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CRD250DA12E-XM3 CRD250DA12E-XM3 Wolfspeed, Inc. Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf Description: 250KW XM3 3PHASE INVERTER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB425M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+667794.12 грн
В кошику  од. на суму  грн.
CRD25DA12N-FMC CRD25DA12N-FMC Wolfspeed, Inc. Wolfspeed25kWINVERTER.pdf Description: EVAL BOARD FOR CCB021M12FM3T
Packaging: Box
Voltage - Input: 1kV
Type: Power Management
Region Utilized: International
Remote Capability: No
Power - Output Continuous: 25000 W
Function: Motor Controller/Driver
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3T
Primary Attributes: Three-Phase Inverter
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+340339.15 грн
В кошику  од. на суму  грн.
CRD300DA12E-XM3 CRD300DA12E-XM3 Wolfspeed, Inc. Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+714119.02 грн
В кошику  од. на суму  грн.
CRD600DA12E-XM3 CRD600DA12E-XM3 Wolfspeed, Inc. crd600da12e_xm3_data_sheet.pdf Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2142547.93 грн
В кошику  од. на суму  грн.
CSD01060A CSD01060A Wolfspeed, Inc. Wolfspeed_CSD01060A_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 8416 шт:
термін постачання 21-31 дні (днів)
3+122.55 грн
50+94.86 грн
100+78.04 грн
500+61.98 грн
1000+52.59 грн
2000+49.96 грн
5000+47.29 грн
Мінімальне замовлення: 3
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CSD01060E CSD01060E Wolfspeed, Inc. Wolfspeed_CSD01060E_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
3+149.61 грн
75+48.97 грн
150+48.11 грн
525+44.10 грн
1050+41.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CSD01060E-TR CSD01060E-TR Wolfspeed, Inc. Wolfspeed_CSD01060E_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+46.56 грн
5000+42.17 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CSD01060E-TR CSD01060E-TR Wolfspeed, Inc. Wolfspeed_CSD01060E_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 11296 шт:
термін постачання 21-31 дні (днів)
2+162.35 грн
10+100.08 грн
100+67.88 грн
500+50.75 грн
1000+46.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CSD02060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 3.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD02060G Wolfspeed, Inc. Description: DIODE SIL CARB 600V 3.5A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD04060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 7A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD06060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD06060G Wolfspeed, Inc. Description: DIODE SIL CARB 600V 10A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD10060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD10060G Wolfspeed, Inc. CSD02060G%20SCHEM.jpg Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD20060D Wolfspeed, Inc. CSD20030D%20SCHEM.jpg Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CVFD20065A Wolfspeed, Inc. Description: DIODE SIL CARB 650V 57A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Current - Average Rectified (Io): 57A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
товару немає в наявності
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E3D08065G E3D08065G Wolfspeed, Inc. E3D08065G.pdf Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
1+326.28 грн
10+281.86 грн
100+230.92 грн
В кошику  од. на суму  грн.
E3D20065D E3D20065D Wolfspeed, Inc. Wolfspeed_E3D20065D_data_sheet.pdf Description: DIODE ARRAY SIC 650V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 28A
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
1+748.06 грн
30+556.21 грн
В кошику  од. на суму  грн.
E3D30065D E3D30065D Wolfspeed, Inc. Wolfspeed_E3D30065D_data_sheet.pdf Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 429 шт:
термін постачання 21-31 дні (днів)
1+924.73 грн
30+537.05 грн
120+459.56 грн
В кошику  од. на суму  грн.
E3M0016120K E3M0016120K Wolfspeed, Inc. Wolfspeed_E3M0016120K_data_sheet.pdf Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
1+6562.25 грн
10+5275.38 грн
30+4970.35 грн
120+4409.11 грн
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E3M0021120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0021120J2_data_sheet.pdf Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
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E3M0021120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0021120J2_data_sheet.pdf Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
1+2650.84 грн
10+1893.00 грн
100+1684.11 грн
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E3M0021120K E3M0021120K Wolfspeed, Inc. Wolfspeed_E3M0021120K_data_sheet.pdf Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
1+2965.19 грн
30+1936.81 грн
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E3M0032120J2-TR E3M0032120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0032120J2_data_sheet.pdf Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
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E3M0032120J2-TR E3M0032120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0032120J2_data_sheet.pdf Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 729 шт:
термін постачання 21-31 дні (днів)
1+2274.42 грн
10+1609.15 грн
100+1388.11 грн
В кошику  од. на суму  грн.
E3M0040120J2-TR E3M0040120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0040120J2_data_sheet.pdf Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E3M0040120J2-TR E3M0040120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0040120J2_data_sheet.pdf Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
1+1704.62 грн
10+1183.14 грн
100+955.79 грн
В кошику  од. на суму  грн.
E3M0045065K E3M0045065K Wolfspeed, Inc. Wolfspeed_E3M0045065K_Data_Sheet.pdf Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
на замовлення 809 шт:
термін постачання 21-31 дні (днів)
1+1542.28 грн
30+934.70 грн
120+842.96 грн
В кошику  од. на суму  грн.
E3M0060065D E3M0060065D Wolfspeed, Inc. wolfspeed_E3M0060065D_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
на замовлення 356 шт:
термін постачання 21-31 дні (днів)
1+1149.94 грн
10+1017.54 грн
100+859.40 грн
В кошику  од. на суму  грн.
E3M0060065K E3M0060065K Wolfspeed, Inc. wolfspeed_E3M0060065K_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+1201.67 грн
10+1063.44 грн
100+898.12 грн
В кошику  од. на суму  грн.
E3M0075120D E3M0075120D Wolfspeed, Inc. E3M0075120D.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
1+1567.75 грн
10+1329.51 грн
100+1149.88 грн
500+977.94 грн
В кошику  од. на суму  грн.
E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
1+1318.66 грн
10+903.20 грн
100+696.60 грн
В кошику  од. на суму  грн.
E3M0075120K E3M0075120K Wolfspeed, Inc. Wolfspeed_E3M0075120K_data_sheet.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
1+1616.29 грн
30+983.31 грн
В кошику  од. на суму  грн.
E3M0120090J E3M0120090J Wolfspeed, Inc. Wolfspeed_E3M0120090J_data_sheet.pdf Description: 900V 120M AUTOMOTIVE SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Grade: Automotive
на замовлення 512 шт:
термін постачання 21-31 дні (днів)
1+728.96 грн
50+588.70 грн
В кошику  од. на суму  грн.
E3M0160120D E3M0160120D Wolfspeed, Inc. Wolfspeed_E3M0160120D_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 773 шт:
термін постачання 21-31 дні (днів)
1+742.49 грн
10+492.29 грн
100+366.34 грн
В кошику  од. на суму  грн.
E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E3M0160120K Wolfspeed, Inc. Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max): 115W
Supplier Device Package: TO-247-4L
Drain to Source Voltage (Vdss): 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
2+177.47 грн
10+141.77 грн
100+112.89 грн
500+89.64 грн
1000+76.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
E4D10120A E4D10120A Wolfspeed, Inc. Wolfspeed_E4D10120A_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
1+1002.72 грн
50+591.90 грн
100+579.73 грн
В кошику  од. на суму  грн.
E4D20120A E4D20120A Wolfspeed, Inc. Wolfspeed_E4D20120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
1+1543.07 грн
50+1169.87 грн
В кошику  од. на суму  грн.
E4D20120D E4D20120D Wolfspeed, Inc. Wolfspeed_E4D20120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
1+1488.96 грн
30+1231.91 грн
120+1169.87 грн
В кошику  од. на суму  грн.
E4D20120G E4D20120G Wolfspeed, Inc. Wolfspeed_E4D20120G_data_sheet.pdf Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2253 шт:
термін постачання 21-31 дні (днів)
1+1245.44 грн
50+1020.54 грн
В кошику  од. на суму  грн.
E4M0013120K E4M0013120K Wolfspeed, Inc. Wolfspeed_E4M0013120K_data_sheet.pdf Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+6520.86 грн
30+5607.66 грн
В кошику  од. на суму  грн.
E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+2950.07 грн
10+2315.79 грн
100+2085.88 грн
В кошику  од. на суму  грн.
E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
1+1919.49 грн
10+1459.33 грн
100+1306.33 грн
В кошику  од. на суму  грн.
E4M0025075K1 E4M0025075K1 Wolfspeed, Inc. Wolfspeed_E4M0025075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E6D10065A E6D10065A Wolfspeed, Inc. Wolfspeed_E6D10065A_data_sheet.pdf Description: SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Qualification: AEC-Q101
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
1+322.30 грн
10+203.08 грн
50+157.93 грн
100+134.69 грн
250+133.69 грн
В кошику  од. на суму  грн.
E6D10065G E6D10065G Wolfspeed, Inc. 215575 Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+385.97 грн
10+242.85 грн
50+188.46 грн
100+160.59 грн
250+143.06 грн
500+132.27 грн
1000+124.11 грн
В кошику  од. на суму  грн.
E6D20065A E6D20065A Wolfspeed, Inc. Wolfspeed_E6D20065A_data_sheet.pdf Description: DIODE SIC 650V TO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E6D20065D E6D20065D Wolfspeed, Inc. 215559 Description: DIODE SIC 650V 34A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
E6D20065G E6D20065G Wolfspeed, Inc. 215585 Description: DIODE SIC 650V 68A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
E6D20065H E6D20065H Wolfspeed, Inc. Wolfspeed_E6D20065H_data_sheet.pdf Description: DIODE SIC 650V TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 59A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
E6D30065D E6D30065D Wolfspeed, Inc. 215564 Description: DIODE SIC 650V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+867.43 грн
10+573.22 грн
30+492.96 грн
120+393.34 грн
270+379.36 грн
В кошику  од. на суму  грн.
EAB450M12XM3 EAB450M12XM3 Wolfspeed, Inc. Wolfspeed_EAB450M12XM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Part Status: Active
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+75433.21 грн
В кошику  од. на суму  грн.
CRD250DA12E-XM3 Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf
CRD250DA12E-XM3
Виробник: Wolfspeed, Inc.
Description: 250KW XM3 3PHASE INVERTER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB425M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+667794.12 грн
В кошику  од. на суму  грн.
CRD25DA12N-FMC Wolfspeed25kWINVERTER.pdf
CRD25DA12N-FMC
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CCB021M12FM3T
Packaging: Box
Voltage - Input: 1kV
Type: Power Management
Region Utilized: International
Remote Capability: No
Power - Output Continuous: 25000 W
Function: Motor Controller/Driver
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3T
Primary Attributes: Three-Phase Inverter
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+340339.15 грн
В кошику  од. на суму  грн.
CRD300DA12E-XM3 Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf
CRD300DA12E-XM3
Виробник: Wolfspeed, Inc.
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+714119.02 грн
В кошику  од. на суму  грн.
CRD600DA12E-XM3 crd600da12e_xm3_data_sheet.pdf
CRD600DA12E-XM3
Виробник: Wolfspeed, Inc.
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2142547.93 грн
В кошику  од. на суму  грн.
CSD01060A Wolfspeed_CSD01060A_data_sheet.pdf
CSD01060A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 8416 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.55 грн
50+94.86 грн
100+78.04 грн
500+61.98 грн
1000+52.59 грн
2000+49.96 грн
5000+47.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CSD01060E Wolfspeed_CSD01060E_data_sheet.pdf
CSD01060E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.61 грн
75+48.97 грн
150+48.11 грн
525+44.10 грн
1050+41.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CSD01060E-TR Wolfspeed_CSD01060E_data_sheet.pdf
CSD01060E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+46.56 грн
5000+42.17 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CSD01060E-TR Wolfspeed_CSD01060E_data_sheet.pdf
CSD01060E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 11296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.35 грн
10+100.08 грн
100+67.88 грн
500+50.75 грн
1000+46.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CSD02060A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товару немає в наявності
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CSD02060G
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товару немає в наявності
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CSD04060A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 7A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товару немає в наявності
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CSD06060A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD06060G
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD10060A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD10060G CSD02060G%20SCHEM.jpg
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CSD20060D CSD20030D%20SCHEM.jpg
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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CVFD20065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 57A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Current - Average Rectified (Io): 57A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
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E3D08065G E3D08065G.pdf
E3D08065G
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+326.28 грн
10+281.86 грн
100+230.92 грн
В кошику  од. на суму  грн.
E3D20065D Wolfspeed_E3D20065D_data_sheet.pdf
E3D20065D
Виробник: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 650V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 28A
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+748.06 грн
30+556.21 грн
В кошику  од. на суму  грн.
E3D30065D Wolfspeed_E3D30065D_data_sheet.pdf
E3D30065D
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 429 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+924.73 грн
30+537.05 грн
120+459.56 грн
В кошику  од. на суму  грн.
E3M0016120K Wolfspeed_E3M0016120K_data_sheet.pdf
E3M0016120K
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6562.25 грн
10+5275.38 грн
30+4970.35 грн
120+4409.11 грн
В кошику  од. на суму  грн.
E3M0021120J2-TR Wolfspeed_E3M0021120J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
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E3M0021120J2-TR Wolfspeed_E3M0021120J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2650.84 грн
10+1893.00 грн
100+1684.11 грн
В кошику  од. на суму  грн.
E3M0021120K Wolfspeed_E3M0021120K_data_sheet.pdf
E3M0021120K
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2965.19 грн
30+1936.81 грн
В кошику  од. на суму  грн.
E3M0032120J2-TR Wolfspeed_E3M0032120J2_data_sheet.pdf
E3M0032120J2-TR
Виробник: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
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E3M0032120J2-TR Wolfspeed_E3M0032120J2_data_sheet.pdf
E3M0032120J2-TR
Виробник: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 729 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2274.42 грн
10+1609.15 грн
100+1388.11 грн
В кошику  од. на суму  грн.
E3M0040120J2-TR Wolfspeed_E3M0040120J2_data_sheet.pdf
E3M0040120J2-TR
Виробник: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
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E3M0040120J2-TR Wolfspeed_E3M0040120J2_data_sheet.pdf
E3M0040120J2-TR
Виробник: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1704.62 грн
10+1183.14 грн
100+955.79 грн
В кошику  од. на суму  грн.
E3M0045065K Wolfspeed_E3M0045065K_Data_Sheet.pdf
E3M0045065K
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
на замовлення 809 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1542.28 грн
30+934.70 грн
120+842.96 грн
В кошику  од. на суму  грн.
E3M0060065D wolfspeed_E3M0060065D_data_sheet.pdf
E3M0060065D
Виробник: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
на замовлення 356 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1149.94 грн
10+1017.54 грн
100+859.40 грн
В кошику  од. на суму  грн.
E3M0060065K wolfspeed_E3M0060065K_data_sheet.pdf
E3M0060065K
Виробник: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1201.67 грн
10+1063.44 грн
100+898.12 грн
В кошику  од. на суму  грн.
E3M0075120D E3M0075120D.pdf
E3M0075120D
Виробник: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1567.75 грн
10+1329.51 грн
100+1149.88 грн
500+977.94 грн
В кошику  од. на суму  грн.
E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
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E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1318.66 грн
10+903.20 грн
100+696.60 грн
В кошику  од. на суму  грн.
E3M0075120K Wolfspeed_E3M0075120K_data_sheet.pdf
E3M0075120K
Виробник: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1616.29 грн
30+983.31 грн
В кошику  од. на суму  грн.
E3M0120090J Wolfspeed_E3M0120090J_data_sheet.pdf
E3M0120090J
Виробник: Wolfspeed, Inc.
Description: 900V 120M AUTOMOTIVE SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Grade: Automotive
на замовлення 512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+728.96 грн
50+588.70 грн
В кошику  од. на суму  грн.
E3M0160120D Wolfspeed_E3M0160120D_data_sheet.pdf
E3M0160120D
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
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E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Виробник: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 773 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+742.49 грн
10+492.29 грн
100+366.34 грн
В кошику  од. на суму  грн.
E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Виробник: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
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E3M0160120K
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max): 115W
Supplier Device Package: TO-247-4L
Drain to Source Voltage (Vdss): 1200 V
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.47 грн
10+141.77 грн
100+112.89 грн
500+89.64 грн
1000+76.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
E4D10120A Wolfspeed_E4D10120A_data_sheet.pdf
E4D10120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1002.72 грн
50+591.90 грн
100+579.73 грн
В кошику  од. на суму  грн.
E4D20120A Wolfspeed_E4D20120A_data_sheet.pdf
E4D20120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1543.07 грн
50+1169.87 грн
В кошику  од. на суму  грн.
E4D20120D Wolfspeed_E4D20120D_data_sheet.pdf
E4D20120D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1488.96 грн
30+1231.91 грн
120+1169.87 грн
В кошику  од. на суму  грн.
E4D20120G Wolfspeed_E4D20120G_data_sheet.pdf
E4D20120G
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2253 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1245.44 грн
50+1020.54 грн
В кошику  од. на суму  грн.
E4M0013120K Wolfspeed_E4M0013120K_data_sheet.pdf
E4M0013120K
Виробник: Wolfspeed, Inc.
Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6520.86 грн
30+5607.66 грн
В кошику  од. на суму  грн.
E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
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E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2950.07 грн
10+2315.79 грн
100+2085.88 грн
В кошику  од. на суму  грн.
E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
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E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1919.49 грн
10+1459.33 грн
100+1306.33 грн
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E4M0025075K1 Wolfspeed_E4M0025075K1_data_sheet.pdf
E4M0025075K1
Виробник: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
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E6D10065A Wolfspeed_E6D10065A_data_sheet.pdf
E6D10065A
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Qualification: AEC-Q101
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+322.30 грн
10+203.08 грн
50+157.93 грн
100+134.69 грн
250+133.69 грн
В кошику  од. на суму  грн.
E6D10065G 215575
E6D10065G
Виробник: Wolfspeed, Inc.
Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+385.97 грн
10+242.85 грн
50+188.46 грн
100+160.59 грн
250+143.06 грн
500+132.27 грн
1000+124.11 грн
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E6D20065A Wolfspeed_E6D20065A_data_sheet.pdf
E6D20065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V TO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
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E6D20065D 215559
E6D20065D
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 34A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
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E6D20065G 215585
E6D20065G
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 68A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
товару немає в наявності
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E6D20065H Wolfspeed_E6D20065H_data_sheet.pdf
E6D20065H
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 59A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
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E6D30065D 215564
E6D30065D
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+867.43 грн
10+573.22 грн
30+492.96 грн
120+393.34 грн
270+379.36 грн
В кошику  од. на суму  грн.
EAB450M12XM3 Wolfspeed_EAB450M12XM3_data_sheet.pdf
EAB450M12XM3
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Part Status: Active
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+75433.21 грн
В кошику  од. на суму  грн.
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