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DMN2046U-7 DMN2046U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8E212FA6D78BF&compId=DMN2046U.pdf?ci_sign=bce2588b88d965b48c8f02b140547dbddd4bd3ac Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1035 шт:
термін постачання 21-30 дні (днів)
18+23.87 грн
23+17.42 грн
27+14.88 грн
100+8.02 грн
249+3.74 грн
684+3.55 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMN2040LTS-13 DMN2040LTS-13 DIODES INCORPORATED ds31941.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Case: TSSOP8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 36mΩ
Power dissipation: 0.89W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 30A
Kind of channel: enhancement
на замовлення 2012 шт:
термін постачання 21-30 дні (днів)
10+42.63 грн
13+30.72 грн
76+12.27 грн
208+11.64 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN2004K-7 DMN2004K-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F976E61C49E748&compId=DMN2004K.pdf?ci_sign=82eaae16cd30e837359bc5999ad3bf63810b124a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
16+27.28 грн
20+19.79 грн
32+12.75 грн
50+10.20 грн
100+6.74 грн
198+4.70 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DMN2028USS-13 DMN2028USS-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F97EE4C1678748&compId=DMN2028USS.pdf?ci_sign=54153eb7536a9f55f8880d98ca7ffbc4948fb66c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2471 шт:
термін постачання 21-30 дні (днів)
11+40.07 грн
14+29.77 грн
50+23.99 грн
60+15.68 грн
164+14.81 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMN2058U-7 DMN2058U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8F13FB4CBB8BF&compId=DMN2058U.pdf?ci_sign=da9047ba6524f9f731309b8711734d9eff436d1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; 0.74W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
16+28.14 грн
21+19.32 грн
50+13.14 грн
100+11.08 грн
162+5.78 грн
444+5.46 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DMN2005LPK-7 DMN2005LPK-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8F55B4F0F4A18&compId=DMN2005LPK.pdf?ci_sign=8912dfcfb779d22f35f28fc024ef8c1aefcb1041 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1124 шт:
термін постачання 21-30 дні (днів)
60+7.16 грн
73+5.46 грн
100+4.83 грн
218+4.28 грн
600+4.04 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
MMSZ5231B-7-F MMSZ5231B-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)
42+10.23 грн
56+7.13 грн
73+5.46 грн
185+2.15 грн
500+1.50 грн
658+1.42 грн
1000+1.39 грн
1809+1.34 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMCJ110A-13-F SMCJ110A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 122÷135V; 8.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ110CA-13-F SMCJ110CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 122÷135V; 8.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ11A-13-F SMCJ11A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12.2÷13.5V; 82.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 82.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ11CA-13-F SMCJ11CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12.2÷13.5V; 82.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 82.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT52C3V6T-7 BZT52C3V6T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C3V6LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C3V6Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DMG4496SSS-13 DMG4496SSS-13 DIODES INCORPORATED ds32048.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 60A
Power dissipation: 1.42W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DGD21904MS14-13 DGD21904MS14-13 DIODES INCORPORATED DGD21904M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
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DGD2190MS8-13 DIODES INCORPORATED DGD2190M.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
Pulse fall time: 45ns
Impulse rise time: 50ns
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DDZ13ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD323F; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Case: SOD323F
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1SMB5939B-13 1SMB5939B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 1µA
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
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SMBJ28CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ28CA-13-F SMBJ28CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SBR4040CT SBR4040CT DIODES INCORPORATED SBR4040.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 40V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 40V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.53V
Max. forward impulse current: 280A
Kind of package: tube
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SBR4040CTFP SBR4040CTFP DIODES INCORPORATED SBR4040.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 40V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 40V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.53V
Max. forward impulse current: 280A
Kind of package: tube
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DMMT3904W-13-F DMMT3904W-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E3058A3C4C20D3&compId=DMMT3904W.pdf?ci_sign=8125a385a972dca67d2b8016e481af976b072396 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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DMMT3904WQ-7-F DMMT3904WQ-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E30BF93D6B00D3&compId=DMMT3904WQ.pdf?ci_sign=bb88143ca8fdbe759579258bfdbcbf45bf096609 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Application: automotive industry
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PAM8304AYR DIODES INCORPORATED PAM8304.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
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BZT585B5V6T-7 BZT585B5V6T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 5.6V
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
35+11.08 грн
Мінімальне замовлення: 35
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BZT585B3V6T-7 BZT585B3V6T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 3.6V
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BZT585B3V6TQ-7 DIODES INCORPORATED BZT585B5V1TQ-BZT585B43TQ.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Application: automotive industry
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 3.6V
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BZT585B5V6TQ-7 DIODES INCORPORATED BZT585B5V1TQ-BZT585B43TQ.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Application: automotive industry
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 5.6V
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AP8801SG-13 AP8801SG-13 DIODES INCORPORATED AP8801.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: SO8
Output current: 0.5A
Input voltage: 0.8...48V DC
Efficiency: 92%
Frequency: 700kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
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MJD32CQ-13 MJD32CQ-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACEAA3C96A58BF&compId=MJD32C.pdf?ci_sign=3e2e24b77149592cca1dedb234fa528d800add07 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Application: automotive industry
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MJD32C-13 DIODES INCORPORATED ds31624.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
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MJD32CUQ-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D49BAA6F460CE&compId=MJD32CUQ.pdf?ci_sign=e47ff044fcda6d395f7d567ed22ea6f4e85f1426 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
Application: automotive industry
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1SMB5955B-13 DIODES INCORPORATED ds32125.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
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ZVN0545GTA ZVN0545GTA DIODES INCORPORATED ZVN0545G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.14A; Idm: 0.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 0.14A
Pulsed drain current: 0.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 50Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZDT6753TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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ZDT6753TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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BAS70-06Q-7-F BAS70-06Q-7-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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BAS70-06T-7-F BAS70-06T-7-F DIODES INCORPORATED BAS70T_-04T_-05T_-06T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
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SMCJ5.0CA-13-F SMCJ5.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; bidirectional; SMC; reel,tape
Case: SMC
Features of semiconductor devices: glass passivated
Mounting: SMD
Type of diode: TVS
Leakage current: 2mA
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
на замовлення 809 шт:
термін постачання 21-30 дні (днів)
14+32.40 грн
15+28.03 грн
16+26.28 грн
75+12.51 грн
205+11.80 грн
Мінімальне замовлення: 14
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74AUP1G126FS3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68AE00D3&compId=74AUP1G126.pdf?ci_sign=ed06b6ef6e9fce30add8ba83dc5cf916265dc905 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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74AUP1G126FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68AF00D3&compId=74AUP1G126.pdf?ci_sign=ecd80f340cfab14616457bd176364b49d6b76ca4 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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74AUP1G126FX4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C6A5818E0D3&compId=74AUP1G126.pdf?ci_sign=449c64e05193a2df4762bf2bc81ae4b40f60a0ae Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMP6023LFG-7 DIODES INCORPORATED DMP6023LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP6023LFGQ-13 DIODES INCORPORATED DMP6023LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate charge: 53.1nC
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DMP6023LFGQ-7 DIODES INCORPORATED DMP6023LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZSR1000GTA ZSR1000GTA DIODES INCORPORATED ZSR.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 12...20V
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74HCT32S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FCC0D3&compId=74HCT32.pdf?ci_sign=cf85805f3d70eab07958b051c3cc359e179a14c5 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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74HCT32T14-13 DIODES INCORPORATED 74HCT32.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+5.88 грн
Мінімальне замовлення: 2500
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74HCT08S14-13 74HCT08S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B6540D3&compId=74HCT08.pdf?ci_sign=79ca381c05d927ddebac96128a7bedae1f32db24 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
на замовлення 909 шт:
термін постачання 21-30 дні (днів)
12+37.52 грн
19+20.98 грн
25+17.02 грн
100+12.59 грн
133+6.97 грн
366+6.65 грн
Мінімальне замовлення: 12
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74HCT08T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F5C0D3&compId=74HCT08.pdf?ci_sign=7b2221fed63b623caffb82245b5cf0c4171ea839 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
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MSB30M-13 DIODES INCORPORATED MSB30M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; MSBL
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MSB30KH-13 DIODES INCORPORATED MSB30KH.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 3A
Max. forward impulse current: 110A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AH3231Q-W-7 DIODES INCORPORATED AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+25.83 грн
Мінімальне замовлення: 3000
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AH3232Q-W-7 DIODES INCORPORATED AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+25.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AH3242Q-W-7 DIODES INCORPORATED AH324xQ_AH328xQ.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+25.83 грн
Мінімальне замовлення: 3000
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AH3270Q-W-7 DIODES INCORPORATED AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+34.62 грн
Мінімальне замовлення: 3000
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AH3280Q-W-7 DIODES INCORPORATED AH324xQ_AH328xQ.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+41.69 грн
Мінімальне замовлення: 3000
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AH3281Q-W-7 DIODES INCORPORATED AH324xQ_AH328xQ.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+41.69 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN2046U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8E212FA6D78BF&compId=DMN2046U.pdf?ci_sign=bce2588b88d965b48c8f02b140547dbddd4bd3ac
DMN2046U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1035 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.87 грн
23+17.42 грн
27+14.88 грн
100+8.02 грн
249+3.74 грн
684+3.55 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMN2040LTS-13 ds31941.pdf
DMN2040LTS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Case: TSSOP8
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 36mΩ
Power dissipation: 0.89W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 30A
Kind of channel: enhancement
на замовлення 2012 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.63 грн
13+30.72 грн
76+12.27 грн
208+11.64 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN2004K-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F976E61C49E748&compId=DMN2004K.pdf?ci_sign=82eaae16cd30e837359bc5999ad3bf63810b124a
DMN2004K-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.28 грн
20+19.79 грн
32+12.75 грн
50+10.20 грн
100+6.74 грн
198+4.70 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DMN2028USS-13 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797F97EE4C1678748&compId=DMN2028USS.pdf?ci_sign=54153eb7536a9f55f8880d98ca7ffbc4948fb66c
DMN2028USS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2471 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.07 грн
14+29.77 грн
50+23.99 грн
60+15.68 грн
164+14.81 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMN2058U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8F13FB4CBB8BF&compId=DMN2058U.pdf?ci_sign=da9047ba6524f9f731309b8711734d9eff436d1b
DMN2058U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; 0.74W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.14 грн
21+19.32 грн
50+13.14 грн
100+11.08 грн
162+5.78 грн
444+5.46 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DMN2005LPK-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8F55B4F0F4A18&compId=DMN2005LPK.pdf?ci_sign=8912dfcfb779d22f35f28fc024ef8c1aefcb1041
DMN2005LPK-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1124 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
60+7.16 грн
73+5.46 грн
100+4.83 грн
218+4.28 грн
600+4.04 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
MMSZ5231B-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa
MMSZ5231B-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.23 грн
56+7.13 грн
73+5.46 грн
185+2.15 грн
500+1.50 грн
658+1.42 грн
1000+1.39 грн
1809+1.34 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMCJ110A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ110A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 122÷135V; 8.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ110CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ110CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 122÷135V; 8.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ11A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ11A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12.2÷13.5V; 82.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 82.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ11CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ11CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12.2÷13.5V; 82.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 82.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT52C3V6T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C3V6T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C3V6LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C3V6Q-7-F ds18004.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DMG4496SSS-13 ds32048.pdf
DMG4496SSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 60A
Power dissipation: 1.42W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DGD21904MS14-13 DGD21904M.pdf
DGD21904MS14-13
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
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DGD2190MS8-13 DGD2190M.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
Pulse fall time: 45ns
Impulse rise time: 50ns
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DDZ13ASF-7 ds31987.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD323F; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Case: SOD323F
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1SMB5939B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5939B-13
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode; 1uA
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 1µA
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
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SMBJ28CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ28CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SBR4040CT SBR4040.pdf
SBR4040CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 40V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 40V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.53V
Max. forward impulse current: 280A
Kind of package: tube
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SBR4040CTFP SBR4040.pdf
SBR4040CTFP
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 40V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 40V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.53V
Max. forward impulse current: 280A
Kind of package: tube
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DMMT3904W-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E3058A3C4C20D3&compId=DMMT3904W.pdf?ci_sign=8125a385a972dca67d2b8016e481af976b072396
DMMT3904W-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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DMMT3904WQ-7-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99E30BF93D6B00D3&compId=DMMT3904WQ.pdf?ci_sign=bb88143ca8fdbe759579258bfdbcbf45bf096609
DMMT3904WQ-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Application: automotive industry
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PAM8304AYR PAM8304.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Operating temperature: -40...85°C
Output power: 3W
Voltage supply range: 2.8...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low noise; thermal protection
Case: U-DFN3030-8
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
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BZT585B5V6T-7 BZT585BxVxT.pdf
BZT585B5V6T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 5.6V
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+11.08 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
BZT585B3V6T-7 BZT585BxVxT.pdf
BZT585B3V6T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 3.6V
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BZT585B3V6TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Application: automotive industry
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 3.6V
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BZT585B5V6TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Application: automotive industry
Case: SOD523
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.35W
Tolerance: ±2%
Zener voltage: 5.6V
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AP8801SG-13 AP8801.pdf
AP8801SG-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Case: SO8
Output current: 0.5A
Input voltage: 0.8...48V DC
Efficiency: 92%
Frequency: 700kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
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MJD32CQ-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986ACEAA3C96A58BF&compId=MJD32C.pdf?ci_sign=3e2e24b77149592cca1dedb234fa528d800add07
MJD32CQ-13
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 2500pcs.
Application: automotive industry
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MJD32C-13 ds31624.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
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MJD32CUQ-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D49BAA6F460CE&compId=MJD32CUQ.pdf?ci_sign=e47ff044fcda6d395f7d567ed22ea6f4e85f1426
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 5A
Quantity in set/package: 2500pcs.
Application: automotive industry
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1SMB5955B-13 ds32125.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
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ZVN0545GTA ZVN0545G.pdf
ZVN0545GTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.14A; Idm: 0.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 0.14A
Pulsed drain current: 0.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 50Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZDT6753TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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ZDT6753TC pVersion=0046&contRep=ZT&docId=005056AB281E1EDD86A7F41A8636E0D2&compId=ZDT6753.pdf?ci_sign=40eb497d0bec14052cf7ffef147444255b323d97
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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BAS70-06Q-7-F BAS70-05Q-BAS70-06Q.pdf
BAS70-06Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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BAS70-06T-7-F BAS70T_-04T_-05T_-06T.pdf
BAS70-06T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
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SMCJ5.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ5.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; bidirectional; SMC; reel,tape
Case: SMC
Features of semiconductor devices: glass passivated
Mounting: SMD
Type of diode: TVS
Leakage current: 2mA
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
на замовлення 809 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.40 грн
15+28.03 грн
16+26.28 грн
75+12.51 грн
205+11.80 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
74AUP1G126FS3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68AE00D3&compId=74AUP1G126.pdf?ci_sign=ed06b6ef6e9fce30add8ba83dc5cf916265dc905
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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74AUP1G126FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68AF00D3&compId=74AUP1G126.pdf?ci_sign=ecd80f340cfab14616457bd176364b49d6b76ca4
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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74AUP1G126FX4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C6A5818E0D3&compId=74AUP1G126.pdf?ci_sign=449c64e05193a2df4762bf2bc81ae4b40f60a0ae
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMP6023LFG-7 DMP6023LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP6023LFGQ-13 DMP6023LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate charge: 53.1nC
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DMP6023LFGQ-7 DMP6023LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZSR1000GTA ZSR.pdf
ZSR1000GTA
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 12...20V
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74HCT32S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FCC0D3&compId=74HCT32.pdf?ci_sign=cf85805f3d70eab07958b051c3cc359e179a14c5
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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74HCT32T14-13 74HCT32.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+5.88 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74HCT08S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B6540D3&compId=74HCT08.pdf?ci_sign=79ca381c05d927ddebac96128a7bedae1f32db24
74HCT08S14-13
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
на замовлення 909 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.52 грн
19+20.98 грн
25+17.02 грн
100+12.59 грн
133+6.97 грн
366+6.65 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
74HCT08T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F5C0D3&compId=74HCT08.pdf?ci_sign=7b2221fed63b623caffb82245b5cf0c4171ea839
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
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MSB30M-13 MSB30M.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; MSBL
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MSB30KH-13 MSB30KH.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 3A
Max. forward impulse current: 110A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AH3231Q-W-7 AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+25.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AH3232Q-W-7 AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+25.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AH3242Q-W-7 AH324xQ_AH328xQ.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+25.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AH3270Q-W-7 AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+34.62 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AH3280Q-W-7 AH324xQ_AH328xQ.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+41.69 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AH3281Q-W-7 AH324xQ_AH328xQ.pdf
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+41.69 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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