Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (565) > Сторінка 5 з 10
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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C6D40065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 63A TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
C6D40065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 131A TO263 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
C6D40065H | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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C6D50065D1 | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 437 шт: термін постачання 21-31 дні (днів) |
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C6D50065H | Wolfspeed, Inc. |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
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CAB004M12GM4 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 584W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V Vgs(th) (Max) @ Id: 4V @ 75mA |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CAB006A12GM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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CAB006A12GM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB006M12GM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Part Status: Active |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CAB006M12GM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.6V @ 69mA Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB008A12GM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 182A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Part Status: Active |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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CAB008M12GM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Part Status: Active |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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CAB008M12GM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 146A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Supplier Device Package: Module Part Status: Active |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CAB011M12FM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Part Status: Active |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CAB011M12FM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Supplier Device Package: Module |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CAB016M12FM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CAB016M12FM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: Module Part Status: Active |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CAB320M17XM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAB400M12XM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 395A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 92mA Part Status: Active |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CAB425M12XM3 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 115mA Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB450M12XM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 850W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 132mA Supplier Device Package: Module Part Status: Active |
на замовлення 76 шт: термін постачання 21-31 дні (днів) |
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CAB530M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 530A Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V Vgs(th) (Max) @ Id: 3.6V @ 140mA Supplier Device Package: Module Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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CAB5R0A23GM4 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 710W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4V @ 114mA |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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CAB650M17HM3 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 50mW Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 916A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 305mA Supplier Device Package: Module Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAB760M12HM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1015A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Supplier Device Package: Module Part Status: Active |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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CAB760M12HM3R | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 50mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Supplier Device Package: Module Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB7R5A23GM4 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAR600M12HN6 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 908A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V Supplier Device Package: Module |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS120M12BM2 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 925W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 193A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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CAS175M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 43mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS300M12BM2 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module, Screw Terminals Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1660W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 423A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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CAS300M17BM2 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1760W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 325A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS310M17BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 310A FET Feature: Standard Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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CAS350M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 85mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS380M17HM3 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 532A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 152mA Supplier Device Package: Module Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS480M12HM3 | Wolfspeed, Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS530M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 17mA |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.9V @ 11mA Part Status: Active |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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CCB021M12FM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Part Status: Active |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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CCB021M12FM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: Module Part Status: Active |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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CCB032M12FM3 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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CCB032M12FM3T | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: Module |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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CCS020M12CM2 | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 167W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CCS050M12CM2 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 337W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA Supplier Device Package: Module Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CG2H40045F-TB | Wolfspeed, Inc. |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CG2H40120F-AMP | Wolfspeed, Inc. |
![]() Packaging: Box For Use With/Related Products: CG2H40120F Frequency: 0Hz ~ 2.5GHz Type: HEMT Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
CG2H40120P | Wolfspeed, Inc. |
![]() Packaging: Tray Package / Case: 440206 Mounting Type: Surface Mount Frequency: 2.5GHz Power - Output: 120W Gain: 20dB Technology: HEMT Supplier Device Package: 440206 Voltage - Rated: 120 V Voltage - Test: 28 V Current - Test: 1 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CGD1200HB2P-BM2 | Wolfspeed, Inc. |
![]() Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CGD1200HB2P, CGD12HB00D Supplied Contents: Board(s) Primary Attributes: Dual Channel, Isolated Embedded: No Contents: Board(s) |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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CGD1200HB2P-BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CGD1200HB2P Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CGD12HB00D | Wolfspeed, Inc. |
![]() Packaging: Box For Use With/Related Products: CGD12HBXMP, CGD15HB62LP Accessory Type: Interface Board Utilized IC / Part: CGD12HBXMP, CGD15HB62LP |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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CGD12HBXMP | Wolfspeed, Inc. |
![]() Packaging: Box Function: Gate Driver Type: Power Management Supplied Contents: Board(s) Primary Attributes: Isolated Contents: Board(s) |
на замовлення 567 шт: термін постачання 21-31 дні (днів) |
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CGD15HB62LP | Wolfspeed, Inc. |
Description: GATE DRVR 150C FOR 1.2KV 325A HI Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CAS325M12HM2 Supplied Contents: Partially Populated Board(s) - Main IC Not Included Primary Attributes: 2-Channel (Dual) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CGD15HB62P | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAS300M12BM2 Packaging: Box Function: Gate Driver Type: Power Management Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included Utilized IC / Part: CAS300M12BM2 Primary Attributes: Isolated Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
CGD15HB62P1 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAS120M12BM2 Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CAS120M12BM2, CAS300M12BM2 Supplied Contents: Partially Populated Board(s) - Main IC Not Included Primary Attributes: Isolated Part Status: Obsolete Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CGD15SG00D2 | Wolfspeed, Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. |
C6D50065D1 |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 437 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1422.35 грн |
30+ | 864.90 грн |
120+ | 769.53 грн |
C6D50065H |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1436.32 грн |
30+ | 864.90 грн |
120+ | 769.53 грн |
CAB004M12GM4 |
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Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 17681.50 грн |
CAB006A12GM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 17440.60 грн |
CAB006A12GM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
CAB006M12GM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
на замовлення 52 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 21989.64 грн |
18+ | 20911.13 грн |
CAB006M12GM3T |
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Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
CAB008A12GM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 24572.89 грн |
18+ | 22162.70 грн |
CAB008M12GM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 13773.74 грн |
CAB008M12GM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 146A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 146A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Supplier Device Package: Module
Part Status: Active
на замовлення 54 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 17947.05 грн |
18+ | 15091.59 грн |
CAB011M12FM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
на замовлення 54 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12855.38 грн |
18+ | 11259.24 грн |
CAB011M12FM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
на замовлення 52 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 9403.11 грн |
18+ | 7068.30 грн |
CAB016M12FM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 9890.65 грн |
18+ | 8352.90 грн |
CAB016M12FM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 11146.10 грн |
18+ | 9471.95 грн |
CAB320M17XM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 100865.75 грн |
CAB400M12XM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 395A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 395A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 50716.11 грн |
CAB425M12XM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 53581.36 грн |
CAB450M12XM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
на замовлення 76 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 59444.23 грн |
CAB530M12BM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 530A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Supplier Device Package: Module
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 65598.13 грн |
CAB5R0A23GM4 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 31058.13 грн |
CAB650M17HM3 |
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Виробник: Wolfspeed, Inc.
Description: 650A 1700V SIC HALF-BRIDGE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
Description: 650A 1700V SIC HALF-BRIDGE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 371508.74 грн |
CAB760M12HM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
на замовлення 35 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 211960.90 грн |
CAB760M12HM3R |
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Виробник: Wolfspeed, Inc.
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 231904.98 грн |
CAB7R5A23GM4 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
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В кошику
од. на суму грн.
CAR600M12HN6 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 174657.60 грн |
CAS120M12BM2 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 117 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 40026.31 грн |
CAS175M12BM3 |
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Виробник: Wolfspeed, Inc.
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
CAS300M12BM2 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 11 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 67043.50 грн |
CAS300M17BM2 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 76181.87 грн |
CAS310M17BM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC MODULE 310A 1700V 62MM HALF-
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 310A
FET Feature: Standard
Part Status: Active
Description: SIC MODULE 310A 1700V 62MM HALF-
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 310A
FET Feature: Standard
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 90415.20 грн |
CAS350M12BM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
Description: SIC 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
CAS380M17HM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 299801.08 грн |
CAS480M12HM3 |
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Виробник: Wolfspeed, Inc.
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
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В кошику
од. на суму грн.
CAS530M12BM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 71561.30 грн |
CBB021M12FM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
на замовлення 37 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12159.83 грн |
18+ | 10649.98 грн |
CBB021M12FM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12594.76 грн |
18+ | 11097.21 грн |
CBB032M12FM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
на замовлення 54 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10769.55 грн |
18+ | 9094.92 грн |
CBB032M12FM3T |
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Виробник: Wolfspeed, Inc.
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 11230.78 грн |
18+ | 10010.84 грн |
CCB016M12GM3 |
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Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 16M,1200V, 48 MM, G
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: SIC, MODULE, 16M,1200V, 48 MM, G
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 24509.58 грн |
18+ | 22604.65 грн |
CCB016M12GM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 48 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 22801.94 грн |
18+ | 21783.20 грн |
CCB021M12FM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
на замовлення 35 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 15463.29 грн |
18+ | 14095.52 грн |
CCB021M12FM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
на замовлення 43 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 16015.79 грн |
18+ | 14681.08 грн |
CCB032M12FM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 6N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
на замовлення 42 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 13516.40 грн |
18+ | 11888.44 грн |
CCB032M12FM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 40A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 40A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: Module
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 14050.81 грн |
18+ | 12430.63 грн |
CCS020M12CM2 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 29.5A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 167W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 6N-CH 1200V 29.5A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 167W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 54 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 28016.94 грн |
10+ | 25838.97 грн |
25+ | 25269.01 грн |
CCS050M12CM2 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 87A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 337W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 6N-CH 1200V 87A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 337W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Supplier Device Package: Module
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
CG2H40045F-TB |
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Виробник: Wolfspeed, Inc.
Description: RF EVAL DEV KITS ISM
Description: RF EVAL DEV KITS ISM
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 42180.39 грн |
CG2H40120F-AMP |
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Виробник: Wolfspeed, Inc.
Description: CG2H40120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CG2H40120F
Frequency: 0Hz ~ 2.5GHz
Type: HEMT
Supplied Contents: Board(s)
Description: CG2H40120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CG2H40120F
Frequency: 0Hz ~ 2.5GHz
Type: HEMT
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
CG2H40120P |
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Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT 28V 440206
Packaging: Tray
Package / Case: 440206
Mounting Type: Surface Mount
Frequency: 2.5GHz
Power - Output: 120W
Gain: 20dB
Technology: HEMT
Supplier Device Package: 440206
Voltage - Rated: 120 V
Voltage - Test: 28 V
Current - Test: 1 A
Description: RF MOSFET HEMT 28V 440206
Packaging: Tray
Package / Case: 440206
Mounting Type: Surface Mount
Frequency: 2.5GHz
Power - Output: 120W
Gain: 20dB
Technology: HEMT
Supplier Device Package: 440206
Voltage - Rated: 120 V
Voltage - Test: 28 V
Current - Test: 1 A
товару немає в наявності
В кошику
од. на суму грн.
CGD1200HB2P-BM2 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P, CGD12HB00D
Supplied Contents: Board(s)
Primary Attributes: Dual Channel, Isolated
Embedded: No
Contents: Board(s)
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P, CGD12HB00D
Supplied Contents: Board(s)
Primary Attributes: Dual Channel, Isolated
Embedded: No
Contents: Board(s)
на замовлення 46 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 20781.88 грн |
CGD1200HB2P-BM3 |
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Виробник: Wolfspeed, Inc.
Description: DUAL CHANNEL DIFFERENTIAL ISOLAT
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: DUAL CHANNEL DIFFERENTIAL ISOLAT
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 22131.88 грн |
CGD12HB00D |
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Виробник: Wolfspeed, Inc.
Description: 2CH DIFF TRANSCEIVER COMP TOOL
Packaging: Box
For Use With/Related Products: CGD12HBXMP, CGD15HB62LP
Accessory Type: Interface Board
Utilized IC / Part: CGD12HBXMP, CGD15HB62LP
Description: 2CH DIFF TRANSCEIVER COMP TOOL
Packaging: Box
For Use With/Related Products: CGD12HBXMP, CGD15HB62LP
Accessory Type: Interface Board
Utilized IC / Part: CGD12HBXMP, CGD15HB62LP
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6793.56 грн |
CGD12HBXMP |
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Виробник: Wolfspeed, Inc.
Description: GATE DRIVER 1.2KV, 325A
Packaging: Box
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
Contents: Board(s)
Description: GATE DRIVER 1.2KV, 325A
Packaging: Box
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
Contents: Board(s)
на замовлення 567 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 27031.16 грн |
CGD15HB62LP |
Виробник: Wolfspeed, Inc.
Description: GATE DRVR 150C FOR 1.2KV 325A HI
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAS325M12HM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: 2-Channel (Dual)
Description: GATE DRVR 150C FOR 1.2KV 325A HI
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAS325M12HM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: 2-Channel (Dual)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 19933.41 грн |
CGD15HB62P |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAS300M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS300M12BM2
Primary Attributes: Isolated
Embedded: No
Description: EVAL BOARD FOR CAS300M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS300M12BM2
Primary Attributes: Isolated
Embedded: No
товару немає в наявності
В кошику
од. на суму грн.
CGD15HB62P1 |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAS120M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAS120M12BM2, CAS300M12BM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: Isolated
Part Status: Obsolete
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Description: EVAL BOARD FOR CAS120M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAS120M12BM2, CAS300M12BM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: Isolated
Part Status: Obsolete
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
товару немає в наявності
В кошику
од. на суму грн.
CGD15SG00D2 |
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Виробник: Wolfspeed, Inc.
Description: SIC MOSFET ISOLATED GATE DRIVER
Description: SIC MOSFET ISOLATED GATE DRIVER
товару немає в наявності
В кошику
од. на суму грн.