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74LVC1G08W5-7 74LVC1G08W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726B00D3&compId=74LVC1G08.pdf?ci_sign=27b1c9820a075aadbf516c5042119fb4b65b3766 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 1888 шт:
термін постачання 21-30 дні (днів)
50+8.89 грн
60+6.94 грн
66+6.28 грн
79+5.25 грн
100+4.21 грн
250+4.08 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
74LVC1G08SE-7 74LVC1G08SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE80D1A740767E28&compId=74LVC1G08.pdf?ci_sign=f78953fb7cc04bf2b1e94c615ac317f5e5e2b055 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
на замовлення 712 шт:
термін постачання 21-30 дні (днів)
42+10.67 грн
48+8.75 грн
55+7.60 грн
66+6.34 грн
75+5.57 грн
100+4.99 грн
250+4.44 грн
500+4.17 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
74AUP1G08FW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68A440D3&compId=74AUP1G08.pdf?ci_sign=8189107f91067d65f95a43f936905ac44260313f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of output: push-pull
Kind of input: with Schmitt trigger
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74LVC1G08FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726A00D3&compId=74LVC1G08.pdf?ci_sign=2e4b523ccae539314c3cab1654675629e464ff09 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G08FS3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB820D3&compId=74LVC1G08.pdf?ci_sign=4a91346335e695bdb5a0781cbbe979375e2f33e8 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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ZVP2110A ZVP2110A DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D87CAD4826011C&compId=ZVP2110A.pdf?ci_sign=11e25d5911442d79e44694623fb63e1f63288da7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 2221 шт:
термін постачання 21-30 дні (днів)
6+81.83 грн
10+50.96 грн
25+43.77 грн
50+39.06 грн
70+37.16 грн
100+35.18 грн
500+29.40 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ZVP2110ASTZ DIODES INCORPORATED ZVP2110A.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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SDM40E20LA-7 SDM40E20LA-7 DIODES INCORPORATED SDM40E20L_S_C_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
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SDM40E20LAQ-7 SDM40E20LAQ-7 DIODES INCORPORATED SDM40E20LSQ-AQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Application: automotive industry
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DFLZ15-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
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SMBJ85CA-13-F SMBJ85CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74AHC1G09SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02A20D3&compId=74AHC1G09.pdf?ci_sign=8e02f9bc78c62505d01c1b4e7686bb5c8f4d790b Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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74AHC1G09W5-7 74AHC1G09W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02B20D3&compId=74AHC1G09.pdf?ci_sign=20f92b3da402c9ac768b3c7a3ea3cb70b96f343c Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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DMP4065S-7 DMP4065S-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1BC5F71D738BF&compId=DMP4065S.pdf?ci_sign=4b4667a6162feb97eecdbb433462fbd1c588da01 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
On-state resistance: 0.1Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
на замовлення 5577 шт:
термін постачання 21-30 дні (днів)
18+25.79 грн
26+16.10 грн
50+11.23 грн
100+9.58 грн
500+6.94 грн
1000+6.28 грн
1500+5.86 грн
3000+5.37 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMP4025SFGQ-7 DMP4025SFGQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
7+65.82 грн
11+39.31 грн
100+25.60 грн
500+19.82 грн
1000+17.92 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMP4065SQ-7 DMP4065SQ-7 DIODES INCORPORATED DMP4065SQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain current: -2.7A
Drain-source voltage: -40V
Gate charge: 12.2nC
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4025SFGQ-13 DMP4025SFGQ-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-7 DIODES INCORPORATED DMP4013LFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: -8.3A
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4006SPSWQ-13 DIODES INCORPORATED DMP4006SPSWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4010SK3-13 DIODES INCORPORATED DMP4010SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4010SK3Q-13 DIODES INCORPORATED DMP4010SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4011SK3-13 DIODES INCORPORATED DMP4011SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SK3Q-13 DIODES INCORPORATED DMP4011SK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SPSQ-13 DIODES INCORPORATED DMP4011SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -300A
Drain current: -9.4A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 14mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-13 DIODES INCORPORATED DMP4013LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-7 DIODES INCORPORATED DMP4013LFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4013SPS-13 DIODES INCORPORATED DMP4013SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013SPSQ-13 DIODES INCORPORATED DMP4013SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4015SK3-13 DIODES INCORPORATED DMP4015SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -100A; 3.5W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -27A
Drain-source voltage: -40V
On-state resistance: 11mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4015SPSQ-13 DIODES INCORPORATED DMP4015SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -8.7A
Drain-source voltage: -40V
On-state resistance: 15mΩ
Power dissipation: 0.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4025LK3-13 DIODES INCORPORATED DMP4025LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -35A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.78W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSDQ-13 DMP4025LSDQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -28A
Drain current: -6.1A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSS-13 DMP4025LSS-13 DIODES INCORPORATED DMP4025LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSSQ-13 DMP4025LSSQ-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-13 DIODES INCORPORATED DMP4025SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-7 DIODES INCORPORATED DMP4025SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP25H18DLFDE-13 DIODES INCORPORATED DMP25H18DLFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 13 inch reel; tape
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DMP25H18DLFDE-7 DIODES INCORPORATED DMP25H18DLFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 7 inch reel; tape
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ZVN4206GVTA DIODES INCORPORATED ZVN4206GV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN3071LFR4-7 DIODES INCORPORATED DMN3071LFR4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 15A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.1W
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.5nC
On-state resistance: 75mΩ
Pulsed drain current: 15A
Gate-source voltage: ±20V
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DMTH4005SPS-13 DIODES INCORPORATED DMTH4005SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 49.1nC
On-state resistance: 3.7mΩ
Power dissipation: 150W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 320A
Kind of package: 13 inch reel; tape
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DMNH4005SPSQ-13 DIODES INCORPORATED DMNH4005SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 48nC
On-state resistance: 4mΩ
Power dissipation: 2.8W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 150A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMG1012T-13 DMG1012T-13 DIODES INCORPORATED DMG1012TQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
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SMCJ18CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ18CA-13-F SMCJ18CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZUMTS17NTA DIODES INCORPORATED ZUMTS17N.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 350mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT323
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
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AS358MMTR-G1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Integrated circuit features: low power
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S1MB-13-F S1MB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3007 шт:
термін постачання 21-30 дні (днів)
36+12.45 грн
46+9.08 грн
57+7.30 грн
100+6.56 грн
500+5.03 грн
1000+4.43 грн
1500+4.12 грн
3000+3.61 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
RS1MSWFM-7 DIODES INCORPORATED RS1MSWFM.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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BZT52C6V2LP-7 BZT52C6V2LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 1970 шт:
термін постачання 21-30 дні (днів)
27+16.90 грн
33+12.72 грн
38+10.98 грн
49+8.51 грн
100+5.70 грн
500+5.62 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BZX84B47-7-F DIODES INCORPORATED Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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US1MDF-13 DIODES INCORPORATED US1JDF.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FUS1ME DIODES INCORPORATED FUS1ME.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FES1JE DIODES INCORPORATED FES1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. load current: 1A
Max. forward impulse current: 30A
Application: automotive industry
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BZT52C12T-7 BZT52C12T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C12TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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DMN2230U-7 DMN2230U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9090ED1CDD8BF&compId=DMN2230U.pdf?ci_sign=925c8ebe97ee64d169ed4cefa8663301a8dcaecc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.23Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
35+12.81 грн
45+9.58 грн
100+8.51 грн
500+8.01 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
DMN2230UQ-7 DMN2230UQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9103799AD78BF&compId=DMN2230UQ.pdf?ci_sign=3e06f057d16521d57eebbb63003e460e2d9558d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
13+35.58 грн
18+24.03 грн
50+16.77 грн
100+14.29 грн
Мінімальне замовлення: 13
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PDU620-13 DIODES INCORPORATED ds30760.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; Ufmax: 940mV; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. load current: 6A
Max. forward impulse current: 150A
Leakage current: 5µA
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+34.24 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
74LVC1G08W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726B00D3&compId=74LVC1G08.pdf?ci_sign=27b1c9820a075aadbf516c5042119fb4b65b3766
74LVC1G08W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 1888 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.89 грн
60+6.94 грн
66+6.28 грн
79+5.25 грн
100+4.21 грн
250+4.08 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
74LVC1G08SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE80D1A740767E28&compId=74LVC1G08.pdf?ci_sign=f78953fb7cc04bf2b1e94c615ac317f5e5e2b055
74LVC1G08SE-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
на замовлення 712 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.67 грн
48+8.75 грн
55+7.60 грн
66+6.34 грн
75+5.57 грн
100+4.99 грн
250+4.44 грн
500+4.17 грн
Мінімальне замовлення: 42
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74AUP1G08FW5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70C8A68A440D3&compId=74AUP1G08.pdf?ci_sign=8189107f91067d65f95a43f936905ac44260313f
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of output: push-pull
Kind of input: with Schmitt trigger
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74LVC1G08FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FAB726A00D3&compId=74LVC1G08.pdf?ci_sign=2e4b523ccae539314c3cab1654675629e464ff09
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G08FS3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F872EB820D3&compId=74LVC1G08.pdf?ci_sign=4a91346335e695bdb5a0781cbbe979375e2f33e8
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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ZVP2110A pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D87CAD4826011C&compId=ZVP2110A.pdf?ci_sign=11e25d5911442d79e44694623fb63e1f63288da7
ZVP2110A
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 2221 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+81.83 грн
10+50.96 грн
25+43.77 грн
50+39.06 грн
70+37.16 грн
100+35.18 грн
500+29.40 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ZVP2110ASTZ ZVP2110A.pdf
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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SDM40E20LA-7 SDM40E20L_S_C_A.pdf
SDM40E20LA-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
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SDM40E20LAQ-7 SDM40E20LSQ-AQ.pdf
SDM40E20LAQ-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Leakage current: 0.25mA
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Application: automotive industry
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DFLZ15-7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAE8EBAC87DA780C7&compId=DFLZ-ser.pdf?ci_sign=a758816f1039b103ccd1e0e2045fe0faf1e403d1
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
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SMBJ85CA-13-F SMBJ_ser.pdf
SMBJ85CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74AHC1G09SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02A20D3&compId=74AHC1G09.pdf?ci_sign=8e02f9bc78c62505d01c1b4e7686bb5c8f4d790b
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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74AHC1G09W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02B20D3&compId=74AHC1G09.pdf?ci_sign=20f92b3da402c9ac768b3c7a3ea3cb70b96f343c
74AHC1G09W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AHC
Kind of input: with Schmitt trigger
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DMP4065S-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1BC5F71D738BF&compId=DMP4065S.pdf?ci_sign=4b4667a6162feb97eecdbb433462fbd1c588da01
DMP4065S-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
On-state resistance: 0.1Ω
Power dissipation: 0.72W
Gate-source voltage: ±20V
на замовлення 5577 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.79 грн
26+16.10 грн
50+11.23 грн
100+9.58 грн
500+6.94 грн
1000+6.28 грн
1500+5.86 грн
3000+5.37 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMP4025SFGQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1
DMP4025SFGQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.82 грн
11+39.31 грн
100+25.60 грн
500+19.82 грн
1000+17.92 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMP4065SQ-7 DMP4065SQ.pdf
DMP4065SQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -20A
Drain current: -2.7A
Drain-source voltage: -40V
Gate charge: 12.2nC
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4025SFGQ-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E186DF3147D8BF&compId=DMP4025SFGQ.pdf?ci_sign=4aa131b446a52f608ac7e6eaf2e2bf2e36fdb6e1
DMP4025SFGQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: -5.4A
Drain-source voltage: -40V
On-state resistance: 45mΩ
Power dissipation: 0.81W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-7 DMP4013LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: -8.3A
Drain-source voltage: -40V
On-state resistance: 13mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4006SPSWQ-13 DMP4006SPSWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4010SK3-13 DMP4010SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4010SK3Q-13 DMP4010SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -12A
Drain-source voltage: -40V
Gate charge: 91nC
On-state resistance: 14mΩ
Power dissipation: 3.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4011SK3-13 DMP4011SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SK3Q-13 DMP4011SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 19mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4011SPSQ-13 DMP4011SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -300A
Drain current: -9.4A
Drain-source voltage: -40V
Gate charge: 52nC
On-state resistance: 14mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFG-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-13 DMP4013LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013LFGQ-7 DMP4013LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -11A
Drain-source voltage: -40V
Gate charge: 68.6nC
On-state resistance: 18mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP4013SPS-13 DMP4013SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4013SPSQ-13 DMP4013SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -244A
Drain current: -9A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 23mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4015SK3-13 DMP4015SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -100A; 3.5W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -27A
Drain-source voltage: -40V
On-state resistance: 11mΩ
Power dissipation: 3.5W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4015SPSQ-13 DMP4015SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI®5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -8.7A
Drain-source voltage: -40V
On-state resistance: 15mΩ
Power dissipation: 0.8W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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DMP4025LK3-13 DMP4025LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -35A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.78W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSDQ-13
DMP4025LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -28A
Drain current: -6.1A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.14W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSS-13 DMP4025LSS.pdf
DMP4025LSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025LSSQ-13
DMP4025LSSQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -30A
Drain current: -6.9A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-13 DMP4025SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMP4025SFG-7 DMP4025SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -5.77A
Drain-source voltage: -40V
Gate charge: 33.7nC
On-state resistance: 45mΩ
Power dissipation: 1.95W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMP25H18DLFDE-13 DMP25H18DLFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 13 inch reel; tape
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DMP25H18DLFDE-7 DMP25H18DLFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: -250V
Pulsed drain current: -1A
Drain current: -210mA
Gate charge: 2.8nC
Power dissipation: 1.4W
On-state resistance: 18Ω
Gate-source voltage: ±40V
Kind of package: 7 inch reel; tape
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ZVN4206GVTA ZVN4206GV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMN3071LFR4-7 DMN3071LFR4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 15A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.1W
Case: X2-DFN1010-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.5nC
On-state resistance: 75mΩ
Pulsed drain current: 15A
Gate-source voltage: ±20V
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DMTH4005SPS-13 DMTH4005SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 49.1nC
On-state resistance: 3.7mΩ
Power dissipation: 150W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 320A
Kind of package: 13 inch reel; tape
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DMNH4005SPSQ-13 DMNH4005SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 48nC
On-state resistance: 4mΩ
Power dissipation: 2.8W
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 150A
Kind of package: 13 inch reel; tape
Application: automotive industry
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.28W
Case: SOT523
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 736.6pC
Pulsed drain current: 3A
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SMCJ18CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ18CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ18CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZUMTS17NTA ZUMTS17N.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 350mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT323
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
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AS358MMTR-G1 AS358-358A-358B.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; MSOP8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Integrated circuit features: low power
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S1MB-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE798DC09889D44E748&compId=s1ab-s1mb.pdf?ci_sign=f029a672dbe79fbc6bb646f22fd621c71fa9433e
S1MB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Capacitance: 10pF
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3007 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.45 грн
46+9.08 грн
57+7.30 грн
100+6.56 грн
500+5.03 грн
1000+4.43 грн
1500+4.12 грн
3000+3.61 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
RS1MSWFM-7 RS1MSWFM.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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В кошику  од. на суму  грн.
BZT52C6V2LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
BZT52C6V2LP-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 1970 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.90 грн
33+12.72 грн
38+10.98 грн
49+8.51 грн
100+5.70 грн
500+5.62 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BZX84B47-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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US1MDF-13 US1JDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FUS1ME FUS1ME.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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FES1JE FES1JE.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. load current: 1A
Max. forward impulse current: 30A
Application: automotive industry
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BZT52C12T-7 BZT52CxxT_ser.pdf
BZT52C12T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C12TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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DMN2230U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9090ED1CDD8BF&compId=DMN2230U.pdf?ci_sign=925c8ebe97ee64d169ed4cefa8663301a8dcaecc
DMN2230U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.23Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+12.81 грн
45+9.58 грн
100+8.51 грн
500+8.01 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
DMN2230UQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9103799AD78BF&compId=DMN2230UQ.pdf?ci_sign=3e06f057d16521d57eebbb63003e460e2d9558d7
DMN2230UQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
On-state resistance: 0.11Ω
Power dissipation: 0.6W
Drain current: 2A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.58 грн
18+24.03 грн
50+16.77 грн
100+14.29 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PDU620-13 ds30760.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; Ufmax: 940mV; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. load current: 6A
Max. forward impulse current: 150A
Leakage current: 5µA
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+34.24 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
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