Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3603) > Сторінка 8 з 61
Фото | Назва | Виробник | Інформація |
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AS4C1G8D3LA-10BANTR | Alliance Memory | DRAM DDR3L, 8G, 1G X 8, 1.35V, 78-ball FBGA, 1866 Mhz, Automotive Temp - Tape & Reel |
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AS4C1G8D3LA-10BCN | Alliance Memory | DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET |
на замовлення 461 шт: термін постачання 21-30 дні (днів) |
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AS4C1G8D3LA-10BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C1G8D3LA-10BCN - DRAM, DDR3L, 8 Gbit, 1G x 8 Bit, 933 MHz, FBGA, 78 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.35V Taktfrequenz, max.: 933MHz Anzahl der Pins: 78Pin(s) euEccn: NLR Speicherdichte: 8Gbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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AS4C1G8D3LA-10BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Memory capacity: 8Gb Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C1G8D3LA-10BCNTR | Alliance Memory | DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET |
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AS4C1G8D3LA-10BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2000 шт |
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AS4C1G8D3LA-10BIN | Alliance Memory | DRAM DDR3L, 8G, 1G X 8, 1.35V, 78-ball FBGA, 933 Mhz, Industrial Temp - Tray |
на замовлення 768 шт: термін постачання 21-30 дні (днів) |
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AS4C1G8D3LA-10BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C1G8D3LA-10BINTR | Alliance Memory | DRAM 8G 1Gx8 933MHz 1.35V DDR3 IT |
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AS4C1G8D3LA-10BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA78 Memory capacity: 8Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C1G8D3LA-12BCN | Alliance Memory | DRAM 8G 1Gx8 800MHz 1.35V DDR3 ET |
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AS4C1G8D3LA-12BCNTR | Alliance Memory | DRAM 8G 1Gx8 800MHz 1.35V DDR3 ET |
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AS4C1G8D3LA-12BIN | Alliance Memory | DRAM 8G 1Gx8 800MHz 1.35V DDR3 IT |
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AS4C1G8D3LA-12BINTR | Alliance Memory | DRAM 8G 1Gx8 800MHz 1.35V DDR3 IT |
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AS4C1G8D4-75BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: 0...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: in-tray Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory |
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AS4C1G8D4-75BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: 0...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: reel Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory |
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AS4C1G8D4-75BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: -40...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: in-tray Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory |
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AS4C1G8D4-75BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: -40...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: reel Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory |
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AS4C1G8D4-75BCN | Alliance Memory | DRAM SDRAM - DDR4 |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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AS4C1G8D4-75BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: 0...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: in-tray Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory кількість в упаковці: 209 шт |
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AS4C1G8D4-75BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: 0...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: reel Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
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AS4C1G8D4-75BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: -40...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: in-tray Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory кількість в упаковці: 209 шт |
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AS4C1G8D4-75BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Kind of memory: DDR4; SDRAM Memory: 8Gb DRAM Operating temperature: -40...95°C Operating voltage: 1.2V Clock frequency: 1333MHz Memory organisation: 1Gx8bit Kind of package: reel Case: FBGA78 Mounting: SMD Access time: 14.25ns Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
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AS4C1G8D4A-62BCNTR | Alliance Memory | DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Commercial Temp, Rev.A - Reel |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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AS4C1G8D4A-62BINTR | Alliance Memory | DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Industrial Temp, Rev.A - Reel |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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AS4C1G8MD3L-12BCN | Alliance Memory | DRAM DDR3, 8GB. 1.35V 800MHz,1G x 8 |
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AS4C1G8MD3L-12BCNTR | Alliance Memory | DRAM DDR3, 8GB. 1.35V 800MHz,1G x 8 |
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AS4C1M16S-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 111 шт: термін постачання 21-30 дні (днів) |
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AS4C1M16S-6TCNR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C1M16S-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C1M16S-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bit Access time: 5.4ns Clock frequency: 166MHz Kind of package: in-tray Kind of interface: parallel Memory: 16Mb DRAM Case: TSOP50 II |
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AS4C1M16S-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C1M16S-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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AS4C1M16S-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C1M16S-6TCN | Alliance Memory | DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Commercial Temp - Tray |
на замовлення 780 шт: термін постачання 21-30 дні (днів) |
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AS4C1M16S-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 111 шт: термін постачання 7-14 дні (днів) |
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AS4C1M16S-6TCNR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C1M16S-6TCNTR | Alliance Memory | DRAM 16Mb, 3.3V, 166Mhz 1M x 16 SDRAM |
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AS4C1M16S-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C1M16S-6TIN | Alliance Memory | DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Industrial Temp - Tray |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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AS4C1M16S-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bit Access time: 5.4ns Clock frequency: 166MHz Kind of package: in-tray Kind of interface: parallel Memory: 16Mb DRAM Case: TSOP50 II кількість в упаковці: 1 шт |
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AS4C1M16S-6TINTR | Alliance Memory | DRAM 16M, 3.3V, 143Mhz 1M x 16 Sync DRAM |
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AS4C1M16S-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C1M16S-7TCN | Alliance Memory | DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 143 MHz, Commercial Temp - Tray |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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AS4C1M16S-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C1M16S-7TCN - DRAM, SDRAM, 16 Mbit, 1M x 16 Bit, 143 MHz, TSOP-II, 50 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 50Pin(s) euEccn: NLR Speicherdichte: 16Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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AS4C1M16S-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 7-14 дні (днів) |
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AS4C1M16S-7TCNTR | Alliance Memory | DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM |
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AS4C1M16S-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 1Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C256M16D3A-12BAN | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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AS4C256M16D3A-12BANTR | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
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AS4C256M16D3A-12BCN | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
на замовлення 1537 шт: термін постачання 21-30 дні (днів) |
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AS4C256M16D3A-12BCNTR | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
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AS4C256M16D3A-12BIN | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
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AS4C256M16D3A-12BINTR | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
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AS4C256M16D3B-12BAN | Alliance Memory | DRAM 4G 1.5V 800MHz 256Mx16 DDR3 A-Temp |
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AS4C256M16D3B-12BANTR | Alliance Memory | DRAM 4G 1.5V 800MHz 256Mx16 DDR3 A-Temp |
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AS4C256M16D3B-12BCN | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
на замовлення 2006 шт: термін постачання 21-30 дні (днів) |
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AS4C256M16D3B-12BCNTR | Alliance Memory | DRAM 4G 1.5V 800MHz 256M x 16 DDR3 |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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AS4C256M16D3B-12BIN | Alliance Memory | DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp |
на замовлення 1921 шт: термін постачання 21-30 дні (днів) |
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AS4C256M16D3B-12BINTR | Alliance Memory | DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
AS4C1G8D3LA-10BANTR |
Виробник: Alliance Memory
DRAM DDR3L, 8G, 1G X 8, 1.35V, 78-ball FBGA, 1866 Mhz, Automotive Temp - Tape & Reel
DRAM DDR3L, 8G, 1G X 8, 1.35V, 78-ball FBGA, 1866 Mhz, Automotive Temp - Tape & Reel
товар відсутній
AS4C1G8D3LA-10BCN |
Виробник: Alliance Memory
DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET
DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET
на замовлення 461 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 2348.15 грн |
10+ | 2176.34 грн |
25+ | 1836.01 грн |
50+ | 1790.84 грн |
AS4C1G8D3LA-10BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C1G8D3LA-10BCN - DRAM, DDR3L, 8 Gbit, 1G x 8 Bit, 933 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 933MHz
Anzahl der Pins: 78Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C1G8D3LA-10BCN - DRAM, DDR3L, 8 Gbit, 1G x 8 Bit, 933 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 933MHz
Anzahl der Pins: 78Pin(s)
euEccn: NLR
Speicherdichte: 8Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2063.35 грн |
5+ | 1874.08 грн |
10+ | 1818.94 грн |
25+ | 1665.49 грн |
50+ | 1508.63 грн |
AS4C1G8D3LA-10BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2000 шт
товар відсутній
AS4C1G8D3LA-10BIN |
Виробник: Alliance Memory
DRAM DDR3L, 8G, 1G X 8, 1.35V, 78-ball FBGA, 933 Mhz, Industrial Temp - Tray
DRAM DDR3L, 8G, 1G X 8, 1.35V, 78-ball FBGA, 933 Mhz, Industrial Temp - Tray
на замовлення 768 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2133.49 грн |
10+ | 1977.73 грн |
25+ | 1608.17 грн |
50+ | 1607.5 грн |
100+ | 1418.86 грн |
220+ | 1376.34 грн |
440+ | 1335.16 грн |
AS4C1G8D3LA-10BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C1G8D3LA-10BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.35V; 933MHz; 13.91ns; FBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA78
Memory capacity: 8Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C1G8D4-75BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C1G8D4-75BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C1G8D4-75BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C1G8D4-75BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C1G8D4-75BCN |
Виробник: Alliance Memory
DRAM SDRAM - DDR4
DRAM SDRAM - DDR4
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1036.13 грн |
10+ | 946.47 грн |
25+ | 799.77 грн |
100+ | 704.11 грн |
AS4C1G8D4-75BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 209 шт
товар відсутній
AS4C1G8D4-75BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: 0...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
AS4C1G8D4-75BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: in-tray
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 209 шт
товар відсутній
AS4C1G8D4-75BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Kind of memory: DDR4; SDRAM
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Operating voltage: 1.2V
Clock frequency: 1333MHz
Memory organisation: 1Gx8bit
Kind of package: reel
Case: FBGA78
Mounting: SMD
Access time: 14.25ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
AS4C1G8D4A-62BCNTR |
Виробник: Alliance Memory
DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Commercial Temp, Rev.A - Reel
DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Commercial Temp, Rev.A - Reel
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 561.08 грн |
10+ | 509.52 грн |
25+ | 433.76 грн |
100+ | 387.93 грн |
250+ | 375.97 грн |
500+ | 357.37 грн |
1000+ | 345.41 грн |
AS4C1G8D4A-62BINTR |
Виробник: Alliance Memory
DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Industrial Temp, Rev.A - Reel
DRAM DDR4, 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Industrial Temp, Rev.A - Reel
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 674.22 грн |
10+ | 616.46 грн |
25+ | 524.1 грн |
100+ | 458.34 грн |
250+ | 435.75 грн |
500+ | 431.1 грн |
1000+ | 417.15 грн |
AS4C1M16S-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 111 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 147.54 грн |
5+ | 130.08 грн |
8+ | 113.48 грн |
20+ | 107.25 грн |
AS4C1M16S-6TCNR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C1M16S-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C1M16S-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 16Mb DRAM
Case: TSOP50 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 16Mb DRAM
Case: TSOP50 II
товар відсутній
AS4C1M16S-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C1M16S-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 372.58 грн |
AS4C1M16S-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C1M16S-6TCN |
Виробник: Alliance Memory
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Commercial Temp - Tray
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Commercial Temp - Tray
на замовлення 780 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 172.82 грн |
10+ | 153.54 грн |
117+ | 104.95 грн |
AS4C1M16S-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 111 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 177.05 грн |
5+ | 162.1 грн |
8+ | 136.17 грн |
20+ | 128.7 грн |
234+ | 126.21 грн |
AS4C1M16S-6TCNR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C1M16S-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C1M16S-6TIN |
Виробник: Alliance Memory
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Industrial Temp - Tray
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 166 Mhz, Industrial Temp - Tray
на замовлення 105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 196.84 грн |
10+ | 171.11 грн |
117+ | 133.52 грн |
585+ | 128.2 грн |
1053+ | 118.9 грн |
2574+ | 107.61 грн |
AS4C1M16S-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 16Mb DRAM
Case: TSOP50 II
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 16Mb DRAM
Case: TSOP50 II
кількість в упаковці: 1 шт
товар відсутній
AS4C1M16S-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C1M16S-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 143 MHz, Commercial Temp - Tray
DRAM SDRAM, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 143 MHz, Commercial Temp - Tray
на замовлення 190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 172.82 грн |
10+ | 150.49 грн |
117+ | 112.92 грн |
585+ | 110.93 грн |
1053+ | 103.62 грн |
2574+ | 94.32 грн |
10062+ | 93 грн |
AS4C1M16S-7TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C1M16S-7TCN - DRAM, SDRAM, 16 Mbit, 1M x 16 Bit, 143 MHz, TSOP-II, 50 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 50Pin(s)
euEccn: NLR
Speicherdichte: 16Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C1M16S-7TCN - DRAM, SDRAM, 16 Mbit, 1M x 16 Bit, 143 MHz, TSOP-II, 50 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 50Pin(s)
euEccn: NLR
Speicherdichte: 16Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 117 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 224.29 грн |
10+ | 186.29 грн |
25+ | 162.45 грн |
50+ | 142.54 грн |
100+ | 122.63 грн |
AS4C1M16S-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 268.26 грн |
5+ | 200.04 грн |
8+ | 135.34 грн |
20+ | 127.87 грн |
234+ | 125.38 грн |
AS4C1M16S-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 1Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C256M16D3A-12BAN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
на замовлення 240 шт:
термін постачання 21-30 дні (днів)AS4C256M16D3A-12BCN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
на замовлення 1537 шт:
термін постачання 21-30 дні (днів)AS4C256M16D3B-12BAN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 A-Temp
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 A-Temp
товар відсутній
AS4C256M16D3B-12BANTR |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 A-Temp
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 A-Temp
товар відсутній
AS4C256M16D3B-12BCN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
на замовлення 2006 шт:
термін постачання 21-30 дні (днів)AS4C256M16D3B-12BCNTR |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
DRAM 4G 1.5V 800MHz 256M x 16 DDR3
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)AS4C256M16D3B-12BIN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
на замовлення 1921 шт:
термін постачання 21-30 дні (днів)AS4C256M16D3B-12BINTR |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)