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C3D10060G C3D10060G Wolfspeed, Inc. Wolfspeed_C3D10060G_data_sheet.pdf Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1759 шт:
термін постачання 21-31 дні (днів)
1+362.09 грн
50+178.19 грн
100+165.19 грн
500+128.54 грн
1000+120.93 грн
В кошику  од. на суму  грн.
C3D10060G-TR C3D10060G-TR Wolfspeed, Inc. Wolfspeed_C3D10060G_data_sheet.pdf Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3D10060G-TR C3D10060G-TR Wolfspeed, Inc. Wolfspeed_C3D10060G_data_sheet.pdf Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 513 шт:
термін постачання 21-31 дні (днів)
1+394.72 грн
10+252.51 грн
100+180.27 грн
В кошику  од. на суму  грн.
C3D10065A C3D10065A Wolfspeed, Inc. Wolfspeed_C3D10065A_data_sheet.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
1+404.27 грн
50+203.54 грн
100+185.58 грн
500+144.61 грн
В кошику  од. на суму  грн.
C3D10065E C3D10065E Wolfspeed, Inc. Wolfspeed_C3D10065E_data_sheet.pdf Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 6445 шт:
термін постачання 21-31 дні (днів)
1+373.23 грн
75+173.57 грн
150+161.07 грн
525+132.91 грн
1050+126.46 грн
В кошику  од. на суму  грн.
C3D10065E-TR C3D10065E-TR Wolfspeed, Inc. C3D10065E.pdf Description: ZRECTM 10A, 650V SIC SCHOTTKY DI
товару немає в наявності
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C3D10065I C3D10065I Wolfspeed, Inc. Wolfspeed_C3D10065I_data_sheet.pdf Description: DIODE SIL CARB 650V 19A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+420.98 грн
50+213.18 грн
100+194.63 грн
В кошику  од. на суму  грн.
C3D12065A C3D12065A Wolfspeed, Inc. Wolfspeed_C3D12065A_data_sheet.pdf Description: DIODE SIL CARB 650V 35A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 74 µA @ 650 V
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)
2+304.00 грн
50+169.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C3D16060D C3D16060D Wolfspeed, Inc. Wolfspeed_C3D16060D_data_sheet.pdf Description: DIODE ARRAY SIC 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
1+761.59 грн
30+406.31 грн
В кошику  од. на суму  грн.
C3D16065A C3D16065A Wolfspeed, Inc. Wolfspeed_C3D16065A_data_sheet.pdf Description: DIODE SIL CARB 650V 39A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+752.84 грн
50+578.49 грн
100+517.59 грн
В кошику  од. на суму  грн.
C3D16065D C3D16065D Wolfspeed, Inc. Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+752.84 грн
30+578.48 грн
120+517.60 грн
В кошику  од. на суму  грн.
C3D16065D1 C3D16065D1 Wolfspeed, Inc. Description: DIODE SIL CARBIDE 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
1+502.16 грн
30+385.67 грн
120+345.06 грн
В кошику  од. на суму  грн.
C3D20060D C3D20060D Wolfspeed, Inc. Wolfspeed_C3D20060D_data_sheet.pdf Description: DIODE ARR SIC 600V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
1+659.73 грн
30+371.24 грн
120+313.30 грн
510+262.27 грн
В кошику  од. на суму  грн.
C3D20065D C3D20065D Wolfspeed, Inc. Wolfspeed_C3D20065D_data_sheet.pdf Description: DIODE ARR SIC 650V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
1+685.19 грн
30+387.10 грн
120+327.19 грн
510+275.98 грн
В кошику  од. на суму  грн.
C3D25170H C3D25170H Wolfspeed, Inc. C3D25170H.pdf Description: DIODE SIL CARB 1.7KV 26.3A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
Current - Average Rectified (Io): 26.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товару немає в наявності
В кошику  од. на суму  грн.
C3D30065D C3D30065D Wolfspeed, Inc. Wolfspeed_C3D30065D_data_sheet.pdf Description: DIODE ARR SIC 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
1+908.81 грн
30+527.03 грн
120+450.69 грн
В кошику  од. на суму  грн.
C3M0015065D C3M0015065D Wolfspeed, Inc. Wolfspeed_C3M0015065D_data_sheet.pdf Description: SICFET N-CH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 511 шт:
термін постачання 21-31 дні (днів)
1+3777.71 грн
30+2587.99 грн
В кошику  од. на суму  грн.
C3M0015065K C3M0015065K Wolfspeed, Inc. Wolfspeed_C3M0015065K_data_sheet.pdf Description: SICFET N-CH 650V 120A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 719 шт:
термін постачання 21-31 дні (днів)
1+3021.69 грн
30+2587.99 грн
В кошику  од. на суму  грн.
C3M0015065K-M Wolfspeed, Inc. Description: MVF 200MM QUALIFIED MATERIAL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0016120D C3M0016120D Wolfspeed, Inc. Wolfspeed_C3M0016120D_data_sheet.pdf Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
1+5565.10 грн
30+5145.10 грн
В кошику  од. на суму  грн.
C3M0016120K C3M0016120K Wolfspeed, Inc. Wolfspeed_C3M0016120K_data_sheet.pdf Description: SICFET N-CH 1.2KV 115A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 426 шт:
термін постачання 21-31 дні (днів)
1+6600.45 грн
30+5145.10 грн
В кошику  од. на суму  грн.
C3M0021120D C3M0021120D Wolfspeed, Inc. Wolfspeed_C3M0021120D_data_sheet.pdf Description: SICFET N-CH 1200V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
1+2906.30 грн
30+1910.96 грн
В кошику  од. на суму  грн.
C3M0021120K C3M0021120K Wolfspeed, Inc. Wolfspeed_C3M0021120K_data_sheet.pdf Description: SICFET N-CH 1200V 100A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 3080 шт:
термін постачання 21-31 дні (днів)
1+2906.30 грн
30+1910.96 грн
В кошику  од. на суму  грн.
C3M0025065D C3M0025065D Wolfspeed, Inc. Wolfspeed_C3M0025065D_data_sheet.pdf Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 408 шт:
термін постачання 21-31 дні (днів)
1+1987.93 грн
30+1361.73 грн
В кошику  од. на суму  грн.
C3M0025065J1 C3M0025065J1 Wolfspeed, Inc. Wolfspeed_C3M0025065J1_data_sheet.pdf Description: 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
1+2382.65 грн
50+1459.41 грн
В кошику  од. на суму  грн.
C3M0025065K C3M0025065K Wolfspeed, Inc. Wolfspeed_C3M0025065K_data_sheet.pdf Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1981.57 грн
30+1356.29 грн
В кошику  од. на суму  грн.
C3M0025065L-TR C3M0025065L-TR Wolfspeed, Inc. Wolfspeed_C3M0025065L_data_sheet.pdf Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0025065L-TR C3M0025065L-TR Wolfspeed, Inc. Wolfspeed_C3M0025065L_data_sheet.pdf Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
1+2396.18 грн
10+1687.55 грн
25+1526.08 грн
100+1413.08 грн
В кошику  од. на суму  грн.
C3M0025075K1 C3M0025075K1 Wolfspeed, Inc. Wolfspeed_C3M0025075K1_data_sheet.pdf Description: SICFET N-CH 750V 80A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+1586.84 грн
10+1222.84 грн
30+1133.51 грн
В кошику  од. на суму  грн.
C3M0030090K C3M0030090K Wolfspeed, Inc. Wolfspeed_C3M0030090K_data_sheet.pdf Description: SICFET N-CH 900V 73A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 11mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V
на замовлення 2404 шт:
термін постачання 21-31 дні (днів)
1+3584.33 грн
30+2426.24 грн
В кошику  од. на суму  грн.
C3M0032120D C3M0032120D Wolfspeed, Inc. Wolfspeed_C3M0032120D_data_sheet.pdf Description: SICFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
1+2159.83 грн
30+1706.65 грн
В кошику  од. на суму  грн.
C3M0032120J1 Wolfspeed, Inc. Wolfspeed_C3M0032120J1_data_sheet.pdf Description: 1200V 32MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+2595.93 грн
50+1640.82 грн
В кошику  од. на суму  грн.
C3M0032120K C3M0032120K Wolfspeed, Inc. Wolfspeed_C3M0032120K_data_sheet.pdf Description: SICFET N-CH 1200V 63A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+2595.93 грн
30+2030.56 грн
120+1916.50 грн
В кошику  од. на суму  грн.
C3M0040120D C3M0040120D Wolfspeed, Inc. Wolfspeed_C3M0040120D_data_sheet.pdf Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
1+2056.37 грн
30+1281.49 грн
120+1224.65 грн
В кошику  од. на суму  грн.
C3M0040120D-MVF Wolfspeed, Inc. Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
C3M0040120J1 Wolfspeed, Inc. Wolfspeed_C3M0040120J1_data_sheet.pdf Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+2056.37 грн
50+1224.65 грн
В кошику  од. на суму  грн.
C3M0040120J1-TR C3M0040120J1-TR Wolfspeed, Inc. Wolfspeed_C3M0040120J1_data_sheet.pdf Description: 1200V 40 M SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+1165.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0040120J1-TR C3M0040120J1-TR Wolfspeed, Inc. Wolfspeed_C3M0040120J1_data_sheet.pdf Description: 1200V 40 M SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)
1+2072.29 грн
10+1457.42 грн
100+1234.08 грн
В кошику  од. на суму  грн.
C3M0040120K C3M0040120K Wolfspeed, Inc. Wolfspeed_C3M0040120K_data_sheet.pdf Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
1+2056.37 грн
30+1281.49 грн
120+1224.65 грн
В кошику  од. на суму  грн.
C3M0045065D C3M0045065D Wolfspeed, Inc. Wolfspeed_C3M0045065D_data_sheet.pdf Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
на замовлення 454 шт:
термін постачання 21-31 дні (днів)
1+1531.93 грн
30+921.11 грн
120+847.52 грн
В кошику  од. на суму  грн.
C3M0045065J1 Wolfspeed, Inc. Wolfspeed_C3M0045065J1_data_sheet.pdf Description: 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 802 шт:
термін постачання 21-31 дні (днів)
1+1159.49 грн
50+860.56 грн
100+819.96 грн
В кошику  од. на суму  грн.
C3M0045065J1-TR Wolfspeed, Inc. Wolfspeed_C3M0045065J1_data_sheet.pdf Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0045065J1-TR Wolfspeed, Inc. Wolfspeed_C3M0045065J1_data_sheet.pdf Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
1+1549.44 грн
10+1069.50 грн
100+847.52 грн
В кошику  од. на суму  грн.
C3M0045065K C3M0045065K Wolfspeed, Inc. Wolfspeed_C3M0045065K_data_sheet.pdf Description: GEN 3 650V 49A SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0045065L-M-TR C3M0045065L-M-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0045065L-M-TR C3M0045065L-M-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
1+1387.89 грн
10+951.86 грн
100+736.10 грн
В кошику  од. на суму  грн.
C3M0045065L-TR C3M0045065L-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0045065L-TR C3M0045065L-TR Wolfspeed, Inc. C3M0045065L.pdf Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
1+1385.50 грн
10+950.26 грн
100+734.87 грн
В кошику  од. на суму  грн.
C3M0045075K1 C3M0045075K1 Wolfspeed, Inc. Wolfspeed_C3M0045075K1_data_sheet.pdf Description: SICFET N-CH 750V 42A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
1+870.62 грн
10+770.32 грн
30+738.39 грн
120+610.54 грн
В кошику  од. на суму  грн.
C3M0060065D C3M0060065D Wolfspeed, Inc. Wolfspeed_C3M0060065D_data_sheet.pdf Description: SICFET N-CH 650V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
1+1019.43 грн
30+716.19 грн
В кошику  од. на суму  грн.
C3M0060065J Wolfspeed, Inc. Wolfspeed_C3M0060065J_data_sheet.pdf Description: SICFET N-CH 650V 36A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 3137 шт:
термін постачання 21-31 дні (днів)
1+1048.08 грн
50+690.07 грн
В кошику  од. на суму  грн.
C3M0060065J-TR Wolfspeed, Inc. Wolfspeed_C3M0060065J_data_sheet.pdf Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0060065J-TR Wolfspeed, Inc. Wolfspeed_C3M0060065J_data_sheet.pdf Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 377 шт:
термін постачання 21-31 дні (днів)
1+1359.24 грн
10+931.17 грн
100+718.23 грн
В кошику  од. на суму  грн.
C3M0060065K C3M0060065K Wolfspeed, Inc. Wolfspeed_C3M0060065K_data_sheet.pdf Description: SICFET N-CH 650V 37A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
1+1322.64 грн
30+791.98 грн
120+716.19 грн
В кошику  од. на суму  грн.
C3M0060065L-TR C3M0060065L-TR Wolfspeed, Inc. C3M0060065L.pdf Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0060065L-TR C3M0060065L-TR Wolfspeed, Inc. C3M0060065L.pdf Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)
1+1181.78 грн
10+802.81 грн
100+613.90 грн
500+561.10 грн
В кошику  од. на суму  грн.
C3M0060075K1 C3M0060075K1 Wolfspeed, Inc. Wolfspeed_C3M0060075K1_data_sheet.pdf Description: SICFET N-CH 750V 35A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
на замовлення 379 шт:
термін постачання 21-31 дні (днів)
1+891.31 грн
10+588.32 грн
30+505.88 грн
120+403.58 грн
270+388.98 грн
В кошику  од. на суму  грн.
C3M0065090D C3M0065090D Wolfspeed, Inc. Wolfspeed_C3M0065090D_data_sheet.pdf Description: SICFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2454 шт:
термін постачання 21-31 дні (днів)
1+1407.79 грн
30+852.24 грн
120+767.10 грн
В кошику  од. на суму  грн.
C3M0065090J C3M0065090J Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2664 шт:
термін постачання 21-31 дні (днів)
1+1216.00 грн
50+783.26 грн
В кошику  од. на суму  грн.
C3M0065090J-TR C3M0065090J-TR Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+813.37 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3D10060G Wolfspeed_C3D10060G_data_sheet.pdf
C3D10060G
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1759 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+362.09 грн
50+178.19 грн
100+165.19 грн
500+128.54 грн
1000+120.93 грн
В кошику  од. на суму  грн.
C3D10060G-TR Wolfspeed_C3D10060G_data_sheet.pdf
C3D10060G-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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C3D10060G-TR Wolfspeed_C3D10060G_data_sheet.pdf
C3D10060G-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 513 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+394.72 грн
10+252.51 грн
100+180.27 грн
В кошику  од. на суму  грн.
C3D10065A Wolfspeed_C3D10065A_data_sheet.pdf
C3D10065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+404.27 грн
50+203.54 грн
100+185.58 грн
500+144.61 грн
В кошику  од. на суму  грн.
C3D10065E Wolfspeed_C3D10065E_data_sheet.pdf
C3D10065E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 6445 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+373.23 грн
75+173.57 грн
150+161.07 грн
525+132.91 грн
1050+126.46 грн
В кошику  од. на суму  грн.
C3D10065E-TR C3D10065E.pdf
C3D10065E-TR
Виробник: Wolfspeed, Inc.
Description: ZRECTM 10A, 650V SIC SCHOTTKY DI
товару немає в наявності
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C3D10065I Wolfspeed_C3D10065I_data_sheet.pdf
C3D10065I
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 19A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+420.98 грн
50+213.18 грн
100+194.63 грн
В кошику  од. на суму  грн.
C3D12065A Wolfspeed_C3D12065A_data_sheet.pdf
C3D12065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 35A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 74 µA @ 650 V
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.00 грн
50+169.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C3D16060D Wolfspeed_C3D16060D_data_sheet.pdf
C3D16060D
Виробник: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+761.59 грн
30+406.31 грн
В кошику  од. на суму  грн.
C3D16065A Wolfspeed_C3D16065A_data_sheet.pdf
C3D16065A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 39A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+752.84 грн
50+578.49 грн
100+517.59 грн
В кошику  од. на суму  грн.
C3D16065D
C3D16065D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+752.84 грн
30+578.48 грн
120+517.60 грн
В кошику  од. на суму  грн.
C3D16065D1
C3D16065D1
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+502.16 грн
30+385.67 грн
120+345.06 грн
В кошику  од. на суму  грн.
C3D20060D Wolfspeed_C3D20060D_data_sheet.pdf
C3D20060D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 600V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+659.73 грн
30+371.24 грн
120+313.30 грн
510+262.27 грн
В кошику  од. на суму  грн.
C3D20065D Wolfspeed_C3D20065D_data_sheet.pdf
C3D20065D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+685.19 грн
30+387.10 грн
120+327.19 грн
510+275.98 грн
В кошику  од. на суму  грн.
C3D25170H C3D25170H.pdf
C3D25170H
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.7KV 26.3A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
Current - Average Rectified (Io): 26.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товару немає в наявності
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C3D30065D Wolfspeed_C3D30065D_data_sheet.pdf
C3D30065D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+908.81 грн
30+527.03 грн
120+450.69 грн
В кошику  од. на суму  грн.
C3M0015065D Wolfspeed_C3M0015065D_data_sheet.pdf
C3M0015065D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 511 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3777.71 грн
30+2587.99 грн
В кошику  од. на суму  грн.
C3M0015065K Wolfspeed_C3M0015065K_data_sheet.pdf
C3M0015065K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 120A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 719 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3021.69 грн
30+2587.99 грн
В кошику  од. на суму  грн.
C3M0015065K-M
Виробник: Wolfspeed, Inc.
Description: MVF 200MM QUALIFIED MATERIAL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
товару немає в наявності
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C3M0016120D Wolfspeed_C3M0016120D_data_sheet.pdf
C3M0016120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5565.10 грн
30+5145.10 грн
В кошику  од. на суму  грн.
C3M0016120K Wolfspeed_C3M0016120K_data_sheet.pdf
C3M0016120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1.2KV 115A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 426 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6600.45 грн
30+5145.10 грн
В кошику  од. на суму  грн.
C3M0021120D Wolfspeed_C3M0021120D_data_sheet.pdf
C3M0021120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2906.30 грн
30+1910.96 грн
В кошику  од. на суму  грн.
C3M0021120K Wolfspeed_C3M0021120K_data_sheet.pdf
C3M0021120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 100A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 3080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2906.30 грн
30+1910.96 грн
В кошику  од. на суму  грн.
C3M0025065D Wolfspeed_C3M0025065D_data_sheet.pdf
C3M0025065D
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 408 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1987.93 грн
30+1361.73 грн
В кошику  од. на суму  грн.
C3M0025065J1 Wolfspeed_C3M0025065J1_data_sheet.pdf
C3M0025065J1
Виробник: Wolfspeed, Inc.
Description: 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2382.65 грн
50+1459.41 грн
В кошику  од. на суму  грн.
C3M0025065K Wolfspeed_C3M0025065K_data_sheet.pdf
C3M0025065K
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1981.57 грн
30+1356.29 грн
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C3M0025065L-TR Wolfspeed_C3M0025065L_data_sheet.pdf
C3M0025065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
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C3M0025065L-TR Wolfspeed_C3M0025065L_data_sheet.pdf
C3M0025065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2396.18 грн
10+1687.55 грн
25+1526.08 грн
100+1413.08 грн
В кошику  од. на суму  грн.
C3M0025075K1 Wolfspeed_C3M0025075K1_data_sheet.pdf
C3M0025075K1
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 80A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1586.84 грн
10+1222.84 грн
30+1133.51 грн
В кошику  од. на суму  грн.
C3M0030090K Wolfspeed_C3M0030090K_data_sheet.pdf
C3M0030090K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 73A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 11mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V
на замовлення 2404 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3584.33 грн
30+2426.24 грн
В кошику  од. на суму  грн.
C3M0032120D Wolfspeed_C3M0032120D_data_sheet.pdf
C3M0032120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2159.83 грн
30+1706.65 грн
В кошику  од. на суму  грн.
C3M0032120J1 Wolfspeed_C3M0032120J1_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: 1200V 32MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2595.93 грн
50+1640.82 грн
В кошику  од. на суму  грн.
C3M0032120K Wolfspeed_C3M0032120K_data_sheet.pdf
C3M0032120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 63A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2595.93 грн
30+2030.56 грн
120+1916.50 грн
В кошику  од. на суму  грн.
C3M0040120D Wolfspeed_C3M0040120D_data_sheet.pdf
C3M0040120D
Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2056.37 грн
30+1281.49 грн
120+1224.65 грн
В кошику  од. на суму  грн.
C3M0040120D-MVF
Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
товару немає в наявності
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C3M0040120J1 Wolfspeed_C3M0040120J1_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2056.37 грн
50+1224.65 грн
В кошику  од. на суму  грн.
C3M0040120J1-TR Wolfspeed_C3M0040120J1_data_sheet.pdf
C3M0040120J1-TR
Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+1165.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0040120J1-TR Wolfspeed_C3M0040120J1_data_sheet.pdf
C3M0040120J1-TR
Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2072.29 грн
10+1457.42 грн
100+1234.08 грн
В кошику  од. на суму  грн.
C3M0040120K Wolfspeed_C3M0040120K_data_sheet.pdf
C3M0040120K
Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2056.37 грн
30+1281.49 грн
120+1224.65 грн
В кошику  од. на суму  грн.
C3M0045065D Wolfspeed_C3M0045065D_data_sheet.pdf
C3M0045065D
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
на замовлення 454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1531.93 грн
30+921.11 грн
120+847.52 грн
В кошику  од. на суму  грн.
C3M0045065J1 Wolfspeed_C3M0045065J1_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 802 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1159.49 грн
50+860.56 грн
100+819.96 грн
В кошику  од. на суму  грн.
C3M0045065J1-TR Wolfspeed_C3M0045065J1_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
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C3M0045065J1-TR Wolfspeed_C3M0045065J1_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1549.44 грн
10+1069.50 грн
100+847.52 грн
В кошику  од. на суму  грн.
C3M0045065K Wolfspeed_C3M0045065K_data_sheet.pdf
C3M0045065K
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 49A SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
товару немає в наявності
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C3M0045065L-M-TR C3M0045065L.pdf
C3M0045065L-M-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
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C3M0045065L-M-TR C3M0045065L.pdf
C3M0045065L-M-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1387.89 грн
10+951.86 грн
100+736.10 грн
В кошику  од. на суму  грн.
C3M0045065L-TR C3M0045065L.pdf
C3M0045065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
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C3M0045065L-TR C3M0045065L.pdf
C3M0045065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1385.50 грн
10+950.26 грн
100+734.87 грн
В кошику  од. на суму  грн.
C3M0045075K1 Wolfspeed_C3M0045075K1_data_sheet.pdf
C3M0045075K1
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 42A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+870.62 грн
10+770.32 грн
30+738.39 грн
120+610.54 грн
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C3M0060065D Wolfspeed_C3M0060065D_data_sheet.pdf
C3M0060065D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1019.43 грн
30+716.19 грн
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C3M0060065J Wolfspeed_C3M0060065J_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 36A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 3137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1048.08 грн
50+690.07 грн
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C3M0060065J-TR Wolfspeed_C3M0060065J_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
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C3M0060065J-TR Wolfspeed_C3M0060065J_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 377 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1359.24 грн
10+931.17 грн
100+718.23 грн
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C3M0060065K Wolfspeed_C3M0060065K_data_sheet.pdf
C3M0060065K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 37A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1322.64 грн
30+791.98 грн
120+716.19 грн
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C3M0060065L-TR C3M0060065L.pdf
C3M0060065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
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C3M0060065L-TR C3M0060065L.pdf
C3M0060065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1181.78 грн
10+802.81 грн
100+613.90 грн
500+561.10 грн
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C3M0060075K1 Wolfspeed_C3M0060075K1_data_sheet.pdf
C3M0060075K1
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 35A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
на замовлення 379 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+891.31 грн
10+588.32 грн
30+505.88 грн
120+403.58 грн
270+388.98 грн
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C3M0065090D Wolfspeed_C3M0065090D_data_sheet.pdf
C3M0065090D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1407.79 грн
30+852.24 грн
120+767.10 грн
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C3M0065090J Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2664 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1216.00 грн
50+783.26 грн
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C3M0065090J-TR Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+813.37 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
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