Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (592) > Сторінка 1 з 10
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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C2D05120A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 17.5A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 455pF @ 0V, 1MHz Current - Average Rectified (Io): 17.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C2D05120E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 17.5A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C2D05120E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 17.5A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| C2D10120A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 31A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 0V, 1MHz Current - Average Rectified (Io): 31A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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C2D10120D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 1200V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C2M0025120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 90A TO247-3Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2788 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 2.4V @ 10mA Power Dissipation (Max): 463W (Tc) |
на замовлення 156 шт: термін постачання 21-31 дні (днів) |
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C2M0040120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 10mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1893 pF @ 1000 V |
на замовлення 1025 шт: термін постачання 21-31 дні (днів) |
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C2M0045170D | Wolfspeed, Inc. |
Description: SICFET N-CH 1700V 72A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 18mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C2M0045170P | Wolfspeed, Inc. |
Description: SICFET N-CH 1700V 72A TO247-4Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4V @ 18mA Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C2M0080120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 36A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
на замовлення 295 шт: термін постачання 21-31 дні (днів) |
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C2M0160120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 19A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 1230 шт: термін постачання 21-31 дні (днів) |
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C2M0280120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 10A TO247-3Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 259 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ) Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 6886 шт: термін постачання 21-31 дні (днів) |
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C2M1000170D | Wolfspeed, Inc. |
Description: SICFET N-CH 1700V 4.9A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C2M1000170J | Wolfspeed, Inc. |
Description: SICFET N-CH 1700V 5.3A D2PAKPackaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V |
на замовлення 814 шт: термін постачання 21-31 дні (днів) |
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C2M1000170J-TR | Wolfspeed, Inc. |
Description: SICFET N-CH 1700V 5.3A D2PAK-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C2M1000170J-TR | Wolfspeed, Inc. |
Description: SICFET N-CH 1700V 5.3A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D02060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 8A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D02060E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 8A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D02060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 8A TO252-2Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 11pF @ 400V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Reverse Recovery Time (trr): 0 ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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C3D02060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 8A TO252-2Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 11pF @ 400V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Reverse Recovery Time (trr): 0 ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D02060F | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 6A TO220-F2Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 4209 шт: термін постачання 21-31 дні (днів) |
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C3D02065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 8A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 3785 шт: термін постачання 21-31 дні (днів) |
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C3D02065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 8A TO2522Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 120pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 370 шт: термін постачання 21-31 дні (днів) |
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C3D02065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 8A TO2522Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 120pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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C3D03060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 11A TO220-2Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 11A Capacitance @ Vr, F: 155pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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C3D03060E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 11A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 155pF @ 0V, 1MHz Current - Average Rectified (Io): 11A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 4085 шт: термін постачання 21-31 дні (днів) |
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C3D03060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 11A TO2522Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 155pF @ 0V, 1MHz Current - Average Rectified (Io): 11A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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C3D03060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 11A TO2522Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 155pF @ 0V, 1MHz Current - Average Rectified (Io): 11A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 1927 шт: термін постачання 21-31 дні (днів) |
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C3D03060F | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 8A TO220-F2Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-F2 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 155pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 11841 шт: термін постачання 21-31 дні (днів) |
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C3D03065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 11A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 155pF @ 0V, 1MHz Current - Average Rectified (Io): 11A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 921 шт: термін постачання 21-31 дні (днів) |
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C3D03065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 11A TO2522Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 11A Capacitance @ Vr, F: 155pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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C3D03065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 11A TO2522Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 11A Capacitance @ Vr, F: 155pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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C3D04060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 13.5A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 4808 шт: термін постачання 21-31 дні (днів) |
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C3D04060E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 13.5A TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 655 шт: термін постачання 21-31 дні (днів) |
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C3D04060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 13.5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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C3D04060E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 13.5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 9221 шт: термін постачання 21-31 дні (днів) |
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C3D04060F | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 9A TO220-F2Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D04065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 13.5A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 1172 шт: термін постачання 21-31 дні (днів) |
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C3D04065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 13.5A TO2522Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 1612 шт: термін постачання 21-31 дні (днів) |
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C3D04065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 13.5A TO2522Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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C3D04065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 13.5A TO2522Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 251pF @ 0V, 1MHz Current - Average Rectified (Io): 13.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 1370 шт: термін постачання 21-31 дні (днів) |
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C3D06060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 19A TO220-2Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 19A Capacitance @ Vr, F: 294pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 14328 шт: термін постачання 21-31 дні (днів) |
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C3D06060F | Wolfspeed, Inc. |
Description: DIODE SIC 600V 11.5A TO220-F2Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 294pF @ 0V, 1MHz Current - Average Rectified (Io): 11.5A Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 13821 шт: термін постачання 21-31 дні (днів) |
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C3D06060G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 19A TO263-2Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 19A Capacitance @ Vr, F: 295pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
на замовлення 6986 шт: термін постачання 21-31 дні (днів) |
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C3D06060G-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 19A TO263-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 0V, 1MHz Current - Average Rectified (Io): 19A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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C3D06060G-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 19A TO263-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 0V, 1MHz Current - Average Rectified (Io): 19A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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C3D06065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 19A TO220-2Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 19A Capacitance @ Vr, F: 294pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 596 шт: термін постачання 21-31 дні (днів) |
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C3D06065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 20A TO252-2Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 1039 шт: термін постачання 21-31 дні (днів) |
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C3D06065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 20A TO252-2Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 295pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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C3D06065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 20A TO252-2Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 295pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2138 шт: термін постачання 21-31 дні (днів) |
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C3D06065I | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 13A TO220-2Packaging: Tube Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 0V, 1MHz Current - Average Rectified (Io): 13A Supplier Device Package: TO-220-2 Isolated Tab Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 1178 шт: термін постачання 21-31 дні (днів) |
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C3D08060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 24A TO220-2Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 24A Capacitance @ Vr, F: 441pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V |
на замовлення 356 шт: термін постачання 21-31 дні (днів) |
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C3D08060G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 24A TO263-2Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 441pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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C3D08060G-TR | Wolfspeed, Inc. |
Description: DIODE SCHOTTKY 600V 24A TO263-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 26pF @ 400V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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C3D08060G-TR | Wolfspeed, Inc. |
Description: DIODE SCHOTTKY 600V 24A TO263-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 26pF @ 400V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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C3D08065A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 24A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 441pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 597 шт: термін постачання 21-31 дні (днів) |
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C3D08065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 25.5A TO2522Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 395pF @ 0V, 1MHz Current - Average Rectified (Io): 25.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 411 шт: термін постачання 21-31 дні (днів) |
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C3D08065E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 25.5A TO252Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 25.5A Capacitance @ Vr, F: 395pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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C3D08065I | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 16.5A TO220Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Isolated Tab Current - Average Rectified (Io): 16.5A Capacitance @ Vr, F: 441pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Packaging: Tube Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V |
на замовлення 601 шт: термін постачання 21-31 дні (днів) |
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C3D10060A | Wolfspeed, Inc. |
Description: DIODE SIL CARB 600V 30A TO220-2Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 30A Capacitance @ Vr, F: 480pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 4799 шт: термін постачання 21-31 дні (днів) |
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| C2D05120A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 17.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 455pF @ 0V, 1MHz
Current - Average Rectified (Io): 17.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 17.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 455pF @ 0V, 1MHz
Current - Average Rectified (Io): 17.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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| C2D05120E |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 17.5A TO252
Description: DIODE SIL CARB 1.2KV 17.5A TO252
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| C2D05120E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 17.5A TO252
Description: DIODE SIL CARB 1.2KV 17.5A TO252
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| C2D10120A |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 31A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 0V, 1MHz
Current - Average Rectified (Io): 31A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 31A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 0V, 1MHz
Current - Average Rectified (Io): 31A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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| C2D10120D |
Виробник: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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| C2M0025120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 90A TO247-3
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2788 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 463W (Tc)
Description: SICFET N-CH 1200V 90A TO247-3
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2788 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 463W (Tc)
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6682.80 грн |
| 30+ | 5023.42 грн |
| C2M0040120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1893 pF @ 1000 V
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1893 pF @ 1000 V
на замовлення 1025 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3731.18 грн |
| 30+ | 2474.05 грн |
| C2M0045170D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 72A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
Description: SICFET N-CH 1700V 72A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
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| C2M0045170P |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 72A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 18mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1700V 72A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 18mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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| C2M0080120D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 36A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: SICFET N-CH 1200V 36A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2217.01 грн |
| 30+ | 1389.66 грн |
| 120+ | 1342.33 грн |
| C2M0160120D |
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Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 19A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 19A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1277.05 грн |
| 30+ | 762.82 грн |
| 120+ | 666.97 грн |
| C2M0280120D |
![]() |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 10A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 259 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: SICFET N-CH 1200V 10A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 259 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 6886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 862.47 грн |
| 30+ | 498.34 грн |
| 120+ | 425.46 грн |
| 510+ | 349.21 грн |
| 1020+ | 343.00 грн |
| C2M1000170D |
![]() |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 4.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V
Description: SICFET N-CH 1700V 4.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V
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од. на суму грн.
| C2M1000170J |
![]() |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 5.3A D2PAK
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Description: SICFET N-CH 1700V 5.3A D2PAK
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
на замовлення 814 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 901.99 грн |
| 50+ | 493.57 грн |
| 100+ | 457.51 грн |
| 500+ | 377.21 грн |
| C2M1000170J-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 5.3A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Description: SICFET N-CH 1700V 5.3A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
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| C2M1000170J-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 5.3A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Description: SICFET N-CH 1700V 5.3A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 8A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 8A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARB 600V 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| C3D02060E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARB 600V 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
товару немає в наявності
В кошику
од. на суму грн.
| C3D02060F |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 6A TO220-F2
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 6A TO220-F2
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 4209 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.86 грн |
| 50+ | 74.13 грн |
| 100+ | 66.46 грн |
| 500+ | 49.75 грн |
| 1000+ | 45.69 грн |
| 2000+ | 42.28 грн |
| C3D02065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 8A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 3785 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.83 грн |
| 75+ | 72.88 грн |
| 150+ | 65.67 грн |
| 525+ | 51.99 грн |
| 1050+ | 47.81 грн |
| 2025+ | 44.47 грн |
| C3D02065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 8A TO2522
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 8A TO2522
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.89 грн |
| 10+ | 74.02 грн |
| 100+ | 49.50 грн |
| C3D02065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 8A TO2522
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARBIDE 650V 8A TO2522
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| C3D03060A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 11A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 11A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 600V 11A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 11A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.65 грн |
| 50+ | 102.63 грн |
| 100+ | 92.54 грн |
| C3D03060E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 11A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 11A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 4085 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.28 грн |
| 75+ | 72.08 грн |
| 150+ | 64.93 грн |
| 525+ | 51.38 грн |
| 1050+ | 47.25 грн |
| 2025+ | 43.94 грн |
| C3D03060E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 11A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 11A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| C3D03060E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 11A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 11A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 1927 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 154.98 грн |
| 10+ | 95.59 грн |
| 100+ | 64.76 грн |
| 500+ | 48.38 грн |
| 1000+ | 44.39 грн |
| C3D03060F |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 8A TO220-F2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-F2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE SIL CARB 600V 8A TO220-F2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-F2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 11841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.15 грн |
| 50+ | 60.80 грн |
| C3D03065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 11A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 11A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 921 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.95 грн |
| 75+ | 101.19 грн |
| 150+ | 91.69 грн |
| 525+ | 73.36 грн |
| C3D03065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 11A TO2522
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 11A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Description: DIODE SIL CARB 650V 11A TO2522
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 11A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.41 грн |
| 10+ | 98.80 грн |
| 100+ | 67.04 грн |
| 500+ | 50.15 грн |
| 1000+ | 46.04 грн |
| C3D03065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 11A TO2522
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 11A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Description: DIODE SIL CARB 650V 11A TO2522
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 11A
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| C3D04060A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 13.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 13.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 4808 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.40 грн |
| 50+ | 90.54 грн |
| 100+ | 81.47 грн |
| 500+ | 61.51 грн |
| 1000+ | 56.71 грн |
| 2000+ | 52.67 грн |
| C3D04060E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 13.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 13.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 655 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.53 грн |
| 75+ | 83.63 грн |
| 150+ | 75.53 грн |
| 525+ | 60.07 грн |
| C3D04060E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 13.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 13.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 55.96 грн |
| 5000+ | 50.52 грн |
| 7500+ | 48.80 грн |
| C3D04060E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 13.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 13.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 9221 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.58 грн |
| 10+ | 108.20 грн |
| 100+ | 74.17 грн |
| 500+ | 55.99 грн |
| C3D04060F |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 9A TO220-F2
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 9A TO220-F2
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| C3D04065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 13.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 13.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1172 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.87 грн |
| 50+ | 135.02 грн |
| 100+ | 122.33 грн |
| 500+ | 93.92 грн |
| 1000+ | 87.22 грн |
| C3D04065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1612 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.63 грн |
| 75+ | 85.16 грн |
| 150+ | 76.97 грн |
| 525+ | 61.29 грн |
| 1050+ | 56.56 грн |
| C3D04065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| C3D04065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 13.5A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Current - Average Rectified (Io): 13.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 1370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.70 грн |
| 10+ | 124.84 грн |
| 100+ | 85.78 грн |
| 500+ | 64.82 грн |
| 1000+ | 59.78 грн |
| C3D06060A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 19A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 600V 19A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 14328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.17 грн |
| 50+ | 123.35 грн |
| 100+ | 111.58 грн |
| 500+ | 85.35 грн |
| 1000+ | 79.13 грн |
| 2000+ | 73.90 грн |
| 5000+ | 67.86 грн |
| C3D06060F |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIC 600V 11.5A TO220-F2
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIC 600V 11.5A TO220-F2
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 13821 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.17 грн |
| 50+ | 123.35 грн |
| 100+ | 111.58 грн |
| 500+ | 85.35 грн |
| 1000+ | 79.13 грн |
| 2000+ | 73.90 грн |
| 5000+ | 67.86 грн |
| C3D06060G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 19A TO263-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE SIL CARB 600V 19A TO263-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 6986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.49 грн |
| 50+ | 143.66 грн |
| 100+ | 130.80 грн |
| 500+ | 111.59 грн |
| C3D06060G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 19A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 19A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.75 грн |
| 10+ | 156.26 грн |
| 100+ | 109.04 грн |
| C3D06060G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 19A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 19A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 87.55 грн |
| 1600+ | 78.52 грн |
| 2400+ | 77.08 грн |
| C3D06065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 19A TO220-2
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 19A TO220-2
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 596 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.92 грн |
| 50+ | 127.62 грн |
| 100+ | 115.51 грн |
| 500+ | 88.48 грн |
| C3D06065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 20A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1039 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 373.51 грн |
| 75+ | 177.67 грн |
| 150+ | 162.61 грн |
| 525+ | 132.52 грн |
| C3D06065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 20A TO252-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 20A TO252-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| C3D06065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 20A TO252-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 650V 20A TO252-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2138 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.32 грн |
| 10+ | 152.97 грн |
| 100+ | 106.95 грн |
| 500+ | 88.12 грн |
| C3D06065I |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 313.06 грн |
| 50+ | 154.69 грн |
| 100+ | 140.49 грн |
| 500+ | 108.49 грн |
| 1000+ | 100.98 грн |
| C3D08060A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 24A TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE SIL CARB 600V 24A TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
на замовлення 356 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 316.16 грн |
| 50+ | 132.68 грн |
| 100+ | 127.15 грн |
| C3D08060G |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 24A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 24A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| C3D08060G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SCHOTTKY 600V 24A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SCHOTTKY 600V 24A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 238.01 грн |
| C3D08060G-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SCHOTTKY 600V 24A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SCHOTTKY 600V 24A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 393.65 грн |
| 10+ | 318.71 грн |
| 100+ | 257.84 грн |
| C3D08065A |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 323.14 грн |
| 50+ | 160.52 грн |
| 100+ | 145.91 грн |
| 500+ | 112.88 грн |
| C3D08065E |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 25.5A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 25.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 25.5A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 25.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 411 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 342.51 грн |
| 75+ | 161.23 грн |
| 150+ | 147.31 грн |
| C3D08065E-TR |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 25.5A TO252
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 25.5A
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 25.5A TO252
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 25.5A
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| C3D08065I |
![]() |
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16.5A TO220
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2 Isolated Tab
Current - Average Rectified (Io): 16.5A
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIL CARB 650V 16.5A TO220
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2 Isolated Tab
Current - Average Rectified (Io): 16.5A
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
на замовлення 601 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 444.02 грн |
| 10+ | 358.70 грн |
| 100+ | 290.19 грн |
| 500+ | 242.07 грн |
| C3D10060A |
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Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 30A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 600V 30A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 4799 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 370.41 грн |
| 50+ | 185.79 грн |
| 100+ | 169.28 грн |
| 500+ | 131.71 грн |
| 1000+ | 123.00 грн |
| 2000+ | 115.68 грн |




















