Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102204) > Сторінка 943 з 1704
| Фото | Назва | Виробник | Інформація |
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BR93G46FV-3AGTE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPBPackaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SSOP-B Part Status: Not For New Designs Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 64 x 16 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RX3P07CBHC16 | Rohm Semiconductor |
Description: NCH 100V 70A, TO-220AB, POWER MPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
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DTA144EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BR25H256FVT-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 3.5ms Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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KDZVTFTR47A | Rohm Semiconductor |
Description: DIODE ZENER 47V 1W PMDUPackaging: Tape & Reel (TR) Tolerance: ±6.38% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Supplier Device Package: PMDU Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KDZVTFTR47A | Rohm Semiconductor |
Description: DIODE ZENER 47V 1W PMDUPackaging: Cut Tape (CT) Tolerance: ±6.38% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Supplier Device Package: PMDU Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 36 V |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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| ML610Q174-405GAZWAAL | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPPackaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ML610Q174-404GAZWAAL | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPPackaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RR274EA-400FHTR | Rohm Semiconductor |
Description: DIODE ARRAY GP 400V 500MA TSMD5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 500mA Supplier Device Package: TSMD5 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 1705 шт: термін постачання 21-31 дні (днів) |
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BD83A04EFV-ME2 | Rohm Semiconductor |
Description: IC LED DRV REG PWM 120MA HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Voltage - Output: 50V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 200kHz ~ 2.42MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C Current - Output / Channel: 120mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 24-HTSSOP-B Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 48V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD83A04EFV-ME2 | Rohm Semiconductor |
Description: IC LED DRV REG PWM 120MA HTSSOPPackaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Voltage - Output: 50V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 200kHz ~ 2.42MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C Current - Output / Channel: 120mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 24-HTSSOP-B Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 48V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 377 шт: термін постачання 21-31 дні (днів) |
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RB078BM30SFHTL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB078BM30SFHTL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD6047AGUL-E2 | Rohm Semiconductor |
Description: BD6047AGUL PROTECTS THE DEVICESPackaging: Tape & Reel (TR) Package / Case: 9-UFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.2V ~ 28V Applications: Overvoltage Protection Current - Supply: 40µA Supplier Device Package: VCSP50L1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD6047AGUL-E2 | Rohm Semiconductor |
Description: BD6047AGUL PROTECTS THE DEVICESPackaging: Cut Tape (CT) Package / Case: 9-UFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.2V ~ 28V Applications: Overvoltage Protection Current - Supply: 40µA Supplier Device Package: VCSP50L1 Part Status: Active |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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DTC113ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84B20VLYFHT116 | Rohm Semiconductor |
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84B20VLYFHT116 | Rohm Semiconductor |
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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RBQ20T45ANZC9 | Rohm Semiconductor |
Description: RBQ20T45ANZ IS LOW IRPackaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Current - Reverse Leakage @ Vr: 140 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RBQ20T45ANZC9 | Rohm Semiconductor |
Description: RBQ20T45ANZ IS LOW IRPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Current - Reverse Leakage @ Vr: 140 µA @ 45 V |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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RB058RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB058RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB048RSM15STL1 | Rohm Semiconductor |
Description: 150V 8A, TO-277GE, ULTRA LOW IRPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB048RSM15STL1 | Rohm Semiconductor |
Description: 150V 8A, TO-277GE, ULTRA LOW IRPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ15BM100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 15A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RBQ15BM100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 15A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3964 шт: термін постачання 21-31 дні (днів) |
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RB058RSM15STL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB058RSM15STL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB078RSM15STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB078RSM15STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3864 шт: термін постачання 21-31 дні (днів) |
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RB058RSM15STFTL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB058RSM15STFTL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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RS6G100BGTB1 | Rohm Semiconductor |
Description: NCH 40V 100A, HSOP8, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS6G100BGTB1 | Rohm Semiconductor |
Description: NCH 40V 100A, HSOP8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V |
на замовлення 2363 шт: термін постачання 21-31 дні (днів) |
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RS6P060BHTB1 | Rohm Semiconductor |
Description: NCH 100V 60A, HSOP8, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS6P060BHTB1 | Rohm Semiconductor |
Description: NCH 100V 60A, HSOP8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V |
на замовлення 2157 шт: термін постачання 21-31 дні (днів) |
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| ML620Q156-614TBZWAX | Rohm Semiconductor |
Description: IC Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ML620Q156-614TBZWARL | Rohm Semiconductor |
Description: IC Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ML610Q174-400GAZWAAL | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPPackaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RD3G03BBGTL1 | Rohm Semiconductor |
Description: NCH 40V 65A, TO-252, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RD3G03BBGTL1 | Rohm Semiconductor |
Description: NCH 40V 65A, TO-252, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V |
на замовлення 2492 шт: термін постачання 21-31 дні (днів) |
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RD3L03BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 50A, TO-252, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RD3L03BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 50A, TO-252, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
на замовлення 2108 шт: термін постачання 21-31 дні (днів) |
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RSX058BM2SFHTL | Rohm Semiconductor |
Description: 200V 3A, TO-252, ULTRA LOW IR SBPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RSX058BM2SFHTL | Rohm Semiconductor |
Description: 200V 3A, TO-252, ULTRA LOW IR SBPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2483 шт: термін постачання 21-31 дні (днів) |
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RSX078BM2SFHTL | Rohm Semiconductor |
Description: 200V 5A, TO-252, ULTRA LOW IR SBPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RSX078BM2SFHTL | Rohm Semiconductor |
Description: 200V 5A, TO-252, ULTRA LOW IR SBPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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UCR006YVPFLR680 | Rohm Semiconductor |
Description: RES 0.68 OHM 1% 1/10W 0201Packaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: 0201 (0603 Metric) Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.024" L x 0.013" W (0.62mm x 0.32mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0201 Height - Seated (Max): 0.011" (0.29mm) Part Status: Active Resistance: 680 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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UCR006YVPFLR680 | Rohm Semiconductor |
Description: RES 0.68 OHM 1% 1/10W 0201Packaging: Cut Tape (CT) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: 0201 (0603 Metric) Temperature Coefficient: 0/ +300ppm/°C Size / Dimension: 0.024" L x 0.013" W (0.62mm x 0.32mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0201 Height - Seated (Max): 0.011" (0.29mm) Part Status: Active Resistance: 680 mOhms |
на замовлення 13825 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPFLR680 | Rohm Semiconductor |
Description: RES SMD 0.68 OHM 1% 2W 2512 WIDEPackaging: Tape & Reel (TR) Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Part Status: Active Resistance: 680 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LTR100JZPFLR680 | Rohm Semiconductor |
Description: RES SMD 0.68 OHM 1% 2W 2512 WIDEPackaging: Cut Tape (CT) Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Part Status: Active Resistance: 680 mOhms |
на замовлення 3965 шт: термін постачання 21-31 дні (днів) |
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LTR18EZPFLR680 | Rohm Semiconductor |
Description: RES 0.68 OHM 1% 1W 0612Packaging: Tape & Reel (TR) Power (Watts): 1W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Part Status: Active Resistance: 680 mOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LTR18EZPFLR680 | Rohm Semiconductor |
Description: RES 0.68 OHM 1% 1W 0612Packaging: Cut Tape (CT) Power (Watts): 1W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Part Status: Active Resistance: 680 mOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BD9G201UEFJ-LBE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 1.5A 8HTSOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.5A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 42V Topology: Buck Supplier Device Package: 8-HTSOP-JES Synchronous Rectifier: No Voltage - Output (Max): 42V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD9G201UEFJ-LBE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 1.5A 8HTSOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.5A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 42V Topology: Buck Supplier Device Package: 8-HTSOP-JES Synchronous Rectifier: No Voltage - Output (Max): 42V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD933N1WG-CTR | Rohm Semiconductor |
Description: QUICUR, NANO CAP, 150MA 3.3V, FIPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.8V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD933N1WG-CTR | Rohm Semiconductor |
Description: QUICUR, NANO CAP, 150MA 3.3V, FIPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.8V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
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SCT4018KW7TL | Rohm Semiconductor |
Description: 1200V, 75A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SCT4018KW7TL | Rohm Semiconductor |
Description: 1200V, 75A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
на замовлення 704 шт: термін постачання 21-31 дні (днів) |
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SCT4013DEC11 | Rohm Semiconductor |
Description: 750V, 105A, 3-PIN THD, TRENCH-STPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V Power Dissipation (Max): 312W Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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| BR93G46FV-3AGTE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.10 грн |
| 10+ | 48.52 грн |
| 25+ | 46.26 грн |
| 50+ | 41.88 грн |
| 100+ | 40.40 грн |
| 250+ | 38.52 грн |
| 500+ | 36.55 грн |
| 1000+ | 35.26 грн |
| RX3P07CBHC16 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 70A, TO-220AB, POWER M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Description: NCH 100V 70A, TO-220AB, POWER M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.10 грн |
| 10+ | 285.06 грн |
| 100+ | 231.01 грн |
| 500+ | 183.29 грн |
| DTA144EUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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| BR25H256FVT-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.34 грн |
| 10+ | 76.42 грн |
| 25+ | 75.47 грн |
| 50+ | 70.38 грн |
| 100+ | 62.94 грн |
| 250+ | 62.41 грн |
| 500+ | 60.48 грн |
| 1000+ | 58.32 грн |
| KDZVTFTR47A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 47V 1W PMDU
Packaging: Tape & Reel (TR)
Tolerance: ±6.38%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Description: DIODE ZENER 47V 1W PMDU
Packaging: Tape & Reel (TR)
Tolerance: ±6.38%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
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| KDZVTFTR47A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 47V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±6.38%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Description: DIODE ZENER 47V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±6.38%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 12+ | 28.87 грн |
| 100+ | 21.60 грн |
| 500+ | 15.93 грн |
| 1000+ | 12.31 грн |
| ML610Q174-405GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
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| ML610Q174-404GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
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| RR274EA-400FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1705 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.02 грн |
| 10+ | 48.68 грн |
| 100+ | 34.86 грн |
| 500+ | 25.43 грн |
| 1000+ | 23.08 грн |
| BD83A04EFV-ME2 |
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Виробник: Rohm Semiconductor
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| BD83A04EFV-ME2 |
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Виробник: Rohm Semiconductor
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 377 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 143.46 грн |
| 25+ | 131.26 грн |
| 100+ | 110.61 грн |
| 250+ | 104.62 грн |
| RB078BM30SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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| RB078BM30SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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| BD6047AGUL-E2 |
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Виробник: Rohm Semiconductor
Description: BD6047AGUL PROTECTS THE DEVICES
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 28V
Applications: Overvoltage Protection
Current - Supply: 40µA
Supplier Device Package: VCSP50L1
Part Status: Active
Description: BD6047AGUL PROTECTS THE DEVICES
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 28V
Applications: Overvoltage Protection
Current - Supply: 40µA
Supplier Device Package: VCSP50L1
Part Status: Active
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| BD6047AGUL-E2 |
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Виробник: Rohm Semiconductor
Description: BD6047AGUL PROTECTS THE DEVICES
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 28V
Applications: Overvoltage Protection
Current - Supply: 40µA
Supplier Device Package: VCSP50L1
Part Status: Active
Description: BD6047AGUL PROTECTS THE DEVICES
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 28V
Applications: Overvoltage Protection
Current - Supply: 40µA
Supplier Device Package: VCSP50L1
Part Status: Active
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.71 грн |
| 10+ | 155.51 грн |
| 25+ | 146.76 грн |
| 100+ | 117.32 грн |
| 250+ | 110.16 грн |
| 500+ | 96.39 грн |
| 1000+ | 78.56 грн |
| DTC113ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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| BZX84B20VLYFHT116 |
Виробник: Rohm Semiconductor
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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| BZX84B20VLYFHT116 |
Виробник: Rohm Semiconductor
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.91 грн |
| 15+ | 21.59 грн |
| 100+ | 10.90 грн |
| 500+ | 9.07 грн |
| 1000+ | 7.06 грн |
| RBQ20T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: RBQ20T45ANZ IS LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Description: RBQ20T45ANZ IS LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
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| RBQ20T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: RBQ20T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Description: RBQ20T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.57 грн |
| 10+ | 101.17 грн |
| 100+ | 78.85 грн |
| 500+ | 61.13 грн |
| RB058RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 34.54 грн |
| RB058RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.52 грн |
| 10+ | 80.38 грн |
| 100+ | 53.71 грн |
| 500+ | 39.67 грн |
| 1000+ | 36.22 грн |
| 2000+ | 33.32 грн |
| RB048RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 47.60 грн |
| RB048RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.49 грн |
| 10+ | 92.92 грн |
| 100+ | 72.40 грн |
| 500+ | 56.12 грн |
| 1000+ | 44.31 грн |
| 2000+ | 43.02 грн |
| RBQ15BM100AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RBQ15BM100AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 15A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 15A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3964 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.57 грн |
| 10+ | 75.13 грн |
| 100+ | 72.87 грн |
| 500+ | 63.34 грн |
| RB058RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 18.19 грн |
| RB058RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.97 грн |
| 10+ | 76.99 грн |
| 100+ | 51.50 грн |
| 500+ | 38.06 грн |
| 1000+ | 34.76 грн |
| 2000+ | 31.97 грн |
| RB078RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RB078RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.37 грн |
| 10+ | 76.10 грн |
| 100+ | 57.80 грн |
| 500+ | 44.18 грн |
| 1000+ | 39.81 грн |
| RB058RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RB058RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.44 грн |
| 10+ | 88.23 грн |
| 100+ | 59.45 грн |
| 500+ | 44.19 грн |
| 1000+ | 40.46 грн |
| 2000+ | 37.31 грн |
| RS6G100BGTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| RS6G100BGTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
на замовлення 2363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.71 грн |
| 10+ | 111.35 грн |
| 100+ | 76.08 грн |
| 500+ | 57.25 грн |
| 1000+ | 56.54 грн |
| RS6P060BHTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| RS6P060BHTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
на замовлення 2157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.50 грн |
| 10+ | 135.78 грн |
| 100+ | 93.81 грн |
| 500+ | 73.41 грн |
| ML610Q174-400GAZWAAL |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
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| RD3G03BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
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| RD3G03BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.52 грн |
| 10+ | 115.64 грн |
| 100+ | 92.97 грн |
| 500+ | 71.68 грн |
| 1000+ | 59.39 грн |
| RD3L03BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 50A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Description: NCH 60V 50A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
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| RD3L03BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 50A, TO-252, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Description: NCH 60V 50A, TO-252, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
на замовлення 2108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.25 грн |
| 10+ | 95.50 грн |
| 100+ | 76.03 грн |
| 500+ | 60.38 грн |
| 1000+ | 51.23 грн |
| RSX058BM2SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: 200V 3A, TO-252, ULTRA LOW IR SB
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 200V 3A, TO-252, ULTRA LOW IR SB
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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| RSX058BM2SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: 200V 3A, TO-252, ULTRA LOW IR SB
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 200V 3A, TO-252, ULTRA LOW IR SB
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2483 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.49 грн |
| 10+ | 84.91 грн |
| 100+ | 66.04 грн |
| 500+ | 52.54 грн |
| 1000+ | 42.80 грн |
| RSX078BM2SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: 200V 5A, TO-252, ULTRA LOW IR SB
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 200V 5A, TO-252, ULTRA LOW IR SB
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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| RSX078BM2SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: 200V 5A, TO-252, ULTRA LOW IR SB
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 200V 5A, TO-252, ULTRA LOW IR SB
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.69 грн |
| 10+ | 88.23 грн |
| 100+ | 68.58 грн |
| 500+ | 54.55 грн |
| 1000+ | 44.44 грн |
| UCR006YVPFLR680 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.68 OHM 1% 1/10W 0201
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.024" L x 0.013" W (0.62mm x 0.32mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.011" (0.29mm)
Part Status: Active
Resistance: 680 mOhms
Description: RES 0.68 OHM 1% 1/10W 0201
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.024" L x 0.013" W (0.62mm x 0.32mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.011" (0.29mm)
Part Status: Active
Resistance: 680 mOhms
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| UCR006YVPFLR680 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.68 OHM 1% 1/10W 0201
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.024" L x 0.013" W (0.62mm x 0.32mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.011" (0.29mm)
Part Status: Active
Resistance: 680 mOhms
Description: RES 0.68 OHM 1% 1/10W 0201
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.024" L x 0.013" W (0.62mm x 0.32mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0201
Height - Seated (Max): 0.011" (0.29mm)
Part Status: Active
Resistance: 680 mOhms
на замовлення 13825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.07 грн |
| 10+ | 33.48 грн |
| 25+ | 27.75 грн |
| 50+ | 22.02 грн |
| 100+ | 16.48 грн |
| 250+ | 14.69 грн |
| 500+ | 11.82 грн |
| 1000+ | 9.19 грн |
| 5000+ | 8.73 грн |
| LTR100JZPFLR680 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 0.68 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 680 mOhms
Description: RES SMD 0.68 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 680 mOhms
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| LTR100JZPFLR680 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 0.68 OHM 1% 2W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 680 mOhms
Description: RES SMD 0.68 OHM 1% 2W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 680 mOhms
на замовлення 3965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.05 грн |
| 10+ | 65.50 грн |
| 50+ | 48.23 грн |
| 100+ | 40.21 грн |
| 500+ | 31.37 грн |
| 1000+ | 28.67 грн |
| LTR18EZPFLR680 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.68 OHM 1% 1W 0612
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 680 mOhms
Description: RES 0.68 OHM 1% 1W 0612
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 680 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 12.49 грн |
| LTR18EZPFLR680 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.68 OHM 1% 1W 0612
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 680 mOhms
Description: RES 0.68 OHM 1% 1W 0612
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 680 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.59 грн |
| 10+ | 38.90 грн |
| 50+ | 27.45 грн |
| 100+ | 21.25 грн |
| 500+ | 15.02 грн |
| 1000+ | 11.92 грн |
| BD9G201UEFJ-LBE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: No
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: No
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 82.48 грн |
| BD9G201UEFJ-LBE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: No
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: IC REG BUCK ADJ 1.5A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 42V
Topology: Buck
Supplier Device Package: 8-HTSOP-JES
Synchronous Rectifier: No
Voltage - Output (Max): 42V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 172.15 грн |
| 10+ | 148.72 грн |
| 25+ | 140.32 грн |
| 100+ | 112.20 грн |
| 250+ | 105.35 грн |
| 500+ | 92.18 грн |
| 1000+ | 75.12 грн |
| BD933N1WG-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA 3.3V, FI
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.8V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Grade: Automotive
Qualification: AEC-Q100
Description: QUICUR, NANO CAP, 150MA 3.3V, FI
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.8V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BD933N1WG-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA 3.3V, FI
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.8V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Grade: Automotive
Qualification: AEC-Q100
Description: QUICUR, NANO CAP, 150MA 3.3V, FI
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.8V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.09 грн |
| 10+ | 85.40 грн |
| 25+ | 81.09 грн |
| 100+ | 62.51 грн |
| 250+ | 58.43 грн |
| 500+ | 51.64 грн |
| 1000+ | 40.10 грн |
| SCT4018KW7TL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| SCT4018KW7TL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
на замовлення 704 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2143.12 грн |
| 10+ | 1834.16 грн |
| 100+ | 1620.37 грн |
| SCT4013DEC11 |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 105A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Description: 750V, 105A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
на замовлення 330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2152.35 грн |
| 30+ | 1348.58 грн |
| 120+ | 1301.57 грн |























