Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3921) > Сторінка 20 з 66
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AOD5N50_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| AOD5N50M | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
AOD5T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 3.9A TO252Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AOD5T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 3.9A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V |
на замовлення 85 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD600A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 8A TO252Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD600A60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 8A TO252Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V |
на замовлення 2471 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD600A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD600A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V |
на замовлення 3486 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD600A70R | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD600A70R | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 8.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 4607 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD603A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 3.5A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD604 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 8A TO252-5Packaging: Tape & Reel (TR) Package / Case: TO-252-6, DPak (5 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-5 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD606 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 8A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD607 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 12A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AOD607_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 12A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Supplier Device Package: TO-252-4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AOD607A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19W (Tc), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA Supplier Device Package: TO-252-4L |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD607_DELTA | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 12A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA Supplier Device Package: TO-252-4L Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AOD609 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4LPackaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Not For New Designs |
на замовлення 109881 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD609 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Not For New Designs |
на замовлення 108000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD609G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD609G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4LPackaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
AOD661 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2 N-CH 30V 12A TO252-4L |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD66406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 25A/60A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD66406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 25A/60A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V |
на замовлення 16258 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD66919 | Alpha & Omega Semiconductor Inc. |
Description: NInput Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 6.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD66920 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 19.5A/70A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD66920 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 19.5A/70A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 10293 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD66923 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 16.5A/58A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD66923 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 16.5A/58A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V |
на замовлення 7751 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| AOD6B65MQ1E | Alpha & Omega Semiconductor Inc. |
Description: IGBT 8APackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 81 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 9ns/91ns Switching Energy: 110µJ (on), 80µJ (off) Test Condition: 400V, 6A, 50Ohm, 15V Gate Charge: 13.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 18 A Power - Max: 96 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
|
AOD6N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 5.3A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD6N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 5.3A TO252Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AOD780A70 | Alpha & Omega Semiconductor Inc. |
Description: NDrain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4.1V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
|
AOD7B65M3 | Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 7A TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD7N60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 7A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD7N60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 7A TO252Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AOD7N65 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD7N65 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
на замовлення 2818 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD7S60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 7A TO252Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 4907 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD7S60 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 7A TO252Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD7S65 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V |
на замовлення 2492 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOD7S65 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD8N25 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 250V 8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
|
AOD950A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 5A TO252 |
на замовлення 2326 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
|
AOD950A70 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 700V 5A TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD9N40 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 400V 8A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AOD9N40 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 400V 8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD9N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 9A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
AOD9N50 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 9A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V |
на замовлення 4410 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
AOD9T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 6.6A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
|
AOD9T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
|
AOD9T40P | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 400V 6.6A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
| AOE66410 | Alpha & Omega Semiconductor Inc. |
Description: NInput Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 147W Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
|
AOE6930 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 75W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
AOE6930 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 75W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
на замовлення 2691 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOE6932 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A/85A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 52W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
на замовлення 2922 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AOE6932 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A/85A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 52W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
AOE6936 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 39W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
AOE6936 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 39W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
на замовлення 1968 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| AOGF20D65L1L | Alpha & Omega Semiconductor Inc. |
Description: DIODE STANDARD 650V 40A TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 104 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: TO-3PF Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. |
| AOD5N50_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| AOD5N50M |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| AOD5T40P |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 3.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 400V 3.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| AOD5T40P |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 3.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
Description: MOSFET N-CH 400V 3.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.15 грн |
| 10+ | 30.96 грн |
| AOD600A60 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD600A60 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO252
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Description: MOSFET N-CH 600V 8A TO252
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
на замовлення 2471 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.58 грн |
| 10+ | 81.74 грн |
| 100+ | 54.92 грн |
| 500+ | 40.75 грн |
| 1000+ | 37.27 грн |
| AOD600A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 700V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.50 грн |
| AOD600A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Description: MOSFET N-CH 700V 8.5A TO252
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
на замовлення 3486 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.79 грн |
| 10+ | 85.78 грн |
| 100+ | 57.74 грн |
| 500+ | 42.93 грн |
| 1000+ | 39.31 грн |
| AOD600A70R |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 700V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD600A70R |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V 8.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4607 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.79 грн |
| 10+ | 85.78 грн |
| 100+ | 57.74 грн |
| 500+ | 42.93 грн |
| 1000+ | 39.31 грн |
| AOD603A |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 3.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 60V 3.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD604 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 8A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-5
Description: MOSFET N/P-CH 40V 8A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-5
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD606 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD607 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
В кошику
од. на суму грн.
| AOD607_001 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-252-4L
товару немає в наявності
В кошику
од. на суму грн.
| AOD607A |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD607_DELTA |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| AOD609 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 109881 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.29 грн |
| 10+ | 62.52 грн |
| 100+ | 41.51 грн |
| 500+ | 30.50 грн |
| 1000+ | 27.78 грн |
| AOD609 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 108000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.48 грн |
| 5000+ | 24.52 грн |
| 7500+ | 23.53 грн |
| 12500+ | 21.04 грн |
| 17500+ | 20.42 грн |
| 25000+ | 20.14 грн |
| AOD609G |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD609G |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| AOD661 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CH 30V 12A TO252-4L
Description: MOSFET 2 N-CH 30V 12A TO252-4L
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD66406 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.48 грн |
| 5000+ | 16.38 грн |
| 7500+ | 15.66 грн |
| 12500+ | 13.93 грн |
| AOD66406 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 16258 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.00 грн |
| 10+ | 44.05 грн |
| 100+ | 28.79 грн |
| 500+ | 20.84 грн |
| 1000+ | 18.86 грн |
| AOD66919 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD66920 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 41.03 грн |
| 5000+ | 36.86 грн |
| 7500+ | 35.51 грн |
| AOD66920 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 10293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.23 грн |
| 10+ | 88.92 грн |
| 100+ | 60.14 грн |
| 500+ | 44.85 грн |
| 1000+ | 41.12 грн |
| AOD66923 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 35.04 грн |
| 5000+ | 31.39 грн |
| AOD66923 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 7751 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.59 грн |
| 10+ | 77.48 грн |
| 100+ | 51.98 грн |
| 500+ | 38.53 грн |
| 1000+ | 35.23 грн |
| AOD6B65MQ1E |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 8A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 9ns/91ns
Switching Energy: 110µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 96 W
Description: IGBT 8A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 9ns/91ns
Switching Energy: 110µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 96 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD6N50 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD6N50 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5.3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 5.3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| AOD780A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Description: N
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD7B65M3 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 7A TO252
Description: IGBT 650V 7A TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD7N60 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD7N60 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Description: MOSFET N-CH 600V 7A TO252
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| AOD7N65 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD7N65 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 2818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.59 грн |
| 10+ | 77.25 грн |
| 100+ | 51.86 грн |
| 500+ | 38.45 грн |
| 1000+ | 35.16 грн |
| AOD7S60 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 177.07 грн |
| 10+ | 109.79 грн |
| 100+ | 74.91 грн |
| 500+ | 56.30 грн |
| 1000+ | 51.79 грн |
| AOD7S60 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.50 грн |
| AOD7S65 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.74 грн |
| 10+ | 107.99 грн |
| 100+ | 73.75 грн |
| 500+ | 55.47 грн |
| 1000+ | 51.05 грн |
| AOD7S65 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD8N25 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 250V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 25 V
Description: MOSFET N CH 250V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 1.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD950A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 5A TO252
Description: MOSFET N-CH 700V 5A TO252
на замовлення 2326 шт:
термін постачання 21-31 дні (днів)
| AOD950A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 5A TO252
Description: MOSFET N-CH 700V 5A TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD9N40 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 400V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET N CH 400V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| AOD9N40 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 400V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET N CH 400V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD9N50 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Description: MOSFET N-CH 500V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD9N50 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Description: MOSFET N-CH 500V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 4410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.73 грн |
| 10+ | 66.34 грн |
| 100+ | 44.35 грн |
| 500+ | 32.78 грн |
| 1000+ | 29.93 грн |
| AOD9T40P |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 6.6A
Description: MOSFET N-CH 400V 6.6A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| AOD9T40P |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
Description: MOSFET N-CH
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| AOD9T40P |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 6.6A
Description: MOSFET N-CH 400V 6.6A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| AOE66410 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 147W
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 147W
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AOE6930 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AOE6930 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 75W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.82 грн |
| 10+ | 123.92 грн |
| 100+ | 85.61 грн |
| 500+ | 66.78 грн |
| AOE6932 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 2922 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.94 грн |
| 10+ | 91.54 грн |
| 100+ | 72.90 грн |
| 500+ | 57.89 грн |
| 1000+ | 49.12 грн |
| AOE6932 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AOE6936 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AOE6936 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 55A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 39W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 1968 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.46 грн |
| 10+ | 84.36 грн |
| 100+ | 57.11 грн |
| 500+ | 42.64 грн |
| 1000+ | 40.44 грн |
| AOGF20D65L1L |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: DIODE STANDARD 650V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Description: DIODE STANDARD 650V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.










