Результат пошуку "rf730" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
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AUIRF7303Q | Infineon Technologies |
 Trans MOSFET N-CH Si 30V 5.3A Automotive 8-Pin SOIC T/R |
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AUIRF7303QTR | Infineon Technologies |
Trans MOSFET N-CH Si 30V 5.3A Automotive 8-Pin SOIC T/R |
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AUIRF7304Q | Infineon Technologies |
Trans MOSFET P-CH Si 20V 4.3A Automotive 8-Pin SOIC T/R |
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AUIRF7309Q | Infineon Technologies |
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R |
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AUIRF7309QTR | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced |
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| AUIRF7309QTR | Infineon Technologies |
Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R |
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AUIRF7309QTR | Infineon Technologies |
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R |
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IRF730 | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB |
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IRF730 | STMicroelectronics |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB Tube |
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IRF7301 | Infineon Technologies |
 Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
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IRF7301TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
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IRF7303 | Infineon Technologies |
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R |
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IRF7303QPBF | Infineon Technologies |
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC |
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IRF7303QTRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R |
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IRF7303TR | Infineon Technologies |
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R |
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IRF7303TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7303TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRF7303TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R |
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| IRF7303TRPBFXTMA1 | Infineon Technologies |
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC N T/R |
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IRF7303TRPBFXTMA1 | Infineon Technologies |
MOSFET PLANAR 40<-<100V |
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IRF7304 | Infineon Technologies |
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R |
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IRF7304QPBF | Infineon Technologies |
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC |
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IRF7304TRPBF | Infineon Technologies |
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R |
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IRF7304TRPBF | Infineon Technologies |
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R |
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IRF7306 | Infineon Technologies |
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R |
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IRF7306QPBF | Infineon Technologies |
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC |
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IRF7306QTRPBF | Infineon Technologies |
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R |
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IRF7306TRPBF | Infineon Technologies |
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R |
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IRF7306TRPBF | Infineon Technologies |
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R |
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IRF7307 | Infineon Technologies |
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R |
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IRF7307PBF | Infineon Technologies |
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC Tube |
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IRF7307QPBF | Infineon Technologies |
Trans MOSFET N/P-CH Si 20V 5.2A/4.3A 8-Pin SOIC |
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IRF7307TRPBF | Infineon Technologies |
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R |
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IRF7307TRPBF | Infineon Technologies |
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R |
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IRF7309 | Infineon Technologies |
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R |
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| IRF7309HR | IR - ASA only Supplier |
Trans MOSFET N/P-CH 30V 4A/3A T/R |
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IRF7309QPBF | Infineon Technologies |
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC |
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IRF7309QTRPBF | Infineon Technologies |
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRF730A | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB |
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| IRF730APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced |
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| IRF730APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRF730APBF | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB |
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| IRF730APBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced |
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| IRF730APBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IRF730APBF-BE3 | Vishay |
Surface Mount Fast Switching, Low Resistance Power MOSFET |
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| IRF730ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF730ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRF730ASPBF | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK |
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| IRF730ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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IRF730ASTRLPBF | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK T/R |
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IRF730ASTRRPBF | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK T/R |
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| IRF730BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 13A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 13A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
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| IRF730BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 13A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 13A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRF730BPBF | Vishay |
Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB |
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IRF730SPBF | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB |
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IRF730SPBF | Vishay Semiconductors |
MOSFET N-Chan 400V 5.5 Amp |
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| IRF730STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
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IRF730STRLPBF | Vishay |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB T/R |
товар відсутній |
| AUIRF7303Q |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 5.3A Automotive 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 5.3A Automotive 8-Pin SOIC T/R
товар відсутній
| AUIRF7303QTR |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 5.3A Automotive 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 5.3A Automotive 8-Pin SOIC T/R
товар відсутній
| AUIRF7304Q |
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Виробник: Infineon Technologies
Trans MOSFET P-CH Si 20V 4.3A Automotive 8-Pin SOIC T/R
Trans MOSFET P-CH Si 20V 4.3A Automotive 8-Pin SOIC T/R
товар відсутній
| AUIRF7309Q |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
товар відсутній
| AUIRF7309QTR |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
товар відсутній
| AUIRF7309QTR |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R
товар відсутній
| AUIRF7309QTR |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
товар відсутній
| IRF730 |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRF7301TRPBF | |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R
товар відсутній
| IRF7303QTRPBF |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
товар відсутній
| IRF7303TR |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
товар відсутній
| IRF7303TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7303TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| IRF7303TRPBF |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
товар відсутній
| IRF7303TRPBFXTMA1 |
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Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC N T/R
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC N T/R
товар відсутній
| IRF7304TRPBF | |
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Виробник: Infineon Technologies
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R
товар відсутній
| IRF7304TRPBF | |
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Виробник: Infineon Technologies
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R
Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R
товар відсутній
| IRF7306QTRPBF |
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Виробник: Infineon Technologies
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R
товар відсутній
| IRF7306TRPBF | |
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Виробник: Infineon Technologies
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R
товар відсутній
| IRF7306TRPBF | |
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Виробник: Infineon Technologies
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R
Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R
товар відсутній
| IRF7307 | |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R
товар відсутній
| IRF7307PBF | |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC Tube
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC Tube
товар відсутній
| IRF7307QPBF | |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 20V 5.2A/4.3A 8-Pin SOIC
Trans MOSFET N/P-CH Si 20V 5.2A/4.3A 8-Pin SOIC
товар відсутній
| IRF7307TRPBF | |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R
товар відсутній
| IRF7307TRPBF | |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 20V 5.7A/4.7A 8-Pin SOIC T/R
товар відсутній
| IRF7309QPBF |
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Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC
товар відсутній
| IRF7309QTRPBF |
|
Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R
товар відсутній
| IRF7309TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7309TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRF730APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF730APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRF730APBF-BE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF730APBF-BE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRF730APBF-BE3 |
|
Виробник: Vishay
Surface Mount Fast Switching, Low Resistance Power MOSFET
Surface Mount Fast Switching, Low Resistance Power MOSFET
товар відсутній
| IRF730ASPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF730ASPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRF730ASTRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF730BPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 13A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 13A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 13A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 13A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF730BPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 13A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 13A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 13A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 13A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRF730STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній