Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101745) > Сторінка 938 з 1696
| Фото | Назва | Виробник | Інформація |
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CSL0902DT1 | Rohm Semiconductor |
Description: LED ORANGE CLEAR 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Orange Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 560mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 605nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1807 шт: термін постачання 21-31 дні (днів) |
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RB068VWM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 60 V |
на замовлення 2352 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-30TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A Current - Reverse Leakage @ Vr: 600 nA @ 30 V |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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RB068VWM150TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 2938 шт: термін постачання 21-31 дні (днів) |
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RB068VWM100TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 4398 шт: термін постачання 21-31 дні (днів) |
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RB068VWM150TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 2564 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-40TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 40 V |
на замовлення 1513 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-60TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 60 V |
на замовлення 5402 шт: термін постачання 21-31 дні (днів) |
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RB068VWM-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 40 V |
на замовлення 5744 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.32mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
на замовлення 393 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 116 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.44mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65EGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 114A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 116 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.44mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
на замовлення 419 шт: термін постачання 21-31 дні (днів) |
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RB480Y-90FHT2R | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 90V 100MA EMD4Packaging: Tape & Reel (TR) Package / Case: SC-75-4, SOT-543 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD4 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 90 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB480KTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTTKY 40V UMD4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SML-D22YVWT86 | Rohm Semiconductor |
Description: 2-COLOR TYPE MINI-MOLD CHIP LED: |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SML-D22YVWT86 | Rohm Semiconductor |
Description: 2-COLOR TYPE MINI-MOLD CHIP LED: |
на замовлення 2825 шт: термін постачання 21-31 дні (днів) |
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RV5A040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RV5A040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A DFN1616-6Packaging: Cut Tape (CT) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
на замовлення 5995 шт: термін постачання 21-31 дні (днів) |
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YFZVFHTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 7.99V 500MW TUMD2MTolerance: ±2.57% Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.99 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: TUMD2M Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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YFZVFHTR8.2B | Rohm Semiconductor |
Description: DIODE ZENER 7.99V 500MW TUMD2MTolerance: ±2.57% Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.99 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: TUMD2M Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 5574 шт: термін постачання 21-31 дні (днів) |
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| RPI-574 | Rohm Semiconductor |
Description: SENSOR OPT SLOT PHOTOTRAN PCB MTPackaging: Bulk Package / Case: PCB Mount Sensing Distance: 0.197" (5mm) Sensing Method: Through-Beam Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C Output Configuration: Phototransistor Response Time: 10µs, 10µs Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 30 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RS3E075ATTB1 | Rohm Semiconductor |
Description: PCH -30V -7.5A MIDDLE POWER MOSF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS3E075ATTB1 | Rohm Semiconductor |
Description: PCH -30V -7.5A MIDDLE POWER MOSF |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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RH6P040BHTB1 | Rohm Semiconductor |
Description: NCH 100V 40A, HSMT8, POWER MOSFE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RH6P040BHTB1 | Rohm Semiconductor |
Description: NCH 100V 40A, HSMT8, POWER MOSFE |
на замовлення 5970 шт: термін постачання 21-31 дні (днів) |
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RD3L07BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 115A, TO-252, POWER MOSFPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RD3L07BBGTL1 | Rohm Semiconductor |
Description: NCH 60V 115A, TO-252, POWER MOSFPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF5103 | Rohm Semiconductor |
Description: RES 510K OHM 1% 1/2W 0805Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 510 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR10EZPF5103 | Rohm Semiconductor |
Description: RES 510K OHM 1% 1/2W 0805Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 510 kOhms |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
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R6507ENXC7G | Rohm Semiconductor |
Description: 650V 7A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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RV5C040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 4A DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RV5C040APTCR1 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 4A DFN1616-6Packaging: Cut Tape (CT) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1616-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V, 0V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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RSB6.8JS2T2R | Rohm Semiconductor |
Description: LOW CAPACITANCE ZENER DIODE : ROPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: EMD6 Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RSB6.8JS2T2R | Rohm Semiconductor |
Description: LOW CAPACITANCE ZENER DIODE : ROPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: EMD6 Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RSB6.8CST2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM VMN2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSB6.8CST2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM VMN2 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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RSB6.8JS2FHT2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: Automotive Capacitance @ Frequency: 1pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: EMD6 Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSB6.8JS2FHT2R | Rohm Semiconductor |
Description: TVS DIODE 3.5VWM EMD6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: Automotive Capacitance @ Frequency: 1pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: EMD6 Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 7970 шт: термін постачання 21-31 дні (днів) |
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RSB6.8ZSNXT2N | Rohm Semiconductor | Description: TVS DIODE 3.5VWM GMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RSB6.8SFHTE61 | Rohm Semiconductor | Description: DIODE ZENER SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BU90T82-ZE2 | Rohm Semiconductor |
Description: IC DRIVER 8/0 27BIT LVDS DUALPackaging: Tape & Reel (TR) Package / Case: 72-TFBGA Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.62V ~ 3.6V Number of Drivers/Receivers: 8/0 Data Rate: 1.218Gbps Protocol: LVDS Part Status: Active |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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BU90T82-ZE2 | Rohm Semiconductor |
Description: IC DRIVER 8/0 27BIT LVDS DUALPackaging: Cut Tape (CT) Package / Case: 72-TFBGA Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.62V ~ 3.6V Number of Drivers/Receivers: 8/0 Data Rate: 1.218Gbps Protocol: LVDS Part Status: Active |
на замовлення 6282 шт: термін постачання 21-31 дні (днів) |
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BD9757MWV-E2 | Rohm Semiconductor |
Description: IC REG DGTL CAM 8OUT 44UQFN Packaging: Tape & Reel (TR) Package / Case: 44-VFQFN Exposed Pad Voltage - Output: Multiple Mounting Type: Surface Mount Number of Outputs: 8 Voltage - Input: 24V Operating Temperature: -25°C ~ 85°C Applications: Converter, Digital Camera Supplier Device Package: UQFN044V6060 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MCR01MRTJ101 | Rohm Semiconductor |
Description: RES SMD 100 OHM 5% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Part Status: Discontinued at Digi-Key Resistance: 100 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD63521EFV-EVK-001 | Rohm Semiconductor |
Description: THIS EVALUATION BOARD IS A BOARDPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: BD63521 Supplied Contents: Board(s) Primary Attributes: 8V ~ 28V Supply Embedded: No Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BD2320UEFJ-LAE2 | Rohm Semiconductor |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 7.5V ~ 14.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 8-HTSOP-J Rise / Fall Time (Typ): 8ns, 6ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.5V Current - Peak Output (Source, Sink): 3.5A, 4.5A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD2320UEFJ-LAE2 | Rohm Semiconductor |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 7.5V ~ 14.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 8-HTSOP-J Rise / Fall Time (Typ): 8ns, 6ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.7V, 1.5V Current - Peak Output (Source, Sink): 3.5A, 4.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2172 шт: термін постачання 21-31 дні (днів) |
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LM2902FVJ-E2 | Rohm Semiconductor |
Description: GROUND SENSE OPERATIONAL AMPLIFIPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1mA Slew Rate: 0.3V/µs Gain Bandwidth Product: 800 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-TSSOP-BJ Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LM2902FVJ-E2 | Rohm Semiconductor |
Description: GROUND SENSE OPERATIONAL AMPLIFIPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1mA Slew Rate: 0.3V/µs Gain Bandwidth Product: 800 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-TSSOP-BJ Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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SH8MA4TB1 | Rohm Semiconductor |
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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SH8MA4TB1 | Rohm Semiconductor |
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A |
на замовлення 8960 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF3321 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF3321 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ475 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ475 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ1R8 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ1R8 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ244 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPower (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 240 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ244 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPower (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 240 kOhms |
на замовлення 9900 шт: термін постачання 21-31 дні (днів) |
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| CSL0902DT1 |
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Виробник: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.48 грн |
| 15+ | 22.02 грн |
| 100+ | 15.77 грн |
| 500+ | 12.15 грн |
| 1000+ | 11.28 грн |
| RB068VWM100TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.16 грн |
| 10+ | 34.05 грн |
| 100+ | 22.38 грн |
| 500+ | 16.00 грн |
| 1000+ | 14.38 грн |
| RB068VWM-60TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
на замовлення 2352 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.69 грн |
| 10+ | 38.85 грн |
| 100+ | 26.26 грн |
| 500+ | 18.88 грн |
| 1000+ | 17.03 грн |
| RB068VWM-30TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Description: DIODE SCHOTTKY 30V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.98 грн |
| 10+ | 35.70 грн |
| 100+ | 25.64 грн |
| 500+ | 18.43 грн |
| 1000+ | 16.61 грн |
| RB068VWM150TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.14 грн |
| 10+ | 39.16 грн |
| 100+ | 25.95 грн |
| 500+ | 18.66 грн |
| 1000+ | 16.82 грн |
| RB068VWM100TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 4398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.98 грн |
| 10+ | 35.70 грн |
| 100+ | 25.64 грн |
| 500+ | 18.43 грн |
| 1000+ | 16.61 грн |
| RB068VWM150TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 2564 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.79 грн |
| 10+ | 34.60 грн |
| 100+ | 22.69 грн |
| 500+ | 16.23 грн |
| 1000+ | 14.60 грн |
| RB068VWM-40TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
на замовлення 1513 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.14 грн |
| 10+ | 39.63 грн |
| 100+ | 25.64 грн |
| 500+ | 18.43 грн |
| 1000+ | 16.61 грн |
| RB068VWM-60TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
на замовлення 5402 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.61 грн |
| 10+ | 35.15 грн |
| 100+ | 22.98 грн |
| 500+ | 16.44 грн |
| 1000+ | 14.78 грн |
| RB068VWM-40TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
на замовлення 5744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.16 грн |
| 10+ | 33.89 грн |
| 100+ | 22.38 грн |
| 500+ | 16.00 грн |
| 1000+ | 14.38 грн |
| RGSX5TS65HRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 393 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 503.84 грн |
| 30+ | 312.55 грн |
| RGSX5TS65EHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 593.66 грн |
| 30+ | 456.16 грн |
| 120+ | 422.69 грн |
| RGSX5TS65EGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 419 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 384.62 грн |
| 30+ | 208.46 грн |
| 120+ | 172.73 грн |
| RB480Y-90FHT2R |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Qualification: AEC-Q101
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| RB480KTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 40V UMD4
Description: DIODE ARRAY SCHOTTKY 40V UMD4
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| SML-D22YVWT86 |
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Виробник: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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| SML-D22YVWT86 |
![]() |
Виробник: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.90 грн |
| 10+ | 34.21 грн |
| 100+ | 22.65 грн |
| 1000+ | 16.41 грн |
| RV5A040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.11 грн |
| RV5A040APTCR1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.11 грн |
| 10+ | 55.12 грн |
| 100+ | 37.07 грн |
| 500+ | 27.48 грн |
| 1000+ | 24.51 грн |
| YFZVFHTR8.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.99V 500MW TUMD2M
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.77 грн |
| YFZVFHTR8.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 7.99V 500MW TUMD2M
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
на замовлення 5574 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.11 грн |
| 16+ | 20.68 грн |
| 100+ | 13.08 грн |
| 500+ | 9.17 грн |
| 1000+ | 8.17 грн |
| RPI-574 |
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Виробник: Rohm Semiconductor
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Packaging: Bulk
Package / Case: PCB Mount
Sensing Distance: 0.197" (5mm)
Sensing Method: Through-Beam
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Packaging: Bulk
Package / Case: PCB Mount
Sensing Distance: 0.197" (5mm)
Sensing Method: Through-Beam
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
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од. на суму грн.
| RS3E075ATTB1 |
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Виробник: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Description: PCH -30V -7.5A MIDDLE POWER MOSF
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од. на суму грн.
| RS3E075ATTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Description: PCH -30V -7.5A MIDDLE POWER MOSF
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.38 грн |
| 10+ | 75.25 грн |
| 100+ | 58.69 грн |
| 500+ | 45.50 грн |
| 1000+ | 35.92 грн |
| RH6P040BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
Description: NCH 100V 40A, HSMT8, POWER MOSFE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 62.85 грн |
| RH6P040BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
Description: NCH 100V 40A, HSMT8, POWER MOSFE
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.19 грн |
| 10+ | 118.82 грн |
| 100+ | 95.49 грн |
| 500+ | 73.63 грн |
| 1000+ | 61.01 грн |
| RD3L07BBGTL1 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
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| RD3L07BBGTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.08 грн |
| 10+ | 207.44 грн |
| 100+ | 166.72 грн |
| 500+ | 128.55 грн |
| 1000+ | 106.51 грн |
| SDR10EZPF5103 |
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Виробник: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
Description: RES 510K OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
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од. на суму грн.
| SDR10EZPF5103 |
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Виробник: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
Description: RES 510K OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.78 грн |
| 34+ | 9.44 грн |
| 50+ | 6.50 грн |
| 100+ | 5.24 грн |
| 500+ | 3.85 грн |
| 1000+ | 3.41 грн |
| R6507ENXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.92 грн |
| 50+ | 82.10 грн |
| 100+ | 48.87 грн |
| RV5C040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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| RV5C040APTCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.19 грн |
| 10+ | 54.42 грн |
| 100+ | 38.86 грн |
| 500+ | 29.75 грн |
| 1000+ | 25.22 грн |
| RSB6.8JS2T2R |
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Виробник: Rohm Semiconductor
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 21.07 грн |
| RSB6.8JS2T2R |
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Виробник: Rohm Semiconductor
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.90 грн |
| 10+ | 46.00 грн |
| 100+ | 35.24 грн |
| 500+ | 26.15 грн |
| 1000+ | 20.92 грн |
| 2000+ | 19.04 грн |
| RSB6.8CST2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
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| RSB6.8CST2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.93 грн |
| 12+ | 27.99 грн |
| RSB6.8JS2FHT2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.5VWM EMD6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
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| RSB6.8JS2FHT2R |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.5VWM EMD6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 7970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 44.98 грн |
| 100+ | 33.56 грн |
| 500+ | 24.75 грн |
| 1000+ | 19.12 грн |
| 2000+ | 17.44 грн |
| RSB6.8ZSNXT2N |
Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Description: TVS DIODE 3.5VWM GMD2
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| RSB6.8SFHTE61 |
Виробник: Rohm Semiconductor
Description: DIODE ZENER SMD
Description: DIODE ZENER SMD
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| BU90T82-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Tape & Reel (TR)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Tape & Reel (TR)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 347.99 грн |
| BU90T82-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Cut Tape (CT)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Cut Tape (CT)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
на замовлення 6282 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 641.84 грн |
| 10+ | 479.60 грн |
| 25+ | 444.95 грн |
| 100+ | 381.88 грн |
| 250+ | 364.86 грн |
| 500+ | 354.60 грн |
| BD9757MWV-E2 |
Виробник: Rohm Semiconductor
Description: IC REG DGTL CAM 8OUT 44UQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 24V
Operating Temperature: -25°C ~ 85°C
Applications: Converter, Digital Camera
Supplier Device Package: UQFN044V6060
Description: IC REG DGTL CAM 8OUT 44UQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 24V
Operating Temperature: -25°C ~ 85°C
Applications: Converter, Digital Camera
Supplier Device Package: UQFN044V6060
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| MCR01MRTJ101 |
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Виробник: Rohm Semiconductor
Description: RES SMD 100 OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
Description: RES SMD 100 OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
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| BD63521EFV-EVK-001 |
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Виробник: Rohm Semiconductor
Description: THIS EVALUATION BOARD IS A BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: BD63521
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
Description: THIS EVALUATION BOARD IS A BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: BD63521
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11007.70 грн |
| BD2320UEFJ-LAE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
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| BD2320UEFJ-LAE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2172 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.51 грн |
| 10+ | 154.28 грн |
| 25+ | 131.38 грн |
| 100+ | 98.96 грн |
| 250+ | 87.01 грн |
| 500+ | 79.65 грн |
| 1000+ | 72.28 грн |
| LM2902FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.50 грн |
| LM2902FVJ-E2 |
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Виробник: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.31 грн |
| 10+ | 51.74 грн |
| 25+ | 46.68 грн |
| 100+ | 38.64 грн |
| 250+ | 36.18 грн |
| 500+ | 34.69 грн |
| 1000+ | 32.92 грн |
| SH8MA4TB1 |
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Виробник: Rohm Semiconductor
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.70 грн |
| 5000+ | 36.32 грн |
| SH8MA4TB1 |
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Виробник: Rohm Semiconductor
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
на замовлення 8960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.91 грн |
| 10+ | 80.52 грн |
| 100+ | 62.81 грн |
| 500+ | 48.69 грн |
| 1000+ | 38.44 грн |
| SFR03EZPF3321 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.21 грн |
| 10000+ | 1.05 грн |
| SFR03EZPF3321 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.80 грн |
| 36+ | 8.96 грн |
| 100+ | 3.44 грн |
| 1000+ | 1.42 грн |
| 2500+ | 1.23 грн |
| SFR03EZPJ475 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.94 грн |
| 10000+ | 0.81 грн |
| SFR03EZPJ475 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.00 грн |
| 118+ | 2.67 грн |
| 1000+ | 1.10 грн |
| 2500+ | 0.95 грн |
| SFR03EZPJ1R8 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.94 грн |
| 10000+ | 0.81 грн |
| SFR03EZPJ1R8 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.00 грн |
| 118+ | 2.67 грн |
| 1000+ | 1.10 грн |
| 2500+ | 0.95 грн |
| SFR03EZPJ244 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 240 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 240 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.16 грн |
| SFR03EZPJ244 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 240 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 240 kOhms
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.80 грн |
| 73+ | 4.32 грн |
| 110+ | 2.86 грн |
| 130+ | 2.27 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.40 грн |
























