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STF28N65M2 STF28N65M2 STMicroelectronics en.DM00150353.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+248.07 грн
10+149.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF24N65M2 STF24N65M2 STMicroelectronics en.DM00121015.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
3+162.38 грн
10+131.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF10N65K3 STF10N65K3 STMicroelectronics en.CD00235865.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 42nC
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
3+164.18 грн
10+84.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
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ULN2074B ULN2074B STMicroelectronics ULN2064B.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 1.5A
Output voltage: 50V
Number of channels: 4
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load
Input voltage: 30V
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
2+352.71 грн
3+294.01 грн
10+274.75 грн
25+264.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
P0102AL 5AA4 P0102AL 5AA4 STMicroelectronics P0102AL.pdf Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 0.2mA
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 7A
на замовлення 6912 шт:
термін постачання 21-30 дні (днів)
12+39.69 грн
18+24.63 грн
100+17.42 грн
250+15.25 грн
500+14.41 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
STF12N60M2 STMicroelectronics en.DM00187616.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
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STL40N10F7 STMicroelectronics en.DM00085663.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 40A
Power dissipation: 70W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF38N65M5 STF38N65M5 STMicroelectronics en.DM00113621.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
2+342.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STL24N60DM2 STMicroelectronics en.DM00109425.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M2 STMicroelectronics en.DM00087524.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M6 STMicroelectronics stl24n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF12N65M2 STMicroelectronics en.DM00152663.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
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STF7N60DM2 STMicroelectronics en.DM00407811.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
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STF7N60M2 STMicroelectronics en.DM00088735.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
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STL7N60M2 STMicroelectronics en.DM00157582.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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STP80N600K6 STMicroelectronics stp80n600k6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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STF11N60M2-EP STMicroelectronics en.DM00286212.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 12.4nC
Pulsed drain current: 30A
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STF7N65M2 STMicroelectronics en.DM00127830.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
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STF57N65M5 STMicroelectronics en.DM00049152.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V-4 STMicroelectronics Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Mounting: THT
Case: HIP247-4
On-state resistance: 0.1Ω
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 61nC
Power dissipation: 277W
Drain current: 36A
Drain-source voltage: 1.2kV
Pulsed drain current: 107A
Polarisation: unipolar
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STM8L151F3P3 STM8L151F3P3 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCBAB15AE62CFE28&compId=STM8L151C2-DTE.pdf?ci_sign=5061f32d3441f345c92f45f40e655774b3f9f773 Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
Kind of core: 8-bit
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STP10N105K5 STMicroelectronics en.DM00134103.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STL115N10F7AG STMicroelectronics en.DM00333356.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Mounting: SMD
Case: PowerFLAT 5x6
On-state resistance: 6mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 72.5nC
Power dissipation: 136W
Drain current: 107A
Drain-source voltage: 100V
Pulsed drain current: 428A
Application: automotive industry
Polarisation: unipolar
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STF6N65K3 STMicroelectronics en.CD00297329.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.4A; Idm: 21.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 21.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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STF6N65M2 STMicroelectronics en.DM00128198.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
3+155.16 грн
10+103.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SCTW70N120G2V STMicroelectronics sctw70n120g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W
Gate-source voltage: -10...22V
Gate charge: 150nC
On-state resistance: 30mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 91A
Technology: SiC
Case: HIP247™
Pulsed drain current: 274A
Power dissipation: 547W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
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STM32F103ZGT6TR STM32F103ZGT6TR STMicroelectronics stm32f103zg.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP144; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 3
Number of inputs/outputs: 112
Memory: 96kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; LCD controller; PoR; PWM
Case: LQFP144
Mounting: SMD
на замовлення 489 шт:
термін постачання 21-30 дні (днів)
1+1104.15 грн
5+964.97 грн
25+942.35 грн
50+919.74 грн
100+904.66 грн
250+866.97 грн
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STD4N90K5 STMicroelectronics en.DM00339980.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
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STF4N90K5 STF4N90K5 STMicroelectronics en.DM00340030.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 20W
Gate charge: 5.3nC
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
3+160.57 грн
10+103.87 грн
25+84.60 грн
50+77.90 грн
Мінімальне замовлення: 3
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STF10N60DM2 STMicroelectronics en.DM00299235.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 32A
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STF10N60M2 STMicroelectronics en.DM00086387.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 30A
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STF6N90K5 STF6N90K5 STMicroelectronics en.DM00339599.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
3+184.02 грн
10+91.30 грн
50+84.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STL45N65M5 STMicroelectronics en.DM00058185.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.5A
Pulsed drain current: 90A
Power dissipation: 160W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF11N65M2 STMicroelectronics en.DM00105472.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 28A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 12.5nC
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STF11N65M5 STMicroelectronics en.DM00049307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
4+116.37 грн
10+86.28 грн
50+83.76 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STL33N60DM2 STMicroelectronics en.DM00128601.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL33N60DM6 STMicroelectronics stl33n60dm6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 80A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL33N60M2 STMicroelectronics en.DM00078624.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 45.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL33N60M6 STMicroelectronics stl33n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 78A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 78A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 33.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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STP33N60M6 STMicroelectronics stp33n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 78A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 78A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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STM32L552RCT6 STM32L552RCT6 STMicroelectronics stm32l552ce.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB FLASH; 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
1+555.68 грн
10+480.81 грн
В кошику  од. на суму  грн.
STM32L552ZET6 STM32L552ZET6 STMicroelectronics stm32l552ce.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP144; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 115/111
Case: LQFP144
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
1+779.40 грн
3+696.92 грн
10+642.48 грн
25+552.85 грн
В кошику  од. на суму  грн.
STM32L562RET6 STM32L562RET6 STMicroelectronics stm32l562ce.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
1+648.60 грн
В кошику  од. на суму  грн.
STM32L562VET6 STM32L562VET6 STMicroelectronics stm32l562ce.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 83/79
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
1+746.02 грн
5+635.78 грн
10+619.86 грн
В кошику  од. на суму  грн.
STM32U585RIT6 STM32U585RIT6 STMicroelectronics pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDBAE73CB8A05440D4&compId=stm32u585ai.pdf?ci_sign=82796e6266dda588b2f6611d53b2867344bcfc52 Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 51/47
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; LPUART; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 786kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 2
Family: STM32U5
Kind of core: 32-bit
Number of comparators: 2
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+791.13 грн
3+713.68 грн
10+685.20 грн
25+655.88 грн
В кошику  од. на суму  грн.
STF7N80K5 STMicroelectronics stf7n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 13.4nC
Kind of package: tube
Kind of channel: enhancement
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STL7N80K5 STMicroelectronics en.DM00100648.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 14A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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TDA7296 TDA7296 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5A9DC2487AF20D6&compId=TDA7296.pdf?ci_sign=2694327e5c37e38ee0669103ded65e3d6a860e10 description Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 30W; stereo; 10÷35VDC; Ch: 1; MULTIWATT15
Type of integrated circuit: audio amplifier
Output power: 30W
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 10...35V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Kind of package: tube
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
1+573.72 грн
3+478.30 грн
5+443.95 грн
10+402.07 грн
В кошику  од. на суму  грн.
STQ1NK60ZR-AP STQ1NK60ZR-AP STMicroelectronics en.CD00003347.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 300mA; Idm: 0.189A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 4.9nC
Pulsed drain current: 0.189A
Drain current: 0.3A
Power dissipation: 3W
On-state resistance: 15Ω
Gate-source voltage: ±30V
Kind of package: Ammo Pack
Drain-source voltage: 600V
Kind of channel: enhancement
Case: TO92 Formed
на замовлення 1957 шт:
термін постачання 21-30 дні (днів)
15+31.57 грн
21+20.44 грн
100+16.33 грн
500+15.08 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
STL11N65M5 STMicroelectronics en.DM00116135.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 8.5A; Idm: 34A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 8.5A
Power dissipation: 70W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 34A
Gate charge: 17nC
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BTB16-600CRG STMicroelectronics en.CD00002265.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 160A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
6+87.50 грн
10+58.38 грн
50+50.26 грн
100+46.91 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STLINK-V3PWR STMicroelectronics STM32CubeMonPwr.pdf Category: Programmers
Description: Programmer: microcontrollers; STM32; USB; pin strips,USB
Type of ICs programmer: microcontrollers
Associated circuits: STM32
Communication with PC: USB
Interface: JTAG; SWD; SWV; USB; VCP
Kind of connector: pin strips; USB
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B-STLINK-ISOL STMicroelectronics STLINK-V3SET.pdf Category: STM development kits
Description: Dev.kit: adapter
Related items: STLINK-V3SET
Type of development kit: adapter
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T435-600H STMicroelectronics en.CD00002383.pdf description Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 35mA; Ifsm: 31A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 35mA
Max. forward impulse current: 31A
Mounting: THT
Kind of package: tube
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STTH812D STTH812D STMicroelectronics stth812.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 2643 шт:
термін постачання 21-30 дні (днів)
6+82.99 грн
10+42.80 грн
50+41.38 грн
100+37.28 грн
250+35.35 грн
500+30.91 грн
1000+28.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STTH3010D STMicroelectronics en.CD00096486.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 180A; TO220AC; Ufmax: 2V
Max. forward voltage: 2V
Load current: 30A
Max. load current: 50A
Max. forward impulse current: 180A
Max. off-state voltage: 1kV
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 42ns
Leakage current: 15µA
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STM32G431C8T6TR STMicroelectronics stm32g431c6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP48; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: LQFP48
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x3; LPUART; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Memory: 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 17
Number of 12bit D/A converters: 4
Number of 16bit timers: 10
Number of 32bit timers: 1
Family: STM32G4
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Kind of package: reel; tape
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STM32G431C8U3 STMicroelectronics stm32g431c6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFQFPN48; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 42
Case: UFQFPN48
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x3; LPUART; SAI; SPI x3; UART; USART x3; USB
Kind of architecture: Cortex M4
Memory: 32kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 18
Number of 12bit D/A converters: 4
Number of 16bit timers: 10
Number of 32bit timers: 1
Family: STM32G4
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Kind of package: in-tray
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STF28N65M2 en.DM00150353.pdf
STF28N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+248.07 грн
10+149.10 грн
Мінімальне замовлення: 2
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STF24N65M2 en.DM00121015.pdf
STF24N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+162.38 грн
10+131.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF10N65K3 en.CD00235865.pdf
STF10N65K3
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 42nC
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+164.18 грн
10+84.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
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ULN2074B ULN2064B.pdf
ULN2074B
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 1.5A
Output voltage: 50V
Number of channels: 4
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load
Input voltage: 30V
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+352.71 грн
3+294.01 грн
10+274.75 грн
25+264.70 грн
Мінімальне замовлення: 2
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P0102AL 5AA4 P0102AL.pdf
P0102AL 5AA4
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 0.2mA
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 7A
на замовлення 6912 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+39.69 грн
18+24.63 грн
100+17.42 грн
250+15.25 грн
500+14.41 грн
Мінімальне замовлення: 12
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STF12N60M2 en.DM00187616.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
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STL40N10F7 en.DM00085663.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 40A
Power dissipation: 70W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF38N65M5 en.DM00113621.pdf
STF38N65M5
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+342.79 грн
Мінімальне замовлення: 2
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STL24N60DM2 en.DM00109425.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M2 en.DM00087524.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M6 stl24n60m6.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF12N65M2 en.DM00152663.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
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STF7N60DM2 en.DM00407811.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
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STF7N60M2 en.DM00088735.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
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STL7N60M2 en.DM00157582.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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STP80N600K6 stp80n600k6.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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STF11N60M2-EP en.DM00286212.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 12.4nC
Pulsed drain current: 30A
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STF7N65M2 en.DM00127830.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
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STF57N65M5 en.DM00049152.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V-4
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Mounting: THT
Case: HIP247-4
On-state resistance: 0.1Ω
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 61nC
Power dissipation: 277W
Drain current: 36A
Drain-source voltage: 1.2kV
Pulsed drain current: 107A
Polarisation: unipolar
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STM8L151F3P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCBAB15AE62CFE28&compId=STM8L151C2-DTE.pdf?ci_sign=5061f32d3441f345c92f45f40e655774b3f9f773
STM8L151F3P3
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
Kind of core: 8-bit
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STP10N105K5 en.DM00134103.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STL115N10F7AG en.DM00333356.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Mounting: SMD
Case: PowerFLAT 5x6
On-state resistance: 6mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 72.5nC
Power dissipation: 136W
Drain current: 107A
Drain-source voltage: 100V
Pulsed drain current: 428A
Application: automotive industry
Polarisation: unipolar
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STF6N65K3 en.CD00297329.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.4A; Idm: 21.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 21.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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STF6N65M2 en.DM00128198.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+155.16 грн
10+103.03 грн
Мінімальне замовлення: 3
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SCTW70N120G2V sctw70n120g2v.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W
Gate-source voltage: -10...22V
Gate charge: 150nC
On-state resistance: 30mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 91A
Technology: SiC
Case: HIP247™
Pulsed drain current: 274A
Power dissipation: 547W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
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STM32F103ZGT6TR stm32f103zg.pdf
STM32F103ZGT6TR
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP144; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 3
Number of inputs/outputs: 112
Memory: 96kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; LCD controller; PoR; PWM
Case: LQFP144
Mounting: SMD
на замовлення 489 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1104.15 грн
5+964.97 грн
25+942.35 грн
50+919.74 грн
100+904.66 грн
250+866.97 грн
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STD4N90K5 en.DM00339980.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
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STF4N90K5 en.DM00340030.pdf
STF4N90K5
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 20W
Gate charge: 5.3nC
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+160.57 грн
10+103.87 грн
25+84.60 грн
50+77.90 грн
Мінімальне замовлення: 3
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STF10N60DM2 en.DM00299235.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 32A
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STF10N60M2 en.DM00086387.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 30A
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STF6N90K5 en.DM00339599.pdf
STF6N90K5
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+184.02 грн
10+91.30 грн
50+84.60 грн
Мінімальне замовлення: 3
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STL45N65M5 en.DM00058185.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.5A
Pulsed drain current: 90A
Power dissipation: 160W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF11N65M2 en.DM00105472.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 28A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 12.5nC
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STF11N65M5 en.DM00049307.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+116.37 грн
10+86.28 грн
50+83.76 грн
Мінімальне замовлення: 4
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STL33N60DM2 en.DM00128601.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL33N60DM6 stl33n60dm6.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 80A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL33N60M2 en.DM00078624.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 45.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL33N60M6 stl33n60m6.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 78A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 78A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 33.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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STP33N60M6 stp33n60m6.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 78A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 78A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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STM32L552RCT6 stm32l552ce.pdf
STM32L552RCT6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB FLASH; 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+555.68 грн
10+480.81 грн
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STM32L552ZET6 stm32l552ce.pdf
STM32L552ZET6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP144; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 115/111
Case: LQFP144
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+779.40 грн
3+696.92 грн
10+642.48 грн
25+552.85 грн
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STM32L562RET6 stm32l562ce.pdf
STM32L562RET6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+648.60 грн
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STM32L562VET6 stm32l562ce.pdf
STM32L562VET6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 83/79
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+746.02 грн
5+635.78 грн
10+619.86 грн
В кошику  од. на суму  грн.
STM32U585RIT6 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDBAE73CB8A05440D4&compId=stm32u585ai.pdf?ci_sign=82796e6266dda588b2f6611d53b2867344bcfc52
STM32U585RIT6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 51/47
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; LPUART; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 786kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 2
Family: STM32U5
Kind of core: 32-bit
Number of comparators: 2
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+791.13 грн
3+713.68 грн
10+685.20 грн
25+655.88 грн
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STF7N80K5 stf7n80k5.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 13.4nC
Kind of package: tube
Kind of channel: enhancement
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STL7N80K5 en.DM00100648.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 14A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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TDA7296 description pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5A9DC2487AF20D6&compId=TDA7296.pdf?ci_sign=2694327e5c37e38ee0669103ded65e3d6a860e10
TDA7296
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 30W; stereo; 10÷35VDC; Ch: 1; MULTIWATT15
Type of integrated circuit: audio amplifier
Output power: 30W
Integrated circuit features: stereo
Mounting: THT
Supply voltage: 10...35V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Kind of package: tube
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+573.72 грн
3+478.30 грн
5+443.95 грн
10+402.07 грн
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STQ1NK60ZR-AP en.CD00003347.pdf
STQ1NK60ZR-AP
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 300mA; Idm: 0.189A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 4.9nC
Pulsed drain current: 0.189A
Drain current: 0.3A
Power dissipation: 3W
On-state resistance: 15Ω
Gate-source voltage: ±30V
Kind of package: Ammo Pack
Drain-source voltage: 600V
Kind of channel: enhancement
Case: TO92 Formed
на замовлення 1957 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+31.57 грн
21+20.44 грн
100+16.33 грн
500+15.08 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
STL11N65M5 en.DM00116135.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 8.5A; Idm: 34A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 8.5A
Power dissipation: 70W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 34A
Gate charge: 17nC
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BTB16-600CRG en.CD00002265.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 160A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+87.50 грн
10+58.38 грн
50+50.26 грн
100+46.91 грн
Мінімальне замовлення: 6
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STLINK-V3PWR STM32CubeMonPwr.pdf
Виробник: STMicroelectronics
Category: Programmers
Description: Programmer: microcontrollers; STM32; USB; pin strips,USB
Type of ICs programmer: microcontrollers
Associated circuits: STM32
Communication with PC: USB
Interface: JTAG; SWD; SWV; USB; VCP
Kind of connector: pin strips; USB
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B-STLINK-ISOL STLINK-V3SET.pdf
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: adapter
Related items: STLINK-V3SET
Type of development kit: adapter
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T435-600H description en.CD00002383.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 35mA; Ifsm: 31A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 35mA
Max. forward impulse current: 31A
Mounting: THT
Kind of package: tube
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STTH812D stth812.pdf
STTH812D
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 2643 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+82.99 грн
10+42.80 грн
50+41.38 грн
100+37.28 грн
250+35.35 грн
500+30.91 грн
1000+28.56 грн
Мінімальне замовлення: 6
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STTH3010D en.CD00096486.pdf
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 180A; TO220AC; Ufmax: 2V
Max. forward voltage: 2V
Load current: 30A
Max. load current: 50A
Max. forward impulse current: 180A
Max. off-state voltage: 1kV
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 42ns
Leakage current: 15µA
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STM32G431C8T6TR stm32g431c6.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP48; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: LQFP48
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x3; LPUART; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Memory: 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 17
Number of 12bit D/A converters: 4
Number of 16bit timers: 10
Number of 32bit timers: 1
Family: STM32G4
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Kind of package: reel; tape
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STM32G431C8U3 stm32g431c6.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFQFPN48; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 42
Case: UFQFPN48
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x3; LPUART; SAI; SPI x3; UART; USART x3; USB
Kind of architecture: Cortex M4
Memory: 32kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 18
Number of 12bit D/A converters: 4
Number of 16bit timers: 10
Number of 32bit timers: 1
Family: STM32G4
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Kind of package: in-tray
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