| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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VJ1210Y105KXBTW1BC | VISHAY |
 Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 1uF; 100V; X7R; ±10%; SMD; 1210 Type of capacitor: ceramic Capacitance: 1µF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1210 Case - mm: 3225 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||
| VS-2N684 | VISHAY |
Category: Stud mounting thyristors Description: Thyristor: stud; 150V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk Type of thyristor: stud Max. off-state voltage: 150V Max. load current: 25A Load current: 16A Gate current: 40mA Case: TO48; TO208AA Mounting: screw Max. forward impulse current: 0.145kA Semiconductor structure: anode to stud Manufacturer series: VS-2Nxxxx Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| VS-2N685 | VISHAY |
Category: Stud mounting thyristors Description: Thyristor: stud; 200V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk Type of thyristor: stud Max. off-state voltage: 200V Max. load current: 25A Load current: 16A Gate current: 40mA Case: TO48; TO208AA Mounting: screw Max. forward impulse current: 0.145kA Semiconductor structure: anode to stud Manufacturer series: VS-2Nxxxx Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| VS-2N686 | VISHAY |
Category: Stud mounting thyristors Description: Thyristor: stud; 250V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk Type of thyristor: stud Max. off-state voltage: 250V Max. load current: 25A Load current: 16A Gate current: 40mA Case: TO48; TO208AA Mounting: screw Max. forward impulse current: 0.145kA Semiconductor structure: anode to stud Manufacturer series: VS-2Nxxxx Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| VS-2N687 | VISHAY |
Category: Stud mounting thyristors Description: Thyristor: stud; 300V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk Type of thyristor: stud Max. off-state voltage: 300V Max. load current: 25A Load current: 16A Gate current: 40mA Case: TO48; TO208AA Mounting: screw Max. forward impulse current: 0.145kA Semiconductor structure: anode to stud Manufacturer series: VS-2Nxxxx Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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V20100S-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 900mV Mounting: THT Max. forward impulse current: 250A Max. forward voltage: 0.9V Max. off-state voltage: 0.1kV Load current: 20A Semiconductor structure: single diode Leakage current: 0.5mA Case: TO220AB Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||
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VS-6CWQ04FNTR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Kind of package: 13 inch reel Manufacturer standard package: 2000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-6CWQ04FNHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; tube Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Kind of package: tube Manufacturer standard package: 75pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-6CWQ04FNTRHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Kind of package: 13 inch reel Manufacturer standard package: 2000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-6CWQ04FNTRL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Kind of package: 13 inch reel Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-6CWQ04FNTRLHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Kind of package: 13 inch reel Manufacturer standard package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-6CWQ04FNTRR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Kind of package: 13 inch reel Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-6CWQ04FNTRRHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Kind of package: 13 inch reel Manufacturer standard package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBR2545CT-E3/45 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.73V Mounting: THT Max. forward impulse current: 150A Manufacturer standard package: 50pcs. Max. forward voltage: 0.73V Max. off-state voltage: 45V Heatsink thickness: 1.14...1.39mm Load current: 15A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying |
на замовлення 524 шт: термін постачання 14-30 дні (днів) |
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V30100SG-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220AB; Ufmax: 1V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 30A Semiconductor structure: single diode Case: TO220AB Max. forward voltage: 1V Max. forward impulse current: 250A Leakage current: 0.35mA |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||
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RCA0805430KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 430kΩ; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 430kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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CRCW0805430KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 430kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 430kΩ Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 2.2x1.4x0.6mm Quantity in set/package: 5000pcs. |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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CRCW0805430KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 430kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 430kΩ Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 2x1.25x0.45mm Quantity in set/package: 5000pcs. |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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SMBJ150CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 167V; 2.5A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Breakdown voltage: 167V Max. forward impulse current: 2.5A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||
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CRCW25122K21FKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 2.21kΩ; SMD; 2512; 1W; ±1%; CRCW2512; 500V Type of resistor: thick film Resistance: 2.21kΩ Mounting: SMD Case - inch: 2512 Case - mm: 6332 Power: 1W Tolerance: ±1% Operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Manufacturer series: CRCW2512 |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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BZD27C160P-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.8W; 160V; SMD; DO219AB,SMF; single diode; BZD27C Type of diode: Zener Power dissipation: 0.8W Zener voltage: 160V Mounting: SMD Case: DO219AB; SMF Semiconductor structure: single diode Manufacturer series: BZD27C Tolerance: ±5% Manufacturer standard package: 3000pcs. Kind of package: 7 inch reel |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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BZD27C160P-HE3_A08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.8W; 160V; SMD; DO219AB,SMF; single diode; BZD27C Type of diode: Zener Power dissipation: 0.8W Zener voltage: 160V Mounting: SMD Case: DO219AB; SMF Semiconductor structure: single diode Manufacturer series: BZD27C Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||
| SQJ403BEEP-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 68W; PowerPAK® SO8 Case: PowerPAK® SO8 On-state resistance: 7mΩ Mounting: SMD Power dissipation: 68W Gate charge: 164nC Polarisation: unipolar Drain current: -30A Kind of channel: enhancement Drain-source voltage: -30V Application: automotive industry Type of transistor: P-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
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VS-60CTQ045-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 720mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.72V Kind of package: tube Manufacturer standard package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| P6KE10CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 9.5V; 41.4A; bidirectional; DO15,DO204AC; 600W; P6KE Type of diode: TVS Max. off-state voltage: 8.55V Breakdown voltage: 9.5V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 20µA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| P6KE7.5CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 7.5V; 53.1A; bidirectional; DO15,DO204AC; 600W; P6KE Type of diode: TVS Max. off-state voltage: 6.4V Breakdown voltage: 7.5V Max. forward impulse current: 53.1A Semiconductor structure: bidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 0.6kW Manufacturer series: P6KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BZT55C24-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||||||
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BZT55C24-GS18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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TLZ24D-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Case: MiniMELF; SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||||||
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TZM5252B-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: MiniMELF; SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||||||
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TZM5252B-GS18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: MiniMELF; SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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TZMB24-GS18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: MiniMELF; SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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TZMC24-GS18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: MiniMELF; SOD80 Semiconductor structure: single diode Kind of package: 13 inch reel Manufacturer standard package: 10000pcs. |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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TZMC24-M-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: MiniMELF; SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||||||
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TZMC24-M-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: MiniMELF; SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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TZQ5252B-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||||||
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TZQ5252B-GS18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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TZS4709-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD80 Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||||||
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VS-3C16ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 104A Kind of package: tube |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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VS-3C12ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 83A Kind of package: tube |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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VS-3C20CP07L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.46V Max. forward impulse current: 60A Kind of package: tube |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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VS-3C06ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 42A Kind of package: tube |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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VS-3C08ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 54A Kind of package: tube Technology: SiC |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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VS-3C10ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.46V Max. forward impulse current: 60A Kind of package: tube |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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VS-3C16CP07L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Mounting: THT Max. forward voltage: 1.5V Technology: SiC Max. off-state voltage: 650V Load current: 8A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO247-3 Type of diode: Schottky rectifying Max. forward impulse current: 54A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-3C40CP07L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.5V Max. forward impulse current: 110A Kind of package: tube |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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VS-3C12ET07S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 83A Kind of package: reel; tape |
на замовлення 795 шт: термін постачання 14-30 дні (днів) |
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VS-C06ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 39A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MXP120A250FL-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.5Ω Pulsed drain current: 21A Power dissipation: 22W Gate charge: 20.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MXP120A045FE-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W Technology: MaxSiC™; SiC Mounting: SMD Case: TO263-7 Kind of package: reel; tape Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 31A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 99mΩ Pulsed drain current: 98A Power dissipation: 85W Gate charge: 75.6nC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||
| MXP120A045FL-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 31A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 99mΩ Pulsed drain current: 98A Power dissipation: 91W Gate charge: 75.6nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MXP120A045FW-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain current: 31A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 99mΩ Pulsed drain current: 98A Power dissipation: 91W Gate charge: 75.6nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MXP120A080FE-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W Technology: MaxSiC™; SiC Mounting: SMD Case: TO263-7 Kind of package: reel; tape Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 19A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.175Ω Pulsed drain current: 60A Power dissipation: 56W Gate charge: 47.3nC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||
| MXP120A080FL-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 18A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.175Ω Pulsed drain current: 58A Power dissipation: 56W Gate charge: 47.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MXP120A080FW-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.175Ω Pulsed drain current: 58A Power dissipation: 56W Gate charge: 47.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MXP120A250FW-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.5Ω Pulsed drain current: 21A Power dissipation: 22W Gate charge: 20.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| VS-3C10CP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 30µA Power dissipation: 83W |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| VS-3C10EP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 60µA Power dissipation: 115W |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| VS-3C10ET12T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 60µA Power dissipation: 94W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
| VS-3C15EP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 75µA Power dissipation: 150W |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| VJ1210Y105KXBTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1uF; 100V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 1µF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1uF; 100V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 1µF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| VS-2N684 |
|
Виробник: VISHAY
Category: Stud mounting thyristors
Description: Thyristor: stud; 150V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 150V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
Category: Stud mounting thyristors
Description: Thyristor: stud; 150V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 150V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
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| VS-2N685 |
|
Виробник: VISHAY
Category: Stud mounting thyristors
Description: Thyristor: stud; 200V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 200V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
Category: Stud mounting thyristors
Description: Thyristor: stud; 200V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 200V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
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В кошику
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| VS-2N686 |
|
Виробник: VISHAY
Category: Stud mounting thyristors
Description: Thyristor: stud; 250V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 250V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
Category: Stud mounting thyristors
Description: Thyristor: stud; 250V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 250V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
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| VS-2N687 |
|
Виробник: VISHAY
Category: Stud mounting thyristors
Description: Thyristor: stud; 300V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 300V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
Category: Stud mounting thyristors
Description: Thyristor: stud; 300V; Ifmax: 25A; 16A; Igt: 40mA; TO208AA,TO48; bulk
Type of thyristor: stud
Max. off-state voltage: 300V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48; TO208AA
Mounting: screw
Max. forward impulse current: 0.145kA
Semiconductor structure: anode to stud
Manufacturer series: VS-2Nxxxx
Kind of package: bulk
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В кошику
од. на суму грн.
| V20100S-E3/4W |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 900mV
Mounting: THT
Max. forward impulse current: 250A
Max. forward voltage: 0.9V
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: TO220AB
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 900mV
Mounting: THT
Max. forward impulse current: 250A
Max. forward voltage: 0.9V
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: TO220AB
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| VS-6CWQ04FNTR-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 2000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 2000pcs.
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од. на суму грн.
| VS-6CWQ04FNHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: tube
Manufacturer standard package: 75pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: tube
Manufacturer standard package: 75pcs.
Application: automotive industry
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| VS-6CWQ04FNTRHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 2000pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 2000pcs.
Application: automotive industry
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| VS-6CWQ04FNTRL-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
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| VS-6CWQ04FNTRLHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
Application: automotive industry
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| VS-6CWQ04FNTRR-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
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од. на суму грн.
| VS-6CWQ04FNTRRHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3.5Ax2; 13 inch reel
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Kind of package: 13 inch reel
Manufacturer standard package: 3000pcs.
Application: automotive industry
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| MBR2545CT-E3/45 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Max. forward impulse current: 150A
Manufacturer standard package: 50pcs.
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Heatsink thickness: 1.14...1.39mm
Load current: 15A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Max. forward impulse current: 150A
Manufacturer standard package: 50pcs.
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Heatsink thickness: 1.14...1.39mm
Load current: 15A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
на замовлення 524 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 121.61 грн |
| 10+ | 69.62 грн |
| 50+ | 65.37 грн |
| 100+ | 62.83 грн |
| 500+ | 56.04 грн |
| V30100SG-E3/4W |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220AB; Ufmax: 1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 250A
Leakage current: 0.35mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220AB; Ufmax: 1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 250A
Leakage current: 0.35mA
товару немає в наявності
Мінімальне замовлення: 8000 шт
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| RCA0805430KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 430kΩ; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 430kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 430kΩ; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 430kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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Мінімальне замовлення: 5000 шт
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| CRCW0805430KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 430kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 430kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 2.2x1.4x0.6mm
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 430kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 430kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 2.2x1.4x0.6mm
Quantity in set/package: 5000pcs.
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Мінімальне замовлення: 5000 шт
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| CRCW0805430KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 430kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 430kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 430kΩ; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 430kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 5000pcs.
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Мінімальне замовлення: 5000 шт
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| SMBJ150CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167V; 2.5A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167V; 2.5A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3200 шт
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| CRCW25122K21FKTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 2.21kΩ; SMD; 2512; 1W; ±1%; CRCW2512; 500V
Type of resistor: thick film
Resistance: 2.21kΩ
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW2512
Category: SMD resistors
Description: Resistor: thick film; 2.21kΩ; SMD; 2512; 1W; ±1%; CRCW2512; 500V
Type of resistor: thick film
Resistance: 2.21kΩ
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW2512
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.51 грн |
| 100+ | 5.23 грн |
| 350+ | 2.80 грн |
| 960+ | 2.65 грн |
| BZD27C160P-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.8W; 160V; SMD; DO219AB,SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 160V
Mounting: SMD
Case: DO219AB; SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
Tolerance: ±5%
Manufacturer standard package: 3000pcs.
Kind of package: 7 inch reel
Category: SMD Zener diodes
Description: Diode: Zener; 0.8W; 160V; SMD; DO219AB,SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 160V
Mounting: SMD
Case: DO219AB; SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
Tolerance: ±5%
Manufacturer standard package: 3000pcs.
Kind of package: 7 inch reel
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Мінімальне замовлення: 3000 шт
В кошику
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| BZD27C160P-HE3_A08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.8W; 160V; SMD; DO219AB,SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 160V
Mounting: SMD
Case: DO219AB; SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.8W; 160V; SMD; DO219AB,SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 160V
Mounting: SMD
Case: DO219AB; SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
Application: automotive industry
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Мінімальне замовлення: 30000 шт
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| SQJ403BEEP-T1_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 68W; PowerPAK® SO8
Case: PowerPAK® SO8
On-state resistance: 7mΩ
Mounting: SMD
Power dissipation: 68W
Gate charge: 164nC
Polarisation: unipolar
Drain current: -30A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 68W; PowerPAK® SO8
Case: PowerPAK® SO8
On-state resistance: 7mΩ
Mounting: SMD
Power dissipation: 68W
Gate charge: 164nC
Polarisation: unipolar
Drain current: -30A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET
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Мінімальне замовлення: 3000 шт
В кошику
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| VS-60CTQ045-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 720mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 720mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Kind of package: tube
Manufacturer standard package: 50pcs.
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| P6KE10CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 41.4A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 9.5V; 41.4A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
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Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| P6KE7.5CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 7.5V; 53.1A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53.1A
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 7.5V; 53.1A; bidirectional; DO15,DO204AC; 600W; P6KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53.1A
Semiconductor structure: bidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
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| BZT55C24-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 12500 шт
В кошику
од. на суму грн.
| BZT55C24-GS18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TLZ24D-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Case: MiniMELF; SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 12500 шт
В кошику
од. на суму грн.
| TZM5252B-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 12500 шт
В кошику
од. на суму грн.
| TZM5252B-GS18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TZMB24-GS18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TZMC24-GS18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| TZMC24-M-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 12500 шт
В кошику
од. на суму грн.
| TZMC24-M-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TZQ5252B-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 12500 шт
В кошику
од. на суму грн.
| TZQ5252B-GS18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TZS4709-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD80
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 12500 шт
В кошику
од. на суму грн.
| VS-3C16ET07T-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 104A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 104A
Kind of package: tube
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 396.82 грн |
| 5+ | 367.62 грн |
| VS-3C12ET07T-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: tube
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 330.99 грн |
| 10+ | 265.74 грн |
| VS-3C20CP07L-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 483.68 грн |
| 5+ | 433.00 грн |
| VS-3C06ET07T-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: tube
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 210.29 грн |
| 10+ | 138.39 грн |
| VS-3C08ET07T-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
Technology: SiC
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.58 грн |
| 10+ | 181.69 грн |
| VS-3C10ET07T-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 274.30 грн |
| 10+ | 224.99 грн |
| VS-3C16CP07L-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
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| VS-3C40CP07L-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1002.10 грн |
| VS-3C12ET07S2L-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: reel; tape
на замовлення 795 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 419.68 грн |
| 5+ | 327.72 грн |
| 10+ | 291.21 грн |
| 25+ | 264.04 грн |
| VS-C06ET07T-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 39A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 39A
Kind of package: tube
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| MXP120A250FL-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
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В кошику
од. на суму грн.
| MXP120A045FE-T1GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 85W
Gate charge: 75.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 85W
Gate charge: 75.6nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MXP120A045FL-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
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од. на суму грн.
| MXP120A045FW-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
товару немає в наявності
В кошику
од. на суму грн.
| MXP120A080FE-T1GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| MXP120A080FL-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
товару немає в наявності
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од. на суму грн.
| MXP120A080FW-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
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| MXP120A250FW-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
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| VS-3C10CP12L-M3 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 30µA
Power dissipation: 83W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 30µA
Power dissipation: 83W
товару немає в наявності
Мінімальне замовлення: 500 шт
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од. на суму грн.
| VS-3C10EP12L-M3 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 115W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 115W
товару немає в наявності
Мінімальне замовлення: 500 шт
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од. на суму грн.
| VS-3C10ET12T-M3 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 94W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 94W
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| VS-3C15EP12L-M3 |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 75µA
Power dissipation: 150W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 75µA
Power dissipation: 150W
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.