Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102923) > Сторінка 945 з 1716
Фото | Назва | Виробник | Інформація |
Доступність |
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BR25H640FJ-5ACE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 3.5ms Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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BR24G1MFJ-5AE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24G1MFJ-5AE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 3043 шт: термін постачання 21-31 дні (днів) |
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BR25H320FJ-5ACE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: SPI DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25H320FJ-5ACE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: SPI DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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SMLA12BN8TT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Blue Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 36mcd Voltage - Forward (Vf) (Typ): 2.9V Lens Color: Colorless Current - Test: 5mA Height (Max): 0.62mm Wavelength - Dominant: 470nm (465nm ~ 475nm) Supplier Device Package: SMD Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMLA12BN8TT86 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Blue Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 36mcd Voltage - Forward (Vf) (Typ): 2.9V Lens Color: Colorless Current - Test: 5mA Height (Max): 0.62mm Wavelength - Dominant: 470nm (465nm ~ 475nm) Supplier Device Package: SMD Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
на замовлення 2839 шт: термін постачання 21-31 дні (днів) |
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SML-A12DTT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Orange Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 100mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 606nm Supplier Device Package: 1611(0605) Lens Transparency: Clear Part Status: Not For New Designs Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-A12DTT86 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Orange Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 100mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 606nm Supplier Device Package: 1611(0605) Lens Transparency: Clear Part Status: Not For New Designs Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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SMLA12BNTT86 | Rohm Semiconductor | Description: LED INDICATION SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BD25HC0MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD25HC0MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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BD25HA3MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD25HA3MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
на замовлення 239 шт: термін постачання 21-31 дні (днів) |
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PSR400ITQFC0L20 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 12W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: 3920 (1052 Metric) Temperature Coefficient: 75/ +175ppm/°C Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm) Composition: Metal Element Operating Temperature: -65°C ~ 175°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 3920 Height - Seated (Max): 0.081" (2.05mm) Part Status: Active Resistance: 200 µOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSR400ITQFC0L20 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 12W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: 3920 (1052 Metric) Temperature Coefficient: 75/ +175ppm/°C Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm) Composition: Metal Element Operating Temperature: -65°C ~ 175°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 3920 Height - Seated (Max): 0.081" (2.05mm) Part Status: Active Resistance: 200 µOhms |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF1470 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF1470 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ243 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 24 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ243 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 24 kOhms |
на замовлення 9870 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF13R0 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF13R0 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4701 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4701 | Rohm Semiconductor |
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на замовлення 9388 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD2741 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD2741 | Rohm Semiconductor |
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на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
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BAV70HMFHT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB411VAM-50TR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB411VAM-50TR | Rohm Semiconductor |
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на замовлення 2060 шт: термін постачання 21-31 дні (днів) |
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SML-D13UWT86A | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-D13UWT86A | Rohm Semiconductor |
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на замовлення 2985 шт: термін постачання 21-31 дні (днів) |
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RD3H160SPTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RD3H160SPTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
на замовлення 4976 шт: термін постачання 21-31 дні (днів) |
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R6030KNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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R6035KNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V Power Dissipation (Max): 379W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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RB095T-40NZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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RB095T-90 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR10EZPJ104 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 100 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ104 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 100 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF1003 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SDR10EZPF1003 | Rohm Semiconductor |
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на замовлення 4960 шт: термін постачання 21-31 дні (днів) |
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RB085BGE-30TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB085BGE-30TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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BD4958G-TR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD4958G-TR | Rohm Semiconductor |
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на замовлення 3852 шт: термін постачання 21-31 дні (днів) |
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RBQ10BM65AFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10BM65AFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
на замовлення 2474 шт: термін постачання 21-31 дні (днів) |
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RBQ10T45ANZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 45 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBQ10T65ANZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBQ10NS45ATL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10NS45ATL | Rohm Semiconductor |
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на замовлення 747 шт: термін постачання 21-31 дні (днів) |
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RBQ10NS65AFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10NS65AFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10NS65ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10NS65ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10NS45AFHTL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10NS45AFHTL | Rohm Semiconductor |
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на замовлення 772 шт: термін постачання 21-31 дні (днів) |
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R6015FNJTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6015FNX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSM300C12P3E201 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Power Dissipation (Max): 1360W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 80mA Supplier Device Package: Module Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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BR25H640FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 20MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT SPI 20MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.01 грн |
10+ | 57.75 грн |
25+ | 57.05 грн |
50+ | 53.23 грн |
100+ | 47.60 грн |
250+ | 47.20 грн |
BR24G1MFJ-5AE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BR24G1MFJ-5AE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 3043 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 127.99 грн |
10+ | 109.30 грн |
25+ | 104.18 грн |
50+ | 94.33 грн |
100+ | 91.00 грн |
250+ | 86.78 грн |
500+ | 82.34 грн |
1000+ | 79.42 грн |
BR25H320FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
BR25H320FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT SPI 20MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: SPI
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 49.10 грн |
10+ | 41.86 грн |
25+ | 39.94 грн |
50+ | 36.15 грн |
100+ | 34.88 грн |
250+ | 33.27 грн |
500+ | 31.57 грн |
1000+ | 30.45 грн |
SMLA12BN8TT86 |
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Виробник: Rohm Semiconductor
Description: LED BLUE CLEAR SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 36mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.62mm
Wavelength - Dominant: 470nm (465nm ~ 475nm)
Supplier Device Package: SMD
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED BLUE CLEAR SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 36mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.62mm
Wavelength - Dominant: 470nm (465nm ~ 475nm)
Supplier Device Package: SMD
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
товару немає в наявності
В кошику
од. на суму грн.
SMLA12BN8TT86 |
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Виробник: Rohm Semiconductor
Description: LED BLUE CLEAR SMD
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 36mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.62mm
Wavelength - Dominant: 470nm (465nm ~ 475nm)
Supplier Device Package: SMD
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED BLUE CLEAR SMD
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 36mcd
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.62mm
Wavelength - Dominant: 470nm (465nm ~ 475nm)
Supplier Device Package: SMD
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
на замовлення 2839 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.18 грн |
10+ | 41.55 грн |
100+ | 30.50 грн |
500+ | 24.01 грн |
1000+ | 22.49 грн |
SML-A12DTT86 |
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Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Orange
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 606nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Not For New Designs
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED ORANGE CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Orange
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 606nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Not For New Designs
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
товару немає в наявності
В кошику
од. на суму грн.
SML-A12DTT86 |
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Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Orange
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 606nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Not For New Designs
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED ORANGE CLEAR 1611 SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Orange
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 606nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Not For New Designs
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
на замовлення 330 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.66 грн |
12+ | 27.21 грн |
100+ | 18.00 грн |
SMLA12BNTT86 |
Виробник: Rohm Semiconductor
Description: LED INDICATION SMD
Description: LED INDICATION SMD
товару немає в наявності
В кошику
од. на суму грн.
BD25HC0MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 2.5V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
товару немає в наявності
В кошику
од. на суму грн.
BD25HC0MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 1A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 2.5V 1A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
на замовлення 104 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 167.43 грн |
10+ | 144.80 грн |
25+ | 136.61 грн |
100+ | 109.23 грн |
BD25HA3MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
товару немає в наявності
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од. на суму грн.
BD25HA3MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
на замовлення 239 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 136.04 грн |
10+ | 117.36 грн |
25+ | 110.72 грн |
100+ | 88.53 грн |
PSR400ITQFC0L20 |
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Виробник: Rohm Semiconductor
Description: RES 200 UOHM 1% 12W 3920
Packaging: Tape & Reel (TR)
Power (Watts): 12W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 3920 (1052 Metric)
Temperature Coefficient: 75/ +175ppm/°C
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 175°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 3920
Height - Seated (Max): 0.081" (2.05mm)
Part Status: Active
Resistance: 200 µOhms
Description: RES 200 UOHM 1% 12W 3920
Packaging: Tape & Reel (TR)
Power (Watts): 12W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 3920 (1052 Metric)
Temperature Coefficient: 75/ +175ppm/°C
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 175°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 3920
Height - Seated (Max): 0.081" (2.05mm)
Part Status: Active
Resistance: 200 µOhms
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В кошику
од. на суму грн.
PSR400ITQFC0L20 |
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Виробник: Rohm Semiconductor
Description: RES 200 UOHM 1% 12W 3920
Packaging: Cut Tape (CT)
Power (Watts): 12W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 3920 (1052 Metric)
Temperature Coefficient: 75/ +175ppm/°C
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 175°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 3920
Height - Seated (Max): 0.081" (2.05mm)
Part Status: Active
Resistance: 200 µOhms
Description: RES 200 UOHM 1% 12W 3920
Packaging: Cut Tape (CT)
Power (Watts): 12W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 3920 (1052 Metric)
Temperature Coefficient: 75/ +175ppm/°C
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 175°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 3920
Height - Seated (Max): 0.081" (2.05mm)
Part Status: Active
Resistance: 200 µOhms
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 184.34 грн |
10+ | 157.35 грн |
50+ | 137.36 грн |
100+ | 112.79 грн |
500+ | 80.56 грн |
1000+ | 69.82 грн |
SDR03EZPF1470 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.47 грн |
10000+ | 1.33 грн |
SDR03EZPF1470 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.88 грн |
30+ | 10.46 грн |
100+ | 4.07 грн |
1000+ | 1.60 грн |
2500+ | 1.47 грн |
SDR03EZPJ243 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 24 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 24 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 0.97 грн |
SDR03EZPJ243 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 24 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 24 kOhms
на замовлення 9870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 8.05 грн |
44+ | 7.13 грн |
81+ | 3.83 грн |
113+ | 2.58 грн |
500+ | 1.59 грн |
1000+ | 1.13 грн |
SDR03EZPF13R0 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.47 грн |
10000+ | 1.33 грн |
SDR03EZPF13R0 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.88 грн |
30+ | 10.46 грн |
100+ | 4.07 грн |
1000+ | 1.60 грн |
2500+ | 1.47 грн |
SDR03EZPD4701 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 2.21 грн |
SDR03EZPD4701 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9388 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.32 грн |
20+ | 15.66 грн |
100+ | 6.11 грн |
1000+ | 2.40 грн |
2500+ | 2.20 грн |
SDR03EZPD2741 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 2.21 грн |
SDR03EZPD2741 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.32 грн |
20+ | 15.66 грн |
100+ | 6.11 грн |
1000+ | 2.40 грн |
2500+ | 2.20 грн |
BAV70HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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од. на суму грн.
RB411VAM-50TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA TUMD2M
Description: DIODE SCHOTTKY 20V 500MA TUMD2M
товару немає в наявності
В кошику
од. на суму грн.
RB411VAM-50TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA TUMD2M
Description: DIODE SCHOTTKY 20V 500MA TUMD2M
на замовлення 2060 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.00 грн |
13+ | 25.50 грн |
100+ | 17.33 грн |
500+ | 12.20 грн |
1000+ | 9.15 грн |
SML-D13UWT86A |
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Виробник: Rohm Semiconductor
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
товару немає в наявності
В кошику
од. на суму грн.
SML-D13UWT86A |
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Виробник: Rohm Semiconductor
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 39.44 грн |
14+ | 23.64 грн |
100+ | 13.60 грн |
1000+ | 9.99 грн |
RD3H160SPTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 45V 16A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 58.57 грн |
RD3H160SPTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 4976 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 138.45 грн |
10+ | 118.83 грн |
100+ | 92.66 грн |
500+ | 71.84 грн |
1000+ | 56.71 грн |
R6030KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 672.94 грн |
30+ | 378.94 грн |
120+ | 319.88 грн |
510+ | 268.02 грн |
R6035KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 755.05 грн |
10+ | 657.09 грн |
100+ | 544.00 грн |
500+ | 444.56 грн |
RB095T-40NZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 6A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 6A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 141.67 грн |
50+ | 109.99 грн |
100+ | 90.50 грн |
500+ | 71.87 грн |
RB095T-90 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 3A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 3A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
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SDR10EZPJ104 |
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Виробник: Rohm Semiconductor
Description: RES 100K OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
Description: RES 100K OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 2.18 грн |
SDR10EZPJ104 |
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Виробник: Rohm Semiconductor
Description: RES 100K OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
Description: RES 100K OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.51 грн |
21+ | 15.35 грн |
100+ | 6.01 грн |
1000+ | 2.36 грн |
2500+ | 2.16 грн |
SDR10EZPF1003 |
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Виробник: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
Description: RES 100K OHM 1% 1/2W 0805
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SDR10EZPF1003 |
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Виробник: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
Description: RES 100K OHM 1% 1/2W 0805
на замовлення 4960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 22.54 грн |
17+ | 18.53 грн |
100+ | 7.24 грн |
1000+ | 2.84 грн |
2500+ | 2.61 грн |
RB085BGE-30TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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RB085BGE-30TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 150.53 грн |
10+ | 92.63 грн |
100+ | 62.68 грн |
500+ | 46.78 грн |
1000+ | 42.90 грн |
BD4958G-TR |
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Виробник: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
Description: IC RESET CMOS 5.8V 5SSOP
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BD4958G-TR |
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Виробник: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
Description: IC RESET CMOS 5.8V 5SSOP
на замовлення 3852 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 35.42 грн |
11+ | 29.30 грн |
25+ | 27.35 грн |
100+ | 20.53 грн |
250+ | 19.06 грн |
500+ | 16.13 грн |
1000+ | 12.26 грн |
RBQ10BM65AFHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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од. на суму грн.
RBQ10BM65AFHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
на замовлення 2474 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.42 грн |
10+ | 59.14 грн |
100+ | 46.09 грн |
500+ | 35.73 грн |
1000+ | 28.21 грн |
RBQ10T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 87.74 грн |
10+ | 74.88 грн |
100+ | 58.41 грн |
500+ | 45.28 грн |
1000+ | 35.74 грн |
RBQ10T65ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 132.01 грн |
50+ | 60.31 грн |
100+ | 53.83 грн |
500+ | 39.85 грн |
1000+ | 36.41 грн |
RBQ10NS45ATL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Description: SCHOTTKY BARRIER DIODE
товару немає в наявності
В кошику
од. на суму грн.
RBQ10NS45ATL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Description: SCHOTTKY BARRIER DIODE
на замовлення 747 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 85.33 грн |
10+ | 73.33 грн |
100+ | 57.21 грн |
500+ | 44.35 грн |
RBQ10NS65AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Qualification: AEC-Q101
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од. на суму грн.
RBQ10NS65AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Qualification: AEC-Q101
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RBQ10NS65ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
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RBQ10NS65ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
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RBQ10NS45AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
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RBQ10NS45AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
на замовлення 772 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.47 грн |
10+ | 65.58 грн |
100+ | 51.17 грн |
500+ | 39.67 грн |
R6015FNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Description: MOSFET N-CH 600V 15A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
R6015FNX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
BSM300C12P3E201 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 300A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 1360W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Supplier Device Package: Module
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Description: SICFET N-CH 1200V 300A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 1360W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Supplier Device Package: Module
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 56516.83 грн |