Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3868) > Сторінка 15 з 65
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| AOCA24106C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 20A 6ALPHADFNPackaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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| AOCA24106C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 20A 6ALPHADFNPackaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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| AOCA24106E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 20A 6ALPHADFNPackaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| AOCA24106E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 20A 6ALPHADFNPackaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
на замовлення 7980 шт: термін постачання 21-31 дні (днів) |
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| AOCA32106E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 25A 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (1.84x1.96) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| AOCA32108E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 25A 10DFN Power - Max: 3.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 10-AlphaDFN (3.01x1.52) Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drain to Source Voltage (Vdss): 12V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| AOCA32108E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 25A 10DFN Part Status: Active Supplier Device Package: 10-AlphaDFN (3.01x1.52) Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drain to Source Voltage (Vdss): 12V Power - Max: 3.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AOCA32112E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4.5A 4DFN Part Status: Active Supplier Device Package: 4-AlphaDFN (0.97x0.97) Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Drain to Source Voltage (Vdss): 20V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
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AOCA32112E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4.5A 4DFN Part Status: Active Supplier Device Package: 4-AlphaDFN (0.97x0.97) Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AOCA32116E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 6A 4DFN Part Status: Active Supplier Device Package: 4-AlphaDFN (1.2x1.2) Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Drain to Source Voltage (Vdss): 20V Power - Max: 1.7W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AOCA32116E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 6A 4DFN Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.7W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 4-AlphaDFN (1.2x1.2) Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
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AOCA32301 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 9A 4DFNPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 4-AlphaDFN (1.9x1.3) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
| AOCA32317 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 17A 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 10-AlphaDFN (3.37x1.47) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| AOCA33102E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 50A 14DFN Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drain to Source Voltage (Vdss): 12V Power - Max: 4.2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel, Common Drain Mounting Type: Surface Mount Package / Case: 14-SMD, No Lead Packaging: Tape & Reel (TR) Supplier Device Package: 14-AlphaDFN (3x2.74) Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
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AOCA33103E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 40A 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-AlphaDFN (2.52x2.52) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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AOCA33103E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 40A 10DFNPackaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-AlphaDFN (2.52x2.52) |
на замовлення 7585 шт: термін постачання 21-31 дні (днів) |
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| AOCA33104A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 30A 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-AlphaDFN (2.98x1.49) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||
| AOCA33104E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 30A 10DFNSupplier Device Package: 10-AlphaDFN (2.98x1.49) Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drain to Source Voltage (Vdss): 12V Power - Max: 3.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AOCA36102E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 22V 30A 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 10-AlphaDFN (3.4x1.96) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| AOCR33105E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-MRigidCSP (2.08x1.45) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||
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AOD11S60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 11A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
на замовлення 6395 шт: термін постачання 21-31 дні (днів) |
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AOD11S60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 11A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AOD1N60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 1.3A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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AOD1N60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 1.3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
на замовлення 15803 шт: термін постачання 21-31 дні (днів) |
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AOD1N60M | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AOD1R4A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 3.8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| AOD1R4A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 3.8A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AOD200 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 14A TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| AOD206_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 18A/46A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AOD206_030 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 18A/46A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD208 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 18A/54A TO252Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD210 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 23A/70A TO252Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD210_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 23A/70A TO252 Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD21357 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 70A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
на замовлення 29051 шт: термін постачання 21-31 дні (днів) |
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AOD21357 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 70A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
на замовлення 27500 шт: термін постачання 21-31 дні (днів) |
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AOD2144 | Alpha & Omega Semiconductor Inc. |
Description: NInput Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 6.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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AOD2210 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 200V 3A/18A TO252Input Capacitance (Ciss) (Max) @ Vds: 2065 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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AOD240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 23A/70A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V |
на замовлення 4989 шт: термін постачання 21-31 дні (днів) |
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AOD240 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 23A/70A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AOD240_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 23A/70A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD242 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 14.5A/54A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD254 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 4.5A/28A TO252Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 2.5W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD254 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 4.5A/28A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD254_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 4.5A/28A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AOD254_002 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AOD254_004 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD2544 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 6.5A/23A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Power Dissipation (Max): 6.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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AOD2544 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 6.5A/23A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Power Dissipation (Max): 6.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V |
на замовлення 9930 шт: термін постачання 21-31 дні (днів) |
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AOD256 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 3A/19A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V |
на замовлення 3386 шт: термін постачання 21-31 дні (днів) |
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AOD256 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 3A/19A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AOD256_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 3A/19A TO252Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD2606 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 14A/46A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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AOD2610 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 10A/46A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD2610 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 10A/46A TO252Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD2610_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD2610_002 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD2610E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOD2610E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 46A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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AOD280A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 14A TO252Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 645 шт: термін постачання 21-31 дні (днів) |
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AOD280A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 14A TO252Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| AOCA24106C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.62 грн |
| 10+ | 60.11 грн |
| 25+ | 57.11 грн |
| 100+ | 44.01 грн |
| 250+ | 41.14 грн |
| 500+ | 36.36 грн |
| 1000+ | 28.23 грн |
| 2500+ | 26.35 грн |
| AOCA24106C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 28.16 грн |
| AOCA24106E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| AOCA24106E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
на замовлення 7980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.62 грн |
| 10+ | 55.08 грн |
| 100+ | 42.82 грн |
| 500+ | 34.06 грн |
| 1000+ | 27.74 грн |
| 2000+ | 26.12 грн |
| AOCA32106E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (1.84x1.96)
Part Status: Active
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (1.84x1.96)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| AOCA32108E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Power - Max: 3.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 12V
Description: MOSFET 2N-CH 12V 25A 10DFN
Power - Max: 3.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 12V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| AOCA32108E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Part Status: Active
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 3.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 12V 25A 10DFN
Part Status: Active
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 3.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| AOCA32112E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Part Status: Active
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Part Status: Active
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| AOCA32112E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Part Status: Active
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Part Status: Active
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| AOCA32116E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 4DFN
Part Status: Active
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Description: MOSFET 2N-CH 20V 6A 4DFN
Part Status: Active
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
товару немає в наявності
В кошику
од. на суму грн.
| AOCA32116E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 4DFN
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Description: MOSFET 2N-CH 20V 6A 4DFN
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| AOCA32301 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.9x1.3)
Description: MOSFET 2N-CH 30V 9A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.9x1.3)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| AOCA32317 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.37x1.47)
Description: MOSFET 2N-CH 30V 17A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.37x1.47)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| AOCA33102E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 50A 14DFN
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 4.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel, Common Drain
Mounting Type: Surface Mount
Package / Case: 14-SMD, No Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: 14-AlphaDFN (3x2.74)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
Description: MOSFET 2N-CH 12V 50A 14DFN
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 4.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel, Common Drain
Mounting Type: Surface Mount
Package / Case: 14-SMD, No Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: 14-AlphaDFN (3x2.74)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
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| AOCA33103E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
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| AOCA33103E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
на замовлення 7585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.93 грн |
| 10+ | 69.56 грн |
| 100+ | 46.49 грн |
| 500+ | 34.34 грн |
| 1000+ | 31.35 грн |
| 2000+ | 30.68 грн |
| AOCA33104A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| AOCA33104E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10DFN
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 3.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 12V 30A 10DFN
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 3.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
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В кошику
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| AOCA36102E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 22V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.4x1.96)
Description: MOSFET 2N-CH 22V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.4x1.96)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| AOCR33105E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-MRigidCSP (2.08x1.45)
Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-MRigidCSP (2.08x1.45)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| AOD11S60 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
на замовлення 6395 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.16 грн |
| 10+ | 125.17 грн |
| 100+ | 86.46 грн |
| 500+ | 67.44 грн |
| AOD11S60 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 61.08 грн |
| 5000+ | 58.71 грн |
| AOD1N60 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 1.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 600V 1.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.42 грн |
| 5000+ | 14.52 грн |
| 7500+ | 13.86 грн |
| 12500+ | 12.32 грн |
| AOD1N60 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 1.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 600V 1.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 15803 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.46 грн |
| 10+ | 39.77 грн |
| 100+ | 25.83 грн |
| 500+ | 18.62 грн |
| 1000+ | 16.81 грн |
| AOD1N60M |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Description: MOSFET
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
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| AOD1R4A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 3.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
Description: MOSFET N-CH 700V 3.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD1R4A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 3.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
Description: MOSFET N-CH 700V 3.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
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| AOD200 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A TO252
Description: MOSFET N-CH 30V 14A TO252
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Мінімальне замовлення: 2500 шт
В кошику
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| AOD206_001 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A/46A TO252
Description: MOSFET N-CH 30V 18A/46A TO252
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| AOD206_030 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A/46A TO252
Description: MOSFET N-CH 30V 18A/46A TO252
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| AOD208 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A/54A TO252
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Description: MOSFET N-CH 30V 18A/54A TO252
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
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| AOD210 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 23A/70A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 23A/70A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD210_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 23A/70A TO252
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Description: MOSFET N-CH 30V 23A/70A TO252
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
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| AOD21357 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Description: MOSFET P-CH 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 29051 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.31 грн |
| 10+ | 58.97 грн |
| 50+ | 43.87 грн |
| 100+ | 36.57 грн |
| 500+ | 28.51 грн |
| AOD21357 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Description: MOSFET P-CH 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 25.57 грн |
| 7500+ | 21.83 грн |
| AOD2144 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD2210 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 200V 3A/18A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2065 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 3A/18A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2065 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD240 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 23A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Description: MOSFET N-CH 40V 23A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 4989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.94 грн |
| 10+ | 103.16 грн |
| 100+ | 70.16 грн |
| 500+ | 52.57 грн |
| 1000+ | 48.31 грн |
| AOD240 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 23A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Description: MOSFET N-CH 40V 23A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 48.34 грн |
| AOD240_001 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 23A/70A TO252
Description: MOSFET N-CH 40V 23A/70A TO252
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од. на суму грн.
| AOD242 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 14.5A/54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 20 V
Description: MOSFET N-CH 40V 14.5A/54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 20 V
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од. на суму грн.
| AOD254 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 4.5A/28A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 4.5A/28A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD254 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 4.5A/28A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
Description: MOSFET N-CH 150V 4.5A/28A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
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| AOD254_001 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 4.5A/28A TO252
Description: MOSFET N-CH 150V 4.5A/28A TO252
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| AOD254_002 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V TO-252
Description: MOSFET N-CH 150V TO-252
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| AOD254_004 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V TO-252
Description: MOSFET N-CH 150V TO-252
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| AOD2544 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 6.5A/23A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 6.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Description: MOSFET N-CH 150V 6.5A/23A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 6.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 37.48 грн |
| 7500+ | 32.33 грн |
| AOD2544 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 6.5A/23A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 6.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Description: MOSFET N-CH 150V 6.5A/23A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 6.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
на замовлення 9930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.29 грн |
| 10+ | 82.51 грн |
| 50+ | 62.08 грн |
| 100+ | 52.05 грн |
| 500+ | 41.17 грн |
| AOD256 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 3A/19A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
Description: MOSFET N-CH 150V 3A/19A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
на замовлення 3386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.87 грн |
| 10+ | 83.88 грн |
| 100+ | 56.55 грн |
| 500+ | 42.05 грн |
| 1000+ | 38.51 грн |
| AOD256 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 3A/19A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
Description: MOSFET N-CH 150V 3A/19A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 38.37 грн |
| AOD256_001 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 3A/19A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 150V 3A/19A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| AOD2606 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 14A/46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V
Description: MOSFET N-CH 60V 14A/46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V
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Мінімальне замовлення: 2500 шт
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| AOD2610 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 10A/46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 30 V
Description: MOSFET N-CH 60V 10A/46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 30 V
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| AOD2610 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 10A/46A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 10A/46A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD2610_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V TO-252
Description: MOSFET N-CH 60V TO-252
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| AOD2610_002 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V TO-252
Description: MOSFET N-CH 60V TO-252
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| AOD2610E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET N-CH 60V 46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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| AOD2610E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET N-CH 60V 46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD280A60 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 14A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 14A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.57 грн |
| 10+ | 135.84 грн |
| 50+ | 103.99 грн |
| 100+ | 87.97 грн |
| 500+ | 71.09 грн |
| AOD280A60 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 14A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 14A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.







