Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74567) > Сторінка 1213 з 1243
Фото | Назва | Виробник | Інформація |
Доступність |
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ZRB500F03TA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±3% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 15mA |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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BAS19-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 120V; 0.4A; 50ns; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT23 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAS19W-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 120V; 0.4A; 50ns; SOT323; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT323 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
APX803L05-35SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Mounting: SMD Active logical level: low Kind of RESET output: open drain Case: SOT23 Kind of integrated circuit: power on reset monitor (PoR) Kind of package: reel; tape Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C DC supply current: 1µA Maximum output current: 20mA Delay time: 55ms Supply voltage: 0.9...5.5V DC Threshold on-voltage: 3.5V Integrated circuit features: ±1,5% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMTH4M70SPGWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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ZVP4525GQTA | DIODES INCORPORATED |
![]() Description: ZVP4525GQTA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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S1M-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape Capacitance: 10pF Max. forward impulse current: 30A |
на замовлення 5056 шт: термін постачання 21-30 дні (днів) |
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AH49EZ3-G1 | DIODES INCORPORATED |
![]() Description: Sensor: Hall Type of sensor: Hall |
на замовлення 60000 шт: термін постачання 21-30 дні (днів) |
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SMCJ33AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SMCJ85CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 10.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMN2310UT-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2710UT-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2991UT-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAV23SQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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SMAJ150A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 1.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2985 шт: термін постачання 21-30 дні (днів) |
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SMBJ7.0CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.78...8.95V Max. forward impulse current: 50A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.4mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1717 шт: термін постачання 21-30 дні (днів) |
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SMBJ7.5CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1640 шт: термін постачання 21-30 дні (днів) |
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SMAJ40CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZT52C33-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 33V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 4636 шт: термін постачання 21-30 дні (днів) |
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DDTA114ECAQ-13-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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MMSZ5246B-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B0520WS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Capacitance: 58pF Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 235mW |
на замовлення 252 шт: термін постачання 21-30 дні (днів) |
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BSS123-13-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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BZX84C10W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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BC847B-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847BQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Pulsed collector current: 0.2A Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
GBU808-01-LS | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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B140-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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BZT52C16-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 16V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 3921 шт: термін постачання 21-30 дні (днів) |
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GBU606 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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DMNH6010SCTB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB Mounting: SMD Power dissipation: 5W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 94A Pulsed drain current: 532A Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO263AB Polarisation: unipolar Gate charge: 46nC Kind of package: 13 inch reel; tape On-state resistance: 10mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FZT651QTC | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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SMBJ85CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85V Breakdown voltage: 94.4...108.2V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SMBJ12CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 117000 шт: термін постачання 21-30 дні (днів) |
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DMG2302UK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Case: SOT23 Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Kind of package: 7 inch reel; tape On-state resistance: 90mΩ Power dissipation: 0.66W Drain current: 2.2A Gate-source voltage: ±12V Pulsed drain current: 12A Drain-source voltage: 20V |
на замовлення 2619 шт: термін постачання 21-30 дні (днів) |
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DMN2056U-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23 Case: SOT23 Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: 7 inch reel; tape On-state resistance: 45mΩ Power dissipation: 0.94W Drain current: 3.7A Gate-source voltage: ±8V Drain-source voltage: 20V |
на замовлення 2172 шт: термін постачання 21-30 дні (днів) |
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DMG2302UKQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Polarisation: unipolar Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: 7 inch reel; tape Gate charge: 1.4nC On-state resistance: 0.12Ω Power dissipation: 1.1W Drain current: 2.2A Gate-source voltage: ±12V Pulsed drain current: 12A Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG2302UK-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: 13 inch reel; tape Gate charge: 1.4nC On-state resistance: 0.12Ω Power dissipation: 1.1W Drain current: 2.2A Gate-source voltage: ±12V Pulsed drain current: 12A Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG2302UKQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Polarisation: unipolar Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: 13 inch reel; tape Gate charge: 1.4nC On-state resistance: 0.12Ω Power dissipation: 1.1W Drain current: 2.2A Gate-source voltage: ±12V Pulsed drain current: 12A Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG2302UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Case: SOT23 Mounting: SMD Polarisation: unipolar Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: 7 inch reel; tape Gate charge: 4.3nC On-state resistance: 45mΩ Power dissipation: 1.2W Drain current: 3.8A Gate-source voltage: ±8V Pulsed drain current: 25A Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3065LW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.77W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 461 шт: термін постачання 21-30 дні (днів) |
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DDTC114ELP-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 10...100 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1SMB5929B-13 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 1328 шт: термін постачання 21-30 дні (днів) |
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SBR0330CW-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape Mounting: SMD Load current: 0.3A Max. off-state voltage: 30V Semiconductor structure: common cathode; double Kind of package: reel; tape Technology: SBR® Features of semiconductor devices: small signal Case: SOT323 Type of diode: switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN3042L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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SMBJ18A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMBJ18AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DDZ9678-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 1.8V |
на замовлення 785 шт: термін постачання 21-30 дні (днів) |
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B0540WS-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 125pF Max. forward voltage: 0.285V Max. forward impulse current: 3A Kind of package: reel; tape Power dissipation: 235mW |
на замовлення 3802 шт: термін постачання 21-30 дні (днів) |
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BZX84C6V8Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S5BC-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A Kind of package: reel; tape Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Capacitance: 40pF Max. forward voltage: 1.15V Load current: 5A Max. forward impulse current: 100A Max. off-state voltage: 100V Case: SMC |
на замовлення 2123 шт: термін постачання 21-30 дні (днів) |
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B1100LB-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Case: SMB Mounting: SMD Type of diode: Schottky rectifying Capacitance: 0.1nF Leakage current: 5mA Max. forward voltage: 0.75V Load current: 1A Max. forward impulse current: 50A Max. off-state voltage: 100V Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 1883 шт: термін постачання 21-30 дні (днів) |
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B1100B-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Case: SMB Mounting: SMD Type of diode: Schottky rectifying Capacitance: 80pF Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 100V Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 546 шт: термін постачання 21-30 дні (днів) |
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B1100BQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Case: SMB Mounting: SMD Type of diode: Schottky rectifying Capacitance: 80pF Leakage current: 5mA Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 100V Kind of package: reel; tape Application: automotive industry Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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B1100Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape Case: SMA Mounting: SMD Type of diode: Schottky rectifying Capacitance: 80pF Leakage current: 5mA Max. forward voltage: 0.79V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 100V Kind of package: reel; tape Application: automotive industry Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TB1100H-13-F | DIODES INCORPORATED |
![]() Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional Case: SMB Mounting: SMD Type of thyristor: TSS Max. forward impulse current: 100A Max. off-state voltage: 90V Breakover voltage: 130V Kind of package: reel; tape Semiconductor structure: bidirectional |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DPBT8105-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 2A Current gain: 30...300 Collector-emitter voltage: 60V Quantity in set/package: 3000pcs. Frequency: 150MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAS21T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT523 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP7361C-18SP-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1% Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...85°C Voltage drop: 0.7V Output voltage: 1.8V Input voltage: 2.2...6V Output current: 1A Tolerance: ±1% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7361C Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AP7362A-33SP-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.24V Output voltage: 3.3V Output current: 1.5A Case: SO8-EP Mounting: SMD Manufacturer series: AP7362 Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 2.2...6V Integrated circuit features: shutdown mode control input Tolerance: ±1.5% |
товару немає в наявності |
В кошику од. на суму грн. |
ZRB500F03TA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
на замовлення 193 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.65 грн |
10+ | 46.00 грн |
25+ | 40.69 грн |
30+ | 39.82 грн |
41+ | 23.12 грн |
111+ | 21.85 грн |
BAS19-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.4A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.4A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
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В кошику
од. на суму грн.
BAS19W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.4A; 50ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.4A; 50ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Kind of package: reel; tape
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В кошику
од. на суму грн.
APX803L05-35SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Case: SOT23
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 55ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Case: SOT23
Kind of integrated circuit: power on reset monitor (PoR)
Kind of package: reel; tape
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
DC supply current: 1µA
Maximum output current: 20mA
Delay time: 55ms
Supply voltage: 0.9...5.5V DC
Threshold on-voltage: 3.5V
Integrated circuit features: ±1,5% accuracy
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В кошику
од. на суму грн.
DMTH4M70SPGWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 140.68 грн |
ZVP4525GQTA |
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на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 26.86 грн |
S1M-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 10pF
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 10pF
Max. forward impulse current: 30A
на замовлення 5056 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.79 грн |
49+ | 8.15 грн |
68+ | 5.86 грн |
100+ | 5.04 грн |
427+ | 2.18 грн |
1174+ | 2.06 грн |
5000+ | 2.00 грн |
AH49EZ3-G1 |
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на замовлення 60000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 18.93 грн |
SMCJ33AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.95 грн |
SMCJ85CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
DMN2310UT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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В кошику
од. на суму грн.
DMN2710UT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
DMN2991UT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
BAV23SQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.34 грн |
SMAJ150A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
26+ | 15.36 грн |
30+ | 13.30 грн |
40+ | 10.07 грн |
100+ | 6.30 грн |
210+ | 4.47 грн |
576+ | 4.22 грн |
SMBJ7.0CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1717 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
26+ | 15.36 грн |
29+ | 13.78 грн |
100+ | 8.95 грн |
119+ | 7.84 грн |
326+ | 7.44 грн |
500+ | 7.13 грн |
SMBJ7.5CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
25+ | 16.15 грн |
28+ | 14.57 грн |
100+ | 10.45 грн |
119+ | 7.84 грн |
326+ | 7.44 грн |
1000+ | 7.28 грн |
SMAJ40CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
BZT52C33-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 33V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 33V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 4636 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 8.04 грн |
65+ | 6.18 грн |
72+ | 5.54 грн |
86+ | 4.66 грн |
116+ | 3.42 грн |
500+ | 2.34 грн |
711+ | 1.31 грн |
1952+ | 1.24 грн |
DDTA114ECAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.69 грн |
MMSZ5246B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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од. на суму грн.
B0520WS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 58pF
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 235mW
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 58pF
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 235mW
на замовлення 252 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.64 грн |
42+ | 9.58 грн |
100+ | 6.96 грн |
BSS123-13-F |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.50 грн |
BZX84C10W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
53+ | 7.60 грн |
100+ | 4.20 грн |
395+ | 2.36 грн |
1085+ | 2.23 грн |
BC847B-13-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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BC847BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Application: automotive industry
Quantity in set/package: 3000pcs.
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GBU808-01-LS |
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 860 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
320+ | 19.52 грн |
B140-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.64 грн |
42+ | 9.58 грн |
53+ | 7.55 грн |
100+ | 6.78 грн |
341+ | 2.72 грн |
938+ | 2.57 грн |
BZT52C16-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 3921 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
81+ | 4.91 грн |
117+ | 3.39 грн |
139+ | 2.85 грн |
670+ | 1.39 грн |
1842+ | 1.31 грн |
3000+ | 1.27 грн |
GBU606 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 113.40 грн |
5+ | 82.02 грн |
10+ | 53.12 грн |
20+ | 46.39 грн |
DMNH6010SCTB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
Kind of package: 13 inch reel; tape
On-state resistance: 10mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
Kind of package: 13 inch reel; tape
On-state resistance: 10mΩ
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FZT651QTC |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 17.90 грн |
SMBJ85CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.
SMBJ12CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 117000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.66 грн |
DMG2302UK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 90mΩ
Power dissipation: 0.66W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 90mΩ
Power dissipation: 0.66W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
на замовлення 2619 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
43+ | 9.34 грн |
62+ | 6.46 грн |
100+ | 5.53 грн |
245+ | 3.81 грн |
672+ | 3.60 грн |
DMN2056U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 45mΩ
Power dissipation: 0.94W
Drain current: 3.7A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
On-state resistance: 45mΩ
Power dissipation: 0.94W
Drain current: 3.7A
Gate-source voltage: ±8V
Drain-source voltage: 20V
на замовлення 2172 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
27+ | 14.88 грн |
50+ | 10.13 грн |
100+ | 8.55 грн |
143+ | 6.49 грн |
393+ | 6.18 грн |
500+ | 5.94 грн |
DMG2302UKQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
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DMG2302UK-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 13 inch reel; tape
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 13 inch reel; tape
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
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DMG2302UKQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 13 inch reel; tape
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 13 inch reel; tape
Gate charge: 1.4nC
On-state resistance: 0.12Ω
Power dissipation: 1.1W
Drain current: 2.2A
Gate-source voltage: ±12V
Pulsed drain current: 12A
Drain-source voltage: 20V
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DMG2302UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
Gate charge: 4.3nC
On-state resistance: 45mΩ
Power dissipation: 1.2W
Drain current: 3.8A
Gate-source voltage: ±8V
Pulsed drain current: 25A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: 7 inch reel; tape
Gate charge: 4.3nC
On-state resistance: 45mΩ
Power dissipation: 1.2W
Drain current: 3.8A
Gate-source voltage: ±8V
Pulsed drain current: 25A
Drain-source voltage: 20V
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од. на суму грн.
DMN3065LW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 461 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.84 грн |
21+ | 19.63 грн |
50+ | 14.01 грн |
100+ | 12.03 грн |
155+ | 6.02 грн |
425+ | 5.70 грн |
DDTC114ELP-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 10...100
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 10...100
Quantity in set/package: 3000pcs.
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1SMB5929B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 1328 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
19+ | 20.90 грн |
22+ | 18.45 грн |
100+ | 11.72 грн |
171+ | 5.46 грн |
470+ | 5.15 грн |
SBR0330CW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 30V; 0.3A; SOT323; SBR®; reel,tape
Mounting: SMD
Load current: 0.3A
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Technology: SBR®
Features of semiconductor devices: small signal
Case: SOT323
Type of diode: switching
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DMN3042L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
29+ | 13.78 грн |
34+ | 11.72 грн |
50+ | 7.92 грн |
100+ | 6.81 грн |
167+ | 5.54 грн |
460+ | 5.23 грн |
SMBJ18A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ18AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DDZ9678-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
на замовлення 785 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
50+ | 7.92 грн |
68+ | 5.89 грн |
107+ | 3.72 грн |
500+ | 2.58 грн |
555+ | 1.68 грн |
B0540WS-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.285V
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 125pF
Max. forward voltage: 0.285V
Max. forward impulse current: 3A
Kind of package: reel; tape
Power dissipation: 235mW
на замовлення 3802 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
33+ | 12.27 грн |
41+ | 9.88 грн |
100+ | 6.96 грн |
370+ | 2.52 грн |
1018+ | 2.38 грн |
BZX84C6V8Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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S5BC-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Case: SMC
на замовлення 2123 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
20+ | 20.27 грн |
50+ | 16.15 грн |
87+ | 10.77 грн |
237+ | 10.21 грн |
B1100LB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 0.1nF
Leakage current: 5mA
Max. forward voltage: 0.75V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 0.1nF
Leakage current: 5mA
Max. forward voltage: 0.75V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 1883 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.17 грн |
28+ | 14.65 грн |
50+ | 11.32 грн |
100+ | 10.21 грн |
137+ | 6.81 грн |
376+ | 6.41 грн |
B1100B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 80pF
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 80pF
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 546 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
30+ | 13.54 грн |
100+ | 11.48 грн |
163+ | 5.70 грн |
447+ | 5.38 грн |
B1100BQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 80pF
Leakage current: 5mA
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 80pF
Leakage current: 5mA
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
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B1100Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 80pF
Leakage current: 5mA
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 80pF
Leakage current: 5mA
Max. forward voltage: 0.79V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
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TB1100H-13-F |
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Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. forward impulse current: 100A
Max. off-state voltage: 90V
Breakover voltage: 130V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. forward impulse current: 100A
Max. off-state voltage: 90V
Breakover voltage: 130V
Kind of package: reel; tape
Semiconductor structure: bidirectional
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DPBT8105-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
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BAS21T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT523
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT523
Kind of package: reel; tape
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AP7361C-18SP-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Voltage drop: 0.7V
Output voltage: 1.8V
Input voltage: 2.2...6V
Output current: 1A
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Voltage drop: 0.7V
Output voltage: 1.8V
Input voltage: 2.2...6V
Output current: 1A
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
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AP7362A-33SP-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 3.3V
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Manufacturer series: AP7362
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Tolerance: ±1.5%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 3.3V
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Manufacturer series: AP7362
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Tolerance: ±1.5%
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