Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102292) > Сторінка 938 з 1705
Фото | Назва | Виробник | Інформація |
Доступність |
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BD9573MUF-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 3.6V Current - Supply: 500µA, 6mA Supplier Device Package: VQFN56FV8080 Part Status: Active Grade: Automotive |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BD9573MUF-ME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 3.6V Current - Supply: 500µA, 6mA Supplier Device Package: VQFN56FV8080 Part Status: Active Grade: Automotive |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BU97981MUV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Display Type: LCD, LED Mounting Type: Surface Mount Interface: 3-Wire Serial Configuration: 168 Segment Operating Temperature: -30°C ~ 75°C Voltage - Supply: 1.8V ~ 3.6V Supplier Device Package: VQFN56AV8080 Part Status: Active Current - Supply: 90 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LTR18EZPJSR082 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 1W Tolerance: ±5% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Part Status: Active Resistance: 82 mOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LTR18EZPJSR082 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 1W Tolerance: ±5% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Part Status: Active Resistance: 82 mOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BD77501G-TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 1.3mA Slew Rate: 10V/µs Gain Bandwidth Product: 8 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 4 mV Supplier Device Package: 5-SSOP Number of Circuits: 1 Current - Output / Channel: 1 mA Voltage - Supply Span (Min): 7 V Voltage - Supply Span (Max): 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA114YE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA114YE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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DTA114EE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA114EE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 2564 шт: термін постачання 21-31 дні (днів) |
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DTA114TE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA114TE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC123YE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123YE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 1413 шт: термін постачання 21-31 дні (днів) |
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DTC123JE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123JE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 2607 шт: термін постачання 21-31 дні (днів) |
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DTC123JCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC123JCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5797 шт: термін постачання 21-31 дні (днів) |
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DTC123EE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTC123EE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTC124XE3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTC124XE3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6700 шт: термін постачання 21-31 дні (днів) |
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BD7F105EFJ-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C Output Configuration: Positive, Isolation Capable Frequency - Switching: 363kHz Voltage - Input (Max): 42V Topology: Flyback Supplier Device Package: 8-HTSOP-J Synchronous Rectifier: No Voltage - Output (Max): 60V Voltage - Input (Min): 3.4V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BD7F105EFJ-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C Output Configuration: Positive, Isolation Capable Frequency - Switching: 363kHz Voltage - Input (Max): 42V Topology: Flyback Supplier Device Package: 8-HTSOP-J Synchronous Rectifier: No Voltage - Output (Max): 60V Voltage - Input (Min): 3.4V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5741 шт: термін постачання 21-31 дні (днів) |
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BM1P105FJ-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): No Voltage - Breakdown: 650V Output Isolation: Either Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.9V ~ 26V Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit Voltage - Start Up: 13.5 V Control Features: Soft Start Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BM1P105FJ-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): No Voltage - Breakdown: 650V Output Isolation: Either Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.9V ~ 26V Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit Voltage - Start Up: 13.5 V Control Features: Soft Start Part Status: Active |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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DAN202UMTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 11225 шт: термін постачання 21-31 дні (днів) |
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BD730L05G-CTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 3V PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.4V @ 50mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 15 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD730L05G-CTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 3V PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.4V @ 50mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 15 µA |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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RN771VFHTE-17 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN771VFHTE-17 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SLA560EN4T3F | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: Radial Color: Green Mounting Type: Through Hole Millicandela Rating: 3000mcd Voltage - Forward (Vf) (Typ): 3.2V Current - Test: 20mA Wavelength - Dominant: 523nm Part Status: Active Lens Style: Round with Domed Top Lens Size: 5.00mm Dia |
на замовлення 393 шт: термін постачання 21-31 дні (днів) |
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SLR343EN4T3F | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: Radial Color: Green Mounting Type: Through Hole Millicandela Rating: 2200mcd Voltage - Forward (Vf) (Typ): 3.2V Current - Test: 20mA Viewing Angle: 40° Height (Max): 5.60mm Wavelength - Dominant: 527nm Supplier Device Package: T-1 Part Status: Active Lens Style: Round with Domed Top Lens Size: 3.10mm Dia |
на замовлення 1241 шт: термін постачання 21-31 дні (днів) |
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SMLZ14WBECW1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-PLCC Color: White Size / Dimension: 3.20mm L x 2.80mm W Mounting Type: Surface Mount Millicandela Rating: 2000mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 3.2V Lens Color: White Current - Test: 20mA Height (Max): 2.05mm Supplier Device Package: 2-PLCC Lens Transparency: Diffused Part Status: Active Lens Style: Round with Flat Top Lens Size: 2.40mm Dia |
на замовлення 185 шт: термін постачання 21-31 дні (днів) |
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R6515ENJTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 4V @ 430µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6515ENJTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 4V @ 430µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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BD18GA5MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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BD18GA5MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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BD18GA3WEFJ-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -25°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 0.6 mA Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 0.9V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 900 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD18GA3MEFJ-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 600 µA Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD18GA5MEFJ-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 500mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ML610Q178-018GAZ0AAL | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: nX-U8/100 Data Converters: A/D 16x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 100-QFP (20x14) Part Status: Last Time Buy Number of I/O: 59 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML610Q172-018GAZWAAL | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 64-QFP (14x14) Part Status: Last Time Buy Number of I/O: 37 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML610Q178-018GAZ0AX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: nX-U8/100 Data Converters: A/D 16x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 100-QFP (20x14) Part Status: Last Time Buy Number of I/O: 59 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML610Q172-018GAZWAX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 64-QFP (14x14) Part Status: Last Time Buy Number of I/O: 37 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML610Q174-418GAZWAAL | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SDR03EZPJ910 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 91 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ910 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 91 Ohms |
на замовлення 9476 шт: термін постачання 21-31 дні (днів) |
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R6511ENXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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EMZ1T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz, 140MHz Supplier Device Package: EMT6 |
на замовлення 7682 шт: термін постачання 21-31 дні (днів) |
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RD3P200SNFRATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RD3P200SNFRATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 6911 шт: термін постачання 21-31 дні (днів) |
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RD3G400GNTL | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RD3G400GNTL | Rohm Semiconductor |
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на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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RQ3E100BNTB1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RQ3E100BNTB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
на замовлення 3340 шт: термін постачання 21-31 дні (днів) |
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RQ3E100MNTB1 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6006PND3FRATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6006PND3FRATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
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RFN20NS4STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 430 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 430 V |
товару немає в наявності |
В кошику од. на суму грн. |
BD9573MUF-ME2 |
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Виробник: Rohm Semiconductor
Description: POWER MANAGEMENT IC FOR AUTOMOTI
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 500µA, 6mA
Supplier Device Package: VQFN56FV8080
Part Status: Active
Grade: Automotive
Description: POWER MANAGEMENT IC FOR AUTOMOTI
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 500µA, 6mA
Supplier Device Package: VQFN56FV8080
Part Status: Active
Grade: Automotive
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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1000+ | 640.52 грн |
BD9573MUF-ME2 |
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Виробник: Rohm Semiconductor
Description: POWER MANAGEMENT IC FOR AUTOMOTI
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 500µA, 6mA
Supplier Device Package: VQFN56FV8080
Part Status: Active
Grade: Automotive
Description: POWER MANAGEMENT IC FOR AUTOMOTI
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 500µA, 6mA
Supplier Device Package: VQFN56FV8080
Part Status: Active
Grade: Automotive
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1200.88 грн |
10+ | 808.56 грн |
25+ | 717.93 грн |
100+ | 578.84 грн |
BU97981MUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC LCD DVR 42X4COM 3WIRE 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 168 Segment
Operating Temperature: -30°C ~ 75°C
Voltage - Supply: 1.8V ~ 3.6V
Supplier Device Package: VQFN56AV8080
Part Status: Active
Current - Supply: 90 µA
Description: IC LCD DVR 42X4COM 3WIRE 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 168 Segment
Operating Temperature: -30°C ~ 75°C
Voltage - Supply: 1.8V ~ 3.6V
Supplier Device Package: VQFN56AV8080
Part Status: Active
Current - Supply: 90 µA
товару немає в наявності
В кошику
од. на суму грн.
LTR18EZPJSR082 |
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Виробник: Rohm Semiconductor
Description: RES 0.082 OHM 5% 1W 0612
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 82 mOhms
Description: RES 0.082 OHM 5% 1W 0612
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 82 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 12.42 грн |
LTR18EZPJSR082 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.082 OHM 5% 1W 0612
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 82 mOhms
Description: RES 0.082 OHM 5% 1W 0612
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Part Status: Active
Resistance: 82 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 54.12 грн |
10+ | 38.70 грн |
100+ | 22.51 грн |
1000+ | 11.85 грн |
2500+ | 11.44 грн |
BD77501G-TR |
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Виробник: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.3mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 8 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 4 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 1 mA
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 15 V
Description: IC CMOS 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.3mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 8 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 4 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 1 mA
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 15 V
товару немає в наявності
В кошику
од. на суму грн.
DTA114YE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
DTA114YE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.26 грн |
20+ | 15.71 грн |
100+ | 9.85 грн |
500+ | 6.85 грн |
1000+ | 6.08 грн |
DTA114EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
DTA114EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 2564 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.06 грн |
20+ | 15.79 грн |
100+ | 9.90 грн |
500+ | 6.89 грн |
1000+ | 6.11 грн |
DTA114TE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.64 грн |
DTA114TE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.26 грн |
20+ | 15.71 грн |
100+ | 9.85 грн |
500+ | 6.85 грн |
1000+ | 6.08 грн |
DTC123YE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
DTC123YE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 1413 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.08 грн |
23+ | 13.49 грн |
100+ | 8.45 грн |
500+ | 5.85 грн |
1000+ | 5.18 грн |
DTC123JE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
DTC123JE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 2607 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.44 грн |
16+ | 19.69 грн |
100+ | 9.95 грн |
500+ | 7.62 грн |
1000+ | 5.65 грн |
DTC123JCAHZGT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.88 грн |
DTC123JCAHZGT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5797 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.49 грн |
25+ | 12.57 грн |
100+ | 7.82 грн |
500+ | 5.40 грн |
1000+ | 4.78 грн |
DTC123EE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.78 грн |
6000+ | 4.14 грн |
DTC123EE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.08 грн |
23+ | 13.49 грн |
100+ | 8.45 грн |
500+ | 5.85 грн |
1000+ | 5.18 грн |
DTC124XE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.24 грн |
6000+ | 5.44 грн |
DTC124XE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.65 грн |
18+ | 17.24 грн |
100+ | 10.84 грн |
500+ | 7.56 грн |
1000+ | 6.72 грн |
BD7F105EFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG FLYBACK ADJ 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 363kHz
Voltage - Input (Max): 42V
Topology: Flyback
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 60V
Voltage - Input (Min): 3.4V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG FLYBACK ADJ 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 363kHz
Voltage - Input (Max): 42V
Topology: Flyback
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 60V
Voltage - Input (Min): 3.4V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 126.90 грн |
5000+ | 118.69 грн |
BD7F105EFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG FLYBACK ADJ 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 363kHz
Voltage - Input (Max): 42V
Topology: Flyback
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 60V
Voltage - Input (Min): 3.4V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG FLYBACK ADJ 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 363kHz
Voltage - Input (Max): 42V
Topology: Flyback
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 60V
Voltage - Input (Min): 3.4V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5741 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 307.18 грн |
10+ | 201.55 грн |
100+ | 153.28 грн |
500+ | 125.97 грн |
1000+ | 120.46 грн |
BM1P105FJ-E2 |
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Виробник: Rohm Semiconductor
Description: PWM CONTROL IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 26V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
Description: PWM CONTROL IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 26V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
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BM1P105FJ-E2 |
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Виробник: Rohm Semiconductor
Description: PWM CONTROL IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 26V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
Description: PWM CONTROL IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 26V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 159.96 грн |
10+ | 98.40 грн |
25+ | 83.90 грн |
100+ | 63.44 грн |
250+ | 55.97 грн |
500+ | 51.41 грн |
1000+ | 46.84 грн |
DAN202UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 11225 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.51 грн |
30+ | 10.42 грн |
100+ | 6.49 грн |
500+ | 4.46 грн |
1000+ | 3.94 грн |
BD730L05G-CTR |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3V 50MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.4V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Description: IC REG LINEAR 3V 50MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.4V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
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од. на суму грн.
BD730L05G-CTR |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3V 50MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.4V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Description: IC REG LINEAR 3V 50MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.4V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 124.94 грн |
10+ | 74.10 грн |
25+ | 62.07 грн |
100+ | 45.46 грн |
250+ | 39.17 грн |
500+ | 35.30 грн |
1000+ | 31.54 грн |
RN771VFHTE-17 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Description: RF DIODE PIN 50V UMD2
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RN771VFHTE-17 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Description: RF DIODE PIN 50V UMD2
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од. на суму грн.
SLA560EN4T3F |
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Виробник: Rohm Semiconductor
Description: LED GREEN T/H
Packaging: Bulk
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 3000mcd
Voltage - Forward (Vf) (Typ): 3.2V
Current - Test: 20mA
Wavelength - Dominant: 523nm
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 5.00mm Dia
Description: LED GREEN T/H
Packaging: Bulk
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 3000mcd
Voltage - Forward (Vf) (Typ): 3.2V
Current - Test: 20mA
Wavelength - Dominant: 523nm
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 5.00mm Dia
на замовлення 393 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 146.43 грн |
10+ | 93.65 грн |
100+ | 72.05 грн |
SLR343EN4T3F |
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Виробник: Rohm Semiconductor
Description: LED GREEN T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 2200mcd
Voltage - Forward (Vf) (Typ): 3.2V
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.60mm
Wavelength - Dominant: 527nm
Supplier Device Package: T-1
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
Description: LED GREEN T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 2200mcd
Voltage - Forward (Vf) (Typ): 3.2V
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.60mm
Wavelength - Dominant: 527nm
Supplier Device Package: T-1
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
на замовлення 1241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 121.76 грн |
10+ | 82.92 грн |
100+ | 62.61 грн |
500+ | 50.31 грн |
1000+ | 47.55 грн |
SMLZ14WBECW1 |
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Виробник: Rohm Semiconductor
Description: LED WHITE DIFFUSED 2PLCC SMD
Packaging: Cut Tape (CT)
Package / Case: 2-PLCC
Color: White
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 2000mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.2V
Lens Color: White
Current - Test: 20mA
Height (Max): 2.05mm
Supplier Device Package: 2-PLCC
Lens Transparency: Diffused
Part Status: Active
Lens Style: Round with Flat Top
Lens Size: 2.40mm Dia
Description: LED WHITE DIFFUSED 2PLCC SMD
Packaging: Cut Tape (CT)
Package / Case: 2-PLCC
Color: White
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 2000mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.2V
Lens Color: White
Current - Test: 20mA
Height (Max): 2.05mm
Supplier Device Package: 2-PLCC
Lens Transparency: Diffused
Part Status: Active
Lens Style: Round with Flat Top
Lens Size: 2.40mm Dia
на замовлення 185 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 155.98 грн |
10+ | 108.05 грн |
100+ | 82.69 грн |
R6515ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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R6515ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 474.30 грн |
10+ | 306.53 грн |
100+ | 221.42 грн |
BD18GA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: 500MA 1.8V, FIXED OUTPUT, HIGH-A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 500MA 1.8V, FIXED OUTPUT, HIGH-A
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
250+ | 101.47 грн |
BD18GA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: 500MA 1.8V, FIXED OUTPUT, HIGH-A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 500MA 1.8V, FIXED OUTPUT, HIGH-A
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 262.62 грн |
10+ | 161.93 грн |
25+ | 138.03 грн |
100+ | 104.16 грн |
BD18GA3WEFJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.6 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 0.9V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 900 µA
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.6 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 0.9V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 900 µA
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BD18GA3MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 600 µA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 600 µA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Grade: Automotive
Qualification: AEC-Q100
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BD18GA5MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 500MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 1.8V 500MA 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Grade: Automotive
Qualification: AEC-Q100
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ML610Q178-018GAZ0AAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 100QFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 16x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 100-QFP (20x14)
Part Status: Last Time Buy
Number of I/O: 59
Description: IC MCU 8BIT 128KB FLASH 100QFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 16x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 100-QFP (20x14)
Part Status: Last Time Buy
Number of I/O: 59
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ML610Q172-018GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
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ML610Q178-018GAZ0AX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 100QFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 16x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 100-QFP (20x14)
Part Status: Last Time Buy
Number of I/O: 59
Description: IC MCU 8BIT 128KB FLASH 100QFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: nX-U8/100
Data Converters: A/D 16x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 100-QFP (20x14)
Part Status: Last Time Buy
Number of I/O: 59
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ML610Q172-018GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
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ML610Q174-418GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
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SDR03EZPJ910 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 1.12 грн |
SDR03EZPJ910 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 Ohms
на замовлення 9476 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
34+ | 9.55 грн |
73+ | 4.21 грн |
112+ | 2.76 грн |
132+ | 2.19 грн |
500+ | 1.55 грн |
1000+ | 1.35 грн |
R6511ENXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 11A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: 650V 11A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 232.38 грн |
50+ | 177.41 грн |
100+ | 152.06 грн |
EMZ1T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 0.15A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: EMT6
Description: TRANS NPN/PNP 50V 0.15A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: EMT6
на замовлення 7682 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.65 грн |
15+ | 21.23 грн |
100+ | 12.74 грн |
500+ | 11.07 грн |
1000+ | 7.53 грн |
2000+ | 6.93 грн |
RD3P200SNFRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 108.86 грн |
RD3P200SNFRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 6911 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 237.95 грн |
10+ | 205.76 грн |
100+ | 165.39 грн |
500+ | 127.52 грн |
1000+ | 105.66 грн |
RD3G400GNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 40V 40A TO252
Description: MOSFET N-CH 40V 40A TO252
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 46.81 грн |
5000+ | 43.90 грн |
RD3G400GNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 40V 40A TO252
Description: MOSFET N-CH 40V 40A TO252
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 110.62 грн |
10+ | 94.95 грн |
100+ | 74.05 грн |
500+ | 57.41 грн |
1000+ | 45.32 грн |
RQ3E100BNTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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од. на суму грн.
RQ3E100BNTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
на замовлення 3340 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 92.31 грн |
10+ | 62.61 грн |
100+ | 48.74 грн |
500+ | 36.40 грн |
1000+ | 33.22 грн |
RQ3E100MNTB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
Description: MOSFET N-CH 30V 10A HSMT8
товару немає в наявності
В кошику
од. на суму грн.
R6006PND3FRATL |
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Виробник: Rohm Semiconductor
Description: 600V 6A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: 600V 6A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
R6006PND3FRATL |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 6A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: 600V 6A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.84 грн |
10+ | 115.87 грн |
100+ | 92.21 грн |
500+ | 78.13 грн |
RFN20NS4STL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Description: DIODE STANDARD 430V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
товару немає в наявності
В кошику
од. на суму грн.