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AOD518_051 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH TO-252
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AOD520 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH
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AOD522 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH
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AOD522P AOD522P Alpha & Omega Semiconductor Inc. AOD522P.pdf Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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AOD526_DELTA AOD526_DELTA Alpha & Omega Semiconductor Inc. AOD526.pdf Description: MOSFET N-CH 30V 50A TO252
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AOD528 AOD528 Alpha & Omega Semiconductor Inc. AOD528.pdf Description: MOSFET N-CH 30V 17A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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AOD538 AOD538 Alpha & Omega Semiconductor Inc. AOD538.pdf Description: MOSFET N-CH 30V 34A
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AOD558 AOD558 Alpha & Omega Semiconductor Inc. AOD558.pdf Description: 30V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
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AOD558 AOD558 Alpha & Omega Semiconductor Inc. AOD558.pdf Description: 30V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
на замовлення 2148 шт:
термін постачання 21-31 дні (днів)
5+69.24 грн
10+41.23 грн
100+26.75 грн
500+19.27 грн
1000+17.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOD5B60D AOD5B60D Alpha & Omega Semiconductor Inc. TO252.pdf Description: IGBT 600V 23A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+135.29 грн
10+83.22 грн
100+55.87 грн
500+41.43 грн
1000+37.89 грн
Мінімальне замовлення: 3
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AOD5B60D AOD5B60D Alpha & Omega Semiconductor Inc. TO252.pdf Description: IGBT 600V 23A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+37.68 грн
5000+33.77 грн
Мінімальне замовлення: 2500
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AOD5B65M1 AOD5B65M1 Alpha & Omega Semiconductor Inc. AOD5B65M1.pdf Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
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AOD5B65M1 AOD5B65M1 Alpha & Omega Semiconductor Inc. AOD5B65M1.pdf Description: IGBT 650V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
на замовлення 2208 шт:
термін постачання 21-31 дні (днів)
4+104.25 грн
10+67.97 грн
100+47.59 грн
500+36.12 грн
1000+33.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AOD5B65MQ1E Alpha & Omega Semiconductor Inc. AOD5B65MQ1E.pdf Description: IGBT 5A 650V TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 7ns/78ns
Switching Energy: 90µJ (on), 60µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 8.8 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
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AOD5B65N1 AOD5B65N1 Alpha & Omega Semiconductor Inc. AOD5B65N1.pdf Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8ns/73ns
Switching Energy: 81µJ (on), 49µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.2 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
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AOD5N40 AOD5N40 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=1159 Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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AOD5N40 AOD5N40 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=1159 Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
5+72.42 грн
10+43.60 грн
100+28.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOD5N50 AOD5N50 Alpha & Omega Semiconductor Inc. TO252.pdf Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD5N50_001 Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD5N50M AOD5N50M Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD5T40P AOD5T40P Alpha & Omega Semiconductor Inc. AOD5T40P.pdf Description: MOSFET N-CH 400V 3.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
7+49.34 грн
10+31.73 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AOD5T40P AOD5T40P Alpha & Omega Semiconductor Inc. AOD5T40P.pdf Description: MOSFET N-CH 400V 3.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
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AOD600A60 AOD600A60 Alpha & Omega Semiconductor Inc. AOD600A60.pdf Description: MOSFET N-CH 600V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
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AOD600A60 AOD600A60 Alpha & Omega Semiconductor Inc. AOD600A60.pdf Description: MOSFET N-CH 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
на замовлення 2471 шт:
термін постачання 21-31 дні (днів)
3+136.88 грн
10+83.76 грн
100+56.27 грн
500+41.75 грн
1000+38.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD600A70 AOD600A70 Alpha & Omega Semiconductor Inc. AOD600A70.pdf Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+35.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD600A70 AOD600A70 Alpha & Omega Semiconductor Inc. AOD600A70.pdf Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 3486 шт:
термін постачання 21-31 дні (днів)
3+143.25 грн
10+87.90 грн
100+59.17 грн
500+43.99 грн
1000+40.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD600A70R AOD600A70R Alpha & Omega Semiconductor Inc. AOD600A70R.pdf Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 4607 шт:
термін постачання 21-31 дні (днів)
3+143.25 грн
10+87.90 грн
100+59.17 грн
500+43.99 грн
1000+40.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD600A70R AOD600A70R Alpha & Omega Semiconductor Inc. AOD600A70R.pdf Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
AOD603A AOD603A Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2101 Description: MOSFET N/P-CH 60V 3.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
В кошику  од. на суму  грн.
AOD604 AOD604 Alpha & Omega Semiconductor Inc. AOD604_DS.pdf Description: MOSFET N/P-CH 40V 8A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-5
товару немає в наявності
В кошику  од. на суму  грн.
AOD606 AOD606 Alpha & Omega Semiconductor Inc. AOD606.pdf Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
В кошику  од. на суму  грн.
AOD607 AOD607 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
В кошику  од. на суму  грн.
AOD607_001 AOD607_001 Alpha & Omega Semiconductor Inc. AOD607.pdf Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-252-4L
товару немає в наявності
В кошику  од. на суму  грн.
AOD607A AOD607A Alpha & Omega Semiconductor Inc. AOD607A.pdf Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
товару немає в наявності
В кошику  од. на суму  грн.
AOD607_DELTA AOD607_DELTA Alpha & Omega Semiconductor Inc. AOD607.pdf Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
AOD609 AOD609 Alpha & Omega Semiconductor Inc. AOD609.pdf Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 167610 шт:
термін постачання 21-31 дні (днів)
4+99.48 грн
10+60.16 грн
100+39.79 грн
500+29.15 грн
1000+26.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AOD609 AOD609 Alpha & Omega Semiconductor Inc. AOD609.pdf Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
2500+26.17 грн
5000+23.32 грн
7500+22.37 грн
12500+20.23 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD609G AOD609G Alpha & Omega Semiconductor Inc. AOD609G.pdf Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
AOD609G AOD609G Alpha & Omega Semiconductor Inc. AOD609G.pdf Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
AOD661 AOD661 Alpha & Omega Semiconductor Inc. AOD661.pdf Description: MOSFET 2 N-CH 30V 12A TO252-4L
товару немає в наявності
В кошику  од. на суму  грн.
AOD66406 AOD66406 Alpha & Omega Semiconductor Inc. AOD66406.pdf Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
2500+16.59 грн
5000+14.80 грн
7500+14.21 грн
12500+12.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD66406 AOD66406 Alpha & Omega Semiconductor Inc. AOD66406.pdf Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 28383 шт:
термін постачання 21-31 дні (днів)
5+72.42 грн
10+43.76 грн
100+28.50 грн
500+20.58 грн
1000+18.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOD66919 AOD66919 Alpha & Omega Semiconductor Inc. AOD66919.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
AOD66920 AOD66920 Alpha & Omega Semiconductor Inc. AOD66920.pdf Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)
2500+36.98 грн
5000+33.18 грн
7500+32.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD66920 AOD66920 Alpha & Omega Semiconductor Inc. AOD66920.pdf Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 67974 шт:
термін постачання 21-31 дні (днів)
3+132.10 грн
10+81.00 грн
100+54.55 грн
500+40.55 грн
1000+37.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD66923 AOD66923 Alpha & Omega Semiconductor Inc. AOD66923.pdf Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+31.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD66923 AOD66923 Alpha & Omega Semiconductor Inc. AOD66923.pdf Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 8250 шт:
термін постачання 21-31 дні (днів)
3+115.39 грн
10+70.58 грн
100+47.21 грн
500+34.90 грн
1000+31.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD6B65MQ1E Alpha & Omega Semiconductor Inc. AOD6B65MQ1E.pdf Description: IGBT 8A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 9ns/91ns
Switching Energy: 110µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 96 W
товару немає в наявності
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AOD6N50 AOD6N50 Alpha & Omega Semiconductor Inc. AOD6N50.pdf Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD6N50 AOD6N50 Alpha & Omega Semiconductor Inc. AOD6N50.pdf Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD780A70 AOD780A70 Alpha & Omega Semiconductor Inc. AOD780A70.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
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AOD7B65M3 AOD7B65M3 Alpha & Omega Semiconductor Inc. AOD7B65M3.pdf Description: IGBT 650V 7A TO252
товару немає в наявності
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AOD7N60 AOD7N60 Alpha & Omega Semiconductor Inc. TO252.pdf Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
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AOD7N60 AOD7N60 Alpha & Omega Semiconductor Inc. TO252.pdf Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
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AOD7N65 AOD7N65 Alpha & Omega Semiconductor Inc. AOD7N65.pdf Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 6796 шт:
термін постачання 21-31 дні (днів)
3+116.19 грн
10+70.81 грн
100+47.33 грн
500+34.98 грн
1000+31.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD7N65 AOD7N65 Alpha & Omega Semiconductor Inc. AOD7N65.pdf Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+31.72 грн
5000+28.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD7S60 AOD7S60 Alpha & Omega Semiconductor Inc. AOD7S60.pdf Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+48.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD7S60 AOD7S60 Alpha & Omega Semiconductor Inc. AOD7S60.pdf Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
2+181.44 грн
10+112.50 грн
100+76.76 грн
500+57.69 грн
1000+53.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOD7S65 AOD7S65 Alpha & Omega Semiconductor Inc. AOD7S65.pdf Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOD7S65 AOD7S65 Alpha & Omega Semiconductor Inc. AOD7S65.pdf Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
2+174.28 грн
10+107.36 грн
100+73.01 грн
500+54.73 грн
1000+50.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOD518_051
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO-252
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AOD520
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
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AOD522
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
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AOD522P AOD522P.pdf
AOD522P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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AOD526_DELTA AOD526.pdf
AOD526_DELTA
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 50A TO252
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AOD528 AOD528.pdf
AOD528
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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AOD538 AOD538.pdf
AOD538
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 34A
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AOD558 AOD558.pdf
AOD558
Виробник: Alpha & Omega Semiconductor Inc.
Description: 30V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
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AOD558 AOD558.pdf
AOD558
Виробник: Alpha & Omega Semiconductor Inc.
Description: 30V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
на замовлення 2148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.24 грн
10+41.23 грн
100+26.75 грн
500+19.27 грн
1000+17.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOD5B60D TO252.pdf
AOD5B60D
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 23A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.29 грн
10+83.22 грн
100+55.87 грн
500+41.43 грн
1000+37.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD5B60D TO252.pdf
AOD5B60D
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 23A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+37.68 грн
5000+33.77 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD5B65M1 AOD5B65M1.pdf
AOD5B65M1
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
товару немає в наявності
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AOD5B65M1 AOD5B65M1.pdf
AOD5B65M1
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
на замовлення 2208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.25 грн
10+67.97 грн
100+47.59 грн
500+36.12 грн
1000+33.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AOD5B65MQ1E AOD5B65MQ1E.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 5A 650V TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 7ns/78ns
Switching Energy: 90µJ (on), 60µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 8.8 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
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AOD5B65N1 AOD5B65N1.pdf
AOD5B65N1
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8ns/73ns
Switching Energy: 81µJ (on), 49µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.2 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
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AOD5N40 combine-support-documents?resources=1159
AOD5N40
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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AOD5N40 combine-support-documents?resources=1159
AOD5N40
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 4.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.42 грн
10+43.60 грн
100+28.45 грн
Мінімальне замовлення: 5
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AOD5N50 TO252.pdf
AOD5N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD5N50_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD5N50M
AOD5N50M
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD5T40P AOD5T40P.pdf
AOD5T40P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 3.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.34 грн
10+31.73 грн
Мінімальне замовлення: 7
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AOD5T40P AOD5T40P.pdf
AOD5T40P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 400V 3.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
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AOD600A60 AOD600A60.pdf
AOD600A60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
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AOD600A60 AOD600A60.pdf
AOD600A60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
на замовлення 2471 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.88 грн
10+83.76 грн
100+56.27 грн
500+41.75 грн
1000+38.19 грн
Мінімальне замовлення: 3
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AOD600A70 AOD600A70.pdf
AOD600A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+35.35 грн
Мінімальне замовлення: 2500
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AOD600A70 AOD600A70.pdf
AOD600A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 3486 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.25 грн
10+87.90 грн
100+59.17 грн
500+43.99 грн
1000+40.28 грн
Мінімальне замовлення: 3
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AOD600A70R AOD600A70R.pdf
AOD600A70R
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 4607 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.25 грн
10+87.90 грн
100+59.17 грн
500+43.99 грн
1000+40.28 грн
Мінімальне замовлення: 3
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AOD600A70R AOD600A70R.pdf
AOD600A70R
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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AOD603A combine-support-documents?resources=2101
AOD603A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 3.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
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AOD604 AOD604_DS.pdf
AOD604
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 8A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-5
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AOD606 AOD606.pdf
AOD606
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
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AOD607 AOSGreenPolicy.pdf
AOD607
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-4L
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AOD607_001 AOD607.pdf
AOD607_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-252-4L
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AOD607A AOD607A.pdf
AOD607A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
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AOD607_DELTA AOD607.pdf
AOD607_DELTA
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Obsolete
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AOD609 AOD609.pdf
AOD609
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 167610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.48 грн
10+60.16 грн
100+39.79 грн
500+29.15 грн
1000+26.51 грн
Мінімальне замовлення: 4
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AOD609 AOD609.pdf
AOD609
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Not For New Designs
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+26.17 грн
5000+23.32 грн
7500+22.37 грн
12500+20.23 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD609G AOD609G.pdf
AOD609G
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
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AOD609G AOD609G.pdf
AOD609G
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
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AOD661 AOD661.pdf
AOD661
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2 N-CH 30V 12A TO252-4L
товару немає в наявності
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AOD66406 AOD66406.pdf
AOD66406
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+16.59 грн
5000+14.80 грн
7500+14.21 грн
12500+12.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD66406 AOD66406.pdf
AOD66406
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 25A/60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
на замовлення 28383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.42 грн
10+43.76 грн
100+28.50 грн
500+20.58 грн
1000+18.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOD66919 AOD66919.pdf
AOD66919
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
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AOD66920 AOD66920.pdf
AOD66920
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+36.98 грн
5000+33.18 грн
7500+32.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD66920 AOD66920.pdf
AOD66920
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 19.5A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 67974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.10 грн
10+81.00 грн
100+54.55 грн
500+40.55 грн
1000+37.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOD66923 AOD66923.pdf
AOD66923
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+31.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD66923 AOD66923.pdf
AOD66923
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5A/58A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 8250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.39 грн
10+70.58 грн
100+47.21 грн
500+34.90 грн
1000+31.87 грн
Мінімальне замовлення: 3
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AOD6B65MQ1E AOD6B65MQ1E.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 8A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 9ns/91ns
Switching Energy: 110µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 96 W
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AOD6N50 AOD6N50.pdf
AOD6N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD6N50 AOD6N50.pdf
AOD6N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 5.3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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AOD780A70 AOD780A70.pdf
AOD780A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
товару немає в наявності
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AOD7B65M3 AOD7B65M3.pdf
AOD7B65M3
Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 7A TO252
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AOD7N60 TO252.pdf
AOD7N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
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AOD7N60 TO252.pdf
AOD7N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
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AOD7N65 AOD7N65.pdf
AOD7N65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 6796 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.19 грн
10+70.81 грн
100+47.33 грн
500+34.98 грн
1000+31.95 грн
Мінімальне замовлення: 3
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AOD7N65 AOD7N65.pdf
AOD7N65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+31.72 грн
5000+28.38 грн
Мінімальне замовлення: 2500
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AOD7S60 AOD7S60.pdf
AOD7S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+48.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AOD7S60 AOD7S60.pdf
AOD7S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+181.44 грн
10+112.50 грн
100+76.76 грн
500+57.69 грн
1000+53.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOD7S65 AOD7S65.pdf
AOD7S65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
AOD7S65 AOD7S65.pdf
AOD7S65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.28 грн
10+107.36 грн
100+73.01 грн
500+54.73 грн
1000+50.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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