Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105092) > Сторінка 923 з 1752
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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RXL035N03TCR | Rohm Semiconductor |
Description: NCH 30V 3..5A SMALL SIGNAL MOSFEGate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 910mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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RTM002P02T2L | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA VMT3Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: VMT3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 150mW (Ta) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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VT6Z1T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A 6VMT |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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VT6Z1T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 20V 0.2A 6VMT |
на замовлення 15924 шт: термін постачання 21-31 дні (днів) |
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QH8KA3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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QH8KA3TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2305 шт: термін постачання 21-31 дні (днів) |
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QH8KB6TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 8A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8KB6TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 8A TSMT8Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drain to Source Voltage (Vdss): 40V |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
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QH8JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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QH8JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 57658 шт: термін постачання 21-31 дні (днів) |
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CSL0902DT1C | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 710mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia Grade: Automotive Qualification: AEC-Q102 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CSL0902DT1C | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 710mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia Grade: Automotive Qualification: AEC-Q102 |
на замовлення 668 шт: термін постачання 21-31 дні (днів) |
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CSL0902DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 560mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CSL0902DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 560mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1807 шт: термін постачання 21-31 дні (днів) |
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RB068VWM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDECurrent - Reverse Leakage @ Vr: 300 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDEVoltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 60 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A |
на замовлення 2352 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-30TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 2A PMDECurrent - Reverse Leakage @ Vr: 600 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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RB068VWM150TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDEMounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 2938 шт: термін постачання 21-31 дні (днів) |
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RB068VWM100TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDECurrent - Reverse Leakage @ Vr: 300 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2748 шт: термін постачання 21-31 дні (днів) |
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RB068VWM150TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDECurrent - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2564 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-40TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDECurrent - Reverse Leakage @ Vr: 500 nA @ 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 1513 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-60TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDECurrent - Reverse Leakage @ Vr: 500 nA @ 60 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 5402 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDECurrent - Reverse Leakage @ Vr: 500 nA @ 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 175°C Supplier Device Package: PMDE Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 5744 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPower - Max: 404 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 114 A Part Status: Not For New Designs Gate Charge: 79 nC Test Condition: 400V, 75A, 10Ohm, 15V Switching Energy: 3.32mJ (on), 1.9mJ (off) Td (on/off) @ 25°C: 43ns/113ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 393 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPower - Max: 404 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 114 A Gate Charge: 79 nC Test Condition: 400V, 75A, 10Ohm, 15V Switching Energy: 3.44mJ (on), 1.9mJ (off) Td (on/off) @ 25°C: 43ns/113ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Reverse Recovery Time (trr): 116 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65EGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 114A TO-247NPower - Max: 404 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 114 A Gate Charge: 79 nC Test Condition: 400V, 75A, 10Ohm, 15V Switching Energy: 3.44mJ (on), 1.9mJ (off) Td (on/off) @ 25°C: 43ns/113ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Reverse Recovery Time (trr): 116 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 419 шт: термін постачання 21-31 дні (днів) |
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RB480Y-90FHT2R | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 90V 100MA EMD4Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 90 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: EMD4 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Independent Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-75-4, SOT-543 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB480KTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTTKY 40V UMD4 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SML-D22YVWT86 | Rohm Semiconductor |
Description: 2-COLOR TYPE MINI-MOLD CHIP LED: |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SML-D22YVWT86 | Rohm Semiconductor |
Description: 2-COLOR TYPE MINI-MOLD CHIP LED: |
на замовлення 2825 шт: термін постачання 21-31 дні (днів) |
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RV5A040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A DFN1616-6Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -8V, 0V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN1616-8S Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWFDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RV5A040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A DFN1616-6Mounting Type: Surface Mount Package / Case: 6-PowerWFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -8V, 0V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN1616-8S Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
на замовлення 5995 шт: термін постачання 21-31 дні (днів) |
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YFZVFHTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 7.99V 500MW TUMD2MQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 5 V Power - Max: 500 mW Grade: Automotive Supplier Device Package: TUMD2M Impedance (Max) (Zzt): 8 Ohms Voltage - Zener (Nom) (Vz): 7.99 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Tolerance: ±2.57% Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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YFZVFHTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 7.99V 500MW TUMD2MQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 5 V Power - Max: 500 mW Grade: Automotive Supplier Device Package: TUMD2M Impedance (Max) (Zzt): 8 Ohms Voltage - Zener (Nom) (Vz): 7.99 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Tolerance: ±2.57% Packaging: Cut Tape (CT) |
на замовлення 5574 шт: термін постачання 21-31 дні (днів) |
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| RPI-574 | Rohm Semiconductor |
Description: SENSOR OPT SLOT PHOTOTRAN PCB MTCurrent - DC Forward (If) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 30 mA Response Time: 10µs, 10µs Output Configuration: Phototransistor Operating Temperature: -25°C ~ 85°C Mounting Type: Through Hole Sensing Method: Through-Beam Sensing Distance: 0.197" (5mm) Package / Case: PCB Mount Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||
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RS3E075ATTB1 | Rohm Semiconductor |
Description: PCH -30V -7.5A MIDDLE POWER MOSF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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RS3E075ATTB1 | Rohm Semiconductor |
Description: PCH -30V -7.5A MIDDLE POWER MOSF |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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RH6P040BHTB1 | Rohm Semiconductor |
Description: NCH 100V 40A, HSMT8, POWER MOSFE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RH6P040BHTB1 | Rohm Semiconductor |
Description: NCH 100V 40A, HSMT8, POWER MOSFE |
на замовлення 5970 шт: термін постачання 21-31 дні (днів) |
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RD3L07BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 115A, TO-252, POWER MOSFInput Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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RD3L07BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 115A, TO-252, POWER MOSFDrain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF5103 | Rohm Semiconductor |
Description: RES 510K OHM 1% 1/2W 0805Resistance: 510 kOhms Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.5W, 1/2W Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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SDR10EZPF5103 | Rohm Semiconductor |
Description: RES 510K OHM 1% 1/2W 0805Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.5W, 1/2W Packaging: Cut Tape (CT) Resistance: 510 kOhms |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
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R6507ENXC7G | Rohm Semiconductor |
Description: 650V 7A TO-220FM, LOW-NOISE POWEInput Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 46W (Tc) Packaging: Tube Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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RV5C040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 4A DFN1616-6Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -8V, 0V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN1616-8S Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RV5C040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 4A DFN1616-6Drain to Source Voltage (Vdss): 20 V Vgs (Max): -8V, 0V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN1616-8S Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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RSB6.8JS2T2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD6Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Bidirectional Channels: 2 Supplier Device Package: EMD6 Voltage - Reverse Standoff (Typ): 3.5V (Max) Capacitance @ Frequency: 1pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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RSB6.8JS2T2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD6Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Bidirectional Channels: 2 Supplier Device Package: EMD6 Voltage - Reverse Standoff (Typ): 3.5V (Max) Capacitance @ Frequency: 1pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 7935 шт: термін постачання 21-31 дні (днів) |
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RSB6.8CST2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM VMN2 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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RSB6.8CST2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM VMN2 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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RSB6.8JS2FHT2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD6Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Not For New Designs Power Line Protection: No Voltage - Breakdown (Min): 6V Bidirectional Channels: 2 Supplier Device Package: EMD6 Voltage - Reverse Standoff (Typ): 3.5V Capacitance @ Frequency: 1pF @ 1MHz Applications: Automotive Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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RSB6.8JS2FHT2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD6Applications: Automotive Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Not For New Designs Power Line Protection: No Voltage - Breakdown (Min): 6V Bidirectional Channels: 2 Supplier Device Package: EMD6 Voltage - Reverse Standoff (Typ): 3.5V Capacitance @ Frequency: 1pF @ 1MHz |
на замовлення 7470 шт: термін постачання 21-31 дні (днів) |
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RSB6.8ZSNXT2N | Rohm Semiconductor | Description: TVS DIODE 3.5VWM GMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RSB6.8SFHTE61 | Rohm Semiconductor | Description: DIODE ZENER SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BU90T82-ZE2 | Rohm Semiconductor |
Description: IC DRIVER 8/0 27BIT LVDS DUALPart Status: Active Protocol: LVDS Data Rate: 1.218Gbps Number of Drivers/Receivers: 8/0 Voltage - Supply: 1.62V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: Driver Mounting Type: Surface Mount Package / Case: 72-TFBGA Packaging: Tape & Reel (TR) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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BU90T82-ZE2 | Rohm Semiconductor |
Description: IC DRIVER 8/0 27BIT LVDS DUALPart Status: Active Protocol: LVDS Data Rate: 1.218Gbps Number of Drivers/Receivers: 8/0 Voltage - Supply: 1.62V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: Driver Mounting Type: Surface Mount Package / Case: 72-TFBGA Packaging: Cut Tape (CT) |
на замовлення 6282 шт: термін постачання 21-31 дні (днів) |
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BD9757MWV-E2 | Rohm Semiconductor |
Description: IC REG DGTL CAM 8OUT 44UQFN Supplier Device Package: UQFN044V6060 Applications: Converter, Digital Camera Operating Temperature: -25°C ~ 85°C Voltage - Input: 24V Number of Outputs: 8 Mounting Type: Surface Mount Voltage - Output: Multiple Package / Case: 44-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR01MRTJ101 | Rohm Semiconductor |
Description: RES SMD 100 OHM 5% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Part Status: Discontinued at Digi-Key Resistance: 100 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD63521EFV-EVK-001 | Rohm Semiconductor |
Description: THIS EVALUATION BOARD IS A BOARDPart Status: Active Embedded: No Primary Attributes: 8V ~ 28V Supply Supplied Contents: Board(s) Utilized IC / Part: BD63521 Type: Power Management Function: Motor Controller/Driver Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BD2320UEFJ-LAE2 | Rohm Semiconductor |
Description: IC GATE DRVR HALF-BRIDGE 8SOICRise / Fall Time (Typ): 8ns, 6ns Supplier Device Package: 8-HTSOP-J High Side Voltage - Max (Bootstrap): 100 V Input Type: Non-Inverting Voltage - Supply: 7.5V ~ 14.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 3.5A, 4.5A Logic Voltage - VIL, VIH: 1.7V, 1.5V Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| RXL035N03TCR |
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Виробник: Rohm Semiconductor
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.62 грн |
| 10+ | 52.09 грн |
| 100+ | 34.18 грн |
| 500+ | 24.89 грн |
| 1000+ | 22.57 грн |
| RTM002P02T2L |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 8.81 грн |
| VT6Z1T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
Description: TRANS NPN/PNP 20V 0.2A 6VMT
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 7.63 грн |
| VT6Z1T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
Description: TRANS NPN/PNP 20V 0.2A 6VMT
на замовлення 15924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 12+ | 26.34 грн |
| 100+ | 16.42 грн |
| 500+ | 10.55 грн |
| 1000+ | 8.11 грн |
| 2000+ | 7.30 грн |
| QH8KA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| QH8KA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2305 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.86 грн |
| 10+ | 60.82 грн |
| 100+ | 43.44 грн |
| 500+ | 31.38 грн |
| 1000+ | 27.62 грн |
| QH8KB6TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 32.32 грн |
| QH8KB6TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.27 грн |
| 10+ | 61.56 грн |
| 100+ | 47.89 грн |
| 500+ | 38.09 грн |
| 1000+ | 31.03 грн |
| QH8JC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 35.67 грн |
| 6000+ | 32.03 грн |
| 9000+ | 30.85 грн |
| 15000+ | 27.93 грн |
| QH8JC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 57658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.96 грн |
| 10+ | 80.22 грн |
| 100+ | 53.88 грн |
| 500+ | 39.97 грн |
| 1000+ | 36.56 грн |
| CSL0902DT1C |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CSL0902DT1C |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 14+ | 22.83 грн |
| 100+ | 16.41 грн |
| 500+ | 12.69 грн |
| CSL0902DT1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CSL0902DT1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1807 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 15+ | 20.74 грн |
| 100+ | 14.89 грн |
| 500+ | 11.48 грн |
| 1000+ | 10.65 грн |
| RB068VWM100TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.31 грн |
| 100+ | 21.24 грн |
| 500+ | 15.18 грн |
| 1000+ | 13.65 грн |
| RB068VWM-60TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Description: DIODE SCHOTTKY 60V 2A PMDE
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
на замовлення 2352 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.44 грн |
| 10+ | 36.86 грн |
| 100+ | 24.92 грн |
| 500+ | 17.92 грн |
| 1000+ | 16.16 грн |
| RB068VWM-30TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDE
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 2A PMDE
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.02 грн |
| 10+ | 33.88 грн |
| 100+ | 24.33 грн |
| 500+ | 17.49 грн |
| 1000+ | 15.76 грн |
| RB068VWM150TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE SCHOTTKY 150V 2A PMDE
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 37.16 грн |
| 100+ | 24.62 грн |
| 500+ | 17.70 грн |
| 1000+ | 15.96 грн |
| RB068VWM100TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2748 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.69 грн |
| 10+ | 31.64 грн |
| 100+ | 20.36 грн |
| 500+ | 14.54 грн |
| 1000+ | 13.06 грн |
| RB068VWM150TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 150V 2A PMDE
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2564 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.79 грн |
| 10+ | 32.83 грн |
| 100+ | 21.54 грн |
| 500+ | 15.40 грн |
| 1000+ | 13.85 грн |
| RB068VWM-40TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 1513 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 37.61 грн |
| 100+ | 24.33 грн |
| 500+ | 17.49 грн |
| 1000+ | 15.76 грн |
| RB068VWM-60TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 5402 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 33.36 грн |
| 100+ | 21.80 грн |
| 500+ | 15.60 грн |
| 1000+ | 14.03 грн |
| RB068VWM-40TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 5744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.16 грн |
| 100+ | 21.24 грн |
| 500+ | 15.18 грн |
| 1000+ | 13.65 грн |
| RGSX5TS65HRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Part Status: Not For New Designs
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Part Status: Not For New Designs
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.12 грн |
| 30+ | 296.59 грн |
| RGSX5TS65EHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 563.36 грн |
| 30+ | 432.87 грн |
| 120+ | 401.11 грн |
| RGSX5TS65EGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 114A TO-247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 114A TO-247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 364.98 грн |
| 30+ | 197.82 грн |
| 120+ | 163.91 грн |
| RB480Y-90FHT2R |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD4
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75-4, SOT-543
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD4
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75-4, SOT-543
Packaging: Tape & Reel (TR)
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В кошику
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| RB480KTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 40V UMD4
Description: DIODE ARRAY SCHOTTKY 40V UMD4
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SML-D22YVWT86 |
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Виробник: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SML-D22YVWT86 |
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Виробник: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.14 грн |
| 10+ | 32.46 грн |
| 100+ | 21.49 грн |
| 1000+ | 15.57 грн |
| RV5A040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.88 грн |
| RV5A040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET P-CH 12V 4A DFN1616-6
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.82 грн |
| 10+ | 52.31 грн |
| 100+ | 35.18 грн |
| 500+ | 26.08 грн |
| 1000+ | 23.26 грн |
| YFZVFHTR8.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.42 грн |
| YFZVFHTR8.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
на замовлення 5574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 16+ | 19.63 грн |
| 100+ | 12.42 грн |
| 500+ | 8.71 грн |
| 1000+ | 7.75 грн |
| RPI-574 |
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Виробник: Rohm Semiconductor
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Current - DC Forward (If) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 30 mA
Response Time: 10µs, 10µs
Output Configuration: Phototransistor
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: PCB Mount
Packaging: Bulk
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Current - DC Forward (If) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 30 mA
Response Time: 10µs, 10µs
Output Configuration: Phototransistor
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: PCB Mount
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 500 шт
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| RS3E075ATTB1 |
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Виробник: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Description: PCH -30V -7.5A MIDDLE POWER MOSF
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RS3E075ATTB1 |
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Виробник: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Description: PCH -30V -7.5A MIDDLE POWER MOSF
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.92 грн |
| 10+ | 71.41 грн |
| 100+ | 55.70 грн |
| 500+ | 43.18 грн |
| 1000+ | 34.09 грн |
| RH6P040BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
Description: NCH 100V 40A, HSMT8, POWER MOSFE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 59.64 грн |
| RH6P040BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
Description: NCH 100V 40A, HSMT8, POWER MOSFE
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.18 грн |
| 10+ | 112.75 грн |
| 100+ | 90.62 грн |
| 500+ | 69.87 грн |
| 1000+ | 57.89 грн |
| RD3L07BBGTL1 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: NCH 60V 115A, TO-252, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| RD3L07BBGTL1 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Description: NCH 60V 115A, TO-252, POWER MOSF
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.82 грн |
| 10+ | 196.85 грн |
| 100+ | 158.21 грн |
| 500+ | 121.99 грн |
| 1000+ | 101.07 грн |
| SDR10EZPF5103 |
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Виробник: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Resistance: 510 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Description: RES 510K OHM 1% 1/2W 0805
Resistance: 510 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SDR10EZPF5103 |
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Виробник: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 510 kOhms
Description: RES 510K OHM 1% 1/2W 0805
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 510 kOhms
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.82 грн |
| 34+ | 8.95 грн |
| 50+ | 6.16 грн |
| 100+ | 4.97 грн |
| 500+ | 3.65 грн |
| 1000+ | 3.23 грн |
| R6507ENXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 46W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 46W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.08 грн |
| 50+ | 77.90 грн |
| 100+ | 46.38 грн |
| RV5C040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| RV5C040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Description: MOSFET P-CH 20V 4A DFN1616-6
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.69 грн |
| 10+ | 51.64 грн |
| 100+ | 36.88 грн |
| 500+ | 28.23 грн |
| 1000+ | 23.93 грн |
| RSB6.8JS2T2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RSB6.8JS2T2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 7935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.87 грн |
| 10+ | 39.47 грн |
| 100+ | 25.62 грн |
| 500+ | 18.45 грн |
| 1000+ | 16.65 грн |
| 2000+ | 15.13 грн |
| RSB6.8CST2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RSB6.8CST2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 12+ | 26.56 грн |
| RSB6.8JS2FHT2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Description: TVS DIODE 3.5VWM EMD6
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RSB6.8JS2FHT2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
Description: TVS DIODE 3.5VWM EMD6
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
на замовлення 7470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.54 грн |
| 10+ | 38.43 грн |
| 100+ | 25.03 грн |
| 500+ | 18.06 грн |
| 1000+ | 16.31 грн |
| 2000+ | 14.84 грн |
| RSB6.8ZSNXT2N |
Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Description: TVS DIODE 3.5VWM GMD2
товару немає в наявності
В кошику
од. на суму грн.
| RSB6.8SFHTE61 |
Виробник: Rohm Semiconductor
Description: DIODE ZENER SMD
Description: DIODE ZENER SMD
товару немає в наявності
В кошику
од. на суму грн.
| BU90T82-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Tape & Reel (TR)
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Tape & Reel (TR)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 330.23 грн |
| BU90T82-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Cut Tape (CT)
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Cut Tape (CT)
на замовлення 6282 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 609.08 грн |
| 10+ | 455.11 грн |
| 25+ | 422.23 грн |
| 100+ | 362.38 грн |
| 250+ | 346.23 грн |
| 500+ | 336.50 грн |
| BD9757MWV-E2 |
Виробник: Rohm Semiconductor
Description: IC REG DGTL CAM 8OUT 44UQFN
Supplier Device Package: UQFN044V6060
Applications: Converter, Digital Camera
Operating Temperature: -25°C ~ 85°C
Voltage - Input: 24V
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: Multiple
Package / Case: 44-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG DGTL CAM 8OUT 44UQFN
Supplier Device Package: UQFN044V6060
Applications: Converter, Digital Camera
Operating Temperature: -25°C ~ 85°C
Voltage - Input: 24V
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: Multiple
Package / Case: 44-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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В кошику
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| MCR01MRTJ101 |
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Виробник: Rohm Semiconductor
Description: RES SMD 100 OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
Description: RES SMD 100 OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
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| BD63521EFV-EVK-001 |
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Виробник: Rohm Semiconductor
Description: THIS EVALUATION BOARD IS A BOARD
Part Status: Active
Embedded: No
Primary Attributes: 8V ~ 28V Supply
Supplied Contents: Board(s)
Utilized IC / Part: BD63521
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Description: THIS EVALUATION BOARD IS A BOARD
Part Status: Active
Embedded: No
Primary Attributes: 8V ~ 28V Supply
Supplied Contents: Board(s)
Utilized IC / Part: BD63521
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10445.76 грн |
| BD2320UEFJ-LAE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.




























