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E3M0060065D E3M0060065D Wolfspeed, Inc. Wolfspeed_E3M0060065D_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
на замовлення 343 шт:
термін постачання 21-31 дні (днів)
1+1157.69 грн
30+692.04 грн
120+605.73 грн
В кошику  од. на суму  грн.
E3M0060065K E3M0060065K Wolfspeed, Inc. wolfspeed_E3M0060065K_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+1157.69 грн
30+692.04 грн
120+605.73 грн
В кошику  од. на суму  грн.
E3M0075120D E3M0075120D Wolfspeed, Inc. E3M0075120D.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
1+1544.11 грн
10+1309.48 грн
100+1132.55 грн
500+963.20 грн
В кошику  од. на суму  грн.
E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
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E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
1+1298.78 грн
10+889.59 грн
100+686.10 грн
В кошику  од. на суму  грн.
E3M0075120K E3M0075120K Wolfspeed, Inc. Wolfspeed_E3M0075120K_data_sheet.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
1+1591.93 грн
30+968.49 грн
В кошику  од. на суму  грн.
E3M0120090J E3M0120090J Wolfspeed, Inc. Wolfspeed_E3M0120090J_data_sheet.pdf Description: 900V 120M AUTOMOTIVE SIC MOSFET
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
на замовлення 512 шт:
термін постачання 21-31 дні (днів)
1+717.97 грн
50+579.83 грн
В кошику  од. на суму  грн.
E3M0160120D E3M0160120D Wolfspeed, Inc. Wolfspeed_E3M0160120D_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): -8V, +19V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tray
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E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
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E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 773 шт:
термін постачання 21-31 дні (днів)
1+731.30 грн
10+484.87 грн
100+360.82 грн
В кошику  од. на суму  грн.
E3M0160120K Wolfspeed, Inc. Description: SIC, MOSFET, 16M, 1200V, TO-247-
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-4L
Power Dissipation (Max): 115W
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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E3M0900170D E3M0900170D Wolfspeed, Inc. Wolfspeed_E3M0900170D_data_sheet.pdf Description: SIC, MOSFET, 900M, 1700V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 321 шт:
термін постачання 21-31 дні (днів)
1+438.94 грн
30+239.95 грн
120+199.85 грн
В кошику  од. на суму  грн.
E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Cut Tape (CT)
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
2+174.79 грн
10+139.64 грн
100+111.19 грн
500+88.29 грн
1000+74.91 грн
Мінімальне замовлення: 2
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E4D10120A E4D10120A Wolfspeed, Inc. Wolfspeed_E4D10120A_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 33A TO220-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 33A
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
1+987.61 грн
50+582.98 грн
100+570.99 грн
В кошику  од. на суму  грн.
E4D20120A E4D20120A Wolfspeed, Inc. Wolfspeed_E4D20120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 54.5A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 54.5A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Grade: Automotive
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
1+1519.82 грн
50+1152.24 грн
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E4D20120D E4D20120D Wolfspeed, Inc. Wolfspeed_E4D20120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
1+1907.02 грн
30+1184.79 грн
120+1071.54 грн
В кошику  од. на суму  грн.
E4D20120G E4D20120G Wolfspeed, Inc. Wolfspeed_E4D20120G_data_sheet.pdf Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2237 шт:
термін постачання 21-31 дні (днів)
1+1711.85 грн
50+1000.26 грн
100+938.09 грн
500+877.24 грн
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E4M0013120K E4M0013120K Wolfspeed, Inc. Wolfspeed_E4M0013120K_data_sheet.pdf Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+6422.58 грн
30+5523.14 грн
В кошику  од. на суму  грн.
E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
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E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+2905.60 грн
10+2280.88 грн
100+2054.44 грн
В кошику  од. на суму  грн.
E4M0025075J2-TR E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+750.88 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
E4M0025075J2-TR E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 913 шт:
термін постачання 21-31 дні (днів)
1+1332.48 грн
10+918.20 грн
100+885.04 грн
В кошику  од. на суму  грн.
E4M0025075K1 E4M0025075K1 Wolfspeed, Inc. Wolfspeed_E4M0025075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
1+1332.48 грн
30+805.43 грн
120+723.07 грн
В кошику  од. на суму  грн.
E4M0045075J2-TR E4M0045075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0045075J2_data_sheet.pdf Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
1+942.15 грн
10+634.47 грн
100+530.63 грн
В кошику  од. на суму  грн.
E4M0045075J2-TR E4M0045075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0045075J2_data_sheet.pdf Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
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E4M0045075K1 E4M0045075K1 Wolfspeed, Inc. Wolfspeed_E4M0045075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
1+942.15 грн
30+549.96 грн
120+471.65 грн
В кошику  од. на суму  грн.
E4M0060075J2-TR E4M0060075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0060075J2_data_sheet.pdf Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
товару немає в наявності
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E4M0060075J2-TR E4M0060075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0060075J2_data_sheet.pdf Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
1+746.19 грн
10+497.48 грн
100+419.18 грн
В кошику  од. на суму  грн.
E4M0060075K1 E4M0060075K1 Wolfspeed, Inc. Wolfspeed_E4M0060075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 126W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
Qualification: AEC-Q101
на замовлення 402 шт:
термін постачання 21-31 дні (днів)
1+746.19 грн
30+429.07 грн
120+365.65 грн
В кошику  од. на суму  грн.
E6D10065A E6D10065A Wolfspeed, Inc. Wolfspeed_E6D10065A_data_sheet.pdf Description: SIC, SCHOTTKY DIODE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
1+317.44 грн
10+200.02 грн
50+155.55 грн
100+132.66 грн
250+131.68 грн
В кошику  од. на суму  грн.
E6D10065G E6D10065G Wolfspeed, Inc. 215575 Description: WOLFSPEED SIC, SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 32A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+380.15 грн
10+239.19 грн
50+185.62 грн
100+158.17 грн
250+140.90 грн
500+130.28 грн
1000+122.24 грн
В кошику  од. на суму  грн.
E6D20065A E6D20065A Wolfspeed, Inc. Wolfspeed_E6D20065A_data_sheet.pdf Description: DIODE SIC 650V TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
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E6D20065D E6D20065D Wolfspeed, Inc. 215559 Description: DIODE SIC 650V 34A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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E6D20065G E6D20065G Wolfspeed, Inc. 215585 Description: DIODE SIC 650V 68A TO263
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
товару немає в наявності
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E6D20065H E6D20065H Wolfspeed, Inc. Wolfspeed_E6D20065H_data_sheet.pdf Description: DIODE SIC 650V TO247
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Bulk
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 59A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
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E6D30065D E6D30065D Wolfspeed, Inc. 215564 Description: DIODE SIC 650V 50A TO247
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+854.36 грн
10+564.58 грн
30+485.53 грн
120+387.41 грн
270+373.64 грн
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E6D40065H E6D40065H Wolfspeed, Inc. Wolfspeed_E6D40065H_data_sheet.pdf Description: DIODE SIL CARB 650V 109A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2460pF @ 0V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Qualification: AEC-Q101
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+1193.75 грн
30+709.12 грн
120+612.72 грн
В кошику  од. на суму  грн.
EAB450M12XM3 EAB450M12XM3 Wolfspeed, Inc. Wolfspeed_EAB450M12XM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+74296.22 грн
В кошику  од. на суму  грн.
FXA/WS1A2639V1-05 Wolfspeed, Inc. Description: 38.5 DBM AVG, 48V, 2.495-2.690 G
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
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FXL/WS1A2639V1-06 Wolfspeed, Inc. Description: INTEGRATED DRIVER+FINAL STAGE 2.
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
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GTRA214602FC-V1-R0 Wolfspeed, Inc. GTRA214602FC-V1.pdf Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
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GTRA214602FC-V1-R2 Wolfspeed, Inc. GTRA214602FC-V1.pdf Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
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GTRA262802FC-V2-R0 GTRA262802FC-V2-R0 Wolfspeed, Inc. GTRA262802FC_V2.pdf Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRA262802FC-V2-R2 GTRA262802FC-V2-R2 Wolfspeed, Inc. GTRA262802FC_V2.pdf Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRA384802FC-V1-R0 GTRA384802FC-V1-R0 Wolfspeed, Inc. GTRA384802FC-V1.pdf Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Tape & Reel (TR)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
50+17263.36 грн
Мінімальне замовлення: 50
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GTRA384802FC-V1-R0 GTRA384802FC-V1-R0 Wolfspeed, Inc. GTRA384802FC-V1.pdf Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Cut Tape (CT)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+18431.40 грн
10+16998.95 грн
25+16623.98 грн
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GTRB097152FC-V1-R0 Wolfspeed, Inc. Description: 900W,48V,758-960MHZ,GANHEMT(50PC
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRB097152FC-V1-R2 Wolfspeed, Inc. Description: 900W,48V,758-960MHZ,GANHEMT(250P
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRB206002FC/1-V1-R0 Wolfspeed, Inc. Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
товару немає в наявності
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GTRB206002FC/1-V1-R2 Wolfspeed, Inc. Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
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GTRB246608FC-V1-R0 Wolfspeed, Inc. Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
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GTRB246608FC-V1-R2 Wolfspeed, Inc. Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
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GTVA107001FC-V1-R0 GTVA107001FC-V1-R0 Wolfspeed, Inc. Wolfspeed_GTVA107001EFC-V1.pdf Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Cut Tape (CT)
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GTVA107001FC-V1-R0 GTVA107001FC-V1-R0 Wolfspeed, Inc. Wolfspeed_GTVA107001EFC-V1.pdf Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Tape & Reel (TR)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
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GTVA261701FA-V1-R0 Wolfspeed, Inc. GTVA261701FA_V1_05.pdf Description: GAN SIC
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HAS175M12BM3 HAS175M12BM3 Wolfspeed, Inc. Wolfspeed_HAS175M12BM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 175A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 175A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+43535.42 грн
В кошику  од. на суму  грн.
HAS350M12BM3 HAS350M12BM3 Wolfspeed, Inc. Wolfspeed_HAS350M12BM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 350A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 350A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+73062.50 грн
В кошику  од. на суму  грн.
HAS530M12BM3 HAS530M12BM3 Wolfspeed, Inc. Wolfspeed_HAS530M12BM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 530A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+82549.01 грн
В кошику  од. на суму  грн.
KIT8020-CRD-5FF0917P-2 KIT8020-CRD-5FF0917P-2 Wolfspeed, Inc. KIT8020_CRD_5FF0917P_2_Application_Note.pdf Description: EVAL BOARD FOR CREES SIC MOSFET
Supplied Contents: Board(s)
Utilized IC / Part: C3M0075120K
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
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E3M0060065D Wolfspeed_E3M0060065D_data_sheet.pdf
E3M0060065D
Виробник: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
на замовлення 343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1157.69 грн
30+692.04 грн
120+605.73 грн
В кошику  од. на суму  грн.
E3M0060065K wolfspeed_E3M0060065K_data_sheet.pdf
E3M0060065K
Виробник: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1157.69 грн
30+692.04 грн
120+605.73 грн
В кошику  од. на суму  грн.
E3M0075120D E3M0075120D.pdf
E3M0075120D
Виробник: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1544.11 грн
10+1309.48 грн
100+1132.55 грн
500+963.20 грн
В кошику  од. на суму  грн.
E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
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E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1298.78 грн
10+889.59 грн
100+686.10 грн
В кошику  од. на суму  грн.
E3M0075120K Wolfspeed_E3M0075120K_data_sheet.pdf
E3M0075120K
Виробник: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1591.93 грн
30+968.49 грн
В кошику  од. на суму  грн.
E3M0120090J Wolfspeed_E3M0120090J_data_sheet.pdf
E3M0120090J
Виробник: Wolfspeed, Inc.
Description: 900V 120M AUTOMOTIVE SIC MOSFET
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
на замовлення 512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+717.97 грн
50+579.83 грн
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E3M0160120D Wolfspeed_E3M0160120D_data_sheet.pdf
E3M0160120D
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): -8V, +19V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tray
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E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Виробник: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
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E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Виробник: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 773 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+731.30 грн
10+484.87 грн
100+360.82 грн
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E3M0160120K
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-4L
Power Dissipation (Max): 115W
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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E3M0900170D Wolfspeed_E3M0900170D_data_sheet.pdf
E3M0900170D
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 900M, 1700V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 321 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+438.94 грн
30+239.95 грн
120+199.85 грн
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Cut Tape (CT)
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.79 грн
10+139.64 грн
100+111.19 грн
500+88.29 грн
1000+74.91 грн
Мінімальне замовлення: 2
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E4D10120A Wolfspeed_E4D10120A_data_sheet.pdf
E4D10120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 33A TO220-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 33A
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+987.61 грн
50+582.98 грн
100+570.99 грн
В кошику  од. на суму  грн.
E4D20120A Wolfspeed_E4D20120A_data_sheet.pdf
E4D20120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 54.5A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Grade: Automotive
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1519.82 грн
50+1152.24 грн
В кошику  од. на суму  грн.
E4D20120D Wolfspeed_E4D20120D_data_sheet.pdf
E4D20120D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1907.02 грн
30+1184.79 грн
120+1071.54 грн
В кошику  од. на суму  грн.
E4D20120G Wolfspeed_E4D20120G_data_sheet.pdf
E4D20120G
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2237 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1711.85 грн
50+1000.26 грн
100+938.09 грн
500+877.24 грн
В кошику  од. на суму  грн.
E4M0013120K Wolfspeed_E4M0013120K_data_sheet.pdf
E4M0013120K
Виробник: Wolfspeed, Inc.
Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6422.58 грн
30+5523.14 грн
В кошику  од. на суму  грн.
E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
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E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2905.60 грн
10+2280.88 грн
100+2054.44 грн
В кошику  од. на суму  грн.
E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
E4M0025075J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+750.88 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
E4M0025075J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 913 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1332.48 грн
10+918.20 грн
100+885.04 грн
В кошику  од. на суму  грн.
E4M0025075K1 Wolfspeed_E4M0025075K1_data_sheet.pdf
E4M0025075K1
Виробник: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1332.48 грн
30+805.43 грн
120+723.07 грн
В кошику  од. на суму  грн.
E4M0045075J2-TR Wolfspeed_E4M0045075J2_data_sheet.pdf
E4M0045075J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+942.15 грн
10+634.47 грн
100+530.63 грн
В кошику  од. на суму  грн.
E4M0045075J2-TR Wolfspeed_E4M0045075J2_data_sheet.pdf
E4M0045075J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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E4M0045075K1 Wolfspeed_E4M0045075K1_data_sheet.pdf
E4M0045075K1
Виробник: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+942.15 грн
30+549.96 грн
120+471.65 грн
В кошику  од. на суму  грн.
E4M0060075J2-TR Wolfspeed_E4M0060075J2_data_sheet.pdf
E4M0060075J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
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E4M0060075J2-TR Wolfspeed_E4M0060075J2_data_sheet.pdf
E4M0060075J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+746.19 грн
10+497.48 грн
100+419.18 грн
В кошику  од. на суму  грн.
E4M0060075K1 Wolfspeed_E4M0060075K1_data_sheet.pdf
E4M0060075K1
Виробник: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 126W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
Qualification: AEC-Q101
на замовлення 402 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+746.19 грн
30+429.07 грн
120+365.65 грн
В кошику  од. на суму  грн.
E6D10065A Wolfspeed_E6D10065A_data_sheet.pdf
E6D10065A
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+317.44 грн
10+200.02 грн
50+155.55 грн
100+132.66 грн
250+131.68 грн
В кошику  од. на суму  грн.
E6D10065G 215575
E6D10065G
Виробник: Wolfspeed, Inc.
Description: WOLFSPEED SIC, SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 32A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+380.15 грн
10+239.19 грн
50+185.62 грн
100+158.17 грн
250+140.90 грн
500+130.28 грн
1000+122.24 грн
В кошику  од. на суму  грн.
E6D20065A Wolfspeed_E6D20065A_data_sheet.pdf
E6D20065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
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E6D20065D 215559
E6D20065D
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 34A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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E6D20065G 215585
E6D20065G
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 68A TO263
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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E6D20065H Wolfspeed_E6D20065H_data_sheet.pdf
E6D20065H
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V TO247
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Bulk
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 59A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
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E6D30065D 215564
E6D30065D
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 50A TO247
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+854.36 грн
10+564.58 грн
30+485.53 грн
120+387.41 грн
270+373.64 грн
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E6D40065H Wolfspeed_E6D40065H_data_sheet.pdf
E6D40065H
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 109A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2460pF @ 0V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Qualification: AEC-Q101
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1193.75 грн
30+709.12 грн
120+612.72 грн
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EAB450M12XM3 Wolfspeed_EAB450M12XM3_data_sheet.pdf
EAB450M12XM3
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+74296.22 грн
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FXA/WS1A2639V1-05
Виробник: Wolfspeed, Inc.
Description: 38.5 DBM AVG, 48V, 2.495-2.690 G
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
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FXL/WS1A2639V1-06
Виробник: Wolfspeed, Inc.
Description: INTEGRATED DRIVER+FINAL STAGE 2.
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
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GTRA214602FC-V1-R0 GTRA214602FC-V1.pdf
Виробник: Wolfspeed, Inc.
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
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GTRA214602FC-V1-R2 GTRA214602FC-V1.pdf
Виробник: Wolfspeed, Inc.
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
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GTRA262802FC-V2-R0 GTRA262802FC_V2.pdf
GTRA262802FC-V2-R0
Виробник: Wolfspeed, Inc.
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRA262802FC-V2-R2 GTRA262802FC_V2.pdf
GTRA262802FC-V2-R2
Виробник: Wolfspeed, Inc.
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRA384802FC-V1-R0 GTRA384802FC-V1.pdf
GTRA384802FC-V1-R0
Виробник: Wolfspeed, Inc.
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Tape & Reel (TR)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+17263.36 грн
Мінімальне замовлення: 50
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GTRA384802FC-V1-R0 GTRA384802FC-V1.pdf
GTRA384802FC-V1-R0
Виробник: Wolfspeed, Inc.
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Cut Tape (CT)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18431.40 грн
10+16998.95 грн
25+16623.98 грн
В кошику  од. на суму  грн.
GTRB097152FC-V1-R0
Виробник: Wolfspeed, Inc.
Description: 900W,48V,758-960MHZ,GANHEMT(50PC
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRB097152FC-V1-R2
Виробник: Wolfspeed, Inc.
Description: 900W,48V,758-960MHZ,GANHEMT(250P
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
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GTRB206002FC/1-V1-R0
Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
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GTRB206002FC/1-V1-R2
Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
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GTRB246608FC-V1-R0
Виробник: Wolfspeed, Inc.
Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
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GTRB246608FC-V1-R2
Виробник: Wolfspeed, Inc.
Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
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GTVA107001FC-V1-R0 Wolfspeed_GTVA107001EFC-V1.pdf
GTVA107001FC-V1-R0
Виробник: Wolfspeed, Inc.
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Cut Tape (CT)
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GTVA107001FC-V1-R0 Wolfspeed_GTVA107001EFC-V1.pdf
GTVA107001FC-V1-R0
Виробник: Wolfspeed, Inc.
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Tape & Reel (TR)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
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GTVA261701FA-V1-R0 GTVA261701FA_V1_05.pdf
Виробник: Wolfspeed, Inc.
Description: GAN SIC
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HAS175M12BM3 Wolfspeed_HAS175M12BM3_data_sheet.pdf
HAS175M12BM3
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 175A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 175A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+43535.42 грн
В кошику  од. на суму  грн.
HAS350M12BM3 Wolfspeed_HAS350M12BM3_data_sheet.pdf
HAS350M12BM3
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 350A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 350A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+73062.50 грн
В кошику  од. на суму  грн.
HAS530M12BM3 Wolfspeed_HAS530M12BM3_data_sheet.pdf
HAS530M12BM3
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+82549.01 грн
В кошику  од. на суму  грн.
KIT8020-CRD-5FF0917P-2 KIT8020_CRD_5FF0917P_2_Application_Note.pdf
KIT8020-CRD-5FF0917P-2
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CREES SIC MOSFET
Supplied Contents: Board(s)
Utilized IC / Part: C3M0075120K
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
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