Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (591) > Сторінка 7 з 10
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| CMPA2060035F1 | Wolfspeed, Inc. |
Description: 35W, GAN MMIC POWER AMPLIFIER, 2Packaging: Tray Package / Case: 440219 Mounting Type: Chassis Mount Frequency: 2GHz ~ 6GHz RF Type: General Purpose Voltage - Supply: 28V Gain: 27.5dB Test Frequency: 6GHz Supplier Device Package: 440219 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CMPA2060035F1-AMP | Wolfspeed, Inc. |
Description: AMPLIFIER, 2.0-6.0GHZ, CMPA20600Packaging: Bulk For Use With/Related Products: CMPA2060035F1 Frequency: 2GHz ~ 6GHz Type: MOSFET Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CMPA2560025F-TB | Wolfspeed, Inc. |
Description: BOARD DEMO AMP CKT CMPA2560025F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CMPA2735030S-AMP1 | Wolfspeed, Inc. |
Description: 2.7-3.5GHZ, AMP W/ CMPA2735030SPackaging: Bulk For Use With/Related Products: CMPA2735030S Frequency: 2.7GHz ~ 3.5GHz Type: Amplifier Supplied Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| CMPA2935150S-AMP1 | Wolfspeed, Inc. |
Description: 2.9-3.5GHZ, AMP W/ CMPA2935150S Part Status: Active Supplied Contents: Board(s) Type: Amplifier Frequency: 2.9GHz ~ 3.5GHz For Use With/Related Products: CMPA2935150S Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| CMPA2935250S-AMP1 | Wolfspeed, Inc. |
Description: AMPLIFIER, 3.1-3.5GHZ, CMPA29352 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CMPA3135060S-AMP1 | Wolfspeed, Inc. |
Description: 3.1-3.5GHZ, AMP W/ CMPA3135060SSupplied Contents: Board(s) Type: Amplifier Frequency: 3.1GHz ~ 3.5GHz For Use With/Related Products: CMPA3135060S Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CMPA5259050F-AMP | Wolfspeed, Inc. |
Description: AMPLIFIER, 5.2-5.9GHZ, GAN MMICPart Status: Active Supplied Contents: Board(s) Type: Amplifier Frequency: 5.2GHz ~ 5.9GHz For Use With/Related Products: CMPA5259050F Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CMPA5259050S | Wolfspeed, Inc. |
Description: IC AMP RADAR 5GHZ-5.9GHZ 32QFNPart Status: Active Supplier Device Package: 32-QFN (5x5) Test Frequency: 5.9GHz Gain: 23.6dB Voltage - Supply: 28V RF Type: Radar Frequency: 5GHz ~ 5.9GHz Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CMPA5259050S-AMP1 | Wolfspeed, Inc. |
Description: CMPA5259050S DEV BOARDPart Status: Active Supplied Contents: Board(s) Type: Amplifier Frequency: 5GHz ~ 5.9GHz For Use With/Related Products: CMPA5259050S Packaging: Bulk |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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CMPA5259080S | Wolfspeed, Inc. |
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 5GHz ~ 5.9GHz RF Type: Radar Voltage - Supply: 40V Gain: 27dB Current - Supply: 350mA Test Frequency: 5.9GHz Supplier Device Package: 48-QFN (7x7) Part Status: Active |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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CMPA5259080S | Wolfspeed, Inc. |
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 5GHz ~ 5.9GHz RF Type: Radar Voltage - Supply: 40V Gain: 27dB Current - Supply: 350mA Test Frequency: 5.9GHz Supplier Device Package: 48-QFN (7x7) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CMPA5259080S-AMP1 | Wolfspeed, Inc. |
Description: 5.2-5.9GHZ, AMP W/ CMPA5259080SPackaging: Bulk For Use With/Related Products: CMPA5259080S Frequency: 5GHz ~ 5.9GHz Type: Amplifier Supplied Contents: Board(s) Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| CMPA5585025D | Wolfspeed, Inc. |
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIEPackaging: Tray Package / Case: Die Mounting Type: Surface Mount Frequency: 5.5GHz ~ 8.5GHz RF Type: General Purpose Voltage - Supply: 28V Gain: 30dB Supplier Device Package: Die |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CMPA5585025F | Wolfspeed, Inc. |
Description: IC AMP GPS 5.5GHZ-8.5GHZ 440208 Supplier Device Package: 440208 Test Frequency: 8.4GHz Gain: 22dB RF Type: General Purpose Frequency: 5.5GHz ~ 8.5GHz Mounting Type: Flange Mount Package / Case: 440208 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CMPA5585025F-AMP | Wolfspeed, Inc. |
Description: AMPLIFIER, 5.5-8.5GHZ, CMPA55850 Packaging: Box For Use With/Related Products: CMPA5585025F Frequency: 5.5GHz ~ 8.5GHz Type: Amplifier Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CMPA5585025F-TB | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CMPA5585025F Packaging: Bulk For Use With/Related Products: CMPA5585025F Frequency: 5.5GHz ~ 8.5GHz Type: Amplifier Supplied Contents: Partially Populated Board - Main IC Not Included |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CMPA5585030D | Wolfspeed, Inc. |
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIEPackaging: Tray Package / Case: Die Mounting Type: Surface Mount Frequency: 5.5GHz ~ 8.5GHz RF Type: General Purpose Voltage - Supply: 28V Gain: 30dB Supplier Device Package: Die |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CMPA5585030F-TB | Wolfspeed, Inc. |
Description: TEST BOARDPackaging: Bulk For Use With/Related Products: CMPA5585030 Frequency: 5.5GHz ~ 8.5GHz Type: Amplifier Supplied Contents: Partially Populated Board - Main IC Not Included |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CMPA601C025F-AMP | Wolfspeed, Inc. |
Description: AMPLIFIER, 6.0-12.0GHZ, CMPA601CPackaging: Box For Use With/Related Products: CMPA601C025F Frequency: 6GHz ~ 12GHz Type: Amplifier Supplied Contents: Board(s) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CMPA801B025F-AMP | Wolfspeed, Inc. |
Description: CMPA801B025F DEV BOARD WITH HEMT |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CMPA801B030F-AMP | Wolfspeed, Inc. |
Description: CMPA801B030F DEVELOPMENT BOARD |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CMPA901A020S-AMP1 | Wolfspeed, Inc. |
Description: 9.0-10.0GHZ, AMP W/ CMPA901A020SSupplied Contents: Board(s) Type: Amplifier Frequency: 9GHz ~ 10GHz For Use With/Related Products: CMPA901A020S Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CMPA901A035F | Wolfspeed, Inc. |
Description: GAN MMIC 35W 28V 9.0-10.0GHZ |
на замовлення 154 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CMPA901A035F-AMP | Wolfspeed, Inc. |
Description: CMPA901A035F DEVELOPMENT BOARD |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CRD-001 | Wolfspeed, Inc. | Description: BOARD EVAL ISOL SIC GATE DRIVER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CRD-03600AD065E-L | Wolfspeed, Inc. |
Description: EVAL BOARD FOR C3M0015065DPackaging: Box Function: Power Factor Correction Type: Power Management Contents: Board(s) Utilized IC / Part: C3M0015065D, C3M0045065L Supplied Contents: Board(s) Primary Attributes: 180VAC ~ 265VAC Input Voltage Embedded: No |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| CRD-060DD17P-2 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR C2M1000170D Packaging: Box Voltage - Output: 12V, 12V Voltage - Input: 300V ~ 1000V Current - Output: 4A, 100mA Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: C2M1000170D Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 2 Isolated Outputs Part Status: Obsolete Power - Output: 60W Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CRD-15DD17P | Wolfspeed, Inc. |
Description: EVAL BOARD FOR C2M1000170JPackaging: Bulk Voltage - Output: 12V Voltage - Input: 300V ~ 1200V Current - Output: 1.3A Frequency - Switching: 100kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: C2M1000170J Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Isolated Output Power - Output: 15W Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CRD200DA12E-XM3 | Wolfspeed, Inc. |
Description: CAB400M12XM3 SIC MODULE DEV KITPackaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: CRD200DA12E Supplied Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CRD250DA12E-XM3 | Wolfspeed, Inc. |
Description: EVAL BRD CAB425M12XM3 CGD12HBXMPPackaging: Bulk Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CAB425M12XM3, CGD12HBXMP Supplied Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CRD25DA12N-FMC | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CCB021M12FM3TPackaging: Box Function: Motor Controller/Driver Voltage - Input: 1kV Type: Power Management Contents: Board(s) Utilized IC / Part: CCB021M12FM3T Primary Attributes: Three-Phase Inverter Embedded: No Region Utilized: International Remote Capability: No Power - Output Continuous: 25000 W |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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CRD300DA12E-XM3 | Wolfspeed, Inc. |
Description: EVAL BRD CAB450M12XM3 CGD12HBXMPContents: Board(s) Supplied Contents: Board(s) Utilized IC / Part: CAB450M12XM3, CGD12HBXMP Type: Power Management Function: Gate Driver Packaging: Box |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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CRD600DA12E-XM3 | Wolfspeed, Inc. |
Description: EVAL BRD CAB450M12XM3 CGD12HBXMPPackaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CAB450M12XM3, CGD12HBXMP Supplied Contents: Board(s) Embedded: No |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CSD01060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 4A TO220-2Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 80pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 |
на замовлення 8416 шт: термін постачання 21-31 дні (днів) |
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CSD01060E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 4A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSD01060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 4A TO252-2Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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CSD01060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 4A TO252-2Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 11296 шт: термін постачання 21-31 дні (днів) |
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| CSD02060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 3.5A TO220-2 Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 3.5A Capacitance @ Vr, F: 120pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD02060G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 3.5A TO263-2 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 3.5A Capacitance @ Vr, F: 120pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD04060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 7A TO220-2 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 7A Capacitance @ Vr, F: 220pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD06060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 10A TO220-2 Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 340pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD06060G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 10A TO263-2 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 340pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD10060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 16.5A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 0V, 1MHz Current - Average Rectified (Io): 16.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD10060G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 16.5A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 0V, 1MHz Current - Average Rectified (Io): 16.5A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD20030D | Wolfspeed, Inc. |
Description: DIODE ARR SCHOT 300V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CSD20060D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 600V 16.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16.5A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CVFD20065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 57A TO220-2 Current - Reverse Leakage @ Vr: 80 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 57A Capacitance @ Vr, F: 1100pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E3D08065G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 22A TO263-2Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 369pF @ 0V, 1MHz Current - Average Rectified (Io): 22A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 51 µA @ 650 V |
на замовлення 489 шт: термін постачання 21-31 дні (днів) |
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E3D20065D | Wolfspeed, Inc. |
Description: DIODE ARRAY SIC 650V 28A TO247-3Current - Average Rectified (Io) (per Diode): 28A Diode Configuration: 1 Pair Common Anode Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io): 56A Capacitance @ Vr, F: 459pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 352 шт: термін постачання 21-31 дні (днів) |
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E3D30065D | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 42A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 42A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Current - Reverse Leakage @ Vr: 95 µA @ 650 V |
на замовлення 429 шт: термін постачання 21-31 дні (днів) |
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E3M0016120K | Wolfspeed, Inc. |
Description: SIC, MOSFET, 16M, 1200V, TO-247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 125A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V Power Dissipation (Max): 483W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 22.08mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 1076 шт: термін постачання 21-31 дні (днів) |
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E3M0021120J2-TR | Wolfspeed, Inc. |
Description: 21m, 1200V SiC FET, TO-263-7 XLPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 17.1mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E3M0021120J2-TR | Wolfspeed, Inc. |
Description: 21m, 1200V SiC FET, TO-263-7 XLPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 17.1mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 331 шт: термін постачання 21-31 дні (днів) |
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E3M0021120K | Wolfspeed, Inc. |
Description: SIC, MOSFET, 21M, 1200V, TO-247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.1mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 481 шт: термін постачання 21-31 дні (днів) |
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E3M0032120J2-TR | Wolfspeed, Inc. |
Description: 32m, 1200V SiC FET, TO-263-7 XLPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 10.7mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E3M0032120J2-TR | Wolfspeed, Inc. |
Description: 32m, 1200V SiC FET, TO-263-7 XLPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 10.7mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 729 шт: термін постачання 21-31 дні (днів) |
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E3M0040120J2-TR | Wolfspeed, Inc. |
Description: 40m, 1200V SiC FET, TO-263-7 XLPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 8.77mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E3M0040120J2-TR | Wolfspeed, Inc. |
Description: 40m, 1200V SiC FET, TO-263-7 XLPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 8.77mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 736 шт: термін постачання 21-31 дні (днів) |
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E3M0045065K | Wolfspeed, Inc. |
Description: SIC, MOSFET, 45M, 650V, TO-247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 809 шт: термін постачання 21-31 дні (днів) |
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| CMPA2060035F1 |
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Виробник: Wolfspeed, Inc.
Description: 35W, GAN MMIC POWER AMPLIFIER, 2
Packaging: Tray
Package / Case: 440219
Mounting Type: Chassis Mount
Frequency: 2GHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 27.5dB
Test Frequency: 6GHz
Supplier Device Package: 440219
Description: 35W, GAN MMIC POWER AMPLIFIER, 2
Packaging: Tray
Package / Case: 440219
Mounting Type: Chassis Mount
Frequency: 2GHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 27.5dB
Test Frequency: 6GHz
Supplier Device Package: 440219
товару немає в наявності
В кошику
од. на суму грн.
| CMPA2060035F1-AMP |
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Виробник: Wolfspeed, Inc.
Description: AMPLIFIER, 2.0-6.0GHZ, CMPA20600
Packaging: Bulk
For Use With/Related Products: CMPA2060035F1
Frequency: 2GHz ~ 6GHz
Type: MOSFET
Supplied Contents: Board(s)
Description: AMPLIFIER, 2.0-6.0GHZ, CMPA20600
Packaging: Bulk
For Use With/Related Products: CMPA2060035F1
Frequency: 2GHz ~ 6GHz
Type: MOSFET
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| CMPA2560025F-TB |
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Виробник: Wolfspeed, Inc.
Description: BOARD DEMO AMP CKT CMPA2560025F
Description: BOARD DEMO AMP CKT CMPA2560025F
товару немає в наявності
В кошику
од. на суму грн.
| CMPA2735030S-AMP1 |
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Виробник: Wolfspeed, Inc.
Description: 2.7-3.5GHZ, AMP W/ CMPA2735030S
Packaging: Bulk
For Use With/Related Products: CMPA2735030S
Frequency: 2.7GHz ~ 3.5GHz
Type: Amplifier
Supplied Contents: Board(s)
Description: 2.7-3.5GHZ, AMP W/ CMPA2735030S
Packaging: Bulk
For Use With/Related Products: CMPA2735030S
Frequency: 2.7GHz ~ 3.5GHz
Type: Amplifier
Supplied Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 60783.26 грн |
| CMPA2935150S-AMP1 |
Виробник: Wolfspeed, Inc.
Description: 2.9-3.5GHZ, AMP W/ CMPA2935150S
Part Status: Active
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 2.9GHz ~ 3.5GHz
For Use With/Related Products: CMPA2935150S
Packaging: Bulk
Description: 2.9-3.5GHZ, AMP W/ CMPA2935150S
Part Status: Active
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 2.9GHz ~ 3.5GHz
For Use With/Related Products: CMPA2935150S
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 100235.78 грн |
| CMPA3135060S-AMP1 |
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Виробник: Wolfspeed, Inc.
Description: 3.1-3.5GHZ, AMP W/ CMPA3135060S
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 3.1GHz ~ 3.5GHz
For Use With/Related Products: CMPA3135060S
Packaging: Bulk
Description: 3.1-3.5GHZ, AMP W/ CMPA3135060S
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 3.1GHz ~ 3.5GHz
For Use With/Related Products: CMPA3135060S
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 69177.13 грн |
| CMPA5259050F-AMP |
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Виробник: Wolfspeed, Inc.
Description: AMPLIFIER, 5.2-5.9GHZ, GAN MMIC
Part Status: Active
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 5.2GHz ~ 5.9GHz
For Use With/Related Products: CMPA5259050F
Packaging: Bulk
Description: AMPLIFIER, 5.2-5.9GHZ, GAN MMIC
Part Status: Active
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 5.2GHz ~ 5.9GHz
For Use With/Related Products: CMPA5259050F
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 96285.36 грн |
| CMPA5259050S |
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Виробник: Wolfspeed, Inc.
Description: IC AMP RADAR 5GHZ-5.9GHZ 32QFN
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Test Frequency: 5.9GHz
Gain: 23.6dB
Voltage - Supply: 28V
RF Type: Radar
Frequency: 5GHz ~ 5.9GHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC AMP RADAR 5GHZ-5.9GHZ 32QFN
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Test Frequency: 5.9GHz
Gain: 23.6dB
Voltage - Supply: 28V
RF Type: Radar
Frequency: 5GHz ~ 5.9GHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 43465.80 грн |
| CMPA5259050S-AMP1 |
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Виробник: Wolfspeed, Inc.
Description: CMPA5259050S DEV BOARD
Part Status: Active
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 5GHz ~ 5.9GHz
For Use With/Related Products: CMPA5259050S
Packaging: Bulk
Description: CMPA5259050S DEV BOARD
Part Status: Active
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 5GHz ~ 5.9GHz
For Use With/Related Products: CMPA5259050S
Packaging: Bulk
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 82524.71 грн |
| CMPA5259080S |
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Виробник: Wolfspeed, Inc.
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 70729.08 грн |
| 10+ | 64586.31 грн |
| CMPA5259080S |
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Виробник: Wolfspeed, Inc.
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| CMPA5259080S-AMP1 |
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Виробник: Wolfspeed, Inc.
Description: 5.2-5.9GHZ, AMP W/ CMPA5259080S
Packaging: Bulk
For Use With/Related Products: CMPA5259080S
Frequency: 5GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
Description: 5.2-5.9GHZ, AMP W/ CMPA5259080S
Packaging: Bulk
For Use With/Related Products: CMPA5259080S
Frequency: 5GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 98426.74 грн |
| CMPA5585025D |
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Виробник: Wolfspeed, Inc.
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
товару немає в наявності
В кошику
од. на суму грн.
| CMPA5585025F |
Виробник: Wolfspeed, Inc.
Description: IC AMP GPS 5.5GHZ-8.5GHZ 440208
Supplier Device Package: 440208
Test Frequency: 8.4GHz
Gain: 22dB
RF Type: General Purpose
Frequency: 5.5GHz ~ 8.5GHz
Mounting Type: Flange Mount
Package / Case: 440208
Packaging: Tray
Description: IC AMP GPS 5.5GHZ-8.5GHZ 440208
Supplier Device Package: 440208
Test Frequency: 8.4GHz
Gain: 22dB
RF Type: General Purpose
Frequency: 5.5GHz ~ 8.5GHz
Mounting Type: Flange Mount
Package / Case: 440208
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| CMPA5585025F-AMP |
Виробник: Wolfspeed, Inc.
Description: AMPLIFIER, 5.5-8.5GHZ, CMPA55850
Packaging: Box
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Board(s)
Description: AMPLIFIER, 5.5-8.5GHZ, CMPA55850
Packaging: Box
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| CMPA5585025F-TB |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CMPA5585025F
Packaging: Bulk
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
Description: EVAL BOARD FOR CMPA5585025F
Packaging: Bulk
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
товару немає в наявності
В кошику
од. на суму грн.
| CMPA5585030D |
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Виробник: Wolfspeed, Inc.
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
товару немає в наявності
В кошику
од. на суму грн.
| CMPA5585030F-TB |
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Виробник: Wolfspeed, Inc.
Description: TEST BOARD
Packaging: Bulk
For Use With/Related Products: CMPA5585030
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
Description: TEST BOARD
Packaging: Bulk
For Use With/Related Products: CMPA5585030
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
товару немає в наявності
В кошику
од. на суму грн.
| CMPA601C025F-AMP |
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Виробник: Wolfspeed, Inc.
Description: AMPLIFIER, 6.0-12.0GHZ, CMPA601C
Packaging: Box
For Use With/Related Products: CMPA601C025F
Frequency: 6GHz ~ 12GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
Description: AMPLIFIER, 6.0-12.0GHZ, CMPA601C
Packaging: Box
For Use With/Related Products: CMPA601C025F
Frequency: 6GHz ~ 12GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| CMPA801B025F-AMP |
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Виробник: Wolfspeed, Inc.
Description: CMPA801B025F DEV BOARD WITH HEMT
Description: CMPA801B025F DEV BOARD WITH HEMT
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 61684.64 грн |
| CMPA801B030F-AMP |
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Виробник: Wolfspeed, Inc.
Description: CMPA801B030F DEVELOPMENT BOARD
Description: CMPA801B030F DEVELOPMENT BOARD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 84753.88 грн |
| CMPA901A020S-AMP1 |
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Виробник: Wolfspeed, Inc.
Description: 9.0-10.0GHZ, AMP W/ CMPA901A020S
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 9GHz ~ 10GHz
For Use With/Related Products: CMPA901A020S
Packaging: Bulk
Description: 9.0-10.0GHZ, AMP W/ CMPA901A020S
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 9GHz ~ 10GHz
For Use With/Related Products: CMPA901A020S
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 68534.40 грн |
| CMPA901A035F |
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Виробник: Wolfspeed, Inc.
Description: GAN MMIC 35W 28V 9.0-10.0GHZ
Description: GAN MMIC 35W 28V 9.0-10.0GHZ
на замовлення 154 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| CMPA901A035F-AMP |
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Виробник: Wolfspeed, Inc.
Description: CMPA901A035F DEVELOPMENT BOARD
Description: CMPA901A035F DEVELOPMENT BOARD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 114021.51 грн |
| CRD-001 |
Виробник: Wolfspeed, Inc.
Description: BOARD EVAL ISOL SIC GATE DRIVER
Description: BOARD EVAL ISOL SIC GATE DRIVER
товару немає в наявності
В кошику
од. на суму грн.
| CRD-03600AD065E-L |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR C3M0015065D
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: C3M0015065D, C3M0045065L
Supplied Contents: Board(s)
Primary Attributes: 180VAC ~ 265VAC Input Voltage
Embedded: No
Description: EVAL BOARD FOR C3M0015065D
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: C3M0015065D, C3M0045065L
Supplied Contents: Board(s)
Primary Attributes: 180VAC ~ 265VAC Input Voltage
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 80682.74 грн |
| CRD-060DD17P-2 |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR C2M1000170D
Packaging: Box
Voltage - Output: 12V, 12V
Voltage - Input: 300V ~ 1000V
Current - Output: 4A, 100mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170D
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 2 Isolated Outputs
Part Status: Obsolete
Power - Output: 60W
Contents: Board(s)
Description: EVAL BOARD FOR C2M1000170D
Packaging: Box
Voltage - Output: 12V, 12V
Voltage - Input: 300V ~ 1000V
Current - Output: 4A, 100mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170D
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 2 Isolated Outputs
Part Status: Obsolete
Power - Output: 60W
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| CRD-15DD17P |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR C2M1000170J
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 300V ~ 1200V
Current - Output: 1.3A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170J
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Power - Output: 15W
Contents: Board(s)
Description: EVAL BOARD FOR C2M1000170J
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 300V ~ 1200V
Current - Output: 1.3A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170J
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Power - Output: 15W
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| CRD200DA12E-XM3 |
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Виробник: Wolfspeed, Inc.
Description: CAB400M12XM3 SIC MODULE DEV KIT
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: CRD200DA12E
Supplied Contents: Board(s)
Description: CAB400M12XM3 SIC MODULE DEV KIT
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: CRD200DA12E
Supplied Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 648912.35 грн |
| CRD250DA12E-XM3 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BRD CAB425M12XM3 CGD12HBXMP
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB425M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Description: EVAL BRD CAB425M12XM3 CGD12HBXMP
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB425M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 624445.54 грн |
| CRD25DA12N-FMC |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CCB021M12FM3T
Packaging: Box
Function: Motor Controller/Driver
Voltage - Input: 1kV
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3T
Primary Attributes: Three-Phase Inverter
Embedded: No
Region Utilized: International
Remote Capability: No
Power - Output Continuous: 25000 W
Description: EVAL BOARD FOR CCB021M12FM3T
Packaging: Box
Function: Motor Controller/Driver
Voltage - Input: 1kV
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3T
Primary Attributes: Three-Phase Inverter
Embedded: No
Region Utilized: International
Remote Capability: No
Power - Output Continuous: 25000 W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 333759.26 грн |
| CRD300DA12E-XM3 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Type: Power Management
Function: Gate Driver
Packaging: Box
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Type: Power Management
Function: Gate Driver
Packaging: Box
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 703355.32 грн |
| CRD600DA12E-XM3 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Embedded: No
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1903923.46 грн |
| CSD01060A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Description: DIODE SIL CARB 600V 4A TO220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
на замовлення 8416 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.71 грн |
| 50+ | 93.43 грн |
| 100+ | 76.87 грн |
| 500+ | 61.04 грн |
| 1000+ | 51.79 грн |
| 2000+ | 49.20 грн |
| 5000+ | 46.58 грн |
| CSD01060E |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| CSD01060E-TR |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 45.86 грн |
| 5000+ | 41.53 грн |
| CSD01060E-TR |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 11296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 159.90 грн |
| 10+ | 98.57 грн |
| 100+ | 66.86 грн |
| 500+ | 49.98 грн |
| 1000+ | 45.88 грн |
| CSD02060A |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO220-2
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARB 600V 3.5A TO220-2
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
товару немає в наявності
В кошику
од. на суму грн.
| CSD02060G |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO263-2
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE SIL CARB 600V 3.5A TO263-2
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| CSD04060A |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 7A TO220-2
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 7A
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 600V 7A TO220-2
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 7A
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| CSD06060A |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO220-2
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Description: DIODE SIL CARB 600V 10A TO220-2
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
товару немає в наявності
В кошику
од. на суму грн.
| CSD06060G |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO263-2
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE SIL CARB 600V 10A TO263-2
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| CSD10060A |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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| CSD10060G |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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| CSD20030D |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SCHOT 300V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Description: DIODE ARR SCHOT 300V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
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| CSD20060D |
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Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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| CVFD20065A |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 57A TO220-2
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 57A
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 57A TO220-2
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 57A
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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| E3D08065G |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 321.36 грн |
| 10+ | 277.61 грн |
| 100+ | 227.44 грн |
| E3D20065D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 650V 28A TO247-3
Current - Average Rectified (Io) (per Diode): 28A
Diode Configuration: 1 Pair Common Anode
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 56A
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY SIC 650V 28A TO247-3
Current - Average Rectified (Io) (per Diode): 28A
Diode Configuration: 1 Pair Common Anode
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 56A
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 352 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 736.79 грн |
| 30+ | 547.82 грн |
| E3D30065D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 429 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 910.79 грн |
| 30+ | 528.95 грн |
| 120+ | 452.63 грн |
| E3M0016120K |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 1076 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3701.96 грн |
| 30+ | 2443.82 грн |
| E3M0021120J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
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| E3M0021120J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 331 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2674.38 грн |
| 10+ | 1910.13 грн |
| 100+ | 1890.95 грн |
| E3M0021120K |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1916.43 грн |
| 30+ | 1190.60 грн |
| 120+ | 1076.46 грн |
| E3M0032120J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
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| E3M0032120J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 729 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2240.14 грн |
| 10+ | 1584.90 грн |
| 100+ | 1367.19 грн |
| E3M0040120J2-TR |
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Виробник: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| E3M0040120J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1678.93 грн |
| 10+ | 1165.31 грн |
| 100+ | 941.38 грн |
| E3M0045065K |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
на замовлення 809 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1519.03 грн |
| 30+ | 920.61 грн |
| 120+ | 830.25 грн |































