Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (591) > Сторінка 5 з 10
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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C6D25170H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1700V 83A TO2472Current - Reverse Leakage @ Vr: 45 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 83A Capacitance @ Vr, F: 3108pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| C6D30065A | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO220 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D30065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 50A TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D30065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 95A TO263 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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C6D30065H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 88A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Supplier Device Package: TO-247-2 Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1851pF @ 0V, 1MHz Current - Average Rectified (Io): 88A Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 45 µA @ 650 V |
на замовлення 211 шт: термін постачання 21-31 дні (днів) |
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| C6D40065A | Wolfspeed, Inc. |
Description: WOLFSPEED SIC, SCHOTTKY DIODE Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D40065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 63A TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D40065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 131A TO263 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| C6D40065H | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO247 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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C6D50065D1 | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 136A TO2473Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 437 шт: термін постачання 21-31 дні (днів) |
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C6D50065H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 136A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
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CAB004M12GM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 4M, 1200V, 48 MM, GPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 584W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V Vgs(th) (Max) @ Id: 4V @ 75mA |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CAB006A12GM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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CAB006A12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200A MODULESupplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB006M12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200VRds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Part Status: Active Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CAB006M12GM3T | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 200A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.6V @ 69mA Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB008A12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 182APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 182A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Part Status: Active |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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CAB008M12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200VPart Status: Active Vgs(th) (Max) @ Id: 3.6V @ 46mA Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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CAB008M12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 146A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 46mA Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Current - Continuous Drain (Id) @ 25°C: 146A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CAB011A12GM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 141A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Supplier Device Package: Module |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CAB011A12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 141A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Supplier Device Package: Module |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB011M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 105APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Part Status: Active |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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CAB011M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 105A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Supplier Device Package: Module |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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CAB016M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 78APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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CAB016M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 78A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: Module Part Status: Active |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CAB320M17XM3 | Wolfspeed, Inc. |
Description: SIC 1700V 320A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAB400M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 395APart Status: Active Vgs(th) (Max) @ Id: 3.6V @ 92mA Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V Current - Continuous Drain (Id) @ 25°C: 395A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CAB425M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 450APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 115mA Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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CAB450M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 450A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 850W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 132mA Supplier Device Package: Module Part Status: Active |
на замовлення 216 шт: термін постачання 21-31 дні (днів) |
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CAB500M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 653A MODULETechnology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 203mA Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V Current - Continuous Drain (Id) @ 25°C: 653A (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAB530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 530A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 140mA Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V Current - Continuous Drain (Id) @ 25°C: 530A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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CAB5R0A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 710W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4V @ 114mA |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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CAB650M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 916A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 916A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 305mA Supplier Device Package: Module Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB760M12HM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 1015A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 280mA Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 1015A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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CAB760M12HM3R | Wolfspeed, Inc. |
Description: 760A 1200V SIC HALF-BRIDGE MODULPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 280mA Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 50mW Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB7R5A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB7R5A23GM4T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CAR600M12HN6 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 908A MODULESupplier Device Package: Module Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V Current - Continuous Drain (Id) @ 25°C: 908A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS120M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 193A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 925W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 193A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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CAS175M12BM3 | Wolfspeed, Inc. |
Description: 175A 1200V SIC HALF-BRIDGE MODULPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 43mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS300M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 423A MODULEPackaging: Bulk Package / Case: Module, Screw Terminals Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1660W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 423A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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| CAS300M12BM2T | Wolfspeed, Inc. |
Description: SIC, MODULE, 300A, 1200V, 62MM,Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CAS300M17BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 325A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1760W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 325A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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CAS310M17BM3 | Wolfspeed, Inc. |
Description: SIC 1700V 310ACurrent - Continuous Drain (Id) @ 25°C: 310A Drain to Source Voltage (Vdss): 1700V (1.7kV) Technology: Silicon Carbide (SiC) Mounting Type: Chassis Mount Package / Case: Module Part Status: Active Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| CAS325M12HM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 444A MODULE Packaging: Bulk Package / Case: Module Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3000W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 444A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V Vgs(th) (Max) @ Id: 4V @ 105mA Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CAS350M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 417APart Status: Active Vgs(th) (Max) @ Id: 3.6V @ 85mA Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS380M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 532A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 532A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 152mA Supplier Device Package: Module Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS480M12HM3 | Wolfspeed, Inc. |
Description: 1.2 KV, 480A HIGH PERFORMANCE SI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 630APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAS530M12BM3T | Wolfspeed, Inc. |
Description: SIC, MODULE, 530A, 1200V, 62MM,Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2000W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 645A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CBB011M12GM4T | Wolfspeed, Inc. |
Description: SIC, MODULE, 11M, 1200V, 48 MM,Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 292W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V Vgs(th) (Max) @ Id: 4V @ 28mA |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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CBB017M12FM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 17 M, 1200 V, 33.8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 168W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Vgs(th) (Max) @ Id: 4V @ 19mA |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CBB017M12FM4T | Wolfspeed, Inc. |
Description: SIC, MODULE, 17 M, 1200 V, 33.8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 168W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Vgs(th) (Max) @ Id: 4V @ 19mA |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 105APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 50APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 17mA |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 40APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3T | Wolfspeed, Inc. |
Description: SIC 4N-CH 1200V 39APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.9V @ 11mA Part Status: Active |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 50A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 50A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CCB021M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 51APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Part Status: Active |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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| C6D25170H |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 83A TO2472
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 83A
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 1700V 83A TO2472
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 83A
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| C6D30065H |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 88A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1851pF @ 0V, 1MHz
Current - Average Rectified (Io): 88A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
Description: DIODE SIL CARB 650V 88A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1851pF @ 0V, 1MHz
Current - Average Rectified (Io): 88A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
на замовлення 211 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 830.06 грн |
| 30+ | 481.98 грн |
| 120+ | 412.48 грн |
| C6D50065D1 |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 437 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1356.00 грн |
| 30+ | 824.55 грн |
| 120+ | 733.63 грн |
| C6D50065H |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1369.32 грн |
| 30+ | 824.55 грн |
| 120+ | 733.63 грн |
| CAB004M12GM4 |
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Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 16856.72 грн |
| CAB006A12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 16627.06 грн |
| CAB006A12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 200A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
товару немає в наявності
В кошику
од. на суму грн.
| CAB006M12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Description: SIC 2N-CH 1200V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 20963.91 грн |
| 18+ | 19935.70 грн |
| CAB006M12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
| CAB008A12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
на замовлення 45 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 23426.65 грн |
| 18+ | 21128.89 грн |
| CAB008M12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SIC 2N-CH 1200V
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11271.25 грн |
| CAB008M12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 146A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 146A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11615.35 грн |
| 18+ | 9640.07 грн |
| CAB011A12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11487.59 грн |
| 18+ | 9333.71 грн |
| CAB011A12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10579.93 грн |
| CAB011M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7902.42 грн |
| CAB011M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8188.51 грн |
| 18+ | 6398.90 грн |
| CAB016M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6702.40 грн |
| 18+ | 5041.04 грн |
| CAB016M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10626.18 грн |
| 18+ | 9030.12 грн |
| CAB320M17XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 82633.66 грн |
| CAB400M12XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 395A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 395A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 48350.39 грн |
| CAB425M12XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 50181.38 грн |
| CAB450M12XM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
на замовлення 216 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 60370.97 грн |
| CAB500M17HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 653A MODULE
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Description: MOSFET 2N-CH 1700V 653A MODULE
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 211031.92 грн |
| CAB530M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 530A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 62538.22 грн |
| CAB5R0A23GM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 29609.38 грн |
| CAB650M17HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 282271.25 грн |
| CAB760M12HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Description: SIC 2N-CH 1200V 1015A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 202073.69 грн |
| CAB760M12HM3R |
![]() |
Виробник: Wolfspeed, Inc.
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 50mW
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 50mW
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 221087.46 грн |
| CAB7R5A23GM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
товару немає в наявності
В кошику
од. на суму грн.
| CAB7R5A23GM4T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17188.27 грн |
| CAR600M12HN6 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 908A MODULE
Supplier Device Package: Module
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: MOSFET 2N-CH 1200V 908A MODULE
Supplier Device Package: Module
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 166510.46 грн |
| CAS120M12BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 33803.57 грн |
| CAS175M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| CAS300M12BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 61111.68 грн |
| CAS300M17BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 67244.24 грн |
| CAS310M17BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 1700V 310A
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Technology: Silicon Carbide (SiC)
Mounting Type: Chassis Mount
Package / Case: Module
Part Status: Active
Packaging: Box
Description: SIC 1700V 310A
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Technology: Silicon Carbide (SiC)
Mounting Type: Chassis Mount
Package / Case: Module
Part Status: Active
Packaging: Box
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| CAS325M12HM2 |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 444A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3000W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 444A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3000W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Supplier Device Package: Module
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| CAS350M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 417A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 417A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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од. на суму грн.
| CAS380M17HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 245684.35 грн |
| CAS480M12HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
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| CAS530M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 38720.44 грн |
| CAS530M12BM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
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од. на суму грн.
| CBB011M12GM4T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 11M, 1200V, 48 MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 292W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 28mA
Description: SIC, MODULE, 11M, 1200V, 48 MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 292W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 28mA
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14963.02 грн |
| 18+ | 12990.22 грн |
| CBB017M12FM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10046.94 грн |
| 18+ | 8128.48 грн |
| CBB017M12FM4T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10315.78 грн |
| 18+ | 8385.15 грн |
| CBB021M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7621.03 грн |
| 18+ | 6211.50 грн |
| CBB021M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8671.34 грн |
| 18+ | 6828.75 грн |
| CBB032M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10267.19 грн |
| 18+ | 8670.67 грн |
| CBB032M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10706.91 грн |
| 18+ | 9543.87 грн |
| CCB016M12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13629.75 грн |
| 18+ | 11658.40 грн |
| CCB016M12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 52 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14054.58 грн |
| 18+ | 12082.51 грн |
| CCB021M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
на замовлення 57 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10143.35 грн |
| 18+ | 8225.14 грн |


















