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C3D10060G C3D10060G Wolfspeed, Inc. Wolfspeed_C3D10060G_data_sheet.pdf Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
1+392.09 грн
50+196.87 грн
100+179.38 грн
500+139.58 грн
В кошику  од. на суму  грн.
C3D10060G-TR C3D10060G-TR Wolfspeed, Inc. Wolfspeed_C3D10060G_data_sheet.pdf Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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C3D10060G-TR C3D10060G-TR Wolfspeed, Inc. Wolfspeed_C3D10060G_data_sheet.pdf Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 513 шт:
термін постачання 21-31 дні (днів)
1+415.55 грн
10+265.83 грн
100+189.78 грн
В кошику  од. на суму  грн.
C3D10065A C3D10065A Wolfspeed, Inc. Wolfspeed_C3D10065A_data_sheet.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
1+425.60 грн
50+214.28 грн
100+195.37 грн
500+152.24 грн
В кошику  од. на суму  грн.
C3D10065E C3D10065E Wolfspeed, Inc. Wolfspeed_C3D10065E_data_sheet.pdf Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 3664 шт:
термін постачання 21-31 дні (днів)
1+418.90 грн
75+199.78 грн
150+182.94 грн
525+149.21 грн
1050+139.50 грн
2025+131.73 грн
В кошику  од. на суму  грн.
C3D10065E-TR C3D10065E-TR Wolfspeed, Inc. Wolfspeed_C3D10065E_data_sheet.pdf Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 628 шт:
термін постачання 21-31 дні (днів)
1+418.90 грн
10+268.98 грн
100+192.43 грн
500+157.97 грн
В кошику  од. на суму  грн.
C3D10065E-TR C3D10065E-TR Wolfspeed, Inc. Wolfspeed_C3D10065E_data_sheet.pdf Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
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C3D10065I C3D10065I Wolfspeed, Inc. Wolfspeed_C3D10065I_data_sheet.pdf Description: DIODE SIL CARB 650V 19A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+443.19 грн
50+224.43 грн
100+204.89 грн
В кошику  од. на суму  грн.
C3D12065A C3D12065A Wolfspeed, Inc. Wolfspeed_C3D12065A_data_sheet.pdf Description: DIODE SIL CARB 650V 35A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 74 µA @ 650 V
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)
2+320.04 грн
50+177.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C3D16060D C3D16060D Wolfspeed, Inc. Wolfspeed_C3D16060D_data_sheet.pdf Description: DIODE ARRAY SIC 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
1+801.77 грн
30+427.75 грн
В кошику  од. на суму  грн.
C3D16065A C3D16065A Wolfspeed, Inc. Wolfspeed_C3D16065A_data_sheet.pdf Description: DIODE SIL CARB 650V 39A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+792.55 грн
50+609.01 грн
100+544.90 грн
В кошику  од. на суму  грн.
C3D16065D C3D16065D Wolfspeed, Inc. Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+792.55 грн
30+609.00 грн
120+544.90 грн
В кошику  од. на суму  грн.
C3D16065D1 C3D16065D1 Wolfspeed, Inc. Description: DIODE SIL CARBIDE 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
1+528.65 грн
30+406.02 грн
120+363.27 грн
В кошику  од. на суму  грн.
C3D20060D C3D20060D Wolfspeed, Inc. Wolfspeed_C3D20060D_data_sheet.pdf Description: DIODE ARR SIC 600V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
1+694.53 грн
30+390.82 грн
120+329.83 грн
510+276.10 грн
В кошику  од. на суму  грн.
C3D20065D C3D20065D Wolfspeed, Inc. Wolfspeed_C3D20065D_data_sheet.pdf Description: DIODE ARR SIC 650V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
1+721.34 грн
30+407.52 грн
120+344.45 грн
510+290.54 грн
В кошику  од. на суму  грн.
C3D25170H C3D25170H Wolfspeed, Inc. C3D25170H.pdf Description: DIODE SIL CARB 1.7KV 26.3A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
Current - Average Rectified (Io): 26.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товару немає в наявності
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C3D30065D C3D30065D Wolfspeed, Inc. Wolfspeed_C3D30065D_data_sheet.pdf Description: DIODE ARR SIC 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
1+956.76 грн
30+554.84 грн
120+474.47 грн
В кошику  од. на суму  грн.
C3M0015065D C3M0015065D Wolfspeed, Inc. Wolfspeed_C3M0015065D_data_sheet.pdf Description: SICFET N-CH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+3759.18 грн
30+2462.49 грн
120+2452.75 грн
В кошику  од. на суму  грн.
C3M0015065K C3M0015065K Wolfspeed, Inc. Wolfspeed_C3M0015065K_data_sheet.pdf Description: SICFET N-CH 650V 120A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 331 шт:
термін постачання 21-31 дні (днів)
1+3759.18 грн
30+2462.49 грн
120+2452.75 грн
В кошику  од. на суму  грн.
C3M0015065K-M Wolfspeed, Inc. Description: MVF 200MM QUALIFIED MATERIAL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
товару немає в наявності
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C3M0016120D C3M0016120D Wolfspeed, Inc. Wolfspeed_C3M0016120D_data_sheet.pdf Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 702 шт:
термін постачання 21-31 дні (днів)
1+3873.12 грн
30+2544.21 грн
В кошику  од. на суму  грн.
C3M0016120K C3M0016120K Wolfspeed, Inc. Wolfspeed_C3M0016120K_data_sheet.pdf Description: SICFET N-CH 1.2KV 115A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
1+3873.12 грн
30+2544.21 грн
В кошику  од. на суму  грн.
C3M0016120K1 C3M0016120K1 Wolfspeed, Inc. Wolfspeed_C3M0016120K1_data_sheet.pdf Description: MOSFET N-CH 1200V 125A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22.08mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
на замовлення 353 шт:
термін постачання 21-31 дні (днів)
1+3873.12 грн
30+2544.21 грн
В кошику  од. на суму  грн.
C3M0021120D C3M0021120D Wolfspeed, Inc. Wolfspeed_C3M0021120D_data_sheet.pdf Description: SICFET N-CH 1200V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
1+2048.41 грн
30+1272.59 грн
120+1150.59 грн
В кошику  од. на суму  грн.
C3M0021120K C3M0021120K Wolfspeed, Inc. Wolfspeed_C3M0021120K_data_sheet.pdf Description: SICFET N-CH 1200V 100A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 2725 шт:
термін постачання 21-31 дні (днів)
1+2107.05 грн
30+1554.47 грн
В кошику  од. на суму  грн.
C3M0021120K1 C3M0021120K1 Wolfspeed, Inc. Wolfspeed_C3M0021120K1_data_sheet.pdf Description: MOSFET N-CH 1200V 104A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+2048.41 грн
30+1272.59 грн
120+1150.59 грн
В кошику  од. на суму  грн.
C3M0025065D C3M0025065D Wolfspeed, Inc. Wolfspeed_C3M0025065D_data_sheet.pdf Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 408 шт:
термін постачання 21-31 дні (днів)
1+2092.81 грн
30+1433.57 грн
В кошику  од. на суму  грн.
C3M0025065J1 C3M0025065J1 Wolfspeed, Inc. Wolfspeed_C3M0025065J1_data_sheet.pdf Description: 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
1+1487.92 грн
50+851.96 грн
100+796.21 грн
В кошику  од. на суму  грн.
C3M0025065J1-TR C3M0025065J1-TR Wolfspeed, Inc. Wolfspeed_C3M0025065J1_data_sheet.pdf Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
1+1487.92 грн
10+1025.64 грн
100+941.58 грн
В кошику  од. на суму  грн.
C3M0025065J1-TR C3M0025065J1-TR Wolfspeed, Inc. Wolfspeed_C3M0025065J1_data_sheet.pdf Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0025065K C3M0025065K Wolfspeed, Inc. Wolfspeed_C3M0025065K_data_sheet.pdf Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 886 шт:
термін постачання 21-31 дні (днів)
1+1508.03 грн
30+911.75 грн
120+793.56 грн
510+731.57 грн
В кошику  од. на суму  грн.
C3M0025065L-TR C3M0025065L-TR Wolfspeed, Inc. Wolfspeed_C3M0025065L_data_sheet.pdf Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0025065L-TR C3M0025065L-TR Wolfspeed, Inc. Wolfspeed_C3M0025065L_data_sheet.pdf Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
1+1508.03 грн
10+1039.35 грн
100+954.17 грн
В кошику  од. на суму  грн.
C3M0025075K1 C3M0025075K1 Wolfspeed, Inc. Wolfspeed_C3M0025075K1_data_sheet.pdf Description: SICFET N-CH 750V 80A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+1670.56 грн
10+1287.35 грн
30+1193.31 грн
В кошику  од. на суму  грн.
C3M0030090K C3M0030090K Wolfspeed, Inc. Wolfspeed_C3M0030090K_data_sheet.pdf Description: SICFET N-CH 900V 73A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 11mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V
на замовлення 2404 шт:
термін постачання 21-31 дні (днів)
1+3773.42 грн
30+2554.24 грн
В кошику  од. на суму  грн.
C3M0032120D C3M0032120D Wolfspeed, Inc. Wolfspeed_C3M0032120D_data_sheet.pdf Description: SICFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
1+1606.89 грн
30+977.34 грн
В кошику  од. на суму  грн.
C3M0032120J1 C3M0032120J1 Wolfspeed, Inc. Wolfspeed_C3M0032120J1_data_sheet.pdf Description: 1200V 32MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
1+1606.89 грн
50+926.25 грн
100+866.62 грн
В кошику  од. на суму  грн.
C3M0032120K C3M0032120K Wolfspeed, Inc. Wolfspeed_C3M0032120K_data_sheet.pdf Description: SICFET N-CH 1200V 63A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+2732.88 грн
30+2137.68 грн
120+2017.61 грн
В кошику  од. на суму  грн.
C3M0040120D C3M0040120D Wolfspeed, Inc. Wolfspeed_C3M0040120D_data_sheet.pdf Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 512 шт:
термін постачання 21-31 дні (днів)
1+1234.91 грн
30+734.05 грн
120+634.30 грн
510+566.46 грн
В кошику  од. на суму  грн.
C3M0040120D-MVF Wolfspeed, Inc. Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
C3M0040120J1 C3M0040120J1 Wolfspeed, Inc. Wolfspeed_C3M0040120J1_data_sheet.pdf Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
1+2202.56 грн
50+1259.54 грн
100+1236.44 грн
В кошику  од. на суму  грн.
C3M0040120J1-TR C3M0040120J1-TR Wolfspeed, Inc. Wolfspeed_C3M0040120J1_data_sheet.pdf Description: 1200V 40 M SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+1226.50 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0040120J1-TR C3M0040120J1-TR Wolfspeed, Inc. Wolfspeed_C3M0040120J1_data_sheet.pdf Description: 1200V 40 M SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)
1+2181.62 грн
10+1534.31 грн
100+1299.18 грн
В кошику  од. на суму  грн.
C3M0040120K C3M0040120K Wolfspeed, Inc. Wolfspeed_C3M0040120K_data_sheet.pdf Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
1+2164.86 грн
30+1349.10 грн
120+1289.26 грн
В кошику  од. на суму  грн.
C3M0045065D C3M0045065D Wolfspeed, Inc. Wolfspeed_C3M0045065D_data_sheet.pdf Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
на замовлення 454 шт:
термін постачання 21-31 дні (днів)
1+1612.75 грн
30+969.70 грн
120+892.23 грн
В кошику  од. на суму  грн.
C3M0045065J1 C3M0045065J1 Wolfspeed, Inc. Wolfspeed_C3M0045065J1_data_sheet.pdf Description: 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
1+1007.03 грн
50+553.59 грн
100+513.55 грн
500+434.86 грн
В кошику  од. на суму  грн.
C3M0045065J1-TR Wolfspeed, Inc. Wolfspeed_C3M0045065J1_data_sheet.pdf Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0045065J1-TR Wolfspeed, Inc. Wolfspeed_C3M0045065J1_data_sheet.pdf Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
1+1631.19 грн
10+1125.92 грн
100+892.23 грн
В кошику  од. на суму  грн.
C3M0045065K C3M0045065K Wolfspeed, Inc. Wolfspeed_C3M0045065K_data_sheet.pdf Description: GEN 3 650V 49A SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
товару немає в наявності
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C3M0045065L-M-TR C3M0045065L-M-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
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C3M0045065L-M-TR C3M0045065L-M-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
1+1461.11 грн
10+1002.08 грн
100+774.94 грн
В кошику  од. на суму  грн.
C3M0045065L-TR C3M0045065L-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 2496 шт:
термін постачання 21-31 дні (днів)
1+1000.33 грн
10+673.57 грн
100+563.29 грн
В кошику  од. на суму  грн.
C3M0045065L-TR C3M0045065L-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+477.91 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
C3M0045075K1 C3M0045075K1 Wolfspeed, Inc. Wolfspeed_C3M0045075K1_data_sheet.pdf Description: SICFET N-CH 750V 42A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
1+1007.03 грн
30+587.84 грн
В кошику  од. на суму  грн.
C3M0060065D C3M0060065D Wolfspeed, Inc. Wolfspeed_C3M0060065D_data_sheet.pdf Description: SICFET N-CH 650V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
1+1073.21 грн
30+753.98 грн
В кошику  од. на суму  грн.
C3M0060065J C3M0060065J Wolfspeed, Inc. Wolfspeed_C3M0060065J_data_sheet.pdf Description: SICFET N-CH 650V 36A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 2758 шт:
термін постачання 21-31 дні (днів)
1+852.04 грн
50+460.73 грн
100+426.08 грн
500+349.85 грн
В кошику  од. на суму  грн.
C3M0060065J-TR Wolfspeed, Inc. Wolfspeed_C3M0060065J_data_sheet.pdf Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
товару немає в наявності
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C3M0060065J-TR Wolfspeed, Inc. Wolfspeed_C3M0060065J_data_sheet.pdf Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 377 шт:
термін постачання 21-31 дні (днів)
1+1430.95 грн
10+980.30 грн
100+756.12 грн
В кошику  од. на суму  грн.
C3M0060065K C3M0060065K Wolfspeed, Inc. Wolfspeed_C3M0060065K_data_sheet.pdf Description: SICFET N-CH 650V 37A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+841.15 грн
30+483.92 грн
120+412.40 грн
В кошику  од. на суму  грн.
C3M0060065L-TR C3M0060065L-TR Wolfspeed, Inc. C3M0060065L.pdf Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
товару немає в наявності
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C3D10060G Wolfspeed_C3D10060G_data_sheet.pdf
C3D10060G
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.09 грн
50+196.87 грн
100+179.38 грн
500+139.58 грн
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C3D10060G-TR Wolfspeed_C3D10060G_data_sheet.pdf
C3D10060G-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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C3D10060G-TR Wolfspeed_C3D10060G_data_sheet.pdf
C3D10060G-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 513 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+415.55 грн
10+265.83 грн
100+189.78 грн
В кошику  од. на суму  грн.
C3D10065A Wolfspeed_C3D10065A_data_sheet.pdf
C3D10065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+425.60 грн
50+214.28 грн
100+195.37 грн
500+152.24 грн
В кошику  од. на суму  грн.
C3D10065E Wolfspeed_C3D10065E_data_sheet.pdf
C3D10065E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 3664 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+418.90 грн
75+199.78 грн
150+182.94 грн
525+149.21 грн
1050+139.50 грн
2025+131.73 грн
В кошику  од. на суму  грн.
C3D10065E-TR Wolfspeed_C3D10065E_data_sheet.pdf
C3D10065E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+418.90 грн
10+268.98 грн
100+192.43 грн
500+157.97 грн
В кошику  од. на суму  грн.
C3D10065E-TR Wolfspeed_C3D10065E_data_sheet.pdf
C3D10065E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
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C3D10065I Wolfspeed_C3D10065I_data_sheet.pdf
C3D10065I
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 19A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+443.19 грн
50+224.43 грн
100+204.89 грн
В кошику  од. на суму  грн.
C3D12065A Wolfspeed_C3D12065A_data_sheet.pdf
C3D12065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 35A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 74 µA @ 650 V
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+320.04 грн
50+177.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C3D16060D Wolfspeed_C3D16060D_data_sheet.pdf
C3D16060D
Виробник: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+801.77 грн
30+427.75 грн
В кошику  од. на суму  грн.
C3D16065A Wolfspeed_C3D16065A_data_sheet.pdf
C3D16065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 39A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+792.55 грн
50+609.01 грн
100+544.90 грн
В кошику  од. на суму  грн.
C3D16065D
C3D16065D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+792.55 грн
30+609.00 грн
120+544.90 грн
В кошику  од. на суму  грн.
C3D16065D1
C3D16065D1
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+528.65 грн
30+406.02 грн
120+363.27 грн
В кошику  од. на суму  грн.
C3D20060D Wolfspeed_C3D20060D_data_sheet.pdf
C3D20060D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 600V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+694.53 грн
30+390.82 грн
120+329.83 грн
510+276.10 грн
В кошику  од. на суму  грн.
C3D20065D Wolfspeed_C3D20065D_data_sheet.pdf
C3D20065D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+721.34 грн
30+407.52 грн
120+344.45 грн
510+290.54 грн
В кошику  од. на суму  грн.
C3D25170H C3D25170H.pdf
C3D25170H
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.7KV 26.3A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
Current - Average Rectified (Io): 26.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товару немає в наявності
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C3D30065D Wolfspeed_C3D30065D_data_sheet.pdf
C3D30065D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+956.76 грн
30+554.84 грн
120+474.47 грн
В кошику  од. на суму  грн.
C3M0015065D Wolfspeed_C3M0015065D_data_sheet.pdf
C3M0015065D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3759.18 грн
30+2462.49 грн
120+2452.75 грн
В кошику  од. на суму  грн.
C3M0015065K Wolfspeed_C3M0015065K_data_sheet.pdf
C3M0015065K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 120A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3759.18 грн
30+2462.49 грн
120+2452.75 грн
В кошику  од. на суму  грн.
C3M0015065K-M
Виробник: Wolfspeed, Inc.
Description: MVF 200MM QUALIFIED MATERIAL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
товару немає в наявності
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C3M0016120D Wolfspeed_C3M0016120D_data_sheet.pdf
C3M0016120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 702 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3873.12 грн
30+2544.21 грн
В кошику  од. на суму  грн.
C3M0016120K Wolfspeed_C3M0016120K_data_sheet.pdf
C3M0016120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1.2KV 115A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3873.12 грн
30+2544.21 грн
В кошику  од. на суму  грн.
C3M0016120K1 Wolfspeed_C3M0016120K1_data_sheet.pdf
C3M0016120K1
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 125A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22.08mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
на замовлення 353 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3873.12 грн
30+2544.21 грн
В кошику  од. на суму  грн.
C3M0021120D Wolfspeed_C3M0021120D_data_sheet.pdf
C3M0021120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2048.41 грн
30+1272.59 грн
120+1150.59 грн
В кошику  од. на суму  грн.
C3M0021120K Wolfspeed_C3M0021120K_data_sheet.pdf
C3M0021120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 100A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 2725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2107.05 грн
30+1554.47 грн
В кошику  од. на суму  грн.
C3M0021120K1 Wolfspeed_C3M0021120K1_data_sheet.pdf
C3M0021120K1
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 104A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2048.41 грн
30+1272.59 грн
120+1150.59 грн
В кошику  од. на суму  грн.
C3M0025065D Wolfspeed_C3M0025065D_data_sheet.pdf
C3M0025065D
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 408 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2092.81 грн
30+1433.57 грн
В кошику  од. на суму  грн.
C3M0025065J1 Wolfspeed_C3M0025065J1_data_sheet.pdf
C3M0025065J1
Виробник: Wolfspeed, Inc.
Description: 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1487.92 грн
50+851.96 грн
100+796.21 грн
В кошику  од. на суму  грн.
C3M0025065J1-TR Wolfspeed_C3M0025065J1_data_sheet.pdf
C3M0025065J1-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1487.92 грн
10+1025.64 грн
100+941.58 грн
В кошику  од. на суму  грн.
C3M0025065J1-TR Wolfspeed_C3M0025065J1_data_sheet.pdf
C3M0025065J1-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0025065K Wolfspeed_C3M0025065K_data_sheet.pdf
C3M0025065K
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 886 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1508.03 грн
30+911.75 грн
120+793.56 грн
510+731.57 грн
В кошику  од. на суму  грн.
C3M0025065L-TR Wolfspeed_C3M0025065L_data_sheet.pdf
C3M0025065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0025065L-TR Wolfspeed_C3M0025065L_data_sheet.pdf
C3M0025065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1508.03 грн
10+1039.35 грн
100+954.17 грн
В кошику  од. на суму  грн.
C3M0025075K1 Wolfspeed_C3M0025075K1_data_sheet.pdf
C3M0025075K1
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 80A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1670.56 грн
10+1287.35 грн
30+1193.31 грн
В кошику  од. на суму  грн.
C3M0030090K Wolfspeed_C3M0030090K_data_sheet.pdf
C3M0030090K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 73A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 11mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V
на замовлення 2404 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3773.42 грн
30+2554.24 грн
В кошику  од. на суму  грн.
C3M0032120D Wolfspeed_C3M0032120D_data_sheet.pdf
C3M0032120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1606.89 грн
30+977.34 грн
В кошику  од. на суму  грн.
C3M0032120J1 Wolfspeed_C3M0032120J1_data_sheet.pdf
C3M0032120J1
Виробник: Wolfspeed, Inc.
Description: 1200V 32MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1606.89 грн
50+926.25 грн
100+866.62 грн
В кошику  од. на суму  грн.
C3M0032120K Wolfspeed_C3M0032120K_data_sheet.pdf
C3M0032120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 63A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2732.88 грн
30+2137.68 грн
120+2017.61 грн
В кошику  од. на суму  грн.
C3M0040120D Wolfspeed_C3M0040120D_data_sheet.pdf
C3M0040120D
Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1234.91 грн
30+734.05 грн
120+634.30 грн
510+566.46 грн
В кошику  од. на суму  грн.
C3M0040120D-MVF
Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
C3M0040120J1 Wolfspeed_C3M0040120J1_data_sheet.pdf
C3M0040120J1
Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2202.56 грн
50+1259.54 грн
100+1236.44 грн
В кошику  од. на суму  грн.
C3M0040120J1-TR Wolfspeed_C3M0040120J1_data_sheet.pdf
C3M0040120J1-TR
Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+1226.50 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0040120J1-TR Wolfspeed_C3M0040120J1_data_sheet.pdf
C3M0040120J1-TR
Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2181.62 грн
10+1534.31 грн
100+1299.18 грн
В кошику  од. на суму  грн.
C3M0040120K Wolfspeed_C3M0040120K_data_sheet.pdf
C3M0040120K
Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2164.86 грн
30+1349.10 грн
120+1289.26 грн
В кошику  од. на суму  грн.
C3M0045065D Wolfspeed_C3M0045065D_data_sheet.pdf
C3M0045065D
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
на замовлення 454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1612.75 грн
30+969.70 грн
120+892.23 грн
В кошику  од. на суму  грн.
C3M0045065J1 Wolfspeed_C3M0045065J1_data_sheet.pdf
C3M0045065J1
Виробник: Wolfspeed, Inc.
Description: 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1007.03 грн
50+553.59 грн
100+513.55 грн
500+434.86 грн
В кошику  од. на суму  грн.
C3M0045065J1-TR Wolfspeed_C3M0045065J1_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
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C3M0045065J1-TR Wolfspeed_C3M0045065J1_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1631.19 грн
10+1125.92 грн
100+892.23 грн
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C3M0045065K Wolfspeed_C3M0045065K_data_sheet.pdf
C3M0045065K
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 49A SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
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C3M0045065L-M-TR C3M0045065L.pdf
C3M0045065L-M-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
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C3M0045065L-M-TR C3M0045065L.pdf
C3M0045065L-M-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1461.11 грн
10+1002.08 грн
100+774.94 грн
В кошику  од. на суму  грн.
C3M0045065L-TR C3M0045065L.pdf
C3M0045065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 2496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1000.33 грн
10+673.57 грн
100+563.29 грн
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C3M0045065L-TR C3M0045065L.pdf
C3M0045065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+477.91 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
C3M0045075K1 Wolfspeed_C3M0045075K1_data_sheet.pdf
C3M0045075K1
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 42A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1007.03 грн
30+587.84 грн
В кошику  од. на суму  грн.
C3M0060065D Wolfspeed_C3M0060065D_data_sheet.pdf
C3M0060065D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1073.21 грн
30+753.98 грн
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C3M0060065J Wolfspeed_C3M0060065J_data_sheet.pdf
C3M0060065J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 36A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 2758 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+852.04 грн
50+460.73 грн
100+426.08 грн
500+349.85 грн
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C3M0060065J-TR Wolfspeed_C3M0060065J_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
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C3M0060065J-TR Wolfspeed_C3M0060065J_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 377 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1430.95 грн
10+980.30 грн
100+756.12 грн
В кошику  од. на суму  грн.
C3M0060065K Wolfspeed_C3M0060065K_data_sheet.pdf
C3M0060065K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 37A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+841.15 грн
30+483.92 грн
120+412.40 грн
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C3M0060065L-TR C3M0060065L.pdf
C3M0060065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
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