Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102920) > Сторінка 941 з 1716
Фото | Назва | Виробник | Інформація |
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R6515KNJTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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R6507KNJTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 200µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6507KNJTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 200µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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R6509ENJTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6509ENJTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ150 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ150 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ150 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ150 | Rohm Semiconductor |
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на замовлення 9790 шт: термін постачання 21-31 дні (днів) |
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MNR04MRAPJ150 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Resistance (Ohms): 15 Tolerance: ±5% Power Per Element: 62.5mW Circuit Type: Isolated Number of Pins: 8 Package / Case: 0804, Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C Height - Seated (Max): 0.020" (0.50mm) Number of Resistors: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB168VAM-30TR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB168VAM-30TR | Rohm Semiconductor |
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на замовлення 695 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ2R4 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 2.4 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ2R4 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 2.4 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ2R4 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ2R4 | Rohm Semiconductor |
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на замовлення 9900 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ2R4 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ2R4 | Rohm Semiconductor |
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на замовлення 9897 шт: термін постачання 21-31 дні (днів) |
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RBR20T60ANZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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RBQ10RSM65BTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10RSM65BTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V |
на замовлення 1476 шт: термін постачання 21-31 дні (днів) |
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RBQ10RSM65BTFTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ10RSM65BTFTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 3839 шт: термін постачання 21-31 дні (днів) |
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RBQ5RSM65BTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ5RSM65BTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
на замовлення 3967 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM65BTFTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM65BTFTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ5RSM65BTFTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ5RSM65BTFTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM65BTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ3RSM65BTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 90 µA @ 65 V |
на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
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DTC143EE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTC143EE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 2180 шт: термін постачання 21-31 дні (днів) |
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RB706F-40T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30mA Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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UMZ30NT106 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UMZ30NT106 | Rohm Semiconductor |
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на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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DA228UMTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DA228UMTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 80 V |
на замовлення 2575 шт: термін постачання 21-31 дні (днів) |
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DA204UMTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
на замовлення 2772 шт: термін постачання 21-31 дні (днів) |
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RB715UMTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30mA Supplier Device Package: UMD3F Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB715UMTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30mA Supplier Device Package: UMD3F Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 3988 шт: термін постачання 21-31 дні (днів) |
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RB717UMTL | Rohm Semiconductor |
Description: RB717UM IS SCHOTTKY BARRIER DIOD Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 30mA Supplier Device Package: UMD3F Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB717UMTL | Rohm Semiconductor |
Description: RB717UM IS SCHOTTKY BARRIER DIOD Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 30mA Supplier Device Package: UMD3F Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
на замовлення 2620 шт: термін постачання 21-31 дні (днів) |
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SCT4026DRC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V |
на замовлення 3468 шт: термін постачання 21-31 дні (днів) |
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SCT4036KRC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
на замовлення 4560 шт: термін постачання 21-31 дні (днів) |
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BD70H12G-2CTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 20µs Minimum Voltage - Threshold: 1.2V Supplier Device Package: 5-SSOP Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD70H12G-2CTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 20µs Minimum Voltage - Threshold: 1.2V Supplier Device Package: 5-SSOP Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2882 шт: термін постачання 21-31 дні (днів) |
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BD7004NUX-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD70HA3MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 7V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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BD70HA3MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 7V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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RCJ120N25TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RCJ050N25TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V Power Dissipation (Max): 1.56W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KTR10EZPF4991 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 4.99 kOhms |
на замовлення 10906 шт: термін постачання 21-31 дні (днів) |
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BR93G66NUX-3ATTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: VSON008X2030 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BR93G66NUX-3ATTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: VSON008X2030 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BM2PDB1Y-Z | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 40% Frequency - Switching: 25kHz Internal Switch(s): Yes Voltage - Breakdown: 730V Output Isolation: Non-Isolated Topology: Buck Voltage - Supply (Vcc/Vdd): 11.1V ~ 26V Supplier Device Package: 7-DIPK Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 9.3 V Control Features: Soft Start Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ADZT15R8.2B | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.44% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ADZT15R8.2B | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±2.44% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V |
на замовлення 14458 шт: термін постачання 21-31 дні (днів) |
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ADZT15R6.8B | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.54% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ADZT15R6.8B | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±2.54% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: DSN0603-2, SOD-962, SMD0603 Part Status: Active Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
на замовлення 11045 шт: термін постачання 21-31 дні (днів) |
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R6515KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 479.75 грн |
10+ | 310.06 грн |
R6507KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
R6507KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 317.96 грн |
10+ | 201.38 грн |
R6509ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
R6509ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 241.49 грн |
10+ | 195.03 грн |
SFR01MZPJ150 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10000+ | 0.85 грн |
SFR01MZPJ150 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 8.05 грн |
44+ | 7.05 грн |
116+ | 2.69 грн |
1000+ | 1.11 грн |
2500+ | 0.96 грн |
5000+ | 0.86 грн |
SFR03EZPJ150 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 0.95 грн |
SFR03EZPJ150 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9790 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 8.05 грн |
44+ | 7.05 грн |
116+ | 2.69 грн |
1000+ | 1.11 грн |
2500+ | 0.96 грн |
MNR04MRAPJ150 |
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Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 15 OHM 0804
Packaging: Cut Tape (CT)
Resistance (Ohms): 15
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 0804, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C
Height - Seated (Max): 0.020" (0.50mm)
Number of Resistors: 4
Description: RES ARRAY 4 RES 15 OHM 0804
Packaging: Cut Tape (CT)
Resistance (Ohms): 15
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 0804, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C
Height - Seated (Max): 0.020" (0.50mm)
Number of Resistors: 4
товару немає в наявності
В кошику
од. на суму грн.
RB168VAM-30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
товару немає в наявності
В кошику
од. на суму грн.
RB168VAM-30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
на замовлення 695 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.78 грн |
14+ | 22.94 грн |
100+ | 15.62 грн |
500+ | 10.99 грн |
SDR10EZPJ2R4 |
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Виробник: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 2.07 грн |
SDR10EZPJ2R4 |
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Виробник: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.71 грн |
22+ | 14.65 грн |
100+ | 5.72 грн |
1000+ | 2.25 грн |
2500+ | 2.06 грн |
SDR03EZPJ2R4 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 0.95 грн |
SDR03EZPJ2R4 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 8.05 грн |
44+ | 7.05 грн |
116+ | 2.69 грн |
1000+ | 1.11 грн |
2500+ | 0.96 грн |
SFR03EZPJ2R4 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 0.93 грн |
SFR03EZPJ2R4 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9897 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
45+ | 6.90 грн |
118+ | 2.63 грн |
1000+ | 1.09 грн |
2500+ | 0.94 грн |
RBR20T60ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 170.65 грн |
RBQ10RSM65BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
товару немає в наявності
В кошику
од. на суму грн.
RBQ10RSM65BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 125.57 грн |
10+ | 76.97 грн |
100+ | 51.62 грн |
500+ | 38.22 грн |
1000+ | 34.93 грн |
RBQ10RSM65BTFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
RBQ10RSM65BTFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
на замовлення 3839 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 136.04 грн |
10+ | 83.41 грн |
100+ | 56.17 грн |
500+ | 41.73 грн |
1000+ | 38.20 грн |
2000+ | 35.22 грн |
RBQ5RSM65BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
товару немає в наявності
В кошику
од. на суму грн.
RBQ5RSM65BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
на замовлення 3967 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 64.40 грн |
10+ | 51.24 грн |
100+ | 39.83 грн |
500+ | 31.68 грн |
1000+ | 25.80 грн |
2000+ | 24.29 грн |
RBQ3RSM65BTFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 32.26 грн |
RBQ3RSM65BTFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.08 грн |
10+ | 61.39 грн |
100+ | 47.79 грн |
500+ | 38.01 грн |
1000+ | 30.96 грн |
2000+ | 29.15 грн |
RBQ5RSM65BTFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 32.26 грн |
RBQ5RSM65BTFTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.08 грн |
10+ | 61.39 грн |
100+ | 47.79 грн |
500+ | 38.01 грн |
1000+ | 30.96 грн |
2000+ | 29.15 грн |
RBQ3RSM65BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
товару немає в наявності
В кошику
од. на суму грн.
RBQ3RSM65BTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 64.40 грн |
10+ | 51.24 грн |
100+ | 39.83 грн |
500+ | 31.68 грн |
1000+ | 25.80 грн |
2000+ | 24.29 грн |
DTC143EE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC143EE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 22.54 грн |
24+ | 13.25 грн |
100+ | 8.26 грн |
500+ | 5.73 грн |
1000+ | 5.07 грн |
RB706F-40T106 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ARR SCHOTT 40V 30MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.11 грн |
6000+ | 9.24 грн |
9000+ | 8.58 грн |
UMZ30NT106 |
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Виробник: Rohm Semiconductor
Description: ZENER ARRAYS FOR TERMINAL PROTEC
Description: ZENER ARRAYS FOR TERMINAL PROTEC
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UMZ30NT106 |
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Виробник: Rohm Semiconductor
Description: ZENER ARRAYS FOR TERMINAL PROTEC
Description: ZENER ARRAYS FOR TERMINAL PROTEC
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.66 грн |
10+ | 33.49 грн |
100+ | 22.78 грн |
500+ | 16.04 грн |
1000+ | 12.03 грн |
DA228UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
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DA228UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
на замовлення 2575 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.37 грн |
15+ | 20.85 грн |
100+ | 12.49 грн |
500+ | 10.85 грн |
1000+ | 7.38 грн |
DA204UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
на замовлення 2772 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.17 грн |
19+ | 16.74 грн |
100+ | 10.49 грн |
500+ | 7.32 грн |
1000+ | 6.50 грн |
RB715UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.40 грн |
RB715UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 3988 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.93 грн |
24+ | 13.33 грн |
100+ | 6.52 грн |
500+ | 5.11 грн |
1000+ | 3.55 грн |
RB717UMTL |
Виробник: Rohm Semiconductor
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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RB717UMTL |
Виробник: Rohm Semiconductor
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: RB717UM IS SCHOTTKY BARRIER DIOD
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.64 грн |
12+ | 26.59 грн |
100+ | 13.39 грн |
500+ | 11.14 грн |
1000+ | 8.67 грн |
SCT4026DRC15 |
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Виробник: Rohm Semiconductor
Description: 750V, 26M, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Description: 750V, 26M, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 3468 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1502.05 грн |
10+ | 1034.43 грн |
450+ | 810.88 грн |
SCT4036KRC15 |
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Виробник: Rohm Semiconductor
Description: 1200V, 36M, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Description: 1200V, 36M, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4560 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1441.68 грн |
10+ | 1241.55 грн |
450+ | 966.32 грн |
BD70H12G-2CTR |
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Виробник: Rohm Semiconductor
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 1.2V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 1.2V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
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BD70H12G-2CTR |
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Виробник: Rohm Semiconductor
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 1.2V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: NANO ENERGY, CMOS OUTPUT TYPE, S
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 1.2V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 115.11 грн |
10+ | 68.21 грн |
25+ | 56.99 грн |
100+ | 41.61 грн |
250+ | 35.76 грн |
500+ | 32.17 грн |
1000+ | 28.68 грн |
BD7004NUX-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ VSON008X2020
Description: IC REG LIN POS ADJ VSON008X2020
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BD70HA3MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: 300MA 7V, FIXED OUTPUT, HIGH-ACC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 7V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 300MA 7V, FIXED OUTPUT, HIGH-ACC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 7V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
250+ | 101.15 грн |
BD70HA3MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: 300MA 7V, FIXED OUTPUT, HIGH-ACC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 7V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 300MA 7V, FIXED OUTPUT, HIGH-ACC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 7V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 148.92 грн |
10+ | 129.06 грн |
25+ | 121.76 грн |
100+ | 97.35 грн |
RCJ120N25TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 12A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 250V 12A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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RCJ050N25TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 5A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 250V 5A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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KTR10EZPF4991 |
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Виробник: Rohm Semiconductor
Description: RES SMD 4.99K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
Description: RES SMD 4.99K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
на замовлення 10906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.49 грн |
44+ | 7.21 грн |
100+ | 4.20 грн |
1000+ | 2.64 грн |
2500+ | 2.34 грн |
BR93G66NUX-3ATTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 11.55 грн |
BR93G66NUX-3ATTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 40.25 грн |
10+ | 34.42 грн |
25+ | 32.87 грн |
50+ | 29.74 грн |
100+ | 28.69 грн |
250+ | 27.36 грн |
500+ | 25.96 грн |
1000+ | 25.04 грн |
BM2PDB1Y-Z |
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Виробник: Rohm Semiconductor
Description: NON-ISOLATED TYPE PWM DC/DC CONV
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 40%
Frequency - Switching: 25kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Non-Isolated
Topology: Buck
Voltage - Supply (Vcc/Vdd): 11.1V ~ 26V
Supplier Device Package: 7-DIPK
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 9.3 V
Control Features: Soft Start
Part Status: Active
Description: NON-ISOLATED TYPE PWM DC/DC CONV
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 40%
Frequency - Switching: 25kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Non-Isolated
Topology: Buck
Voltage - Supply (Vcc/Vdd): 11.1V ~ 26V
Supplier Device Package: 7-DIPK
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 9.3 V
Control Features: Soft Start
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 156.97 грн |
10+ | 96.58 грн |
50+ | 73.45 грн |
100+ | 62.05 грн |
250+ | 54.67 грн |
500+ | 50.16 грн |
1000+ | 45.64 грн |
ADZT15R8.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
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од. на суму грн.
ADZT15R8.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Description: DIODE ZENER 8.2V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.44%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
на замовлення 14458 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.34 грн |
24+ | 13.41 грн |
100+ | 8.37 грн |
500+ | 5.79 грн |
1000+ | 5.12 грн |
2000+ | 4.56 грн |
5000+ | 3.88 грн |
ADZT15R6.8B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Tape & Reel (TR)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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од. на суму грн.
ADZT15R6.8B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 100MW DSN0603-2
Packaging: Cut Tape (CT)
Tolerance: ±2.54%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: DSN0603-2, SOD-962, SMD0603
Part Status: Active
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
на замовлення 11045 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.10 грн |
33+ | 9.53 грн |
100+ | 3.64 грн |
500+ | 3.20 грн |
1000+ | 2.99 грн |
2000+ | 2.93 грн |
5000+ | 2.81 грн |