| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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IRF840APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 281 шт: термін постачання 14-30 дні (днів) |
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IRF840ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 485 шт: термін постачання 14-30 дні (днів) |
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IRF840ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRF840LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 498 шт: термін постачання 14-30 дні (днів) |
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IRF840SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 634 шт: термін постачання 14-30 дні (днів) |
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IRF840STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.6A Kind of package: 7 inch reel Reverse recovery time: 5ns Manufacturer standard package: 3000pcs. Power dissipation: 0.2W Features of semiconductor devices: small signal |
на замовлення 1011 шт: термін постачання 14-30 дні (днів) |
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1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1165 шт: термін постачання 14-30 дні (днів) |
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1N5822-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Manufacturer standard package: 1400pcs. |
на замовлення 881 шт: термін постачання 14-30 дні (днів) |
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BYV26C-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Max. forward impulse current: 30A Case: SOD57 Kind of package: Ammo Pack Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
на замовлення 1403 шт: термін постачання 14-30 дні (днів) |
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BYV26C-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Max. forward impulse current: 30A Case: SOD57 Kind of package: 10 inch reel Max. forward voltage: 1.3V Reverse recovery time: 30ns Manufacturer standard package: 5000pcs. Leakage current: 0.1mA |
на замовлення 2160 шт: термін постачання 14-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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IRF740APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 461 шт: термін постачання 14-30 дні (днів) |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1295 шт: термін постачання 14-30 дні (днів) |
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IRF740LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
на замовлення 377 шт: термін постачання 14-30 дні (днів) |
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IRF740PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1661 шт: термін постачання 14-30 дні (днів) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 410 шт: термін постачання 14-30 дні (днів) |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1451 шт: термін постачання 14-30 дні (днів) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 1802 шт: термін постачання 14-30 дні (днів) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 804 шт: термін постачання 14-30 дні (днів) |
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE Kind of package: 13 inch reel Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5817-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: 13 inch reel |
на замовлення 2730 шт: термін постачання 14-30 дні (днів) |
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1N5817-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: Ammo Pack |
на замовлення 6878 шт: термін постачання 14-30 дні (днів) |
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1N5819-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Max. forward voltage: 0.6V Max. off-state voltage: 40V Load current: 1A Kind of package: 13 inch reel Semiconductor structure: single diode Case: DO41 Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 25A |
на замовлення 1451 шт: термін постачання 14-30 дні (днів) |
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1N5819-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Max. forward voltage: 0.6V Max. off-state voltage: 40V Load current: 1A Kind of package: Ammo Pack Semiconductor structure: single diode Case: DO41 Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 25A |
на замовлення 1326 шт: термін постачання 14-30 дні (днів) |
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| BAV99-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Leakage current: 50µA Capacitance: 1.5pF Max. forward impulse current: 4.5A Manufacturer standard package: 3000pcs. Max. forward voltage: 1.25V Power dissipation: 0.3W Features of semiconductor devices: fast switching; small signal Kind of package: 7 inch reel |
на замовлення 13585 шт: термін постачання 14-30 дні (днів) |
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BAV99-HE3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Leakage current: 50µA Capacitance: 1.5pF Max. forward impulse current: 4.5A Manufacturer standard package: 3000pcs. Max. forward voltage: 1.25V Power dissipation: 0.3W Features of semiconductor devices: fast switching; small signal Application: automotive industry Kind of package: 7 inch reel |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 8pF Max. forward impulse current: 30A Case: DO41 Kind of package: 13 inch reel Max. forward voltage: 1.1V Manufacturer standard package: 5500pcs. Reverse recovery time: 2µs Features of semiconductor devices: glass passivated |
на замовлення 3460 шт: термін постачання 14-30 дні (днів) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Mounting: SMD Operating temperature: -55...125°C Dielectric: C0G (NP0) Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 50V Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% |
на замовлення 1550 шт: термін постачання 14-30 дні (днів) |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.24V Max. load current: 0.3A Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.2W Manufacturer standard package: 2500pcs. |
на замовлення 96186 шт: термін постачання 14-30 дні (днів) |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: 13 inch reel Power dissipation: 0.2W Manufacturer standard package: 10000pcs. Reverse recovery time: 5ns Leakage current: 2µA |
на замовлення 25452 шт: термін постачання 14-30 дні (днів) |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Resistance: 4.7kΩ Mounting: THT Power: 0.5W Operating temperature: -40...125°C Material constant B: 3977K Type of sensor: NTC thermistor |
на замовлення 6159 шт: термін постачання 14-30 дні (днів) |
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1.5KE47CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 793 шт: термін постачання 14-30 дні (днів) |
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SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHB25N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SIHG25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SIHP25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR10100-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 150A Kind of package: tube Manufacturer standard package: 50pcs. Max. forward voltage: 0.65V |
на замовлення 860 шт: термін постачання 14-30 дні (днів) |
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BZX85C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack Type of diode: Zener Mounting: THT Semiconductor structure: single diode Case: DO41 Power dissipation: 1.3W Kind of package: Ammo Pack Zener voltage: 12V Tolerance: ±5% |
на замовлення 4068 шт: термін постачання 14-30 дні (днів) |
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BZX85C5V1-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
на замовлення 6527 шт: термін постачання 14-30 дні (днів) |
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IRF540PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 110A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
на замовлення 418 шт: термін постачання 14-30 дні (днів) |
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IRF540SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLLR4400 | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC Wavelength: 612...625nm Viewing angle: 50° Type of diode: LED Number of terminals: 2 Luminosity: 0.63...1.2mcd LED diameter: 3mm LED lens: diffused; red LED colour: red Operating voltage: 1.9...2.4V DC LED current: 2mA Front: convex Terminal pitch: 2.54mm Mounting: THT |
на замовлення 2710 шт: термін постачання 14-30 дні (днів) |
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TLLR4400-AS12Z | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC Wavelength: 612...625nm Viewing angle: 25° Type of diode: LED Number of terminals: 2 Luminosity: 0.63...1.2mcd LED diameter: 3mm LED lens: diffused; red LED colour: red Operating voltage: 1.9...2.4V DC LED current: 2mA Front: convex Terminal pitch: 2.54mm Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLLR4401 | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2 Wavelength: 612...625nm Viewing angle: 50° Type of diode: LED Number of terminals: 2 Luminosity: 1...2mcd LED diameter: 3mm LED lens: diffused; red LED colour: red Operating voltage: 1.9...2.4V DC LED current: 2mA Front: convex Terminal pitch: 2.54mm Mounting: THT |
на замовлення 2935 шт: термін постачання 14-30 дні (днів) |
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BZX55C8V2-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
на замовлення 20469 шт: термін постачання 14-30 дні (днів) |
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VJ1206G107MXYTW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206 Type of capacitor: ceramic Capacitance: 100µF Tolerance: ±20% Mounting: SMD Operating temperature: -55...85°C Operating voltage: 6.3V Dielectric: X5R Case - inch: 1206 Case - mm: 3216 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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B340A-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel Mounting: SMD Max. forward voltage: 0.55V Max. off-state voltage: 40V Load current: 3A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Max. forward impulse current: 65A Manufacturer standard package: 1800pcs. |
на замовлення 6569 шт: термін постачання 14-30 дні (днів) |
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SS12-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.5V Max. off-state voltage: 20V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying |
на замовлення 2453 шт: термін постачання 14-30 дні (днів) |
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SMBJ24A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® |
на замовлення 6831 шт: термін постачання 14-30 дні (днів) |
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SMBJ24A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||||||
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US1M-E3/5AT | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 13 inch reel Manufacturer standard package: 7500pcs. Leakage current: 50µA |
на замовлення 7954 шт: термін постачання 14-30 дні (днів) |
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US1M-E3/61T | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Manufacturer standard package: 1800pcs. |
на замовлення 5791 шт: термін постачання 14-30 дні (днів) |
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US1MHE3_A/H | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Manufacturer standard package: 1800pcs. Application: automotive industry Leakage current: 50µA |
на замовлення 739 шт: термін постачання 14-30 дні (днів) |
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IRFZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1007 шт: термін постачання 14-30 дні (днів) |
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MBR1645-E3/45 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Max. forward impulse current: 150A Kind of package: tube Manufacturer standard package: 50pcs. |
на замовлення 788 шт: термін постачання 14-30 дні (днів) |
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UF5408-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO201AD; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: DO201AD Kind of package: 13 inch reel Max. forward voltage: 1V Reverse recovery time: 75ns Manufacturer standard package: 1400pcs. |
на замовлення 3261 шт: термін постачання 14-30 дні (днів) |
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BZX55C15-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: THT Tolerance: ±5% Case: DO35 Semiconductor structure: single diode Kind of package: Ammo Pack |
на замовлення 20849 шт: термін постачання 14-30 дні (днів) |
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BZX55C15-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; DO35; single diode; 14 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Case: DO35 Mounting: THT Tolerance: ±6% Semiconductor structure: single diode Kind of package: 14 inch reel Manufacturer standard package: 10000pcs. |
на замовлення 8062 шт: термін постачання 14-30 дні (днів) |
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| IRF840APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 281 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 143.13 грн |
| 10+ | 115.13 грн |
| 50+ | 96.50 грн |
| 100+ | 88.04 грн |
| 250+ | 77.03 грн |
| IRF840ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 485 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 216.97 грн |
| 5+ | 158.30 грн |
| 10+ | 139.67 грн |
| 50+ | 104.97 грн |
| 100+ | 93.96 грн |
| 250+ | 82.11 грн |
| IRF840ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF840LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 498 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 185.97 грн |
| 10+ | 111.74 грн |
| 25+ | 97.35 грн |
| 50+ | 88.04 грн |
| 100+ | 80.42 грн |
| 250+ | 71.95 грн |
| IRF840SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 634 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 175.03 грн |
| 10+ | 80.42 грн |
| 50+ | 66.87 грн |
| 100+ | 62.64 грн |
| 200+ | 59.26 грн |
| 500+ | 56.72 грн |
| IRF840STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BAS40-05-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
на замовлення 1011 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.85 грн |
| 57+ | 7.53 грн |
| 100+ | 4.30 грн |
| 500+ | 3.12 грн |
| 1000+ | 2.80 грн |
| 1.5KE27CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1165 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.61 грн |
| 100+ | 20.82 грн |
| 500+ | 18.45 грн |
| 1N5822-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
на замовлення 881 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.53 грн |
| 20+ | 22.18 грн |
| 50+ | 20.82 грн |
| 100+ | 20.15 грн |
| 500+ | 15.24 грн |
| BYV26C-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
на замовлення 1403 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.81 грн |
| 12+ | 36.23 грн |
| 100+ | 29.04 грн |
| 500+ | 25.06 грн |
| 1000+ | 23.79 грн |
| BYV26C-TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Leakage current: 0.1mA
на замовлення 2160 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 18+ | 24.55 грн |
| 25+ | 23.53 грн |
| 100+ | 22.26 грн |
| 250+ | 21.33 грн |
| 500+ | 20.57 грн |
| 1.5KE400A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.43 грн |
| 10+ | 42.33 грн |
| 100+ | 37.50 грн |
| 250+ | 35.89 грн |
| IRF740APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 461 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 175.03 грн |
| 10+ | 90.58 грн |
| 50+ | 80.42 грн |
| 100+ | 73.65 грн |
| 250+ | 66.03 грн |
| IRF740ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1295 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 204.20 грн |
| 5+ | 143.06 грн |
| 10+ | 121.05 грн |
| 25+ | 97.35 грн |
| 50+ | 86.34 грн |
| 100+ | 77.88 грн |
| 250+ | 72.80 грн |
| 1000+ | 68.57 грн |
| IRF740LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 260.73 грн |
| 10+ | 124.44 грн |
| 25+ | 101.58 грн |
| 50+ | 89.73 грн |
| 100+ | 79.57 грн |
| 250+ | 71.11 грн |
| IRF740PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1661 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 150.42 грн |
| 10+ | 92.27 грн |
| 40+ | 79.57 грн |
| 50+ | 77.88 грн |
| 100+ | 71.11 грн |
| 250+ | 63.49 грн |
| 500+ | 59.26 грн |
| 1000+ | 54.18 грн |
| IRF740SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 410 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.14 грн |
| 10+ | 158.30 грн |
| 25+ | 133.75 грн |
| 50+ | 117.67 грн |
| 100+ | 106.66 грн |
| 150+ | 100.73 грн |
| 250+ | 94.81 грн |
| IRF740STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 1.5KE18CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1451 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.55 грн |
| 9+ | 49.10 грн |
| 11+ | 40.55 грн |
| 25+ | 30.64 грн |
| 50+ | 26.07 грн |
| 100+ | 24.38 грн |
| 1.5KE180CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 1802 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 56.52 грн |
| 10+ | 42.92 грн |
| 100+ | 29.80 грн |
| 500+ | 24.63 грн |
| 1000+ | 22.86 грн |
| 1400+ | 22.18 грн |
| 1.5KE18A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 804 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.26 грн |
| 12+ | 36.15 грн |
| 50+ | 28.36 грн |
| 100+ | 26.16 грн |
| 250+ | 23.70 грн |
| 500+ | 22.86 грн |
| P6KE200A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: 13 inch reel
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 1N5817-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
на замовлення 2730 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.17 грн |
| 23+ | 18.96 грн |
| 33+ | 13.21 грн |
| 100+ | 11.43 грн |
| 250+ | 10.41 грн |
| 500+ | 8.89 грн |
| 1000+ | 8.47 грн |
| 1N5817-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
на замовлення 6878 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.23 грн |
| 36+ | 11.85 грн |
| 100+ | 9.48 грн |
| 500+ | 7.96 грн |
| 1000+ | 7.20 грн |
| 3000+ | 6.09 грн |
| 6000+ | 5.50 грн |
| 1N5819-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
на замовлення 1451 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.00 грн |
| 22+ | 19.98 грн |
| 25+ | 17.61 грн |
| 100+ | 12.87 грн |
| 500+ | 9.23 грн |
| 1000+ | 8.04 грн |
| 1N5819-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
на замовлення 1326 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.14 грн |
| 33+ | 13.12 грн |
| 100+ | 9.06 грн |
| 500+ | 7.20 грн |
| 1000+ | 6.52 грн |
| BAV99-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
на замовлення 13585 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 53+ | 8.04 грн |
| 65+ | 6.59 грн |
| 100+ | 4.82 грн |
| 500+ | 3.30 грн |
| 1000+ | 2.84 грн |
| 3000+ | 2.18 грн |
| BAV99-HE3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Application: automotive industry
Kind of package: 7 inch reel
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Application: automotive industry
Kind of package: 7 inch reel
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 42.33 грн |
| 1N4007GP-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
на замовлення 3460 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.88 грн |
| 50+ | 17.01 грн |
| 100+ | 15.41 грн |
| 250+ | 12.95 грн |
| 500+ | 10.84 грн |
| 1000+ | 8.63 грн |
| VJ1206A100KXAAC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
на замовлення 1550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.30 грн |
| 100+ | 6.86 грн |
| 500+ | 6.04 грн |
| 1000+ | 5.74 грн |
| BAS85-GS08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 2500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 2500pcs.
на замовлення 96186 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 42+ | 10.24 грн |
| 100+ | 7.61 грн |
| 500+ | 5.88 грн |
| 1000+ | 5.15 грн |
| 2500+ | 4.17 грн |
| 5000+ | 3.43 грн |
| 10000+ | 3.17 грн |
| BAS85-GS18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 13 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 10000pcs.
Reverse recovery time: 5ns
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 13 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 10000pcs.
Reverse recovery time: 5ns
Leakage current: 2µA
на замовлення 25452 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.85 грн |
| 76+ | 5.59 грн |
| 100+ | 4.63 грн |
| 500+ | 4.04 грн |
| 1000+ | 3.85 грн |
| 2500+ | 3.50 грн |
| 10000+ | 2.90 грн |
| 20000+ | 2.53 грн |
| NTCLE100E3472JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Mounting: THT
Power: 0.5W
Operating temperature: -40...125°C
Material constant B: 3977K
Type of sensor: NTC thermistor
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Mounting: THT
Power: 0.5W
Operating temperature: -40...125°C
Material constant B: 3977K
Type of sensor: NTC thermistor
на замовлення 6159 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 30.08 грн |
| 18+ | 24.55 грн |
| 19+ | 22.60 грн |
| 25+ | 19.98 грн |
| 50+ | 18.20 грн |
| 100+ | 16.76 грн |
| 200+ | 15.75 грн |
| 1.5KE47CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 793 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.23 грн |
| 12+ | 36.06 грн |
| 50+ | 32.00 грн |
| 100+ | 30.39 грн |
| 250+ | 28.78 грн |
| 500+ | 27.34 грн |
| SIHA25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| SIHB25N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHG25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MBR10100-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward voltage: 0.65V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward voltage: 0.65V
на замовлення 860 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.05 грн |
| 10+ | 45.12 грн |
| BZX85C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Case: DO41
Power dissipation: 1.3W
Kind of package: Ammo Pack
Zener voltage: 12V
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Case: DO41
Power dissipation: 1.3W
Kind of package: Ammo Pack
Zener voltage: 12V
Tolerance: ±5%
на замовлення 4068 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 49+ | 8.80 грн |
| 54+ | 7.87 грн |
| 100+ | 6.33 грн |
| 500+ | 4.96 грн |
| 1000+ | 4.46 грн |
| BZX85C5V1-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
на замовлення 6527 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 50+ | 8.63 грн |
| 56+ | 7.62 грн |
| 100+ | 6.70 грн |
| 500+ | 5.27 грн |
| 1000+ | 4.81 грн |
| 2500+ | 4.34 грн |
| 5000+ | 4.06 грн |
| IRF540PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.07 грн |
| 10+ | 72.80 грн |
| 50+ | 71.11 грн |
| 100+ | 66.03 грн |
| 250+ | 61.80 грн |
| IRF540SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| TLLR4400 |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
на замовлення 2710 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.73 грн |
| 26+ | 16.51 грн |
| 28+ | 15.24 грн |
| 50+ | 14.22 грн |
| 100+ | 13.29 грн |
| 250+ | 12.19 грн |
| 500+ | 11.26 грн |
| 1000+ | 10.41 грн |
| TLLR4400-AS12Z |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 25°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 25°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 2 шт
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од. на суму грн.
| TLLR4401 |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 1...2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 1...2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
на замовлення 2935 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 22+ | 20.15 грн |
| 25+ | 17.95 грн |
| 50+ | 16.42 грн |
| 100+ | 14.98 грн |
| 250+ | 13.21 грн |
| 500+ | 12.11 грн |
| 1000+ | 10.92 грн |
| BZX55C8V2-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
на замовлення 20469 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.47 грн |
| 136+ | 3.13 грн |
| 179+ | 2.37 грн |
| 250+ | 2.01 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.62 грн |
| VJ1206G107MXYTW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Tolerance: ±20%
Mounting: SMD
Operating temperature: -55...85°C
Operating voltage: 6.3V
Dielectric: X5R
Case - inch: 1206
Case - mm: 3216
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Tolerance: ±20%
Mounting: SMD
Operating temperature: -55...85°C
Operating voltage: 6.3V
Dielectric: X5R
Case - inch: 1206
Case - mm: 3216
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| B340A-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Mounting: SMD
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 65A
Manufacturer standard package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Mounting: SMD
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 65A
Manufacturer standard package: 1800pcs.
на замовлення 6569 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.55 грн |
| 21+ | 20.40 грн |
| 100+ | 12.78 грн |
| 500+ | 9.40 грн |
| 1000+ | 8.13 грн |
| SS12-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
на замовлення 2453 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.29 грн |
| 84+ | 5.08 грн |
| 93+ | 4.57 грн |
| 106+ | 4.02 грн |
| SMBJ24A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
на замовлення 6831 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.23 грн |
| 50+ | 13.63 грн |
| 100+ | 11.34 грн |
| 250+ | 8.13 грн |
| 500+ | 6.01 грн |
| 750+ | 5.76 грн |
| SMBJ24A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| US1M-E3/5AT |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
Leakage current: 50µA
на замовлення 7954 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 28+ | 15.49 грн |
| 50+ | 12.70 грн |
| 100+ | 11.68 грн |
| 500+ | 9.06 грн |
| 5000+ | 5.42 грн |
| 7500+ | 4.74 грн |
| US1M-E3/61T |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
на замовлення 5791 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 21+ | 20.32 грн |
| 50+ | 10.16 грн |
| 100+ | 7.70 грн |
| 1800+ | 5.93 грн |
| US1MHE3_A/H |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Application: automotive industry
Leakage current: 50µA
на замовлення 739 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.47 грн |
| 27+ | 16.00 грн |
| 100+ | 14.14 грн |
| 500+ | 12.53 грн |
| IRFZ44PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1007 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 150.42 грн |
| 5+ | 111.74 грн |
| 10+ | 99.89 грн |
| 25+ | 87.19 грн |
| 40+ | 81.27 грн |
| 50+ | 77.88 грн |
| 100+ | 71.11 грн |
| 500+ | 58.41 грн |
| 1000+ | 53.33 грн |
| MBR1645-E3/45 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
на замовлення 788 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.07 грн |
| 10+ | 57.22 грн |
| 50+ | 44.53 грн |
| 100+ | 39.62 грн |
| 250+ | 32.76 грн |
| 500+ | 29.46 грн |
| UF5408-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1V
Reverse recovery time: 75ns
Manufacturer standard package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1V
Reverse recovery time: 75ns
Manufacturer standard package: 1400pcs.
на замовлення 3261 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.70 грн |
| 11+ | 41.65 грн |
| 15+ | 29.29 грн |
| 100+ | 27.43 грн |
| 500+ | 23.87 грн |
| 1400+ | 20.32 грн |
| BZX55C15-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: Ammo Pack
на замовлення 20849 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.03 грн |
| 68+ | 6.26 грн |
| 10000+ | 2.94 грн |
| BZX55C15-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; 14 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer standard package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; 14 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer standard package: 10000pcs.
на замовлення 8062 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.85 грн |
| 52+ | 8.30 грн |
| 68+ | 6.26 грн |
| 113+ | 3.77 грн |
| 250+ | 2.86 грн |
| 500+ | 2.45 грн |

































