Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103512) > Сторінка 945 з 1726

Обрати Сторінку:   [  << Попередня Сторінка ]  1 172 344 516 688 860 940 941 942 943 944 945 946 947 948 949 950 1032 1204 1376 1548 1720 1726  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
товару немає в наявності
В кошику  од. на суму  грн.
SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товару немає в наявності
В кошику  од. на суму  грн.
SIR-563ST3F Rohm Semiconductor datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BH28MA3WHFV-TR BH28MA3WHFV-TR Rohm Semiconductor datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.8V 300MA 6-HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику  од. на суму  грн.
BH28SA3WGUT-E2 Rohm Semiconductor Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику  од. на суму  грн.
R6035KNZC17 R6035KNZC17 Rohm Semiconductor datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 35A TO3PF
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
на замовлення 277 шт:
термін постачання 21-31 дні (днів)
1+331.50 грн
30+269.06 грн
120+133.73 грн
В кошику  од. на суму  грн.
R6030KNZC17 R6030KNZC17 Rohm Semiconductor datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+651.13 грн
30+366.20 грн
120+308.93 грн
В кошику  од. на суму  грн.
R6030JNZC17 R6030JNZC17 Rohm Semiconductor datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
товару немає в наявності
В кошику  од. на суму  грн.
R6077VNZC17 R6077VNZC17 Rohm Semiconductor datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 407 шт:
термін постачання 21-31 дні (днів)
1+643.22 грн
30+365.41 грн
120+309.57 грн
В кошику  од. на суму  грн.
R6515KNZC17 R6515KNZC17 Rohm Semiconductor datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A TO3
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 60W (Tc)
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
2+235.77 грн
30+161.59 грн
120+157.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6530KNZC17 R6530KNZC17 Rohm Semiconductor datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
2+282.45 грн
30+222.79 грн
120+113.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6535ENZC17 R6535ENZC17 Rohm Semiconductor datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+601.28 грн
30+338.85 грн
120+286.19 грн
В кошику  од. на суму  грн.
R6530ENZC17 R6530ENZC17 Rohm Semiconductor datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
2+282.45 грн
30+222.79 грн
120+217.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6524KNZC17 R6524KNZC17 Rohm Semiconductor datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+503.97 грн
10+436.17 грн
100+357.37 грн
В кошику  од. на суму  грн.
SCT4036KEC11 SCT4036KEC11 Rohm Semiconductor datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4652 шт:
термін постачання 21-31 дні (днів)
1+1416.97 грн
30+856.23 грн
120+745.04 грн
510+673.21 грн
В кошику  од. на суму  грн.
SCT4026DEHRC11 SCT4026DEHRC11 Rohm Semiconductor datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+1390.07 грн
30+1100.15 грн
120+962.97 грн
В кошику  од. на суму  грн.
SCT4036KEHRC11 SCT4036KEHRC11 Rohm Semiconductor datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
1+1450.20 грн
10+1000.48 грн
В кошику  од. на суму  грн.
SCT4026DEC11 SCT4026DEC11 Rohm Semiconductor datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 4843 шт:
термін постачання 21-31 дні (днів)
1+1399.57 грн
30+844.73 грн
120+734.69 грн
510+662.58 грн
В кошику  од. на суму  грн.
SCT4062KEHRC11 SCT4062KEHRC11 Rohm Semiconductor datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Power Dissipation (Max): 115W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
1+876.61 грн
10+741.37 грн
В кошику  од. на суму  грн.
2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
8+39.56 грн
10+32.15 грн
100+22.35 грн
500+16.38 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+22.68 грн
2000+19.91 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 3543 шт:
термін постачання 21-31 дні (днів)
4+79.91 грн
10+47.77 грн
100+31.25 грн
500+22.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
11+29.27 грн
16+19.73 грн
100+9.95 грн
500+7.62 грн
1000+5.65 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
14+23.73 грн
22+14.40 грн
100+9.01 грн
500+6.25 грн
1000+5.53 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
на замовлення 9755 шт:
термін постачання 21-31 дні (днів)
12+27.69 грн
14+22.86 грн
50+12.05 грн
100+8.39 грн
500+5.07 грн
1000+3.51 грн
5000+2.88 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
5+75.16 грн
10+63.92 грн
50+53.62 грн
100+43.54 грн
500+30.96 грн
1000+25.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
RSA12LAGTR RSA12LAGTR Rohm Semiconductor Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.017" (0.43mm)
Supplier Device Package: 0508
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Metal Element
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 0.66W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 0.66W
Packaging: Cut Tape (CT)
Composition: Metal Element
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.017" (0.43mm)
Supplier Device Package: 0508
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
на замовлення 4105 шт:
термін постачання 21-31 дні (днів)
7+51.43 грн
10+36.72 грн
100+21.39 грн
1000+11.26 грн
2500+10.87 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±2%
Power (Watts): 0.667W, 2/3W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±2%
Power (Watts): 0.667W, 2/3W
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
RGW00TS65HRC11 RGW00TS65HRC11 Rohm Semiconductor datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Power - Max: 254 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 48ns/186ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+483.40 грн
10+399.06 грн
450+293.41 грн
В кошику  од. на суму  грн.
RGWX5TS65HRC11 RGWX5TS65HRC11 Rohm Semiconductor datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 132A TO-247N
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 348 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Part Status: Active
Gate Charge: 213 nC
Test Condition: 400V, 37.5A, 10Ohm, 15V
Td (on/off) @ 25°C: 62ns/237ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
1+330.71 грн
10+210.96 грн
В кошику  од. на суму  грн.
RGW80TS65HRC11 RGW80TS65HRC11 Rohm Semiconductor datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 80A TO-247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Td (on/off) @ 25°C: 42ns/148ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
2+262.67 грн
10+165.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
UFZVTE-175.1B UFZVTE-175.1B Rohm Semiconductor datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 500MW 5.1V, SOD-323FL, SMALL AND
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
11+30.86 грн
14+21.94 грн
100+12.44 грн
500+7.73 грн
1000+5.93 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BR24T64FVT-WE2 BR24T64FVT-WE2 Rohm Semiconductor datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 3594 шт:
термін постачання 21-31 дні (днів)
9+37.98 грн
10+34.89 грн
25+33.98 грн
50+31.23 грн
100+30.56 грн
250+29.66 грн
500+28.51 грн
1000+27.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ML9213GPZ03A-M Rohm Semiconductor Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+1.34 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
34+9.49 грн
65+4.72 грн
98+3.14 грн
114+2.51 грн
500+1.80 грн
1000+1.58 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
25+12.66 грн
49+6.25 грн
73+4.17 грн
100+3.35 грн
500+2.40 грн
1000+2.11 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Resistance: 51 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0508
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 1W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Resistance: 51 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0508
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 1W
Packaging: Cut Tape (CT)
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
23+14.24 грн
44+7.09 грн
65+4.74 грн
100+3.80 грн
500+2.73 грн
1000+2.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
2SA1038STPR Rohm Semiconductor Description: TRANS GP BJT PNP 120V 0.05A 3-PI
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
BA7615N-BZ Rohm Semiconductor Description: IC VIDEO SIGNAL SWITCHER 10SIP
Control Interface: Logic
Part Status: Obsolete
Supplier Device Package: 10-SIP
Applications: Consumer Video
Voltage - Supply: 4.5V ~ 13V
Function: Switch
Mounting Type: Through Hole
Package / Case: 10-SIP
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
R8008ANJFRGTL R8008ANJFRGTL Rohm Semiconductor datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 8A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
R8008ANJFRGTL R8008ANJFRGTL Rohm Semiconductor datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+431.18 грн
10+277.55 грн
100+199.66 грн
500+156.24 грн
В кошику  од. на суму  грн.
SFR10EZPF1200 SFR10EZPF1200 Rohm Semiconductor sfr-e.pdf Description: RES 120 OHM 1% 1/8W 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Resistance: 120 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+1.87 грн
10000+1.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR10EZPF1200 SFR10EZPF1200 Rohm Semiconductor sfr-e.pdf Description: RES 120 OHM 1% 1/8W 0805
Resistance: 120 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
на замовлення 14615 шт:
термін постачання 21-31 дні (днів)
24+13.45 грн
48+6.48 грн
70+4.36 грн
100+3.49 грн
500+2.51 грн
1000+2.20 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ESR01MZPF2201 ESR01MZPF2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 1% 1/5W 0402
Resistance: 2.2 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ESR01MZPF2201 ESR01MZPF2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 1% 1/5W 0402
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
Resistance: 2.2 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
на замовлення 8686 шт:
термін постачання 21-31 дні (днів)
12+27.69 грн
14+22.86 грн
50+12.05 грн
100+8.39 грн
500+5.07 грн
1000+3.51 грн
5000+2.88 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BU9795AFV-LBE2 BU9795AFV-LBE2 Rohm Semiconductor datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BU9795AFV-LBE2 BU9795AFV-LBE2 Rohm Semiconductor datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Cut Tape (CT)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Виробник: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Виробник: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SDR10EZPF4300
SDR10EZPF4300
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
товару немає в наявності
В кошику  од. на суму  грн.
SDR10EZPF4300
SDR10EZPF4300
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товару немає в наявності
В кошику  од. на суму  грн.
SIR-563ST3F datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BH28MA3WHFV-TR datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH28MA3WHFV-TR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.8V 300MA 6-HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику  од. на суму  грн.
BH28SA3WGUT-E2
Виробник: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику  од. на суму  грн.
R6035KNZC17 datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6035KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO3PF
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
на замовлення 277 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+331.50 грн
30+269.06 грн
120+133.73 грн
В кошику  од. на суму  грн.
R6030KNZC17 datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+651.13 грн
30+366.20 грн
120+308.93 грн
В кошику  од. на суму  грн.
R6030JNZC17 datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030JNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
товару немає в наявності
В кошику  од. на суму  грн.
R6077VNZC17 datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6077VNZC17
Виробник: Rohm Semiconductor
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 407 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+643.22 грн
30+365.41 грн
120+309.57 грн
В кошику  од. на суму  грн.
R6515KNZC17 datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A TO3
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 60W (Tc)
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+235.77 грн
30+161.59 грн
120+157.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6530KNZC17 datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.45 грн
30+222.79 грн
120+113.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6535ENZC17 datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+601.28 грн
30+338.85 грн
120+286.19 грн
В кошику  од. на суму  грн.
R6530ENZC17 datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530ENZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.45 грн
30+222.79 грн
120+217.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6524KNZC17 datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+503.97 грн
10+436.17 грн
100+357.37 грн
В кошику  од. на суму  грн.
SCT4036KEC11 datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEC11
Виробник: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4652 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1416.97 грн
30+856.23 грн
120+745.04 грн
510+673.21 грн
В кошику  од. на суму  грн.
SCT4026DEHRC11 datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEHRC11
Виробник: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1390.07 грн
30+1100.15 грн
120+962.97 грн
В кошику  од. на суму  грн.
SCT4036KEHRC11 datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEHRC11
Виробник: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1450.20 грн
10+1000.48 грн
В кошику  од. на суму  грн.
SCT4026DEC11 datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEC11
Виробник: Rohm Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 4843 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1399.57 грн
30+844.73 грн
120+734.69 грн
510+662.58 грн
В кошику  од. на суму  грн.
SCT4062KEHRC11 datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4062KEHRC11
Виробник: Rohm Semiconductor
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Power Dissipation (Max): 115W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+876.61 грн
10+741.37 грн
В кошику  од. на суму  грн.
2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.56 грн
10+32.15 грн
100+22.35 грн
500+16.38 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+22.68 грн
2000+19.91 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 3543 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.91 грн
10+47.77 грн
100+31.25 грн
500+22.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.27 грн
16+19.73 грн
100+9.95 грн
500+7.62 грн
1000+5.65 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.73 грн
22+14.40 грн
100+9.01 грн
500+6.25 грн
1000+5.53 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Виробник: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Виробник: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
на замовлення 9755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.69 грн
14+22.86 грн
50+12.05 грн
100+8.39 грн
500+5.07 грн
1000+3.51 грн
5000+2.88 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Виробник: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Виробник: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.16 грн
10+63.92 грн
50+53.62 грн
100+43.54 грн
500+30.96 грн
1000+25.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
RSA12LAGTR
RSA12LAGTR
Виробник: Rohm Semiconductor
Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.017" (0.43mm)
Supplier Device Package: 0508
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Metal Element
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 0.66W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 0.66W
Packaging: Cut Tape (CT)
Composition: Metal Element
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.017" (0.43mm)
Supplier Device Package: 0508
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
на замовлення 4105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.43 грн
10+36.72 грн
100+21.39 грн
1000+11.26 грн
2500+10.87 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±2%
Power (Watts): 0.667W, 2/3W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Resistance: 1 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±2%
Power (Watts): 0.667W, 2/3W
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
RGW00TS65HRC11 datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65HRC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Power - Max: 254 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 96 A
Part Status: Active
Gate Charge: 141 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 48ns/186ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+483.40 грн
10+399.06 грн
450+293.41 грн
В кошику  од. на суму  грн.
RGWX5TS65HRC11 datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65HRC11
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 132A TO-247N
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 348 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Part Status: Active
Gate Charge: 213 nC
Test Condition: 400V, 37.5A, 10Ohm, 15V
Td (on/off) @ 25°C: 62ns/237ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+330.71 грн
10+210.96 грн
В кошику  од. на суму  грн.
RGW80TS65HRC11 datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65HRC11
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Td (on/off) @ 25°C: 42ns/148ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+262.67 грн
10+165.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
UFZVTE-175.1B datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UFZVTE-175.1B
Виробник: Rohm Semiconductor
Description: 500MW 5.1V, SOD-323FL, SMALL AND
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.86 грн
14+21.94 грн
100+12.44 грн
500+7.73 грн
1000+5.93 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BR24T64FVT-WE2 datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T64FVT-WE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 3594 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.98 грн
10+34.89 грн
25+33.98 грн
50+31.23 грн
100+30.56 грн
250+29.66 грн
500+28.51 грн
1000+27.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ML9213GPZ03A-M
Виробник: Rohm Semiconductor
Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.34 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.49 грн
65+4.72 грн
98+3.14 грн
114+2.51 грн
500+1.80 грн
1000+1.58 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.66 грн
49+6.25 грн
73+4.17 грн
100+3.35 грн
500+2.40 грн
1000+2.11 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Виробник: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Resistance: 51 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0508
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 1W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Виробник: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Resistance: 51 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0508
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 0805 (2012 Metric), 0508
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 1W
Packaging: Cut Tape (CT)
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.24 грн
44+7.09 грн
65+4.74 грн
100+3.80 грн
500+2.73 грн
1000+2.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
2SA1038STPR
Виробник: Rohm Semiconductor
Description: TRANS GP BJT PNP 120V 0.05A 3-PI
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
BA7615N-BZ
Виробник: Rohm Semiconductor
Description: IC VIDEO SIGNAL SWITCHER 10SIP
Control Interface: Logic
Part Status: Obsolete
Supplier Device Package: 10-SIP
Applications: Consumer Video
Voltage - Supply: 4.5V ~ 13V
Function: Switch
Mounting Type: Through Hole
Package / Case: 10-SIP
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
R8008ANJFRGTL datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJFRGTL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 8A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
R8008ANJFRGTL datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJFRGTL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+431.18 грн
10+277.55 грн
100+199.66 грн
500+156.24 грн
В кошику  од. на суму  грн.
SFR10EZPF1200 sfr-e.pdf
SFR10EZPF1200
Виробник: Rohm Semiconductor
Description: RES 120 OHM 1% 1/8W 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Resistance: 120 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.87 грн
10000+1.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR10EZPF1200 sfr-e.pdf
SFR10EZPF1200
Виробник: Rohm Semiconductor
Description: RES 120 OHM 1% 1/8W 0805
Resistance: 120 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
на замовлення 14615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.45 грн
48+6.48 грн
70+4.36 грн
100+3.49 грн
500+2.51 грн
1000+2.20 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ESR01MZPF2201 esr-e.pdf
ESR01MZPF2201
Виробник: Rohm Semiconductor
Description: RES 2.2K OHM 1% 1/5W 0402
Resistance: 2.2 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ESR01MZPF2201 esr-e.pdf
ESR01MZPF2201
Виробник: Rohm Semiconductor
Description: RES 2.2K OHM 1% 1/5W 0402
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
Resistance: 2.2 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
на замовлення 8686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.69 грн
14+22.86 грн
50+12.05 грн
100+8.39 грн
500+5.07 грн
1000+3.51 грн
5000+2.88 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BU9795AFV-LBE2 datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9795AFV-LBE2
Виробник: Rohm Semiconductor
Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BU9795AFV-LBE2 datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9795AFV-LBE2
Виробник: Rohm Semiconductor
Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Cut Tape (CT)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 172 344 516 688 860 940 941 942 943 944 945 946 947 948 949 950 1032 1204 1376 1548 1720 1726  [ Наступна Сторінка >> ]