Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74476) > Сторінка 1227 з 1242
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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AP7335-18WG-7 | DIODES INCORPORATED |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 1.8V Kind of package: reel; tape Case: SOT25 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AP7335-20SNG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.3A; DFN6; SMD; ±2% Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 2V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||
| AP7335-25SNG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFN6; SMD Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 2.5V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||
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AP7335-25WG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 2.5V Kind of package: reel; tape Case: SOT25 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP7335-28WG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 2.8V Kind of package: reel; tape Case: SOT25 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AP7335-30SNG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN6; SMD; ±2% Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 3V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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AP7335-30WG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±2% Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 3V Kind of package: reel; tape Case: SOT25 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AP7335-33SNG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFN6; SMD Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335 Input voltage: 2...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 3.3V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP7335A-50SN-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DFN6; SMD; ±1% Tolerance: ±1% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335A Input voltage: 4.3...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 5V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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AP7335A-50W-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT25; SMD; ±1% Tolerance: ±1% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7335A-50 Input voltage: 5.5...6V Output current: 0.3A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Output voltage: 5V Kind of package: reel; tape Case: SOT25 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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GBU801 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMN62D0LFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75mA Pulsed drain current: 1A Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.9nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN62D0LFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75mA Pulsed drain current: 1A Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.9nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
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PI5L200WE | DIODES INCORPORATED |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 4; SO16; 137MHz Type of integrated circuit: analog switch Number of channels: 4 Case: SO16 Mounting: SMD Resistance: 12Ω Operating temperature: -40...85°C Bandwidth: 137MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMCJ160A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 160V Breakdown voltage: 178...197V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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SMCJ16CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 57.7A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDT10100CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.76V Max. forward impulse current: 90A Kind of package: tube Leakage current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDTA114TCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DDTA114YLP-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2204RB-5.0TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2% Manufacturer series: AP2204 Operating temperature: -40...125°C Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 2.6...24V Output current: 0.2A Type of integrated circuit: voltage regulator Voltage drop: 0.5V Output voltage: 5V Kind of package: reel; tape Case: SOT89 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMC2020USD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Version: ESD Drain current: 6.3/-7.8A Kind of channel: enhancement Drain-source voltage: 20/-20V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±10V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 0.02/0.033Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMP2010UFV-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP22655WU-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Output current: 3.1A Type of integrated circuit: power switch Operating temperature: -40...85°C Kind of package: reel; tape Case: TSOT26 Kind of integrated circuit: USB switch Number of channels: 1 On-state resistance: 85mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| SMCJ170CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KBJ408G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Case: KBJ Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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KBJ404G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KBJ4005G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KBJ401G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847B-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DESD1CAN2SOQ-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 25.4V Semiconductor structure: bidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 50nA Number of channels: 2 Capacitance: 17pF Application: automotive industry; CAN Kind of package: reel; tape |
на замовлення 178 шт: термін постачання 14-30 дні (днів) |
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ZTX415STZ | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.68W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 40MHz |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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AZ23C6V8W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 6.8V; SMD; SOT323; double,common anode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Case: SOT323 Semiconductor structure: common anode; double Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZMR330QFTA | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 3.3V; 0.05A; SOT23; SMD; ZMR Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 0.005V Output voltage: 3.3V Output current: 50mA Case: SOT23 Mounting: SMD Manufacturer series: ZMR Kind of package: reel; tape Operating temperature: -50...125°C Number of channels: 1 Application: automotive industry Input voltage: 7...25V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BSS138DWK-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; 50V; 310mA; 330mW; SOT363 Type of transistor: N-MOSFET x2 Drain-source voltage: 50V Drain current: 0.31A Power dissipation: 0.33W Case: SOT363 Mounting: SMD Kind of channel: enhancement Gate charge: 0.8nC |
на замовлення 10000 шт: термін постачання 14-30 дні (днів) |
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AP2401S-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Mounting: SMD Supply voltage: 2.7...5.5V DC Active logical level: low Output current: 2A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: SO8 Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 70mΩ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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AN431AN-ATRG1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 559 шт: термін постачання 14-30 дні (днів) |
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SBR2045CT-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 45V; 10Ax2; Ifsm: 120A; TO220AB; tube; SBR® Type of diode: rectifying Case: TO220AB Technology: SBR® Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B380B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 80V; 3A; reel,tape Max. forward impulse current: 100A Max. forward voltage: 0.79V Max. off-state voltage: 80V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 20mA Case: SMB Capacitance: 0.12nF Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| B380-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape Max. forward impulse current: 100A Max. forward voltage: 0.79V Max. off-state voltage: 80V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 20mA Case: SMC Capacitance: 0.1nF Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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SB380-T | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V Max. forward impulse current: 100A Max. forward voltage: 0.79V Max. off-state voltage: 80V Load current: 3A Kind of package: reel Semiconductor structure: single diode Case: DO201AD Type of diode: Schottky rectifying Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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FS1MED-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1µs Semiconductor structure: single diode Case: DO219AA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FMMT558TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.15A Power dissipation: 0.5W Case: SOT23 Current gain: 15...300 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Manufacturer standard package: 3000pcs. |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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FMMT558QTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.15A Power dissipation: 0.5W Case: SOT23 Current gain: 15...300 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Manufacturer standard package: 3000pcs. Application: automotive industry |
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SMBJ51CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||
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SMBJ51A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
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SMBJ51AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||
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SMBJ78CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 86.7...99.7V Max. forward impulse current: 4.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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DFLS1150-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 50A Kind of package: reel; tape |
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DFLS1150Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; 13ns Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 50A Kind of package: reel; tape Reverse recovery time: 13ns Application: automotive industry Leakage current: 2µA Capacitance: 28pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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AP7343D-33W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.31V Output voltage: 3.3V Output current: 0.3A Case: SOT25 Mounting: SMD Manufacturer series: AP7343 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.7...5.25V Integrated circuit features: output discharge; shutdown mode control input |
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В кошику од. на суму грн. | ||||||||||||||||
| DMP6018LPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: -240A Power dissipation: 2.6W Gate charge: 13.7nC Polarisation: unipolar Drain current: -48A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 26mΩ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT6018LDR-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Case: V-DFN3030-8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: 50A Power dissipation: 1.2W Gate charge: 13.9nC Polarisation: unipolar Drain current: 9.1A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 26mΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT6018LDR-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Case: V-DFN3030-8 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: 50A Power dissipation: 1.2W Gate charge: 13.9nC Polarisation: unipolar Drain current: 9.1A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 26mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMP6018LPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: -240A Power dissipation: 2.6W Gate charge: 13.7nC Polarisation: unipolar Drain current: -48A Kind of channel: enhancement Drain-source voltage: -60V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 26mΩ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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SBR140S1F-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 40V; 1A; SOD123F; SBR®; reel,tape Type of diode: rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Technology: SBR® |
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В кошику од. на суму грн. | ||||||||||||||||
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ZXTR2105F-7 | DIODES INCORPORATED |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT23; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 15mA Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Tolerance: ±5% Number of channels: 1 Input voltage: 7...60V |
на замовлення 3470 шт: термін постачання 14-30 дні (днів) |
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BAT54-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 7425 шт: термін постачання 14-30 дні (днів) |
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| DMP1022UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Pulsed drain current: -90A Power dissipation: 1.3W Gate charge: 48.3nC Polarisation: unipolar Drain current: -8.8A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET |
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В кошику од. на суму грн. | |||||||||||||||||
| DMP1022UFDEQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W Mounting: SMD Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 0.16Ω Pulsed drain current: -90A Power dissipation: 1.3W Gate charge: 42.6nC Polarisation: unipolar Drain current: -9A Kind of channel: enhancement Drain-source voltage: -12V Application: automotive industry Type of transistor: P-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMN2022UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Power dissipation: 0.42W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 50mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
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В кошику од. на суму грн. |
| AP7335-18WG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 1.8V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT25; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 1.8V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
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В кошику
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| AP7335-20SNG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.3A; DFN6; SMD; ±2%
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.3A; DFN6; SMD; ±2%
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| AP7335-25SNG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFN6; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2.5V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFN6; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2.5V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| AP7335-25WG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2.5V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2.5V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
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В кошику
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| AP7335-28WG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2.8V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 2.8V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
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| AP7335-30SNG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN6; SMD; ±2%
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN6; SMD; ±2%
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP7335-30WG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±2%
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±2%
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| AP7335-33SNG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFN6; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFN6; SMD
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335
Input voltage: 2...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
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В кошику
од. на суму грн.
| AP7335A-50SN-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DFN6; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335A
Input voltage: 4.3...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 5V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DFN6; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335A
Input voltage: 4.3...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 5V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP7335A-50W-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT25; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335A-50
Input voltage: 5.5...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 5V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT25; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7335A-50
Input voltage: 5.5...6V
Output current: 0.3A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Output voltage: 5V
Kind of package: reel; tape
Case: SOT25
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| GBU801 |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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В кошику
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| DMN62D0LFB-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN62D0LFB-7B |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75mA; Idm: 1A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75mA
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 10000 шт
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| PI5L200WE |
|
Виробник: DIODES INCORPORATED
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; SO16; 137MHz
Type of integrated circuit: analog switch
Number of channels: 4
Case: SO16
Mounting: SMD
Resistance: 12Ω
Operating temperature: -40...85°C
Bandwidth: 137MHz
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; SO16; 137MHz
Type of integrated circuit: analog switch
Number of channels: 4
Case: SO16
Mounting: SMD
Resistance: 12Ω
Operating temperature: -40...85°C
Bandwidth: 137MHz
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| SMCJ160A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
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| SMCJ16CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SDT10100CT |
|
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 10mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 10mA
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| DDTA114TCA-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Manufacturer standard package: 3000pcs.
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| DDTA114YLP-7 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
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| AP2204RB-5.0TRG1 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Manufacturer series: AP2204
Operating temperature: -40...125°C
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...24V
Output current: 0.2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Output voltage: 5V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Manufacturer series: AP2204
Operating temperature: -40...125°C
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...24V
Output current: 0.2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Output voltage: 5V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
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Мінімальне замовлення: 1000 шт
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| DMC2020USD-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Version: ESD
Drain current: 6.3/-7.8A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 0.02/0.033Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Version: ESD
Drain current: 6.3/-7.8A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 0.02/0.033Ω
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| DMP2010UFV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| AP22655WU-7 |
|
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Output current: 3.1A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: USB switch
Number of channels: 1
On-state resistance: 85mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Output current: 3.1A
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TSOT26
Kind of integrated circuit: USB switch
Number of channels: 1
On-state resistance: 85mΩ
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Мінімальне замовлення: 3000 шт
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| SMCJ170CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| KBJ408G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: KBJ
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Case: KBJ
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.76 грн |
| 10+ | 47.70 грн |
| 20+ | 44.24 грн |
| 40+ | 40.52 грн |
| KBJ404G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| KBJ4005G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| KBJ401G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| BC847B-13-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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Мінімальне замовлення: 10000 шт
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| DESD1CAN2SOQ-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 25.4V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Capacitance: 17pF
Application: automotive industry; CAN
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 25.4V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 50nA
Number of channels: 2
Capacitance: 17pF
Application: automotive industry; CAN
Kind of package: reel; tape
на замовлення 178 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.33 грн |
| 18+ | 22.94 грн |
| 21+ | 20.38 грн |
| 100+ | 12.87 грн |
| ZTX415STZ |
|
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
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Мінімальне замовлення: 2000 шт
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| AZ23C6V8W-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; SOT323; double,common anode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: common anode; double
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; SOT323; double,common anode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: common anode; double
Kind of package: reel; tape
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| ZMR330QFTA |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 3.3V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Application: automotive industry
Input voltage: 7...25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.05A; SOT23; SMD; ZMR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 0.005V
Output voltage: 3.3V
Output current: 50mA
Case: SOT23
Mounting: SMD
Manufacturer series: ZMR
Kind of package: reel; tape
Operating temperature: -50...125°C
Number of channels: 1
Application: automotive industry
Input voltage: 7...25V
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Мінімальне замовлення: 3000 шт
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| BSS138DWK-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 50V; 310mA; 330mW; SOT363
Type of transistor: N-MOSFET x2
Drain-source voltage: 50V
Drain current: 0.31A
Power dissipation: 0.33W
Case: SOT363
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.8nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 50V; 310mA; 330mW; SOT363
Type of transistor: N-MOSFET x2
Drain-source voltage: 50V
Drain current: 0.31A
Power dissipation: 0.33W
Case: SOT363
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.8nC
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.56 грн |
| AP2401S-13 |
|
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 70mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 70mΩ
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Мінімальне замовлення: 2500 шт
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| AN431AN-ATRG1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 559 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.78 грн |
| 57+ | 7.26 грн |
| 66+ | 6.27 грн |
| 82+ | 5.08 грн |
| 100+ | 4.13 грн |
| SBR2045CT-G |
|
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; Ifsm: 120A; TO220AB; tube; SBR®
Type of diode: rectifying
Case: TO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; Ifsm: 120A; TO220AB; tube; SBR®
Type of diode: rectifying
Case: TO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 20A
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| B380B-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 0.12nF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 0.12nF
Type of diode: Schottky rectifying
Mounting: SMD
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| B380-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.1nF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMC
Capacitance: 0.1nF
Type of diode: Schottky rectifying
Mounting: SMD
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Мінімальне замовлення: 3000 шт
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| SB380-T |
|
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 3A; DO201AD; Ufmax: 0.79V
Max. forward impulse current: 100A
Max. forward voltage: 0.79V
Max. off-state voltage: 80V
Load current: 3A
Kind of package: reel
Semiconductor structure: single diode
Case: DO201AD
Type of diode: Schottky rectifying
Mounting: THT
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Мінімальне замовлення: 3 шт
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| FS1MED-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1us; DO219AA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| FMMT558TA |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.44 грн |
| 19+ | 22.37 грн |
| FMMT558QTA |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.15A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Current gain: 15...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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| SMBJ51CAQ-13-F |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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| SMBJ51A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMBJ51AQ-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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| SMBJ78CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DFLS1150-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| DFLS1150Q-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; 13ns
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 13ns
Application: automotive industry
Leakage current: 2µA
Capacitance: 28pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 150V; 1A; 13ns
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 13ns
Application: automotive industry
Leakage current: 2µA
Capacitance: 28pF
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Мінімальне замовлення: 3000 шт
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| AP7343D-33W5-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7343
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7343
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
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| DMP6018LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
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Мінімальне замовлення: 2500 шт
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| DMT6018LDR-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
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Мінімальне замовлення: 10000 шт
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| DMT6018LDR-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 13.9nC
Polarisation: unipolar
Drain current: 9.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
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Мінімальне замовлення: 3000 шт
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| DMP6018LPSQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: -240A
Power dissipation: 2.6W
Gate charge: 13.7nC
Polarisation: unipolar
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 26mΩ
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Мінімальне замовлення: 2500 шт
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| SBR140S1F-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 40V; 1A; SOD123F; SBR®; reel,tape
Type of diode: rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SBR®
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 40V; 1A; SOD123F; SBR®; reel,tape
Type of diode: rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SBR®
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| ZXTR2105F-7 |
|
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT23; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...60V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT23; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...60V
на замовлення 3470 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.77 грн |
| 22+ | 19.48 грн |
| 24+ | 17.33 грн |
| 28+ | 14.94 грн |
| 50+ | 13.62 грн |
| 100+ | 13.45 грн |
| BAT54-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 7425 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.44 грн |
| 59+ | 7.10 грн |
| 65+ | 6.44 грн |
| 86+ | 4.85 грн |
| 100+ | 4.13 грн |
| 500+ | 2.92 грн |
| 789+ | 1.19 грн |
| 2171+ | 1.12 грн |
| DMP1022UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 48.3nC
Polarisation: unipolar
Drain current: -8.8A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMP1022UFDEQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.16Ω
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 42.6nC
Polarisation: unipolar
Drain current: -9A
Kind of channel: enhancement
Drain-source voltage: -12V
Application: automotive industry
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 0.16Ω
Pulsed drain current: -90A
Power dissipation: 1.3W
Gate charge: 42.6nC
Polarisation: unipolar
Drain current: -9A
Kind of channel: enhancement
Drain-source voltage: -12V
Application: automotive industry
Type of transistor: P-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN2022UFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.