Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3965) > Сторінка 15 з 67
Фото | Назва | Виробник | Інформація |
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AOB7S60L | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOB7S60L | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOB7S65L | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOB7S65L | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOB9N70L | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOB9N70L | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2401 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-AlphaDFN (1.57x1.57) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2403 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2403 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2411 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2411 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2411 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2412 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2413 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2414 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2415 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2417 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2421 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2422 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2423 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2800 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 4WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2802 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 4WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AOC2802_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 4WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AOC2804 | Alpha & Omega Semiconductor Inc. |
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на замовлення 3158 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2804 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2804B | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2806 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Supplier Device Package: 4-DFN (1.7x1.7) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC2806 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4DFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Supplier Device Package: 4-DFN (1.7x1.7) |
на замовлення 391 шт: термін постачання 21-31 дні (днів) |
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AOC2870 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-DFN (1.7x1.7) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOC2870 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-DFN (1.7x1.7) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOC3860A | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-AlphaDFN (3.05x1.77) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AOC3860C | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (3.05x1.77) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC3860C | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (3.05x1.77) |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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AOC3862 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-DFN (3.55x1.77) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AOC3864 | Alpha & Omega Semiconductor Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AOC3870C | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (3.01x1.52) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AOC3870C | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (3.01x1.52) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AOC3878 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (3.55x1.77) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AOC4810 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-XFLGA Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-AlphaDFN (3.2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AOC4810 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-XFLGA Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-AlphaDFN (3.2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AOCA24106C | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AOCA24106C | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AOCA24106E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AOCA24106E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-AlphaDFN (1.9x1.6) |
на замовлення 7980 шт: термін постачання 21-31 дні (днів) |
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AOCA32106E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (1.84x1.96) Part Status: Active |
товару немає в наявності |
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AOCA32108E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 25A 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (3.01x1.52) Part Status: Active |
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AOCA32108E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 25A 10DFN Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (3.01x1.52) Part Status: Active |
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AOCA32112E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4.5A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Part Status: Active |
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В кошику од. на суму грн. | ||||||||||||||||
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AOCA32112E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4.5A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-AlphaDFN (0.97x0.97) Part Status: Active |
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AOCA32116E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 6A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-AlphaDFN (1.2x1.2) Part Status: Active |
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AOCA32116E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 6A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-AlphaDFN (1.2x1.2) Part Status: Active |
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AOCA32301 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 4-AlphaDFN (1.9x1.3) |
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AOCA33102E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 50A 14DFN Packaging: Tape & Reel (TR) Package / Case: 14-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.2W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 14-AlphaDFN (3x2.74) |
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В кошику од. на суму грн. | |||||||||||||||||
AOCA33103E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-AlphaDFN (2.52x2.52) |
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AOCA33103E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-AlphaDFN (2.52x2.52) |
на замовлення 7755 шт: термін постачання 21-31 дні (днів) |
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AOCA33104A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 30A 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-AlphaDFN (2.98x1.49) |
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AOCA33104E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 10-AlphaDFN (2.98x1.49) |
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AOCA36102E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 10-AlphaDFN (3.4x1.96) |
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AOCR33105E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 10-MRigidCSP (2.08x1.45) |
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AOD11S60 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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AOB7S60L |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO263
Description: MOSFET N-CH 600V 7A TO263
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AOB7S60L |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO263
Description: MOSFET N-CH 600V 7A TO263
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AOB7S65L |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Description: MOSFET N-CH 650V 7A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOB7S65L |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Description: MOSFET N-CH 650V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOB9N70L |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 700V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
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AOB9N70L |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 700V 9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
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AOC2401 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.57x1.57)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V
Description: MOSFET P-CH 30V 3A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1.5A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.57x1.57)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1327 pF @ 15 V
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AOC2403 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
AOC2403 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: MOSFET P-CH 20V 1.8A 4ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
AOC2411 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Description: MOSFET P-CH 30V 3.4A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2411 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Description: MOSFET P-CH 30V 3.4A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2411 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3.4A 4WLCSP
Description: MOSFET P-CH 30V 3.4A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2412 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 4.5A 4WLCSP
Description: MOSFET N-CH 20V 4.5A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2413 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 3.5A 4ALPHADFN
Description: MOSFET P-CH 8V 3.5A 4ALPHADFN
товару немає в наявності
В кошику
од. на суму грн.
AOC2414 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 4.5A MCSP1.57
Description: MOSFET N-CH 8V 4.5A MCSP1.57
товару немає в наявності
В кошику
од. на суму грн.
AOC2415 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.5A 4WLCSP
Description: MOSFET P-CH 20V 3.5A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2417 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.5A 4WLCSP
Description: MOSFET P-CH 20V 3.5A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2421 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 2.5A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V
Description: MOSFET P-CH 8V 2.5A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 4 V
товару немає в наявності
В кошику
од. на суму грн.
AOC2422 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 3.5A 4WLCSP
Description: MOSFET N-CH 8V 3.5A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2423 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 2A 4WLCSP
Description: MOSFET P-CH 20V 2A 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2800 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Description: MOSFET 2N-CH 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2802 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Description: MOSFET 2N-CH 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2802_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4WLCSP
Description: MOSFET 2N-CH 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
AOC2804 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V
Description: MOSFET 2N-CH 20V
на замовлення 3158 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
AOC2804 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH
Description: MOSFET 2N-CH
товару немає в наявності
В кошику
од. на суму грн.
AOC2804B |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CHANNEL 4DFN
Description: MOSFET 2 N-CHANNEL 4DFN
товару немає в наявності
В кошику
од. на суму грн.
AOC2806 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
товару немає в наявності
В кошику
од. на суму грн.
AOC2806 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
Description: MOSFET 2N-CH 20V 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Supplier Device Package: 4-DFN (1.7x1.7)
на замовлення 391 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.69 грн |
10+ | 38.24 грн |
100+ | 26.21 грн |
AOC2870 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
Description: MOSFET 2N-CH 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 67.64 грн |
10+ | 56.56 грн |
100+ | 39.19 грн |
500+ | 30.73 грн |
1000+ | 26.15 грн |
AOC2870 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
Description: MOSFET 2N-CH 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DFN (1.7x1.7)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 25.78 грн |
AOC3860A |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
товару немає в наявності
В кошику
од. на суму грн.
AOC3860C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
товару немає в наявності
В кошику
од. на суму грн.
AOC3860C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Description: MOSFET 2N-CH 12V 25A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (3.05x1.77)
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 111.41 грн |
10+ | 67.67 грн |
100+ | 45.14 грн |
500+ | 33.30 грн |
1000+ | 30.38 грн |
2000+ | 29.51 грн |
AOC3862 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
товару немає в наявності
В кошику
од. на суму грн.
AOC3864 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CHANNEL 6DFN
Description: MOSFET 2 N-CHANNEL 6DFN
товару немає в наявності
В кошику
од. на суму грн.
AOC3870C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 24.69 грн |
AOC3870C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.28 грн |
10+ | 52.72 грн |
25+ | 50.06 грн |
100+ | 38.58 грн |
250+ | 36.06 грн |
500+ | 31.87 грн |
1000+ | 24.75 грн |
2500+ | 23.10 грн |
AOC3878 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 35A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.55x1.77)
Description: MOSFET 2N-CH 12V 35A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.55x1.77)
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AOC4810 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
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AOC4810 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
Description: MOSFET 2N-CH 8ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-AlphaDFN (3.2x2)
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AOCA24106C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 28.33 грн |
AOCA24106C |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.03 грн |
10+ | 60.46 грн |
25+ | 57.44 грн |
100+ | 44.27 грн |
250+ | 41.38 грн |
500+ | 36.57 грн |
1000+ | 28.40 грн |
2500+ | 26.50 грн |
AOCA24106E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
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AOCA24106E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
Description: MOSFET 2N-CH 12V 20A 6ALPHADFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-AlphaDFN (1.9x1.6)
на замовлення 7980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.03 грн |
10+ | 55.41 грн |
100+ | 43.07 грн |
500+ | 34.26 грн |
1000+ | 27.91 грн |
2000+ | 26.27 грн |
AOCA32106E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (1.84x1.96)
Part Status: Active
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (1.84x1.96)
Part Status: Active
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AOCA32108E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
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AOCA32108E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
Description: MOSFET 2N-CH 12V 25A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.01x1.52)
Part Status: Active
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AOCA32112E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
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AOCA32112E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
Description: MOSFET 2N-CH 20V 4.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (0.97x0.97)
Part Status: Active
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AOCA32116E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
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AOCA32116E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
Description: MOSFET 2N-CH 20V 6A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.2x1.2)
Part Status: Active
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AOCA32301 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.9x1.3)
Description: MOSFET 2N-CH 30V 9A 4ALPHADFN
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 4-AlphaDFN (1.9x1.3)
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AOCA33102E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 50A 14DFN
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 14-AlphaDFN (3x2.74)
Description: MOSFET 2N-CH 12V 50A 14DFN
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 14-AlphaDFN (3x2.74)
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AOCA33103E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
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AOCA33103E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
Description: MOSFET 2N-CH 12V 40A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.52x2.52)
на замовлення 7755 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.79 грн |
10+ | 67.90 грн |
25+ | 64.46 грн |
100+ | 49.70 грн |
250+ | 46.46 грн |
500+ | 41.05 грн |
1000+ | 31.88 грн |
2500+ | 29.75 грн |
AOCA33104A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
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AOCA33104E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
Description: MOSFET 2N-CH 12V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 10-AlphaDFN (2.98x1.49)
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AOCA36102E |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 22V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.4x1.96)
Description: MOSFET 2N-CH 22V 30A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 10-AlphaDFN (3.4x1.96)
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AOCR33105E |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-MRigidCSP (2.08x1.45)
Description: MOSFET 2N-CH 12V 30A 10MRIGIDCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 10-MRigidCSP (2.08x1.45)
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AOD11S60 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 68.41 грн |
5000+ | 65.76 грн |