Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102915) > Сторінка 938 з 1716
Фото | Назва | Виробник | Інформація |
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RBQ5RSM10BTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V |
на замовлення 3809 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM10BTL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ3RSM10BTL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 2876 шт: термін постачання 21-31 дні (днів) |
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SML-D13WWT86A | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 112mcd Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 0603 Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-D13WWT86A | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 112mcd Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 0603 Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
на замовлення 2562 шт: термін постачання 21-31 дні (днів) |
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RGTH40TS65DGC13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 144 W |
на замовлення 585 шт: термін постачання 21-31 дні (днів) |
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BD18IA5MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.9V @ 500mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18IA5MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.9V @ 500mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 700 µA |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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BD18GC0MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18GC0MEFJ-LBH2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 1.2 mA |
на замовлення 229 шт: термін постачання 21-31 дні (днів) |
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BD18FD0WHFP-TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: HRP-5 (5 Leads + Tab) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 2A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 32V Number of Regulators: 1 Supplier Device Package: HRP-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 55dB (120Hz) Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18FD0WHFP-TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: HRP-5 (5 Leads + Tab) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 2A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 32V Number of Regulators: 1 Supplier Device Package: HRP-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 55dB (120Hz) Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 1931 шт: термін постачання 21-31 дні (днів) |
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BD18HC5MEFJ-ME2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD18HC5MEFJ-ME2 | Rohm Semiconductor |
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на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD18HA3MEFJ-ME2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
RB520S-40FHTE61 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RB520S-403TTE61 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RJ1L12CGNTLL | Rohm Semiconductor |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RJ1L12CGNTLL | Rohm Semiconductor |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS100AFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS100AFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RBQ30T45ANZC9 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Current - Reverse Leakage @ Vr: 450 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ30T45ANZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Current - Reverse Leakage @ Vr: 450 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCT3120AW7TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Supplier Device Package: TO-263-7 Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
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RBE2EA20ATR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBE2EA20ATR | Rohm Semiconductor |
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на замовлення 1952 шт: термін постачання 21-31 дні (днів) |
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RB551VM-40TE-17 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA Current - Reverse Leakage @ Vr: 300 µA @ 40 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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BR25G320FVM-3GTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25G320FVM-3GTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
на замовлення 2707 шт: термін постачання 21-31 дні (днів) |
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R6020KNZC17 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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R6020ENZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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R6020JNZC17 | Rohm Semiconductor |
![]() Packaging: Bag Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020ENZC17 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020FNJTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Power Dissipation (Max): 304W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020KNZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020JNZC8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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R6020ANZFL1C8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.15V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020ANZ8U7C8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.15V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
R6020ENZM12C8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RB095T-90NZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BD6346FV-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD6346FV-E2 | Rohm Semiconductor |
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на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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BD63441AFU-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD63441AFU-E2 | Rohm Semiconductor |
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на замовлення 4812 шт: термін постачання 21-31 дні (днів) |
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BD6345FV-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD8621EFV-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD868D0MUF-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4V ~ 18V Applications: Camera Supplier Device Package: VQFN20FV3535 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD868D0MUF-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4V ~ 18V Applications: Camera Supplier Device Package: VQFN20FV3535 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1950 шт: термін постачання 21-31 дні (днів) |
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BD86123AEFJ-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 550kHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: 8-HTSOP-J Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD8649EFV-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD8668GW-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-VFBGA, CSPBGA Number of Cells: 1 Mounting Type: Surface Mount Interface: USB Operating Temperature: -30°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 20-UCSP75M2 (2.2x2.2) Programmable Features: Current, Voltage Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit Voltage - Supply (Max): 5.5V Battery Pack Voltage: 8.4V Current - Charging: Constant - Programmable |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6511ENJTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6511ENJTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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R6511KNJTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 320µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6511KNJTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 320µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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R6511END3TL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6511END3TL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 3267 шт: термін постачання 21-31 дні (днів) |
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BZX84C33VLYFHT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±6.06% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RBQ5RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 3809 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 99.81 грн |
10+ | 65.96 грн |
100+ | 49.62 грн |
500+ | 36.66 грн |
1000+ | 33.47 грн |
2000+ | 30.79 грн |
RBQ3RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
RBQ3RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 2876 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.13 грн |
10+ | 56.59 грн |
100+ | 42.92 грн |
500+ | 31.52 грн |
1000+ | 28.70 грн |
2000+ | 26.33 грн |
SML-D13WWT86A |
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Виробник: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
товару немає в наявності
В кошику
од. на суму грн.
SML-D13WWT86A |
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Виробник: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
на замовлення 2562 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.66 грн |
14+ | 23.72 грн |
100+ | 15.25 грн |
500+ | 11.20 грн |
1000+ | 10.24 грн |
RGTH40TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
на замовлення 585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 304.27 грн |
10+ | 196.65 грн |
100+ | 164.57 грн |
BD18IA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
товару немає в наявності
В кошику
од. на суму грн.
BD18IA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 700 µA
на замовлення 222 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 191.58 грн |
10+ | 116.19 грн |
25+ | 98.23 грн |
100+ | 73.12 грн |
BD18GC0MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
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BD18GC0MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 1.2 mA
на замовлення 229 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 268.05 грн |
10+ | 164.95 грн |
25+ | 140.61 грн |
100+ | 106.14 грн |
BD18FD0WHFP-TR |
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Виробник: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Tape & Reel (TR)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Tape & Reel (TR)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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BD18FD0WHFP-TR |
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Виробник: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Cut Tape (CT)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Packaging: Cut Tape (CT)
Package / Case: HRP-5 (5 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 32V
Number of Regulators: 1
Supplier Device Package: HRP-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 1931 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 261.61 грн |
10+ | 160.45 грн |
25+ | 136.74 грн |
100+ | 103.10 грн |
250+ | 90.71 грн |
500+ | 83.09 грн |
1000+ | 75.46 грн |
BD18HC5MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
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BD18HC5MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 111.08 грн |
10+ | 95.81 грн |
25+ | 90.97 грн |
100+ | 70.13 грн |
250+ | 65.56 грн |
500+ | 57.93 грн |
1000+ | 44.99 грн |
BD18HA3MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
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RB520S-40FHTE61 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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RB520S-403TTE61 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Description: DIODE SCHOTTKY SMD
товару немає в наявності
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RJ1L12CGNTLL |
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Виробник: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
Description: NCH 60V 120A POWER MOSFET: RJ1L1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 257.02 грн |
RJ1L12CGNTLL |
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Виробник: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
Description: NCH 60V 120A POWER MOSFET: RJ1L1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 487.00 грн |
10+ | 420.75 грн |
100+ | 344.73 грн |
500+ | 275.40 грн |
RBQ30NS100AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 111.58 грн |
2000+ | 101.17 грн |
RBQ30NS100AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 215.73 грн |
10+ | 174.48 грн |
100+ | 141.16 грн |
500+ | 117.76 грн |
RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
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RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
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SCT3120AW7TL |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Description: SICFET N-CH 650V 21A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
товару немає в наявності
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TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 199.63 грн |
10+ | 120.77 грн |
25+ | 102.16 грн |
100+ | 76.18 грн |
250+ | 66.51 грн |
500+ | 60.56 грн |
1000+ | 54.66 грн |
RBE2EA20ATR |
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Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
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RBE2EA20ATR |
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Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
на замовлення 1952 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 49.91 грн |
10+ | 40.85 грн |
100+ | 30.46 грн |
500+ | 22.46 грн |
1000+ | 17.36 грн |
RB551VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.59 грн |
16+ | 20.46 грн |
100+ | 10.34 грн |
500+ | 7.92 грн |
1000+ | 5.87 грн |
BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 2707 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.05 грн |
10+ | 37.75 грн |
25+ | 36.77 грн |
50+ | 33.78 грн |
100+ | 33.05 грн |
250+ | 32.07 грн |
500+ | 30.82 грн |
1000+ | 30.09 грн |
R6020KNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 271.27 грн |
R6020ENZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 500.68 грн |
30+ | 275.31 грн |
120+ | 229.77 грн |
510+ | 184.32 грн |
R6020JNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 273.69 грн |
10+ | 212.16 грн |
R6020ENZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 433.87 грн |
30+ | 226.91 грн |
120+ | 211.07 грн |
R6020FNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 304W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: MOSFET N-CH 600V 20A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 304W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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R6020KNZ1C9 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
R6020JNZC8 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 649.60 грн |
10+ | 426.64 грн |
R6020ANZFL1C8 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
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од. на суму грн.
R6020ANZ8U7C8 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
R6020ENZM12C8 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
RB095T-90NZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.33 грн |
50+ | 117.19 грн |
100+ | 96.42 грн |
500+ | 76.57 грн |
1000+ | 64.97 грн |
BD6346FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
Description: IC MOTOR DRIVER 20SSOP
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BD6346FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
Description: IC MOTOR DRIVER 20SSOP
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 301.05 грн |
10+ | 260.29 грн |
25+ | 246.09 грн |
100+ | 200.16 грн |
250+ | 189.90 грн |
500+ | 170.39 грн |
1000+ | 141.35 грн |
BD63441AFU-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
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од. на суму грн.
BD63441AFU-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
на замовлення 4812 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 272.08 грн |
10+ | 234.87 грн |
25+ | 222.03 грн |
100+ | 180.59 грн |
250+ | 171.34 грн |
500+ | 153.74 грн |
1000+ | 127.53 грн |
BD6345FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
товару немає в наявності
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од. на суму грн.
BD8621EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG CTRLR TV 1OUT HTSSOP-B20
Description: IC REG CTRLR TV 1OUT HTSSOP-B20
товару немає в наявності
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од. на суму грн.
BD868D0MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
BD868D0MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 408.11 грн |
10+ | 256.81 грн |
25+ | 221.32 грн |
100+ | 170.00 грн |
250+ | 151.50 грн |
500+ | 140.12 грн |
1000+ | 131.86 грн |
BD86123AEFJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 550kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 550kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
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BD8649EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 20HTSSOP-B
Description: IC REG BUCK ADJ 3A 20HTSSOP-B
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BD8668GW-E2 |
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Виробник: Rohm Semiconductor
Description: IC BATT CHG LI-ION UCSP75M2
Packaging: Tape & Reel (TR)
Package / Case: 20-VFBGA, CSPBGA
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Programmable Features: Current, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Voltage - Supply (Max): 5.5V
Battery Pack Voltage: 8.4V
Current - Charging: Constant - Programmable
Description: IC BATT CHG LI-ION UCSP75M2
Packaging: Tape & Reel (TR)
Package / Case: 20-VFBGA, CSPBGA
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Programmable Features: Current, Voltage
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Voltage - Supply (Max): 5.5V
Battery Pack Voltage: 8.4V
Current - Charging: Constant - Programmable
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од. на суму грн.
R6511ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 326.81 грн |
10+ | 282.46 грн |
R6511KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товару немає в наявності
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од. на суму грн.
R6511KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 293.81 грн |
10+ | 237.74 грн |
R6511END3TL1 |
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Виробник: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 84.09 грн |
R6511END3TL1 |
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Виробник: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 3267 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 238.27 грн |
10+ | 163.63 грн |
100+ | 114.12 грн |
500+ | 87.25 грн |
1000+ | 80.87 грн |
BZX84C33VLYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 33V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.35 грн |