Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74566) > Сторінка 1237 з 1243
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMN2058UW-7 | DIODES INCORPORATED |
![]() Description: DMN2058UW-7 |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
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AP2552W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
на замовлення 2751 шт: термін постачання 21-30 дні (днів) |
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DMP2045U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1223 шт: термін постачання 21-30 дні (днів) |
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DMP2045UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Pulsed drain current: -25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2045U-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Pulsed drain current: -25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMP2045UFY4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -25A Power dissipation: 1.49W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 6.8nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN26D0UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Kind of package: 7 inch reel; tape Drain current: 0.23A Power dissipation: 0.3W On-state resistance: 15Ω Gate-source voltage: ±10V Kind of channel: enhancement Version: ESD |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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AP4305UKTR-G1 | DIODES INCORPORATED |
![]() Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC Kind of integrated circuit: CV/CC controller Type of integrated circuit: PMIC Mounting: SMD Application: SMPS Case: SOT26 Operating temperature: -40...105°C Input voltage: -0.3...18V DC supply current: 0.5mA Operating voltage: 2.5...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP4305KTR-G1 | DIODES INCORPORATED |
![]() Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC Kind of integrated circuit: CV/CC controller Type of integrated circuit: PMIC Mounting: SMD Case: SOT26 Operating temperature: -40...105°C Input voltage: -0.3...18V Operating voltage: 2.5...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
AP43771FBZ-13 | DIODES INCORPORATED |
![]() Description: AP43771FBZ-13 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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AM4967RGSTR-G1 | DIODES INCORPORATED |
![]() Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC Operating temperature: -30...105°C Case: SSOP16 Type of integrated circuit: driver Kind of integrated circuit: motor controller Mounting: SMD Operating voltage: 5.5...16V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN601DWK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363 Case: SOT363 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 304pC Power dissipation: 0.2W Drain current: 0.3A Pulsed drain current: 0.8A On-state resistance: 3Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN601DWKQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363 Case: SOT363 Mounting: SMD Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 304pC Power dissipation: 0.2W Drain current: 0.3A Pulsed drain current: 0.8A On-state resistance: 3Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PAM2808BLBR | DIODES INCORPORATED |
![]() Description: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: SO8-EP Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...6V DC Output current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DT1042-04SOQ-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.2V; SOT23-6; Ch: 4; reel,tape Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Capacitance: 0.65pF Number of channels: 4 Max. off-state voltage: 5V Breakdown voltage: 6.2V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ZDT1053TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 75V Collector current: 5A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 20A Current gain: 300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SDT10100CT | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V Case: TO220AB Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Leakage current: 10mA Max. forward voltage: 0.76V Max. off-state voltage: 100V Load current: 5A x2 Max. forward impulse current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SDT10100P5-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape Case: PowerDI®5 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Leakage current: 18mA Max. forward voltage: 0.7V Max. off-state voltage: 100V Load current: 10A Max. forward impulse current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SDT10A100P5-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape Case: PowerDI®5 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Leakage current: 20mA Max. forward voltage: 0.68V Max. off-state voltage: 100V Load current: 10A Max. forward impulse current: 0.24kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS2376QS-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier; 5.5MHz; SO8; 2.2÷5.5VDC; reel,tape Case: SO8 Type of integrated circuit: operational amplifier Integrated circuit features: rail-to-rail Mounting: SMT Operating temperature: -40...125°C Input bias current: 0.2pA Input offset current: 0.2pA Input offset voltage: 5µV Quiescent current: 1mA Voltage supply range: 2.2...5.5V DC Slew rate: 2V/μs Bandwidth: 5.5MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MUR120-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN2710UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Kind of package: 7 inch reel; tape Drain current: 0.7A Gate charge: 0.6nC Power dissipation: 0.52W On-state resistance: 0.75Ω Gate-source voltage: ±6V Pulsed drain current: 5.6A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP21D0UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Kind of package: 7 inch reel; tape Drain current: -650mA Gate charge: 1.5nC Power dissipation: 0.33W On-state resistance: 960mΩ Gate-source voltage: ±8V Pulsed drain current: -5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN31D6UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 30V Kind of package: 7 inch reel; tape Drain current: 0.35A Gate charge: 0.35nC Power dissipation: 0.32W On-state resistance: 2Ω Gate-source voltage: ±12V Pulsed drain current: 0.8A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN62D0UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 60V Kind of package: 7 inch reel; tape Drain current: 0.26A Gate charge: 0.5nC Power dissipation: 0.34W On-state resistance: 3Ω Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP22D6UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Kind of package: 7 inch reel; tape Drain current: -310mA Power dissipation: 0.15W On-state resistance: 2.6Ω Gate-source voltage: ±8V Pulsed drain current: -0.75A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DESD5V2S2UT-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape Mounting: SMD Case: SOT23 Type of diode: TVS array Kind of package: reel; tape Capacitance: 200pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 5.2V Breakdown voltage: 6.4V Max. forward impulse current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN3010LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Polarisation: unipolar Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 90A Drain current: 11A Drain-source voltage: 30V Gate charge: 37nC On-state resistance: 10.5mΩ Power dissipation: 2.4W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN3010LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Polarisation: unipolar Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 90A Drain current: 11A Drain-source voltage: 30V Gate charge: 37nC On-state resistance: 10.5mΩ Power dissipation: 2.4W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT35M4LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Polarisation: unipolar Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 90A Drain current: 11A Drain-source voltage: 30V Gate charge: 14.9nC On-state resistance: 10.5mΩ Power dissipation: 1.7W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAV99Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAV99-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ8.5CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; bidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.82V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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74HCT164T14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 8bit,shift register,serial input,parallel out Family: HCT Technology: CMOS; TTL Type of integrated circuit: digital Case: TSSOP14 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of output: push-pull Kind of integrated circuit: 8bit; parallel out; serial input; shift register |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ43CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...54.9V Max. forward impulse current: 8.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1954 шт: термін постачання 21-30 дні (днів) |
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74LVC1G86QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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3.0SMCJ24CA-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 77.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AS431HANTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Case: SOT23 Operating temperature: -40...125°C Maximum output current: 0.1A Tolerance: ±0.5% Reference voltage: 2.495V Kind of package: reel; tape Mounting: SMD |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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AS431HMBNTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
на замовлення 1910 шт: термін постачання 21-30 дні (днів) |
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AS431BZTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431ANTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431BNTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431HMANTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431AKTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431ANTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431ARTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431AZTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431AZTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431BKTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431BNTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431BRTR-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431BRTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431BZTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA Type of integrated circuit: voltage reference source Case: TO92 Operating temperature: -40...125°C Maximum output current: 0.1A Tolerance: ±1% Reference voltage: 2.5V Kind of package: Ammo Pack Operating voltage: 2.5...36V Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431HAZTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431HBNTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431HBZTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431IANTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431IAZTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431IBNTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AS431IBRTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. |
DMN2058UW-7 |
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на замовлення 57000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.17 грн |
AP2552W6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
на замовлення 2751 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.93 грн |
18+ | 22.41 грн |
86+ | 10.93 грн |
235+ | 10.29 грн |
DMP2045U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1223 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
35+ | 11.32 грн |
50+ | 9.47 грн |
100+ | 8.72 грн |
195+ | 4.79 грн |
535+ | 4.53 грн |
DMP2045UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2045U-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2045UFY4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -25A
Power dissipation: 1.49W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -25A
Power dissipation: 1.49W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN26D0UT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.23A; 0.3W; SOT523; ESD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.23A
Power dissipation: 0.3W
On-state resistance: 15Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Version: ESD
на замовлення 150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
41+ | 9.66 грн |
53+ | 7.52 грн |
110+ | 3.62 грн |
AP4305UKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Application: SMPS
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
DC supply current: 0.5mA
Operating voltage: 2.5...18V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Application: SMPS
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
DC supply current: 0.5mA
Operating voltage: 2.5...18V DC
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AP4305KTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
Operating voltage: 2.5...18V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC
Kind of integrated circuit: CV/CC controller
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOT26
Operating temperature: -40...105°C
Input voltage: -0.3...18V
Operating voltage: 2.5...18V DC
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AP43771FBZ-13 |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 46.55 грн |
AM4967RGSTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Operating temperature: -30...105°C
Case: SSOP16
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Operating voltage: 5.5...16V DC
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SSOP16; 5.5÷16VDC
Operating temperature: -30...105°C
Case: SSOP16
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Operating voltage: 5.5...16V DC
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DMN601DWK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN601DWKQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT363
Case: SOT363
Mounting: SMD
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 304pC
Power dissipation: 0.2W
Drain current: 0.3A
Pulsed drain current: 0.8A
On-state resistance: 3Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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PAM2808BLBR |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SO8-EP
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
Output current: 1.5A
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1.5A; SO8-EP; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SO8-EP
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...6V DC
Output current: 1.5A
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DT1042-04SOQ-7 |
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.65pF
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.65pF
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
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ZDT1053TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 5A; 2.75W; SM8
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 5A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 20A
Current gain: 300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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SDT10100CT |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 10mA
Max. forward voltage: 0.76V
Max. off-state voltage: 100V
Load current: 5A x2
Max. forward impulse current: 90A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 10mA
Max. forward voltage: 0.76V
Max. off-state voltage: 100V
Load current: 5A x2
Max. forward impulse current: 90A
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SDT10100P5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 18mA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 110A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 18mA
Max. forward voltage: 0.7V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 110A
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SDT10A100P5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 20mA
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 0.24kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 20mA
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 0.24kA
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AS2376QS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; SO8; 2.2÷5.5VDC; reel,tape
Case: SO8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 0.2pA
Input offset current: 0.2pA
Input offset voltage: 5µV
Quiescent current: 1mA
Voltage supply range: 2.2...5.5V DC
Slew rate: 2V/μs
Bandwidth: 5.5MHz
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; SO8; 2.2÷5.5VDC; reel,tape
Case: SO8
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 0.2pA
Input offset current: 0.2pA
Input offset voltage: 5µV
Quiescent current: 1mA
Voltage supply range: 2.2...5.5V DC
Slew rate: 2V/μs
Bandwidth: 5.5MHz
Kind of package: reel; tape
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MUR120-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 25ns
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DMN2710UT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Drain current: 0.7A
Gate charge: 0.6nC
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Pulsed drain current: 5.6A
Kind of channel: enhancement
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DMP21D0UT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -650mA
Gate charge: 1.5nC
Power dissipation: 0.33W
On-state resistance: 960mΩ
Gate-source voltage: ±8V
Pulsed drain current: -5A
Kind of channel: enhancement
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DMN31D6UT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance: 2Ω
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Drain current: 0.35A
Gate charge: 0.35nC
Power dissipation: 0.32W
On-state resistance: 2Ω
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Kind of channel: enhancement
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DMN62D0UT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance: 3Ω
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Drain current: 0.26A
Gate charge: 0.5nC
Power dissipation: 0.34W
On-state resistance: 3Ω
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhancement
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DMP22D6UT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 150mW
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: 7 inch reel; tape
Drain current: -310mA
Power dissipation: 0.15W
On-state resistance: 2.6Ω
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Kind of channel: enhancement
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DESD5V2S2UT-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4V; 15A; SOT23; Ch: 2; reel,tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Kind of package: reel; tape
Capacitance: 200pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 5.2V
Breakdown voltage: 6.4V
Max. forward impulse current: 15A
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DMN3010LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMN3010LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMT35M4LFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Polarisation: unipolar
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 14.9nC
On-state resistance: 10.5mΩ
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Polarisation: unipolar
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 14.9nC
On-state resistance: 10.5mΩ
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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BAV99Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SMBJ8.5CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 80 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 13.47 грн |
45+ | 9.42 грн |
74HCT164T14-13 |
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Виробник: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
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SMBJ43CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1954 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.17 грн |
25+ | 15.99 грн |
29+ | 13.93 грн |
100+ | 8.87 грн |
152+ | 6.10 грн |
419+ | 5.78 грн |
74LVC1G86QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.80 грн |
3.0SMCJ24CA-13 |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AS431HANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Case: SOT23
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.495V
Kind of package: reel; tape
Mounting: SMD
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Case: SOT23
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.495V
Kind of package: reel; tape
Mounting: SMD
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
34+ | 11.72 грн |
39+ | 10.29 грн |
46+ | 8.71 грн |
100+ | 7.13 грн |
232+ | 4.04 грн |
638+ | 3.80 грн |
AS431HMBNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 1910 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.32 грн |
25+ | 15.99 грн |
29+ | 14.01 грн |
34+ | 11.72 грн |
100+ | 9.66 грн |
234+ | 3.96 грн |
644+ | 3.72 грн |
AS431BZTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HMANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ARTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-E1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Case: TO92
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±1%
Reference voltage: 2.5V
Kind of package: Ammo Pack
Operating voltage: 2.5...36V
Mounting: THT
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Case: TO92
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±1%
Reference voltage: 2.5V
Kind of package: Ammo Pack
Operating voltage: 2.5...36V
Mounting: THT
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AS431HAZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBZTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IANTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику
од. на суму грн.
AS431IAZTR-G1 |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику
од. на суму грн.
AS431IBNTR-G1 |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику
од. на суму грн.
AS431IBRTR-G1 |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
товару немає в наявності
В кошику
од. на суму грн.