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R6030JNZC17 R6030JNZC17 Rohm Semiconductor datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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R6077VNZC17 R6077VNZC17 Rohm Semiconductor datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 407 шт:
термін постачання 21-31 дні (днів)
1+637.71 грн
30+362.29 грн
120+306.92 грн
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R6515KNZC17 R6515KNZC17 Rohm Semiconductor datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
2+233.75 грн
30+160.21 грн
120+156.15 грн
Мінімальне замовлення: 2
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R6530KNZC17 R6530KNZC17 Rohm Semiconductor datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
2+280.03 грн
30+220.89 грн
120+112.78 грн
Мінімальне замовлення: 2
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R6535ENZC17 R6535ENZC17 Rohm Semiconductor datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+596.14 грн
30+335.95 грн
120+283.74 грн
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R6530ENZC17 R6530ENZC17 Rohm Semiconductor datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
2+280.03 грн
30+220.89 грн
120+215.93 грн
Мінімальне замовлення: 2
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R6524KNZC17 R6524KNZC17 Rohm Semiconductor datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+499.66 грн
10+432.43 грн
100+354.31 грн
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SCT4036KEC11 SCT4036KEC11 Rohm Semiconductor datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4652 шт:
термін постачання 21-31 дні (днів)
1+945.97 грн
30+779.94 грн
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SCT4026DEHRC11 SCT4026DEHRC11 Rohm Semiconductor datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+1378.17 грн
30+1090.73 грн
120+954.72 грн
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SCT4036KEHRC11 SCT4036KEHRC11 Rohm Semiconductor datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Qualification: AEC-Q101
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+1287.97 грн
10+1092.90 грн
В кошику  од. на суму  грн.
SCT4026DEC11 SCT4026DEC11 Rohm Semiconductor datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 4843 шт:
термін постачання 21-31 дні (днів)
1+1317.77 грн
30+794.04 грн
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SCT4062KEHRC11 SCT4062KEHRC11 Rohm Semiconductor datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
1+869.10 грн
10+735.02 грн
В кошику  од. на суму  грн.
2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
8+39.22 грн
10+31.88 грн
100+22.16 грн
500+16.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+22.49 грн
2000+19.74 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 3543 шт:
термін постачання 21-31 дні (днів)
4+79.22 грн
10+47.36 грн
100+30.98 грн
500+22.46 грн
Мінімальне замовлення: 4
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DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
11+29.02 грн
16+19.56 грн
100+9.86 грн
500+7.55 грн
1000+5.60 грн
Мінімальне замовлення: 11
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DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
14+23.53 грн
22+14.28 грн
100+8.93 грн
500+6.19 грн
1000+5.49 грн
Мінімальне замовлення: 14
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ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
на замовлення 9755 шт:
термін постачання 21-31 дні (днів)
12+27.45 грн
14+22.66 грн
50+11.95 грн
100+8.31 грн
500+5.03 грн
1000+3.48 грн
5000+2.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
5+74.52 грн
10+63.37 грн
50+53.16 грн
100+43.17 грн
500+30.70 грн
1000+25.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
RSA12LAGTR RSA12LAGTR Rohm Semiconductor Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
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В кошику  од. на суму  грн.
PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
на замовлення 4105 шт:
термін постачання 21-31 дні (днів)
7+50.99 грн
10+36.41 грн
100+21.20 грн
1000+11.16 грн
2500+10.77 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
RGW00TS65HRC11 RGW00TS65HRC11 Rohm Semiconductor datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+479.26 грн
10+395.65 грн
450+290.90 грн
В кошику  од. на суму  грн.
RGWX5TS65HRC11 RGWX5TS65HRC11 Rohm Semiconductor datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 132A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
1+327.87 грн
10+209.15 грн
В кошику  од. на суму  грн.
RGW80TS65HRC11 RGW80TS65HRC11 Rohm Semiconductor datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
2+260.42 грн
10+164.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
UFZVTE-175.1B UFZVTE-175.1B Rohm Semiconductor datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 500MW 5.1V, SOD-323FL, SMALL AND
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: UMD2
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
11+30.59 грн
14+21.75 грн
100+12.33 грн
500+7.67 грн
1000+5.88 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BR24T64FVT-WE2 BR24T64FVT-WE2 Rohm Semiconductor datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 3594 шт:
термін постачання 21-31 дні (днів)
9+37.65 грн
10+34.59 грн
25+33.69 грн
50+30.96 грн
100+30.30 грн
250+29.41 грн
500+28.26 грн
1000+27.60 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ML9213GPZ03A-M Rohm Semiconductor Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
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В кошику  од. на суму  грн.
SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+1.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
34+9.41 грн
65+4.68 грн
98+3.11 грн
114+2.49 грн
500+1.78 грн
1000+1.57 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
25+12.55 грн
49+6.19 грн
73+4.14 грн
100+3.32 грн
500+2.38 грн
1000+2.09 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
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В кошику  од. на суму  грн.
LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
23+14.12 грн
44+7.02 грн
65+4.70 грн
100+3.76 грн
500+2.70 грн
1000+2.38 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
2SA1038STPR Rohm Semiconductor Description: TRANS GP BJT PNP 120V 0.05A 3-PI
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Supplier Device Package: SPT
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
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BA7615N-BZ Rohm Semiconductor Description: IC VIDEO SIGNAL SWITCHER 10SIP
Packaging: Tube
Package / Case: 10-SIP
Mounting Type: Through Hole
Function: Switch
Voltage - Supply: 4.5V ~ 13V
Applications: Consumer Video
Supplier Device Package: 10-SIP
Part Status: Obsolete
Control Interface: Logic
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R8008ANJFRGTL R8008ANJFRGTL Rohm Semiconductor datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 8A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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R8008ANJFRGTL R8008ANJFRGTL Rohm Semiconductor datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+427.49 грн
10+275.17 грн
100+197.95 грн
500+154.90 грн
В кошику  од. на суму  грн.
SFR10EZPF1200 SFR10EZPF1200 Rohm Semiconductor sfr-e.pdf Description: RES 120 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+1.85 грн
10000+1.61 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR10EZPF1200 SFR10EZPF1200 Rohm Semiconductor sfr-e.pdf Description: RES 120 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
на замовлення 14615 шт:
термін постачання 21-31 дні (днів)
24+13.33 грн
48+6.42 грн
70+4.32 грн
100+3.46 грн
500+2.48 грн
1000+2.19 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ESR01MZPF2201 ESR01MZPF2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
ESR01MZPF2201 ESR01MZPF2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
на замовлення 8686 шт:
термін постачання 21-31 дні (днів)
12+27.45 грн
14+22.66 грн
50+11.95 грн
100+8.31 грн
500+5.03 грн
1000+3.48 грн
5000+2.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BU9795AFV-LBE2 BU9795AFV-LBE2 Rohm Semiconductor datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BU9795AFV-LBE2 BU9795AFV-LBE2 Rohm Semiconductor datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Cut Tape (CT)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BU97501KV-E2 BU97501KV-E2 Rohm Semiconductor datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+106.04 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BU97501KV-E2 BU97501KV-E2 Rohm Semiconductor datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
на замовлення 1905 шт:
термін постачання 21-31 дні (днів)
2+200.80 грн
10+173.58 грн
25+164.12 грн
100+133.48 грн
250+126.63 грн
500+113.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SFR10EZPF4701 SFR10EZPF4701 Rohm Semiconductor sfr-e.pdf Description: RES 4.7 KOHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
SFR10EZPF4701 SFR10EZPF4701 Rohm Semiconductor sfr-e.pdf Description: RES 4.7 KOHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
24+13.33 грн
28+10.88 грн
53+5.76 грн
100+4.01 грн
500+2.42 грн
1000+1.68 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ML610Q174-440GAZWAAL Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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DTA114TE3TL DTA114TE3TL Rohm Semiconductor datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.67 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTA114TE3TL DTA114TE3TL Rohm Semiconductor datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
18+18.04 грн
28+10.88 грн
100+6.77 грн
500+4.67 грн
1000+4.13 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DTA114YE3TL DTA114YE3TL Rohm Semiconductor datasheet?p=DTA114YE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
DTA114YE3TL DTA114YE3TL Rohm Semiconductor datasheet?p=DTA114YE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
18+18.04 грн
28+10.80 грн
100+6.73 грн
500+4.65 грн
1000+4.11 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
R6030JNZC17 datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030JNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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R6077VNZC17 datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6077VNZC17
Виробник: Rohm Semiconductor
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 407 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+637.71 грн
30+362.29 грн
120+306.92 грн
В кошику  од. на суму  грн.
R6515KNZC17 datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.75 грн
30+160.21 грн
120+156.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6530KNZC17 datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+280.03 грн
30+220.89 грн
120+112.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6535ENZC17 datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+596.14 грн
30+335.95 грн
120+283.74 грн
В кошику  од. на суму  грн.
R6530ENZC17 datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530ENZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+280.03 грн
30+220.89 грн
120+215.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
R6524KNZC17 datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+499.66 грн
10+432.43 грн
100+354.31 грн
В кошику  од. на суму  грн.
SCT4036KEC11 datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEC11
Виробник: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4652 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+945.97 грн
30+779.94 грн
В кошику  од. на суму  грн.
SCT4026DEHRC11 datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEHRC11
Виробник: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1378.17 грн
30+1090.73 грн
120+954.72 грн
В кошику  од. на суму  грн.
SCT4036KEHRC11 datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEHRC11
Виробник: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Qualification: AEC-Q101
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1287.97 грн
10+1092.90 грн
В кошику  од. на суму  грн.
SCT4026DEC11 datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEC11
Виробник: Rohm Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 4843 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1317.77 грн
30+794.04 грн
В кошику  од. на суму  грн.
SCT4062KEHRC11 datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4062KEHRC11
Виробник: Rohm Semiconductor
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+869.10 грн
10+735.02 грн
В кошику  од. на суму  грн.
2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.22 грн
10+31.88 грн
100+22.16 грн
500+16.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+22.49 грн
2000+19.74 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 3543 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.22 грн
10+47.36 грн
100+30.98 грн
500+22.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.02 грн
16+19.56 грн
100+9.86 грн
500+7.55 грн
1000+5.60 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.53 грн
22+14.28 грн
100+8.93 грн
500+6.19 грн
1000+5.49 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Виробник: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
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ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Виробник: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
на замовлення 9755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.45 грн
14+22.66 грн
50+11.95 грн
100+8.31 грн
500+5.03 грн
1000+3.48 грн
5000+2.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Виробник: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
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LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Виробник: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.52 грн
10+63.37 грн
50+53.16 грн
100+43.17 грн
500+30.70 грн
1000+25.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
RSA12LAGTR
RSA12LAGTR
Виробник: Rohm Semiconductor
Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
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PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
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PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
на замовлення 4105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.99 грн
10+36.41 грн
100+21.20 грн
1000+11.16 грн
2500+10.77 грн
Мінімальне замовлення: 7
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PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
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PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Виробник: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
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RGW00TS65HRC11 datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65HRC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+479.26 грн
10+395.65 грн
450+290.90 грн
В кошику  од. на суму  грн.
RGWX5TS65HRC11 datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65HRC11
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 132A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+327.87 грн
10+209.15 грн
В кошику  од. на суму  грн.
RGW80TS65HRC11 datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65HRC11
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+260.42 грн
10+164.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
UFZVTE-175.1B datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UFZVTE-175.1B
Виробник: Rohm Semiconductor
Description: 500MW 5.1V, SOD-323FL, SMALL AND
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: UMD2
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.59 грн
14+21.75 грн
100+12.33 грн
500+7.67 грн
1000+5.88 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BR24T64FVT-WE2 datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T64FVT-WE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 3594 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.65 грн
10+34.59 грн
25+33.69 грн
50+30.96 грн
100+30.30 грн
250+29.41 грн
500+28.26 грн
1000+27.60 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ML9213GPZ03A-M
Виробник: Rohm Semiconductor
Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
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SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.41 грн
65+4.68 грн
98+3.11 грн
114+2.49 грн
500+1.78 грн
1000+1.57 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
товару немає в наявності
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SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.55 грн
49+6.19 грн
73+4.14 грн
100+3.32 грн
500+2.38 грн
1000+2.09 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Виробник: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
товару немає в наявності
В кошику  од. на суму  грн.
LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Виробник: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.12 грн
44+7.02 грн
65+4.70 грн
100+3.76 грн
500+2.70 грн
1000+2.38 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
2SA1038STPR
Виробник: Rohm Semiconductor
Description: TRANS GP BJT PNP 120V 0.05A 3-PI
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Supplier Device Package: SPT
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
товару немає в наявності
В кошику  од. на суму  грн.
BA7615N-BZ
Виробник: Rohm Semiconductor
Description: IC VIDEO SIGNAL SWITCHER 10SIP
Packaging: Tube
Package / Case: 10-SIP
Mounting Type: Through Hole
Function: Switch
Voltage - Supply: 4.5V ~ 13V
Applications: Consumer Video
Supplier Device Package: 10-SIP
Part Status: Obsolete
Control Interface: Logic
товару немає в наявності
В кошику  од. на суму  грн.
R8008ANJFRGTL datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJFRGTL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 8A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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R8008ANJFRGTL datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJFRGTL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+427.49 грн
10+275.17 грн
100+197.95 грн
500+154.90 грн
В кошику  од. на суму  грн.
SFR10EZPF1200 sfr-e.pdf
SFR10EZPF1200
Виробник: Rohm Semiconductor
Description: RES 120 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.85 грн
10000+1.61 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SFR10EZPF1200 sfr-e.pdf
SFR10EZPF1200
Виробник: Rohm Semiconductor
Description: RES 120 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
на замовлення 14615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.33 грн
48+6.42 грн
70+4.32 грн
100+3.46 грн
500+2.48 грн
1000+2.19 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ESR01MZPF2201 esr-e.pdf
ESR01MZPF2201
Виробник: Rohm Semiconductor
Description: RES 2.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
товару немає в наявності
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ESR01MZPF2201 esr-e.pdf
ESR01MZPF2201
Виробник: Rohm Semiconductor
Description: RES 2.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
на замовлення 8686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.45 грн
14+22.66 грн
50+11.95 грн
100+8.31 грн
500+5.03 грн
1000+3.48 грн
5000+2.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BU9795AFV-LBE2 datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9795AFV-LBE2
Виробник: Rohm Semiconductor
Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BU9795AFV-LBE2 datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9795AFV-LBE2
Виробник: Rohm Semiconductor
Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Cut Tape (CT)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BU97501KV-E2 datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BU97501KV-E2
Виробник: Rohm Semiconductor
Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+106.04 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BU97501KV-E2 datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BU97501KV-E2
Виробник: Rohm Semiconductor
Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
на замовлення 1905 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.80 грн
10+173.58 грн
25+164.12 грн
100+133.48 грн
250+126.63 грн
500+113.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SFR10EZPF4701 sfr-e.pdf
SFR10EZPF4701
Виробник: Rohm Semiconductor
Description: RES 4.7 KOHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
SFR10EZPF4701 sfr-e.pdf
SFR10EZPF4701
Виробник: Rohm Semiconductor
Description: RES 4.7 KOHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.33 грн
28+10.88 грн
53+5.76 грн
100+4.01 грн
500+2.42 грн
1000+1.68 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ML610Q174-440GAZWAAL ML610Q174_8-31-18.pdf
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
товару немає в наявності
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DTA114TE3TL datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA114TE3TL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.67 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTA114TE3TL datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA114TE3TL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.04 грн
28+10.88 грн
100+6.77 грн
500+4.67 грн
1000+4.13 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DTA114YE3TL datasheet?p=DTA114YE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA114YE3TL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
DTA114YE3TL datasheet?p=DTA114YE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA114YE3TL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.04 грн
28+10.80 грн
100+6.73 грн
500+4.65 грн
1000+4.11 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
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