Продукція > WOLFSPEED, INC. > Всі товари виробника WOLFSPEED, INC. (626) > Сторінка 6 з 11
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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CAB760M12HM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 1015A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1015A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Supplier Device Package: Module Part Status: Active |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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CAB760M12HM3R | Wolfspeed, Inc. |
Description: 760A 1200V SIC HALF-BRIDGE MODULPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 50mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Supplier Device Package: Module Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAB7R5A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAB7R5A23GM4T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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CAR600M12HN6 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 908A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 908A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V Supplier Device Package: Module |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS120M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 193A MODULE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS175M12BM3 | Wolfspeed, Inc. |
Description: 175A 1200V SIC HALF-BRIDGE MODULPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 43mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS300M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 423A MODULEPackaging: Bulk Package / Case: Module, Screw Terminals Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1660W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 423A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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| CAS300M12BM2T | Wolfspeed, Inc. |
Description: SIC, MODULE, 300A, 1200V, 62MM,Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CAS300M17BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 325A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1760W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 325A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS310M17BM3 | Wolfspeed, Inc. |
Description: SIC 1700V 310APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 310A Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| CAS325M12HM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 444A MODULE Packaging: Bulk Package / Case: Module Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3000W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 444A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V Vgs(th) (Max) @ Id: 4V @ 105mA Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CAS350M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 417APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 85mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS380M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 532A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 532A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 152mA Supplier Device Package: Module Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CAS480M12HM3 | Wolfspeed, Inc. |
Description: 1.2 KV, 480A HIGH PERFORMANCE SI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CAS530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 630APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CAS530M12BM3T | Wolfspeed, Inc. |
Description: SIC, MODULE, 530A, 1200V, 62MM,Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2000W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 645A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||
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CBB011M12GM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 11M, 1200V, 48 MM, |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CBB011M12GM4T | Wolfspeed, Inc. |
Description: SIC, MODULE, 11M, 1200V, 48 MM,Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 292W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V Vgs(th) (Max) @ Id: 4V @ 28mA |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CBB017M12FM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 17 M, 1200 V, 33.8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 168W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Vgs(th) (Max) @ Id: 4V @ 19mA |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CBB017M12FM4T | Wolfspeed, Inc. |
Description: SIC, MODULE, 17 M, 1200 V, 33.8 |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 105APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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CBB021M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 50APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 17mA |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 4N-CH 1200V 40APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CBB032M12FM3T | Wolfspeed, Inc. |
Description: SIC 4N-CH 1200V 39APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.9V @ 11mA Part Status: Active |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 50A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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CCB016M12GM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 50A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Supplier Device Package: Module |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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CCB021M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 51APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Part Status: Active |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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CCB021M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 51A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: Module Part Status: Active |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CCB032M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 40APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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CCB032M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 40A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: Module |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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CCS020M12CM2 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 29.5A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 167W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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CCS050M12CM2 | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 87A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 337W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA Supplier Device Package: Module Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| CG2H40120F-AMP | Wolfspeed, Inc. |
Description: CG2H40120F DEV BOARD WITH HEMTPackaging: Box For Use With/Related Products: CG2H40120F Frequency: 0Hz ~ 2.5GHz Type: HEMT Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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CGD1200HB2P-BM2 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGD1200HB2PPackaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CGD1200HB2P, CGD12HB00D Supplied Contents: Board(s) Primary Attributes: Dual Channel, Isolated Embedded: No |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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CGD1200HB2P-BM3 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGD1200HB2PPackaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CGD1200HB2P Supplied Contents: Board(s) Primary Attributes: Isolated Secondary Attributes: On-Board LEDs Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CGD12HB00D | Wolfspeed, Inc. |
Description: 2CH DIFF TRANSCEIVER COMP TOOLPackaging: Box For Use With/Related Products: CGD12HBXMP, CGD15HB62LP Accessory Type: Interface Board Utilized IC / Part: CGD12HBXMP, CGD15HB62LP |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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CGD12HBXMP | Wolfspeed, Inc. |
Description: EVAL BOARD FOR ADUM4135Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: ADuM4135 Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
на замовлення 207 шт: термін постачання 21-31 дні (днів) |
|
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| CGD15HB62LP | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAS325M12HM2 Packaging: Box Function: Gate Driver Type: Power Management Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included Utilized IC / Part: CAS325M12HM2 Supplied Contents: Partially Populated Board(s) - Main IC Not Included Primary Attributes: 2-Channel (Dual) |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||
| CGD15HB62P | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAS300M12BM2Packaging: Box Function: Gate Driver Type: Power Management Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included Utilized IC / Part: CAS300M12BM2 Primary Attributes: Isolated Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| CGD15HB62P1 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAS120M12BM2 Packaging: Box Function: Gate Driver Type: Power Management Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included Utilized IC / Part: CAS120M12BM2, CAS300M12BM2 Supplied Contents: Partially Populated Board(s) - Main IC Not Included Primary Attributes: Isolated Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
CGD15SG00D2 | Wolfspeed, Inc. |
Description: SIC MOSFET ISOLATED GATE DRIVER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CGD1700HB2M-UNA | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGD12HB00DPackaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CGD12HB00D, UCC21710 Supplied Contents: Board(s) Embedded: No |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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CGD1700HB2M-UNA-R1 | Wolfspeed, Inc. |
Description: UCC21710 - GATE DRIVER POWER MANPackaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CGD1700HB2M-UNA-R2 | Wolfspeed, Inc. |
Description: UCC21710 - GATE DRIVER POWER MANPackaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CGD1700HB2P-BM2 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CAS300M17BM2Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CAS300M17BM2 Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Embedded: No Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
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CGD1700HB2P-BM3 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGD1700Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CGD1700 Primary Attributes: Isolated Secondary Attributes: On-Board LEDs Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
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|
CGD1700HB2P-XM3 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGD1700Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: CGD1700 Primary Attributes: Isolated Secondary Attributes: On-Board LEDs Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
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|
CGD1700HB3P-HM3 | Wolfspeed, Inc. |
Description: GATE DRIVER, FOR 1.2KV, HM3 HIGHPackaging: Box Contents: Board(s) |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
|
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| CGH21120F-AMP | Wolfspeed, Inc. |
Description: CGH21120F DEV BOARD WITH HEMTPackaging: Box For Use With/Related Products: CGH21120F Frequency: 1.8GHz ~ 2.3GHz Type: HEMT Supplied Contents: Board(s) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| CGH21240F-AMP | Wolfspeed, Inc. |
Description: CGH21240F DEV BOARD WITH HEMTPackaging: Box For Use With/Related Products: CGH21240F Frequency: 1.8GHz ~ 2.3GHz Type: HEMT Supplied Contents: Board(s) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||||||
|
CGH35030F | Wolfspeed, Inc. |
Description: 30W GAN HEMT 28V 6.0GHZ FLANGE |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
|
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|
CGH40006P-TB | Wolfspeed, Inc. |
Description: BOARD DEMO AMP CIRCUIT CGH40006PPackaging: Bulk For Use With/Related Products: CGH40006P Frequency: 0Hz ~ 6GHz Type: HEMT Supplied Contents: Partially Populated Board - Main IC Not Included Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CGH40010F-TB | Wolfspeed, Inc. |
Description: BOARD DEMO AMP CIRCUIT CGH40010 Packaging: Bulk For Use With/Related Products: CGH40010F Frequency: 0Hz ~ 6GHz Type: HEMT Supplied Contents: Partially Populated Board - Main IC Not Included Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CGH40045F-TB | Wolfspeed, Inc. |
Description: BOARD DEMO AMP CIRCUIT CGH40045 Packaging: Bulk For Use With/Related Products: CGH40045F Frequency: 0Hz ~ 4GHz Type: HEMT Supplied Contents: Partially Populated Board - Main IC Not Included Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CGH55015F1 | Wolfspeed, Inc. |
Description: RF MOSFET HEMT 28V 440196Packaging: Tray Package / Case: 440196 Current Rating (Amps): 1.5A Frequency: 5.5GHz ~ 5.8GHz Power - Output: 15W Gain: 11dB Technology: HEMT Supplier Device Package: 440196 Part Status: Obsolete Voltage - Rated: 84 V Voltage - Test: 28 V Current - Test: 115 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
CGHV27060MP | Wolfspeed, Inc. |
Description: RF MOSFET HEMT 50V 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Current Rating (Amps): 6.3A Mounting Type: Surface Mount Frequency: 2.7GHz Power - Output: 80W Gain: 16.5dB Technology: HEMT Supplier Device Package: 20-TSSOP Part Status: Active Voltage - Rated: 150 V Voltage - Test: 50 V Current - Test: 125 mA |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
|
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|
CGHV27060MP | Wolfspeed, Inc. |
Description: RF MOSFET HEMT 50V 20TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Current Rating (Amps): 6.3A Mounting Type: Surface Mount Frequency: 2.7GHz Power - Output: 80W Gain: 16.5dB Technology: HEMT Supplier Device Package: 20-TSSOP Part Status: Active Voltage - Rated: 150 V Voltage - Test: 50 V Current - Test: 125 mA |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||
| CGHV27060MP-AMP1 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGHV27060Packaging: Bulk For Use With/Related Products: CGHV27060 Frequency: 2.5GHz ~ 2.7GHz Type: HEMT Supplied Contents: Board(s) Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
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|
CGHV27060MP-AMP3 | Wolfspeed, Inc. |
Description: EVAL BOARD FOR CGHV27060Packaging: Bulk For Use With/Related Products: CGHV27060 Frequency: 800MHz ~ 2.7GHz Type: HEMT Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
| CAB760M12HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 205011.68 грн |
| CAB760M12HM3R |
![]() |
Виробник: Wolfspeed, Inc.
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 224301.89 грн |
| CAB7R5A23GM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
товару немає в наявності
В кошику
од. на суму грн.
| CAB7R5A23GM4T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18654.85 грн |
| CAR600M12HN6 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 168931.38 грн |
| CAS120M12BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 193A MODULE
Description: MOSFET 2N-CH 1200V 193A MODULE
товару немає в наявності
В кошику
од. на суму грн.
| CAS175M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| CAS300M12BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 69433.82 грн |
| CAS300M17BM2 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| CAS310M17BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 1700V 310A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 310A
Part Status: Active
Description: SIC 1700V 310A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 310A
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| CAS325M12HM2 |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 444A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3000W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 444A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3000W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
| CAS350M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| CAS380M17HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 249256.40 грн |
| CAS480M12HM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
товару немає в наявності
В кошику
од. на суму грн.
| CAS530M12BM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 39283.41 грн |
| CAS530M12BM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| CBB011M12GM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 11M, 1200V, 48 MM,
Description: SIC, MODULE, 11M, 1200V, 48 MM,
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15938.41 грн |
| 18+ | 13420.26 грн |
| CBB011M12GM4T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 11M, 1200V, 48 MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 292W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 28mA
Description: SIC, MODULE, 11M, 1200V, 48 MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 292W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 28mA
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16157.89 грн |
| 18+ | 13765.23 грн |
| CBB017M12FM4 |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10296.39 грн |
| 18+ | 8174.09 грн |
| CBB017M12FM4T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Description: SIC, MODULE, 17 M, 1200 V, 33.8
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10571.53 грн |
| 18+ | 8432.23 грн |
| CBB021M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Description: MOSFET 4N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7731.83 грн |
| 18+ | 6301.81 грн |
| CBB021M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
Description: MOSFET 4N-CH 1200V 50A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 17mA
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8797.42 грн |
| 18+ | 6928.03 грн |
| CBB032M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10416.47 грн |
| 18+ | 8796.73 грн |
| CBB032M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
Description: SIC 4N-CH 1200V 39A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10862.58 грн |
| 18+ | 9682.63 грн |
| CCB016M12GM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14563.49 грн |
| 18+ | 12224.01 грн |
| CCB016M12GM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 50A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Supplier Device Package: Module
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14366.28 грн |
| 18+ | 12035.68 грн |
| CCB021M12FM3 |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Part Status: Active
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10431.57 грн |
| 18+ | 8301.12 грн |
| CCB021M12FM3T |
![]() |
Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10798.16 грн |
| 18+ | 8645.28 грн |
| CCB032M12FM3 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 6N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13073.26 грн |
| 18+ | 11498.67 грн |
| CCB032M12FM3T |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 40A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: Module
Description: MOSFET 6N-CH 1200V 40A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: Module
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13590.15 грн |
| 18+ | 12023.09 грн |
| CCS020M12CM2 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 29.5A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 167W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 6N-CH 1200V 29.5A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 167W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27098.39 грн |
| 10+ | 24991.83 грн |
| 25+ | 24440.56 грн |
| CCS050M12CM2 |
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Виробник: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 87A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 337W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 6N-CH 1200V 87A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 337W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 800V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
Supplier Device Package: Module
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| CG2H40120F-AMP |
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Виробник: Wolfspeed, Inc.
Description: CG2H40120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CG2H40120F
Frequency: 0Hz ~ 2.5GHz
Type: HEMT
Supplied Contents: Board(s)
Description: CG2H40120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CG2H40120F
Frequency: 0Hz ~ 2.5GHz
Type: HEMT
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| CGD1200HB2P-BM2 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1200HB2P, CGD12HB00D
Supplied Contents: Board(s)
Primary Attributes: Dual Channel, Isolated
Embedded: No
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1200HB2P, CGD12HB00D
Supplied Contents: Board(s)
Primary Attributes: Dual Channel, Isolated
Embedded: No
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19430.97 грн |
| CGD1200HB2P-BM3 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1200HB2P
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
Description: EVAL BOARD FOR CGD1200HB2P
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1200HB2P
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
товару немає в наявності
В кошику
од. на суму грн.
| CGD12HB00D |
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Виробник: Wolfspeed, Inc.
Description: 2CH DIFF TRANSCEIVER COMP TOOL
Packaging: Box
For Use With/Related Products: CGD12HBXMP, CGD15HB62LP
Accessory Type: Interface Board
Utilized IC / Part: CGD12HBXMP, CGD15HB62LP
Description: 2CH DIFF TRANSCEIVER COMP TOOL
Packaging: Box
For Use With/Related Products: CGD12HBXMP, CGD15HB62LP
Accessory Type: Interface Board
Utilized IC / Part: CGD12HBXMP, CGD15HB62LP
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6533.45 грн |
| CGD12HBXMP |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR ADUM4135
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ADuM4135
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: EVAL BOARD FOR ADUM4135
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ADuM4135
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25786.30 грн |
| 10+ | 24792.42 грн |
| CGD15HB62LP |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAS325M12HM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS325M12HM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: 2-Channel (Dual)
Description: EVAL BOARD FOR CAS325M12HM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS325M12HM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: 2-Channel (Dual)
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| CGD15HB62P |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAS300M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS300M12BM2
Primary Attributes: Isolated
Embedded: No
Description: EVAL BOARD FOR CAS300M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS300M12BM2
Primary Attributes: Isolated
Embedded: No
товару немає в наявності
В кошику
од. на суму грн.
| CGD15HB62P1 |
Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAS120M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS120M12BM2, CAS300M12BM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: Isolated
Part Status: Obsolete
Description: EVAL BOARD FOR CAS120M12BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Partially Populated Board(s) - Main IC/Module/Part Not Included
Utilized IC / Part: CAS120M12BM2, CAS300M12BM2
Supplied Contents: Partially Populated Board(s) - Main IC Not Included
Primary Attributes: Isolated
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CGD15SG00D2 |
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Виробник: Wolfspeed, Inc.
Description: SIC MOSFET ISOLATED GATE DRIVER
Description: SIC MOSFET ISOLATED GATE DRIVER
товару немає в наявності
В кошику
од. на суму грн.
| CGD1700HB2M-UNA |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGD12HB00D
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD12HB00D, UCC21710
Supplied Contents: Board(s)
Embedded: No
Description: EVAL BOARD FOR CGD12HB00D
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD12HB00D, UCC21710
Supplied Contents: Board(s)
Embedded: No
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20238.11 грн |
| 10+ | 19443.60 грн |
| 25+ | 19425.82 грн |
| CGD1700HB2P-BM2 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CAS300M17BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAS300M17BM2
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR CAS300M17BM2
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAS300M17BM2
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19675.10 грн |
| CGD1700HB2P-BM3 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGD1700
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1700
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
Description: EVAL BOARD FOR CGD1700
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1700
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20294.57 грн |
| CGD1700HB2P-XM3 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGD1700
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1700
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
Description: EVAL BOARD FOR CGD1700
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CGD1700
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25858.66 грн |
| CGD1700HB3P-HM3 |
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Виробник: Wolfspeed, Inc.
Description: GATE DRIVER, FOR 1.2KV, HM3 HIGH
Packaging: Box
Contents: Board(s)
Description: GATE DRIVER, FOR 1.2KV, HM3 HIGH
Packaging: Box
Contents: Board(s)
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 33911.76 грн |
| CGH21120F-AMP |
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Виробник: Wolfspeed, Inc.
Description: CGH21120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CGH21120F
Frequency: 1.8GHz ~ 2.3GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Obsolete
Description: CGH21120F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CGH21120F
Frequency: 1.8GHz ~ 2.3GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| CGH21240F-AMP |
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Виробник: Wolfspeed, Inc.
Description: CGH21240F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CGH21240F
Frequency: 1.8GHz ~ 2.3GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Active
Description: CGH21240F DEV BOARD WITH HEMT
Packaging: Box
For Use With/Related Products: CGH21240F
Frequency: 1.8GHz ~ 2.3GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| CGH35030F |
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Виробник: Wolfspeed, Inc.
Description: 30W GAN HEMT 28V 6.0GHZ FLANGE
Description: 30W GAN HEMT 28V 6.0GHZ FLANGE
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8670.98 грн |
| 10+ | 7919.24 грн |
| CGH40006P-TB |
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Виробник: Wolfspeed, Inc.
Description: BOARD DEMO AMP CIRCUIT CGH40006P
Packaging: Bulk
For Use With/Related Products: CGH40006P
Frequency: 0Hz ~ 6GHz
Type: HEMT
Supplied Contents: Partially Populated Board - Main IC Not Included
Part Status: Discontinued at Digi-Key
Description: BOARD DEMO AMP CIRCUIT CGH40006P
Packaging: Bulk
For Use With/Related Products: CGH40006P
Frequency: 0Hz ~ 6GHz
Type: HEMT
Supplied Contents: Partially Populated Board - Main IC Not Included
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| CGH40010F-TB |
Виробник: Wolfspeed, Inc.
Description: BOARD DEMO AMP CIRCUIT CGH40010
Packaging: Bulk
For Use With/Related Products: CGH40010F
Frequency: 0Hz ~ 6GHz
Type: HEMT
Supplied Contents: Partially Populated Board - Main IC Not Included
Part Status: Discontinued at Digi-Key
Description: BOARD DEMO AMP CIRCUIT CGH40010
Packaging: Bulk
For Use With/Related Products: CGH40010F
Frequency: 0Hz ~ 6GHz
Type: HEMT
Supplied Contents: Partially Populated Board - Main IC Not Included
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| CGH40045F-TB |
Виробник: Wolfspeed, Inc.
Description: BOARD DEMO AMP CIRCUIT CGH40045
Packaging: Bulk
For Use With/Related Products: CGH40045F
Frequency: 0Hz ~ 4GHz
Type: HEMT
Supplied Contents: Partially Populated Board - Main IC Not Included
Part Status: Discontinued at Digi-Key
Description: BOARD DEMO AMP CIRCUIT CGH40045
Packaging: Bulk
For Use With/Related Products: CGH40045F
Frequency: 0Hz ~ 4GHz
Type: HEMT
Supplied Contents: Partially Populated Board - Main IC Not Included
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| CGH55015F1 |
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Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT 28V 440196
Packaging: Tray
Package / Case: 440196
Current Rating (Amps): 1.5A
Frequency: 5.5GHz ~ 5.8GHz
Power - Output: 15W
Gain: 11dB
Technology: HEMT
Supplier Device Package: 440196
Part Status: Obsolete
Voltage - Rated: 84 V
Voltage - Test: 28 V
Current - Test: 115 mA
Description: RF MOSFET HEMT 28V 440196
Packaging: Tray
Package / Case: 440196
Current Rating (Amps): 1.5A
Frequency: 5.5GHz ~ 5.8GHz
Power - Output: 15W
Gain: 11dB
Technology: HEMT
Supplier Device Package: 440196
Part Status: Obsolete
Voltage - Rated: 84 V
Voltage - Test: 28 V
Current - Test: 115 mA
товару немає в наявності
В кошику
од. на суму грн.
| CGHV27060MP |
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Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT 50V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Current Rating (Amps): 6.3A
Mounting Type: Surface Mount
Frequency: 2.7GHz
Power - Output: 80W
Gain: 16.5dB
Technology: HEMT
Supplier Device Package: 20-TSSOP
Part Status: Active
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 125 mA
Description: RF MOSFET HEMT 50V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Current Rating (Amps): 6.3A
Mounting Type: Surface Mount
Frequency: 2.7GHz
Power - Output: 80W
Gain: 16.5dB
Technology: HEMT
Supplier Device Package: 20-TSSOP
Part Status: Active
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 125 mA
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10427.60 грн |
| 10+ | 9566.31 грн |
| 25+ | 9362.78 грн |
| CGHV27060MP |
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Виробник: Wolfspeed, Inc.
Description: RF MOSFET HEMT 50V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Current Rating (Amps): 6.3A
Mounting Type: Surface Mount
Frequency: 2.7GHz
Power - Output: 80W
Gain: 16.5dB
Technology: HEMT
Supplier Device Package: 20-TSSOP
Part Status: Active
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 125 mA
Description: RF MOSFET HEMT 50V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Current Rating (Amps): 6.3A
Mounting Type: Surface Mount
Frequency: 2.7GHz
Power - Output: 80W
Gain: 16.5dB
Technology: HEMT
Supplier Device Package: 20-TSSOP
Part Status: Active
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 125 mA
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| CGHV27060MP-AMP1 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGHV27060
Packaging: Bulk
For Use With/Related Products: CGHV27060
Frequency: 2.5GHz ~ 2.7GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR CGHV27060
Packaging: Bulk
For Use With/Related Products: CGHV27060
Frequency: 2.5GHz ~ 2.7GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 64483.64 грн |
| CGHV27060MP-AMP3 |
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Виробник: Wolfspeed, Inc.
Description: EVAL BOARD FOR CGHV27060
Packaging: Bulk
For Use With/Related Products: CGHV27060
Frequency: 800MHz ~ 2.7GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR CGHV27060
Packaging: Bulk
For Use With/Related Products: CGHV27060
Frequency: 800MHz ~ 2.7GHz
Type: HEMT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 64483.64 грн |

































