Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103508) > Сторінка 938 з 1726
| Фото | Назва | Виробник | Інформація |
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LTR100JZPJLR10 | Rohm Semiconductor |
Description: RES 0.1 OHM 5% 2W 1225Resistance: 100 mOhms Part Status: Active Height - Seated (Max): 0.028" (0.70mm) Supplier Device Package: 1225 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Temperature Coefficient: ±200ppm/°C Package / Case: Wide 2512 (6432 Metric), 1225 Features: Automotive AEC-Q200, Current Sense Tolerance: ±5% Power (Watts): 2W Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPJLR10 | Rohm Semiconductor |
Description: RES 0.1 OHM 5% 2W 1225Resistance: 100 mOhms Part Status: Active Height - Seated (Max): 0.028" (0.70mm) Supplier Device Package: 1225 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Temperature Coefficient: ±200ppm/°C Package / Case: Wide 2512 (6432 Metric), 1225 Features: Automotive AEC-Q200, Current Sense Tolerance: ±5% Power (Watts): 2W Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| ML610Q772-AA2TCZ07GL | Rohm Semiconductor |
Description: IC MCU 8BIT 32KB FLASH 32LQFP Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b SAR Core Processor: nX-U8/100 EEPROM Size: 2K x 16 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 4K x 8 Program Memory Size: 32KB (16K x 16) Speed: 17MHz Mounting Type: Surface Mount Package / Case: 32-LQFP Packaging: Bulk Number of I/O: 25 Part Status: Last Time Buy Supplier Device Package: 32-LQFP (7x7) Peripherals: Brown-out Detect/Reset, PWM, WDT Connectivity: I²C, SSP, UART/USART |
товару немає в наявності |
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BD1HDU50EFJ-CE2 | Rohm Semiconductor |
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-SPackaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C Output Configuration: High Side Rds On (Typ): 500mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.45A Ratio - Input:Output: 1:1 Supplier Device Package: 8-HTSOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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BD1HDU50EFJ-CE2 | Rohm Semiconductor |
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-SPackaging: Cut Tape (CT) Features: Latch Function, Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C Output Configuration: High Side Rds On (Typ): 500mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.45A Ratio - Input:Output: 1:1 Supplier Device Package: 8-HTSOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
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BD1HCU50EFJ-CE2 | Rohm Semiconductor |
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-SPackaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C Output Configuration: High Side Rds On (Typ): 500mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.45A Ratio - Input:Output: 1:1 Supplier Device Package: 8-HTSOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD1HCU50EFJ-CE2 | Rohm Semiconductor |
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-SPackaging: Cut Tape (CT) Features: Latch Function, Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C Output Configuration: High Side Rds On (Typ): 500mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.45A Ratio - Input:Output: 1:1 Supplier Device Package: 8-HTSOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2462 шт: термін постачання 21-31 дні (днів) |
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BV1HJ180EFJ-CE2 | Rohm Semiconductor |
Description: 1CH HIGH SIDE SWITCH WITH OUTPUTPackaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 180mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): 7V Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-HTSOP-J Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BV1HJ180EFJ-CE2 | Rohm Semiconductor |
Description: 1CH HIGH SIDE SWITCH WITH OUTPUTPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 180mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): 7V Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-HTSOP-J Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1747 шт: термін постачання 21-31 дні (днів) |
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RX3R05BBHC16 | Rohm Semiconductor |
Description: NCH 150V 50A, TO-220AB, POWER MOPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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BA4560RFVT-E2 | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C Current - Supply: 3mA Slew Rate: 4V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 50 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-TSSOP-B Part Status: Active Number of Circuits: 2 Voltage - Supply Span (Min): 8 V Voltage - Supply Span (Max): 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD49L53G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOPDigiKey Programmable: Not Verified Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 105°C (TA) Reset: Active Low Type: Voltage Detector Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Part Status: Not For New Designs Supplier Device Package: 3-SSOP Voltage - Threshold: 5.3V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SLA580EC4T3F | Rohm Semiconductor |
Description: LED BLUE-GREEN CLEAR T-1 3/4 T/HVoltage - Forward (Vf) (Typ): 3.2V Configuration: Standard Millicandela Rating: 4500mcd Mounting Type: Through Hole Color: Blue-Green Package / Case: Radial Packaging: Bulk Lens Size: 5mm, T-1 3/4 Lens Style: Round with Domed Top Part Status: Obsolete Lens Transparency: Clear Supplier Device Package: T-1 3/4 Wavelength - Dominant: 527nm Height (Max): 8.70mm Viewing Angle: 10° Current - Test: 20mA Lens Color: Colorless |
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LMR1701YG-CTR | Rohm Semiconductor |
Description: LMR SERIES, AUTOMOTIVE HIGH SPEEVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 200 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: 6-SSOP Voltage - Input Offset: 1 mV Current - Input Bias: 2.6 pA Gain Bandwidth Product: 150 MHz Slew Rate: 80V/µs Current - Supply: 9.6mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
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LMR1701YG-CTR | Rohm Semiconductor |
Description: LMR SERIES, AUTOMOTIVE HIGH SPEECurrent - Output / Channel: 200 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: 6-SSOP Voltage - Input Offset: 1 mV Current - Input Bias: 2.6 pA Gain Bandwidth Product: 150 MHz Slew Rate: 80V/µs Current - Supply: 9.6mA Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Push-Pull, Rail-to-Rail Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V |
на замовлення 2875 шт: термін постачання 21-31 дні (днів) |
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BR93G46FVJ-3BGTE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP Memory Organization: 64 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP-BJ Memory Format: EEPROM Clock Frequency: 3 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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BR93G46FVJ-3BGTE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP Memory Organization: 64 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP-BJ Memory Format: EEPROM Clock Frequency: 3 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
на замовлення 2498 шт: термін постачання 21-31 дні (днів) |
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BR93G46FV-3AGTE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPBMemory Organization: 64 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Part Status: Not For New Designs Supplier Device Package: 8-SSOP-B Memory Format: EEPROM Clock Frequency: 3 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-LSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR93G46FV-3AGTE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPBMemory Organization: 64 x 16 Memory Interface: Microwire Part Status: Not For New Designs Memory Format: EEPROM Clock Frequency: 3 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-LSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SSOP-B |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RX3P07CBHC16 | Rohm Semiconductor |
Description: NCH 100V 70A, TO-220AB, POWER MPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
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DTA144EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FResistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Tape & Reel (TR) |
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BR25H256FVT-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8TSSOPDigiKey Programmable: Not Verified Memory Organization: 32K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 3.5ms Part Status: Active Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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KDZVTFTR47A | Rohm Semiconductor |
Description: DIODE ZENER 47V 1W PMDUTolerance: ±6.38% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Supplier Device Package: PMDU Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 36 V |
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В кошику од. на суму грн. | ||||||||||||||||
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KDZVTFTR47A | Rohm Semiconductor |
Description: DIODE ZENER 47V 1W PMDUTolerance: ±6.38% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Supplier Device Package: PMDU Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 36 V |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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| ML610Q174-405GAZWAAL | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPNumber of I/O: 49 Part Status: Last Time Buy Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, POR, PWM, WDT Connectivity: I²C, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 12x10b Core Processor: nX-U8/100 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 128KB (64K x 16) Speed: 8.4MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Bulk |
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В кошику од. на суму грн. | |||||||||||||||||
| ML610Q174-404GAZWAAL | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPNumber of I/O: 49 Part Status: Last Time Buy Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, POR, PWM, WDT Connectivity: I²C, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 12x10b Core Processor: nX-U8/100 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 128KB (64K x 16) Speed: 8.4MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Bulk |
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В кошику од. на суму грн. | |||||||||||||||||
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RR274EA-400FHTR | Rohm Semiconductor |
Description: DIODE ARRAY GP 400V 500MA TSMD5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 500mA Supplier Device Package: TSMD5 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 1705 шт: термін постачання 21-31 дні (днів) |
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BD83A04EFV-ME2 | Rohm Semiconductor |
Description: IC LED DRV REG PWM 120MA HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Voltage - Output: 50V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 200kHz ~ 2.42MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C Current - Output / Channel: 120mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 24-HTSSOP-B Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 48V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
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В кошику од. на суму грн. | ||||||||||||||||
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BD83A04EFV-ME2 | Rohm Semiconductor |
Description: IC LED DRV REG PWM 120MA HTSSOPPackaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Voltage - Output: 50V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 200kHz ~ 2.42MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C Current - Output / Channel: 120mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 24-HTSSOP-B Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 48V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 252 шт: термін постачання 21-31 дні (днів) |
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RB078BM30SFHTL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252Current - Reverse Leakage @ Vr: 5 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
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RB078BM30SFHTL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 5A Qualification: AEC-Q101 Grade: Automotive |
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BD6047AGUL-E2 | Rohm Semiconductor |
Description: BD6047AGUL PROTECTS THE DEVICESPart Status: Active Supplier Device Package: VCSP50L1 Current - Supply: 40µA Applications: Overvoltage Protection Voltage - Supply: 2.2V ~ 28V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 9-UFBGA, CSPBGA Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||||||
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BD6047AGUL-E2 | Rohm Semiconductor |
Description: BD6047AGUL PROTECTS THE DEVICESPart Status: Active Supplier Device Package: VCSP50L1 Current - Supply: 40µA Applications: Overvoltage Protection Voltage - Supply: 2.2V ~ 28V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 9-UFBGA, CSPBGA Packaging: Cut Tape (CT) |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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DTC113ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84B20VLYFHT116 | Rohm Semiconductor |
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z Current - Reverse Leakage @ Vr: 100 nA @ 14 V Power - Max: 250 mW Part Status: Active Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84B20VLYFHT116 | Rohm Semiconductor |
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z Current - Reverse Leakage @ Vr: 100 nA @ 14 V Power - Max: 250 mW Part Status: Active Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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RBQ20T45ANZC9 | Rohm Semiconductor |
Description: RBQ20T45ANZ IS LOW IRPackaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Current - Reverse Leakage @ Vr: 140 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ20T45ANZC9 | Rohm Semiconductor |
Description: RBQ20T45ANZ IS LOW IRPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Current - Reverse Leakage @ Vr: 140 µA @ 45 V |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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RB058RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB058RSM10STL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB048RSM15STL1 | Rohm Semiconductor |
Description: 150V 8A, TO-277GE, ULTRA LOW IRCurrent - Reverse Leakage @ Vr: 3.7 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB048RSM15STL1 | Rohm Semiconductor |
Description: 150V 8A, TO-277GE, ULTRA LOW IRCurrent - Reverse Leakage @ Vr: 3.7 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RBQ15BM100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 15A TO-252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 140 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ15BM100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 15A TO-252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 140 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 3964 шт: термін постачання 21-31 дні (днів) |
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RB058RSM15STL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRCurrent - Reverse Leakage @ Vr: 2.1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB058RSM15STL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRCurrent - Reverse Leakage @ Vr: 2.1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RB078RSM15STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 5A TO277ACurrent - Reverse Leakage @ Vr: 2.1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB078RSM15STFTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 5A TO277ACurrent - Reverse Leakage @ Vr: 2.1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Supplier Device Package: TO-277A Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3864 шт: термін постачання 21-31 дні (днів) |
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RB058RSM15STFTL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRCurrent - Reverse Leakage @ Vr: 2.1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB058RSM15STFTL1 | Rohm Semiconductor |
Description: 150V 3A, TO-277GE, ULTRA LOW IRPackaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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RS6G100BGTB1 | Rohm Semiconductor |
Description: NCH 40V 100A, HSOP8, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS6G100BGTB1 | Rohm Semiconductor |
Description: NCH 40V 100A, HSOP8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V |
на замовлення 2163 шт: термін постачання 21-31 дні (днів) |
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RS6P060BHTB1 | Rohm Semiconductor |
Description: NCH 100V 60A, HSOP8, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS6P060BHTB1 | Rohm Semiconductor |
Description: NCH 100V 60A, HSOP8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V |
на замовлення 2142 шт: термін постачання 21-31 дні (днів) |
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| ML620Q156-614TBZWAX | Rohm Semiconductor |
Description: IC Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ML620Q156-614TBZWARL | Rohm Semiconductor |
Description: IC Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ML610Q174-400GAZWAAL | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPPackaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RD3G03BBGTL1 | Rohm Semiconductor |
Description: NCH 40V 65A, TO-252, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RD3G03BBGTL1 | Rohm Semiconductor |
Description: NCH 40V 65A, TO-252, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V |
на замовлення 2492 шт: термін постачання 21-31 дні (днів) |
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RD3L03BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 50A, TO-252, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| LTR100JZPJLR10 |
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Виробник: Rohm Semiconductor
Description: RES 0.1 OHM 5% 2W 1225
Resistance: 100 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
Description: RES 0.1 OHM 5% 2W 1225
Resistance: 100 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 24.80 грн |
| LTR100JZPJLR10 |
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Виробник: Rohm Semiconductor
Description: RES 0.1 OHM 5% 2W 1225
Resistance: 100 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Description: RES 0.1 OHM 5% 2W 1225
Resistance: 100 mOhms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±5%
Power (Watts): 2W
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.00 грн |
| 10+ | 59.96 грн |
| 50+ | 48.12 грн |
| 100+ | 39.20 грн |
| 500+ | 28.29 грн |
| 1000+ | 23.01 грн |
| ML610Q772-AA2TCZ07GL |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 32KB FLASH 32LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
Core Processor: nX-U8/100
EEPROM Size: 2K x 16
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (16K x 16)
Speed: 17MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Bulk
Number of I/O: 25
Part Status: Last Time Buy
Supplier Device Package: 32-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Description: IC MCU 8BIT 32KB FLASH 32LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
Core Processor: nX-U8/100
EEPROM Size: 2K x 16
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (16K x 16)
Speed: 17MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Bulk
Number of I/O: 25
Part Status: Last Time Buy
Supplier Device Package: 32-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, PWM, WDT
Connectivity: I²C, SSP, UART/USART
товару немає в наявності
В кошику
од. на суму грн.
| BD1HDU50EFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| BD1HDU50EFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.77 грн |
| 10+ | 64.22 грн |
| 25+ | 58.27 грн |
| 100+ | 48.46 грн |
| 250+ | 45.50 грн |
| 500+ | 43.72 грн |
| 1000+ | 41.55 грн |
| BD1HCU50EFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| BD1HCU50EFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: AUTOMOTIVE IPS SERIES 1CH HIGH-S
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.45A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.15 грн |
| 10+ | 65.75 грн |
| 25+ | 59.64 грн |
| 100+ | 49.61 грн |
| 250+ | 46.58 грн |
| 500+ | 44.75 грн |
| 1000+ | 42.54 грн |
| BV1HJ180EFJ-CE2 |
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Виробник: Rohm Semiconductor
Description: 1CH HIGH SIDE SWITCH WITH OUTPUT
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 180mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: 1CH HIGH SIDE SWITCH WITH OUTPUT
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 180mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
| BV1HJ180EFJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: 1CH HIGH SIDE SWITCH WITH OUTPUT
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 180mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: 1CH HIGH SIDE SWITCH WITH OUTPUT
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 180mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1747 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.46 грн |
| 10+ | 45.94 грн |
| 25+ | 41.41 грн |
| 100+ | 34.21 грн |
| 250+ | 31.99 грн |
| 500+ | 30.65 грн |
| 1000+ | 29.26 грн |
| RX3R05BBHC16 |
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Виробник: Rohm Semiconductor
Description: NCH 150V 50A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
Description: NCH 150V 50A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 327.54 грн |
| 10+ | 209.28 грн |
| 100+ | 148.94 грн |
| BA4560RFVT-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 3mA
Slew Rate: 4V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 3mA
Slew Rate: 4V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD49L53G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: 3-SSOP
Voltage - Threshold: 5.3V
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: 3-SSOP
Voltage - Threshold: 5.3V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.74 грн |
| SLA580EC4T3F |
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Виробник: Rohm Semiconductor
Description: LED BLUE-GREEN CLEAR T-1 3/4 T/H
Voltage - Forward (Vf) (Typ): 3.2V
Configuration: Standard
Millicandela Rating: 4500mcd
Mounting Type: Through Hole
Color: Blue-Green
Package / Case: Radial
Packaging: Bulk
Lens Size: 5mm, T-1 3/4
Lens Style: Round with Domed Top
Part Status: Obsolete
Lens Transparency: Clear
Supplier Device Package: T-1 3/4
Wavelength - Dominant: 527nm
Height (Max): 8.70mm
Viewing Angle: 10°
Current - Test: 20mA
Lens Color: Colorless
Description: LED BLUE-GREEN CLEAR T-1 3/4 T/H
Voltage - Forward (Vf) (Typ): 3.2V
Configuration: Standard
Millicandela Rating: 4500mcd
Mounting Type: Through Hole
Color: Blue-Green
Package / Case: Radial
Packaging: Bulk
Lens Size: 5mm, T-1 3/4
Lens Style: Round with Domed Top
Part Status: Obsolete
Lens Transparency: Clear
Supplier Device Package: T-1 3/4
Wavelength - Dominant: 527nm
Height (Max): 8.70mm
Viewing Angle: 10°
Current - Test: 20mA
Lens Color: Colorless
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| LMR1701YG-CTR |
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Виробник: Rohm Semiconductor
Description: LMR SERIES, AUTOMOTIVE HIGH SPEE
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 200 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 2.6 pA
Gain Bandwidth Product: 150 MHz
Slew Rate: 80V/µs
Current - Supply: 9.6mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: LMR SERIES, AUTOMOTIVE HIGH SPEE
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 200 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 2.6 pA
Gain Bandwidth Product: 150 MHz
Slew Rate: 80V/µs
Current - Supply: 9.6mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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| LMR1701YG-CTR |
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Виробник: Rohm Semiconductor
Description: LMR SERIES, AUTOMOTIVE HIGH SPEE
Current - Output / Channel: 200 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 2.6 pA
Gain Bandwidth Product: 150 MHz
Slew Rate: 80V/µs
Current - Supply: 9.6mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Description: LMR SERIES, AUTOMOTIVE HIGH SPEE
Current - Output / Channel: 200 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-SSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 2.6 pA
Gain Bandwidth Product: 150 MHz
Slew Rate: 80V/µs
Current - Supply: 9.6mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
на замовлення 2875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 225.48 грн |
| 10+ | 182.31 грн |
| 100+ | 147.51 грн |
| 500+ | 123.05 грн |
| 1000+ | 105.36 грн |
| BR93G46FVJ-3BGTE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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| BR93G46FVJ-3BGTE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
на замовлення 2498 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.26 грн |
| 10+ | 42.44 грн |
| 25+ | 41.90 грн |
| 50+ | 39.09 грн |
| 100+ | 34.96 грн |
| 250+ | 34.67 грн |
| 500+ | 33.59 грн |
| 1000+ | 32.39 грн |
| BR93G46FV-3AGTE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPB
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Not For New Designs
Supplier Device Package: 8-SSOP-B
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPB
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Not For New Designs
Supplier Device Package: 8-SSOP-B
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 35.63 грн |
| BR93G46FV-3AGTE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPB
Memory Organization: 64 x 16
Memory Interface: Microwire
Part Status: Not For New Designs
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SSOP-B
Description: IC EEPROM 1KBIT MICROWIRE 8SSOPB
Memory Organization: 64 x 16
Memory Interface: Microwire
Part Status: Not For New Designs
Memory Format: EEPROM
Clock Frequency: 3 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SSOP-B
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.80 грн |
| 10+ | 45.71 грн |
| 25+ | 43.58 грн |
| 50+ | 39.45 грн |
| 100+ | 38.06 грн |
| 250+ | 36.29 грн |
| 500+ | 34.44 грн |
| 1000+ | 33.22 грн |
| RX3P07CBHC16 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 70A, TO-220AB, POWER M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Description: NCH 100V 70A, TO-220AB, POWER M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 408.24 грн |
| 10+ | 263.38 грн |
| 100+ | 190.03 грн |
| 500+ | 148.98 грн |
| DTA144EUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
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| BR25H256FVT-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 256KBIT SPI 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 82.28 грн |
| 10+ | 72.00 грн |
| 25+ | 71.10 грн |
| 50+ | 66.31 грн |
| 100+ | 59.30 грн |
| 250+ | 58.80 грн |
| 500+ | 56.98 грн |
| 1000+ | 54.94 грн |
| KDZVTFTR47A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 47V 1W PMDU
Tolerance: ±6.38%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Description: DIODE ZENER 47V 1W PMDU
Tolerance: ±6.38%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
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| KDZVTFTR47A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 47V 1W PMDU
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Description: DIODE ZENER 47V 1W PMDU
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 12+ | 27.20 грн |
| 100+ | 20.35 грн |
| 500+ | 15.00 грн |
| 1000+ | 11.59 грн |
| ML610Q174-405GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
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| ML610Q174-404GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
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| RR274EA-400FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1705 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.29 грн |
| 10+ | 45.18 грн |
| 100+ | 32.34 грн |
| 500+ | 23.59 грн |
| 1000+ | 21.41 грн |
| BD83A04EFV-ME2 |
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Виробник: Rohm Semiconductor
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| BD83A04EFV-ME2 |
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Виробник: Rohm Semiconductor
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRV REG PWM 120MA HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 24-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 252 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 189.88 грн |
| 10+ | 136.45 грн |
| 25+ | 124.85 грн |
| 100+ | 105.22 грн |
| 250+ | 99.52 грн |
| RB078BM30SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 30V 5A TO252
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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| RB078BM30SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 30V 5A TO252
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Qualification: AEC-Q101
Grade: Automotive
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| BD6047AGUL-E2 |
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Виробник: Rohm Semiconductor
Description: BD6047AGUL PROTECTS THE DEVICES
Part Status: Active
Supplier Device Package: VCSP50L1
Current - Supply: 40µA
Applications: Overvoltage Protection
Voltage - Supply: 2.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Description: BD6047AGUL PROTECTS THE DEVICES
Part Status: Active
Supplier Device Package: VCSP50L1
Current - Supply: 40µA
Applications: Overvoltage Protection
Voltage - Supply: 2.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, CSPBGA
Packaging: Tape & Reel (TR)
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| BD6047AGUL-E2 |
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Виробник: Rohm Semiconductor
Description: BD6047AGUL PROTECTS THE DEVICES
Part Status: Active
Supplier Device Package: VCSP50L1
Current - Supply: 40µA
Applications: Overvoltage Protection
Voltage - Supply: 2.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, CSPBGA
Packaging: Cut Tape (CT)
Description: BD6047AGUL PROTECTS THE DEVICES
Part Status: Active
Supplier Device Package: VCSP50L1
Current - Supply: 40µA
Applications: Overvoltage Protection
Voltage - Supply: 2.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, CSPBGA
Packaging: Cut Tape (CT)
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.31 грн |
| 10+ | 146.51 грн |
| 25+ | 138.26 грн |
| 100+ | 110.53 грн |
| 250+ | 103.79 грн |
| 500+ | 90.81 грн |
| 1000+ | 74.01 грн |
| DTC113ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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| BZX84B20VLYFHT116 |
Виробник: Rohm Semiconductor
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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| BZX84B20VLYFHT116 |
Виробник: Rohm Semiconductor
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: 250MW, 20V, SOT-23, AUTOMOTIVE Z
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 15+ | 20.34 грн |
| 100+ | 10.27 грн |
| 500+ | 8.55 грн |
| 1000+ | 6.65 грн |
| RBQ20T45ANZC9 |
![]() |
Виробник: Rohm Semiconductor
Description: RBQ20T45ANZ IS LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Description: RBQ20T45ANZ IS LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
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| RBQ20T45ANZC9 |
![]() |
Виробник: Rohm Semiconductor
Description: RBQ20T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Description: RBQ20T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.76 грн |
| 10+ | 95.31 грн |
| 100+ | 74.29 грн |
| 500+ | 57.59 грн |
| RB058RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 32.54 грн |
| RB058RSM10STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.79 грн |
| 10+ | 75.73 грн |
| 100+ | 50.60 грн |
| 500+ | 37.38 грн |
| 1000+ | 34.12 грн |
| 2000+ | 31.39 грн |
| RB048RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 44.85 грн |
| RB048RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: 150V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.27 грн |
| 10+ | 87.54 грн |
| 100+ | 68.21 грн |
| 500+ | 52.88 грн |
| 1000+ | 41.74 грн |
| 2000+ | 40.53 грн |
| RBQ15BM100AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 15A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 100V 15A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| RBQ15BM100AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 15A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 100V 15A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 3964 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.76 грн |
| 10+ | 70.78 грн |
| 100+ | 68.65 грн |
| 500+ | 59.67 грн |
| RB058RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 17.14 грн |
| RB058RSM15STL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.67 грн |
| 10+ | 72.53 грн |
| 100+ | 48.52 грн |
| 500+ | 35.86 грн |
| 1000+ | 32.74 грн |
| 2000+ | 30.12 грн |
| RB078RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 5A TO277A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 150V 5A TO277A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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В кошику
од. на суму грн.
| RB078RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 5A TO277A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Supplier Device Package: TO-277A
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 150V 5A TO277A
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Supplier Device Package: TO-277A
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 106.81 грн |
| 10+ | 71.69 грн |
| 100+ | 54.45 грн |
| 500+ | 41.62 грн |
| 1000+ | 37.51 грн |
| RB058RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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В кошику
од. на суму грн.
| RB058RSM15STFTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Description: 150V 3A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.08 грн |
| 10+ | 83.12 грн |
| 100+ | 56.00 грн |
| 500+ | 41.63 грн |
| 1000+ | 38.11 грн |
| 2000+ | 35.15 грн |
| RS6G100BGTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
товару немає в наявності
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| RS6G100BGTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
на замовлення 2163 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.01 грн |
| 10+ | 110.39 грн |
| 100+ | 75.47 грн |
| 500+ | 56.79 грн |
| 1000+ | 52.42 грн |
| RS6P060BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
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В кошику
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| RS6P060BHTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
на замовлення 2142 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.99 грн |
| 10+ | 134.70 грн |
| 100+ | 93.06 грн |
| 500+ | 70.64 грн |
| 1000+ | 68.06 грн |
| ML610Q174-400GAZWAAL |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
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| RD3G03BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
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В кошику
од. на суму грн.
| RD3G03BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
Description: NCH 40V 65A, TO-252, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 20 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.79 грн |
| 10+ | 108.95 грн |
| 100+ | 87.58 грн |
| 500+ | 67.53 грн |
| 1000+ | 55.95 грн |
| RD3L03BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 50A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Description: NCH 60V 50A, TO-252, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
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