Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (579) > Сторінка 5 з 10
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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C6D30065H | Wolfspeed, Inc. |
Description: 30A, 650V SILICON CARBIDE SCHOTTPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Supplier Device Package: TO-247-2 |
на замовлення 372 шт: термін постачання 21-31 дні (днів) |
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| C6D40065A | Wolfspeed, Inc. |
Description: WOLFSPEED SIC, SCHOTTKY DIODE Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D40065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 63A TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D40065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 131A TO263 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D40065H | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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C6D50065D1 | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 136A TO2473Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 437 шт: термін постачання 21-31 дні (днів) |
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C6D50065H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 136A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
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CAB004M12GM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 4M, 1200V, 48 MM, GPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 584W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V Vgs(th) (Max) @ Id: 4V @ 75mA |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CAB006A12GM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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CAB006A12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB006M12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200VPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Part Status: Active |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CAB006M12GM3T | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 200A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.6V @ 69mA Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB008A12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 182APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 182A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Part Status: Active |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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CAB008M12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200VPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Part Status: Active |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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CAB008M12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 146A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 146A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Supplier Device Package: Module Part Status: Active |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CAB011M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 105APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Part Status: Active |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CAB011M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 105A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Supplier Device Package: Module |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CAB016M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 78APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CAB016M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 78A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: Module Part Status: Active |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CAB320M17XM3 | Wolfspeed, Inc. |
Description: SIC 1700V 320A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAB400M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 395APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 395A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 92mA Part Status: Active |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CAB425M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 450APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 115mA Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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CAB450M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 450A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 850W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 132mA Supplier Device Package: Module Part Status: Active |
на замовлення 76 шт: термін постачання 21-31 дні (днів) |
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CAB500M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 653A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 653A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 203mA Supplier Device Package: Module |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAB530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 530A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 530A Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V Vgs(th) (Max) @ Id: 3.6V @ 140mA Supplier Device Package: Module Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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CAB5R0A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 710W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4V @ 114mA |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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CAB650M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 916A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 916A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 305mA Supplier Device Package: Module Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB760M12HM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 1015A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1015A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Supplier Device Package: Module Part Status: Active |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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CAB760M12HM3R | Wolfspeed, Inc. |
Description: 760A 1200V SIC HALF-BRIDGE MODULPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 50mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Supplier Device Package: Module Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB7R5A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAR600M12HN6 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 908A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 908A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V Supplier Device Package: Module |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS120M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 193A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 925W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 193A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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CAS175M12BM3 | Wolfspeed, Inc. |
Description: 175A 1200V SIC HALF-BRIDGE MODULPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 43mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS300M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 423A MODULEPackaging: Bulk Package / Case: Module, Screw Terminals Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1660W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 423A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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CAS300M17BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 325A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1760W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 325A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS310M17BM3 | Wolfspeed, Inc. |
Description: SIC 1700V 310APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 310A Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS350M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 417APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 85mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CAS380M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 532A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 532A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 152mA Supplier Device Package: Module Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS480M12HM3 | Wolfspeed, Inc. |
Description: 1.2 KV, 480A HIGH PERFORMANCE SI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 630APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CBB017M12FM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 17 M, 1200 V, 33.8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 168W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Vgs(th) (Max) @ Id: 4V @ 19mA |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CBB017M12FM4T | Wolfspeed, Inc. |
Description: SIC, MODULE, 17 M, 1200 V, 33.8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 168W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Vgs(th) (Max) @ Id: 4V @ 19mA |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 105APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 50APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 17mA |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 40APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3T | Wolfspeed, Inc. |
Description: SIC 4N-CH 1200V 39APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.9V @ 11mA Part Status: Active |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 50A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 50A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CCB021M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 51APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Part Status: Active |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CCB021M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 51A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: Module Part Status: Active |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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CCB032M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 40APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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CCB032M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 40A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: Module |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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CCS020M12CM2 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 29.5A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 167W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CCS050M12CM2 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 87A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 337W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA Supplier Device Package: Module Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CG2H40045F-TB | Wolfspeed, Inc. |
Description: RF EVAL DEV KITS ISM |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| CG2H40120F-AMP | Wolfspeed, Inc. |
Description: CG2H40120F DEV BOARD WITH HEMTPackaging: Box For Use With/Related Products: CG2H40120F Frequency: 0Hz ~ 2.5GHz Type: HEMT Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| CG2H40120P | Wolfspeed, Inc. |
Description: RF MOSFET HEMT 28V 440206Packaging: Tray Package / Case: 440206 Mounting Type: Surface Mount Frequency: 2.5GHz Power - Output: 120W Gain: 20dB Technology: HEMT Supplier Device Package: 440206 Voltage - Rated: 120 V Voltage - Test: 28 V Current - Test: 1 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CGD1200HB2P-BM2 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGD1200HB2PPackaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CGD1200HB2P, CGD12HB00D Supplied Contents: Board(s) Primary Attributes: Dual Channel, Isolated Embedded: No Contents: Board(s) |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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CGD1200HB2P-BM3 | Wolfspeed, Inc. |
Description: DUAL CHANNEL DIFFERENTIAL ISOLATPackaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: CGD1200HB2P Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CGD12HB00D | Wolfspeed, Inc. |
Description: 2CH DIFF TRANSCEIVER COMP TOOLPackaging: Box For Use With/Related Products: CGD12HBXMP, CGD15HB62LP Accessory Type: Interface Board Utilized IC / Part: CGD12HBXMP, CGD15HB62LP |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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| C6D30065H |
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Виробник: Wolfspeed, Inc.
Description: 30A, 650V SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
Description: 30A, 650V SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
на замовлення 372 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 761.07 грн |
| 30+ | 452.23 грн |
| C6D50065D1 |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 437 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1412.71 грн |
| 30+ | 859.04 грн |
| 120+ | 764.31 грн |
| C6D50065H |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1426.59 грн |
| 30+ | 859.04 грн |
| 120+ | 764.31 грн |
| CAB004M12GM4 |
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Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17561.69 грн |
| CAB006A12GM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17322.43 грн |
| CAB006A12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
| CAB006M12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 21840.64 грн |
| 18+ | 20769.44 грн |
| CAB006M12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
| CAB008A12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
на замовлення 45 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 24406.39 грн |
| 18+ | 22012.53 грн |
| CAB008M12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13680.41 грн |
| CAB008M12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 146A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 146A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Supplier Device Package: Module
Part Status: Active
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17825.45 грн |
| 18+ | 14989.33 грн |
| CAB011M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 12768.28 грн |
| 18+ | 11182.95 грн |
| CAB011M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9339.40 грн |
| 18+ | 7020.41 грн |
| CAB016M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9823.64 грн |
| 18+ | 8296.30 грн |
| CAB016M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11070.58 грн |
| 18+ | 9407.77 грн |
| CAB320M17XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 86089.51 грн |
| CAB400M12XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 395A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 395A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 50372.47 грн |
| CAB425M12XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 51892.15 грн |
| CAB450M12XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
на замовлення 76 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 59041.44 грн |
| CAB500M17HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 653A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1700V 653A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Supplier Device Package: Module
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 219857.55 грн |
| CAB530M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 530A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Supplier Device Package: Module
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 65153.65 грн |
| CAB5R0A23GM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 30847.69 грн |
| CAB650M17HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 294076.21 грн |
| CAB760M12HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
на замовлення 35 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 210524.69 грн |
| CAB760M12HM3R |
![]() |
Виробник: Wolfspeed, Inc.
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 230333.63 грн |
| CAB7R5A23GM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
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од. на суму грн.
| CAR600M12HN6 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 173474.15 грн |
| CAS120M12BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 39755.10 грн |
| CAS175M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| CAS300M12BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 66589.23 грн |
| CAS300M17BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
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од. на суму грн.
| CAS310M17BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 1700V 310A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 310A
Part Status: Active
Description: SIC 1700V 310A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 310A
Part Status: Active
товару немає в наявності
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од. на суму грн.
| CAS350M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
товару немає в наявності
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од. на суму грн.
| CAS380M17HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 255959.20 грн |
| CAS480M12HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
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од. на суму грн.
| CAS530M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 71076.42 грн |
| CBB017M12FM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10389.54 грн |
| 18+ | 8405.69 грн |
| CBB017M12FM4T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10667.99 грн |
| 18+ | 8671.09 грн |
| CBB021M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8651.01 грн |
| 18+ | 6766.68 грн |
| CBB021M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8967.03 грн |
| 18+ | 7061.60 грн |
| CBB032M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10696.58 грн |
| 18+ | 9033.29 грн |
| CBB032M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11154.69 грн |
| 18+ | 9943.01 грн |
| CCB016M12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14461.08 грн |
| 18+ | 12369.38 грн |
| CCB016M12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14911.84 грн |
| 18+ | 12819.35 грн |
| CCB021M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10975.03 грн |
| 18+ | 8966.06 грн |
| CCB021M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
на замовлення 41 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11359.65 грн |
| 18+ | 9336.82 грн |
| CCB032M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 6N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13424.82 грн |
| 18+ | 11807.88 грн |
| CCB032M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 40A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 40A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: Module
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13955.60 грн |
| 18+ | 12346.40 грн |
| CCS020M12CM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 29.5A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 167W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 6N-CH 1200V 29.5A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 167W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 27827.10 грн |
| 10+ | 25663.89 грн |
| 25+ | 25097.79 грн |
| CCS050M12CM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 87A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 337W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 6N-CH 1200V 87A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 337W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Supplier Device Package: Module
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| CG2H40045F-TB |
![]() |
Виробник: Wolfspeed, Inc.
Description: RF EVAL DEV KITS ISM
Description: RF EVAL DEV KITS ISM
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 41894.58 грн |
| CG2H40120F-AMP |
![]() |
Виробник: Wolfspeed, Inc.
Description: CG2H40120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CG2H40120F
Frequency: 0Hz ~ 2.5GHz
Type: HEMT
Supplied Contents: Board(s)
Description: CG2H40120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CG2H40120F
Frequency: 0Hz ~ 2.5GHz
Type: HEMT
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| CG2H40120P |
![]() |
Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT 28V 440206
Packaging: Tray
Package / Case: 440206
Mounting Type: Surface Mount
Frequency: 2.5GHz
Power - Output: 120W
Gain: 20dB
Technology: HEMT
Supplier Device Package: 440206
Voltage - Rated: 120 V
Voltage - Test: 28 V
Current - Test: 1 A
Description: RF MOSFET HEMT 28V 440206
Packaging: Tray
Package / Case: 440206
Mounting Type: Surface Mount
Frequency: 2.5GHz
Power - Output: 120W
Gain: 20dB
Technology: HEMT
Supplier Device Package: 440206
Voltage - Rated: 120 V
Voltage - Test: 28 V
Current - Test: 1 A
товару немає в наявності
В кошику
од. на суму грн.
| CGD1200HB2P-BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P, CGD12HB00D
Supplied Contents: Board(s)
Primary Attributes: Dual Channel, Isolated
Embedded: No
Contents: Board(s)
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P, CGD12HB00D
Supplied Contents: Board(s)
Primary Attributes: Dual Channel, Isolated
Embedded: No
Contents: Board(s)
на замовлення 46 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 20641.07 грн |
| CGD1200HB2P-BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: DUAL CHANNEL DIFFERENTIAL ISOLAT
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: DUAL CHANNEL DIFFERENTIAL ISOLAT
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CGD1200HB2P
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 21981.92 грн |
| CGD12HB00D |
![]() |
Виробник: Wolfspeed, Inc.
Description: 2CH DIFF TRANSCEIVER COMP TOOL
Packaging: Box
For Use With/Related Products: CGD12HBXMP, CGD15HB62LP
Accessory Type: Interface Board
Utilized IC / Part: CGD12HBXMP, CGD15HB62LP
Description: 2CH DIFF TRANSCEIVER COMP TOOL
Packaging: Box
For Use With/Related Products: CGD12HBXMP, CGD15HB62LP
Accessory Type: Interface Board
Utilized IC / Part: CGD12HBXMP, CGD15HB62LP
на замовлення 32 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6747.52 грн |
























