Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162633) > Сторінка 395 з 2711
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STGIPS10C60T-H | STMicroelectronics |
Description: MOD IPM SLLIMM 3PHASE 25SDIPPackaging: Tube Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
товару немає в наявності |
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STGW30H60DLFB | STMicroelectronics |
Description: IGBT HB 600V 30A HS TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/146ns Switching Energy: 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товару немає в наявності |
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STGWA15H120F2 | STMicroelectronics |
Description: IGBT HB 1200V 15A HS TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/111ns Switching Energy: 380µJ (on), 370µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 67 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 259 W |
товару немає в наявності |
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STGWA25H120DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 1200V 50A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 303 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 29ns/130ns Switching Energy: 600µJ (on), 700µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 375 W |
на замовлення 392 шт: термін постачання 21-31 дні (днів) |
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STGWA25H120F2 | STMicroelectronics |
Description: IGBT HB 1200V 25A HS TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 29ns/130ns Switching Energy: 600µJ (on), 700µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 375 W |
товару немає в наявності |
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STI18N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V |
товару немає в наявності |
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STI40N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 32A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP100N8F6 | STMicroelectronics |
Description: MOSFET N-CH 80V 100A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V |
на замовлення 23958 шт: термін постачання 21-31 дні (днів) |
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STP13N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 10A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP160N4LF6 | STMicroelectronics |
Description: MOSFET N-CH 40V 120A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP18N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V |
на замовлення 999 шт: термін постачання 21-31 дні (днів) |
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STP265N6F6AG | STMicroelectronics |
Description: MOSFET N-CH 60V 180A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP33N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 24A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V |
на замовлення 284 шт: термін постачання 21-31 дні (днів) |
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STP40N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 32A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS20SM120SFP | STMicroelectronics |
Description: DIODE SCHOTT 120V 20A TO220FPABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-220FPAB Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A Current - Reverse Leakage @ Vr: 210 µA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS20SM120ST | STMicroelectronics |
Description: DIODE SCHOTTKY 120V 20A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-220 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A Current - Reverse Leakage @ Vr: 210 µA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS30SM120SFP | STMicroelectronics |
Description: DIODE SCHOTTK 120V 30A TO220FPABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-220FPAB Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A Current - Reverse Leakage @ Vr: 275 µA @ 120 V |
на замовлення 531 шт: термін постачання 21-31 дні (днів) |
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STPS41H100CTY | STMicroelectronics |
Description: DIODE ARR SCHOTT 100V 20A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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STPSC20H065CTY | STMicroelectronics |
Description: DIODE SCHOTTKY SIC 650V TO220AB |
на замовлення 362 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STTH15S12D | STMicroelectronics |
Description: DIODE STANDARD 1200V 15A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 33281 шт: термін постачання 21-31 дні (днів) |
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STTH15S12W | STMicroelectronics |
Description: DIODE STANDARD 1200V 15A DO247Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STTH30S12W | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 30A DO247Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STTH31AC06SWL | STMicroelectronics |
Description: DIODE GEN PURP 600V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 155 шт: термін постачання 21-31 дні (днів) |
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STTH60AC06CWL | STMicroelectronics |
Description: DIODE ARRAY GP 600V 30A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STTH75S12W | STMicroelectronics |
Description: DIODE STANDARD 1200V 75A DO247Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 685 шт: термін постачання 21-31 дні (днів) |
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STTH8S12D | STMicroelectronics |
Description: DIODE STANDARD 1200V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 588 шт: термін постачання 21-31 дні (днів) |
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STU13N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 10A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW28N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
на замовлення 845 шт: термін постачання 21-31 дні (днів) |
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STW40N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 32A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V |
на замовлення 597 шт: термін постачання 21-31 дні (днів) |
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STW56N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 52A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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STW56N60M2-4 | STMicroelectronics |
Description: MOSFET N-CH 600V 52A TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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STW56N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 49A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V Power Dissipation (Max): 358W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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LDFMPUR | STMicroelectronics |
Description: IC REG LIN POS ADJ 500MA 6-DFNPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3) Voltage - Output (Max): 12V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good PSRR: 62dB ~ 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 9030 шт: термін постачання 21-31 дні (днів) |
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LDFMPVR | STMicroelectronics |
Description: IC REG LIN POS ADJ 500MA 6-DFNPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2) Voltage - Output (Max): 12V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good PSRR: 62dB ~ 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 2605 шт: термін постачання 21-31 дні (днів) |
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STM32746G-EVAL2 | STMicroelectronics |
Description: STM32 F7 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M7 Utilized IC / Part: STM32 F7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32756G-EVAL2 | STMicroelectronics |
Description: STM32 F7 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M7 Board Type: Evaluation Platform Utilized IC / Part: STM32 F7 Part Status: Not For New Designs |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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M95M02-DWMN3TP/K | STMicroelectronics |
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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M95M02-DWMN3TP/K | STMicroelectronics |
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12895 шт: термін постачання 21-31 дні (днів) |
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LF247DT | STMicroelectronics |
Description: IC OPAMP JFET 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: J-FET Operating Temperature: -40°C ~ 105°C Current - Supply: 1.4mA (x4 Channels) Slew Rate: 16V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 20 pA Voltage - Input Offset: 3 mV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 44 V Voltage - Supply Span (Max): 44 V |
на замовлення 14448 шт: термін постачання 21-31 дні (днів) |
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LM124DT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -55°C ~ 125°C Current - Supply: 1.5mA Slew Rate: 0.4V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 30 V |
на замовлення 2110 шт: термін постачання 21-31 дні (днів) |
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LM201ADT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C Current - Supply: 1.8mA Slew Rate: 0.5V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 25 nA Voltage - Input Offset: 700 µV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 44 V |
на замовлення 4759 шт: термін постачання 21-31 дні (днів) |
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LM239APT | STMicroelectronics |
Description: IC COMPARATOR 4 GEN PUR 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C Voltage - Supply, Single/Dual (±): 2V ~ 32V, ±1V ~ 16V Supplier Device Package: 14-TSSOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 2mV @ 30V Current - Input Bias (Max): 0.1µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 5448 шт: термін постачання 21-31 дні (днів) |
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ST8034HNQR | STMicroelectronics |
Description: IC INTERFACE SPECIALIZED 24QFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 3V, 5V Applications: Smart Card Supplier Device Package: 24-QFN (4x4) |
на замовлення 2703 шт: термін постачання 21-31 дні (днів) |
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TS272AIDT | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1mA (x2 Channels) Slew Rate: 5.5V/µs Gain Bandwidth Product: 3.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 900 µV Supplier Device Package: 8-SO Part Status: Active Number of Circuits: 2 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TS272CDT | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: 0°C ~ 70°C Current - Supply: 1mA (x2 Channels) Slew Rate: 5.5V/µs Gain Bandwidth Product: 3.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1.1 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 16 V |
на замовлення 3263 шт: термін постачання 21-31 дні (днів) |
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TS274AIDT | STMicroelectronics |
Description: IC CMOS 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1mA Slew Rate: 5.5V/µs Gain Bandwidth Product: 3.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 900 µV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 45 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 16 V |
на замовлення 2212 шт: термін постачання 21-31 дні (днів) |
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TS3702IPT | STMicroelectronics |
Description: IC COMPARATOR 2 GEN PUR 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: CMOS, Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.7V ~ 16V, ±1.35V ~ 8V Supplier Device Package: 8-TSSOP Current - Quiescent (Max): 25µA Voltage - Input Offset (Max): 5mV @ 10V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 20mA CMRR, PSRR (Typ): 82dB CMRR Part Status: Active |
на замовлення 796 шт: термін постачання 21-31 дні (днів) |
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TS924AIDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1mA Slew Rate: 1.3V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 15 nA Voltage - Input Offset: 900 µV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 12 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4659 шт: термін постачання 21-31 дні (днів) |
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TS931BILT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Supply: 20µA Slew Rate: 0.05V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 5 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 10 V |
на замовлення 13483 шт: термін постачання 21-31 дні (днів) |
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TS932IDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C Current - Supply: 20µA (x2 Channels) Slew Rate: 0.05V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 10 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 5 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 10 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6129 шт: термін постачання 21-31 дні (днів) |
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TS934IDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C Current - Supply: 20µA (x4 Channels) Slew Rate: 0.05V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 10 mV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 5 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 10 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1339 шт: термін постачання 21-31 дні (днів) |
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TS954IDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 950µA (x4 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 3 MHz Current - Input Bias: 35 nA Voltage - Input Offset: 6 mV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 10 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 12 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12911 шт: термін постачання 21-31 дні (днів) |
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EFL700PMB | STMicroelectronics |
Description: POWER MGMT BOARD EFL700A39 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EFL700EVALKIT | STMicroelectronics |
Description: DISCOVERY KIT MICRO BATTERY |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-ILL071V1 | STMicroelectronics |
Description: EVAL BOARD FOR ST1S40 STM32F030Packaging: Box Utilized IC / Part: ST1S40, STM32F030, STP04CM05 Supplied Contents: Board(s) Outputs and Type: 8 Non-Isolated Outputs Part Status: Active Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-CBL010V1 | STMicroelectronics |
Description: EVAL BOARD DISEQC 2.0 LNBH25Packaging: Box Voltage - Input: 8V ~ 16V Regulator Topology: Boost Board Type: Fully Populated Utilized IC / Part: LNBH25 Supplied Contents: Board(s) Main Purpose: Special Purpose DC/DC, LNB Outputs and Type: 1 Non-Isolated Output Part Status: Obsolete Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-ISA170V1 | STMicroelectronics |
Description: EVAL BOARD L6563H L6699 SRK2001Packaging: Box Voltage - Output: 12V Voltage - Input: 90 ~ 264 VAC Current - Output: 12.5A Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: L6563H, L6699, SRK2001 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1 Isolated Output Part Status: Active Power - Output: 150W Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-MKI164V1 | STMicroelectronics |
Description: DIL24 ADAPTER BOARD LIS2HH12Packaging: Box Sensitivity: 0.061mg/LSB, 0.122mg/LSB, 0.244mg/LSB Interface: I2C, Serial, SPI Voltage - Supply: 1.71V ~ 3.6V Sensor Type: Accelerometer, 3 Axis Utilized IC / Part: LIS2HH12 Supplied Contents: Board(s) Sensing Range: ±2g, 4g, 8g Part Status: Active Function: Accelerometer Type: Sensor Contents: Board(s) Platform: Professional MEMS Tool |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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STEVAL-ISA165V1 | STMicroelectronics |
Description: EVAL BOARD SRK2001 STP120N4F6Packaging: Box Voltage - Input: 4.5V ~ 32V Frequency - Switching: 500kHz Regulator Topology: Resonant Board Type: Fully Populated Utilized IC / Part: SRK2001, STP120N4F6 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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STEVAL-ISA166V1 | STMicroelectronics |
Description: EVAL BOARD SRK2001 STP120N4F6Packaging: Box Voltage - Input: 4.5V ~ 32V Frequency - Switching: 500kHz Regulator Topology: Resonant Board Type: Fully Populated Utilized IC / Part: SRK2001, STP120N4F6 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. |
| STGIPS10C60T-H |
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Виробник: STMicroelectronics
Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| STGW30H60DLFB |
Виробник: STMicroelectronics
Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
В кошику
од. на суму грн.
| STGWA15H120F2 |
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Виробник: STMicroelectronics
Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
товару немає в наявності
В кошику
од. на суму грн.
| STGWA25H120DF2 |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
на замовлення 392 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 477.57 грн |
| 30+ | 262.13 грн |
| 120+ | 218.64 грн |
| STGWA25H120F2 |
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Виробник: STMicroelectronics
Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
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| STI18N65M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
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| STI40N65M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
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| STP100N8F6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
на замовлення 23958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.04 грн |
| 50+ | 62.07 грн |
| 100+ | 61.74 грн |
| 500+ | 51.86 грн |
| 1000+ | 47.64 грн |
| 2000+ | 42.25 грн |
| 5000+ | 40.16 грн |
| STP13N65M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
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| STP160N4LF6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
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| STP18N65M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
на замовлення 999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.49 грн |
| 50+ | 114.41 грн |
| 100+ | 103.31 грн |
| 500+ | 78.71 грн |
| STP265N6F6AG |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
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| STP33N65M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 270.31 грн |
| 50+ | 169.83 грн |
| 100+ | 164.98 грн |
| STP40N65M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
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| STPS20SM120SFP |
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Виробник: STMicroelectronics
Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
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| STPS20SM120ST |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
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| STPS30SM120SFP |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
на замовлення 531 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.27 грн |
| 50+ | 50.08 грн |
| 100+ | 46.42 грн |
| 500+ | 41.85 грн |
| STPS41H100CTY |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.90 грн |
| STPSC20H065CTY |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY SIC 650V TO220AB
Description: DIODE SCHOTTKY SIC 650V TO220AB
на замовлення 362 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STTH15S12D |
![]() |
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 33281 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.81 грн |
| 50+ | 68.72 грн |
| 100+ | 61.67 грн |
| 500+ | 46.26 грн |
| 1000+ | 43.22 грн |
| STTH15S12W |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE STANDARD 1200V 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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| STTH30S12W |
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Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
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| STTH31AC06SWL |
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Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 273.76 грн |
| 10+ | 236.51 грн |
| 100+ | 193.76 грн |
| STTH60AC06CWL |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STTH75S12W |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 360.12 грн |
| 30+ | 170.84 грн |
| 120+ | 167.65 грн |
| 510+ | 148.85 грн |
| STTH8S12D |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 588 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.68 грн |
| 50+ | 35.66 грн |
| 100+ | 34.37 грн |
| 500+ | 30.21 грн |
| STU13N65M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Description: MOSFET N-CH 650V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
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| STW28N65M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
на замовлення 845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 357.53 грн |
| 30+ | 192.24 грн |
| 120+ | 158.69 грн |
| 510+ | 125.84 грн |
| STW40N65M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 472.39 грн |
| 30+ | 259.44 грн |
| 120+ | 216.46 грн |
| 510+ | 173.58 грн |
| STW56N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 655.47 грн |
| 30+ | 369.74 грн |
| 120+ | 312.39 грн |
| STW56N60M2-4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Description: MOSFET N-CH 600V 52A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 701.25 грн |
| 30+ | 397.87 грн |
| STW56N65M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 721.11 грн |
| 30+ | 409.63 грн |
| LDFMPUR |
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Виробник: STMicroelectronics
Description: IC REG LIN POS ADJ 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LIN POS ADJ 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9030 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.04 грн |
| 10+ | 43.74 грн |
| 25+ | 39.35 грн |
| 100+ | 32.44 грн |
| 250+ | 30.30 грн |
| 500+ | 29.01 грн |
| 1000+ | 27.48 грн |
| LDFMPVR |
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Виробник: STMicroelectronics
Description: IC REG LIN POS ADJ 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LIN POS ADJ 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 2605 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.63 грн |
| 10+ | 72.18 грн |
| 25+ | 65.37 грн |
| 100+ | 54.30 грн |
| 250+ | 50.93 грн |
| 500+ | 48.90 грн |
| 1000+ | 46.45 грн |
| STM32746G-EVAL2 |
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Виробник: STMicroelectronics
Description: STM32 F7 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: STM32 F7
Description: STM32 F7 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: STM32 F7
товару немає в наявності
В кошику
од. на суму грн.
| STM32756G-EVAL2 |
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Виробник: STMicroelectronics
Description: STM32 F7 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32 F7
Part Status: Not For New Designs
Description: STM32 F7 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32 F7
Part Status: Not For New Designs
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 42750.94 грн |
| M95M02-DWMN3TP/K |
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Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 265.04 грн |
| M95M02-DWMN3TP/K |
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Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 379.99 грн |
| 10+ | 325.25 грн |
| 25+ | 310.09 грн |
| 50+ | 280.74 грн |
| 100+ | 270.81 грн |
| 250+ | 258.22 грн |
| 500+ | 244.99 грн |
| 1000+ | 236.30 грн |
| LF247DT |
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Виробник: STMicroelectronics
Description: IC OPAMP JFET 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 105°C
Current - Supply: 1.4mA (x4 Channels)
Slew Rate: 16V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 20 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 44 V
Voltage - Supply Span (Max): 44 V
Description: IC OPAMP JFET 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: -40°C ~ 105°C
Current - Supply: 1.4mA (x4 Channels)
Slew Rate: 16V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 20 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 44 V
Voltage - Supply Span (Max): 44 V
на замовлення 14448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.95 грн |
| 10+ | 75.84 грн |
| 25+ | 68.76 грн |
| 100+ | 57.24 грн |
| 250+ | 53.77 грн |
| 500+ | 51.67 грн |
| 1000+ | 49.13 грн |
| LM124DT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -55°C ~ 125°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -55°C ~ 125°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
на замовлення 2110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.04 грн |
| 10+ | 98.55 грн |
| 25+ | 89.68 грн |
| 100+ | 74.99 грн |
| 250+ | 70.63 грн |
| 500+ | 67.99 грн |
| 1000+ | 64.75 грн |
| LM201ADT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 1.8mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 25 nA
Voltage - Input Offset: 700 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 44 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 1.8mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 25 nA
Voltage - Input Offset: 700 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 44 V
на замовлення 4759 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.59 грн |
| 10+ | 68.44 грн |
| 25+ | 62.04 грн |
| 100+ | 51.56 грн |
| 250+ | 48.39 грн |
| 500+ | 46.47 грн |
| 1000+ | 44.16 грн |
| LM239APT |
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Виробник: STMicroelectronics
Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 2V ~ 32V, ±1V ~ 16V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 2mV @ 30V
Current - Input Bias (Max): 0.1µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 2V ~ 32V, ±1V ~ 16V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 2mV @ 30V
Current - Input Bias (Max): 0.1µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 5448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 31.09 грн |
| 16+ | 20.96 грн |
| 25+ | 18.69 грн |
| 100+ | 15.21 грн |
| 250+ | 14.08 грн |
| 500+ | 13.40 грн |
| 1000+ | 12.63 грн |
| ST8034HNQR |
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Виробник: STMicroelectronics
Description: IC INTERFACE SPECIALIZED 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3V, 5V
Applications: Smart Card
Supplier Device Package: 24-QFN (4x4)
Description: IC INTERFACE SPECIALIZED 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3V, 5V
Applications: Smart Card
Supplier Device Package: 24-QFN (4x4)
на замовлення 2703 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.40 грн |
| 10+ | 105.37 грн |
| 25+ | 95.87 грн |
| 100+ | 80.16 грн |
| 250+ | 75.48 грн |
| 500+ | 72.66 грн |
| 1000+ | 69.19 грн |
| 2500+ | 66.78 грн |
| TS272AIDT |
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Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x2 Channels)
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x2 Channels)
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
товару немає в наявності
В кошику
од. на суму грн.
| TS272CDT |
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Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1mA (x2 Channels)
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.1 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1mA (x2 Channels)
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.1 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
на замовлення 3263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.41 грн |
| 10+ | 37.51 грн |
| 25+ | 33.66 грн |
| 100+ | 27.67 грн |
| 250+ | 25.79 грн |
| 500+ | 24.66 грн |
| 1000+ | 23.34 грн |
| TS274AIDT |
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Виробник: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 900 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Description: IC CMOS 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 900 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
на замовлення 2212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.95 грн |
| 10+ | 109.94 грн |
| 25+ | 103.69 грн |
| 100+ | 82.90 грн |
| 250+ | 77.83 грн |
| 500+ | 68.10 грн |
| 1000+ | 55.50 грн |
| TS3702IPT |
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Виробник: STMicroelectronics
Description: IC COMPARATOR 2 GEN PUR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V, ±1.35V ~ 8V
Supplier Device Package: 8-TSSOP
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 5mV @ 10V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 20mA
CMRR, PSRR (Typ): 82dB CMRR
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V, ±1.35V ~ 8V
Supplier Device Package: 8-TSSOP
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 5mV @ 10V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 20mA
CMRR, PSRR (Typ): 82dB CMRR
Part Status: Active
на замовлення 796 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.86 грн |
| 10+ | 39.42 грн |
| 25+ | 35.46 грн |
| 100+ | 29.16 грн |
| 250+ | 27.20 грн |
| 500+ | 26.02 грн |
| TS924AIDT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4659 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 232.31 грн |
| 10+ | 167.49 грн |
| 25+ | 153.48 грн |
| 100+ | 129.58 грн |
| 250+ | 122.69 грн |
| 500+ | 118.53 грн |
| 1000+ | 113.23 грн |
| TS931BILT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
на замовлення 13483 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 74.60 грн |
| 25+ | 70.75 грн |
| 100+ | 54.53 грн |
| 250+ | 50.98 грн |
| 500+ | 45.05 грн |
| 1000+ | 41.06 грн |
| TS932IDT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA (x2 Channels)
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 10 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA (x2 Channels)
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 10 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6129 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.77 грн |
| 10+ | 113.60 грн |
| 25+ | 103.62 грн |
| 100+ | 86.91 грн |
| 250+ | 81.97 грн |
| 500+ | 79.00 грн |
| 1000+ | 75.30 грн |
| TS934IDT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA (x4 Channels)
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 10 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA (x4 Channels)
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 10 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.54 грн |
| 10+ | 148.03 грн |
| 25+ | 135.42 грн |
| 100+ | 114.12 грн |
| 250+ | 107.92 грн |
| 500+ | 104.18 грн |
| 1000+ | 99.45 грн |
| TS954IDT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 950µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 35 nA
Voltage - Input Offset: 6 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 10 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 950µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 35 nA
Voltage - Input Offset: 6 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 10 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12911 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.54 грн |
| 10+ | 133.23 грн |
| 25+ | 121.75 грн |
| 100+ | 102.39 грн |
| 250+ | 96.74 грн |
| 500+ | 93.33 грн |
| 1000+ | 89.04 грн |
| EFL700PMB |
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Виробник: STMicroelectronics
Description: POWER MGMT BOARD EFL700A39
Description: POWER MGMT BOARD EFL700A39
товару немає в наявності
В кошику
од. на суму грн.
| EFL700EVALKIT |
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Виробник: STMicroelectronics
Description: DISCOVERY KIT MICRO BATTERY
Description: DISCOVERY KIT MICRO BATTERY
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STEVAL-ILL071V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD FOR ST1S40 STM32F030
Packaging: Box
Utilized IC / Part: ST1S40, STM32F030, STP04CM05
Supplied Contents: Board(s)
Outputs and Type: 8 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR ST1S40 STM32F030
Packaging: Box
Utilized IC / Part: ST1S40, STM32F030, STP04CM05
Supplied Contents: Board(s)
Outputs and Type: 8 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-CBL010V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD DISEQC 2.0 LNBH25
Packaging: Box
Voltage - Input: 8V ~ 16V
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: LNBH25
Supplied Contents: Board(s)
Main Purpose: Special Purpose DC/DC, LNB
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD DISEQC 2.0 LNBH25
Packaging: Box
Voltage - Input: 8V ~ 16V
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: LNBH25
Supplied Contents: Board(s)
Main Purpose: Special Purpose DC/DC, LNB
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-ISA170V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD L6563H L6699 SRK2001
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 12.5A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: L6563H, L6699, SRK2001
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 150W
Contents: Board(s)
Description: EVAL BOARD L6563H L6699 SRK2001
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 12.5A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: L6563H, L6699, SRK2001
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 150W
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-MKI164V1 |
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Виробник: STMicroelectronics
Description: DIL24 ADAPTER BOARD LIS2HH12
Packaging: Box
Sensitivity: 0.061mg/LSB, 0.122mg/LSB, 0.244mg/LSB
Interface: I2C, Serial, SPI
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: LIS2HH12
Supplied Contents: Board(s)
Sensing Range: ±2g, 4g, 8g
Part Status: Active
Function: Accelerometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
Description: DIL24 ADAPTER BOARD LIS2HH12
Packaging: Box
Sensitivity: 0.061mg/LSB, 0.122mg/LSB, 0.244mg/LSB
Interface: I2C, Serial, SPI
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: LIS2HH12
Supplied Contents: Board(s)
Sensing Range: ±2g, 4g, 8g
Part Status: Active
Function: Accelerometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1328.22 грн |
| STEVAL-ISA165V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD SRK2001 STP120N4F6
Packaging: Box
Voltage - Input: 4.5V ~ 32V
Frequency - Switching: 500kHz
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: SRK2001, STP120N4F6
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD SRK2001 STP120N4F6
Packaging: Box
Voltage - Input: 4.5V ~ 32V
Frequency - Switching: 500kHz
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: SRK2001, STP120N4F6
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1216.82 грн |
| STEVAL-ISA166V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD SRK2001 STP120N4F6
Packaging: Box
Voltage - Input: 4.5V ~ 32V
Frequency - Switching: 500kHz
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: SRK2001, STP120N4F6
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Description: EVAL BOARD SRK2001 STP120N4F6
Packaging: Box
Voltage - Input: 4.5V ~ 32V
Frequency - Switching: 500kHz
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: SRK2001, STP120N4F6
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.


























