Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74024) > Сторінка 1214 з 1234
| Фото | Назва | Виробник | Інформація |
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AP2553W6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Case: SOT26 On-state resistance: 135mΩ Mounting: SMD Kind of package: reel; tape Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of output: P-Channel Type of integrated circuit: power switch Number of channels: 1 Output current: 2.1A Supply voltage: 2.7...5.5V DC |
на замовлення 704 шт: термін постачання 21-30 дні (днів) |
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ZXMN2B01FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; Idm: 11.8A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 11.8A |
на замовлення 2790 шт: термін постачання 21-30 дні (днів) |
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| 1N5819HW1-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SBR®; SMD; 40V; 1A; reel,tape Case: SOD123F Technology: SBR® Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Capacitance: 30pF Max. forward voltage: 0.51V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2DB1184Q-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 15W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 110MHz Pulsed collector current: 4.5A Quantity in set/package: 2500pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP3417CKTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A; SOT25 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.4V DC Output current: 1A Case: SOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 94% |
на замовлення 801 шт: термін постачання 21-30 дні (днів) |
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DDTA123JCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Current gain: 80 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 1151 шт: термін постачання 21-30 дні (днів) |
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| DMT4004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 82.2nC On-state resistance: 4mΩ Power dissipation: 2.6W Drain current: 21A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 100A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMG1013UW-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Drain current: -540mA Power dissipation: 0.31W On-state resistance: 1.5Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape |
на замовлення 6693 шт: термін постачання 21-30 дні (днів) |
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DMG1013T-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -6A Drain current: -0.33A Power dissipation: 0.27W On-state resistance: 0.7Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape |
на замовлення 2822 шт: термін постачання 21-30 дні (днів) |
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DMG1013UWQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Drain current: -540mA Power dissipation: 0.31W On-state resistance: 1.5Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Application: automotive industry |
на замовлення 2274 шт: термін постачання 21-30 дні (днів) |
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AP2552W6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Kind of package: reel; tape Mounting: SMD Kind of integrated circuit: high-side; USB switch Active logical level: low Kind of output: P-Channel Type of integrated circuit: power switch Case: SOT26 On-state resistance: 135mΩ Number of channels: 1 Output current: 2.1A Supply voltage: 2.7...5.5V DC |
на замовлення 2638 шт: термін постачання 21-30 дні (днів) |
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DMP2045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 0.8W Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Drain-source voltage: -20V Drain current: -3.1A On-state resistance: 90mΩ Gate-source voltage: ±8V |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| AP43771FBZ-13 | DIODES INCORPORATED |
Category: Integrated circuits - UnclassifiedDescription: AP43771FBZ-13 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| PAM2808BLBR | DIODES INCORPORATED |
Category: LED driversDescription: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Output current: 1.5A Case: SO8-EP Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZDT1053TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 75V Collector current: 5A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 20A Current gain: 300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MUR120-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 35A; DO41; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN2710UT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Mounting: SMD Type of transistor: N-MOSFET Case: SOT523 Polarisation: unipolar Gate charge: 0.6nC Kind of channel: enhancement Power dissipation: 0.52W On-state resistance: 0.75Ω Drain current: 0.7A Pulsed drain current: 5.6A Gate-source voltage: ±6V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMT35M4LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 90A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 14.9nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAV99Q-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAV99-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AS431HANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 2967 шт: термін постачання 21-30 дні (днів) |
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AS431HMBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SOT23R; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23R Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
на замовлення 1900 шт: термін постачання 21-30 дні (днів) |
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| AS431BZTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: Ammo Pack Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431ANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431BNTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431HMANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431AKTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431ANTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431ARTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431AZTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431AZTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431BKTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431BNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431BRTR-E1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431BRTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431BZTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: Ammo Pack Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431HAZTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431HBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431HBZTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; Ammo Pack; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: Ammo Pack Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431IANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431IAZTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431IBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AS431IBRTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZTX851STZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.2W Case: TO92 Current gain: 25...300 Mounting: THT Kind of package: Ammo Pack Frequency: 130MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZXTD2090E6TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 1A Power dissipation: 1.7W Case: SOT26 Pulsed collector current: 2A Current gain: 20...450 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 215MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2028UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 18nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCP55TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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BAS40-06Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS40-06Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.35W Reverse recovery time: 5ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS40-06T-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBTA06-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 3031 шт: термін постачання 21-30 дні (днів) |
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AP2552AW6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Kind of package: reel; tape Mounting: SMD Kind of integrated circuit: high-side; USB switch Active logical level: low Kind of output: P-Channel Type of integrated circuit: power switch Case: SOT26 On-state resistance: 135mΩ Number of channels: 1 Output current: 2.1A Supply voltage: 2.7...5.5V DC |
на замовлення 1336 шт: термін постачання 21-30 дні (днів) |
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| SBRT15U50SP5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A Type of diode: Schottky rectifying Case: PowerDI®5 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.47V Max. forward impulse current: 290A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SBRT15U50SP5-13D | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A Type of diode: Schottky rectifying Case: PowerDI®5 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.47V Leakage current: 170µA Max. forward impulse current: 290A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| SBRT15U50SP5-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A Type of diode: Schottky rectifying Case: PowerDI®5 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.47V Leakage current: 170µA Max. forward impulse current: 290A Kind of package: reel; tape |
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| DMP2200UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W Pulsed drain current: -8A Drain current: -1.2A Gate charge: 2.2nC Kind of package: 7 inch reel; tape On-state resistance: 0.65Ω Power dissipation: 1.58W Gate-source voltage: ±8V Kind of channel: enhancement Type of transistor: P-MOSFET Case: U-DFN1616-6 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V |
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|
GBU401 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A Max. off-state voltage: 100V Case: GBU Kind of package: tube Version: flat Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 4A Max. forward impulse current: 150A Leads: flat pin Features of semiconductor devices: glass passivated |
товару немає в наявності |
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|
SMAZ18-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Zener current: 56mA |
на замовлення 4205 шт: термін постачання 21-30 дні (днів) |
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| DXT3904-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.2W Case: SOT89 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 2500pcs. |
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В кошику од. на суму грн. | |||||||||||||||||
| ZXTP25100CFHTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 1.81W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT23 Current gain: 20...500 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 180MHz Power dissipation: 1.81W Pulsed collector current: 3A |
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В кошику од. на суму грн. |
| AP2553W6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Case: SOT26
On-state resistance: 135mΩ
Mounting: SMD
Kind of package: reel; tape
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Type of integrated circuit: power switch
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Case: SOT26
On-state resistance: 135mΩ
Mounting: SMD
Kind of package: reel; tape
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Type of integrated circuit: power switch
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
на замовлення 704 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.49 грн |
| 50+ | 16.41 грн |
| 75+ | 15.18 грн |
| 100+ | 14.37 грн |
| 300+ | 11.59 грн |
| 500+ | 10.61 грн |
| ZXMN2B01FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; Idm: 11.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; Idm: 11.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.8A
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.80 грн |
| 19+ | 21.71 грн |
| 100+ | 14.20 грн |
| 200+ | 12.65 грн |
| 500+ | 12.33 грн |
| 1N5819HW1-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SBR®; SMD; 40V; 1A; reel,tape
Case: SOD123F
Technology: SBR®
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 30pF
Max. forward voltage: 0.51V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SBR®; SMD; 40V; 1A; reel,tape
Case: SOD123F
Technology: SBR®
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 30pF
Max. forward voltage: 0.51V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 2DB1184Q-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 4.5A
Quantity in set/package: 2500pcs.
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 4.5A
Quantity in set/package: 2500pcs.
Application: automotive industry
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В кошику
од. на суму грн.
| AP3417CKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.4V DC
Output current: 1A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 94%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.4V DC
Output current: 1A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 94%
на замовлення 801 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.09 грн |
| 33+ | 12.41 грн |
| 100+ | 9.80 грн |
| 500+ | 9.14 грн |
| DDTA123JCA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 1151 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.43 грн |
| 55+ | 7.51 грн |
| 105+ | 3.91 грн |
| 500+ | 2.55 грн |
| 1000+ | 2.20 грн |
| DMT4004LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Drain current: 21A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82.2nC
On-state resistance: 4mΩ
Power dissipation: 2.6W
Drain current: 21A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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В кошику
од. на суму грн.
| DMG1013UW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 6693 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.82 грн |
| 44+ | 9.47 грн |
| 63+ | 6.48 грн |
| 100+ | 5.53 грн |
| 500+ | 3.98 грн |
| 1000+ | 3.52 грн |
| 3000+ | 2.95 грн |
| 6000+ | 2.92 грн |
| DMG1013T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -0.33A
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -0.33A
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 2822 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.19 грн |
| 55+ | 7.51 грн |
| 72+ | 5.71 грн |
| 121+ | 3.40 грн |
| 138+ | 2.97 грн |
| DMG1013UWQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Application: automotive industry
на замовлення 2274 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.82 грн |
| 37+ | 11.18 грн |
| 52+ | 7.98 грн |
| 100+ | 6.86 грн |
| 500+ | 4.95 грн |
| 1000+ | 4.38 грн |
| 1500+ | 4.10 грн |
| AP2552W6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: SOT26
On-state resistance: 135mΩ
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: SOT26
On-state resistance: 135mΩ
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
на замовлення 2638 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.20 грн |
| 18+ | 23.10 грн |
| 100+ | 16.82 грн |
| 500+ | 12.57 грн |
| 1000+ | 10.69 грн |
| DMP2045U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 90mΩ
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 90mΩ
Gate-source voltage: ±8V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 439.53 грн |
| AP43771FBZ-13 |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 48.17 грн |
| PAM2808BLBR |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
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| ZDT1053TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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од. на суму грн.
| MUR120-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 35A; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 35A; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 25ns
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В кошику
од. на суму грн.
| DMN2710UT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT523
Polarisation: unipolar
Gate charge: 0.6nC
Kind of channel: enhancement
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Drain current: 0.7A
Pulsed drain current: 5.6A
Gate-source voltage: ±6V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT523
Polarisation: unipolar
Gate charge: 0.6nC
Kind of channel: enhancement
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Drain current: 0.7A
Pulsed drain current: 5.6A
Gate-source voltage: ±6V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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В кошику
од. на суму грн.
| DMT35M4LFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| BAV99Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAV99-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| AS431HANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 2967 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.07 грн |
| 40+ | 10.29 грн |
| 46+ | 9.06 грн |
| 54+ | 7.59 грн |
| 100+ | 6.20 грн |
| 250+ | 5.71 грн |
| 500+ | 5.39 грн |
| AS431HMBNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23R; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23R
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23R; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23R
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
на замовлення 1900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.70 грн |
| 33+ | 12.57 грн |
| 38+ | 10.94 грн |
| 45+ | 9.22 грн |
| 100+ | 7.43 грн |
| 250+ | 6.78 грн |
| 500+ | 6.37 грн |
| AS431BZTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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| AS431ANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431BNTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431HMANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431AKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431ANTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431ARTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431AZTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431AZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431BKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431BNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431BRTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431BRTR-G1 |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431BZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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| AS431HAZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431HBNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431HBZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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| AS431IANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431IAZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431IBNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| AS431IBRTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| ZTX851STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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| ZXTD2090E6TA |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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| DMN2028UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| BCP55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.37 грн |
| 32+ | 12.98 грн |
| BAS40-06Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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| BAS40-06Q-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
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| BAS40-06T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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| MMBTA06-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 3031 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.43 грн |
| 53+ | 7.84 грн |
| 80+ | 5.11 грн |
| 100+ | 4.22 грн |
| 500+ | 2.78 грн |
| 1000+ | 2.38 грн |
| 1500+ | 2.20 грн |
| 3000+ | 1.93 грн |
| AP2552AW6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: SOT26
On-state resistance: 135mΩ
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: SOT26
On-state resistance: 135mΩ
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.61 грн |
| 22+ | 19.26 грн |
| 24+ | 17.14 грн |
| 28+ | 14.69 грн |
| 100+ | 12.98 грн |
| SBRT15U50SP5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 290A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 290A
Kind of package: reel; tape
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| SBRT15U50SP5-13D |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
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од. на суму грн.
| SBRT15U50SP5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
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| DMP2200UFCL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
Kind of package: 7 inch reel; tape
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN1616-6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 2.2nC
Kind of package: 7 inch reel; tape
On-state resistance: 0.65Ω
Power dissipation: 1.58W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN1616-6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
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| GBU401 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Max. off-state voltage: 100V
Case: GBU
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 4A
Max. forward impulse current: 150A
Leads: flat pin
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Max. off-state voltage: 100V
Case: GBU
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 4A
Max. forward impulse current: 150A
Leads: flat pin
Features of semiconductor devices: glass passivated
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| SMAZ18-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Zener current: 56mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 56mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Zener current: 56mA
на замовлення 4205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.10 грн |
| 30+ | 14.04 грн |
| 50+ | 10.29 грн |
| 100+ | 8.98 грн |
| 250+ | 7.59 грн |
| 500+ | 6.69 грн |
| 1000+ | 5.88 грн |
| DXT3904-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 2500pcs.
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| ZXTP25100CFHTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.81W
Pulsed collector current: 3A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.81W
Pulsed collector current: 3A
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