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C3M0065090D C3M0065090D Wolfspeed, Inc. Wolfspeed_C3M0065090D_data_sheet.pdf Description: SICFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2454 шт:
термін постачання 21-31 дні (днів)
1+1454.41 грн
30+880.47 грн
120+792.51 грн
В кошику  од. на суму  грн.
C3M0065090J C3M0065090J Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0065090J-TR C3M0065090J-TR Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+840.31 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0065090J-TR C3M0065090J-TR Wolfspeed, Inc. Wolfspeed_C3M0065090J_data_sheet.pdf Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)
1+1266.96 грн
10+972.70 грн
100+809.19 грн
В кошику  од. на суму  грн.
C3M0065100J C3M0065100J Wolfspeed, Inc. Wolfspeed_C3M0065100J_data_sheet.pdf Description: SICFET N-CH 1000V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1678 шт:
термін постачання 21-31 дні (днів)
1+1456.88 грн
50+1032.22 грн
В кошику  од. на суму  грн.
C3M0065100J-TR C3M0065100J-TR Wolfspeed, Inc. Wolfspeed_C3M0065100J_data_sheet.pdf Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0065100J-TR C3M0065100J-TR Wolfspeed, Inc. Wolfspeed_C3M0065100J_data_sheet.pdf Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 592 шт:
термін постачання 21-31 дні (днів)
1+1782.46 грн
10+1239.91 грн
100+1010.94 грн
В кошику  од. на суму  грн.
C3M0065100K C3M0065100K Wolfspeed, Inc. Wolfspeed_C3M0065100K_data_sheet.pdf Description: SICFET N-CH 1000V 35A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
1+1821.10 грн
30+1116.53 грн
120+1032.22 грн
В кошику  од. на суму  грн.
C3M0075120D C3M0075120D Wolfspeed, Inc. Wolfspeed_C3M0075120D_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120D-A C3M0075120D-A Wolfspeed, Inc. Wolfspeed_C3M0075120D-A_data_sheet.pdf Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 409 шт:
термін постачання 21-31 дні (днів)
1+1493.05 грн
30+931.72 грн
120+879.17 грн
В кошику  од. на суму  грн.
C3M0075120J C3M0075120J Wolfspeed, Inc. Wolfspeed_C3M0075120J_data_sheet.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 3889 шт:
термін постачання 21-31 дні (днів)
1+1586.78 грн
50+911.07 грн
100+851.89 грн
500+740.61 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR Wolfspeed, Inc. Description: MOSFET N-CH 1200V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 536 шт:
термін постачання 21-31 дні (днів)
1+1118.97 грн
10+748.17 грн
25+662.38 грн
100+530.55 грн
250+521.01 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR Wolfspeed, Inc. Description: MOSFET N-CH 1200V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120J-TR C3M0075120J-TR Wolfspeed, Inc. Wolfspeed_C3M0075120J_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120J-TR C3M0075120J-TR Wolfspeed, Inc. Wolfspeed_C3M0075120J_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
1+1617.20 грн
10+1116.48 грн
100+984.50 грн
В кошику  од. на суму  грн.
C3M0075120K C3M0075120K Wolfspeed, Inc. Wolfspeed_C3M0075120K_data_sheet.pdf Description: SICFET N-CH 1200V 30A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
1+1673.11 грн
30+1017.46 грн
120+887.55 грн
510+807.78 грн
В кошику  од. на суму  грн.
C3M0075120K1 C3M0075120K1 Wolfspeed, Inc. Wolfspeed_C3M0075120K1_data_sheet.pdf Description: MOSFET N-CH 1200V 32A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
1+1118.15 грн
30+761.13 грн
120+684.73 грн
В кошику  од. на суму  грн.
C3M0075120K-A C3M0075120K-A Wolfspeed, Inc. Wolfspeed_C3M0075120K-A_data_sheet.pdf Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
1+1607.33 грн
30+974.07 грн
120+879.17 грн
В кошику  од. на суму  грн.
C3M0120065D C3M0120065D Wolfspeed, Inc. Wolfspeed_C3M0120065D_data_sheet.pdf Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 355 шт:
термін постачання 21-31 дні (днів)
1+809.83 грн
10+545.81 грн
25+485.35 грн
100+392.03 грн
250+361.30 грн
В кошику  од. на суму  грн.
C3M0120065J C3M0120065J Wolfspeed, Inc. Wolfspeed_C3M0120065J_data_sheet.pdf Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1411 шт:
термін постачання 21-31 дні (днів)
1+642.11 грн
10+432.28 грн
50+355.20 грн
100+324.60 грн
В кошику  од. на суму  грн.
C3M0120065K C3M0120065K Wolfspeed, Inc. Wolfspeed_C3M0120065K_data_sheet.pdf Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 287 шт:
термін постачання 21-31 дні (днів)
1+809.83 грн
10+545.81 грн
25+485.35 грн
100+392.03 грн
250+361.30 грн
В кошику  од. на суму  грн.
C3M0120065L-TR C3M0120065L-TR Wolfspeed, Inc. C3M0120065L.pdf Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0120065L-TR C3M0120065L-TR Wolfspeed, Inc. C3M0120065L.pdf Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0120090D C3M0120090D Wolfspeed, Inc. Wolfspeed_C3M0120090D_data_sheet.pdf Description: SICFET N-CH 900V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
1+1107.46 грн
30+650.10 грн
120+603.76 грн
В кошику  од. на суму  грн.
C3M0120090J C3M0120090J Wolfspeed, Inc. Wolfspeed_C3M0120090J_data_sheet.pdf Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 5823 шт:
термін постачання 21-31 дні (днів)
1+906.03 грн
50+561.41 грн
В кошику  од. на суму  грн.
C3M0120090J-TR C3M0120090J-TR Wolfspeed, Inc. Wolfspeed_C3M0120090J_data_sheet.pdf Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+545.20 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0120090J-TR C3M0120090J-TR Wolfspeed, Inc. Wolfspeed_C3M0120090J_data_sheet.pdf Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2756 шт:
термін постачання 21-31 дні (днів)
1+927.40 грн
10+650.55 грн
100+525.01 грн
В кошику  од. на суму  грн.
C3M0120100J C3M0120100J Wolfspeed, Inc. Wolfspeed_C3M0120100J_data_sheet.pdf Description: SICFET N-CH 1000V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
1+1405.08 грн
50+796.47 грн
100+743.01 грн
500+695.98 грн
В кошику  од. на суму  грн.
C3M0120100J-TR C3M0120100J-TR Wolfspeed, Inc. Wolfspeed_C3M0120100J_data_sheet.pdf Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+1359.86 грн
10+922.35 грн
25+821.55 грн
100+679.39 грн
В кошику  од. на суму  грн.
C3M0120100J-TR C3M0120100J-TR Wolfspeed, Inc. Wolfspeed_C3M0120100J_data_sheet.pdf Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0120100K C3M0120100K Wolfspeed, Inc. Wolfspeed_C3M0120100K_data_sheet.pdf Description: SICFET N-CH 1000V 22A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2524 шт:
термін постачання 21-31 дні (днів)
1+928.23 грн
30+694.41 грн
В кошику  од. на суму  грн.
C3M0160120D C3M0160120D Wolfspeed, Inc. Wolfspeed_C3M0160120D_data_sheet.pdf Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 1897 шт:
термін постачання 21-31 дні (днів)
1+606.76 грн
30+407.65 грн
В кошику  од. на суму  грн.
C3M0160120J Wolfspeed, Inc. Wolfspeed_C3M0160120J_data_sheet.pdf Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 2187 шт:
термін постачання 21-31 дні (днів)
1+767.08 грн
50+461.90 грн
В кошику  од. на суму  грн.
C3M0160120J-TR C3M0160120J-TR Wolfspeed, Inc. Wolfspeed_C3M0160120J_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+909.32 грн
10+608.27 грн
100+457.56 грн
В кошику  од. на суму  грн.
C3M0160120J-TR C3M0160120J-TR Wolfspeed, Inc. Wolfspeed_C3M0160120J_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0280090D C3M0280090D Wolfspeed, Inc. Wolfspeed_C3M0280090D_data_sheet.pdf Description: SICFET N-CH 900V 11.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 8306 шт:
термін постачання 21-31 дні (днів)
1+445.61 грн
30+275.31 грн
В кошику  од. на суму  грн.
C3M0280090J C3M0280090J Wolfspeed, Inc. Wolfspeed_C3M0280090J_data_sheet.pdf Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
1+701.31 грн
50+371.79 грн
100+342.54 грн
500+284.01 грн
В кошику  од. на суму  грн.
C3M0280090J-TR C3M0280090J-TR Wolfspeed, Inc. Wolfspeed_C3M0280090J_data_sheet.pdf Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+322.36 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0280090J-TR C3M0280090J-TR Wolfspeed, Inc. Wolfspeed_C3M0280090J_data_sheet.pdf Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 7019 шт:
термін постачання 21-31 дні (днів)
1+719.39 грн
10+474.79 грн
100+351.34 грн
В кошику  од. на суму  грн.
C3M0350120D C3M0350120D Wolfspeed, Inc. Wolfspeed_C3M0350120D_data_sheet.pdf Description: SICFET N-CH 1200V 7.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
1+631.42 грн
30+299.43 грн
120+288.49 грн
510+251.50 грн
В кошику  од. на суму  грн.
C3M0350120J C3M0350120J Wolfspeed, Inc. Wolfspeed_C3M0350120J_data_sheet.pdf Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 956 шт:
термін постачання 21-31 дні (днів)
1+631.42 грн
50+332.88 грн
100+306.39 грн
500+251.50 грн
В кошику  од. на суму  грн.
C3M0350120J-TR C3M0350120J-TR Wolfspeed, Inc. Wolfspeed_C3M0350120J_data_sheet.pdf Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0350120J-TR C3M0350120J-TR Wolfspeed, Inc. Wolfspeed_C3M0350120J_data_sheet.pdf Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
1+666.78 грн
10+439.01 грн
100+323.91 грн
В кошику  од. на суму  грн.
C4D02120A C4D02120A Wolfspeed, Inc. Wolfspeed_C4D02120A_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
2+221.98 грн
50+105.93 грн
100+95.43 грн
500+72.26 грн
1000+66.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E C4D02120E Wolfspeed, Inc. Wolfspeed_C4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 10092 шт:
термін постачання 21-31 дні (днів)
2+219.52 грн
75+98.08 грн
150+88.71 грн
525+70.76 грн
1050+65.35 грн
2025+61.02 грн
5025+55.18 грн
10050+52.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E-TR C4D02120E-TR Wolfspeed, Inc. Wolfspeed_C4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+66.12 грн
5000+59.78 грн
7500+57.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
C4D02120E-TR C4D02120E-TR Wolfspeed, Inc. Wolfspeed_C4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 22919 шт:
термін постачання 21-31 дні (днів)
2+218.70 грн
10+136.33 грн
100+93.95 грн
500+71.15 грн
1000+65.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D05120A C4D05120A Wolfspeed, Inc. Wolfspeed_C4D05120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)
1+435.75 грн
50+220.24 грн
100+200.95 грн
500+156.88 грн
1000+149.64 грн
В кошику  од. на суму  грн.
C4D05120E C4D05120E Wolfspeed, Inc. Wolfspeed_C4D05120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 2682 шт:
термін постачання 21-31 дні (днів)
1+432.46 грн
75+181.71 грн
150+170.83 грн
525+149.57 грн
1050+142.06 грн
2025+136.83 грн
В кошику  од. на суму  грн.
C4D05120E-TR C4D05120E-TR Wolfspeed, Inc. Wolfspeed_C4D05120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
товару немає в наявності
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C4D05120E-TR C4D05120E-TR Wolfspeed, Inc. Wolfspeed_C4D05120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
1+421.77 грн
10+271.08 грн
100+194.41 грн
В кошику  од. на суму  грн.
C4D08120A C4D08120A Wolfspeed, Inc. Wolfspeed_C4D08120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 24.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
1+568.94 грн
50+279.62 грн
100+266.18 грн
500+219.65 грн
В кошику  од. на суму  грн.
C4D08120E C4D08120E Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 808 шт:
термін постачання 21-31 дні (днів)
1+681.58 грн
75+367.18 грн
В кошику  од. на суму  грн.
C4D08120E-TR C4D08120E-TR Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C4D08120E-TR C4D08120E-TR Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C4D10120A C4D10120A Wolfspeed, Inc. Wolfspeed_C4D10120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
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C4D10120D C4D10120D Wolfspeed, Inc. Wolfspeed_C4D10120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 19A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
C4D10120E C4D10120E Wolfspeed, Inc. Wolfspeed_C4D10120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 5146 шт:
термін постачання 21-31 дні (днів)
1+716.11 грн
75+361.86 грн
150+334.95 грн
525+278.47 грн
1050+264.88 грн
В кошику  од. на суму  грн.
C4D10120E-TR C4D10120E-TR Wolfspeed, Inc. Wolfspeed_C4D10120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+422.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
C4D10120E-TR C4D10120E-TR Wolfspeed, Inc. Wolfspeed_C4D10120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 2630 шт:
термін постачання 21-31 дні (днів)
1+945.49 грн
10+634.24 грн
100+497.68 грн
В кошику  од. на суму  грн.
C3M0065090D Wolfspeed_C3M0065090D_data_sheet.pdf
C3M0065090D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 2454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1454.41 грн
30+880.47 грн
120+792.51 грн
В кошику  од. на суму  грн.
C3M0065090J Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
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C3M0065090J-TR Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+840.31 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0065090J-TR Wolfspeed_C3M0065090J_data_sheet.pdf
C3M0065090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1266.96 грн
10+972.70 грн
100+809.19 грн
В кошику  од. на суму  грн.
C3M0065100J Wolfspeed_C3M0065100J_data_sheet.pdf
C3M0065100J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1456.88 грн
50+1032.22 грн
В кошику  од. на суму  грн.
C3M0065100J-TR Wolfspeed_C3M0065100J_data_sheet.pdf
C3M0065100J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0065100J-TR Wolfspeed_C3M0065100J_data_sheet.pdf
C3M0065100J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 592 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1782.46 грн
10+1239.91 грн
100+1010.94 грн
В кошику  од. на суму  грн.
C3M0065100K Wolfspeed_C3M0065100K_data_sheet.pdf
C3M0065100K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 35A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1821.10 грн
30+1116.53 грн
120+1032.22 грн
В кошику  од. на суму  грн.
C3M0075120D Wolfspeed_C3M0075120D_data_sheet.pdf
C3M0075120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120D-A Wolfspeed_C3M0075120D-A_data_sheet.pdf
C3M0075120D-A
Виробник: Wolfspeed, Inc.
Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 409 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1493.05 грн
30+931.72 грн
120+879.17 грн
В кошику  од. на суму  грн.
C3M0075120J Wolfspeed_C3M0075120J_data_sheet.pdf
C3M0075120J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 3889 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1586.78 грн
50+911.07 грн
100+851.89 грн
500+740.61 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 536 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1118.97 грн
10+748.17 грн
25+662.38 грн
100+530.55 грн
250+521.01 грн
В кошику  од. на суму  грн.
C3M0075120J2-TR
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
C3M0075120J-TR Wolfspeed_C3M0075120J_data_sheet.pdf
C3M0075120J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
товару немає в наявності
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C3M0075120J-TR Wolfspeed_C3M0075120J_data_sheet.pdf
C3M0075120J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1617.20 грн
10+1116.48 грн
100+984.50 грн
В кошику  од. на суму  грн.
C3M0075120K Wolfspeed_C3M0075120K_data_sheet.pdf
C3M0075120K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 30A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1673.11 грн
30+1017.46 грн
120+887.55 грн
510+807.78 грн
В кошику  од. на суму  грн.
C3M0075120K1 Wolfspeed_C3M0075120K1_data_sheet.pdf
C3M0075120K1
Виробник: Wolfspeed, Inc.
Description: MOSFET N-CH 1200V 32A TO247-4L
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1118.15 грн
30+761.13 грн
120+684.73 грн
В кошику  од. на суму  грн.
C3M0075120K-A Wolfspeed_C3M0075120K-A_data_sheet.pdf
C3M0075120K-A
Виробник: Wolfspeed, Inc.
Description: 75M 1200V 175C SIC FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1607.33 грн
30+974.07 грн
120+879.17 грн
В кошику  од. на суму  грн.
C3M0120065D Wolfspeed_C3M0120065D_data_sheet.pdf
C3M0120065D
Виробник: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+809.83 грн
10+545.81 грн
25+485.35 грн
100+392.03 грн
250+361.30 грн
В кошику  од. на суму  грн.
C3M0120065J Wolfspeed_C3M0120065J_data_sheet.pdf
C3M0120065J
Виробник: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 1411 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+642.11 грн
10+432.28 грн
50+355.20 грн
100+324.60 грн
В кошику  од. на суму  грн.
C3M0120065K Wolfspeed_C3M0120065K_data_sheet.pdf
C3M0120065K
Виробник: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
на замовлення 287 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+809.83 грн
10+545.81 грн
25+485.35 грн
100+392.03 грн
250+361.30 грн
В кошику  од. на суму  грн.
C3M0120065L-TR C3M0120065L.pdf
C3M0120065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
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C3M0120065L-TR C3M0120065L.pdf
C3M0120065L-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 650V, TOLL, I
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
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C3M0120090D Wolfspeed_C3M0120090D_data_sheet.pdf
C3M0120090D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1107.46 грн
30+650.10 грн
120+603.76 грн
В кошику  од. на суму  грн.
C3M0120090J Wolfspeed_C3M0120090J_data_sheet.pdf
C3M0120090J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 5823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+906.03 грн
50+561.41 грн
В кошику  од. на суму  грн.
C3M0120090J-TR Wolfspeed_C3M0120090J_data_sheet.pdf
C3M0120090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+545.20 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0120090J-TR Wolfspeed_C3M0120090J_data_sheet.pdf
C3M0120090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 22A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2756 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+927.40 грн
10+650.55 грн
100+525.01 грн
В кошику  од. на суму  грн.
C3M0120100J Wolfspeed_C3M0120100J_data_sheet.pdf
C3M0120100J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1405.08 грн
50+796.47 грн
100+743.01 грн
500+695.98 грн
В кошику  од. на суму  грн.
C3M0120100J-TR Wolfspeed_C3M0120100J_data_sheet.pdf
C3M0120100J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1359.86 грн
10+922.35 грн
25+821.55 грн
100+679.39 грн
В кошику  од. на суму  грн.
C3M0120100J-TR Wolfspeed_C3M0120100J_data_sheet.pdf
C3M0120100J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
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C3M0120100K Wolfspeed_C3M0120100K_data_sheet.pdf
C3M0120100K
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 22A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
на замовлення 2524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+928.23 грн
30+694.41 грн
В кошику  од. на суму  грн.
C3M0160120D Wolfspeed_C3M0160120D_data_sheet.pdf
C3M0160120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 1897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+606.76 грн
30+407.65 грн
В кошику  од. на суму  грн.
C3M0160120J Wolfspeed_C3M0160120J_data_sheet.pdf
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 17A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 2187 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+767.08 грн
50+461.90 грн
В кошику  од. на суму  грн.
C3M0160120J-TR Wolfspeed_C3M0160120J_data_sheet.pdf
C3M0160120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+909.32 грн
10+608.27 грн
100+457.56 грн
В кошику  од. на суму  грн.
C3M0160120J-TR Wolfspeed_C3M0160120J_data_sheet.pdf
C3M0160120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
товару немає в наявності
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C3M0280090D Wolfspeed_C3M0280090D_data_sheet.pdf
C3M0280090D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 8306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+445.61 грн
30+275.31 грн
В кошику  од. на суму  грн.
C3M0280090J Wolfspeed_C3M0280090J_data_sheet.pdf
C3M0280090J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+701.31 грн
50+371.79 грн
100+342.54 грн
500+284.01 грн
В кошику  од. на суму  грн.
C3M0280090J-TR Wolfspeed_C3M0280090J_data_sheet.pdf
C3M0280090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+322.36 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
C3M0280090J-TR Wolfspeed_C3M0280090J_data_sheet.pdf
C3M0280090J-TR
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
на замовлення 7019 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+719.39 грн
10+474.79 грн
100+351.34 грн
В кошику  од. на суму  грн.
C3M0350120D Wolfspeed_C3M0350120D_data_sheet.pdf
C3M0350120D
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 7.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+631.42 грн
30+299.43 грн
120+288.49 грн
510+251.50 грн
В кошику  од. на суму  грн.
C3M0350120J Wolfspeed_C3M0350120J_data_sheet.pdf
C3M0350120J
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 956 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+631.42 грн
50+332.88 грн
100+306.39 грн
500+251.50 грн
В кошику  од. на суму  грн.
C3M0350120J-TR Wolfspeed_C3M0350120J_data_sheet.pdf
C3M0350120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
товару немає в наявності
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C3M0350120J-TR Wolfspeed_C3M0350120J_data_sheet.pdf
C3M0350120J-TR
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+666.78 грн
10+439.01 грн
100+323.91 грн
В кошику  од. на суму  грн.
C4D02120A Wolfspeed_C4D02120A_data_sheet.pdf
C4D02120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+221.98 грн
50+105.93 грн
100+95.43 грн
500+72.26 грн
1000+66.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E Wolfspeed_C4D02120E_data_sheet.pdf
C4D02120E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 10092 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.52 грн
75+98.08 грн
150+88.71 грн
525+70.76 грн
1050+65.35 грн
2025+61.02 грн
5025+55.18 грн
10050+52.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D02120E-TR Wolfspeed_C4D02120E_data_sheet.pdf
C4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+66.12 грн
5000+59.78 грн
7500+57.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
C4D02120E-TR Wolfspeed_C4D02120E_data_sheet.pdf
C4D02120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 22919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.70 грн
10+136.33 грн
100+93.95 грн
500+71.15 грн
1000+65.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
C4D05120A Wolfspeed_C4D05120A_data_sheet.pdf
C4D05120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+435.75 грн
50+220.24 грн
100+200.95 грн
500+156.88 грн
1000+149.64 грн
В кошику  од. на суму  грн.
C4D05120E Wolfspeed_C4D05120E_data_sheet.pdf
C4D05120E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 2682 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+432.46 грн
75+181.71 грн
150+170.83 грн
525+149.57 грн
1050+142.06 грн
2025+136.83 грн
В кошику  од. на суму  грн.
C4D05120E-TR Wolfspeed_C4D05120E_data_sheet.pdf
C4D05120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
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C4D05120E-TR Wolfspeed_C4D05120E_data_sheet.pdf
C4D05120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 19A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+421.77 грн
10+271.08 грн
100+194.41 грн
В кошику  од. на суму  грн.
C4D08120A Wolfspeed_C4D08120A_data_sheet.pdf
C4D08120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 24.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+568.94 грн
50+279.62 грн
100+266.18 грн
500+219.65 грн
В кошику  од. на суму  грн.
C4D08120E Wolfspeed_C4D08120E_data_sheet.pdf
C4D08120E
Виробник: Wolfspeed, Inc.
Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 808 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+681.58 грн
75+367.18 грн
В кошику  од. на суму  грн.
C4D08120E-TR Wolfspeed_C4D08120E_data_sheet.pdf
C4D08120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
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C4D08120E-TR Wolfspeed_C4D08120E_data_sheet.pdf
C4D08120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
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C4D10120A Wolfspeed_C4D10120A_data_sheet.pdf
C4D10120A
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
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C4D10120D Wolfspeed_C4D10120D_data_sheet.pdf
C4D10120D
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 19A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
товару немає в наявності
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C4D10120E Wolfspeed_C4D10120E_data_sheet.pdf
C4D10120E
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 5146 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+716.11 грн
75+361.86 грн
150+334.95 грн
525+278.47 грн
1050+264.88 грн
В кошику  од. на суму  грн.
C4D10120E-TR Wolfspeed_C4D10120E_data_sheet.pdf
C4D10120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+422.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
C4D10120E-TR Wolfspeed_C4D10120E_data_sheet.pdf
C4D10120E-TR
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 2630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+945.49 грн
10+634.24 грн
100+497.68 грн
В кошику  од. на суму  грн.
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