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TB1100H-13-F DIODES INCORPORATED ds30360.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. off-state voltage: 90V
Max. forward impulse current: 100A
Breakover voltage: 130V
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ZVN2120GTA DIODES INCORPORATED ZVN2120G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 DIODES INCORPORATED ds30793.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
13+36.47 грн
16+27.77 грн
18+24.89 грн
100+16.76 грн
500+12.87 грн
1000+12.70 грн
Мінімальне замовлення: 13
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74HCT126T14-13 DIODES INCORPORATED 74HCT126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Number of channels: 4
Kind of output: 3-state
Kind of integrated circuit: buffer
Technology: CMOS; TTL
Type of integrated circuit: digital
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AP2210N-5.0TRG1 AP2210N-5.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1296 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
42+10.16 грн
48+8.97 грн
56+7.62 грн
63+6.77 грн
100+6.18 грн
250+5.59 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2210N-4.0TRG1AP2210N-4.0TRG1
 AP2210N-4.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1899 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
44+9.82 грн
49+8.72 грн
57+7.45 грн
100+6.09 грн
250+5.50 грн
500+5.42 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2210N-3.0TRG1 AP2210N-3.0TRG1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
44+9.82 грн
49+8.72 грн
57+7.45 грн
100+6.09 грн
250+5.67 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2210N-2.5TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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AP2210N-3.0TRE1 DIODES INCORPORATED AP2210.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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BZT585B20T-7 BZT585B20T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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SMF4L24A-7 DIODES INCORPORATED SMF4Lxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
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AP2213D-3.3TRE1 DIODES INCORPORATED AP2213.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO252; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 2.5...18V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2213
Kind of package: reel; tape
Case: TO252
Type of integrated circuit: voltage regulator
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AP2213H-3.3TRG1 AP2213H-3.3TRG1 DIODES INCORPORATED AP2213.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.5...18V
Manufacturer series: AP2213
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DGD2190MS8-13 DIODES INCORPORATED DGD2190M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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DGD2103MS8-13 DGD2103MS8-13 DIODES INCORPORATED DGD2103M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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DGD2304S8-13 DGD2304S8-13 DIODES INCORPORATED DGD2304.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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DDZ9688-7 DDZ9688-7 DIODES INCORPORATED DDZ9689-7.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
на замовлення 202 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
61+6.94 грн
107+3.96 грн
200+3.47 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DMN2044UCB4-7DMN2044UCB4-7
 DMN2044UCB4-7 DIODES INCORPORATED DMN2044UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: U-WLB1010-4
Gate charge: 47nC
On-state resistance: 70mΩ
Power dissipation: 1.18W
Drain current: 3.6A
Gate-source voltage: ±8V
Pulsed drain current: 16A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
9+56.52 грн
13+32.59 грн
100+21.08 грн
500+16.08 грн
1000+14.56 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
APR3415MTR-G1 DIODES INCORPORATED APR3415.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; SO8; flyback; 3.3÷6V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 3.3...6V
Kind of package: reel; tape
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DMN2005LP4K-7B DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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DMN2005LP4K-7 DIODES INCORPORATED ds30799.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 0.4W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS70DW-04Q-7-F BAS70DW-04Q-7-F DIODES INCORPORATED BAS70TWQ_BAS70DW-04Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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ZHCS350TA ZHCS350TA DIODES INCORPORATED ZHCS350.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.35A; 1.6ns; 330mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 3.3pF
Max. forward voltage: 0.405V
Max. forward impulse current: 0.91A
Reverse recovery time: 1.6ns
Kind of package: reel; tape
Power dissipation: 0.33W
на замовлення 2032 шт:
термін постачання 14-30 дні (днів)
28+16.41 грн
31+14.05 грн
32+13.63 грн
50+12.27 грн
100+11.77 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MMBTA14-7-F MMBTA14-7-F DIODES INCORPORATED MMBTA13-7-F.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Quantity in set/package: 3000pcs.
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MMBTA64-7-F DIODES INCORPORATED ds30055.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Current gain: 10000...20000
Frequency: 125MHz
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ZMR500QFTA DIODES INCORPORATED ZMR-Q.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Application: automotive industry
Input voltage: 7...25V
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ZLLS400TA ZLLS400TA DIODES INCORPORATED ZLLS400.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.37W
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DMN3033LSDQ-13 DMN3033LSDQ-13 DIODES INCORPORATED DMN3033LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN3033LSD-13 DMN3033LSD-13 DIODES INCORPORATED ds31262.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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ZLDO1117QG33TA DIODES INCORPORATED ZLDO1117Q.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
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ZLDO1117QK33TC DIODES INCORPORATED ZLDO1117Q.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
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DMG4466SSS-13 DMG4466SSS-13 DIODES INCORPORATED ds32137.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
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DMG4466SSSL-13 DMG4466SSSL-13 DIODES INCORPORATED ds32244.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
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DMC3028LSDX-13 DMC3028LSDX-13 DIODES INCORPORATED DMC3028LSDX-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.027/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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74LVC2G126HD4-7 DIODES INCORPORATED 74LVC2G126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74LVC2G125HD4-7 DIODES INCORPORATED 74LVC2G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Mounting: SMD
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of integrated circuit: buffer
Kind of output: 3-state
Family: LVC
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN2010-8
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74LVC2G125RA3-7 DIODES INCORPORATED 74LVC2G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; -40÷150°C; LVC
Mounting: SMD
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of integrated circuit: buffer
Kind of output: 3-state
Family: LVC
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1210-8
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74LVC126AS14-13 74LVC126AS14-13 DIODES INCORPORATED 74LVC126AS14-13.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; LVC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Technology: CMOS
Manufacturer series: LVC
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74LVC126AT14-13 DIODES INCORPORATED 74LVC126A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Family: LVC
Technology: CMOS
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BCR420UW6Q-7 BCR420UW6Q-7 DIODES INCORPORATED BCR420UW6Q-BCR421UW6Q.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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BCR420UW6-7 BCR420UW6-7 DIODES INCORPORATED BCR420UW6-BCR421UW6.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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BCR420UFD-7 DIODES INCORPORATED BCR420UFD.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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BCR420UFDQ-7 DIODES INCORPORATED BCR420UFDQ-BCR421UFDQ.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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SMBJ8.5A-13-F SMBJ8.5A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 479 шт:
термін постачання 14-30 дні (днів)
25+18.23 грн
30+14.39 грн
35+12.36 грн
44+9.65 грн
100+6.60 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
74LVC08AS14-13 DIODES INCORPORATED 74LVC08A.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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74LVC08AT14-13 DIODES INCORPORATED 74LVC08A.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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ZDT6790TA ZDT6790TA DIODES INCORPORATED ZDT6790.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45/40V; 2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45/40V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 400
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 937 шт:
термін постачання 14-30 дні (днів)
4+115.78 грн
10+69.33 грн
50+53.33 грн
100+47.83 грн
500+37.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DCX114YU-7-F DCX114YU-7-F DIODES INCORPORATED DCX_XXXX_U.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...600
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1030 шт:
термін постачання 14-30 дні (днів)
23+20.06 грн
44+9.65 грн
83+5.15 грн
104+4.10 грн
250+3.34 грн
500+2.90 грн
1000+2.75 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
DDTC123YCA-7-F DDTC123YCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
на замовлення 1400 шт:
термін постачання 14-30 дні (днів)
63+7.29 грн
99+4.32 грн
145+2.93 грн
500+2.40 грн
1000+2.23 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SMAJ24A-13-F SMAJ24A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 11960 шт:
термін постачання 14-30 дні (днів)
28+16.41 грн
35+12.36 грн
40+10.75 грн
57+7.55 грн
100+6.55 грн
250+5.57 грн
1000+4.68 грн
3000+4.38 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMAJ24AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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BAV99WQ-7-F DIODES INCORPORATED BAV99W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.3A
Features of semiconductor devices: small signal
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AP7312-1833W6-7 AP7312-1833W6-7 DIODES INCORPORATED Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; SOT26; SMD; AP7312
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 0.15A
Output voltage: 1.8/3.3V DC
Voltage drop: 0.3V
Number of channels: 2
Tolerance: ±2%
Input voltage: 2...6V
Manufacturer series: AP7312
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
14+34.64 грн
19+22.94 грн
25+20.65 грн
100+17.86 грн
250+16.42 грн
500+16.25 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MMSTA13-7-F DIODES INCORPORATED ds30165.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SOT323
Current gain: 5000...10000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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ZVP2120GTA DIODES INCORPORATED ZVP2120G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -200mA; Idm: -1.2A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -200mA
Pulsed drain current: -1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZVP2106ASTZ DIODES INCORPORATED ZVP2106A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -280mA; Idm: -4A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.28A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: -4A
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ZVP2120ASTZ DIODES INCORPORATED ZVP2120A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -120mA; Idm: -1.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.12A
Pulsed drain current: -1.2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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ZVP2110GTA DIODES INCORPORATED ZVP2110G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -310mA; Idm: -3A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -310mA
Pulsed drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMTH6004SK3-13 DIODES INCORPORATED DMTH6004SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 150A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 95.4nC
Pulsed drain current: 150A
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DGD0506AFN-7 DIODES INCORPORATED DGD0506A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
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TB1100H-13-F ds30360.pdf
Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 100A; bidirectional; UBO: 130V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of thyristor: TSS
Max. off-state voltage: 90V
Max. forward impulse current: 100A
Breakover voltage: 130V
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ZVN2120GTA ZVN2120G.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PD3S120L-7 ds30793.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Capacitance: 49pF
Leakage current: 30mA
Max. forward voltage: 0.42V
Load current: 1A
Max. forward impulse current: 33A
Max. off-state voltage: 20V
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.47 грн
16+27.77 грн
18+24.89 грн
100+16.76 грн
500+12.87 грн
1000+12.70 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
74HCT126T14-13 74HCT126.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Number of channels: 4
Kind of output: 3-state
Kind of integrated circuit: buffer
Technology: CMOS; TTL
Type of integrated circuit: digital
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AP2210N-5.0TRG1 AP2210.pdf
AP2210N-5.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1296 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.76 грн
42+10.16 грн
48+8.97 грн
56+7.62 грн
63+6.77 грн
100+6.18 грн
250+5.59 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2210N-4.0TRG1 AP2210.pdf
AP2210N-4.0TRG1AP2210N-4.0TRG1
AP2210N-4.0TRG1AP2210N-4.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4V; 0.3A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 4V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...13V
на замовлення 1899 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.76 грн
44+9.82 грн
49+8.72 грн
57+7.45 грн
100+6.09 грн
250+5.50 грн
500+5.42 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2210N-3.0TRG1 AP2210.pdf
AP2210N-3.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2210
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.76 грн
44+9.82 грн
49+8.72 грн
57+7.45 грн
100+6.09 грн
250+5.67 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP2210N-2.5TRE1 AP2210.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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AP2210N-3.0TRE1 AP2210.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT23; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
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BZT585B20T-7 BZT585BxVxT.pdf
BZT585B20T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 20V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±2%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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SMF4L24A-7 SMF4Lxx.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
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AP2213D-3.3TRE1 AP2213.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO252; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 2.5...18V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP2213
Kind of package: reel; tape
Case: TO252
Type of integrated circuit: voltage regulator
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AP2213H-3.3TRG1 AP2213.pdf
AP2213H-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Output current: 0.5A
Voltage drop: 0.7V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.5...18V
Manufacturer series: AP2213
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DGD2190MS8-13 DGD2190M.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4.5...4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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DGD2103MS8-13 DGD2103M.pdf
DGD2103MS8-13
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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DGD2304S8-13 DGD2304.pdf
DGD2304S8-13
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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DDZ9688-7 DDZ9689-7.pdf
DDZ9688-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
на замовлення 202 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.12 грн
61+6.94 грн
107+3.96 грн
200+3.47 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DMN2044UCB4-7 DMN2044UCB4.pdf
DMN2044UCB4-7DMN2044UCB4-7
DMN2044UCB4-7DMN2044UCB4-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: U-WLB1010-4
Gate charge: 47nC
On-state resistance: 70mΩ
Power dissipation: 1.18W
Drain current: 3.6A
Gate-source voltage: ±8V
Pulsed drain current: 16A
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+56.52 грн
13+32.59 грн
100+21.08 грн
500+16.08 грн
1000+14.56 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
APR3415MTR-G1 APR3415.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; SO8; flyback; 3.3÷6V
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Supply voltage: 3.3...6V
Kind of package: reel; tape
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DMN2005LP4K-7B
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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DMN2005LP4K-7 ds30799.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 0.4W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS70DW-04Q-7-F BAS70TWQ_BAS70DW-04Q.pdf
BAS70DW-04Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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ZHCS350TA ZHCS350.pdf
ZHCS350TA
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.35A; 1.6ns; 330mW
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 3.3pF
Max. forward voltage: 0.405V
Max. forward impulse current: 0.91A
Reverse recovery time: 1.6ns
Kind of package: reel; tape
Power dissipation: 0.33W
на замовлення 2032 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.41 грн
31+14.05 грн
32+13.63 грн
50+12.27 грн
100+11.77 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MMBTA14-7-F MMBTA13-7-F.pdf
MMBTA14-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Quantity in set/package: 3000pcs.
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MMBTA64-7-F ds30055.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Current gain: 10000...20000
Frequency: 125MHz
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ZMR500QFTA ZMR-Q.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 5V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Application: automotive industry
Input voltage: 7...25V
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ZLLS400TA ZLLS400.pdf
ZLLS400TA
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.37W
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DMN3033LSDQ-13 DMN3033LSDQ.pdf
DMN3033LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN3033LSD-13 ds31262.pdf
DMN3033LSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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ZLDO1117QG33TA ZLDO1117Q.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
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ZLDO1117QK33TC ZLDO1117Q.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: ZLDO1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 4.7...12V
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DMG4466SSS-13 ds32137.pdf
DMG4466SSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
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DMG4466SSSL-13 ds32244.pdf
DMG4466SSSL-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 33mΩ
Power dissipation: 1.42W
Drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: 13 inch reel; tape
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DMC3028LSDX-13 DMC3028LSDX-13.pdf
DMC3028LSDX-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.027/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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74LVC2G126HD4-7 74LVC2G126.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74LVC2G125HD4-7 74LVC2G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Mounting: SMD
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of integrated circuit: buffer
Kind of output: 3-state
Family: LVC
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN2010-8
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74LVC2G125RA3-7 74LVC2G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1210-8; -40÷150°C; LVC
Mounting: SMD
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of integrated circuit: buffer
Kind of output: 3-state
Family: LVC
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1210-8
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74LVC126AS14-13 74LVC126AS14-13.PDF
74LVC126AS14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; LVC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Technology: CMOS
Manufacturer series: LVC
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74LVC126AT14-13 74LVC126A.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Family: LVC
Technology: CMOS
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BCR420UW6Q-7 BCR420UW6Q-BCR421UW6Q.pdf
BCR420UW6Q-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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BCR420UW6-7 BCR420UW6-BCR421UW6.pdf
BCR420UW6-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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BCR420UFD-7 BCR420UFD.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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BCR420UFDQ-7 BCR420UFDQ-BCR421UFDQ.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: U-DFN2020-6
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
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SMBJ8.5A-13-F SMBJ_ser.pdf
SMBJ8.5A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 479 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.23 грн
30+14.39 грн
35+12.36 грн
44+9.65 грн
100+6.60 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
74LVC08AS14-13 74LVC08A.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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74LVC08AT14-13 74LVC08A.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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ZDT6790TA ZDT6790.pdf
ZDT6790TA
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45/40V; 2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45/40V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 400
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 937 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+115.78 грн
10+69.33 грн
50+53.33 грн
100+47.83 грн
500+37.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DCX114YU-7-F DCX_XXXX_U.pdf
DCX114YU-7-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...600
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1030 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+20.06 грн
44+9.65 грн
83+5.15 грн
104+4.10 грн
250+3.34 грн
500+2.90 грн
1000+2.75 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
DDTC123YCA-7-F ds30330.pdf
DDTC123YCA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
на замовлення 1400 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.29 грн
99+4.32 грн
145+2.93 грн
500+2.40 грн
1000+2.23 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SMAJ24A-13-F SMAJ_ser.pdf
SMAJ24A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 11960 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.41 грн
35+12.36 грн
40+10.75 грн
57+7.55 грн
100+6.55 грн
250+5.57 грн
1000+4.68 грн
3000+4.38 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMAJ24AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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BAV99WQ-7-F BAV99W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.3A
Features of semiconductor devices: small signal
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AP7312-1833W6-7
AP7312-1833W6-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; SOT26; SMD; AP7312
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 0.15A
Output voltage: 1.8/3.3V DC
Voltage drop: 0.3V
Number of channels: 2
Tolerance: ±2%
Input voltage: 2...6V
Manufacturer series: AP7312
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.64 грн
19+22.94 грн
25+20.65 грн
100+17.86 грн
250+16.42 грн
500+16.25 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MMSTA13-7-F ds30165.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SOT323
Current gain: 5000...10000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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ZVP2120GTA ZVP2120G.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -200mA; Idm: -1.2A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -200mA
Pulsed drain current: -1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZVP2106ASTZ ZVP2106A.pdf
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -280mA; Idm: -4A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.28A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: -4A
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ZVP2120ASTZ ZVP2120A.pdf
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -120mA; Idm: -1.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.12A
Pulsed drain current: -1.2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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ZVP2110GTA ZVP2110G.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -310mA; Idm: -3A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -310mA
Pulsed drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMTH6004SK3-13 DMTH6004SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 150A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 95.4nC
Pulsed drain current: 150A
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DGD0506AFN-7 DGD0506A.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
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