Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (590) > Сторінка 3 з 10

Обрати Сторінку:   [  << Попередня Сторінка ]  1 2 3 4 5 6 7 8 9 10  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
C3M0060065L-TR C3M0060065L-TR Wolfspeed, Inc. C3M0060065L.pdf Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
на замовлення 1156 шт:
термін постачання 21-31 дні (днів)
1+748.44 грн
10+498.98 грн
100+420.45 грн
В кошику  од. на суму  грн.
C3M0060075K1 C3M0060075K1 Wolfspeed, Inc. Wolfspeed_C3M0060075K1_data_sheet.pdf Description: SICFET N-CH 750V 35A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
1+748.44 грн
30+430.36 грн
120+366.75 грн
В кошику  од. на суму  грн.
C3M0065090D C3M0065090D Wolfspeed, Inc. Wolfspeed_C3M0065090D_data_sheet.pdf Description: SICFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 692 шт:
термін постачання 21-31 дні (днів)
1+1421.41 грн
30+859.64 грн
120+748.32 грн
510+690.34 грн
В кошику  од. на суму  грн.
C3M0065090J C3M0065090J Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2488 шт:
термін постачання 21-31 дні (днів)
1+1457.57 грн
50+837.41 грн
100+783.03 грн
500+713.35 грн
В кошику  од. на суму  грн.
C3M0065090J-TR C3M0065090J-TR Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0065090J-TR C3M0065090J-TR Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 638 шт:
термін постачання 21-31 дні (днів)
1+1457.57 грн
10+1006.81 грн
100+930.40 грн
В кошику  од. на суму  грн.
C3M0065100J C3M0065100J Wolfspeed, Inc. Wolfspeed_C3M0065100J_data_sheet.pdf Description: SICFET N-CH 1000V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1678 шт:
термін постачання 21-31 дні (днів)
1+1393.10 грн
50+987.04 грн
В кошику  од. на суму  грн.
C3M0065100J-TR C3M0065100J-TR Wolfspeed, Inc. Wolfspeed_C3M0065100J_data_sheet.pdf Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0065100J-TR C3M0065100J-TR Wolfspeed, Inc. Wolfspeed_C3M0065100J_data_sheet.pdf Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 592 шт:
термін постачання 21-31 дні (днів)
1+1704.43 грн
10+1185.63 грн
100+966.69 грн
В кошику  од. на суму  грн.
C3M0065100K C3M0065100K Wolfspeed, Inc. Wolfspeed_C3M0065100K_data_sheet.pdf Description: SICFET N-CH 1000V 35A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
1+1741.38 грн
30+1067.66 грн
120+987.03 грн
В кошику  од. на суму  грн.
C3M0075120D C3M0075120D Wolfspeed, Inc. Wolfspeed_C3M0075120D_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 435 шт:
термін постачання 21-31 дні (днів)
1+874.23 грн
30+507.13 грн
120+433.63 грн
В кошику  од. на суму  грн.
C3M0075120D-A C3M0075120D-A Wolfspeed, Inc. Wolfspeed_C3M0075120D-A_data_sheet.pdf Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 409 шт:
термін постачання 21-31 дні (днів)
1+1427.70 грн
30+890.93 грн
120+840.69 грн
В кошику  од. на суму  грн.
C3M0075120J C3M0075120J Wolfspeed, Inc. Wolfspeed_C3M0075120J_data_sheet.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 3568 шт:
термін постачання 21-31 дні (днів)
1+874.23 грн
50+477.04 грн
100+441.90 грн
500+368.95 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR Wolfspeed, Inc. Description: MOSFET N-CH 1200V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 536 шт:
термін постачання 21-31 дні (днів)
1+1069.99 грн
10+715.42 грн
25+633.39 грн
100+507.33 грн
250+498.20 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR Wolfspeed, Inc. Description: MOSFET N-CH 1200V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120J-TR C3M0075120J-TR Wolfspeed, Inc. Wolfspeed_C3M0075120J_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120J-TR C3M0075120J-TR Wolfspeed, Inc. Wolfspeed_C3M0075120J_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
1+874.23 грн
10+586.42 грн
100+481.20 грн
В кошику  од. на суму  грн.
C3M0075120K C3M0075120K Wolfspeed, Inc. Wolfspeed_C3M0075120K_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 547 шт:
термін постачання 21-31 дні (днів)
1+930.83 грн
30+542.74 грн
120+465.18 грн
510+400.21 грн
В кошику  од. на суму  грн.
C3M0075120K1 C3M0075120K1 Wolfspeed, Inc. Wolfspeed_C3M0075120K1_data_sheet.pdf Description: MOSFET N-CH 1200V 32A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
1+1069.20 грн
30+727.81 грн
120+654.76 грн
В кошику  од. на суму  грн.
C3M0075120K-A C3M0075120K-A Wolfspeed, Inc. Wolfspeed_C3M0075120K-A_data_sheet.pdf Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
1+1536.98 грн
30+931.43 грн
120+840.69 грн
В кошику  од. на суму  грн.
C3M0120065D C3M0120065D Wolfspeed, Inc. Wolfspeed_C3M0120065D_data_sheet.pdf Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
1+640.73 грн
10+479.60 грн
30+439.47 грн
120+378.77 грн
270+364.37 грн
В кошику  од. на суму  грн.
C3M0120065J C3M0120065J Wolfspeed, Inc. Wolfspeed_C3M0120065J_data_sheet.pdf Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1344 шт:
термін постачання 21-31 дні (днів)
1+640.73 грн
10+479.60 грн
50+424.60 грн
100+382.48 грн
250+365.60 грн
500+355.43 грн
1000+341.36 грн
В кошику  од. на суму  грн.
C3M0120065J-TR C3M0120065J-TR Wolfspeed, Inc. Wolfspeed_C3M0120065J_data_sheet.pdf Description: SIC, MOSFET, 120M, 650V, TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+332.72 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0120065J-TR C3M0120065J-TR Wolfspeed, Inc. Wolfspeed_C3M0120065J_data_sheet.pdf Description: SIC, MOSFET, 120M, 650V, TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1570 шт:
термін постачання 21-31 дні (днів)
1+748.44 грн
10+497.01 грн
100+392.16 грн
В кошику  од. на суму  грн.
C3M0120065K C3M0120065K Wolfspeed, Inc. Wolfspeed_C3M0120065K_data_sheet.pdf Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
1+640.73 грн
10+479.60 грн
30+439.47 грн
120+378.77 грн
В кошику  од. на суму  грн.
C3M0120065L-TR C3M0120065L-TR Wolfspeed, Inc. C3M0120065L.pdf Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0120065L-TR C3M0120065L-TR Wolfspeed, Inc. C3M0120065L.pdf Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
1+672.97 грн
10+444.39 грн
100+341.15 грн
В кошику  од. на суму  грн.
C3M0120090D C3M0120090D Wolfspeed, Inc. Wolfspeed_C3M0120090D_data_sheet.pdf Description: SICFET N-CH 900V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
1+1000.02 грн
30+586.95 грн
120+504.54 грн
В кошику  од. на суму  грн.
C3M0120090J C3M0120090J Wolfspeed, Inc. Wolfspeed_C3M0120090J_data_sheet.pdf Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 4242 шт:
термін постачання 21-31 дні (днів)
1+1022.82 грн
50+567.01 грн
100+526.84 грн
500+453.01 грн
В кошику  од. на суму  грн.
C3M0120090J-TR C3M0120090J-TR Wolfspeed, Inc. Wolfspeed_C3M0120090J_data_sheet.pdf Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2756 шт:
термін постачання 21-31 дні (днів)
1+886.81 грн
10+622.08 грн
100+502.03 грн
В кошику  од. на суму  грн.
C3M0120090J-TR C3M0120090J-TR Wolfspeed, Inc. Wolfspeed_C3M0120090J_data_sheet.pdf Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+521.34 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0120100J C3M0120100J Wolfspeed, Inc. Wolfspeed_C3M0120100J_data_sheet.pdf Description: SICFET N-CH 1000V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
1+1343.58 грн
50+761.60 грн
100+710.48 грн
500+665.52 грн
В кошику  од. на суму  грн.
C3M0120100J-TR C3M0120100J-TR Wolfspeed, Inc. Wolfspeed_C3M0120100J_data_sheet.pdf Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0120100J-TR C3M0120100J-TR Wolfspeed, Inc. Wolfspeed_C3M0120100J_data_sheet.pdf Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+1300.34 грн
10+881.97 грн
25+785.58 грн
100+649.65 грн
В кошику  од. на суму  грн.
C3M0120100K C3M0120100K Wolfspeed, Inc. Wolfspeed_C3M0120100K_data_sheet.pdf Description: SICFET N-CH 1000V 22A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2524 шт:
термін постачання 21-31 дні (днів)
1+887.59 грн
30+664.02 грн
В кошику  од. на суму  грн.
C3M0160120D C3M0160120D Wolfspeed, Inc. Wolfspeed_C3M0160120D_data_sheet.pdf Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
1+493.72 грн
30+273.95 грн
120+229.72 грн
510+185.76 грн
В кошику  од. на суму  грн.
C3M0160120J C3M0160120J Wolfspeed, Inc. Wolfspeed_C3M0160120J_data_sheet.pdf Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
1+616.36 грн
50+324.79 грн
100+298.88 грн
500+237.93 грн
1000+233.18 грн
В кошику  од. на суму  грн.
C3M0160120J-TR C3M0160120J-TR Wolfspeed, Inc. Wolfspeed_C3M0160120J_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0160120J-TR C3M0160120J-TR Wolfspeed, Inc. Wolfspeed_C3M0160120J_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+869.51 грн
10+581.65 грн
100+437.53 грн
В кошику  од. на суму  грн.
C3M0280090D C3M0280090D Wolfspeed, Inc. Wolfspeed_C3M0280090D_data_sheet.pdf Description: SICFET N-CH 900V 11.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 8306 шт:
термін постачання 21-31 дні (днів)
1+426.11 грн
30+263.25 грн
В кошику  од. на суму  грн.
C3M0280090J C3M0280090J Wolfspeed, Inc. Wolfspeed_C3M0280090J_data_sheet.pdf Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
1+670.61 грн
50+355.51 грн
100+327.54 грн
500+271.58 грн
В кошику  од. на суму  грн.
C3M0280090J-TR C3M0280090J-TR Wolfspeed, Inc. Wolfspeed_C3M0280090J_data_sheet.pdf Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+308.25 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0280090J-TR C3M0280090J-TR Wolfspeed, Inc. Wolfspeed_C3M0280090J_data_sheet.pdf Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 7019 шт:
термін постачання 21-31 дні (днів)
1+687.90 грн
10+454.01 грн
100+335.96 грн
В кошику  од. на суму  грн.
C3M0350120D C3M0350120D Wolfspeed, Inc. Wolfspeed_C3M0350120D_data_sheet.pdf Description: SICFET N-CH 1200V 7.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
1+504.73 грн
30+279.20 грн
120+233.79 грн
510+188.16 грн
1020+178.72 грн
В кошику  од. на суму  грн.
C3M0350120J C3M0350120J Wolfspeed, Inc. Wolfspeed_C3M0350120J_data_sheet.pdf Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
1+504.73 грн
50+260.63 грн
100+238.90 грн
500+188.52 грн
В кошику  од. на суму  грн.
C3M0350120J-TR C3M0350120J-TR Wolfspeed, Inc. Wolfspeed_C3M0350120J_data_sheet.pdf Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0350120J-TR C3M0350120J-TR Wolfspeed, Inc. Wolfspeed_C3M0350120J_data_sheet.pdf Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
1+637.59 грн
10+419.79 грн
100+309.74 грн
В кошику  од. на суму  грн.
C3M0900170D C3M0900170D Wolfspeed, Inc. Wolfspeed_C3M0900170D_data_sheet.pdf Description: SICFET N-CH 1700V 4.4A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0900170M C3M0900170M Wolfspeed, Inc. Wolfspeed_C3M0900170M_data_sheet.pdf Description: SIC, MOSFET, 900M, 1700V, TO-247
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Supplier Device Package: TO-3PF-3L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
1+422.18 грн
30+230.60 грн
В кошику  од. на суму  грн.
C4D02120A C4D02120A Wolfspeed, Inc. Wolfspeed_C4D02120A_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
2+212.27 грн
50+101.29 грн
100+91.25 грн
500+69.10 грн
1000+63.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E C4D02120E Wolfspeed, Inc. Wolfspeed_C4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 5512 шт:
термін постачання 21-31 дні (днів)
2+207.55 грн
75+92.95 грн
150+84.08 грн
525+67.06 грн
1050+61.93 грн
2025+57.83 грн
5025+52.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E-TR C4D02120E-TR Wolfspeed, Inc. Wolfspeed_C4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 15393 шт:
термін постачання 21-31 дні (днів)
2+202.05 грн
10+126.13 грн
100+86.90 грн
500+65.81 грн
1000+63.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E-TR C4D02120E-TR Wolfspeed, Inc. Wolfspeed_C4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+61.16 грн
5000+55.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
C4D05120A C4D05120A Wolfspeed, Inc. Wolfspeed_C4D05120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)
1+368.72 грн
50+186.46 грн
100+170.13 грн
500+132.82 грн
1000+126.69 грн
В кошику  од. на суму  грн.
C4D05120E C4D05120E Wolfspeed, Inc. Wolfspeed_C4D05120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 9613 шт:
термін постачання 21-31 дні (днів)
1+406.45 грн
75+194.41 грн
150+178.16 грн
525+145.52 грн
1050+136.15 грн
2025+129.16 грн
В кошику  од. на суму  грн.
C4D05120E-TR C4D05120E-TR Wolfspeed, Inc. Wolfspeed_C4D05120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 2123 шт:
термін постачання 21-31 дні (днів)
1+396.23 грн
10+254.83 грн
100+182.78 грн
500+158.67 грн
В кошику  од. на суму  грн.
C4D05120E-TR C4D05120E-TR Wolfspeed, Inc. Wolfspeed_C4D05120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C4D08120A C4D08120A Wolfspeed, Inc. Wolfspeed_C4D08120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 24.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
1+544.03 грн
50+267.38 грн
100+254.53 грн
500+210.04 грн
В кошику  од. на суму  грн.
C4D08120E C4D08120E Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+811.33 грн
75+417.87 грн
150+388.04 грн
В кошику  од. на суму  грн.
C4D08120E-TR C4D08120E-TR Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0060065L-TR C3M0060065L.pdf
C3M0060065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 60M, 650V, TOLL, IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.64mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 400 V
на замовлення 1156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+748.44 грн
10+498.98 грн
100+420.45 грн
В кошику  од. на суму  грн.
C3M0060075K1 Wolfspeed_C3M0060075K1_data_sheet.pdf
C3M0060075K1
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 750V 35A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+748.44 грн
30+430.36 грн
120+366.75 грн
В кошику  од. на суму  грн.
C3M0065090D Wolfspeed_C3M0065090D_data_sheet.pdf
C3M0065090D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 692 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1421.41 грн
30+859.64 грн
120+748.32 грн
510+690.34 грн
В кошику  од. на суму  грн.
C3M0065090J Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1457.57 грн
50+837.41 грн
100+783.03 грн
500+713.35 грн
В кошику  од. на суму  грн.
C3M0065090J-TR Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0065090J-TR Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 638 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1457.57 грн
10+1006.81 грн
100+930.40 грн
В кошику  од. на суму  грн.
C3M0065100J Wolfspeed_C3M0065100J_data_sheet.pdf
C3M0065100J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1393.10 грн
50+987.04 грн
В кошику  од. на суму  грн.
C3M0065100J-TR Wolfspeed_C3M0065100J_data_sheet.pdf
C3M0065100J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0065100J-TR Wolfspeed_C3M0065100J_data_sheet.pdf
C3M0065100J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 592 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1704.43 грн
10+1185.63 грн
100+966.69 грн
В кошику  од. на суму  грн.
C3M0065100K Wolfspeed_C3M0065100K_data_sheet.pdf
C3M0065100K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1741.38 грн
30+1067.66 грн
120+987.03 грн
В кошику  од. на суму  грн.
C3M0075120D Wolfspeed_C3M0075120D_data_sheet.pdf
C3M0075120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 435 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+874.23 грн
30+507.13 грн
120+433.63 грн
В кошику  од. на суму  грн.
C3M0075120D-A Wolfspeed_C3M0075120D-A_data_sheet.pdf
C3M0075120D-A
Виробник: Wolfspeed, Inc.
Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 409 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1427.70 грн
30+890.93 грн
120+840.69 грн
В кошику  од. на суму  грн.
C3M0075120J Wolfspeed_C3M0075120J_data_sheet.pdf
C3M0075120J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 3568 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+874.23 грн
50+477.04 грн
100+441.90 грн
500+368.95 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 536 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1069.99 грн
10+715.42 грн
25+633.39 грн
100+507.33 грн
250+498.20 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120J-TR Wolfspeed_C3M0075120J_data_sheet.pdf
C3M0075120J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120J-TR Wolfspeed_C3M0075120J_data_sheet.pdf
C3M0075120J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+874.23 грн
10+586.42 грн
100+481.20 грн
В кошику  од. на суму  грн.
C3M0075120K Wolfspeed_C3M0075120K_data_sheet.pdf
C3M0075120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 547 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+930.83 грн
30+542.74 грн
120+465.18 грн
510+400.21 грн
В кошику  од. на суму  грн.
C3M0075120K1 Wolfspeed_C3M0075120K1_data_sheet.pdf
C3M0075120K1
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 32A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1069.20 грн
30+727.81 грн
120+654.76 грн
В кошику  од. на суму  грн.
C3M0075120K-A Wolfspeed_C3M0075120K-A_data_sheet.pdf
C3M0075120K-A
Виробник: Wolfspeed, Inc.
Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1536.98 грн
30+931.43 грн
120+840.69 грн
В кошику  од. на суму  грн.
C3M0120065D Wolfspeed_C3M0120065D_data_sheet.pdf
C3M0120065D
Виробник: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+640.73 грн
10+479.60 грн
30+439.47 грн
120+378.77 грн
270+364.37 грн
В кошику  од. на суму  грн.
C3M0120065J Wolfspeed_C3M0120065J_data_sheet.pdf
C3M0120065J
Виробник: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+640.73 грн
10+479.60 грн
50+424.60 грн
100+382.48 грн
250+365.60 грн
500+355.43 грн
1000+341.36 грн
В кошику  од. на суму  грн.
C3M0120065J-TR Wolfspeed_C3M0120065J_data_sheet.pdf
C3M0120065J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 650V, TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+332.72 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0120065J-TR Wolfspeed_C3M0120065J_data_sheet.pdf
C3M0120065J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 650V, TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+748.44 грн
10+497.01 грн
100+392.16 грн
В кошику  од. на суму  грн.
C3M0120065K Wolfspeed_C3M0120065K_data_sheet.pdf
C3M0120065K
Виробник: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+640.73 грн
10+479.60 грн
30+439.47 грн
120+378.77 грн
В кошику  од. на суму  грн.
C3M0120065L-TR C3M0120065L.pdf
C3M0120065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0120065L-TR C3M0120065L.pdf
C3M0120065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+672.97 грн
10+444.39 грн
100+341.15 грн
В кошику  од. на суму  грн.
C3M0120090D Wolfspeed_C3M0120090D_data_sheet.pdf
C3M0120090D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1000.02 грн
30+586.95 грн
120+504.54 грн
В кошику  од. на суму  грн.
C3M0120090J Wolfspeed_C3M0120090J_data_sheet.pdf
C3M0120090J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 4242 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1022.82 грн
50+567.01 грн
100+526.84 грн
500+453.01 грн
В кошику  од. на суму  грн.
C3M0120090J-TR Wolfspeed_C3M0120090J_data_sheet.pdf
C3M0120090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2756 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+886.81 грн
10+622.08 грн
100+502.03 грн
В кошику  од. на суму  грн.
C3M0120090J-TR Wolfspeed_C3M0120090J_data_sheet.pdf
C3M0120090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+521.34 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0120100J Wolfspeed_C3M0120100J_data_sheet.pdf
C3M0120100J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1343.58 грн
50+761.60 грн
100+710.48 грн
500+665.52 грн
В кошику  од. на суму  грн.
C3M0120100J-TR Wolfspeed_C3M0120100J_data_sheet.pdf
C3M0120100J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0120100J-TR Wolfspeed_C3M0120100J_data_sheet.pdf
C3M0120100J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1300.34 грн
10+881.97 грн
25+785.58 грн
100+649.65 грн
В кошику  од. на суму  грн.
C3M0120100K Wolfspeed_C3M0120100K_data_sheet.pdf
C3M0120100K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 22A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+887.59 грн
30+664.02 грн
В кошику  од. на суму  грн.
C3M0160120D Wolfspeed_C3M0160120D_data_sheet.pdf
C3M0160120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+493.72 грн
30+273.95 грн
120+229.72 грн
510+185.76 грн
В кошику  од. на суму  грн.
C3M0160120J Wolfspeed_C3M0160120J_data_sheet.pdf
C3M0160120J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+616.36 грн
50+324.79 грн
100+298.88 грн
500+237.93 грн
1000+233.18 грн
В кошику  од. на суму  грн.
C3M0160120J-TR Wolfspeed_C3M0160120J_data_sheet.pdf
C3M0160120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0160120J-TR Wolfspeed_C3M0160120J_data_sheet.pdf
C3M0160120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+869.51 грн
10+581.65 грн
100+437.53 грн
В кошику  од. на суму  грн.
C3M0280090D Wolfspeed_C3M0280090D_data_sheet.pdf
C3M0280090D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 8306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+426.11 грн
30+263.25 грн
В кошику  од. на суму  грн.
C3M0280090J Wolfspeed_C3M0280090J_data_sheet.pdf
C3M0280090J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+670.61 грн
50+355.51 грн
100+327.54 грн
500+271.58 грн
В кошику  од. на суму  грн.
C3M0280090J-TR Wolfspeed_C3M0280090J_data_sheet.pdf
C3M0280090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+308.25 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0280090J-TR Wolfspeed_C3M0280090J_data_sheet.pdf
C3M0280090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 7019 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+687.90 грн
10+454.01 грн
100+335.96 грн
В кошику  од. на суму  грн.
C3M0350120D Wolfspeed_C3M0350120D_data_sheet.pdf
C3M0350120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 7.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+504.73 грн
30+279.20 грн
120+233.79 грн
510+188.16 грн
1020+178.72 грн
В кошику  од. на суму  грн.
C3M0350120J Wolfspeed_C3M0350120J_data_sheet.pdf
C3M0350120J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+504.73 грн
50+260.63 грн
100+238.90 грн
500+188.52 грн
В кошику  од. на суму  грн.
C3M0350120J-TR Wolfspeed_C3M0350120J_data_sheet.pdf
C3M0350120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0350120J-TR Wolfspeed_C3M0350120J_data_sheet.pdf
C3M0350120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+637.59 грн
10+419.79 грн
100+309.74 грн
В кошику  од. на суму  грн.
C3M0900170D Wolfspeed_C3M0900170D_data_sheet.pdf
C3M0900170D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 4.4A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0900170M Wolfspeed_C3M0900170M_data_sheet.pdf
C3M0900170M
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 900M, 1700V, TO-247
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Supplier Device Package: TO-3PF-3L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+422.18 грн
30+230.60 грн
В кошику  од. на суму  грн.
C4D02120A Wolfspeed_C4D02120A_data_sheet.pdf
C4D02120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+212.27 грн
50+101.29 грн
100+91.25 грн
500+69.10 грн
1000+63.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E Wolfspeed_C4D02120E_data_sheet.pdf
C4D02120E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 5512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+207.55 грн
75+92.95 грн
150+84.08 грн
525+67.06 грн
1050+61.93 грн
2025+57.83 грн
5025+52.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E-TR Wolfspeed_C4D02120E_data_sheet.pdf
C4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 15393 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+202.05 грн
10+126.13 грн
100+86.90 грн
500+65.81 грн
1000+63.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E-TR Wolfspeed_C4D02120E_data_sheet.pdf
C4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+61.16 грн
5000+55.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
C4D05120A Wolfspeed_C4D05120A_data_sheet.pdf
C4D05120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+368.72 грн
50+186.46 грн
100+170.13 грн
500+132.82 грн
1000+126.69 грн
В кошику  од. на суму  грн.
C4D05120E Wolfspeed_C4D05120E_data_sheet.pdf
C4D05120E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 9613 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+406.45 грн
75+194.41 грн
150+178.16 грн
525+145.52 грн
1050+136.15 грн
2025+129.16 грн
В кошику  од. на суму  грн.
C4D05120E-TR Wolfspeed_C4D05120E_data_sheet.pdf
C4D05120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 2123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+396.23 грн
10+254.83 грн
100+182.78 грн
500+158.67 грн
В кошику  од. на суму  грн.
C4D05120E-TR Wolfspeed_C4D05120E_data_sheet.pdf
C4D05120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C4D08120A Wolfspeed_C4D08120A_data_sheet.pdf
C4D08120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 24.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+544.03 грн
50+267.38 грн
100+254.53 грн
500+210.04 грн
В кошику  од. на суму  грн.
C4D08120E Wolfspeed_C4D08120E_data_sheet.pdf
C4D08120E
Виробник: Wolfspeed, Inc.
Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+811.33 грн
75+417.87 грн
150+388.04 грн
В кошику  од. на суму  грн.
C4D08120E-TR Wolfspeed_C4D08120E_data_sheet.pdf
C4D08120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 2 3 4 5 6 7 8 9 10  [ Наступна Сторінка >> ]