Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (579) > Сторінка 8 з 10
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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E4D02120E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 8A TO252-2Packaging: Tape & Reel (TR) Package / Case: TO-252-2 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 153pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
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E4D02120E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 8A TO252-2Packaging: Cut Tape (CT) Package / Case: TO-252-2 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 153pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 2674 шт: термін постачання 21-31 дні (днів) |
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E4D10120A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 33A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 777pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 386 шт: термін постачання 21-31 дні (днів) |
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E4D20120A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 54.5A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Current - Average Rectified (Io): 54.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
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E4D20120D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 1200V 33A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 712pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Grade: Automotive Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 33A |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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E4D20120G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 56A TO2632Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1474pF @ 0V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 2237 шт: термін постачання 21-31 дні (днів) |
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E4M0013120K | Wolfspeed, Inc. |
Description: 13M, 1200V, SIC FET TO-247, AUTOPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 153A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 23.18mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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| E4M0015075J2-TR | Wolfspeed, Inc. |
Description: MOSFETS 5128 PF 554W 3.8V 180 NCPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 156A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Power Dissipation (Max): 554W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 15.4mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| E4M0015075J2-TR | Wolfspeed, Inc. |
Description: MOSFETS 5128 PF 554W 3.8V 180 NCPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 156A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Power Dissipation (Max): 554W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 15.4mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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| E4M0025075J2-TR | Wolfspeed, Inc. |
Description: MOSFETS 3055 PF 281W 3.8V 114 NCPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 281W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 9.22mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| E4M0025075J2-TR | Wolfspeed, Inc. |
Description: MOSFETS 3055 PF 281W 3.8V 114 NCPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 281W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 9.22mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 391 шт: термін постачання 21-31 дні (днів) |
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E4M0025075K1 | Wolfspeed, Inc. |
Description: MOSFETS AUTOMOTIVE 262W 3.8V NCPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 9.22mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E6D10065A | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODEPackaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 630pF @ 0V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 985 шт: термін постачання 21-31 дні (днів) |
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E6D10065G | Wolfspeed, Inc. |
Description: WOLFSPEED SIC, SCHOTTKY DIODEPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 630pF @ 0V, 1MHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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E6D20065A | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO220Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1277pF @ 0V, 1MHz Current - Average Rectified (Io): 68A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E6D20065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 34A TO247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 34A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E6D20065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 68A TO263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1277pF @ 0V, 1MHz Current - Average Rectified (Io): 68A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E6D20065H | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO247Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1277pF @ 0V, 1MHz Current - Average Rectified (Io): 59A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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E6D30065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 50A TO247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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E6D40065H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 109A TO2472Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2460pF @ 0V, 1MHz Current - Average Rectified (Io): 109A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A Current - Reverse Leakage @ Vr: 150 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 320 шт: термін постачання 21-31 дні (днів) |
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EAB450M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 450APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 132mA Part Status: Active |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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| FXA/WS1A2639V1-05 | Wolfspeed, Inc. |
Description: 38.5 DBM AVG, 48V, 2.495-2.690 G Packaging: Bulk For Use With/Related Products: WS1A2639 Frequency: 2.5GHz ~ 2.69GHz Type: Power Amplifier Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FXL/WS1A2639V1-06 | Wolfspeed, Inc. |
Description: INTEGRATED DRIVER+FINAL STAGE 2. Packaging: Bulk For Use With/Related Products: WS1A2639 Frequency: 2.5GHz ~ 2.69GHz Type: Power Amplifier Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GTRA214602FC-V1-R0 | Wolfspeed, Inc. |
Description: 490W, GAN HEMT, 48V, 2110-2200MHPackaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 2.11GHz ~ 2.17GHz Power - Output: 490W Gain: 14.4dB Technology: HEMT Supplier Device Package: H-37248C-4 Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 150 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GTRA214602FC-V1-R2 | Wolfspeed, Inc. |
Description: 490W, GAN HEMT, 48V, 2110-2200MHPackaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 2.11GHz ~ 2.17GHz Power - Output: 490W Gain: 14.4dB Technology: HEMT Supplier Device Package: H-37248C-4 Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 150 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GTRA262802FC-V2-R0 | Wolfspeed, Inc. |
Description: 280W, GAN HEMT, 48V, 2496-2690MHPackaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 2.49GHz ~ 2.69GHz Power - Output: 250W Gain: 14dB Technology: HEMT Supplier Device Package: H-37248C-4 Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 200 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GTRA262802FC-V2-R2 | Wolfspeed, Inc. |
Description: 280W, GAN HEMT, 48V, 2496-2690MHPackaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 2.49GHz ~ 2.69GHz Power - Output: 250W Gain: 14dB Technology: HEMT Supplier Device Package: H-37248C-4 Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 200 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GTRA384802FC-V1-R0 | Wolfspeed, Inc. |
Description: GAN HEMT 48V 480W 3800MHZPackaging: Cut Tape (CT) Frequency: 3.6GHz ~ 3.8GHz Power - Output: 63W Gain: 13.7dB Technology: HEMT Part Status: Active Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 250 mA |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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GTRA384802FC-V1-R0 | Wolfspeed, Inc. |
Description: GAN HEMT 48V 480W 3800MHZPackaging: Tape & Reel (TR) Frequency: 3.6GHz ~ 3.8GHz Power - Output: 63W Gain: 13.7dB Technology: HEMT Part Status: Active Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 250 mA |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| GTRB097152FC-V1-R0 | Wolfspeed, Inc. |
Description: 900W,48V,758-960MHZ,GANHEMT(50PC Packaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 758MHz ~ 960MHz Power - Output: 900W Gain: 18dB Technology: HEMT Supplier Device Package: H-37248C-4 Part Status: Active Voltage - Rated: 48 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GTRB097152FC-V1-R2 | Wolfspeed, Inc. |
Description: 900W,48V,758-960MHZ,GANHEMT(250P Packaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 758MHz ~ 960MHz Power - Output: 900W Gain: 18dB Technology: HEMT Supplier Device Package: H-37248C-4 Part Status: Active Voltage - Rated: 48 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GTRB206002FC/1-V1-R0 | Wolfspeed, Inc. |
Description: RF MOSFET HEMT H-37248C-4 Packaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 1.93GHz ~ 2.02GHz Power - Output: 500W Gain: 14.8dB Technology: HEMT Supplier Device Package: H-37248C-4 Voltage - Rated: 48 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GTRB206002FC/1-V1-R2 | Wolfspeed, Inc. |
Description: RF MOSFET HEMT H-37248C-4 Packaging: Tape & Reel (TR) Package / Case: H-37248C-4 Mounting Type: Surface Mount Frequency: 1.93GHz ~ 2.02GHz Power - Output: 500W Gain: 14.8dB Technology: HEMT Supplier Device Package: H-37248C-4 Voltage - Rated: 48 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GTRB246608FC-V1-R0 | Wolfspeed, Inc. |
Description: 500W, 48V, 2300-2400 MHZ, GAN-SI Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GTRB246608FC-V1-R2 | Wolfspeed, Inc. |
Description: 500W, 48V, 2300-2400 MHZ, GAN-SI Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GTVA107001FC-V1-R0 | Wolfspeed, Inc. |
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZPackaging: Cut Tape (CT) Package / Case: H-37248-2 Mounting Type: Surface Mount Frequency: 1.4GHz Power - Output: 700W Gain: 20dB Technology: HEMT Supplier Device Package: H-37248-2 Part Status: Active Voltage - Rated: 125 V Voltage - Test: 50 V Current - Test: 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GTVA107001FC-V1-R0 | Wolfspeed, Inc. |
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZPackaging: Tape & Reel (TR) Package / Case: H-37248-2 Mounting Type: Surface Mount Frequency: 1.4GHz Power - Output: 700W Gain: 20dB Technology: HEMT Supplier Device Package: H-37248-2 Part Status: Active Voltage - Rated: 125 V Voltage - Test: 50 V Current - Test: 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GTVA261701FA-V1-R0 | Wolfspeed, Inc. |
Description: GAN SIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
HAS175M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 175APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 175A FET Feature: Silicon Carbide (SiC) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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HAS350M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 350APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 350A FET Feature: Silicon Carbide (SiC) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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HAS530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 530APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 530A FET Feature: Silicon Carbide (SiC) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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KIT8020-CRD-5FF0917P-2 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CREES SIC MOSFETPackaging: Box Function: Half H-Bridge Driver (External FET) Type: Power Management Utilized IC / Part: C3M0075120K Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| KIT8020-CRD-8FF1217P-1 | Wolfspeed, Inc. |
Description: EVAL BOARD C2M0280120D C4D20120D Packaging: Box Function: Half H-Bridge Driver (External FET) Type: Power Management Contents: Board(s) Utilized IC / Part: C2M0280120D, C4D20120D Supplied Contents: Board(s) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIT-CRD-025DD17P-J | Wolfspeed, Inc. |
Description: 25W AUXILIARY POWER FLYBACK EVALPackaging: Box Voltage - Output: 15V Voltage - Input: 60V ~ 1000V Contents: Board(s) Regulator Topology: Flyback Main Purpose: DC/DC Converter Outputs and Type: 2 Non-Isolated Outputs Power - Output: 25W |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-3DD065P | Wolfspeed, Inc. |
Description: 650V SIC FET BUCK-BOOST EVAL KIT Packaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: 3DD065P Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KIT-CRD-3DD12P | Wolfspeed, Inc. |
Description: C3M SIC BUCK-BOOST EVAL KITPackaging: Box Voltage - Output: 800V Voltage - Input: 800V Contents: Board(s) Frequency - Switching: 100kHz Regulator Topology: Boost, Buck Board Type: Fully Populated Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up or Down Outputs and Type: 1 Non-Isolated Output Power - Output: 2.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KIT-CRD-8FF65P | Wolfspeed, Inc. |
Description: EVAL KIT FOR SIC MOSFET Packaging: Box Function: Gate Driver Type: Power Management Supplied Contents: Board(s) Part Status: Active |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-8FF90P | Wolfspeed, Inc. |
Description: EVAL BOARD FOR ADUM4121 Packaging: Box Function: MOSFET Type: Power Management Contents: Board(s) Utilized IC / Part: ADuM4121, C3M0065090J Supplied Contents: Board(s) Primary Attributes: 15V Power Supply Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KIT-CRD-CIL12N-BM | Wolfspeed, Inc. |
Description: EVAL BOARD FOR BM MODULESPackaging: Box Function: MOSFET Power Module (Half-Bridge) Type: Power Management Contents: Board(s) Utilized IC / Part: BM Modules Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-CIL12N-FMA | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAB011M12FM3Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CAB011M12FM3, CAB016M12FM3, CGD12HB00D Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-CIL12N-FMB | Wolfspeed, Inc. |
Description: DYNAMIC PERFORMANCE EVALUATION BPackaging: Box Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-CIL12N-FMC | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CCB021M12FM3Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CCB021M12FM3, CCB032M12FM3, CGD12HB00D Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-CIL12N-GMA | Wolfspeed, Inc. |
Description: CAB GM3 DOUBLE PULSE DYNAMIC EVAPackaging: Box Function: Half H-Bridge Driver (Internal FET) Type: Power Management Utilized IC / Part: GM3 Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| KIT-CRD-CIL12N-HM3 | Wolfspeed, Inc. |
Description: DOUBLE PULSE DYNAMIC EVALUATION Packaging: Box Function: MOSFET Power Module (Half-Bridge) Type: Power Management Utilized IC / Part: CAB760M12HM3, CAS480M12HM3 Supplied Contents: Board(s) Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KIT-CRD-CIL12N-XM3 | Wolfspeed, Inc. |
Description: DOUBLE PULSE DYNAMIC EVALUATIONPackaging: Box Function: MOSFET Power Module (Half-Bridge) Type: Power Management Utilized IC / Part: CAB400M12XM3, CAB425M12XM3, CAB450M12XM3 Supplied Contents: Board(s) Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-CIL17N-BM | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAS310M17BM3Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CAS310M17BM3 Primary Attributes: 2-Channel (Dual) Secondary Attributes: On-Board Test Points Embedded: No |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
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KIT-CRD-CIL17N-HM3 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR BM MODULESPackaging: Box Function: MOSFET Power Module (Half-Bridge) Type: Power Management Contents: Board(s) Utilized IC / Part: BM Modules Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-CIL17N-XM | Wolfspeed, Inc. |
Description: DYNAMIC PERFORMANCE EVALUATION BPackaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CAB320M17XM3 Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Secondary Attributes: On-Board Test Points Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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KIT-CRD-CIL23N-GMA | Wolfspeed, Inc. |
Description: EVAL BOARDPackaging: Bulk Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CGD1700HB2P Primary Attributes: Isolated Secondary Attributes: On-Board Test Points Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| LTA/GTRB206002FC/1-V1 | Wolfspeed, Inc. |
Description: AMPLIFIER, 1930-2020MHZ, GTRB206 Packaging: Bulk For Use With/Related Products: GTRB206002FC/1-V1 Frequency: 1.93GHz ~ 2.02GHz Type: HEMT Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. |
| E4D02120E-TR |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| E4D02120E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 182.10 грн |
| 10+ | 145.47 грн |
| 100+ | 115.84 грн |
| 500+ | 91.98 грн |
| 1000+ | 78.05 грн |
| E4D10120A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1.2KV 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 386 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1028.91 грн |
| 50+ | 607.36 грн |
| 100+ | 594.87 грн |
| E4D20120A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1583.38 грн |
| 50+ | 1200.43 грн |
| E4D20120D |
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Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Grade: Automotive
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Grade: Automotive
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
на замовлення 131 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1986.78 грн |
| 30+ | 1234.33 грн |
| 120+ | 1116.35 грн |
| E4D20120G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1783.44 грн |
| 50+ | 1042.09 грн |
| 100+ | 977.32 грн |
| 500+ | 913.92 грн |
| E4M0013120K |
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Виробник: Wolfspeed, Inc.
Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6691.18 грн |
| 30+ | 5754.12 грн |
| E4M0015075J2-TR |
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Виробник: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
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| E4M0015075J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
на замовлення 105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3027.12 грн |
| 10+ | 2376.27 грн |
| 100+ | 2140.36 грн |
| E4M0025075J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
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| E4M0025075J2-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
на замовлення 391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1969.63 грн |
| 10+ | 1497.45 грн |
| 100+ | 1340.45 грн |
| E4M0025075K1 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
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| E6D10065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Qualification: AEC-Q101
Description: SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Qualification: AEC-Q101
на замовлення 985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 330.72 грн |
| 10+ | 208.38 грн |
| 50+ | 162.05 грн |
| 100+ | 138.21 грн |
| 250+ | 137.19 грн |
| E6D10065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 396.05 грн |
| 10+ | 249.19 грн |
| 50+ | 193.38 грн |
| 100+ | 164.79 грн |
| 250+ | 146.79 грн |
| 500+ | 135.72 грн |
| 1000+ | 127.35 грн |
| E6D20065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V TO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIC 650V TO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
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| E6D20065D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 34A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIC 650V 34A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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| E6D20065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 68A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIC 650V 68A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
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| E6D20065H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 59A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIC 650V TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 59A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Qualification: AEC-Q101
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| E6D30065D |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIC 650V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIC 650V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 890.09 грн |
| 10+ | 588.19 грн |
| 30+ | 505.83 грн |
| 120+ | 403.61 грн |
| 270+ | 389.27 грн |
| E6D40065H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 109A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2460pF @ 0V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 109A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2460pF @ 0V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Qualification: AEC-Q101
на замовлення 320 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1243.67 грн |
| 30+ | 738.78 грн |
| 120+ | 638.34 грн |
| EAB450M12XM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Part Status: Active
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 77403.39 грн |
| FXA/WS1A2639V1-05 |
Виробник: Wolfspeed, Inc.
Description: 38.5 DBM AVG, 48V, 2.495-2.690 G
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
Description: 38.5 DBM AVG, 48V, 2.495-2.690 G
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
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| FXL/WS1A2639V1-06 |
Виробник: Wolfspeed, Inc.
Description: INTEGRATED DRIVER+FINAL STAGE 2.
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
Description: INTEGRATED DRIVER+FINAL STAGE 2.
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
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| GTRA214602FC-V1-R0 |
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Виробник: Wolfspeed, Inc.
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
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| GTRA214602FC-V1-R2 |
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Виробник: Wolfspeed, Inc.
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
товару немає в наявності
В кошику
од. на суму грн.
| GTRA262802FC-V2-R0 |
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Виробник: Wolfspeed, Inc.
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.49GHz ~ 2.69GHz
Power - Output: 250W
Gain: 14dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 200 mA
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.49GHz ~ 2.69GHz
Power - Output: 250W
Gain: 14dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 200 mA
товару немає в наявності
В кошику
од. на суму грн.
| GTRA262802FC-V2-R2 |
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Виробник: Wolfspeed, Inc.
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.49GHz ~ 2.69GHz
Power - Output: 250W
Gain: 14dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 200 mA
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.49GHz ~ 2.69GHz
Power - Output: 250W
Gain: 14dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 200 mA
товару немає в наявності
В кошику
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| GTRA384802FC-V1-R0 |
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Виробник: Wolfspeed, Inc.
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Cut Tape (CT)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Cut Tape (CT)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 19202.23 грн |
| 10+ | 17709.87 грн |
| 25+ | 17319.21 грн |
| GTRA384802FC-V1-R0 |
![]() |
Виробник: Wolfspeed, Inc.
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Tape & Reel (TR)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Tape & Reel (TR)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 17985.34 грн |
| GTRB097152FC-V1-R0 |
Виробник: Wolfspeed, Inc.
Description: 900W,48V,758-960MHZ,GANHEMT(50PC
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 758MHz ~ 960MHz
Power - Output: 900W
Gain: 18dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Part Status: Active
Voltage - Rated: 48 V
Description: 900W,48V,758-960MHZ,GANHEMT(50PC
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 758MHz ~ 960MHz
Power - Output: 900W
Gain: 18dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Part Status: Active
Voltage - Rated: 48 V
товару немає в наявності
В кошику
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| GTRB097152FC-V1-R2 |
Виробник: Wolfspeed, Inc.
Description: 900W,48V,758-960MHZ,GANHEMT(250P
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 758MHz ~ 960MHz
Power - Output: 900W
Gain: 18dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Part Status: Active
Voltage - Rated: 48 V
Description: 900W,48V,758-960MHZ,GANHEMT(250P
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 758MHz ~ 960MHz
Power - Output: 900W
Gain: 18dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Part Status: Active
Voltage - Rated: 48 V
товару немає в наявності
В кошику
од. на суму грн.
| GTRB206002FC/1-V1-R0 |
Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
товару немає в наявності
В кошику
од. на суму грн.
| GTRB206002FC/1-V1-R2 |
Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
товару немає в наявності
В кошику
од. на суму грн.
| GTVA107001FC-V1-R0 |
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Виробник: Wolfspeed, Inc.
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Packaging: Cut Tape (CT)
Package / Case: H-37248-2
Mounting Type: Surface Mount
Frequency: 1.4GHz
Power - Output: 700W
Gain: 20dB
Technology: HEMT
Supplier Device Package: H-37248-2
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 100 mA
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Packaging: Cut Tape (CT)
Package / Case: H-37248-2
Mounting Type: Surface Mount
Frequency: 1.4GHz
Power - Output: 700W
Gain: 20dB
Technology: HEMT
Supplier Device Package: H-37248-2
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 100 mA
товару немає в наявності
В кошику
од. на суму грн.
| GTVA107001FC-V1-R0 |
![]() |
Виробник: Wolfspeed, Inc.
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-2
Mounting Type: Surface Mount
Frequency: 1.4GHz
Power - Output: 700W
Gain: 20dB
Technology: HEMT
Supplier Device Package: H-37248-2
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 100 mA
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-2
Mounting Type: Surface Mount
Frequency: 1.4GHz
Power - Output: 700W
Gain: 20dB
Technology: HEMT
Supplier Device Package: H-37248-2
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 100 mA
товару немає в наявності
В кошику
од. на суму грн.
| GTVA261701FA-V1-R0 |
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Виробник: Wolfspeed, Inc.
Description: GAN SIC
Description: GAN SIC
товару немає в наявності
В кошику
од. на суму грн.
| HAS175M12BM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 175A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 175A
FET Feature: Silicon Carbide (SiC)
Description: MOSFET 2N-CH 1200V 175A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 175A
FET Feature: Silicon Carbide (SiC)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 45356.13 грн |
| HAS350M12BM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 350A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A
FET Feature: Silicon Carbide (SiC)
Description: MOSFET 2N-CH 1200V 350A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A
FET Feature: Silicon Carbide (SiC)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 76118.07 грн |
| HAS530M12BM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
FET Feature: Silicon Carbide (SiC)
Description: MOSFET 2N-CH 1200V 530A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
FET Feature: Silicon Carbide (SiC)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 86001.32 грн |
| KIT8020-CRD-5FF0917P-2 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CREES SIC MOSFET
Packaging: Box
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: C3M0075120K
Supplied Contents: Board(s)
Description: EVAL BOARD FOR CREES SIC MOSFET
Packaging: Box
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: C3M0075120K
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| KIT8020-CRD-8FF1217P-1 |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD C2M0280120D C4D20120D
Packaging: Box
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: C2M0280120D, C4D20120D
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVAL BOARD C2M0280120D C4D20120D
Packaging: Box
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: C2M0280120D, C4D20120D
Supplied Contents: Board(s)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| KIT-CRD-025DD17P-J |
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Виробник: Wolfspeed, Inc.
Description: 25W AUXILIARY POWER FLYBACK EVAL
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 60V ~ 1000V
Contents: Board(s)
Regulator Topology: Flyback
Main Purpose: DC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 25W
Description: 25W AUXILIARY POWER FLYBACK EVAL
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 60V ~ 1000V
Contents: Board(s)
Regulator Topology: Flyback
Main Purpose: DC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 25W
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 12765.83 грн |
| KIT-CRD-3DD065P |
Виробник: Wolfspeed, Inc.
Description: 650V SIC FET BUCK-BOOST EVAL KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 3DD065P
Supplied Contents: Board(s)
Description: 650V SIC FET BUCK-BOOST EVAL KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 3DD065P
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| KIT-CRD-3DD12P |
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Виробник: Wolfspeed, Inc.
Description: C3M SIC BUCK-BOOST EVAL KIT
Packaging: Box
Voltage - Output: 800V
Voltage - Input: 800V
Contents: Board(s)
Frequency - Switching: 100kHz
Regulator Topology: Boost, Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Power - Output: 2.5kW
Description: C3M SIC BUCK-BOOST EVAL KIT
Packaging: Box
Voltage - Output: 800V
Voltage - Input: 800V
Contents: Board(s)
Frequency - Switching: 100kHz
Regulator Topology: Boost, Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Power - Output: 2.5kW
товару немає в наявності
В кошику
од. на суму грн.
| KIT-CRD-8FF65P |
Виробник: Wolfspeed, Inc.
Description: EVAL KIT FOR SIC MOSFET
Packaging: Box
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL KIT FOR SIC MOSFET
Packaging: Box
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 33418.33 грн |
| KIT-CRD-8FF90P |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR ADUM4121
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ADuM4121, C3M0065090J
Supplied Contents: Board(s)
Primary Attributes: 15V Power Supply
Embedded: No
Description: EVAL BOARD FOR ADUM4121
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ADuM4121, C3M0065090J
Supplied Contents: Board(s)
Primary Attributes: 15V Power Supply
Embedded: No
товару немає в наявності
В кошику
од. на суму грн.
| KIT-CRD-CIL12N-BM |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR BM MODULES
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM Modules
Embedded: No
Description: EVAL BOARD FOR BM MODULES
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM Modules
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 247415.99 грн |
| KIT-CRD-CIL12N-FMA |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAB011M12FM3
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB011M12FM3, CAB016M12FM3, CGD12HB00D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR CAB011M12FM3
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB011M12FM3, CAB016M12FM3, CGD12HB00D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 75668.13 грн |
| KIT-CRD-CIL12N-FMB |
![]() |
Виробник: Wolfspeed, Inc.
Description: DYNAMIC PERFORMANCE EVALUATION B
Packaging: Box
Contents: Board(s)
Description: DYNAMIC PERFORMANCE EVALUATION B
Packaging: Box
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 75668.13 грн |
| KIT-CRD-CIL12N-FMC |
![]() |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CCB021M12FM3
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3, CCB032M12FM3, CGD12HB00D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR CCB021M12FM3
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3, CCB032M12FM3, CGD12HB00D
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 75668.13 грн |
| KIT-CRD-CIL12N-GMA |
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Виробник: Wolfspeed, Inc.
Description: CAB GM3 DOUBLE PULSE DYNAMIC EVA
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Utilized IC / Part: GM3
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: CAB GM3 DOUBLE PULSE DYNAMIC EVA
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Utilized IC / Part: GM3
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 94786.24 грн |
| KIT-CRD-CIL12N-HM3 |
Виробник: Wolfspeed, Inc.
Description: DOUBLE PULSE DYNAMIC EVALUATION
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Utilized IC / Part: CAB760M12HM3, CAS480M12HM3
Supplied Contents: Board(s)
Embedded: No
Description: DOUBLE PULSE DYNAMIC EVALUATION
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Utilized IC / Part: CAB760M12HM3, CAS480M12HM3
Supplied Contents: Board(s)
Embedded: No
товару немає в наявності
В кошику
од. на суму грн.
| KIT-CRD-CIL12N-XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: DOUBLE PULSE DYNAMIC EVALUATION
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Utilized IC / Part: CAB400M12XM3, CAB425M12XM3, CAB450M12XM3
Supplied Contents: Board(s)
Embedded: No
Description: DOUBLE PULSE DYNAMIC EVALUATION
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Utilized IC / Part: CAB400M12XM3, CAB425M12XM3, CAB450M12XM3
Supplied Contents: Board(s)
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 238654.74 грн |
| KIT-CRD-CIL17N-BM |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAS310M17BM3
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAS310M17BM3
Primary Attributes: 2-Channel (Dual)
Secondary Attributes: On-Board Test Points
Embedded: No
Description: EVAL BOARD FOR CAS310M17BM3
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAS310M17BM3
Primary Attributes: 2-Channel (Dual)
Secondary Attributes: On-Board Test Points
Embedded: No
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 272754.91 грн |
| KIT-CRD-CIL17N-HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR BM MODULES
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM Modules
Embedded: No
Description: EVAL BOARD FOR BM MODULES
Packaging: Box
Function: MOSFET Power Module (Half-Bridge)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM Modules
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 325258.71 грн |
| KIT-CRD-CIL17N-XM |
![]() |
Виробник: Wolfspeed, Inc.
Description: DYNAMIC PERFORMANCE EVALUATION B
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB320M17XM3
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Secondary Attributes: On-Board Test Points
Embedded: No
Description: DYNAMIC PERFORMANCE EVALUATION B
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB320M17XM3
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Secondary Attributes: On-Board Test Points
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 251091.49 грн |
| KIT-CRD-CIL23N-GMA |
![]() |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1700HB2P
Primary Attributes: Isolated
Secondary Attributes: On-Board Test Points
Embedded: No
Description: EVAL BOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1700HB2P
Primary Attributes: Isolated
Secondary Attributes: On-Board Test Points
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 110113.73 грн |
| LTA/GTRB206002FC/1-V1 |
Виробник: Wolfspeed, Inc.
Description: AMPLIFIER, 1930-2020MHZ, GTRB206
Packaging: Bulk
For Use With/Related Products: GTRB206002FC/1-V1
Frequency: 1.93GHz ~ 2.02GHz
Type: HEMT
Supplied Contents: Board(s)
Description: AMPLIFIER, 1930-2020MHZ, GTRB206
Packaging: Bulk
For Use With/Related Products: GTRB206002FC/1-V1
Frequency: 1.93GHz ~ 2.02GHz
Type: HEMT
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.































