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STGF30H65DFB2 STMicroelectronics en.DM00686948.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGH30H65DFB-2AG STMicroelectronics stgh30h65dfb-2ag.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGWA20H65DFB2 STMicroelectronics stgwa20h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGWA30H65DFB2 STMicroelectronics en.DM00673147.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGWA40H65DFB STMicroelectronics stgwa40h65dfb.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA50H65DFB2 STMicroelectronics stgwa50h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
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STGWA60H65DFB STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41EDABAA56A5DE2D280C7&compId=STGWx60H65DFB.pdf?ci_sign=8b804906e12b081c9d06412ea3a8b4a3a1b23cb9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFB STMicroelectronics STGx%28x%2980H65DFB_Rev6_May2015.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFBAG STMicroelectronics stgwa80h65dfbag.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 535W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 453nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT40H65DFB STMicroelectronics STGWT40H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT80H65DFB STMicroelectronics en.DM00079449.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA100H65DFB2 STMicroelectronics stgwa100h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
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2N3055 2N3055 STMicroelectronics 2N3055.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 117W
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STF28N65M2 STF28N65M2 STMicroelectronics en.DM00150353.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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STF24N65M2 STF24N65M2 STMicroelectronics en.DM00121015.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
3+154.94 грн
10+125.49 грн
25+119.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STM8S003F3P6 STM8S003F3P6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCBB0E9656F81E28&compId=STM8S003F3-DTE.pdf?ci_sign=1fe1b3a1b6c6c4da539955aab81324de4dec1e3b Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 128B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Kind of core: 8-bit
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STF10N65K3 STF10N65K3 STMicroelectronics en.CD00235865.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 42nC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
3+156.66 грн
10+80.73 грн
50+69.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
3+146.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ULN2074B ULN2074B STMicroelectronics ULN2064B.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 1.5A
Output voltage: 50V
Number of channels: 4
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load
Input voltage: 30V
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
2+336.56 грн
3+280.54 грн
10+262.16 грн
25+252.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
P0102AL 5AA4 P0102AL 5AA4 STMicroelectronics P0102AL.pdf Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 0.2mA
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 7A
на замовлення 6912 шт:
термін постачання 21-30 дні (днів)
12+37.87 грн
18+23.50 грн
100+16.62 грн
250+14.55 грн
500+13.75 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
STF12N60M2 STMicroelectronics en.DM00187616.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
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STL40N10F7 STMicroelectronics en.DM00085663.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 40A
Power dissipation: 70W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF38N65M5 STF38N65M5 STMicroelectronics en.DM00113621.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
2+327.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STL24N60DM2 STMicroelectronics en.DM00109425.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M2 STMicroelectronics en.DM00087524.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M6 STMicroelectronics stl24n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF12N65M2 STMicroelectronics en.DM00152663.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
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STF7N60DM2 STMicroelectronics en.DM00407811.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
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STF7N60M2 STMicroelectronics en.DM00088735.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
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STL7N60M2 STMicroelectronics en.DM00157582.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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STP80N600K6 STMicroelectronics stp80n600k6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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STF11N60M2-EP STMicroelectronics en.DM00286212.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 12.4nC
Pulsed drain current: 30A
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STF7N65M2 STMicroelectronics en.DM00127830.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
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STF57N65M5 STMicroelectronics en.DM00049152.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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SCTH40N120G2V-7 STMicroelectronics scth40n120g2v-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTH40N120G2V7AG STMicroelectronics scth40n120g2v7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTW40N120G2V STMicroelectronics sctw40n120g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V STMicroelectronics Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V-4 STMicroelectronics Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Mounting: THT
Case: HIP247-4
On-state resistance: 0.1Ω
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 61nC
Power dissipation: 277W
Drain current: 36A
Drain-source voltage: 1.2kV
Pulsed drain current: 107A
Polarisation: unipolar
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В кошику  од. на суму  грн.
STM8L151F3P3 STM8L151F3P3 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCBAB15AE62CFE28&compId=STM8L151C2-DTE.pdf?ci_sign=5061f32d3441f345c92f45f40e655774b3f9f773 Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
Kind of core: 8-bit
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STGB18N40LZT4 STMicroelectronics en.CD00182201.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STP10N105K5 STMicroelectronics en.DM00134103.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STL115N10F7AG STMicroelectronics en.DM00333356.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Mounting: SMD
Case: PowerFLAT 5x6
On-state resistance: 6mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 72.5nC
Power dissipation: 136W
Drain current: 107A
Drain-source voltage: 100V
Pulsed drain current: 428A
Application: automotive industry
Polarisation: unipolar
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STGW28IH125DF STGW28IH125DF STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA2F87B639828E0C7&compId=STGW28IH125DF.pdf?ci_sign=4355d01effbf2c8fc70d0795c89b919a428d62a9 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
2+272.00 грн
3+226.99 грн
10+200.62 грн
30+180.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10NM60ND STMicroelectronics std10nm60nd.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 70W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 70W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 32A
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STF6N65K3 STMicroelectronics en.CD00297329.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.4A; Idm: 21.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 21.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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STF6N65M2 STMicroelectronics en.DM00128198.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
3+148.05 грн
10+98.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SCTW70N120G2V STMicroelectronics sctw70n120g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W
Gate-source voltage: -10...22V
Gate charge: 150nC
On-state resistance: 30mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 91A
Technology: SiC
Case: HIP247™
Pulsed drain current: 274A
Power dissipation: 547W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
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STM32F103ZGT6TR STM32F103ZGT6TR STMicroelectronics stm32f103zg.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP144; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: LQFP144
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; LCD controller; PoR; PWM
Memory: 96kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 3
Family: STM32F1
Kind of core: 32-bit
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
1+936.50 грн
5+818.46 грн
25+799.27 грн
50+780.09 грн
100+773.70 грн
В кошику  од. на суму  грн.
STD4N90K5 STMicroelectronics en.DM00339980.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 12A
Power dissipation: 60W
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STF4N90K5 STF4N90K5 STMicroelectronics en.DM00340030.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 16A
Power dissipation: 20W
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
3+153.21 грн
10+99.11 грн
25+80.73 грн
50+74.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF10N60DM2 STMicroelectronics en.DM00299235.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 32A
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STF10N60M2 STMicroelectronics en.DM00086387.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 30A
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STF6N80K5 STMicroelectronics en.DM00085454.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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STF6N90K5 STF6N90K5 STMicroelectronics en.DM00339599.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
3+175.59 грн
10+87.12 грн
50+80.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STL45N65M5 STMicroelectronics en.DM00058185.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.5A
Pulsed drain current: 90A
Power dissipation: 160W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF11N65M2 STMicroelectronics en.DM00105472.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 28A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
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STF11N65M5 STMicroelectronics en.DM00049307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 93 шт:
термін постачання 21-30 дні (днів)
4+111.04 грн
10+82.33 грн
50+79.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STF11NM60ND STF11NM60ND STMicroelectronics STX11NM60ND.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
2+226.38 грн
10+167.05 грн
25+155.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGF30H65DFB2 en.DM00686948.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGH30H65DFB-2AG stgh30h65dfb-2ag.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGWA20H65DFB2 stgwa20h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGWA30H65DFB2 en.DM00673147.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGWA40H65DFB stgwa40h65dfb.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA50H65DFB2 stgwa50h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
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STGWA60H65DFB pVersion=0046&contRep=ZT&docId=005056AB90B41EDABAA56A5DE2D280C7&compId=STGWx60H65DFB.pdf?ci_sign=8b804906e12b081c9d06412ea3a8b4a3a1b23cb9
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFB STGx%28x%2980H65DFB_Rev6_May2015.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFBAG stgwa80h65dfbag.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 535W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 453nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT40H65DFB STGWT40H65DFB.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT80H65DFB en.DM00079449.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA100H65DFB2 stgwa100h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
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2N3055 2N3055.pdf
2N3055
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 117W
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STF28N65M2 en.DM00150353.pdf
STF28N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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STF24N65M2 en.DM00121015.pdf
STF24N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+154.94 грн
10+125.49 грн
25+119.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STM8S003F3P6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCBB0E9656F81E28&compId=STM8S003F3-DTE.pdf?ci_sign=1fe1b3a1b6c6c4da539955aab81324de4dec1e3b
STM8S003F3P6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 128B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Kind of core: 8-bit
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STF10N65K3 en.CD00235865.pdf
STF10N65K3
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 42nC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+156.66 грн
10+80.73 грн
50+69.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+146.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ULN2074B ULN2064B.pdf
ULN2074B
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 1.5A
Output voltage: 50V
Number of channels: 4
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load
Input voltage: 30V
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+336.56 грн
3+280.54 грн
10+262.16 грн
25+252.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
P0102AL 5AA4 P0102AL.pdf
P0102AL 5AA4
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 0.2mA
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 7A
на замовлення 6912 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.87 грн
18+23.50 грн
100+16.62 грн
250+14.55 грн
500+13.75 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
STF12N60M2 en.DM00187616.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
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STL40N10F7 en.DM00085663.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 40A
Power dissipation: 70W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF38N65M5 en.DM00113621.pdf
STF38N65M5
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+327.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STL24N60DM2 en.DM00109425.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M2 en.DM00087524.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M6 stl24n60m6.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF12N65M2 en.DM00152663.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
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STF7N60DM2 en.DM00407811.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
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STF7N60M2 en.DM00088735.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
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STL7N60M2 en.DM00157582.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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STP80N600K6 stp80n600k6.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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STF11N60M2-EP en.DM00286212.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 12.4nC
Pulsed drain current: 30A
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STF7N65M2 en.DM00127830.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
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STF57N65M5 en.DM00049152.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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SCTH40N120G2V-7 scth40n120g2v-7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTH40N120G2V7AG scth40n120g2v7ag.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTW40N120G2V sctw40n120g2v.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V-4
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Mounting: THT
Case: HIP247-4
On-state resistance: 0.1Ω
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 61nC
Power dissipation: 277W
Drain current: 36A
Drain-source voltage: 1.2kV
Pulsed drain current: 107A
Polarisation: unipolar
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STM8L151F3P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCBAB15AE62CFE28&compId=STM8L151C2-DTE.pdf?ci_sign=5061f32d3441f345c92f45f40e655774b3f9f773
STM8L151F3P3
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
Kind of core: 8-bit
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STGB18N40LZT4 en.CD00182201.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STP10N105K5 en.DM00134103.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STL115N10F7AG en.DM00333356.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Mounting: SMD
Case: PowerFLAT 5x6
On-state resistance: 6mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 72.5nC
Power dissipation: 136W
Drain current: 107A
Drain-source voltage: 100V
Pulsed drain current: 428A
Application: automotive industry
Polarisation: unipolar
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STGW28IH125DF pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA2F87B639828E0C7&compId=STGW28IH125DF.pdf?ci_sign=4355d01effbf2c8fc70d0795c89b919a428d62a9
STGW28IH125DF
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+272.00 грн
3+226.99 грн
10+200.62 грн
30+180.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10NM60ND std10nm60nd.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 70W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 70W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 32A
товару немає в наявності
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STF6N65K3 en.CD00297329.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.4A; Idm: 21.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 21.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
STF6N65M2 en.DM00128198.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+148.05 грн
10+98.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SCTW70N120G2V sctw70n120g2v.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W
Gate-source voltage: -10...22V
Gate charge: 150nC
On-state resistance: 30mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 91A
Technology: SiC
Case: HIP247™
Pulsed drain current: 274A
Power dissipation: 547W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
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STM32F103ZGT6TR stm32f103zg.pdf
STM32F103ZGT6TR
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP144; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: LQFP144
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; LCD controller; PoR; PWM
Memory: 96kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 3
Family: STM32F1
Kind of core: 32-bit
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+936.50 грн
5+818.46 грн
25+799.27 грн
50+780.09 грн
100+773.70 грн
В кошику  од. на суму  грн.
STD4N90K5 en.DM00339980.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 12A
Power dissipation: 60W
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STF4N90K5 en.DM00340030.pdf
STF4N90K5
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 16A
Power dissipation: 20W
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+153.21 грн
10+99.11 грн
25+80.73 грн
50+74.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF10N60DM2 en.DM00299235.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 32A
товару немає в наявності
В кошику  од. на суму  грн.
STF10N60M2 en.DM00086387.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 30A
товару немає в наявності
В кошику  од. на суму  грн.
STF6N80K5 en.DM00085454.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
STF6N90K5 en.DM00339599.pdf
STF6N90K5
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+175.59 грн
10+87.12 грн
50+80.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STL45N65M5 en.DM00058185.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.5A
Pulsed drain current: 90A
Power dissipation: 160W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF11N65M2 en.DM00105472.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 28A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
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STF11N65M5 en.DM00049307.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 93 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+111.04 грн
10+82.33 грн
50+79.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STF11NM60ND STX11NM60ND.pdf
STF11NM60ND
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+226.38 грн
10+167.05 грн
25+155.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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