Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (579) > Сторінка 4 з 10
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C4D10120E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 33A TO2522Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 754pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 2630 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D10120E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 33A TO2522Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 754pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| C4D10120G | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 10A, 1200V, Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
C4D10120H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 31.5A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 754pF @ 0V, 1MHz Current - Average Rectified (Io): 31.5A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 721 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D15120A | Wolfspeed, Inc. |
Description: DIODE SCHOTTKY 1.2KV 10A TO220-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C4D15120D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 1200V TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 24.5A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C4D15120H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 39A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 284 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D20120A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 54.5A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Current - Average Rectified (Io): 54.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 3566 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D20120D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 1200V 34A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 34A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 526 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| C4D20120G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 56A TO263-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
C4D20120H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 54A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Current - Average Rectified (Io): 54A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D30120D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 1200V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 21.5A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D30120H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 94A TO2472Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2177pF @ 0V, 1MHz Current - Average Rectified (Io): 94A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 745 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
C4D40120D | Wolfspeed, Inc. |
Description: DIODE ARRAY SCHOTTKY 1200V TO247 |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C4D40120H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 128A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2809pF @ 0V, 1MHz Current - Average Rectified (Io): 128A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
на замовлення 764 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C5D05170H | Wolfspeed, Inc. |
Description: 5A, 1700V, G5 ZREC SIC SCHOTTKY |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C5D25170H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.7KV 70A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1950pF @ 0V, 1MHz Current - Average Rectified (Io): 70A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 200 µA @ 1700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
C5D50065D | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 100A TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D04065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 18A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 18A Supplier Device Package: TO-220-2 Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A |
на замовлення 915 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D04065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 16A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 256pF @ 0V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 3324 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D04065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 16A TO2522Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 256pF @ 0V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D04065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 16A TO2522Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 256pF @ 0V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2819 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D05170H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1700V 21A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 638pF @ 0V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 9 µA @ 1700 V |
на замовлення 584 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D06065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 24A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 883 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D06065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 23A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 1736 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D06065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 23A TO2522Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D06065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 23A TO2522Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 394pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 2413 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D06065G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 23A TO263-2Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 822 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D06065G-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 23A TO263-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D06065G-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 23A TO263-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2496 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D06065Q-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 21A 4QFNPackaging: Tape & Reel (TR) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D06065Q-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 21A 4QFNPackaging: Cut Tape (CT) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 393pF @ 0V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2353 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D08065A | Wolfspeed, Inc. |
Description: 8A 650V G6 ZREC SIC SCHOTTKY DIO |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D08065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 29A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 518pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 4292 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D08065E-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 8A, 650V, TPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 518pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D08065E-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 8A, 650V, TPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 518pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D08065G | Wolfspeed, Inc. |
Description: 8A 650V SIC SCHOTTKY DIODE |
на замовлення 1124 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D08065Q-TR | Wolfspeed, Inc. |
Description: 8A 650V SIC SCHOTTKY QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D08065Q-TR | Wolfspeed, Inc. |
Description: 8A 650V SIC SCHOTTKY QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D10065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 37A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 37A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 678 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D10065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 35A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 3226 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D10065E-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 10A, 650V,Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D10065E-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 10A, 650V,Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D10065G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 36A TO263-2Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D10065G-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 36A TO263-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D10065G-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 36A TO263-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D10065Q-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 39A 4QFNPackaging: Tape & Reel (TR) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
C6D10065Q-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 39A 4QFNPackaging: Cut Tape (CT) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 1633 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D10170H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1700V 40A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1227pF @ 0V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 18 µA @ 1700 V |
на замовлення 622 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D20065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 66A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1153pF @ 0V, 1MHz Current - Average Rectified (Io): 66A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 375 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D20065D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 650V 64A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D20065D1 | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 64A, 650V,Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 885 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D20065G | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 64A, 650V,Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 974 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D20065G-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE,64A, 650V, TPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D20065G-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE,64A, 650V, TPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D20065H | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE,64A, 650V, TPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
на замовлення 578 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
C6D25170H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1700V 83A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3108pF @ 0V, 1MHz Current - Average Rectified (Io): 83A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Current - Reverse Leakage @ Vr: 45 µA @ 1700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| C6D30065A | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO220 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| C6D30065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 50A TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| C6D30065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 95A TO263 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| C4D10120E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 2630 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 939.08 грн |
| 10+ | 629.95 грн |
| 100+ | 494.31 грн |
| C4D10120E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 419.38 грн |
| C4D10120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 31.5A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 31.5A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 721 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 627.14 грн |
| 30+ | 384.47 грн |
| C4D15120A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SCHOTTKY 1.2KV 10A TO220-2
Description: DIODE SCHOTTKY 1.2KV 10A TO220-2
товару немає в наявності
В кошику
од. на суму грн.
| C4D15120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| C4D15120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1515.60 грн |
| 10+ | 1341.59 грн |
| 100+ | 1133.07 грн |
| C4D20120A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 3566 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1746.70 грн |
| 50+ | 1018.54 грн |
| 100+ | 954.90 грн |
| 500+ | 890.19 грн |
| C4D20120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 526 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1167.73 грн |
| 30+ | 692.38 грн |
| 120+ | 597.78 грн |
| 510+ | 531.74 грн |
| C4D20120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 54A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1206.93 грн |
| 30+ | 717.52 грн |
| 120+ | 620.21 грн |
| C4D30120D |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 21.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 21.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 246 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2604.12 грн |
| 30+ | 2079.29 грн |
| 120+ | 1949.32 грн |
| C4D30120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 94A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2177pF @ 0V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SIL CARB 1200V 94A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2177pF @ 0V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1424.96 грн |
| 30+ | 1005.56 грн |
| C4D40120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Description: DIODE ARRAY SCHOTTKY 1200V TO247
на замовлення 226 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3099.79 грн |
| 10+ | 2784.23 грн |
| 100+ | 2417.44 грн |
| C4D40120H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 128A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 128A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
на замовлення 764 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2161.53 грн |
| 30+ | 1346.60 грн |
| 120+ | 1285.22 грн |
| C5D05170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: 5A, 1700V, G5 ZREC SIC SCHOTTKY
Description: 5A, 1700V, G5 ZREC SIC SCHOTTKY
товару немає в наявності
В кошику
од. на суму грн.
| C5D25170H |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.7KV 70A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1950pF @ 0V, 1MHz
Current - Average Rectified (Io): 70A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 70A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1950pF @ 0V, 1MHz
Current - Average Rectified (Io): 70A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
товару немає в наявності
В кошику
од. на суму грн.
| C5D50065D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 100A TO247-3
Description: DIODE SIL CARB 650V 100A TO247-3
товару немає в наявності
В кошику
од. на суму грн.
| C6D04065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 18A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
Description: DIODE SIL CARB 650V 18A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
на замовлення 915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.25 грн |
| 50+ | 94.27 грн |
| 100+ | 84.79 грн |
| 500+ | 63.98 грн |
| C6D04065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 3324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.50 грн |
| 75+ | 88.42 грн |
| 150+ | 82.53 грн |
| 525+ | 67.94 грн |
| 1050+ | 61.33 грн |
| 2025+ | 58.50 грн |
| C6D04065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| C6D04065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2819 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.50 грн |
| 10+ | 131.56 грн |
| 100+ | 90.39 грн |
| 500+ | 68.31 грн |
| 1000+ | 63.00 грн |
| C6D05170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 638pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 9 µA @ 1700 V
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 638pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 9 µA @ 1700 V
на замовлення 584 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 788.01 грн |
| 30+ | 450.97 грн |
| 120+ | 383.54 грн |
| 510+ | 317.89 грн |
| C6D06065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 883 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.64 грн |
| 50+ | 135.10 грн |
| 100+ | 122.29 грн |
| 500+ | 93.67 грн |
| C6D06065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 1736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 284.99 грн |
| 75+ | 101.97 грн |
| 150+ | 100.52 грн |
| 525+ | 88.86 грн |
| 1050+ | 88.69 грн |
| C6D06065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| C6D06065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 284.99 грн |
| 10+ | 179.37 грн |
| 100+ | 125.42 грн |
| 500+ | 96.08 грн |
| 1000+ | 89.13 грн |
| C6D06065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 822 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.50 грн |
| 50+ | 161.67 грн |
| 100+ | 138.58 грн |
| 500+ | 115.60 грн |
| C6D06065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 127.92 грн |
| 1600+ | 105.47 грн |
| 2400+ | 99.31 грн |
| C6D06065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2496 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.50 грн |
| 10+ | 171.35 грн |
| 100+ | 138.58 грн |
| C6D06065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| C6D06065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.50 грн |
| 10+ | 171.35 грн |
| 100+ | 138.58 грн |
| 500+ | 115.60 грн |
| 1000+ | 98.98 грн |
| C6D08065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V G6 ZREC SIC SCHOTTKY DIO
Description: 8A 650V G6 ZREC SIC SCHOTTKY DIO
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 379.72 грн |
| 10+ | 328.14 грн |
| C6D08065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 4292 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 354.40 грн |
| 75+ | 159.91 грн |
| 150+ | 151.54 грн |
| 525+ | 122.91 грн |
| 1050+ | 114.56 грн |
| 2025+ | 113.45 грн |
| C6D08065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.54 грн |
| 10+ | 228.36 грн |
| 100+ | 184.77 грн |
| 500+ | 154.13 грн |
| 1000+ | 131.98 грн |
| C6D08065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| C6D08065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY DIODE
Description: 8A 650V SIC SCHOTTKY DIODE
на замовлення 1124 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 267.84 грн |
| 10+ | 232.13 грн |
| 100+ | 190.23 грн |
| 500+ | 151.98 грн |
| 1000+ | 128.17 грн |
| C6D08065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY QFN
Description: 8A 650V SIC SCHOTTKY QFN
товару немає в наявності
В кошику
од. на суму грн.
| C6D08065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY QFN
Description: 8A 650V SIC SCHOTTKY QFN
товару немає в наявності
В кошику
од. на суму грн.
| C6D10065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 405.03 грн |
| 50+ | 203.96 грн |
| 100+ | 185.96 грн |
| 500+ | 144.91 грн |
| C6D10065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 35A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 35A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 3226 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 402.58 грн |
| 75+ | 185.33 грн |
| 150+ | 175.96 грн |
| 525+ | 143.54 грн |
| 1050+ | 136.64 грн |
| C6D10065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| C6D10065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 405.03 грн |
| 10+ | 259.89 грн |
| 100+ | 185.96 грн |
| 500+ | 144.91 грн |
| 1000+ | 137.19 грн |
| C6D10065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 405.03 грн |
| 50+ | 203.96 грн |
| 100+ | 185.96 грн |
| C6D10065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 151.80 грн |
| C6D10065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 405.03 грн |
| 10+ | 259.89 грн |
| 100+ | 185.96 грн |
| C6D10065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| C6D10065Q-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1633 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 405.03 грн |
| 10+ | 259.89 грн |
| 100+ | 185.96 грн |
| 500+ | 144.91 грн |
| 1000+ | 137.19 грн |
| C6D10170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 40A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
Description: DIODE SIL CARB 1700V 40A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
на замовлення 622 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1373.51 грн |
| 30+ | 825.85 грн |
| 120+ | 717.04 грн |
| 510+ | 654.11 грн |
| C6D20065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 636.13 грн |
| 50+ | 488.98 грн |
| 100+ | 437.51 грн |
| C6D20065D |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 64A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC 650V 64A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 636.13 грн |
| 30+ | 488.98 грн |
| 120+ | 437.51 грн |
| C6D20065D1 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 688.39 грн |
| 30+ | 529.40 грн |
| 120+ | 473.66 грн |
| 510+ | 392.22 грн |
| C6D20065G |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 688.39 грн |
| 50+ | 529.39 грн |
| 100+ | 473.66 грн |
| 500+ | 392.22 грн |
| C6D20065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 659.81 грн |
| 10+ | 544.47 грн |
| 100+ | 453.72 грн |
| C6D20065G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 415.73 грн |
| C6D20065H |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
на замовлення 578 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 659.81 грн |
| 30+ | 507.09 грн |
| 120+ | 453.72 грн |
| 510+ | 375.70 грн |
| C6D25170H |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 83A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Description: DIODE SIL CARB 1700V 83A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
товару немає в наявності
В кошику
од. на суму грн.


















