Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74715) > Сторінка 1215 з 1246
| Фото | Назва | Виробник | Інформація |
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BZX84C15-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 3004 шт: термін постачання 21-30 дні (днів) |
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BZX84C15-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 4442 шт: термін постачання 21-30 дні (днів) |
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BZX84C15W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
на замовлення 2323 шт: термін постачання 21-30 дні (днів) |
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BZX84C15Q-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C15Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C15S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMN3024LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 2428 шт: термін постачання 21-30 дні (днів) |
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DMP3085LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8 Kind of channel: enhancement Mounting: SMD Case: SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -3.1A On-state resistance: 70mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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DMC4040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar On-state resistance: 0.04/0.045Ω Power dissipation: 1.8W Drain current: 7.3/-7.5A Gate-source voltage: ±20V Drain-source voltage: 40/-40V Kind of transistor: complementary pair |
на замовлення 609 шт: термін постачання 21-30 дні (днів) |
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AP2301SN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Case: U-DFN2020-6 Active logical level: low Kind of integrated circuit: high-side; USB switch Kind of package: reel; tape Kind of output: P-Channel Mounting: SMD On-state resistance: 70mΩ Output current: 2A Supply voltage: 2.7...5.5V DC Number of channels: 1 |
на замовлення 2954 шт: термін постачання 21-30 дні (днів) |
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| DRTR5V0U4LP16-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; unidirectional; U-DFN1616-6; Ch: 4; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Case: U-DFN1616-6 Application: universal Capacitance: 1.5pF Leakage current: 0.1µA Max. off-state voltage: 5.5V Breakdown voltage: 6V Number of channels: 4 Semiconductor structure: unidirectional |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2DA1797-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 2W Case: SOT89 Pulsed collector current: 6A Current gain: 82...270 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Frequency: 160MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SDM20N40A-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Capacitance: 50pF Leakage current: 3mA Load current: 0.2A Power dissipation: 0.2W Max. forward voltage: 0.55V Semiconductor structure: common anode; double Max. forward impulse current: 1A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C11-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2384 шт: термін постачання 21-30 дні (днів) |
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BS107PSTZ | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.12A Power dissipation: 0.5W Case: TO92 Gate-source voltage: ±20V On-state resistance: 23Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
на замовлення 1559 шт: термін постачання 21-30 дні (днів) |
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BZT52C18Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 18V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 74HCU04S14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC Type of integrated circuit: digital Family: HC Number of channels: 6 Kind of integrated circuit: inverter Kind of output: push-pull Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Supply voltage: 2...6V DC Technology: CMOS Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74HCU04T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C Type of integrated circuit: digital Family: HC Number of channels: 6 Kind of integrated circuit: inverter Kind of output: push-pull Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Supply voltage: 2...6V DC Technology: CMOS Case: TSSOP14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SDM10U45-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD523; SMD; 45V; 0.3A; reel,tape Type of diode: Schottky rectifying Case: SOD523 Mounting: SMD Max. off-state voltage: 45V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 6024 шт: термін постачання 21-30 дні (днів) |
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ZLLS350TA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape Type of diode: Schottky rectifying Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.38A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 1.3A Kind of package: reel; tape Power dissipation: 0.357W |
на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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| DXT2013P5-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 3.2W Case: PowerDI®5 Pulsed collector current: 10A Current gain: 5...300 Mounting: SMD Quantity in set/package: 5000pcs. Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DXT2012P5-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Power dissipation: 3.2W Case: PowerDI®5 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Quantity in set/package: 5000pcs. Kind of package: reel; tape Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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AZ23C3V0-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; double,common anode Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3V Tolerance: ±5% Semiconductor structure: common anode; double |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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BZT52C3V9-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 926 шт: термін постачання 21-30 дні (днів) |
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74LVC1G126W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Quiescent current: 200µA Manufacturer series: LVC |
на замовлення 722 шт: термін постачання 21-30 дні (днів) |
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| 74LVC1G126FW4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1010-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1G126FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1410-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ZXMHC6A07T8TA | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 60/-60V; 1.4/-1.2A; 1.3W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 1.4/-1.2A Power dissipation: 1.3W Case: SOT223-8 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
на замовлення 2738 шт: термін постачання 21-30 дні (днів) |
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ZXMHC3F381N8TC | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3.98/-3.36A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 22.9...-19.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5245B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD123 Type of diode: Zener Power dissipation: 0.37/0.5W Tolerance: ±5% Zener voltage: 15V Kind of package: reel; tape |
на замовлення 2430 шт: термін постачання 21-30 дні (днів) |
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MMSZ5245BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener Power dissipation: 0.2W Tolerance: ±5% Zener voltage: 15V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MMSZ5245BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode Application: automotive industry Semiconductor structure: single diode Mounting: SMD Case: SOD123 Type of diode: Zener Power dissipation: 0.37/0.5W Tolerance: ±5% Zener voltage: 15V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| B2100Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.79V Max. forward impulse current: 50A Leakage current: 2mA Capacitance: 75pF Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ZVN3320FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 60mA Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2992 шт: термін постачання 21-30 дні (днів) |
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FZT458TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 2W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 50MHz Current gain: 100...300 |
на замовлення 902 шт: термін постачання 21-30 дні (днів) |
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BAW156Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.16A Reverse recovery time: 3µs Semiconductor structure: common anode; double Capacitance: 3pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 6708 шт: термін постачання 21-30 дні (днів) |
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BAW156TQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common anode; double Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| ZXTN25020DGTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| BC846BLP4-7B | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 1W Case: X2-DFN1006-3 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5242BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 2296 шт: термін постачання 21-30 дні (днів) |
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| SMAJ15CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DDTC143ZCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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DDTC143ZUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
на замовлення 1189 шт: термін постачання 21-30 дні (днів) |
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| TB0900H-13-F | DIODES INCORPORATED |
Category: Thyristors - othersDescription: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional Type of thyristor: TSS Max. off-state voltage: 75V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 100A Semiconductor structure: bidirectional Breakover voltage: 98V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMN6068SE-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 2553 шт: термін постачання 21-30 дні (днів) |
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ZXTN25020DFHTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4.5A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 215MHz |
на замовлення 2862 шт: термін постачання 21-30 дні (днів) |
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DMN2300UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.96A Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
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| DMN2300UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.94A Pulsed drain current: 8A Power dissipation: 1.2W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 0.89nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN2300UFD-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.34A Pulsed drain current: 6A Power dissipation: 0.47W Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN2300UFL4-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.19A Pulsed drain current: 6A Power dissipation: 1.39W Case: X2-DFN1310-6 Gate-source voltage: ±8V On-state resistance: 0.52Ω Mounting: SMD Gate charge: 3.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAT54TW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: triple independent Capacitance: 10pF Max. forward voltage: 0.24V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BAT54BRW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky rectifying Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series x2 Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
на замовлення 1467 шт: термін постачання 21-30 дні (днів) |
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| SDT10A45P5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape Mounting: SMD Case: PowerDI®5 Type of diode: Schottky rectifying Leakage current: 80mA Max. forward voltage: 0.47V Load current: 10A Max. off-state voltage: 45V Max. forward impulse current: 180A Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SDT10A45P5-13D | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape Mounting: SMD Case: PowerDI®5 Type of diode: Schottky rectifying Leakage current: 80mA Max. forward voltage: 0.47V Load current: 10A Max. off-state voltage: 45V Max. forward impulse current: 180A Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PAM8302AAYCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Operating temperature: -40...85°C Output power: 2.5W Voltage supply range: 2...5.5V DC Kind of package: reel; tape Amplifier class: D Integrated circuit features: low noise; thermal protection Case: U-DFN3030-8 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMAJ26AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DGD0506AM10-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10 Case: MSOP10 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Mounting: SMD Operating temperature: -40...125°C Supply voltage: 8...14V Output current: -2...1.5A Pulse fall time: 25ns Impulse rise time: 35ns Number of channels: 1 Topology: MOSFET half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DGD0506AFN-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A Case: WDFN3030-10 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Mounting: SMD Operating temperature: -40...125°C Supply voltage: 8...14V Output current: -2...1.5A Pulse fall time: 25ns Impulse rise time: 35ns Number of channels: 1 Topology: MOSFET half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC04AS14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; buffer,hex,inverter; IN: 1; CMOS; SMD; SO14; 74LVC; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; hex; inverter Technology: CMOS Case: SO14 Mounting: SMD Operating temperature: -40...125°C Quiescent current: 10µA Number of inputs: 1 Family: LVC Manufacturer series: 74LVC |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SMCJ36A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. |
| BZX84C15-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3004 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 136+ | 2.96 грн |
| 175+ | 2.29 грн |
| 500+ | 1.85 грн |
| 1000+ | 1.65 грн |
| 1500+ | 1.55 грн |
| 3000+ | 1.37 грн |
| BZX84C15-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 4442 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.49 грн |
| 280+ | 1.45 грн |
| 500+ | 1.29 грн |
| 2500+ | 1.20 грн |
| BZX84C15W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 2323 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 33+ | 12.47 грн |
| 38+ | 10.55 грн |
| 100+ | 5.67 грн |
| 500+ | 4.00 грн |
| 1000+ | 3.56 грн |
| BZX84C15Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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В кошику
од. на суму грн.
| BZX84C15Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C15S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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В кошику
од. на суму грн.
| DMN3024LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2428 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.53 грн |
| 12+ | 33.89 грн |
| 100+ | 18.94 грн |
| 250+ | 15.99 грн |
| DMP3085LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 21+ | 19.66 грн |
| 25+ | 16.47 грн |
| 50+ | 10.87 грн |
| 100+ | 9.27 грн |
| DMC4040SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Drain current: 7.3/-7.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Drain current: 7.3/-7.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
на замовлення 609 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.91 грн |
| 10+ | 43.64 грн |
| 100+ | 24.22 грн |
| AP2301SN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: U-DFN2020-6
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
Kind of output: P-Channel
Mounting: SMD
On-state resistance: 70mΩ
Output current: 2A
Supply voltage: 2.7...5.5V DC
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Case: U-DFN2020-6
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
Kind of output: P-Channel
Mounting: SMD
On-state resistance: 70mΩ
Output current: 2A
Supply voltage: 2.7...5.5V DC
Number of channels: 1
на замовлення 2954 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.96 грн |
| 25+ | 16.15 грн |
| 28+ | 14.39 грн |
| 100+ | 12.39 грн |
| 250+ | 11.43 грн |
| 500+ | 10.87 грн |
| 1000+ | 10.71 грн |
| DRTR5V0U4LP16-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; U-DFN1616-6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Case: U-DFN1616-6
Application: universal
Capacitance: 1.5pF
Leakage current: 0.1µA
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Number of channels: 4
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; U-DFN1616-6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Case: U-DFN1616-6
Application: universal
Capacitance: 1.5pF
Leakage current: 0.1µA
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Number of channels: 4
Semiconductor structure: unidirectional
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В кошику
од. на суму грн.
| 2DA1797-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 82...270
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 160MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 82...270
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 160MHz
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В кошику
од. на суму грн.
| SDM20N40A-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
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В кошику
од. на суму грн.
| BZT52C11-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2384 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 76+ | 5.28 грн |
| 91+ | 4.40 грн |
| 125+ | 3.20 грн |
| 205+ | 1.96 грн |
| 500+ | 1.34 грн |
| 1000+ | 1.24 грн |
| BS107PSTZ |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.12A; 0.5W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.12A
Power dissipation: 0.5W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
на замовлення 1559 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.81 грн |
| 10+ | 40.60 грн |
| 100+ | 29.17 грн |
| 500+ | 24.22 грн |
| BZT52C18Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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| 74HCU04S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Case: SO14
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Case: SO14
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| 74HCU04T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Technology: CMOS
Case: TSSOP14
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| SDM10U45-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 45V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 45V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 6024 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 84+ | 4.80 грн |
| 111+ | 3.63 грн |
| 124+ | 3.24 грн |
| 500+ | 2.52 грн |
| 1000+ | 2.29 грн |
| 1500+ | 2.15 грн |
| 3000+ | 1.97 грн |
| 6000+ | 1.80 грн |
| ZLLS350TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1.3A
Kind of package: reel; tape
Power dissipation: 0.357W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 40V; 0.38A; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.38A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1.3A
Kind of package: reel; tape
Power dissipation: 0.357W
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.85 грн |
| 20+ | 20.94 грн |
| 50+ | 16.54 грн |
| 100+ | 14.95 грн |
| 500+ | 11.43 грн |
| 1000+ | 10.63 грн |
| DXT2013P5-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 10A
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 10A
Current gain: 5...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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| DXT2012P5-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 3.2W
Case: PowerDI®5
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 5000pcs.
Kind of package: reel; tape
Frequency: 120MHz
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од. на суму грн.
| AZ23C3V0-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Tolerance: ±5%
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Tolerance: ±5%
Semiconductor structure: common anode; double
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 13.59 грн |
| BZT52C3V9-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 926 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 72+ | 5.59 грн |
| 85+ | 4.72 грн |
| 183+ | 2.19 грн |
| 500+ | 1.47 грн |
| 74LVC1G126W5-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
на замовлення 722 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 34+ | 11.83 грн |
| 43+ | 9.43 грн |
| 100+ | 4.44 грн |
| 500+ | 3.06 грн |
| 74LVC1G126FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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| 74LVC1G126FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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| ZXMHC6A07T8TA |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 60/-60V; 1.4/-1.2A; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.3W
Case: SOT223-8
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 60/-60V; 1.4/-1.2A; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 1.4/-1.2A
Power dissipation: 1.3W
Case: SOT223-8
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
на замовлення 2738 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.94 грн |
| 10+ | 93.51 грн |
| 50+ | 73.53 грн |
| 100+ | 72.73 грн |
| ZXMHC3F381N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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| MMSZ5245B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 109+ | 3.68 грн |
| 171+ | 2.35 грн |
| 500+ | 1.76 грн |
| 1000+ | 1.57 грн |
| MMSZ5245BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
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| MMSZ5245BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 15V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 15V
Kind of package: reel; tape
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| B2100Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 2mA
Capacitance: 75pF
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 2mA
Capacitance: 75pF
Kind of package: reel; tape
Application: automotive industry
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| ZVN3320FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2992 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.66 грн |
| 27+ | 14.95 грн |
| 50+ | 12.31 грн |
| 100+ | 11.27 грн |
| 250+ | 10.15 грн |
| 500+ | 9.35 грн |
| 1000+ | 8.71 грн |
| FZT458TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 100...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 100...300
на замовлення 902 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.56 грн |
| 11+ | 38.13 грн |
| 50+ | 27.97 грн |
| 100+ | 24.70 грн |
| 200+ | 21.98 грн |
| 500+ | 19.02 грн |
| BAW156Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Capacitance: 3pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Capacitance: 3pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 6708 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 136+ | 3.18 грн |
| 272+ | 1.47 грн |
| 307+ | 1.30 грн |
| 1000+ | 1.17 грн |
| 3000+ | 1.16 грн |
| BAW156TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.99 грн |
| 22+ | 18.94 грн |
| 100+ | 9.51 грн |
| 500+ | 4.98 грн |
| 1000+ | 4.29 грн |
| 3000+ | 3.58 грн |
| ZXTN25020DGTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 29.52 грн |
| BC846BLP4-7B |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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| MMSZ5242BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 2296 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.42 грн |
| 74+ | 5.44 грн |
| 84+ | 4.80 грн |
| 136+ | 2.95 грн |
| 500+ | 2.29 грн |
| 535+ | 1.76 грн |
| 1469+ | 1.66 грн |
| SMAJ15CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DDTC143ZCA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
на замовлення 188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.33 грн |
| 50+ | 8.15 грн |
| 57+ | 7.11 грн |
| 102+ | 3.96 грн |
| DDTC143ZUA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
на замовлення 1189 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.33 грн |
| 57+ | 7.03 грн |
| 65+ | 6.15 грн |
| 102+ | 3.96 грн |
| 500+ | 3.02 грн |
| 1000+ | 2.71 грн |
| TB0900H-13-F |
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Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 75V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 98V
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 75V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 98V
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| DMN6068SE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2553 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.04 грн |
| 14+ | 29.09 грн |
| 50+ | 22.38 грн |
| 100+ | 20.06 грн |
| 250+ | 17.34 грн |
| 500+ | 15.59 грн |
| 1000+ | 14.15 грн |
| 2000+ | 12.87 грн |
| ZXTN25020DFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
на замовлення 2862 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.86 грн |
| 11+ | 38.84 грн |
| 25+ | 26.38 грн |
| 50+ | 18.86 грн |
| 137+ | 17.82 грн |
| DMN2300UFB4-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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| DMN2300UFB-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN2300UFD-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN2300UFL4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| BAT54TW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.96 грн |
| 23+ | 17.90 грн |
| 50+ | 12.87 грн |
| 100+ | 11.03 грн |
| 199+ | 4.72 грн |
| 547+ | 4.48 грн |
| BAT54BRW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 1467 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.27 грн |
| 20+ | 20.14 грн |
| 100+ | 15.75 грн |
| 250+ | 14.07 грн |
| 500+ | 12.87 грн |
| 1000+ | 11.99 грн |
| SDT10A45P5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
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| SDT10A45P5-13D |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
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| PAM8302AAYCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Output power: 2.5W
Voltage supply range: 2...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Output power: 2.5W
Voltage supply range: 2...5.5V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
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| SMAJ26AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| DGD0506AM10-13 |
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Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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| DGD0506AFN-7 |
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Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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| 74LVC04AS14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; IN: 1; CMOS; SMD; SO14; 74LVC; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Technology: CMOS
Case: SO14
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 10µA
Number of inputs: 1
Family: LVC
Manufacturer series: 74LVC
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; IN: 1; CMOS; SMD; SO14; 74LVC; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Technology: CMOS
Case: SO14
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 10µA
Number of inputs: 1
Family: LVC
Manufacturer series: 74LVC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 9.64 грн |
| SMCJ36A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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