Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (565) > Сторінка 4 з 10
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C4D10120G | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 10A, 1200V, Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
![]() |
C4D10120H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 754pF @ 0V, 1MHz Current - Average Rectified (Io): 31.5A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 721 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C4D15120A | Wolfspeed, Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C4D15120D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 24.5A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C4D15120H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 284 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C4D20120A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Current - Average Rectified (Io): 54.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 3566 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C4D20120D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 34A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 526 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
C4D20120G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 56A TO263-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
![]() |
C4D20120H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Current - Average Rectified (Io): 54A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C4D30120D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 1200V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 21.5A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C4D30120H | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2177pF @ 0V, 1MHz Current - Average Rectified (Io): 94A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 745 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D40120D | Wolfspeed, Inc. |
![]() |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C4D40120H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2809pF @ 0V, 1MHz Current - Average Rectified (Io): 128A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
на замовлення 764 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C5D05170H | Wolfspeed, Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C5D25170H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.7KV 70A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1950pF @ 0V, 1MHz Current - Average Rectified (Io): 70A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 200 µA @ 1700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C5D50065D | Wolfspeed, Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D04065A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 18A Supplier Device Package: TO-220-2 Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A |
на замовлення 915 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D04065E | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 256pF @ 0V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 3324 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D04065E-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 256pF @ 0V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D04065E-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 256pF @ 0V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2819 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D05170H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 638pF @ 0V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 9 µA @ 1700 V |
на замовлення 411 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 883 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065E | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 1736 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065E-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D06065E-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 2413 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065G | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 822 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065G-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065G-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2496 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065Q-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2353 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D06065Q-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D08065A | Wolfspeed, Inc. |
![]() |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D08065E | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 518pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 4292 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D08065E-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 518pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D08065E-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 518pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D08065G | Wolfspeed, Inc. |
![]() |
на замовлення 1124 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D08065Q-TR | Wolfspeed, Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D08065Q-TR | Wolfspeed, Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D10065A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 37A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 678 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D10065E | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 3226 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D10065E-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D10065E-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D10065G | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D10065G-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D10065G-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D10065Q-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
![]() |
C6D10065Q-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 1633 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D10170H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1227pF @ 0V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 18 µA @ 1700 V |
на замовлення 810 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D20065A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1153pF @ 0V, 1MHz Current - Average Rectified (Io): 66A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 375 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D20065D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D20065D1 | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 885 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D20065G | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 974 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D20065G-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D20065G-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D20065H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 578 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
C6D25170H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3108pF @ 0V, 1MHz Current - Average Rectified (Io): 83A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Current - Reverse Leakage @ Vr: 45 µA @ 1700 V |
на замовлення 204 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
C6D30065A | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO220 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
C6D30065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 50A TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
C6D30065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 95A TO263 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
![]() |
C6D30065H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Supplier Device Package: TO-247-2 |
на замовлення 372 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
C6D40065A | Wolfspeed, Inc. |
Description: WOLFSPEED SIC, SCHOTTKY DIODE Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
C4D10120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 31.5A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 31.5A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 721 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 631.42 грн |
30+ | 387.10 грн |
C4D15120A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SCHOTTKY 1.2KV 10A TO220-2
Description: DIODE SCHOTTKY 1.2KV 10A TO220-2
товару немає в наявності
В кошику
од. на суму грн.
C4D15120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
C4D15120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1525.94 грн |
10+ | 1350.75 грн |
100+ | 1140.80 грн |
C4D20120A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 3566 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1758.61 грн |
50+ | 1025.49 грн |
100+ | 961.41 грн |
500+ | 896.26 грн |
C4D20120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 526 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1175.70 грн |
30+ | 697.11 грн |
120+ | 601.86 грн |
510+ | 535.37 грн |
C4D20120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 54A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1215.16 грн |
30+ | 722.41 грн |
120+ | 624.44 грн |
C4D30120D |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 21.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 21.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 246 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2621.89 грн |
30+ | 2093.48 грн |
120+ | 1962.62 грн |
C4D30120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 94A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2177pF @ 0V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SIL CARB 1200V 94A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2177pF @ 0V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 745 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1434.68 грн |
30+ | 1012.42 грн |
C4D40120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Description: DIODE ARRAY SCHOTTKY 1200V TO247
на замовлення 226 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3120.94 грн |
10+ | 2803.23 грн |
100+ | 2433.93 грн |
C4D40120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 128A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 128A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
на замовлення 764 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2176.27 грн |
30+ | 1355.79 грн |
120+ | 1293.99 грн |
C5D05170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: 5A, 1700V, G5 ZREC SIC SCHOTTKY
Description: 5A, 1700V, G5 ZREC SIC SCHOTTKY
товару немає в наявності
В кошику
од. на суму грн.
C5D25170H |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.7KV 70A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1950pF @ 0V, 1MHz
Current - Average Rectified (Io): 70A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 70A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1950pF @ 0V, 1MHz
Current - Average Rectified (Io): 70A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
товару немає в наявності
В кошику
од. на суму грн.
C5D50065D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 100A TO247-3
Description: DIODE SIL CARB 650V 100A TO247-3
товару немає в наявності
В кошику
од. на суму грн.
C6D04065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 18A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
Description: DIODE SIL CARB 650V 18A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
на замовлення 915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 200.61 грн |
50+ | 94.91 грн |
100+ | 85.37 грн |
500+ | 64.41 грн |
C6D04065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 3324 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.94 грн |
75+ | 89.02 грн |
150+ | 83.09 грн |
525+ | 68.41 грн |
1050+ | 61.74 грн |
2025+ | 58.90 грн |
C6D04065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
C6D04065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2819 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.94 грн |
10+ | 132.45 грн |
100+ | 91.01 грн |
500+ | 68.77 грн |
1000+ | 63.43 грн |
C6D05170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 638pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 9 µA @ 1700 V
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 638pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 9 µA @ 1700 V
на замовлення 411 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 832.85 грн |
30+ | 477.33 грн |
120+ | 453.78 грн |
C6D06065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 883 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 279.54 грн |
50+ | 136.02 грн |
100+ | 123.12 грн |
500+ | 94.31 грн |
C6D06065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 1736 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 286.94 грн |
75+ | 102.67 грн |
150+ | 101.21 грн |
525+ | 89.47 грн |
1050+ | 89.29 грн |
C6D06065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
C6D06065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 286.94 грн |
10+ | 180.59 грн |
100+ | 126.28 грн |
500+ | 96.73 грн |
1000+ | 89.74 грн |
C6D06065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 822 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.94 грн |
50+ | 162.78 грн |
100+ | 139.52 грн |
500+ | 116.39 грн |
C6D06065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 128.79 грн |
1600+ | 106.19 грн |
2400+ | 99.99 грн |
C6D06065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2496 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.94 грн |
10+ | 172.51 грн |
100+ | 139.52 грн |
C6D06065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.94 грн |
10+ | 172.51 грн |
100+ | 139.52 грн |
500+ | 116.39 грн |
1000+ | 99.66 грн |
C6D06065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
C6D08065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V G6 ZREC SIC SCHOTTKY DIO
Description: 8A 650V G6 ZREC SIC SCHOTTKY DIO
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 382.31 грн |
10+ | 330.38 грн |
C6D08065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 4292 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 356.82 грн |
75+ | 161.00 грн |
150+ | 152.57 грн |
525+ | 123.75 грн |
1050+ | 115.34 грн |
2025+ | 114.22 грн |
C6D08065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
C6D08065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 284.47 грн |
10+ | 229.91 грн |
100+ | 186.03 грн |
500+ | 155.18 грн |
1000+ | 132.88 грн |
C6D08065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY DIODE
Description: 8A 650V SIC SCHOTTKY DIODE
на замовлення 1124 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 269.67 грн |
10+ | 233.71 грн |
100+ | 191.53 грн |
500+ | 153.02 грн |
1000+ | 129.05 грн |
C6D08065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY QFN
Description: 8A 650V SIC SCHOTTKY QFN
товару немає в наявності
В кошику
од. на суму грн.
C6D08065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY QFN
Description: 8A 650V SIC SCHOTTKY QFN
товару немає в наявності
В кошику
од. на суму грн.
C6D10065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.79 грн |
50+ | 205.36 грн |
100+ | 187.22 грн |
500+ | 145.90 грн |
C6D10065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 35A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 35A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 3226 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 405.33 грн |
75+ | 186.59 грн |
150+ | 177.16 грн |
525+ | 144.52 грн |
1050+ | 137.57 грн |
C6D10065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
C6D10065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.79 грн |
10+ | 261.66 грн |
100+ | 187.22 грн |
500+ | 145.90 грн |
1000+ | 138.12 грн |
C6D10065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 253 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.79 грн |
50+ | 205.36 грн |
100+ | 187.22 грн |
C6D10065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 152.84 грн |
C6D10065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.79 грн |
10+ | 261.66 грн |
100+ | 187.22 грн |
C6D10065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
C6D10065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1633 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.79 грн |
10+ | 261.66 грн |
100+ | 187.22 грн |
500+ | 145.90 грн |
1000+ | 138.12 грн |
C6D10170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 40A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
Description: DIODE SIL CARB 1700V 40A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
на замовлення 810 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1340.95 грн |
30+ | 806.07 грн |
120+ | 717.49 грн |
C6D20065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 640.47 грн |
50+ | 492.32 грн |
100+ | 440.49 грн |
C6D20065D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 64A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC 650V 64A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 640.47 грн |
30+ | 492.31 грн |
120+ | 440.50 грн |
C6D20065D1 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 885 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 693.09 грн |
30+ | 533.01 грн |
120+ | 476.89 грн |
510+ | 394.89 грн |
C6D20065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 974 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 693.09 грн |
50+ | 533.00 грн |
100+ | 476.89 грн |
500+ | 394.89 грн |
C6D20065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 418.57 грн |
C6D20065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 664.31 грн |
10+ | 548.18 грн |
100+ | 456.81 грн |
C6D20065H |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 578 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 664.31 грн |
30+ | 510.55 грн |
120+ | 456.81 грн |
510+ | 378.26 грн |
C6D25170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 83A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Description: DIODE SIL CARB 1700V 83A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
на замовлення 204 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3131.63 грн |
30+ | 2037.82 грн |
C6D30065H |
![]() |
Виробник: Wolfspeed, Inc.
Description: 30A, 650V SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
Description: 30A, 650V SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
на замовлення 372 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 766.26 грн |
30+ | 455.32 грн |