature
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NCP171AMX280275TCG NCP171AMX280275TCG onsemi ncp171-d.pdf Description: IC REG LINEAR 2.8V 80MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.075V @ 80mA
Protection Features: Over Current, Over Temperature
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NFAM3065L4BT NFAM3065L4BT onsemi nfam3065l4bt-d.pdf Description: IPM 650V 30A
Packaging: Tube
Package / Case: 39-PowerDIP Module (1.413", 35.90mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 650 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
1+1793.57 грн
90+1342.63 грн
540+1145.71 грн
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FSB50250BS FSB50250BS onsemi fsb50250b-d.pdf Description: IPM 500V 2A
Voltage: 500 V
Current: 1.9 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
450+327.30 грн
Мінімальне замовлення: 450 шт
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EGP30J EGP30J onsemi egp30k-d.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)
6+60.13 грн
10+49.90 грн
100+34.57 грн
500+27.11 грн
Мінімальне замовлення: 6 шт
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EGP30J EGP30J onsemi egp30k-d.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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FGY75T95SQDT FGY75T95SQDT onsemi fgy75t95sqdt-d.pdf Description: IGBT TRENCH FS 950V 150A TO-247
Power - Max: 434 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector (Ic) (Max): 150 A
Gate Charge: 137 nC
Test Condition: 600V, 75A, 4.7Ohm, 15V
Switching Energy: 8.8mJ (on), 3.2mJ (off)
Td (on/off) @ 25°C: 28.8ns/117ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A
Reverse Recovery Time (trr): 259 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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NCV51705MNTWG NCV51705MNTWG onsemi ncv51705-d.pdf Description: IC GATE DRVR LOW-SIDE 24QFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 6A, 6A
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Gate Type: SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 8ns
Supplier Device Package: 24-QFNW (4x4)
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+145.65 грн
Мінімальне замовлення: 3000 шт
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NCV7357MW3R2G NCV7357MW3R2G onsemi ncv7357-d.pdf Description: IC TRANSCEIVER FULL 2/1 8DFNW
Qualification: AEC-Q100
Grade: Automotive
Duplex: Full
Supplier Device Package: 8-DFNW (3x3)
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 2/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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NCV8187AMN120TAG NCV8187AMN120TAG onsemi ncv8187-d.pdf Description: IC REG LINEAR 1.2V 1.2A 6DFN
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
Grade: Automotive
Control Features: Enable, Power Good
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NCV8187AMT120TAG NCV8187AMT120TAG onsemi ncv8187-d.pdf Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.23 грн
Мінімальне замовлення: 3000 шт
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NIS5021MT2TXG onsemi NIS5020-21_NIS5820_Rev3_Jul2019.pdf Description: IC ELECTRONIC FUSE 10WDFN
Part Status: Obsolete
Supplier Device Package: 10-WDFN (4x4)
Operating Temperature: -40°C ~ 150°C
Current - Output: 12A
Voltage - Input: 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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NTTFS010N10MCLTAG NTTFS010N10MCLTAG onsemi nttfs010n10mcl-d.pdf Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 85µA
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
1500+45.85 грн
3000+43.43 грн
4500+43.29 грн
Мінімальне замовлення: 1500 шт
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NVB150N65S3F NVB150N65S3F onsemi nvb150n65s3f-d.pdf Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 97600 шт:
термін постачання 21-31 дні (днів)
800+132.11 грн
1600+125.71 грн
Мінімальне замовлення: 800 шт
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NVMFD6H852NLT1G NVMFD6H852NLT1G onsemi nvmfd6h852nl-d.pdf Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
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NVMFD6H852NLWFT1G NVMFD6H852NLWFT1G onsemi nvmfd6h852nl-d.pdf Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
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NVMJS1D5N04CLTWG NVMJS1D5N04CLTWG onsemi nvmjs1d5n04cl-d.pdf Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+48.31 грн
6000+45.70 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVMJS2D5N06CLTWG NVMJS2D5N06CLTWG onsemi nvmjs2d5n06cl-d.pdf Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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NVMYS011N04CTWG NVMYS011N04CTWG onsemi nvmys011n04c-d.pdf Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMYS014N06CLTWG NVMYS014N06CLTWG onsemi nvmys014n06cl-d.pdf Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMYS021N06CLTWG NVMYS021N06CLTWG onsemi nvmys021n06cl-d.pdf Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
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NVMYS025N06CLTWG NVMYS025N06CLTWG onsemi nvmys025n06cl-d.pdf Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMYS3D3N06CLTWG NVMYS3D3N06CLTWG onsemi nvmys3d3n06cl-d.pdf Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+49.08 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVMYS5D3N04CTWG NVMYS5D3N04CTWG onsemi nvmys5d3n04c-d.pdf Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+30.52 грн
6000+27.55 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FGH25N120FTDS fgh25n120ftds-d.pdf
FGH25N120FTDS
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
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FSFR1700XSL fsfr2100xs-d.pdf
FSFR1700XSL
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+247.63 грн
19+169.13 грн
38+159.55 грн
114+138.63 грн
266+132.11 грн
Мінімальне замовлення: 2 шт
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FDP8870 FAIRS26360-1.pdf?t.download=true&u=5oefqw
FDP8870
Виробник: onsemi
Description: MOSFET N-CH 30V 156A TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
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MBRF2060CTG mbrf2060ct-d.pdf
MBRF2060CTG
Виробник: onsemi
Description: DIODE ARR SCHOTT 60V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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NCV7812ABTG mc7800-d.pdf
NCV7812ABTG
Виробник: onsemi
Description: IC REG LINEAR 12V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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FSFR1700XS fsfr2100xs-d.pdf
FSFR1700XS
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+297.48 грн
10+217.05 грн
25+199.79 грн
100+169.71 грн
Мінімальне замовлення: 2 шт
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NCP1015AP100G description ncp1015-d.pdf
NCP1015AP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 19 W
Part Status: Obsolete
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: 7-PDIP
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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NTST40H120ECTG ntst40h120ect-d.pdf
NTST40H120ECTG
Виробник: onsemi
Description: DIODE ARR SCHOTT 120V 20A TO-220
Current - Reverse Leakage @ Vr: 3 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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NCP1129BP100G ncp1126-d.pdf
NCP1129BP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 43 W
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 7-PDIP
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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FCA36N60NF fca36n60nf-d.pdf
FCA36N60NF
Виробник: onsemi
Description: MOSFET N-CH 600V 34.9A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FDP12N50NZ fdpf12n50nz-d.pdf
FDP12N50NZ
Виробник: onsemi
Description: MOSFET N-CH 500V 11.5A TO220-3
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
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LM2575T-15G lm2575-d.pdf
LM2575T-15G
Виробник: onsemi
Description: IC REG BUCK 15V 1A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.52 грн
10+120.98 грн
50+104.27 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
STK554U392A-E stk554u392a-e-d.pdf
STK554U392A-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 15A 29SIP
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 30A
Current - Output / Channel: 15A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
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FQA90N08 fqa90n08-d.pdf
FQA90N08
Виробник: onsemi
Description: MOSFET N-CH 80V 90A TO3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
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FOD2741BSV fod2741b-d.pdf
FOD2741BSV
Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Number of Channels: 1
Part Status: Active
Voltage - Output (Max): 30V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.37 грн
10+91.04 грн
100+65.28 грн
500+51.75 грн
1000+48.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MC78M15ACDTG mc78m00-d.pdf
MC78M15ACDTG
Виробник: onsemi
Description: IC REG LINEAR 15V 500MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Protection Features: Over Temperature, Short Circuit
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FDA20N50F fda20n50f-d.pdf
FDA20N50F
Виробник: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 388W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
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NOIP1SE2000A-QDI noip1sn5000a-d.pdf
NOIP1SE2000A-QDI
Виробник: onsemi
Description: IC IMAGE SENSOR 2MP 84LCC
Active Pixel Array: 1984H x 1264V
Pixel Size: 4.8µm x 4.8µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 84-LCC
Packaging: Tray
Frames per Second: 230.0
Part Status: Obsolete
Supplier Device Package: 84-LCC (19x19)
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FOD2742B description fod2742b-d.pdf
FOD2742B
Виробник: onsemi
Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Part Status: Active
Number of Channels: 1
на замовлення 7813 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.69 грн
10+67.73 грн
100+50.93 грн
500+40.82 грн
1000+38.53 грн
3000+35.61 грн
6000+33.56 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
KSE13003H1ASTU kse13003-d.pdf
KSE13003H1ASTU
Виробник: onsemi
Description: TRANS NPN 400V 1.5A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
на замовлення 1742 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.33 грн
60+33.81 грн
120+30.03 грн
540+22.27 грн
1020+20.36 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
FODM3053V-NF098 fodm3053_nf098-d.pdf
FODM3053V-NF098
Виробник: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4MFP
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR, VDE
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.92 грн
10+81.06 грн
100+59.97 грн
500+51.72 грн
1000+42.59 грн
2000+40.47 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FQPF2N80 fqpf2n80-d.pdf
FQPF2N80
Виробник: onsemi
Description: MOSFET N-CH 800V 1.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.14 грн
10+103.16 грн
100+70.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MM74HCT14MTC mm74hct14-d.pdf
MM74HCT14MTC
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
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FCHD040N65S3-F155 fchd040n65s3-d.pdf
FCHD040N65S3-F155
Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+922.50 грн
В кошику  од. на суму  грн.
FCMT360N65S3 fcmt360n65s3-d.pdf
FCMT360N65S3
Виробник: onsemi
Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
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NTH4L027N65S3F nth4l027n65s3f-d.pdf
NTH4L027N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1597.36 грн
10+1112.85 грн
В кошику  од. на суму  грн.
NTH4L040N65S3F nth4l040n65s3f-d.pdf
NTH4L040N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1225.51 грн
30+735.04 грн
120+648.15 грн
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NTHL027N65S3HF nthl027n65s3hf-d.pdf
NTHL027N65S3HF
Виробник: onsemi
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 400 V
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1517.45 грн
30+927.95 грн
120+853.30 грн
В кошику  од. на суму  грн.
NTHL040N65S3HF nthl040n65s3hf-d.pdf
NTHL040N65S3HF
Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5945 pF @ 400 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1216.81 грн
10+833.55 грн
В кошику  од. на суму  грн.
NTHLD040N65S3HF nthld040n65s3hf-d.pdf
NTHLD040N65S3HF
Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5945 pF @ 400 V
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NTP095N65S3HF ntp095n65s3hf-d.pdf
NTP095N65S3HF
Виробник: onsemi
Description: MOSFET N-CH 650V 36A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
на замовлення 476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+528.50 грн
50+275.81 грн
100+253.35 грн
В кошику  од. на суму  грн.
NTMYS014N06CLTWG ntmys014n06cl-d.pdf
NTMYS014N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.01 грн
Мінімальне замовлення: 3000 шт
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NTMYS025N06CLTWG ntmys025n06cl-d.pdf
NTMYS025N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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NTMYS2D4N04CTWG ntmys2d4n04c-d.pdf
NTMYS2D4N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
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NTMYS7D3N04CLTWG ntmys7d3n04cl-d.pdf
NTMYS7D3N04CLTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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NTMYS8D0N04CTWG ntmys8d0n04c-d.pdf
NTMYS8D0N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+54.18 грн
6000+44.74 грн
Мінімальне замовлення: 3000 шт
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NCP171AMX180175TCG ncp171-d.pdf
NCP171AMX180175TCG
Виробник: onsemi
Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.11V @ 80mA
Protection Features: Over Current, Over Temperature
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NCP171AMX280275TCG ncp171-d.pdf
NCP171AMX280275TCG
Виробник: onsemi
Description: IC REG LINEAR 2.8V 80MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.075V @ 80mA
Protection Features: Over Current, Over Temperature
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NFAM3065L4BT nfam3065l4bt-d.pdf
NFAM3065L4BT
Виробник: onsemi
Description: IPM 650V 30A
Packaging: Tube
Package / Case: 39-PowerDIP Module (1.413", 35.90mm), 30 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 650 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1793.57 грн
90+1342.63 грн
540+1145.71 грн
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FSB50250BS fsb50250b-d.pdf
FSB50250BS
Виробник: onsemi
Description: IPM 500V 2A
Voltage: 500 V
Current: 1.9 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
450+327.30 грн
Мінімальне замовлення: 450 шт
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EGP30J egp30k-d.pdf
EGP30J
Виробник: onsemi
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.13 грн
10+49.90 грн
100+34.57 грн
500+27.11 грн
Мінімальне замовлення: 6 шт
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EGP30J egp30k-d.pdf
EGP30J
Виробник: onsemi
Description: DIODE GEN PURP 600V 3A DO201AD
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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FGY75T95SQDT fgy75t95sqdt-d.pdf
FGY75T95SQDT
Виробник: onsemi
Description: IGBT TRENCH FS 950V 150A TO-247
Power - Max: 434 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector (Ic) (Max): 150 A
Gate Charge: 137 nC
Test Condition: 600V, 75A, 4.7Ohm, 15V
Switching Energy: 8.8mJ (on), 3.2mJ (off)
Td (on/off) @ 25°C: 28.8ns/117ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A
Reverse Recovery Time (trr): 259 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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NCV51705MNTWG ncv51705-d.pdf
NCV51705MNTWG
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 6A, 6A
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Gate Type: SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 8ns
Supplier Device Package: 24-QFNW (4x4)
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+145.65 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NCV7357MW3R2G ncv7357-d.pdf
NCV7357MW3R2G
Виробник: onsemi
Description: IC TRANSCEIVER FULL 2/1 8DFNW
Qualification: AEC-Q100
Grade: Automotive
Duplex: Full
Supplier Device Package: 8-DFNW (3x3)
Protocol: CANbus
Data Rate: 1Mbps
Number of Drivers/Receivers: 2/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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NCV8187AMN120TAG ncv8187-d.pdf
NCV8187AMN120TAG
Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6DFN
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-DFN (3x3)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
Grade: Automotive
Control Features: Enable, Power Good
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NCV8187AMT120TAG ncv8187-d.pdf
NCV8187AMT120TAG
Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.495V @ 1.2A
PSRR: 75dB (1kHz)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.23 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NIS5021MT2TXG NIS5020-21_NIS5820_Rev3_Jul2019.pdf
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Part Status: Obsolete
Supplier Device Package: 10-WDFN (4x4)
Operating Temperature: -40°C ~ 150°C
Current - Output: 12A
Voltage - Input: 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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NTTFS010N10MCLTAG nttfs010n10mcl-d.pdf
NTTFS010N10MCLTAG
Виробник: onsemi
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 85µA
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+45.85 грн
3000+43.43 грн
4500+43.29 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVB150N65S3F nvb150n65s3f-d.pdf
NVB150N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 97600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+132.11 грн
1600+125.71 грн
Мінімальне замовлення: 800 шт
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NVMFD6H852NLT1G nvmfd6h852nl-d.pdf
NVMFD6H852NLT1G
Виробник: onsemi
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
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NVMFD6H852NLWFT1G nvmfd6h852nl-d.pdf
NVMFD6H852NLWFT1G
Виробник: onsemi
Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
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NVMJS1D5N04CLTWG nvmjs1d5n04cl-d.pdf
NVMJS1D5N04CLTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+48.31 грн
6000+45.70 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVMJS2D5N06CLTWG nvmjs2d5n06cl-d.pdf
NVMJS2D5N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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NVMYS011N04CTWG nvmys011n04c-d.pdf
NVMYS011N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMYS014N06CLTWG nvmys014n06cl-d.pdf
NVMYS014N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NVMYS021N06CLTWG nvmys021n06cl-d.pdf
NVMYS021N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
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NVMYS025N06CLTWG nvmys025n06cl-d.pdf
NVMYS025N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMYS3D3N06CLTWG nvmys3d3n06cl-d.pdf
NVMYS3D3N06CLTWG
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+49.08 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVMYS5D3N04CTWG nvmys5d3n04c-d.pdf
NVMYS5D3N04CTWG
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.52 грн
6000+27.55 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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