Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74732) > Сторінка 1226 з 1246
| Фото | Назва | Виробник | Інформація |
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BAT54TA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54TQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54TWQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: triple independent Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP7383-18WR-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD Manufacturer series: AP7383 Operating temperature: -40...125°C Input voltage: 3.5...30V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: SOT25 Output current: 0.15A Number of channels: 1 Tolerance: ±1% Voltage drop: 1.5V Output voltage: 1.8V |
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В кошику од. на суму грн. | ||||||||||||||||
| AP7383-18FDC-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; uDFN6; SMD Manufacturer series: AP7383 Operating temperature: -40...125°C Input voltage: 3.5...30V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: uDFN6 Output current: 50mA Number of channels: 1 Tolerance: ±1% Voltage drop: 1.5V Output voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP7383-18W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD Manufacturer series: AP7383 Operating temperature: -40...125°C Input voltage: 3.5...30V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Integrated circuit features: shutdown mode control input Mounting: SMD Case: SOT25 Output current: 0.15A Number of channels: 1 Tolerance: ±1% Voltage drop: 1.5V Output voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP7383-18WW-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; SOT25; SMD Manufacturer series: AP7383 Operating temperature: -40...125°C Input voltage: 3.5...30V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: SOT25 Output current: 50mA Number of channels: 1 Tolerance: ±1% Voltage drop: 1.5V Output voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP7383-18Y-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT89; SMD Manufacturer series: AP7383 Operating temperature: -40...125°C Input voltage: 3.5...30V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: SOT89 Output current: 0.15A Number of channels: 1 Tolerance: ±1% Voltage drop: 1.5V Output voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3036SFV-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Case: PowerDI3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -7A Gate charge: 16.5nC On-state resistance: 29mΩ Power dissipation: 2.3W Gate-source voltage: ±25V Kind of package: 7 inch reel; tape |
на замовлення 1969 шт: термін постачання 21-30 дні (днів) |
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| ZXTN25015DFHTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| ZXTP25012EFHTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| DMN10H220LE-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 8.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZXTD619MCTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 4A; 2.45W; DFN3020B-8 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 4A Power dissipation: 2.45W Case: DFN3020B-8 Pulsed collector current: 6A Current gain: 40...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...165MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FZT951TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 120MHz Power dissipation: 3W |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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FCX790ATA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 2A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Collector current: 2A Collector-emitter voltage: 40V Quantity in set/package: 1000pcs. Frequency: 100MHz |
на замовлення 1049 шт: термін постачання 21-30 дні (днів) |
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FCX555TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 700mA; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.7A Case: SOT89 Current gain: 100...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
на замовлення 936 шт: термін постачання 21-30 дні (днів) |
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FZT949TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 5.5A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 5.5A Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz Power dissipation: 3W |
на замовлення 157 шт: термін постачання 21-30 дні (днів) |
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BAT54LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: DFN2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.25W Reverse recovery time: 5ns Capacitance: 10pF |
на замовлення 838 шт: термін постачання 21-30 дні (днів) |
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| BAT54LPS-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; X2-DFN1006-2; SMD; 30V; 0.2A; 5ns Type of diode: Schottky rectifying Case: X2-DFN1006-2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.25V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.65W Leakage current: 2µA Reverse recovery time: 5ns Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT54LP-7B | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns Type of diode: Schottky rectifying Case: X1-DFN1006-2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.25W Leakage current: 2µA Reverse recovery time: 5ns Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT54LPQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns Type of diode: Schottky rectifying Case: X1-DFN1006-2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry Power dissipation: 0.25W Leakage current: 2µA Reverse recovery time: 5ns Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SB140-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TT8M_HF | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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| SB180-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.8V Max. forward impulse current: 25A Capacitance: 80pF Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMC4050SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 37.56/33.66nC On-state resistance: 45/45mΩ Power dissipation: 2.14W Drain current: 5.8/-5.8A Gate-source voltage: ±20V Drain-source voltage: 40/-40V Kind of package: 13 inch reel; tape Case: SO8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN4008LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 74nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 15.4A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN4008LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 74nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 15.4A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT4008LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17.1nC On-state resistance: 12mΩ Power dissipation: 1.9W Drain current: 9.7A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 70A Kind of package: 13 inch reel; tape Case: PowerDI3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4008LFDFW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14.2nC On-state resistance: 18mΩ Power dissipation: 2.35W Drain current: 8.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4008LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 13mΩ Power dissipation: 2.99W Drain current: 10.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4008LFDFWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14.2nC On-state resistance: 18mΩ Power dissipation: 2.35W Drain current: 8.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4008LFDFWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 14.2nC On-state resistance: 18mΩ Power dissipation: 2.35W Drain current: 8.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4008LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 13mΩ Power dissipation: 2.99W Drain current: 10.2A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 110A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP4050SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8 Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET x2 Case: SO8 Mounting: SMD Polarisation: unipolar Drain current: -4.1A Drain-source voltage: -40V On-state resistance: 79mΩ Power dissipation: 1.25W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ54A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2884 шт: термін постачання 21-30 дні (днів) |
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| ZXMHC10A07T8TA | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 1.4/-1.3A Power dissipation: 1.3W Case: SM8 Gate-source voltage: ±20V On-state resistance: 700mΩ/1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Gate charge: 2.9/3.5nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMG6602SVTQ-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: TSOT26 Polarisation: unipolar On-state resistance: 0.06/0.095Ω Power dissipation: 0.84W Drain current: 2.7/-2.4A Gate-source voltage: ±20V Pulsed drain current: 25...-20A Drain-source voltage: 30/-30V Kind of package: 7 inch reel; tape |
на замовлення 2227 шт: термін постачання 21-30 дні (днів) |
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SMAZ12-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Zener current: 83mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2140 шт: термін постачання 21-30 дні (днів) |
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1SMB5927B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 412 шт: термін постачання 21-30 дні (днів) |
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AZ23C6V2-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Zener voltage: 6.2V Semiconductor structure: common anode; double Type of diode: Zener |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
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APX823-26W5G-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); SOT25 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD Case: SOT25 Integrated circuit features: manual reset; watchdog DC supply current: 30µA Maximum output current: 20mA Delay time: 200ms Number of channels: 1 Supply voltage: 1.1...5.5V DC Threshold on-voltage: 2.63V Active logical level: low Kind of package: reel; tape Operating temperature: -40...85°C |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| DDTB114EC-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 56 Quantity in set/package: 3000pcs. Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZT52C13T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
на замовлення 1854 шт: термін постачання 21-30 дні (днів) |
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BZT52C13Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 13V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
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| BZT52C13LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 13V Mounting: SMD Tolerance: ±8% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
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| BZT52C13LPQ-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 13V Mounting: SMD Tolerance: ±8% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode Application: automotive industry |
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| BZT52C13TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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SMAJ10CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 10µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 4993 шт: термін постачання 21-30 дні (днів) |
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| SMAJ10CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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ZVN4525E6TA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.23A Pulsed drain current: 1.44A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±40V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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DMN3023L-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 18.4nC Pulsed drain current: 44A |
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| KBP06G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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AP1501-K5G-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 1.23...37V DC Output current: 3A Case: TO263-5 Mounting: SMD Frequency: 150kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 73% |
на замовлення 697 шт: термін постачання 21-30 дні (днів) |
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AP1501A-K5G-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 1.23...37V DC Output current: 5A Case: TO263-5 Mounting: SMD Frequency: 150kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 72% |
на замовлення 606 шт: термін постачання 21-30 дні (днів) |
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DPC817S-B-TR | DIODES INCORPORATED |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Collector-emitter voltage: 35V Case: SMD4 Max. off-state voltage: 6V Number of pins: 4 |
на замовлення 2996000 шт: термін постачання 21-30 дні (днів) |
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B150B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape Case: SMB Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
на замовлення 1652 шт: термін постачання 21-30 дні (днів) |
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B150-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Case: SMA Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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| ZTX692B | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 70V Collector current: 1A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
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В кошику од. на суму грн. | |||||||||||||||||
| ZTX692BSTZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 70V Collector current: 1A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
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| SMBJ51CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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| BAT54TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.15W
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| BAT54TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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| BAT54TWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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| AP7383-18WR-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT25
Output current: 0.15A
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT25
Output current: 0.15A
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
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| AP7383-18FDC-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; uDFN6; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: uDFN6
Output current: 50mA
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; uDFN6; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: uDFN6
Output current: 50mA
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
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| AP7383-18W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT25
Output current: 0.15A
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT25
Output current: 0.15A
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
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| AP7383-18WW-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; SOT25; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT25
Output current: 50mA
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; SOT25; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT25
Output current: 50mA
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
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| AP7383-18Y-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT89; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT89
Output current: 0.15A
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT89; SMD
Manufacturer series: AP7383
Operating temperature: -40...125°C
Input voltage: 3.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT89
Output current: 0.15A
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Output voltage: 1.8V
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| DMP3036SFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
на замовлення 1969 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.06 грн |
| 12+ | 34.93 грн |
| 62+ | 15.27 грн |
| 169+ | 14.47 грн |
| ZXTN25015DFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.40 грн |
| ZXTP25012EFHTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.17 грн |
| DMN10H220LE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 8.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 8.3nC
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| ZXTD619MCTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 4A; 2.45W; DFN3020B-8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 4A; 2.45W; DFN3020B-8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
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| FZT951TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Power dissipation: 3W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Power dissipation: 3W
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.37 грн |
| 10+ | 41.80 грн |
| 25+ | 36.69 грн |
| FCX790ATA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 2A
Collector-emitter voltage: 40V
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 2A
Collector-emitter voltage: 40V
Quantity in set/package: 1000pcs.
Frequency: 100MHz
на замовлення 1049 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.37 грн |
| 11+ | 38.37 грн |
| 13+ | 33.09 грн |
| 100+ | 19.74 грн |
| 250+ | 16.47 грн |
| 500+ | 14.47 грн |
| 1000+ | 12.95 грн |
| FCX555TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 700mA; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.7A
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 700mA; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.7A
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 936 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.95 грн |
| 13+ | 32.61 грн |
| 50+ | 24.54 грн |
| 70+ | 13.51 грн |
| 192+ | 12.79 грн |
| FZT949TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 3W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 3W
на замовлення 157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.73 грн |
| 10+ | 58.27 грн |
| 28+ | 34.05 грн |
| 76+ | 32.21 грн |
| BAT54LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Reverse recovery time: 5ns
Capacitance: 10pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Reverse recovery time: 5ns
Capacitance: 10pF
на замовлення 838 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 29+ | 14.07 грн |
| 33+ | 12.31 грн |
| 100+ | 7.25 грн |
| 338+ | 2.78 грн |
| BAT54LPS-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X2-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.25V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.65W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X2-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.25V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.65W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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| BAT54LP-7B |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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| BAT54LPQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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| SB140-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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| TT8M_HF |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 13.17 грн |
| SB180-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
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| DMC4050SSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 37.56/33.66nC
On-state resistance: 45/45mΩ
Power dissipation: 2.14W
Drain current: 5.8/-5.8A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of package: 13 inch reel; tape
Case: SO8
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 37.56/33.66nC
On-state resistance: 45/45mΩ
Power dissipation: 2.14W
Drain current: 5.8/-5.8A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of package: 13 inch reel; tape
Case: SO8
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| DMN4008LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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| DMN4008LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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| DMT4008LFV-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
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| DMTH4008LFDFW-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
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| DMTH4008LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
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| DMTH4008LFDFWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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| DMTH4008LFDFWQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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| DMTH4008LPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
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| DMP4050SSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain current: -4.1A
Drain-source voltage: -40V
On-state resistance: 79mΩ
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain current: -4.1A
Drain-source voltage: -40V
On-state resistance: 79mΩ
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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| SMAJ54A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2884 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 39+ | 10.47 грн |
| 100+ | 5.13 грн |
| 1000+ | 4.04 грн |
| ZXMHC10A07T8TA |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
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| DMG6602SVTQ-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.06/0.095Ω
Power dissipation: 0.84W
Drain current: 2.7/-2.4A
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Drain-source voltage: 30/-30V
Kind of package: 7 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: TSOT26
Polarisation: unipolar
On-state resistance: 0.06/0.095Ω
Power dissipation: 0.84W
Drain current: 2.7/-2.4A
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Drain-source voltage: 30/-30V
Kind of package: 7 inch reel; tape
на замовлення 2227 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.27 грн |
| 23+ | 17.74 грн |
| 50+ | 12.63 грн |
| 100+ | 10.95 грн |
| 500+ | 7.91 грн |
| 1000+ | 6.95 грн |
| 1500+ | 6.47 грн |
| SMAZ12-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 41+ | 9.75 грн |
| 53+ | 7.67 грн |
| 100+ | 6.87 грн |
| 250+ | 5.99 грн |
| 500+ | 5.51 грн |
| 1000+ | 5.20 грн |
| 1SMB5927B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 412 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 35+ | 11.67 грн |
| 100+ | 8.55 грн |
| AZ23C6V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.47 грн |
| 87+ | 4.64 грн |
| 114+ | 3.52 грн |
| 250+ | 3.21 грн |
| 331+ | 2.85 грн |
| 908+ | 2.70 грн |
| APX823-26W5G-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT25
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Active logical level: low
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 26+ | 15.83 грн |
| 29+ | 14.23 грн |
| 33+ | 12.23 грн |
| 100+ | 10.07 грн |
| 250+ | 9.11 грн |
| 500+ | 8.87 грн |
| DDTB114EC-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
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| BZT52C13T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 1854 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.75 грн |
| 85+ | 4.72 грн |
| 178+ | 2.25 грн |
| BZT52C13Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C13LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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| BZT52C13LPQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C13TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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| SMAJ10CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 4993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.66 грн |
| 29+ | 14.23 грн |
| 34+ | 11.83 грн |
| 46+ | 8.79 грн |
| 100+ | 5.99 грн |
| 250+ | 5.12 грн |
| 500+ | 4.80 грн |
| 650+ | 4.64 грн |
| SMAJ10CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 8.44 грн |
| ZVN4525E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 71.44 грн |
| 10+ | 45.32 грн |
| 30+ | 39.88 грн |
| 31+ | 31.33 грн |
| 83+ | 29.65 грн |
| DMN3023L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
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| KBP06G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| AP1501-K5G-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
на замовлення 697 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 171.29 грн |
| 10+ | 119.09 грн |
| 25+ | 109.50 грн |
| 50+ | 103.91 грн |
| 100+ | 99.11 грн |
| AP1501A-K5G-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 72%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 72%
на замовлення 606 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 194.53 грн |
| 10+ | 135.08 грн |
| 11+ | 89.52 грн |
| 29+ | 84.72 грн |
| DPC817S-B-TR |
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Виробник: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 35V
Case: SMD4
Max. off-state voltage: 6V
Number of pins: 4
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 35V
Case: SMD4
Max. off-state voltage: 6V
Number of pins: 4
на замовлення 2996000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 2.89 грн |
| B150B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 1652 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.94 грн |
| 27+ | 15.35 грн |
| 28+ | 14.47 грн |
| 100+ | 12.07 грн |
| 206+ | 4.56 грн |
| 566+ | 4.32 грн |
| B150-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.49 грн |
| 39+ | 10.39 грн |
| 100+ | 7.80 грн |
| ZTX692B |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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| ZTX692BSTZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ51CAQ-13-F |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.





















