Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (161827) > Сторінка 2676 з 2698
| Фото | Назва | Виробник | Інформація |
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| STM32F103VDT7TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 64kB SRAM; 384kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 16 Number of 16bit timers: 8 Family: STM32F1 Kind of package: reel; tape Kind of core: 32-bit |
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| STM32F103VEH6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; UFBGA100; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: UFBGA100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 64kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 16bit timers: 8 Family: STM32F1 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F103VEH7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; UFBGA100; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: UFBGA100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 64kB SRAM; 512kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 16 Number of 16bit timers: 8 Family: STM32F1 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F103VET7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 64kB SRAM; 512kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 16 Number of 16bit timers: 8 Family: STM32F1 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F103VET7TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 64kB SRAM; 512kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 16 Number of 16bit timers: 8 Family: STM32F1 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F103VFT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 96kB SRAM; 768kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 16bit timers: 14 Family: STM32F1 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F103VFT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 96kB SRAM; 768kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 16 Number of 16bit timers: 14 Family: STM32F1 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F103VGT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 80 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 96kB SRAM; 1MB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 16 Number of 16bit timers: 14 Family: STM32F1 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STM8AF5288TDX | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Mounting: SMD Interface: CAN; I2C; SPI; UART; USART Type of integrated circuit: STM8 microcontroller Integrated circuit features: AWU; Beeper; IWDG; WWDG Case: LQFP48 Family: STM8AF Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH Clock frequency: 24MHz Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM8AF5288TDY | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Mounting: SMD Interface: CAN; I2C; SPI; UART; USART Type of integrated circuit: STM8 microcontroller Integrated circuit features: AWU; Beeper; IWDG; WWDG Case: LQFP48 Family: STM8AF Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH Clock frequency: 24MHz Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM8AF5289TCX | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP64; 3÷5.5VDC; 16bit timers: 3 Mounting: SMD Interface: CAN; I2C; SPI; UART; USART Type of integrated circuit: STM8 microcontroller Integrated circuit features: AWU; Beeper; IWDG; WWDG Case: LQFP64 Family: STM8AF Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 16 Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH Clock frequency: 24MHz Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54FILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.3A; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Load current: 0.3A Max. forward voltage: 0.4V Max. forward impulse current: 1.25A Semiconductor structure: single diode Max. off-state voltage: 40V |
на замовлення 1218 шт: термін постачання 21-30 дні (днів) |
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SM4T28CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 4662 шт: термін постачання 21-30 дні (днів) |
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SMAJ20A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2V Max. forward impulse current: 54A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 2128 шт: термін постачання 21-30 дні (днів) |
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| STPS16170CB-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 170V; 8Ax2; reel,tape Mounting: SMD Type of diode: Schottky rectifying Leakage current: 15mA Max. forward voltage: 1V Load current: 8A x2 Max. load current: 20A Max. forward impulse current: 75A Max. off-state voltage: 170V Kind of package: reel; tape Semiconductor structure: common cathode; double Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STPS16170CG-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 170V; 8Ax2; reel,tape Mounting: SMD Type of diode: Schottky rectifying Leakage current: 15mA Max. forward voltage: 1V Load current: 8A x2 Max. load current: 20A Max. forward impulse current: 75A Max. off-state voltage: 170V Kind of package: reel; tape Semiconductor structure: common cathode; double Case: D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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Z0110MN 5AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 25mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 25mA Max. forward impulse current: 8A Mounting: SMD Kind of package: reel; tape |
на замовлення 883 шт: термін постачання 21-30 дні (днів) |
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TLVH431BIL5T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.25%; SOT23-5; reel,tape Type of integrated circuit: voltage reference source Tolerance: ±0.25% Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Maximum output current: 60mA Reference voltage: 1.24V Operating voltage: 1.24...18V Kind of package: reel; tape |
на замовлення 2280 шт: термін постачання 21-30 дні (днів) |
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STM8S208C6T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Mounting: SMD Type of integrated circuit: STM8 microcontroller Family: STM8S Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Kind of core: 8-bit Memory: 2kB EEPROM; 6kB RAM; 32kB FLASH Clock frequency: 24MHz Integrated circuit features: Beeper; IWDG; WWDG Interface: CAN; I2C; IrDA; SPI; UART x2 Case: LQFP48 |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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BAR42FILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.75A Kind of package: reel; tape |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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| STL80N10WF7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 60A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Pulsed drain current: 60A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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P6KE24A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Mounting: THT Semiconductor structure: unidirectional Leakage current: 0.5µA Tolerance: ±5% Max. forward impulse current: 18A Max. off-state voltage: 20V Breakdown voltage: 24V Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Case: DO15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STH30N65DM6-7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 112A Power dissipation: 223W Case: H2PAK7 Gate-source voltage: ±25V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP30N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 710V; 13A; Idm: 88A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 710V Drain current: 13A Pulsed drain current: 88A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 139mΩ Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STWA30N65DM6AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 112A Power dissipation: 284W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STP25N60M2-EP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A Polarisation: unipolar Gate charge: 29nC On-state resistance: 188mΩ Drain current: 11.3A Gate-source voltage: ±25V Power dissipation: 150W Pulsed drain current: 72A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Technology: MDmesh™ M2 Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STW25N60M2-EP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247 Polarisation: unipolar Gate charge: 29nC On-state resistance: 0.175Ω Drain current: 11.3A Gate-source voltage: ±25V Power dissipation: 150W Pulsed drain current: 72A Case: TO247 Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE68A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 16.3A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
на замовлення 1407 шт: термін постачання 21-30 дні (днів) |
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SMBJ13A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.2V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
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TMBYV10-60FILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 494 шт: термін постачання 21-30 дні (днів) |
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VNS14NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape Type of integrated circuit: power switch Output current: 12A Number of channels: 1 Mounting: SMD Case: SO8 On-state resistance: 35mΩ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ154A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 2.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2482 шт: термін постачання 21-30 дні (днів) |
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STW11NK100Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 8.3A Power dissipation: 230W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 472 шт: термін постачання 21-30 дні (днів) |
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T1235T-8T | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 95A Mounting: THT Kind of package: tube |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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TLVH431LIL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1.5%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Tolerance: ±1.5% Mounting: SMD Case: SOT23-3 Operating temperature: -40...125°C Maximum output current: 60mA Reference voltage: 1.24V Operating voltage: 1.24...18V Kind of package: reel; tape |
на замовлення 2878 шт: термін постачання 21-30 дні (днів) |
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TLVH431MIL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape; 60mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: SMD Case: SOT23-3 Operating temperature: -40...125°C Maximum output current: 60mA Reference voltage: 1.24V Operating voltage: 1.24...18V Kind of package: reel; tape |
на замовлення 1781 шт: термін постачання 21-30 дні (днів) |
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TLVH431AIL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.5%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Tolerance: ±0.5% Mounting: SMD Case: SOT23-3 Operating temperature: -40...125°C Maximum output current: 60mA Reference voltage: 1.24V Operating voltage: 1.24...18V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLVH431AIL5T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.5%; SOT23-5; reel,tape Type of integrated circuit: voltage reference source Tolerance: ±0.5% Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Maximum output current: 60mA Reference voltage: 1.24V Operating voltage: 1.24...18V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLVH431BICT | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.25%; SOT323-6L; reel,tape Type of integrated circuit: voltage reference source Tolerance: ±0.25% Mounting: SMD Case: SOT323-6L Operating temperature: -40...125°C Maximum output current: 60mA Reference voltage: 1.24V Operating voltage: 1.24...18V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLVH431AICT | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.5%; SOT323-6L; reel,tape Type of integrated circuit: voltage reference source Tolerance: ±0.5% Mounting: SMD Case: SOT323-6L Operating temperature: -40...125°C Maximum output current: 60mA Reference voltage: 1.24V Operating voltage: 1.24...18V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TIP32C | STMicroelectronics |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Mounting: THT Power dissipation: 40W Kind of package: tube |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
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TIP127 | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 65W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP147T | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 10A; 90W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Power dissipation: 90W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 356 шт: термін постачання 21-30 дні (днів) |
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STE145N65M5 | STMicroelectronics |
Category: Transistor modules MOSFETDescription: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 90A Power dissipation: 679W Case: ISOTOP Gate-source voltage: ±25V On-state resistance: 12mΩ Kind of package: tube Mechanical mounting: screw Semiconductor structure: single transistor Pulsed drain current: 572A Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STY145N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 87A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCTL35N65G2V | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 417W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 160A Power dissipation: 417W Case: PowerFLAT 8x8 Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTW35N65G2VAG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| A5973ADTR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; 1.5A; HSOP8; SMD; 500kHz; Topology: buck Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Type of integrated circuit: driver Case: HSOP8 Mounting: SMD Operating temperature: -40...150°C Output current: 1.5A Number of channels: 1 Operating voltage: 4...36V DC Frequency: 0.5MHz Topology: buck |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB14NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.6A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 48A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STGWA60V60DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ33A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 38.6V; 29A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 1814 шт: термін постачання 21-30 дні (днів) |
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STGP14NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 14A; 80W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 80W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 34.4nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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STGF14NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 7A; 28W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 28W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 34.4nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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SMBJ20CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 23.4V; 19.4A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 23.4V Max. forward impulse current: 19.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 8775 шт: термін постачання 21-30 дні (днів) |
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STP08CP05TTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Output current: 5...100mA Case: TSSOP16 Mounting: SMD Frequency: 30MHz Number of channels: 8 Operating temperature: -40...125°C Kind of package: reel; tape Integrated circuit features: shift register Output voltage: 1.3...20V Input voltage: 3...5.5V |
на замовлення 2481 шт: термін постачання 21-30 дні (днів) |
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| STWA35N65DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA35N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA35N65G2V-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 240W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SM6T24CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1874 шт: термін постачання 21-30 дні (днів) |
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VIPER06HSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; buck,flyback; AC/DC switcher,PWM controller; SSO10 Type of integrated circuit: driver Topology: buck; flyback Kind of integrated circuit: AC/DC switcher; PWM controller Case: SSO10 Output current: 1A Output voltage: 800V Number of channels: 1 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Operating voltage: 7...23.5V DC Frequency: 103...127kHz Kind of package: reel; tape Supply voltage: 12...23.5V Duty cycle factor: 0...80% |
товару немає в наявності |
В кошику од. на суму грн. |
| STM32F103VDT7TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 384kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 384kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F103VEH6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: UFBGA100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: UFBGA100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F103VEH7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: UFBGA100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: UFBGA100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F103VET7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F103VET7TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 64kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 8
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F103VFT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 96kB SRAM; 768kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 14
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 96kB SRAM; 768kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 14
Family: STM32F1
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F103VFT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 96kB SRAM; 768kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 14
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 96kB SRAM; 768kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 14
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F103VGT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 96kB SRAM; 1MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 14
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 96kB SRAM; 1MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 16
Number of 16bit timers: 14
Family: STM32F1
Kind of package: in-tray
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM8AF5288TDX |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Interface: CAN; I2C; SPI; UART; USART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Interface: CAN; I2C; SPI; UART; USART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
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| STM8AF5288TDY |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Interface: CAN; I2C; SPI; UART; USART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Interface: CAN; I2C; SPI; UART; USART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP48
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
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| STM8AF5289TCX |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP64; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Interface: CAN; I2C; SPI; UART; USART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP64
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 16
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP64; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Interface: CAN; I2C; SPI; UART; USART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: AWU; Beeper; IWDG; WWDG
Case: LQFP64
Family: STM8AF
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 16
Memory: 2kB EEPROM; 6kB RAM; 64kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
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| BAT54FILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.3A; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Load current: 0.3A
Max. forward voltage: 0.4V
Max. forward impulse current: 1.25A
Semiconductor structure: single diode
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.3A; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Load current: 0.3A
Max. forward voltage: 0.4V
Max. forward impulse current: 1.25A
Semiconductor structure: single diode
Max. off-state voltage: 40V
на замовлення 1218 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.23 грн |
| 99+ | 4.21 грн |
| 128+ | 3.25 грн |
| 500+ | 2.63 грн |
| 1000+ | 2.36 грн |
| SM4T28CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 4662 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.80 грн |
| 16+ | 26.92 грн |
| 18+ | 24.12 грн |
| 100+ | 17.18 грн |
| 250+ | 16.02 грн |
| SMAJ20A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 54A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 54A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 2128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.01 грн |
| 24+ | 17.84 грн |
| 26+ | 15.94 грн |
| 100+ | 11.31 грн |
| 250+ | 9.99 грн |
| 500+ | 9.17 грн |
| 1000+ | 8.42 грн |
| STPS16170CB-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 170V; 8Ax2; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 15mA
Max. forward voltage: 1V
Load current: 8A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 170V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: DPAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 170V; 8Ax2; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 15mA
Max. forward voltage: 1V
Load current: 8A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 170V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: DPAK
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| STPS16170CG-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 170V; 8Ax2; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 15mA
Max. forward voltage: 1V
Load current: 8A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 170V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 170V; 8Ax2; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 15mA
Max. forward voltage: 1V
Load current: 8A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 170V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
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| Z0110MN 5AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 25mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 25mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
на замовлення 883 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.91 грн |
| 19+ | 22.63 грн |
| 50+ | 15.94 грн |
| 100+ | 13.71 грн |
| 500+ | 9.91 грн |
| TLVH431BIL5T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.25%; SOT23-5; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.25%
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.25%; SOT23-5; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.25%
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
на замовлення 2280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.68 грн |
| 30+ | 14.04 грн |
| 34+ | 12.47 грн |
| 100+ | 10.65 грн |
| 250+ | 8.84 грн |
| 500+ | 8.18 грн |
| 1000+ | 7.68 грн |
| STM8S208C6T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Type of integrated circuit: STM8 microcontroller
Family: STM8S
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Kind of core: 8-bit
Memory: 2kB EEPROM; 6kB RAM; 32kB FLASH
Clock frequency: 24MHz
Integrated circuit features: Beeper; IWDG; WWDG
Interface: CAN; I2C; IrDA; SPI; UART x2
Case: LQFP48
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Mounting: SMD
Type of integrated circuit: STM8 microcontroller
Family: STM8S
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Kind of core: 8-bit
Memory: 2kB EEPROM; 6kB RAM; 32kB FLASH
Clock frequency: 24MHz
Integrated circuit features: Beeper; IWDG; WWDG
Interface: CAN; I2C; IrDA; SPI; UART x2
Case: LQFP48
на замовлення 208 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.59 грн |
| 10+ | 185.82 грн |
| BAR42FILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Kind of package: reel; tape
на замовлення 975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.12 грн |
| 77+ | 5.37 грн |
| 118+ | 3.53 грн |
| 500+ | 2.73 грн |
| STL80N10WF7 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 60A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 60A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 60A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 60A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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| P6KE24A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Mounting: THT
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20V
Breakdown voltage: 24V
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Case: DO15
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Mounting: THT
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20V
Breakdown voltage: 24V
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Case: DO15
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| STH30N65DM6-7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: ±25V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: ±25V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
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| STP30N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 710V; 13A; Idm: 88A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 710V; 13A; Idm: 88A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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| STWA30N65DM6AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 284W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 284W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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| STP25N60M2-EP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 188mΩ
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Technology: MDmesh™ M2
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 188mΩ
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Technology: MDmesh™ M2
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| STW25N60M2-EP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 0.175Ω
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO247
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 0.175Ω
Drain current: 11.3A
Gate-source voltage: ±25V
Power dissipation: 150W
Pulsed drain current: 72A
Case: TO247
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| 1.5KE68A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
на замовлення 1407 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.91 грн |
| 15+ | 28.08 грн |
| 16+ | 25.93 грн |
| 50+ | 23.12 грн |
| 100+ | 21.97 грн |
| 250+ | 20.40 грн |
| 500+ | 19.24 грн |
| 600+ | 18.91 грн |
| SMBJ13A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.79 грн |
| 31+ | 13.54 грн |
| 33+ | 12.72 грн |
| 50+ | 10.98 грн |
| 100+ | 10.24 грн |
| 500+ | 8.75 грн |
| 1000+ | 8.18 грн |
| 1200+ | 8.01 грн |
| TMBYV10-60FILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.24 грн |
| 24+ | 17.84 грн |
| 26+ | 16.27 грн |
| 100+ | 11.31 грн |
| 250+ | 9.33 грн |
| VNS14NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 35mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 35mΩ
Kind of package: reel; tape
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| SMBJ154A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2482 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.34 грн |
| 39+ | 10.74 грн |
| 42+ | 9.99 грн |
| 46+ | 9.08 грн |
| 75+ | 8.26 грн |
| 100+ | 8.09 грн |
| 150+ | 7.93 грн |
| STW11NK100Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 472 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 262.38 грн |
| 10+ | 215.56 грн |
| 30+ | 204.82 грн |
| 120+ | 191.60 грн |
| T1235T-8T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 95A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 95A
Mounting: THT
Kind of package: tube
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 109.40 грн |
| 50+ | 39.15 грн |
| 100+ | 37.08 грн |
| 200+ | 35.76 грн |
| TLVH431LIL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1.5%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±1.5%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1.5%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±1.5%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
на замовлення 2878 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 45+ | 9.25 грн |
| 49+ | 8.59 грн |
| 54+ | 7.68 грн |
| 100+ | 6.77 грн |
| 250+ | 6.36 грн |
| 500+ | 6.11 грн |
| 1000+ | 5.86 грн |
| TLVH431MIL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape; 60mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape; 60mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
на замовлення 1781 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.90 грн |
| 32+ | 13.05 грн |
| 36+ | 11.64 грн |
| 100+ | 9.99 грн |
| 250+ | 9.08 грн |
| 500+ | 8.59 грн |
| TLVH431AIL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
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| TLVH431AIL5T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23-5; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23-5; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
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| TLVH431BICT |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.25%; SOT323-6L; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.25%
Mounting: SMD
Case: SOT323-6L
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.25%; SOT323-6L; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.25%
Mounting: SMD
Case: SOT323-6L
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
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| TLVH431AICT |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT323-6L; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT323-6L
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT323-6L; reel,tape
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT323-6L
Operating temperature: -40...125°C
Maximum output current: 60mA
Reference voltage: 1.24V
Operating voltage: 1.24...18V
Kind of package: reel; tape
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| TIP32C |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Power dissipation: 40W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Power dissipation: 40W
Kind of package: tube
на замовлення 291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.03 грн |
| 11+ | 38.82 грн |
| 13+ | 33.61 грн |
| 50+ | 24.53 грн |
| 100+ | 21.31 грн |
| 250+ | 18.17 грн |
| TIP127 |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
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| TIP147T | ![]() |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 90W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 90W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 356 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.41 грн |
| 10+ | 81.76 грн |
| 50+ | 62.77 грн |
| 100+ | 56.16 грн |
| 250+ | 54.51 грн |
| STE145N65M5 |
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Виробник: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Power dissipation: 679W
Case: ISOTOP
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Kind of package: tube
Mechanical mounting: screw
Semiconductor structure: single transistor
Pulsed drain current: 572A
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Power dissipation: 679W
Case: ISOTOP
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Kind of package: tube
Mechanical mounting: screw
Semiconductor structure: single transistor
Pulsed drain current: 572A
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
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| STY145N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 87A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 87A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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| SCTL35N65G2V |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 417W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 417W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 417W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 417W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SCTW35N65G2VAG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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| A5973ADTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 1.5A; HSOP8; SMD; 500kHz; Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: driver
Case: HSOP8
Mounting: SMD
Operating temperature: -40...150°C
Output current: 1.5A
Number of channels: 1
Operating voltage: 4...36V DC
Frequency: 0.5MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 1.5A; HSOP8; SMD; 500kHz; Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: driver
Case: HSOP8
Mounting: SMD
Operating temperature: -40...150°C
Output current: 1.5A
Number of channels: 1
Operating voltage: 4...36V DC
Frequency: 0.5MHz
Topology: buck
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| STB14NK50ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 48A
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| STGWA60V60DF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| SMCJ33A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 1814 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.91 грн |
| 16+ | 26.59 грн |
| 17+ | 24.53 грн |
| 100+ | 17.76 грн |
| 250+ | 15.77 грн |
| 500+ | 14.54 грн |
| 1000+ | 14.04 грн |
| STGP14NC60KD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.58 грн |
| 10+ | 104.06 грн |
| 50+ | 88.37 грн |
| STGF14NC60KD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 28W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 28W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 34.4nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 147.64 грн |
| 10+ | 115.62 грн |
| SMBJ20CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 23.4V; 19.4A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.4V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 23.4V; 19.4A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.4V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 8775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.57 грн |
| 20+ | 21.56 грн |
| 25+ | 19.16 грн |
| 100+ | 14.87 грн |
| 250+ | 13.63 грн |
| 500+ | 11.81 грн |
| 1000+ | 9.00 грн |
| 2500+ | 7.93 грн |
| 5000+ | 7.27 грн |
| STP08CP05TTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 5...100mA
Case: TSSOP16
Mounting: SMD
Frequency: 30MHz
Number of channels: 8
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: shift register
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Category: LED drivers
Description: IC: driver; LED driver; TSSOP16; 5÷100mA; 1.3÷20V; Ch: 8; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 5...100mA
Case: TSSOP16
Mounting: SMD
Frequency: 30MHz
Number of channels: 8
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: shift register
Output voltage: 1.3...20V
Input voltage: 3...5.5V
на замовлення 2481 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.23 грн |
| 25+ | 44.60 грн |
| 100+ | 41.62 грн |
| 250+ | 38.65 грн |
| 1000+ | 37.16 грн |
| STWA35N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SCTWA35N65G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCTWA35N65G2V-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| SM6T24CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1874 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.12 грн |
| 35+ | 12.06 грн |
| 38+ | 11.15 грн |
| 50+ | 9.58 грн |
| 100+ | 9.08 грн |
| 250+ | 8.67 грн |
| VIPER06HSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; buck,flyback; AC/DC switcher,PWM controller; SSO10
Type of integrated circuit: driver
Topology: buck; flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SSO10
Output current: 1A
Output voltage: 800V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7...23.5V DC
Frequency: 103...127kHz
Kind of package: reel; tape
Supply voltage: 12...23.5V
Duty cycle factor: 0...80%
Category: Voltage regulators - PWM circuits
Description: IC: driver; buck,flyback; AC/DC switcher,PWM controller; SSO10
Type of integrated circuit: driver
Topology: buck; flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SSO10
Output current: 1A
Output voltage: 800V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7...23.5V DC
Frequency: 103...127kHz
Kind of package: reel; tape
Supply voltage: 12...23.5V
Duty cycle factor: 0...80%
товару немає в наявності
В кошику
од. на суму грн.
























