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SDT20A120CT SDT20A120CT DIODES INCORPORATED SDT20A120CT-SDT20A120CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
9+48.65 грн
12+33.96 грн
Мінімальне замовлення: 9
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DT2042-04SO-7 DIODES INCORPORATED DT2042-04SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
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DT2042-04TS-7 DIODES INCORPORATED DT2042-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
Application: HDMI
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SDT20A100CT DIODES INCORPORATED SDT20A100CT-SDT20A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
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SDT20B100D1-13 DIODES INCORPORATED SDT20B100D1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
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DGTD120T25S1PT DGTD120T25S1PT DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983D0C969BA50C143&compId=DGTD120T25S1PT.pdf?ci_sign=7251f7e9e40b293f31ad3ba94c6ca527db53ec83 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
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BAV20WS-7-F BAV20WS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797ACFCFD0C270748&compId=BAV19WS_BAV21WS.pdf?ci_sign=4a6c73c6a0d7bba03a4623d278fbd4b73c2ff2a0 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 3547 шт:
термін постачання 21-30 дні (днів)
50+8.69 грн
55+7.42 грн
59+6.86 грн
75+5.44 грн
100+4.86 грн
250+4.10 грн
500+3.54 грн
1000+3.02 грн
2500+2.35 грн
Мінімальне замовлення: 50
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BAV20W-7-F BAV20W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B5A289EDC5EFA8&compId=BAV21W-DTE.pdf?ci_sign=79b0fbbe391ec181366f1a350ca16e01fc68a233 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
21+19.36 грн
Мінімальне замовлення: 21
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DXTN5820DFDB-7 DIODES INCORPORATED DXTN5820DFDB.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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MURS160-13-F MURS160-13-F DIODES INCORPORATED MURS140-MURS160.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
19+23.46 грн
27+15.33 грн
100+10.57 грн
150+9.84 грн
Мінімальне замовлення: 19
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MURS140-13-F DIODES INCORPORATED MURS140-MURS160.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
17+26.93 грн
23+18.07 грн
100+14.04 грн
500+11.78 грн
1000+10.81 грн
Мінімальне замовлення: 17
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AP31251W6-7 DIODES INCORPORATED AP31251.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 60...70kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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AP2181SG-13 AP2181SG-13 DIODES INCORPORATED AP2181_91.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
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DGD2181S8-13 DIODES INCORPORATED DGD2181.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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ZUMT618TA DIODES INCORPORATED ZUMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
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DMP10H400SK3-13 DMP10H400SK3-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E026A349B3B8BF&compId=DMP10H400SK3.pdf?ci_sign=336e53a58952b0094da71bf55470e91163f04035 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)
13+34.75 грн
14+29.69 грн
25+26.78 грн
100+19.36 грн
250+15.33 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMAJ18CA-13-F SMAJ18CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)
25+17.38 грн
29+14.20 грн
33+12.26 грн
39+10.41 грн
100+6.78 грн
500+4.92 грн
1000+4.52 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ18CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ33A-13-F SMCJ33A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)
10+43.44 грн
12+34.37 грн
14+30.25 грн
100+18.96 грн
500+16.14 грн
Мінімальне замовлення: 10
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DMHT6016LFJ-13 DIODES INCORPORATED DMHT6016LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SMBJ75CA-13-F SMBJ75CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP3018SFV-7 DIODES INCORPORATED DMP3018SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3018SFK-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0E8CC253998BF&compId=DMP3018SFK.pdf?ci_sign=46a80f7a6d55db13b2c24f41f51fd3544cc7c7fe Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Power dissipation: 1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3018SSS-13 DMP3018SSS-13 DIODES INCORPORATED DMP3018SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -90A
Power dissipation: 1.7W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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BZT52C20-7-F BZT52C20-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 629 шт:
термін постачання 21-30 дні (днів)
63+6.95 грн
84+4.84 грн
99+4.11 грн
186+2.17 грн
500+1.57 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BZT52C20T-7 BZT52C20T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 630 шт:
термін постачання 21-30 дні (днів)
100+4.78 грн
210+1.95 грн
500+1.73 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BZT52C20LP-7 BZT52C20LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)
18+25.20 грн
24+17.26 грн
100+10.00 грн
500+6.86 грн
1000+5.89 грн
Мінімальне замовлення: 18
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BZT52C20Q-7-F BZT52C20Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C20-13-F BZT52C20-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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BZT52C20SQ-7-F DIODES INCORPORATED ds30093.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C20TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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AP3125BKTR-G1 AP3125BKTR-G1 DIODES INCORPORATED AP3125B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -20...125°C
Application: SMPS
Frequency: 20...70kHz
Supply voltage: 10...25V
Duty cycle factor: 0...80%
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GBU602 GBU602 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
4+126.85 грн
10+56.47 грн
20+53.49 грн
Мінімальне замовлення: 4
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GBU6005 GBU6005 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FZT489QTA FZT489QTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACC993B1EB58BF&compId=FZT489.pdf?ci_sign=6989b71f7432f15f60c06a125e8dbe2be100b148 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1.2W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
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AL5890-10Y-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 10mA; Ch: 1
Type of integrated circuit: driver
Output current: 10mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-15Y-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-30Y-13 DIODES INCORPORATED Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 30mA; Ch: 1
Type of integrated circuit: driver
Output current: 30mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-20Y-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 20mA; Ch: 1
Type of integrated circuit: driver
Output current: 20mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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FCX789ATA DIODES INCORPORATED FCX789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Power dissipation: 2W
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FZT489TA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
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FZT589TA DIODES INCORPORATED FZT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FZT789AQTA DIODES INCORPORATED FZT789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 3W
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
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FCX589TA DIODES INCORPORATED FCX589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Power dissipation: 2.3W
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FMMT589TA FMMT589TA DIODES INCORPORATED FMMT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FMMT489TA DIODES INCORPORATED FMMT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
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PI6CV304WE DIODES INCORPORATED PI6CV304.pdf Category: Level translators
Description: IC: digital; fanout buffer; CMOS,TTL; SMD; SOIC8; -40÷85°C; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of outputs: 4
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
97+40.92 грн
Мінімальне замовлення: 97
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ZXTP25020CFFTA
+1
 		ZXTP25020CFFTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986AF3647E29A18BF&compId=ZXTP25020CFF.pdf?ci_sign=c89e06d9b5a9341e97b65eca5ecf355879ba31d3 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.96W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
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ZXTP25020BFHTA DIODES INCORPORATED ZXTP25020BFH.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+20.68 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ZXTP25020DGTA DIODES INCORPORATED ZXTP25020DG.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+20.85 грн
Мінімальне замовлення: 1000
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MBRB20150CT-13 DIODES INCORPORATED MBRB20150CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
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MBRB20150CT DIODES INCORPORATED MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: tube
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GBU802 GBU802 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC713906BD8748&compId=gbu8005-gbu810.pdf?ci_sign=b3d92291c686ef4b0377879590787a104b2f295a Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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SMBJ20CA-13-F SMBJ20CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3018 шт:
термін постачання 21-30 дні (днів)
36+12.16 грн
46+8.79 грн
100+6.94 грн
500+6.05 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SMBJ20CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DDTD123EC-7-F DIODES INCORPORATED DDTD_XXXX_C.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 39
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
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SDM20U40Q-13 DIODES INCORPORATED SDM20U40Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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PSMAJ400CA-13 DIODES INCORPORATED PSMAJ400(C)A.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 380÷420V; 0.73A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 0.73A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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AP7387-50SA-7 AP7387-50SA-7 DIODES INCORPORATED AP7387.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7387
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
на замовлення 2339 шт:
термін постачання 21-30 дні (днів)
11+40.83 грн
13+31.46 грн
15+28.08 грн
25+24.28 грн
100+22.75 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
AP7381-50SA-7 AP7381-50SA-7 DIODES INCORPORATED AP7381.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Manufacturer series: AP7381
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Case: SOT23
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.15A
Number of channels: 1
Voltage drop: 1V
Tolerance: ±2%
Output voltage: 5V
Input voltage: 3.3...40V
Kind of package: reel; tape
на замовлення 894 шт:
термін постачання 21-30 дні (днів)
25+17.38 грн
30+13.55 грн
34+11.94 грн
40+10.25 грн
100+8.39 грн
250+7.66 грн
500+7.34 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SDT20A120CT SDT20A120CT-SDT20A120CTFP.pdf
SDT20A120CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.65 грн
12+33.96 грн
Мінімальне замовлення: 9
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DT2042-04SO-7 DT2042-04SO.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: universal
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DT2042-04TS-7 DT2042-04TS.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
Application: HDMI
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SDT20A100CT SDT20A100CT-SDT20A100CTFP.pdf
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
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SDT20B100D1-13 SDT20B100D1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
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DGTD120T25S1PT pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983D0C969BA50C143&compId=DGTD120T25S1PT.pdf?ci_sign=7251f7e9e40b293f31ad3ba94c6ca527db53ec83
DGTD120T25S1PT
Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 110ns
Gate charge: 204nC
Turn-off time: 367ns
Gate-emitter voltage: ±20V
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BAV20WS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE797ACFCFD0C270748&compId=BAV19WS_BAV21WS.pdf?ci_sign=4a6c73c6a0d7bba03a4623d278fbd4b73c2ff2a0
BAV20WS-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 3547 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.69 грн
55+7.42 грн
59+6.86 грн
75+5.44 грн
100+4.86 грн
250+4.10 грн
500+3.54 грн
1000+3.02 грн
2500+2.35 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAV20W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B5A289EDC5EFA8&compId=BAV21W-DTE.pdf?ci_sign=79b0fbbe391ec181366f1a350ca16e01fc68a233
BAV20W-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 9A
Case: SOD123
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+19.36 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DXTN5820DFDB-7 DXTN5820DFDB.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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MURS160-13-F MURS140-MURS160.pdf
MURS160-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+23.46 грн
27+15.33 грн
100+10.57 грн
150+9.84 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
MURS140-13-F MURS140-MURS160.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.93 грн
23+18.07 грн
100+14.04 грн
500+11.78 грн
1000+10.81 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AP31251W6-7 AP31251.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; 10÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 60...70kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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AP2181SG-13 AP2181_91.pdf
AP2181SG-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
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DGD2181S8-13 DGD2181.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Pulse fall time: 35ns
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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ZUMT618TA ZUMT618.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1.25A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.25A
Power dissipation: 0.5W
Case: SOT323
Pulsed collector current: 4A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 210MHz
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DMP10H400SK3-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E026A349B3B8BF&compId=DMP10H400SK3.pdf?ci_sign=336e53a58952b0094da71bf55470e91163f04035
DMP10H400SK3-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.75 грн
14+29.69 грн
25+26.78 грн
100+19.36 грн
250+15.33 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMAJ18CA-13-F SMAJ_ser.pdf
SMAJ18CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.38 грн
29+14.20 грн
33+12.26 грн
39+10.41 грн
100+6.78 грн
500+4.92 грн
1000+4.52 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ18CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ33A-13-F SMCJ_ser.pdf
SMCJ33A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.44 грн
12+34.37 грн
14+30.25 грн
100+18.96 грн
500+16.14 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMHT6016LFJ-13 DMHT6016LFJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 60A
Power dissipation: 2.7W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SMBJ75CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ75CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP3018SFV-7 DMP3018SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3018SFK-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0E8CC253998BF&compId=DMP3018SFK.pdf?ci_sign=46a80f7a6d55db13b2c24f41f51fd3544cc7c7fe
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Power dissipation: 1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25.5mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3018SSS-13 DMP3018SSS.pdf
DMP3018SSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -90A
Power dissipation: 1.7W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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BZT52C20-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C20-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 629 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.95 грн
84+4.84 грн
99+4.11 грн
186+2.17 грн
500+1.57 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BZT52C20T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C20T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 630 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.78 грн
210+1.95 грн
500+1.73 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BZT52C20LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
BZT52C20LP-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.20 грн
24+17.26 грн
100+10.00 грн
500+6.86 грн
1000+5.89 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BZT52C20Q-7-F ds18004.pdf
BZT52C20Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C20-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C20-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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BZT52C20SQ-7-F ds30093.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C20TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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AP3125BKTR-G1 AP3125B.pdf
AP3125BKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -20...125°C
Application: SMPS
Frequency: 20...70kHz
Supply voltage: 10...25V
Duty cycle factor: 0...80%
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GBU602 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42
GBU602
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+126.85 грн
10+56.47 грн
20+53.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU6005 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42
GBU6005
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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FZT489QTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACC993B1EB58BF&compId=FZT489.pdf?ci_sign=6989b71f7432f15f60c06a125e8dbe2be100b148
FZT489QTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 1.2W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
на замовлення 922 шт:
термін постачання 21-30 дні (днів)
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AL5890-10Y-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 10mA; Ch: 1
Type of integrated circuit: driver
Output current: 10mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-15Y-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-30Y-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 30mA; Ch: 1
Type of integrated circuit: driver
Output current: 30mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AL5890-20Y-13 AL5890.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SOT89; 20mA; Ch: 1
Type of integrated circuit: driver
Output current: 20mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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FCX789ATA FCX789A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 8A
Power dissipation: 2W
Collector-emitter voltage: 25V
Current gain: 75...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FZT489TA FZT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
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FZT589TA FZT589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Power dissipation: 3W
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FZT789AQTA FZT789A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 3W
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
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FCX589TA FCX589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Power dissipation: 2.3W
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FMMT589TA FMMT589.pdf
FMMT589TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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FMMT489TA FMMT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
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PI6CV304WE PI6CV304.pdf
Виробник: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; fanout buffer; CMOS,TTL; SMD; SOIC8; -40÷85°C; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of outputs: 4
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
97+40.92 грн
Мінімальне замовлення: 97
В кошику  од. на суму  грн.
ZXTP25020CFFTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986AF3647E29A18BF&compId=ZXTP25020CFF.pdf?ci_sign=c89e06d9b5a9341e97b65eca5ecf355879ba31d3
ZXTP25020CFFTA
+1
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.96W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
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ZXTP25020BFHTA ZXTP25020BFH.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+20.68 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ZXTP25020DGTA ZXTP25020DG.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+20.85 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
MBRB20150CT-13 MBRB20150CT.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
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MBRB20150CT MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: tube
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GBU802 pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC713906BD8748&compId=gbu8005-gbu810.pdf?ci_sign=b3d92291c686ef4b0377879590787a104b2f295a
GBU802
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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SMBJ20CA-13-F SMBJ_ser.pdf
SMBJ20CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3018 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.16 грн
46+8.79 грн
100+6.94 грн
500+6.05 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SMBJ20CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DDTD123EC-7-F DDTD_XXXX_C.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 39
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
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SDM20U40Q-13 SDM20U40Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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PSMAJ400CA-13 PSMAJ400(C)A.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 380÷420V; 0.73A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 0.73A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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AP7387-50SA-7 AP7387.pdf
AP7387-50SA-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7387
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5...60V
Kind of package: reel; tape
на замовлення 2339 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.83 грн
13+31.46 грн
15+28.08 грн
25+24.28 грн
100+22.75 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
AP7381-50SA-7 AP7381.pdf
AP7381-50SA-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Manufacturer series: AP7381
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Case: SOT23
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.15A
Number of channels: 1
Voltage drop: 1V
Tolerance: ±2%
Output voltage: 5V
Input voltage: 3.3...40V
Kind of package: reel; tape
на замовлення 894 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.38 грн
30+13.55 грн
34+11.94 грн
40+10.25 грн
100+8.39 грн
250+7.66 грн
500+7.34 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
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