Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (161827) > Сторінка 2674 з 2698
| Фото | Назва | Виробник | Інформація |
Доступність |
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STPS160A | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 60V Load current: 1A Case: SMA Max. forward voltage: 0.49V Max. forward impulse current: 75A Max. load current: 10A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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| STM32F103V8T6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SPI x2; USART x3; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 16bit timers: 4 Family: STM32F1 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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P6KE33CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 28V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack |
на замовлення 8130 шт: термін постачання 21-30 дні (днів) |
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| STL210N4F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STL210N4F7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32F378VCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C Kind of architecture: Cortex M4 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F3 Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of 12bit D/A converters: 3 Supply voltage: 1.8V DC Number of comparators: 2 Number of inputs/outputs: 83 Memory: 32kB SRAM; 256kB FLASH Kind of core: 32-bit Clock frequency: 72MHz Interface: CAN; GPIO; I2C; I2S; SPI; USART Integrated circuit features: CRC; DMA; PoR; watchdog Case: LQFP100 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F746BGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.7...3.6V DC Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 320kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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T410-800T | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A Mounting: THT Type of thyristor: triac Gate current: 10mA Max. load current: 4A Max. off-state voltage: 0.8kV Max. forward impulse current: 31A Kind of package: tube Case: TO220AB |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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USB6B1 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 40A Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 5V Leakage current: 10µA Kind of package: reel; tape Application: Ethernet; USB Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS340S | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 40V Load current: 3A Case: SMC Max. forward voltage: 0.52V Max. forward impulse current: 75A Max. load current: 6A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 2380 шт: термін постачання 21-30 дні (днів) |
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STGF19NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 32W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 32W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 55nC Kind of package: tube |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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SMBJ12CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 14V; 31A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1366 шт: термін постачання 21-30 дні (днів) |
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STPS1045D | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 180A Kind of package: tube Max. load current: 30A Heatsink thickness: 1.23...1.32mm |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
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SCTW35N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 68mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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STPS3L60Q | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V Type of diode: Schottky rectifying Case: DO15 Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. load current: 10A Max. forward impulse current: 100A Kind of package: Ammo Pack Leakage current: 30mA |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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VNB35NV04TR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 30A; Ch: 1; SMD; D2PAK Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 30A Number of channels: 1 Mounting: SMD Case: D2PAK On-state resistance: 13mΩ Output voltage: 36V |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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ULN2801A | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: DIP18 Output current: 0.5A Output voltage: 50V Number of channels: 8 Mounting: THT Operating temperature: -20...85°C Application: for inductive load; PMOS/CMOS Input voltage: 30V |
на замовлення 221 шт: термін постачання 21-30 дні (днів) |
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STW30N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 88A Power dissipation: 140W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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SMBJ6.5CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7.58V; 56A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.58V Max. forward impulse current: 56A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| STWA75N65DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 280A Power dissipation: 480W Case: TO247 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 118nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STPS3045CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.57V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 45V Max. forward impulse current: 220A Semiconductor structure: common cathode; double Case: TO220AB |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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| STPS3045CGY-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Max. load current: 30A Leakage current: 40mA Max. forward impulse current: 220A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STM32F103T4U6A | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 26 Case: VFQFPN36 Supply voltage: 2...3.6V DC Interface: CAN; I2C; SPI; USB Kind of architecture: Cortex M3 Memory: 6kB SRAM; 16kB FLASH Family: STM32F1 Kind of core: 32-bit Number of 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32F103T6U6A | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 26 Case: VFQFPN36 Supply voltage: 2...3.6V DC Interface: CAN; I2C; SPI; USB Kind of architecture: Cortex M3 Memory: 10kB SRAM; 32kB FLASH Family: STM32F1 Kind of core: 32-bit Number of 16bit timers: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STM32G4A1KEU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 170MHz; UFQFPN32; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN32 Supply voltage: 1.71...3.6V DC Interface: CAN-FD x2; I2C x3; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB Kind of architecture: Cortex M4 Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog Memory: 112kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 11 Number of 12bit D/A converters: 4 Number of 16bit timers: 11 Number of 32bit timers: 1 Family: STM32G4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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T810-600G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; D2PAK; Igt: 10mA; logic level Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 10mA Features of semiconductor devices: logic level Mounting: SMD Kind of package: reel; tape |
на замовлення 674 шт: термін постачання 21-30 дні (днів) |
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T810-600B | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 15mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 15mA Mounting: SMD Kind of package: tube |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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T810-600B-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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LM2904WHDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...150°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2904WYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: low power Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S207CBT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 24MHz Mounting: SMD Case: LQFP48 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART x2 Integrated circuit features: Beeper; IWDG; WWDG Memory: 2kB EEPROM; 6kB RAM; 128kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ16A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 18.7V; 23.1A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 18.7V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1023 шт: термін постачання 21-30 дні (днів) |
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STP3NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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TSC101CILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; Ch: 1; 4÷24VDC; SOT23-5; 2.3mV; 8uA Type of integrated circuit: instrumentation amplifier Number of channels: single; 1 Mounting: SMT Voltage supply range: 4...24V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.9V/μs Input offset voltage: 2.3mV Kind of package: reel; tape Input bias current: 8µA Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGW30NC120HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 220W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 135A Mounting: THT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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STGYA50H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 535W Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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T410-700T | STMicroelectronics |
Category: TriacsDescription: Triac; 700V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 4A Case: TO220AB Gate current: 10mA Max. forward impulse current: 31A Mounting: THT Kind of package: tube |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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SMBJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 38.6V; 11.8A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 11.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 973 шт: термін постачання 21-30 дні (днів) |
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STPST5H100UF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.68V Leakage current: 11.5µA Max. forward impulse current: 130A Kind of package: reel; tape |
на замовлення 4800 шт: термін постачання 21-30 дні (днів) |
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STP11NK50ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.3A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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TL432IL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: SMD Case: SOT23-3 Operating temperature: -40...105°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STM32L010K4T6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 26 Case: LQFP32 Supply voltage: 1.8...3.6V DC Interface: I2C; LPUART; SPI; USART Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog Memory: 128B EEPROM; 2kB SRAM; 16kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 3 Family: STM32L0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STP28N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 84A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.16Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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| STPS1045DEE-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: PowerFLAT Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 100A Kind of package: reel; tape Max. load current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STPS1045SF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 210A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STPS1045SFY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STGIPS10K60T | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM™ Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: SLLIMM™ Case: SDIP-25L Output current: 10A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18/0...400V DC Frequency: 20kHz Power dissipation: 33W Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ESDCAN06-2BLY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 38V; 3A; 230W; bidirectional,double; SOT23-3 Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Leakage current: 0.1µA Number of channels: 2 Max. forward impulse current: 3A Max. off-state voltage: 35V Breakdown voltage: 38V Peak pulse power dissipation: 230W Application: automotive industry; CAN Semiconductor structure: bidirectional; double Version: ESD |
на замовлення 7633 шт: термін постачання 21-30 дні (днів) |
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| LF90CPT-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX Kind of voltage regulator: fixed; LDO; linear Manufacturer series: LFXX Case: PPAK Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Voltage drop: 0.45V Output current: 0.5A Number of channels: 1 Tolerance: ±2% Input voltage: 2.5...16V Output voltage: 9V |
на замовлення 2497 шт: термін постачання 21-30 дні (днів) |
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SMAJ48A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 23A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 1215 шт: термін постачання 21-30 дні (днів) |
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| STM32G484PEI6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 170MHz; UFBGA121; 1.71÷3.6VDC Mounting: SMD Type of integrated circuit: STM32 ARM microcontroller Kind of package: in-tray Case: UFBGA121 Family: STM32G4 Operating temperature: -40...85°C Supply voltage: 1.71...3.6V DC Number of 32bit timers: 2 Number of 12bit D/A converters: 7 Number of 16bit timers: 11 Number of 12bit A/D converters: 42 Number of inputs/outputs: 86 Memory: 128kB SRAM; 512kB FLASH Clock frequency: 170MHz Kind of core: 32-bit Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB Kind of architecture: Cortex M4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
L5970ADTR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uout: 1.235÷35VDC; 1.5A; SO8; SMD; 500kHz Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Output voltage: 1.235...35V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.5MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Operating voltage: 4.4...36V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP11NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 125W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.3A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 212 шт: термін постачання 21-30 дні (днів) |
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STP11NK40Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.67A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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STP11NK40ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.67A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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STP14NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 150W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.6A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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| STL22N60DM6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 42A; 102W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 42A Power dissipation: 102W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 265mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LE33CZ-AP | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 3.3V Output current: 0.1A Case: TO92 Mounting: THT Manufacturer series: LEXX Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...18V |
на замовлення 1775 шт: термін постачання 21-30 дні (днів) |
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| STGP15M65DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 136W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 136W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 45nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LD39020ADTPU33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 3.3V Output current: 0.2A Case: DFN4 Mounting: SMD Manufacturer series: LD39020 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 0.5...1.5% Number of channels: 1 Input voltage: 1.5...5.5V |
товару немає в наявності |
В кошику од. на суму грн. |
| STPS160A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 1A
Case: SMA
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Max. load current: 10A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 1A
Case: SMA
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Max. load current: 10A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.24 грн |
| 27+ | 15.36 грн |
| 31+ | 13.63 грн |
| STM32F103V8T6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
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В кошику
од. на суму грн.
| P6KE33CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 28V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 28V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
на замовлення 8130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.80 грн |
| 20+ | 21.23 грн |
| 50+ | 14.78 грн |
| 100+ | 12.72 грн |
| 500+ | 9.08 грн |
| 1000+ | 8.59 грн |
| STL210N4F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| STL210N4F7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику
од. на суму грн.
| STM32F378VCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F3
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 3
Supply voltage: 1.8V DC
Number of comparators: 2
Number of inputs/outputs: 83
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Integrated circuit features: CRC; DMA; PoR; watchdog
Case: LQFP100
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F3
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 3
Supply voltage: 1.8V DC
Number of comparators: 2
Number of inputs/outputs: 83
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Integrated circuit features: CRC; DMA; PoR; watchdog
Case: LQFP100
Mounting: SMD
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| STM32F746BGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
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од. на суму грн.
| T410-800T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 31A
Kind of package: tube
Case: TO220AB
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 31A
Kind of package: tube
Case: TO220AB
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.72 грн |
| 10+ | 49.22 грн |
| 50+ | 37.99 грн |
| USB6B1 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 10µA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 10µA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
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| STPS340S |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMC
Max. forward voltage: 0.52V
Max. forward impulse current: 75A
Max. load current: 6A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMC
Max. forward voltage: 0.52V
Max. forward impulse current: 75A
Max. load current: 6A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 2380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.12 грн |
| 28+ | 15.03 грн |
| 32+ | 13.30 грн |
| 100+ | 9.50 грн |
| 250+ | 8.51 грн |
| 500+ | 7.85 грн |
| 1000+ | 7.27 грн |
| STGF19NC60KD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.09 грн |
| 10+ | 144.53 грн |
| SMBJ12CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 31A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 31A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1366 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 49+ | 8.59 грн |
| 100+ | 7.72 грн |
| 250+ | 7.16 грн |
| 500+ | 6.81 грн |
| 1000+ | 6.11 грн |
| STPS1045D | ![]() |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.23...1.32mm
на замовлення 173 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.91 грн |
| 17+ | 24.78 грн |
| SCTW35N65G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 720.42 грн |
| STPS3L60Q |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: Ammo Pack
Leakage current: 30mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: Ammo Pack
Leakage current: 30mA
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.24 грн |
| 25+ | 17.01 грн |
| 27+ | 15.69 грн |
| 50+ | 12.88 грн |
| 100+ | 11.81 грн |
| VNB35NV04TR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 30A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 30A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 13mΩ
Output voltage: 36V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 30A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 30A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 13mΩ
Output voltage: 36V
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 376.22 грн |
| 10+ | 239.51 грн |
| 25+ | 215.56 грн |
| 50+ | 200.69 грн |
| ULN2801A |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load; PMOS/CMOS
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load; PMOS/CMOS
Input voltage: 30V
на замовлення 221 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.93 грн |
| 10+ | 180.87 грн |
| 20+ | 172.61 грн |
| 40+ | 164.35 грн |
| 100+ | 153.61 грн |
| STW30N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 401.12 грн |
| 5+ | 299.80 грн |
| 10+ | 263.46 грн |
| SMBJ6.5CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.58V; 56A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.58V
Max. forward impulse current: 56A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.58V; 56A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.58V
Max. forward impulse current: 56A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.78 грн |
| 62+ | 6.69 грн |
| 100+ | 5.97 грн |
| 250+ | 5.53 грн |
| 500+ | 5.28 грн |
| 1000+ | 4.74 грн |
| 2500+ | 4.67 грн |
| STWA75N65DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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| STPS3045CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.57V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 220A
Semiconductor structure: common cathode; double
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.57V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 220A
Semiconductor structure: common cathode; double
Case: TO220AB
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.83 грн |
| 8+ | 55.50 грн |
| 10+ | 44.18 грн |
| 25+ | 38.65 грн |
| STPS3045CGY-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 30A
Leakage current: 40mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 30A
Leakage current: 40mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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| STM32F103T4U6A |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: VFQFPN36
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Memory: 6kB SRAM; 16kB FLASH
Family: STM32F1
Kind of core: 32-bit
Number of 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: VFQFPN36
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Memory: 6kB SRAM; 16kB FLASH
Family: STM32F1
Kind of core: 32-bit
Number of 16bit timers: 3
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| STM32F103T6U6A |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: VFQFPN36
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Memory: 10kB SRAM; 32kB FLASH
Family: STM32F1
Kind of core: 32-bit
Number of 16bit timers: 3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: VFQFPN36
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Memory: 10kB SRAM; 32kB FLASH
Family: STM32F1
Kind of core: 32-bit
Number of 16bit timers: 3
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| STM32G4A1KEU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFQFPN32; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x2; I2C x3; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 112kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 11
Number of 12bit D/A converters: 4
Number of 16bit timers: 11
Number of 32bit timers: 1
Family: STM32G4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFQFPN32; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x2; I2C x3; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 112kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 11
Number of 12bit D/A converters: 4
Number of 16bit timers: 11
Number of 32bit timers: 1
Family: STM32G4
Kind of package: in-tray
Kind of core: 32-bit
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| T810-600G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Features of semiconductor devices: logic level
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Features of semiconductor devices: logic level
Mounting: SMD
Kind of package: reel; tape
на замовлення 674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.38 грн |
| 10+ | 52.53 грн |
| 100+ | 37.58 грн |
| 250+ | 31.55 грн |
| 500+ | 30.97 грн |
| T810-600B |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 15mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 15mA
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 15mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 15mA
Mounting: SMD
Kind of package: tube
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.02 грн |
| T810-600B-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.95 грн |
| 10+ | 56.41 грн |
| LM2904WHDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
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| LM2904WYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
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| STM8S207CBT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 24MHz
Mounting: SMD
Case: LQFP48
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART x2
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 2kB EEPROM; 6kB RAM; 128kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 24MHz
Mounting: SMD
Case: LQFP48
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART x2
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 2kB EEPROM; 6kB RAM; 128kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Family: STM8S
Kind of core: 8-bit
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| SMBJ16A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18.7V; 23.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18.7V; 23.1A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1023 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.79 грн |
| 34+ | 12.31 грн |
| 50+ | 9.25 грн |
| 75+ | 8.67 грн |
| 100+ | 8.18 грн |
| 250+ | 6.85 грн |
| 500+ | 6.03 грн |
| 1000+ | 5.29 грн |
| STP3NK60ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.96 грн |
| 10+ | 64.58 грн |
| 25+ | 60.12 грн |
| 50+ | 56.74 грн |
| 100+ | 53.60 грн |
| TSC101CILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; 4÷24VDC; SOT23-5; 2.3mV; 8uA
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 4...24V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.9V/μs
Input offset voltage: 2.3mV
Kind of package: reel; tape
Input bias current: 8µA
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; 4÷24VDC; SOT23-5; 2.3mV; 8uA
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 4...24V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.9V/μs
Input offset voltage: 2.3mV
Kind of package: reel; tape
Input bias current: 8µA
Kind of integrated circuit: current sense
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| STGW30NC120HD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 256.85 грн |
| 3+ | 244.46 грн |
| 10+ | 215.56 грн |
| 25+ | 209.77 грн |
| STGYA50H120DF2 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 535W
Case: MAX247
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 535W
Case: MAX247
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 574.56 грн |
| T410-700T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 31A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 31A
Mounting: THT
Kind of package: tube
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.73 грн |
| 10+ | 65.74 грн |
| 25+ | 55.25 грн |
| 50+ | 48.64 грн |
| 100+ | 43.69 грн |
| SMBJ33CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 38.6V; 11.8A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 38.6V; 11.8A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 973 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.57 грн |
| 22+ | 19.16 грн |
| 25+ | 16.93 грн |
| 50+ | 12.80 грн |
| 100+ | 11.31 грн |
| 250+ | 9.66 грн |
| 500+ | 8.59 грн |
| STPST5H100UF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Leakage current: 11.5µA
Max. forward impulse current: 130A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Leakage current: 11.5µA
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 4800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.80 грн |
| 17+ | 24.53 грн |
| 20+ | 21.39 грн |
| 100+ | 15.94 грн |
| 500+ | 12.39 грн |
| 1000+ | 12.22 грн |
| STP11NK50ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 181.44 грн |
| 10+ | 102.41 грн |
| 25+ | 96.63 грн |
| 50+ | 91.67 грн |
| 100+ | 87.54 грн |
| TL432IL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| STM32L010K4T6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128B EEPROM; 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128B EEPROM; 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
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| STP28N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 292.62 грн |
| 10+ | 170.13 грн |
| STPS1045DEE-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 15A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 15A
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| STPS1045SF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
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| STPS1045SFY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| STGIPS10K60T |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM™
Case: SDIP-25L
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Power dissipation: 33W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM™
Case: SDIP-25L
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Power dissipation: 33W
Collector-emitter voltage: 600V
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| ESDCAN06-2BLY |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 230W; bidirectional,double; SOT23-3
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 35V
Breakdown voltage: 38V
Peak pulse power dissipation: 230W
Application: automotive industry; CAN
Semiconductor structure: bidirectional; double
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 230W; bidirectional,double; SOT23-3
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 0.1µA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 35V
Breakdown voltage: 38V
Peak pulse power dissipation: 230W
Application: automotive industry; CAN
Semiconductor structure: bidirectional; double
Version: ESD
на замовлення 7633 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.67 грн |
| 68+ | 6.11 грн |
| 87+ | 4.76 грн |
| 119+ | 3.49 грн |
| 125+ | 3.35 грн |
| 250+ | 3.05 грн |
| 500+ | 2.82 грн |
| LF90CPT-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Case: PPAK
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.45V
Output current: 0.5A
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...16V
Output voltage: 9V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Case: PPAK
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.45V
Output current: 0.5A
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...16V
Output voltage: 9V
на замовлення 2497 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.74 грн |
| 10+ | 72.60 грн |
| 25+ | 64.42 грн |
| 50+ | 58.64 грн |
| 100+ | 53.35 грн |
| 250+ | 47.08 грн |
| 500+ | 42.78 грн |
| 1000+ | 38.90 грн |
| SMAJ48A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 1215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 41+ | 10.24 грн |
| 50+ | 9.00 грн |
| 100+ | 8.51 грн |
| 250+ | 7.93 грн |
| 500+ | 7.60 грн |
| 1000+ | 7.27 грн |
| STM32G484PEI6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFBGA121; 1.71÷3.6VDC
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Kind of package: in-tray
Case: UFBGA121
Family: STM32G4
Operating temperature: -40...85°C
Supply voltage: 1.71...3.6V DC
Number of 32bit timers: 2
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Number of inputs/outputs: 86
Memory: 128kB SRAM; 512kB FLASH
Clock frequency: 170MHz
Kind of core: 32-bit
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFBGA121; 1.71÷3.6VDC
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Kind of package: in-tray
Case: UFBGA121
Family: STM32G4
Operating temperature: -40...85°C
Supply voltage: 1.71...3.6V DC
Number of 32bit timers: 2
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 12bit A/D converters: 42
Number of inputs/outputs: 86
Memory: 128kB SRAM; 512kB FLASH
Clock frequency: 170MHz
Kind of core: 32-bit
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x4; UART x2; USART x3; USB
Kind of architecture: Cortex M4
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| L5970ADTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uout: 1.235÷35VDC; 1.5A; SO8; SMD; 500kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output voltage: 1.235...35V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 4.4...36V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uout: 1.235÷35VDC; 1.5A; SO8; SMD; 500kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output voltage: 1.235...35V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 4.4...36V DC
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| STP11NK50Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 225.02 грн |
| 10+ | 136.27 грн |
| 25+ | 122.23 грн |
| 50+ | 113.15 грн |
| 100+ | 104.89 грн |
| STP11NK40Z | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.99 грн |
| 5+ | 109.84 грн |
| STP11NK40ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 185.00 грн |
| 5+ | 125.53 грн |
| 10+ | 100.76 грн |
| 25+ | 76.81 грн |
| 50+ | 67.72 грн |
| 100+ | 63.59 грн |
| STP14NK50Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 150W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 150W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 213.46 грн |
| 10+ | 133.79 грн |
| 25+ | 124.71 грн |
| 50+ | 118.10 грн |
| 100+ | 112.32 грн |
| STL22N60DM6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 42A; 102W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 42A
Power dissipation: 102W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 42A; 102W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 42A
Power dissipation: 102W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| LE33CZ-AP |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
на замовлення 1775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.13 грн |
| 16+ | 26.26 грн |
| 25+ | 24.61 грн |
| 100+ | 22.63 грн |
| 250+ | 21.47 грн |
| 500+ | 20.65 грн |
| 1000+ | 19.90 грн |
| STGP15M65DF2 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
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| LD39020ADTPU33R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.2A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39020
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 0.5...1.5%
Number of channels: 1
Input voltage: 1.5...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.2A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39020
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 0.5...1.5%
Number of channels: 1
Input voltage: 1.5...5.5V
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