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SMAJ10CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+8.44 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ZVN4525E6TA ZVN4525E6TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B180CEA9C28000C4&compId=ZVN4525E6TA.pdf?ci_sign=7831f48c8344e2b8cc6c2283f41e2441730705f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)
7+71.44 грн
10+45.32 грн
30+39.88 грн
31+31.33 грн
83+29.65 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMN3023L-13 DMN3023L-13 DIODES INCORPORATED DMN3023L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
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KBP06G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AP1501-K5G-13 AP1501-K5G-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA621F8450DE28&compId=AP1501x-DTE.pdf?ci_sign=2aa117d64e708554a3d2bc14dc84a3bbd1987197 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
на замовлення 697 шт:
термін постачання 21-30 дні (днів)
3+171.29 грн
10+119.09 грн
25+109.50 грн
50+103.91 грн
100+99.11 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AP1501A-K5G-13 AP1501A-K5G-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA71D5F45F5E28&compId=AP1501A-DTE.pdf?ci_sign=a678e9cf519da03357a4612bd123d15b13ce3496 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 72%
на замовлення 606 шт:
термін постачання 21-30 дні (днів)
3+194.53 грн
10+135.08 грн
11+89.52 грн
29+84.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DPC817S-B-TR DPC817S-B-TR DIODES INCORPORATED DPC817-Series.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 35V
Case: SMD4
Max. off-state voltage: 6V
Number of pins: 4
на замовлення 2996000 шт:
термін постачання 21-30 дні (днів)
4000+2.89 грн
Мінімальне замовлення: 4000
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B150B-13-F B150B-13-F DIODES INCORPORATED B120_B-B160_B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 1652 шт:
термін постачання 21-30 дні (днів)
23+18.94 грн
27+15.35 грн
28+14.47 грн
100+12.07 грн
206+4.56 грн
566+4.32 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
B150-13-F B150-13-F DIODES INCORPORATED B120_B-B160_B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
39+10.39 грн
100+7.80 грн
Мінімальне замовлення: 28
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ZTX692B DIODES INCORPORATED ZTX692B.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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ZTX692BSTZ DIODES INCORPORATED ZTX692B.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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SMBJ51CAQ-13-F DIODES INCORPORATED Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMT8008LFG-13 DIODES INCORPORATED DMT8008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Gate charge: 37.7nC
On-state resistance: 10.4mΩ
Power dissipation: 2.5W
Drain current: 13A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 192A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8008LFG-7 DIODES INCORPORATED DMT8008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Gate charge: 37.7nC
On-state resistance: 10.4mΩ
Power dissipation: 2.5W
Drain current: 13A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 192A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8008LPS-13 DIODES INCORPORATED DMT8008LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Gate charge: 41.2nC
On-state resistance: 11mΩ
Power dissipation: 2.8W
Drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 330A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8008SPS-13 DIODES INCORPORATED DMT8008SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 11mΩ
Power dissipation: 2.8W
Drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 330A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LFG-13 DIODES INCORPORATED DMT8012LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LFG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA98713DFC98BF&compId=DMT8012LFG.pdf?ci_sign=2f394e548e5183562151e1b893b891c5d29b54aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 30A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LK3-13 DIODES INCORPORATED DMT8012LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 22mΩ
Power dissipation: 2.7W
Drain current: 28A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LPS-13 DIODES INCORPORATED DMT8012LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 21mΩ
Power dissipation: 2.1W
Drain current: 7.2A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LSS-13 DMT8012LSS-13 DIODES INCORPORATED DMT8012LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 20mΩ
Power dissipation: 2W
Drain current: 7.8A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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RDBF310-13 DIODES INCORPORATED RDBF31-RDBF310.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
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SDM20E40C-7-F SDM20E40C-7-F DIODES INCORPORATED ds30276.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 40V; 0.4A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 0.1nF
Leakage current: 70µA
Load current: 0.4A
Max. forward voltage: 0.5V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Case: SC59
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SDM20U30Q-7 DIODES INCORPORATED SDM20U30Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 20pF
Leakage current: 0.15mA
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SOD523
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SDM20U30LPQ-7 DIODES INCORPORATED SDM20U30LPQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 3ns
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 20pF
Reverse recovery time: 3ns
Leakage current: 0.15mA
Power dissipation: 0.25W
Load current: 0.2A
Max. forward voltage: 0.575V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Application: automotive industry
Semiconductor structure: single diode
Case: X1-DFN1006-2
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SDM20U40-13 DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
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SDM20U30LP-7 DIODES INCORPORATED ds30589.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 3ns
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 20pF
Reverse recovery time: 3ns
Leakage current: 0.15mA
Power dissipation: 0.25W
Load current: 0.2A
Max. forward voltage: 0.575V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: X1-DFN1006-2
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SDM20U40Q-7 DIODES INCORPORATED SDM20U40Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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ZTL431BQE5TA DIODES INCORPORATED ZTL431xQ-432xQ.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+16.53 грн
Мінімальне замовлення: 3000
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2DA1213Y-13
+1
 		2DA1213Y-13 DIODES INCORPORATED 2DA1213O_Y.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Collector current: 2A
Pulsed collector current: 2.5A
Current gain: 20...240
Collector-emitter voltage: 50V
Quantity in set/package: 2500pcs.
Frequency: 160MHz
Case: SOT89
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
12+36.15 грн
18+22.46 грн
100+14.39 грн
500+10.87 грн
1000+9.67 грн
Мінімальне замовлення: 12
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BZT52C18SQ-7-F BZT52C18SQ-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
81+4.96 грн
91+4.40 грн
124+3.25 грн
500+2.31 грн
1000+2.07 грн
Мінімальне замовлення: 63
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BZT52C18LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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DDTC113ZCA-7-F DIODES INCORPORATED ds30330.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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DDTC113ZUA-7-F DDTC113ZUA-7-F DIODES INCORPORATED ds30322.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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DDTC113TCA-7-F DIODES INCORPORATED DDTC_R1-ONLY_SERIES_CA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 1kΩ
Frequency: 250MHz
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DDTC113ZE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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74AHCT1G14QSE-7 DIODES INCORPORATED 74AHCT1G14Q.pdf Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
Kind of output: push-pull
Number of inputs: 1
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74AHCT1G14W5-7 74AHCT1G14W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BFC571780D3&compId=74AHCT1G14.pdf?ci_sign=143428799834483b462ce43a44486b2f1effe0f8 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
Kind of integrated circuit: inverter
Kind of output: push-pull
Number of inputs: 1
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SDT8A100P5-7 DIODES INCORPORATED SDT8A100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 150A
Kind of package: reel; tape
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DMN3013LDG-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 17.7mΩ
Drain current: 7.6A
Power dissipation: 1.25W
Gate-source voltage: ±10V
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of channel: enhancement
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BZX84B5V6Q-7-F BZX84B5V6Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984FFF35B0C8E98BF&compId=BZX84Bxxx.pdf?ci_sign=5426ac85d9dcd56b8ba7cd20adb8a05f5fb67a1c Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1720 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
79+5.12 грн
92+4.36 грн
139+2.89 грн
500+2.05 грн
1000+1.83 грн
Мінімальне замовлення: 63
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DZ23C5V6-7-F DIODES INCORPORATED DZ23C2V7-DZ23C51.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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BZX84B5V6-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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DDZ9713-7 DDZ9713-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Kind of package: reel; tape
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DDZ9713T-7 DIODES INCORPORATED ds30553.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 30V; SMD; reel,tape; SOD523; single diode
Mounting: SMD
Semiconductor structure: single diode
Case: SOD523
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 30V
Kind of package: reel; tape
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SMAJ120A-13-F SMAJ120A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1075 шт:
термін постачання 21-30 дні (днів)
25+17.22 грн
29+13.91 грн
34+11.99 грн
45+9.08 грн
100+5.57 грн
500+4.26 грн
Мінімальне замовлення: 25
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SMAJ120CA-13-F SMAJ120CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
38+10.55 грн
44+9.27 грн
100+5.75 грн
250+4.96 грн
500+4.64 грн
1000+4.40 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
74LV00AS14-13 74LV00AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E30F971A0D3&compId=74LV00A.pdf?ci_sign=bea31dbefe699394aeaf8d1d876de4f53a87cecd Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: NAND
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
на замовлення 2384 шт:
термін постачання 21-30 дні (днів)
29+14.98 грн
33+12.39 грн
100+10.71 грн
117+8.15 грн
320+7.67 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
74LV07AS14-13 74LV07AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE8D207EE67E28&compId=74LV07A.pdf?ci_sign=a485b9c48c1c1b9288831a6236cfd3101521bf2f Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO14; LV; 20uA
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 6
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Quiescent current: 20µA
Supply voltage: 2...5.5V DC
Kind of output: open drain
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Manufacturer series: LV
на замовлення 894 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
31+13.19 грн
35+11.59 грн
100+9.99 грн
250+9.19 грн
500+8.71 грн
Мінімальне замовлення: 20
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74LVC06AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E8DABFA00D3&compId=74LVC06A.pdf?ci_sign=e11760c57650f73201903eb54d95446961b557fb Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; -40÷150°C; 1.65÷5.5VDC
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LVC
Kind of package: reel; tape
Case: SO14
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74LVC08AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EEC2D14A0D3&compId=74LVC08A.pdf?ci_sign=2b7645520c9c62cf91f7b24b0a1655c6d66c5459 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Family: LVC
Kind of package: reel; tape
Case: SO14
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74LV05AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDBCA0D3&compId=74LV05A.pdf?ci_sign=583876372cfc54bd8a81ea35dd30d73b36dfd077 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV04AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDBAA0D3&compId=74LV04A.pdf?ci_sign=74c0cfe4d41dbc6e34d1212916c4133ed9c107c4 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV06AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC385D180D3&compId=74LV06A.pdf?ci_sign=e842100f12c0c07ccbfbb9e482046409796d9258 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV08AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC020D3&compId=74LV08A.pdf?ci_sign=66f2bc77e81a98f832b9073059796e63ea26b7f6 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74LV132AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC220D3&compId=74LV132A.pdf?ci_sign=8e84f77c8a1bbff51f27f8f357c70ec227e1fcc2 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: NAND
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV32AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC620D3&compId=74LV32A.pdf?ci_sign=87841e636f13a992c7affef2dc8ba6c8b4138e62 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: OR
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV86AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E43286D40D3&compId=74LV86A.pdf?ci_sign=2756681fccc426c20fdb4f6ce2eecb5ff1849f92 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: XOR
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LVC126AS14-13 74LVC126AS14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF79CA984C100C7&compId=74LVC126AS14-13.PDF?ci_sign=6559ddab03406444051b6c8c5feb94335b4b00d5 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; LVC; -40÷125°C
Mounting: SMD
Manufacturer series: LVC
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SO14
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DF04M DF04M DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA1FF160CC11940C7&compId=DF005_10M.pdf?ci_sign=2f24257723bce9869f6db8061fe3b748fd7f107c Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SMAJ10CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+8.44 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ZVN4525E6TA pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B180CEA9C28000C4&compId=ZVN4525E6TA.pdf?ci_sign=7831f48c8344e2b8cc6c2283f41e2441730705f2
ZVN4525E6TA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.23A; Idm: 1.44A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.23A
Pulsed drain current: 1.44A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 242 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+71.44 грн
10+45.32 грн
30+39.88 грн
31+31.33 грн
83+29.65 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMN3023L-13 DMN3023L.pdf
DMN3023L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 18.4nC
Pulsed drain current: 44A
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KBP06G ds21203.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AP1501-K5G-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA621F8450DE28&compId=AP1501x-DTE.pdf?ci_sign=2aa117d64e708554a3d2bc14dc84a3bbd1987197
AP1501-K5G-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
на замовлення 697 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+171.29 грн
10+119.09 грн
25+109.50 грн
50+103.91 грн
100+99.11 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AP1501A-K5G-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA71D5F45F5E28&compId=AP1501A-DTE.pdf?ci_sign=a678e9cf519da03357a4612bd123d15b13ce3496
AP1501A-K5G-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 5A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 72%
на замовлення 606 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+194.53 грн
10+135.08 грн
11+89.52 грн
29+84.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DPC817S-B-TR DPC817-Series.pdf
DPC817S-B-TR
Виробник: DIODES INCORPORATED
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 35V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 35V
Case: SMD4
Max. off-state voltage: 6V
Number of pins: 4
на замовлення 2996000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+2.89 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
B150B-13-F B120_B-B160_B.pdf
B150B-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 1652 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.94 грн
27+15.35 грн
28+14.47 грн
100+12.07 грн
206+4.56 грн
566+4.32 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
B150-13-F B120_B-B160_B.pdf
B150-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
39+10.39 грн
100+7.80 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
ZTX692B ZTX692B.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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ZTX692BSTZ ZTX692B.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 70V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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SMBJ51CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMT8008LFG-13 DMT8008LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Gate charge: 37.7nC
On-state resistance: 10.4mΩ
Power dissipation: 2.5W
Drain current: 13A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 192A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8008LFG-7 DMT8008LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Gate charge: 37.7nC
On-state resistance: 10.4mΩ
Power dissipation: 2.5W
Drain current: 13A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 192A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8008LPS-13 DMT8008LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Gate charge: 41.2nC
On-state resistance: 11mΩ
Power dissipation: 2.8W
Drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 330A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8008SPS-13 DMT8008SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 11mΩ
Power dissipation: 2.8W
Drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 330A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LFG-13 DMT8012LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LFG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986CA98713DFC98BF&compId=DMT8012LFG.pdf?ci_sign=2f394e548e5183562151e1b893b891c5d29b54aa
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
On-state resistance: 22mΩ
Power dissipation: 2.2W
Drain current: 30A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LK3-13 DMT8012LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 22mΩ
Power dissipation: 2.7W
Drain current: 28A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LPS-13 DMT8012LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 21mΩ
Power dissipation: 2.1W
Drain current: 7.2A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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DMT8012LSS-13 DMT8012LSS.pdf
DMT8012LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Gate charge: 34nC
On-state resistance: 20mΩ
Power dissipation: 2W
Drain current: 7.8A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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RDBF310-13 RDBF31-RDBF310.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
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SDM20E40C-7-F ds30276.pdf
SDM20E40C-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 40V; 0.4A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 0.1nF
Leakage current: 70µA
Load current: 0.4A
Max. forward voltage: 0.5V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Case: SC59
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SDM20U30Q-7 SDM20U30Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 20pF
Leakage current: 0.15mA
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SOD523
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SDM20U30LPQ-7 SDM20U30LPQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 3ns
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 20pF
Reverse recovery time: 3ns
Leakage current: 0.15mA
Power dissipation: 0.25W
Load current: 0.2A
Max. forward voltage: 0.575V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Application: automotive industry
Semiconductor structure: single diode
Case: X1-DFN1006-2
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SDM20U40-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
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SDM20U30LP-7 ds30589.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 3ns
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 20pF
Reverse recovery time: 3ns
Leakage current: 0.15mA
Power dissipation: 0.25W
Load current: 0.2A
Max. forward voltage: 0.575V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: X1-DFN1006-2
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SDM20U40Q-7 SDM20U40Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Leakage current: 5µA
Max. forward impulse current: 1A
Reverse recovery time: 10ns
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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ZTL431BQE5TA ZTL431xQ-432xQ.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+16.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2DA1213Y-13 2DA1213O_Y.pdf
2DA1213Y-13
+1
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Collector current: 2A
Pulsed collector current: 2.5A
Current gain: 20...240
Collector-emitter voltage: 50V
Quantity in set/package: 2500pcs.
Frequency: 160MHz
Case: SOT89
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.15 грн
18+22.46 грн
100+14.39 грн
500+10.87 грн
1000+9.67 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BZT52C18SQ-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C18SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
81+4.96 грн
91+4.40 грн
124+3.25 грн
500+2.31 грн
1000+2.07 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BZT52C18LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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DDTC113ZCA-7-F ds30330.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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DDTC113ZUA-7-F ds30322.pdf
DDTC113ZUA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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DDTC113TCA-7-F DDTC_R1-ONLY_SERIES_CA.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 1kΩ
Frequency: 250MHz
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DDTC113ZE-7-F ds30314.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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74AHCT1G14QSE-7 74AHCT1G14Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
Kind of output: push-pull
Number of inputs: 1
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74AHCT1G14W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BFC571780D3&compId=74AHCT1G14.pdf?ci_sign=143428799834483b462ce43a44486b2f1effe0f8
74AHCT1G14W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
Kind of integrated circuit: inverter
Kind of output: push-pull
Number of inputs: 1
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SDT8A100P5-7 SDT8A100P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 150A
Kind of package: reel; tape
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DMN3013LDG-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 17.7mΩ
Drain current: 7.6A
Power dissipation: 1.25W
Gate-source voltage: ±10V
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of channel: enhancement
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BZX84B5V6Q-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984FFF35B0C8E98BF&compId=BZX84Bxxx.pdf?ci_sign=5426ac85d9dcd56b8ba7cd20adb8a05f5fb67a1c
BZX84B5V6Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1720 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
79+5.12 грн
92+4.36 грн
139+2.89 грн
500+2.05 грн
1000+1.83 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
DZ23C5V6-7-F DZ23C2V7-DZ23C51.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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BZX84B5V6-7-F BZX84Bxxx.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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DDZ9713-7 ds30410.pdf
DDZ9713-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Kind of package: reel; tape
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DDZ9713T-7 ds30553.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 30V; SMD; reel,tape; SOD523; single diode
Mounting: SMD
Semiconductor structure: single diode
Case: SOD523
Type of diode: Zener
Power dissipation: 0.15W
Tolerance: ±5%
Zener voltage: 30V
Kind of package: reel; tape
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SMAJ120A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ120A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1075 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.22 грн
29+13.91 грн
34+11.99 грн
45+9.08 грн
100+5.57 грн
500+4.26 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ120CA-13-F SMAJ_ser.pdf
SMAJ120CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
38+10.55 грн
44+9.27 грн
100+5.75 грн
250+4.96 грн
500+4.64 грн
1000+4.40 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
74LV00AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E30F971A0D3&compId=74LV00A.pdf?ci_sign=bea31dbefe699394aeaf8d1d876de4f53a87cecd
74LV00AS14-13
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: NAND
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
на замовлення 2384 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
29+14.98 грн
33+12.39 грн
100+10.71 грн
117+8.15 грн
320+7.67 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
74LV07AS14-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEE8D207EE67E28&compId=74LV07A.pdf?ci_sign=a485b9c48c1c1b9288831a6236cfd3101521bf2f
74LV07AS14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO14; LV; 20uA
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 6
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Quiescent current: 20µA
Supply voltage: 2...5.5V DC
Kind of output: open drain
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Manufacturer series: LV
на замовлення 894 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
31+13.19 грн
35+11.59 грн
100+9.99 грн
250+9.19 грн
500+8.71 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
74LVC06AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E8DABFA00D3&compId=74LVC06A.pdf?ci_sign=e11760c57650f73201903eb54d95446961b557fb
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; -40÷150°C; 1.65÷5.5VDC
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LVC
Kind of package: reel; tape
Case: SO14
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74LVC08AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EEC2D14A0D3&compId=74LVC08A.pdf?ci_sign=2b7645520c9c62cf91f7b24b0a1655c6d66c5459
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Family: LVC
Kind of package: reel; tape
Case: SO14
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74LV05AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDBCA0D3&compId=74LV05A.pdf?ci_sign=583876372cfc54bd8a81ea35dd30d73b36dfd077
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV04AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDBAA0D3&compId=74LV04A.pdf?ci_sign=74c0cfe4d41dbc6e34d1212916c4133ed9c107c4
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV06AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC385D180D3&compId=74LV06A.pdf?ci_sign=e842100f12c0c07ccbfbb9e482046409796d9258
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Kind of output: open drain
Kind of integrated circuit: inverter
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV08AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC020D3&compId=74LV08A.pdf?ci_sign=66f2bc77e81a98f832b9073059796e63ea26b7f6
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LV
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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74LV132AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC220D3&compId=74LV132A.pdf?ci_sign=8e84f77c8a1bbff51f27f8f357c70ec227e1fcc2
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: NAND
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV32AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E66EDC620D3&compId=74LV32A.pdf?ci_sign=87841e636f13a992c7affef2dc8ba6c8b4138e62
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: OR
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LV86AS14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E43286D40D3&compId=74LV86A.pdf?ci_sign=2756681fccc426c20fdb4f6ce2eecb5ff1849f92
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 4
Kind of output: push-pull
Kind of gate: XOR
Technology: CMOS
Type of integrated circuit: digital
Family: LV
Kind of package: reel; tape
Case: SO14
Kind of input: with Schmitt trigger
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74LVC126AS14-13 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF79CA984C100C7&compId=74LVC126AS14-13.PDF?ci_sign=6559ddab03406444051b6c8c5feb94335b4b00d5
74LVC126AS14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; LVC; -40÷125°C
Mounting: SMD
Manufacturer series: LVC
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 1.65...5.5V DC
Number of channels: 4
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SO14
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DF04M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA1FF160CC11940C7&compId=DF005_10M.pdf?ci_sign=2f24257723bce9869f6db8061fe3b748fd7f107c
DF04M
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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