Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (565) > Сторінка 2 з 10
Фото | Назва | Виробник | Інформація |
Доступність |
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C3D10060G | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 1759 шт: термін постачання 21-31 дні (днів) |
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C3D10060G-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D10060G-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 513 шт: термін постачання 21-31 дні (днів) |
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C3D10065A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 938 шт: термін постачання 21-31 дні (днів) |
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C3D10065E | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 3664 шт: термін постачання 21-31 дні (днів) |
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C3D10065E-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 628 шт: термін постачання 21-31 дні (днів) |
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C3D10065E-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz Current - Average Rectified (Io): 32A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D10065I | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 19A Supplier Device Package: TO-220-2 Isolated Tab Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A |
на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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C3D12065A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A Current - Reverse Leakage @ Vr: 74 µA @ 650 V |
на замовлення 1767 шт: термін постачання 21-31 дні (днів) |
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C3D16060D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 23A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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C3D16065A | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 878pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Current - Reverse Leakage @ Vr: 95 µA @ 650 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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C3D16065D | Wolfspeed, Inc. |
Description: DIODE ARR SIC SCHOT 650V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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C3D16065D1 | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Current - Reverse Leakage @ Vr: 95 µA @ 650 V |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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C3D20060D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 27.5A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 632 шт: термін постачання 21-31 дні (днів) |
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C3D20065D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 27.5A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 1940 шт: термін постачання 21-31 дні (днів) |
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C3D25170H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2079pF @ 0V, 1MHz Current - Average Rectified (Io): 26.3A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 25 A Current - Reverse Leakage @ Vr: 100 µA @ 1700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3D30065D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 39A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Current - Reverse Leakage @ Vr: 95 µA @ 650 V |
на замовлення 485 шт: термін постачання 21-31 дні (днів) |
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C3M0015065D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 15.5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V |
на замовлення 511 шт: термін постачання 21-31 дні (днів) |
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C3M0015065K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 15.5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V |
на замовлення 719 шт: термін постачання 21-31 дні (днів) |
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C3M0015065K-M | Wolfspeed, Inc. |
Description: MVF 200MM QUALIFIED MATERIAL Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 15.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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C3M0016120D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V |
на замовлення 798 шт: термін постачання 21-31 дні (днів) |
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C3M0016120K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V |
на замовлення 426 шт: термін постачання 21-31 дні (днів) |
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C3M0021120D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V Power Dissipation (Max): 469W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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C3M0021120K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V Power Dissipation (Max): 469W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V |
на замовлення 2755 шт: термін постачання 21-31 дні (днів) |
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C3M0025065D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V |
на замовлення 408 шт: термін постачання 21-31 дні (днів) |
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C3M0025065J1 | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 271W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V |
на замовлення 207 шт: термін постачання 21-31 дні (днів) |
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C3M0025065J1-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 271W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0025065J1-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 271W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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C3M0025065K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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C3M0025065L-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): -8V, +19V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0025065L-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): -8V, +19V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V |
на замовлення 1728 шт: термін постачання 21-31 дні (днів) |
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C3M0025075K1 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 9.22mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): -8V, +19V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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C3M0030090K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 11mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V |
на замовлення 2404 шт: термін постачання 21-31 дні (днів) |
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C3M0032120D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V |
на замовлення 224 шт: термін постачання 21-31 дні (днів) |
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C3M0032120J1 | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V |
на замовлення 514 шт: термін постачання 21-31 дні (днів) |
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C3M0032120K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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C3M0040120D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V |
на замовлення 165 шт: термін постачання 21-31 дні (днів) |
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C3M0040120D-MVF | Wolfspeed, Inc. |
Description: 1200V 40MOHM SIC MOSFET Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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C3M0040120J1 | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V |
на замовлення 251 шт: термін постачання 21-31 дні (днів) |
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C3M0040120J1-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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C3M0040120J1-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V |
на замовлення 1382 шт: термін постачання 21-31 дні (днів) |
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C3M0040120K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V |
на замовлення 1791 шт: термін постачання 21-31 дні (днів) |
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C3M0045065D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V |
на замовлення 454 шт: термін постачання 21-31 дні (днів) |
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C3M0045065J1 | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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C3M0045065J1-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
C3M0045065J1-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
на замовлення 678 шт: термін постачання 21-31 дні (днів) |
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C3M0045065K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0045065L-M-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0045065L-M-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
на замовлення 613 шт: термін постачання 21-31 дні (днів) |
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C3M0045065L-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
на замовлення 1668 шт: термін постачання 21-31 дні (днів) |
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C3M0045065L-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0045075K1 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 4.84mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): -8V, +19V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V |
на замовлення 262 шт: термін постачання 21-31 дні (днів) |
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C3M0060065D | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V |
на замовлення 545 шт: термін постачання 21-31 дні (днів) |
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C3M0060065J | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V |
на замовлення 2929 шт: термін постачання 21-31 дні (днів) |
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C3M0060065J-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
C3M0060065J-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V |
на замовлення 377 шт: термін постачання 21-31 дні (днів) |
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C3M0060065K | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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C3M0060065L-TR | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 3.64mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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C3M0060065L-TR | Wolfspeed, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 3.64mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V |
на замовлення 1710 шт: термін постачання 21-31 дні (днів) |
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C3M0060075K1 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V Power Dissipation (Max): 126W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 3.67mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): -8V, +19V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V |
на замовлення 379 шт: термін постачання 21-31 дні (днів) |
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C3D10060G |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1759 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 374.09 грн |
50+ | 184.09 грн |
100+ | 170.66 грн |
500+ | 132.79 грн |
1000+ | 124.93 грн |
C3D10060G-TR |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
C3D10060G-TR |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 29A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 513 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.79 грн |
10+ | 260.87 грн |
100+ | 186.24 грн |
C3D10065A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 417.66 грн |
50+ | 210.28 грн |
100+ | 191.72 грн |
500+ | 149.40 грн |
C3D10065E |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 3664 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 411.08 грн |
75+ | 196.05 грн |
150+ | 179.52 грн |
525+ | 146.43 грн |
1050+ | 136.89 грн |
2025+ | 129.27 грн |
C3D10065E-TR |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 628 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 411.08 грн |
10+ | 263.96 грн |
100+ | 188.84 грн |
500+ | 155.02 грн |
C3D10065E-TR |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 32A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
C3D10065I |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 19A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Description: DIODE SIL CARB 650V 19A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
на замовлення 268 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 434.93 грн |
50+ | 220.24 грн |
100+ | 201.07 грн |
C3D12065A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 35A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 74 µA @ 650 V
Description: DIODE SIL CARB 650V 35A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 74 µA @ 650 V
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 314.07 грн |
50+ | 174.60 грн |
C3D16060D |
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Виробник: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE ARRAY SIC 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 786.81 грн |
30+ | 419.77 грн |
C3D16065A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 39A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
Description: DIODE SIL CARB 650V 39A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 878pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 777.77 грн |
50+ | 597.65 грн |
100+ | 534.73 грн |
C3D16065D |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE ARR SIC SCHOT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 777.77 грн |
30+ | 597.64 грн |
120+ | 534.74 грн |
C3D16065D1 |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
Description: DIODE SIL CARBIDE 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 518.79 грн |
30+ | 398.44 грн |
120+ | 356.49 грн |
C3D20060D |
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Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 600V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE ARR SIC 600V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 681.58 грн |
30+ | 383.53 грн |
120+ | 323.68 грн |
510+ | 270.95 грн |
C3D20065D |
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Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE ARR SIC 650V 27.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27.5A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 707.88 грн |
30+ | 399.92 грн |
120+ | 338.02 грн |
510+ | 285.12 грн |
C3D25170H |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.7KV 26.3A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
Current - Average Rectified (Io): 26.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 26.3A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
Current - Average Rectified (Io): 26.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
товару немає в наявності
В кошику
од. на суму грн.
C3D30065D |
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Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
Description: DIODE ARR SIC 650V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 938.91 грн |
30+ | 544.49 грн |
120+ | 465.62 грн |
C3M0015065D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
Description: SICFET N-CH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 511 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3902.82 грн |
30+ | 2673.70 грн |
C3M0015065K |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 120A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
Description: SICFET N-CH 650V 120A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
на замовлення 719 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3121.76 грн |
30+ | 2673.70 грн |
C3M0015065K-M |
Виробник: Wolfspeed, Inc.
Description: MVF 200MM QUALIFIED MATERIAL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
Description: MVF 200MM QUALIFIED MATERIAL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
C3M0016120D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
Description: SICFET N-CH 1200V 115A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 798 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3929.13 грн |
30+ | 2580.25 грн |
120+ | 2463.78 грн |
C3M0016120K |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1.2KV 115A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
Description: SICFET N-CH 1.2KV 115A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
на замовлення 426 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6819.04 грн |
30+ | 5315.50 грн |
C3M0021120D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
Description: SICFET N-CH 1200V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1983.89 грн |
30+ | 1232.38 грн |
120+ | 1114.23 грн |
C3M0021120K |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 100A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
Description: SICFET N-CH 1200V 100A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Power Dissipation (Max): 469W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
на замовлення 2755 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2520.76 грн |
30+ | 1599.13 грн |
120+ | 1505.34 грн |
C3M0025065D |
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Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 408 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2053.77 грн |
30+ | 1406.82 грн |
C3M0025065J1 |
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Виробник: Wolfspeed, Inc.
Description: 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Description: 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 207 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1460.17 грн |
50+ | 836.07 грн |
100+ | 781.36 грн |
C3M0025065J1-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
C3M0025065J1-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
Description: SIC, MOSFET 25 M, 650V TO-263-7X
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 271W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 400 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1460.17 грн |
10+ | 1006.51 грн |
100+ | 924.01 грн |
C3M0025065K |
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Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
Description: GEN 3 650V 25 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2047.19 грн |
30+ | 1401.20 грн |
C3M0025065L-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
C3M0025065L-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
Description: SIC, MOSFET, 25M, 650V, TOLL, T&
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2475.54 грн |
10+ | 1743.44 грн |
25+ | 1576.62 грн |
100+ | 1459.88 грн |
C3M0025075K1 |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 80A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Description: SICFET N-CH 750V 80A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1639.40 грн |
10+ | 1263.34 грн |
30+ | 1171.05 грн |
C3M0030090K |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 73A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 11mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V
Description: SICFET N-CH 900V 73A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 11mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V
на замовлення 2404 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3703.03 грн |
30+ | 2506.60 грн |
C3M0032120D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
Description: SICFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2231.36 грн |
30+ | 1763.18 грн |
C3M0032120J1 |
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Виробник: Wolfspeed, Inc.
Description: 1200V 32MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
Description: 1200V 32MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
на замовлення 514 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2498.56 грн |
50+ | 1651.58 грн |
100+ | 1579.19 грн |
C3M0032120K |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 63A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
Description: SICFET N-CH 1200V 63A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2681.90 грн |
30+ | 2097.81 грн |
120+ | 1979.97 грн |
C3M0040120D |
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Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2124.48 грн |
30+ | 1323.93 грн |
120+ | 1265.21 грн |
C3M0040120J1 |
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Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Description: 1200V 40 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 251 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2161.47 грн |
50+ | 1236.04 грн |
100+ | 1213.37 грн |
C3M0040120J1-TR |
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Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Description: 1200V 40 M SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 1203.62 грн |
C3M0040120J1-TR |
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Виробник: Wolfspeed, Inc.
Description: 1200V 40 M SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Description: 1200V 40 M SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2140.92 грн |
10+ | 1505.68 грн |
100+ | 1274.95 грн |
C3M0040120K |
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Виробник: Wolfspeed, Inc.
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Description: 1200V 40MOHM SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2124.48 грн |
30+ | 1323.93 грн |
120+ | 1265.21 грн |
C3M0045065D |
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Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
Description: GEN 3 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
на замовлення 454 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1582.67 грн |
30+ | 951.62 грн |
120+ | 875.59 грн |
C3M0045065J1 |
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Виробник: Wolfspeed, Inc.
Description: 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: 650V 45 M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1158.43 грн |
50+ | 863.25 грн |
100+ | 825.43 грн |
500+ | 740.61 грн |
C3M0045065J1-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
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од. на суму грн.
C3M0045065J1-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1600.76 грн |
10+ | 1104.92 грн |
100+ | 875.59 грн |
C3M0045065K |
![]() |
Виробник: Wolfspeed, Inc.
Description: GEN 3 650V 49A SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
Description: GEN 3 650V 49A SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
C3M0045065L-M-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
C3M0045065L-M-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 613 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1433.86 грн |
10+ | 983.39 грн |
100+ | 760.48 грн |
C3M0045065L-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1431.39 грн |
10+ | 981.73 грн |
100+ | 759.21 грн |
C3M0045065L-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: SIC, MOSFET, 45M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товару немає в наявності
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од. на суму грн.
C3M0045075K1 |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 42A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Description: SICFET N-CH 750V 42A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
на замовлення 262 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 899.45 грн |
10+ | 795.83 грн |
30+ | 762.84 грн |
120+ | 630.76 грн |
C3M0060065D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
Description: SICFET N-CH 650V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1053.19 грн |
30+ | 739.91 грн |
C3M0060065J |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 36A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
Description: SICFET N-CH 650V 36A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1142.81 грн |
50+ | 673.88 грн |
100+ | 668.86 грн |
500+ | 623.29 грн |
C3M0060065J-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
C3M0060065J-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
Description: SIC, MOSFET, 60M, 650V, TO-263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 377 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1404.26 грн |
10+ | 962.01 грн |
100+ | 742.02 грн |
C3M0060065K |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 650V 37A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
Description: SICFET N-CH 650V 37A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 825.45 грн |
30+ | 474.90 грн |
120+ | 404.71 грн |
C3M0060065L-TR |
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Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
C3M0060065L-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1220.92 грн |
10+ | 829.40 грн |
100+ | 634.24 грн |
500+ | 579.68 грн |
C3M0060075K1 |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 35A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
Description: SICFET N-CH 750V 35A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
на замовлення 379 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 920.83 грн |
10+ | 607.80 грн |
30+ | 522.64 грн |
120+ | 416.94 грн |
270+ | 401.87 грн |