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BAS20-7-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS20DWQ-13 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS20DW-7 BAS20DW-7 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20Q-13-F BAS20Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20W-7-F DIODES INCORPORATED BAS19W-BAS21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Kind of package: reel; tape
Features of semiconductor devices: small signal
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D5V0L1B2S9-7 D5V0L1B2S9-7 DIODES INCORPORATED D5V0L1B2S9.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: SOD923
на замовлення 5082 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
45+9.05 грн
100+4.51 грн
500+3.01 грн
2500+2.84 грн
5000+2.51 грн
Мінімальне замовлення: 20
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B340Q-13-F DIODES INCORPORATED B320Q-B360Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
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B340BQ-13-F DIODES INCORPORATED B340BQ-B360BQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
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B340CE-13 DIODES INCORPORATED B320BE-B345BE-B320CE-B345CE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Type of diode: Schottky rectifying
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DMN3024SFG-13 DMN3024SFG-13 DIODES INCORPORATED DMN3024SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
на замовлення 2038 шт:
термін постачання 21-30 дні (днів)
16+28.40 грн
18+23.10 грн
100+17.90 грн
500+14.79 грн
1000+13.83 грн
Мінімальне замовлення: 16
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DXTN07060BFG-7 DIODES INCORPORATED DXTN07060BFG.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Case: PowerDI®3333-8
Mounting: SMD
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 0.9W
Collector-emitter voltage: 60V
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
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DMN3009LFV-7 DIODES INCORPORATED DMN3009LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3009LFVW-7 DIODES INCORPORATED DMN3009LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DFLZ5V1-7 DFLZ5V1-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
36+12.05 грн
48+8.39 грн
100+7.67 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
GBJ2508-F GBJ2508-F DIODES INCORPORATED GBJ25_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
4+122.29 грн
10+103.11 грн
15+95.91 грн
Мінімальне замовлення: 4
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74HCT138T16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949 Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: TSSOP16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
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74HCT138S16-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: SO16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
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ZXTN2007GTA DIODES INCORPORATED ZXTN2007G.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+33.83 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SMBJ64CA-13-F SMBJ64CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 289 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
25+15.99 грн
29+14.07 грн
100+8.95 грн
Мінімальне замовлення: 20
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SMBJ64A-13-F SMBJ64A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AS78L05MTR-G1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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AS78L05MTR-E1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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74AHC1G32SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02D20D3&compId=74AHC1G32.pdf?ci_sign=72e80d9ea8b3d9a1c3c63c8a61cb363053559b6a Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
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SMAJ16CA-13-F SMAJ16CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1541 шт:
термін постачання 21-30 дні (днів)
50+8.61 грн
53+7.67 грн
54+7.43 грн
100+6.29 грн
500+5.50 грн
1000+5.18 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SMAJ16CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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ZDT1048TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7FE10BB8720D2&compId=ZDT1048.pdf?ci_sign=a291fb71195cc7c7462bd2fb66def58f22b03396 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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AP7375-50W5-7 AP7375-50W5-7 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT25; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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ZXTN2010GTA ZXTN2010GTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=E1FC169892B643F1A303005056AB0C4F&compId=ZXTN2010G.pdf?ci_sign=143fb497309c35a3826e7a5e6c17b6080a4e4ee7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 828 шт:
термін постачання 21-30 дні (днів)
6+84.35 грн
10+56.99 грн
50+39.72 грн
100+34.21 грн
250+31.09 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMCJ6.0A-13-F SMCJ6.0A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BAS21TM-7 DIODES INCORPORATED BAS21TM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS21TWQ-7 DIODES INCORPORATED BAS21TWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS21W-13-F DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
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BAS21W-7-F DIODES INCORPORATED BAS19W-BAS21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
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AS431ARTR-G1 AS431ARTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C1AB087092143&compId=AS431.pdf?ci_sign=a71d39e20e36468a8e9880c718cc26c8f4b82af4 Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 343 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
36+11.35 грн
40+9.99 грн
48+8.47 грн
100+6.87 грн
250+6.31 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAV70WQ-7-F DIODES INCORPORATED BAV70W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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B260AE-13 B260AE-13 DIODES INCORPORATED B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SMA
Max. forward voltage: 0.65V
Leakage current: 14.5mA
на замовлення 2408 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
46+8.79 грн
100+5.91 грн
500+5.12 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
ZVN2106GTA ZVN2106GTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1AFF143200D6&compId=ZVN2106G.pdf?ci_sign=7b51c7ccae55720f0ba054de2fd8f4781294b68d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 635 шт:
термін постачання 21-30 дні (днів)
7+67.14 грн
8+52.11 грн
10+44.84 грн
25+35.33 грн
50+29.57 грн
100+25.34 грн
250+22.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSN20-7 BSN20-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 676 шт:
термін постачання 21-30 дні (днів)
23+18.94 грн
28+14.71 грн
31+12.95 грн
100+7.84 грн
500+5.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BSN20Q-7 BSN20Q-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 387 шт:
термін постачання 21-30 дні (днів)
20+22.38 грн
29+13.99 грн
36+11.29 грн
100+8.12 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ADTC144ECAQ-13 DIODES INCORPORATED ADTC144ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 10000pcs.
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ADTC144ECAQ-7 DIODES INCORPORATED ADTC144ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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ADTC144EUAQ-7 DIODES INCORPORATED ADTC144EUAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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ADTC144WCAQ-7 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC144ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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DDTC144ECAQ-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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DDTC144EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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DDTC144ELP-7 DIODES INCORPORATED ds31245.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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SMBJ48CA-13-F SMBJ48CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP7370-33SA-7 AP7370-33SA-7 DIODES INCORPORATED AP7370.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
8+55.09 грн
12+35.65 грн
14+29.25 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74LV14AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC420D3&compId=74LV14A.pdf?ci_sign=b4c26510490441bd14e229076e723e3754ee02e2 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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BZT52C5V1LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: X1-DFN1006-2
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
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BZT52C5V1TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523
Power dissipation: 0.3W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
Application: automotive industry
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BZT52C16T-7 BZT52C16T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 1870 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
93+4.32 грн
112+3.60 грн
178+2.25 грн
500+1.96 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BCV47QTC DIODES INCORPORATED BCV47Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+5.59 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAV170Q-13-F BAV170Q-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9BA108DD715E28&compId=BAV170.pdf?ci_sign=d789b826692d4d0dfdbd0c11bec8f055dea06976 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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BAV170T-7-F BAV170T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2719 шт:
термін постачання 21-30 дні (днів)
56+7.75 грн
65+6.23 грн
69+5.83 грн
80+5.00 грн
100+4.64 грн
500+3.83 грн
1000+3.48 грн
1500+3.29 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BAV170-7-F BAV170-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
на замовлення 3060 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
100+4.00 грн
125+3.20 грн
172+2.33 грн
1000+1.62 грн
3000+1.49 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBF170Q-13-F DIODES INCORPORATED MMBF170Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMBF170Q-7-F DIODES INCORPORATED MMBF170Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMBF170-13-F DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+1.72 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAS20-7-F Ds12004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS20DWQ-13 Ds30617.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS20DW-7 Ds30617.pdf
BAS20DW-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20Q-13-F Ds12004.pdf
BAS20Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20W-7-F BAS19W-BAS21W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Kind of package: reel; tape
Features of semiconductor devices: small signal
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D5V0L1B2S9-7 D5V0L1B2S9.pdf
D5V0L1B2S9-7
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: SOD923
на замовлення 5082 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
45+9.05 грн
100+4.51 грн
500+3.01 грн
2500+2.84 грн
5000+2.51 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
B340Q-13-F B320Q-B360Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
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B340BQ-13-F B340BQ-B360BQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Type of diode: Schottky rectifying
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B340CE-13 B320BE-B345BE-B320CE-B345CE.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Type of diode: Schottky rectifying
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DMN3024SFG-13 DMN3024SFG.pdf
DMN3024SFG-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
на замовлення 2038 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.40 грн
18+23.10 грн
100+17.90 грн
500+14.79 грн
1000+13.83 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DXTN07060BFG-7 DXTN07060BFG.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Case: PowerDI®3333-8
Mounting: SMD
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 0.9W
Collector-emitter voltage: 60V
Quantity in set/package: 2000pcs.
Kind of package: reel; tape
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DMN3009LFV-7 DMN3009LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3009LFVW-7 DMN3009LFVW.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DFLZ5V1-7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1
DFLZ5V1-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.05 грн
48+8.39 грн
100+7.67 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
GBJ2508-F GBJ25_ser.pdf
GBJ2508-F
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+122.29 грн
10+103.11 грн
15+95.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
74HCT138T16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F8C0D3&compId=74HCT138.pdf?ci_sign=50ca252984f838069f1cdd7bc362472180881949
Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: TSSOP16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
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74HCT138S16-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F7C0D3&compId=74HCT138.pdf?ci_sign=5049214ed0155bd6174afa4cdfbf87e78716a93a
Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: SO16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
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ZXTN2007GTA ZXTN2007G.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+33.83 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SMBJ64CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ64CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 289 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
25+15.99 грн
29+14.07 грн
100+8.95 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMBJ64A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ64A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AS78L05MTR-G1 AS78Lxx_Aug2013_DS.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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AS78L05MTR-E1 AS78Lxx_Aug2013_DS.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: AS78LXX
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74AHC1G32SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02D20D3&compId=74AHC1G32.pdf?ci_sign=72e80d9ea8b3d9a1c3c63c8a61cb363053559b6a
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
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SMAJ16CA-13-F SMAJ_ser.pdf
SMAJ16CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1541 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.61 грн
53+7.67 грн
54+7.43 грн
100+6.29 грн
500+5.50 грн
1000+5.18 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SMAJ16CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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ZDT1048TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7FE10BB8720D2&compId=ZDT1048.pdf?ci_sign=a291fb71195cc7c7462bd2fb66def58f22b03396
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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AP7375-50W5-7 AP7375.pdf
AP7375-50W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT25; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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ZXTN2010GTA pVersion=0046&contRep=ZT&docId=E1FC169892B643F1A303005056AB0C4F&compId=ZXTN2010G.pdf?ci_sign=143fb497309c35a3826e7a5e6c17b6080a4e4ee7
ZXTN2010GTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 828 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+84.35 грн
10+56.99 грн
50+39.72 грн
100+34.21 грн
250+31.09 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMCJ6.0A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ6.0A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BAS21TM-7 BAS21TM.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS21TWQ-7 BAS21TWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS21W-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
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BAS21W-7-F BAS19W-BAS21W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
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AS431ARTR-G1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C1AB087092143&compId=AS431.pdf?ci_sign=a71d39e20e36468a8e9880c718cc26c8f4b82af4
AS431ARTR-G1
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 343 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
36+11.35 грн
40+9.99 грн
48+8.47 грн
100+6.87 грн
250+6.31 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAV70WQ-7-F BAV70W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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B260AE-13 B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf
B260AE-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SMA
Max. forward voltage: 0.65V
Leakage current: 14.5mA
на замовлення 2408 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
46+8.79 грн
100+5.91 грн
500+5.12 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
ZVN2106GTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA4DA1AFF143200D6&compId=ZVN2106G.pdf?ci_sign=7b51c7ccae55720f0ba054de2fd8f4781294b68d
ZVN2106GTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 635 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.14 грн
8+52.11 грн
10+44.84 грн
25+35.33 грн
50+29.57 грн
100+25.34 грн
250+22.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSN20-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4
BSN20-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 676 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.94 грн
28+14.71 грн
31+12.95 грн
100+7.84 грн
500+5.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BSN20Q-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F932E7357D0748&compId=BSN20.pdf?ci_sign=cf5651a055afec12770548153c4b376545ed43d4
BSN20Q-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 387 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.38 грн
29+13.99 грн
36+11.29 грн
100+8.12 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ADTC144ECAQ-13 ADTC144ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 10000pcs.
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ADTC144ECAQ-7 ADTC144ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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ADTC144EUAQ-7 ADTC144EUAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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ADTC144WCAQ-7
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Quantity in set/package: 3000pcs.
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DDTC144ECA-7-F ds30329.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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DDTC144ECAQ-7-F ds30329.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 80
Quantity in set/package: 3000pcs.
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DDTC144EE-7-F ds30313.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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DDTC144ELP-7 ds31245.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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SMBJ48CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ48CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP7370-33SA-7 AP7370.pdf
AP7370-33SA-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.09 грн
12+35.65 грн
14+29.25 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74LV14AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC420D3&compId=74LV14A.pdf?ci_sign=b4c26510490441bd14e229076e723e3754ee02e2
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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BZT52C5V1LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: X1-DFN1006-2
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
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BZT52C5V1TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523
Power dissipation: 0.3W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
Application: automotive industry
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BZT52C16T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C16T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 1870 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
93+4.32 грн
112+3.60 грн
178+2.25 грн
500+1.96 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BCV47QTC BCV47Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+5.59 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAV170Q-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9BA108DD715E28&compId=BAV170.pdf?ci_sign=d789b826692d4d0dfdbd0c11bec8f055dea06976
BAV170Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 2pF
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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BAV170T-7-F ds30258.pdf
BAV170T-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2719 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.75 грн
65+6.23 грн
69+5.83 грн
80+5.00 грн
100+4.64 грн
500+3.83 грн
1000+3.48 грн
1500+3.29 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BAV170-7-F ds30234.pdf
BAV170-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
на замовлення 3060 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
100+4.00 грн
125+3.20 грн
172+2.33 грн
1000+1.62 грн
3000+1.49 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBF170Q-13-F MMBF170Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMBF170Q-7-F MMBF170Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMBF170-13-F
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+1.72 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
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