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FMMT459QTA DIODES INCORPORATED FMMT459Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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D1213A-02SR-7 D1213A-02SR-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984FD3EF5C2B178BF&compId=D1213A-02SR.pdf?ci_sign=f26653fc9b86e82e84f472e6500285f2defe62ac Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; SOT143; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: automotive industry
Peak pulse power dissipation: 0.4W
Version: ESD
Max. forward impulse current: 5A
на замовлення 4099 шт:
термін постачання 21-30 дні (днів)
14+30.99 грн
18+22.38 грн
21+19.34 грн
100+11.91 грн
500+8.95 грн
1000+8.07 грн
3000+7.11 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
D1213A-01WS-7 D1213A-01WS-7 DIODES INCORPORATED D1213A-01WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.25W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3348 шт:
термін постачання 21-30 дні (днів)
39+11.19 грн
52+7.83 грн
61+6.55 грн
89+4.51 грн
103+3.89 грн
500+2.97 грн
1000+2.73 грн
1500+2.64 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
D1213A-02SOL-7 D1213A-02SOL-7 DIODES INCORPORATED D1213A_02SOL.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.3W; unidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.3W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3324 шт:
термін постачання 21-30 дні (днів)
34+12.91 грн
37+11.03 грн
40+10.15 грн
53+7.67 грн
100+6.79 грн
500+5.20 грн
1000+4.64 грн
Мінімальне замовлення: 34
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D1213A-04V-7 D1213A-04V-7 DIODES INCORPORATED D1213A-04V.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
на замовлення 1659 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
27+15.35 грн
31+13.11 грн
39+10.47 грн
100+7.75 грн
500+7.03 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
D1213A-01SO-7 D1213A-01SO-7 DIODES INCORPORATED ds32185.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
на замовлення 2770 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
39+10.39 грн
45+8.95 грн
57+7.13 грн
100+5.04 грн
500+3.60 грн
1000+3.25 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D1213A-04TS-7 D1213A-04TS-7 DIODES INCORPORATED D1213A-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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D1213A-02S-7 DIODES INCORPORATED D1213A-02S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC70; SOT353
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04SO-7 DIODES INCORPORATED ds32144.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 1.2pF
Leakage current: 1µA
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D1213A-01LP-7B DIODES INCORPORATED D1213A-01LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LP4-7B DIODES INCORPORATED D1213A-01LP4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02WL-7 DIODES INCORPORATED D1213A_02WL.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: universal
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D1213A-01W-7 DIODES INCORPORATED D1213A-01W.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SO-7 DIODES INCORPORATED Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LPQ-7B DIODES INCORPORATED D1213A-01LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01T-7 DIODES INCORPORATED D1213A-01T.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SM-7 DIODES INCORPORATED D1213A-02SM.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT25
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04MR-13 DIODES INCORPORATED D1213A-04MR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: MSOP10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01WSQ-7 DIODES INCORPORATED D1213A-01WSQ.pdf Category: Protection diodes - arrays
Description: D1213A-01WSQ-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+3.92 грн
Мінімальне замовлення: 3000
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SBR10200CTFP DIODES INCORPORATED SBR10200CT-SBR10200CTFP.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 110A; ITO220AB; 20ns
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Technology: SBR®
Mounting: THT
Reverse recovery time: 20ns
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 110A
Max. off-state voltage: 200V
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AP1538SG-13 AP1538SG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8415CA325E28&compId=AP1538x-DTE.pdf?ci_sign=c9d433d1fb71e213d1f4ca9e8682434b417d8cb5 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.6...18V DC
Output voltage: 0.8...18V DC
Output current: 3A
Case: SOP-8L-DEP
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 92%
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AS7815ADTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD09B89A001A20A00E1&compId=AS78XXA.pdf?ci_sign=c86fb671f1a352dbef8a7dec04fbc2fb13022650 Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; AS78XXA
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Case: DPAK
Mounting: SMD
Output voltage: 15V
Output current: 1A
Voltage drop: 2V
Number of channels: 1
Tolerance: ±4%
Input voltage: 17.9...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
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DMT32M5LFG-13 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LFG-7 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LPS-13 DIODES INCORPORATED DMT32M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT69M5LCG-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 208A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT69M5LFVWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
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DMT10H4M5LPS-13 DIODES INCORPORATED DMT10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.3W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMTH32M5LPSQ-13 DIODES INCORPORATED DMTH32M5LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.2mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPDWQ-13 DIODES INCORPORATED DMTH45M5LPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 7.9mΩ
Power dissipation: 3W
Drain current: 55A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPSWQ-13 DIODES INCORPORATED DMTH45M5LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 5.5mΩ
Power dissipation: 72W
Drain current: 86A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMTH10H4M5LPS-13 DIODES INCORPORATED DMTH10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.7W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMN3024LK3-13 DIODES INCORPORATED DMN3024LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.78A
Pulsed drain current: 46.5A
Power dissipation: 2.17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 12.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
9+48.20 грн
12+34.53 грн
50+27.26 грн
100+24.22 грн
250+20.38 грн
350+18.94 грн
500+17.58 грн
1000+14.71 грн
2500+13.11 грн
Мінімальне замовлення: 9
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DMT3020UFDB-7 DIODES INCORPORATED DMT3020UFDB.pdf Category: Transistors - Unclassified
Description: DMT3020UFDB-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+13.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SDT3060VCT SDT3060VCT DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Leakage current: 50mA
Kind of package: tube
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
8+61.11 грн
10+44.52 грн
50+35.89 грн
100+32.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SDT3060VCTFP SDT3060VCTFP DIODES INCORPORATED SDT3060VCT-SDT3060VCTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 163 шт:
термін постачання 21-30 дні (днів)
8+58.53 грн
10+42.28 грн
50+35.57 грн
100+32.93 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
KBJ4005G KBJ4005G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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DMP1045UFY4-7 DMP1045UFY4-7 DIODES INCORPORATED DMP1045UFY4.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Case: X2-DFN2015-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
на замовлення 2369 шт:
термін постачання 21-30 дні (днів)
13+34.43 грн
17+23.74 грн
30+19.02 грн
100+14.71 грн
500+10.47 грн
1000+9.11 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FZT1048ATA FZT1048ATA DIODES INCORPORATED FZT1048A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3W
Collector current: 5A
Quantity in set/package: 1000pcs.
Collector-emitter voltage: 17.5V
Frequency: 150MHz
Polarisation: bipolar
на замовлення 981 шт:
термін постачання 21-30 дні (днів)
6+78.33 грн
10+43.32 грн
100+28.85 грн
500+23.98 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AH1808-W-7 DIODES INCORPORATED AH1808.pdf Category: Sensors and Transducers - Unclassified
Description: AH1808-W-7
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
3000+18.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMCJ36CA-13-F SMCJ36CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ36CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DDZ30ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Zener voltage: 30V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
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DMN2024U-7 DMN2024U-7 DIODES INCORPORATED DMN2024U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2024UFDF-13 DIODES INCORPORATED DMN2024UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 1.67W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2024UFDF-7 DIODES INCORPORATED DMN2024UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 0.96W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2024UFU-7 DIODES INCORPORATED DMN2024UFU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 50A
Power dissipation: 1.71W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AL1697-20CS7-13 DIODES INCORPORATED AL1697.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Operating voltage: 7...25V DC
Operating temperature: -40...105°C
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Topology: single transistor
Number of channels: 1
Output current: 2A
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BZX84C6V2-7-F BZX84C6V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3417 шт:
термін постачання 21-30 дні (днів)
72+6.03 грн
87+4.64 грн
100+4.00 грн
187+2.14 грн
250+1.68 грн
500+1.42 грн
1000+1.23 грн
1500+1.14 грн
3000+1.09 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BZX84C6V2S-7-F BZX84C6V2S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C6V2W-7-F BZX84C6V2W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BZX84C6V2Q-7-F BZX84C6V2Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C6V2TS-7-F BZX84C6V2TS-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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BZX84C9V1S-7-F DIODES INCORPORATED ds30108.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C9V1Q-13-F BZX84C9V1Q-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C9V1T-7-F BZX84C9V1T-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED55B8547B42A18&compId=BZX84CxxT_SER.pdf?ci_sign=651b14972163ebab9dde6b57178e9cc7352e90e9 Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C9V1W-7-F DIODES INCORPORATED ds30066.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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DMP58D0SV-7 DMP58D0SV-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1D246B3E3B8BF&compId=DMP58D0SV.pdf?ci_sign=a239c20ec3fdfa946006f89a1880fb65a4eb369c Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -160mA
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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D3V3F4U10LP-7
+1
 		D3V3F4U10LP-7 DIODES INCORPORATED D3V3F4U10LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Case: DFN2510-10
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.5pF
Kind of package: reel; tape
Number of channels: 4
Breakdown voltage: 5.5V
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D3V3F8U9LP3810-7 DIODES INCORPORATED D3V3F8U9LP3810.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Case: uDFN9
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: universal
Capacitance: 0.55pF
Kind of package: reel; tape
Number of channels: 8
Breakdown voltage: 5.5V
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FMMT459QTA FMMT459Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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D1213A-02SR-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE984FD3EF5C2B178BF&compId=D1213A-02SR.pdf?ci_sign=f26653fc9b86e82e84f472e6500285f2defe62ac
D1213A-02SR-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; SOT143; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: automotive industry
Peak pulse power dissipation: 0.4W
Version: ESD
Max. forward impulse current: 5A
на замовлення 4099 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.99 грн
18+22.38 грн
21+19.34 грн
100+11.91 грн
500+8.95 грн
1000+8.07 грн
3000+7.11 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
D1213A-01WS-7 D1213A-01WS.pdf
D1213A-01WS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.25W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.19 грн
52+7.83 грн
61+6.55 грн
89+4.51 грн
103+3.89 грн
500+2.97 грн
1000+2.73 грн
1500+2.64 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
D1213A-02SOL-7 D1213A_02SOL.pdf
D1213A-02SOL-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.3W; unidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.3W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3324 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.91 грн
37+11.03 грн
40+10.15 грн
53+7.67 грн
100+6.79 грн
500+5.20 грн
1000+4.64 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
D1213A-04V-7 D1213A-04V.pdf
D1213A-04V-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
на замовлення 1659 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
27+15.35 грн
31+13.11 грн
39+10.47 грн
100+7.75 грн
500+7.03 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
D1213A-01SO-7 ds32185.pdf
D1213A-01SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
на замовлення 2770 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
39+10.39 грн
45+8.95 грн
57+7.13 грн
100+5.04 грн
500+3.60 грн
1000+3.25 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D1213A-04TS-7 D1213A-04TS.pdf
D1213A-04TS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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D1213A-02S-7 D1213A-02S.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC70; SOT353
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04SO-7 ds32144.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 1.2pF
Leakage current: 1µA
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D1213A-01LP-7B D1213A-01LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LP4-7B D1213A-01LP4.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02WL-7 D1213A_02WL.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: universal
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D1213A-01W-7 D1213A-01W.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LPQ-7B D1213A-01LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01T-7 D1213A-01T.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SM-7 D1213A-02SM.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT25
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04MR-13 D1213A-04MR.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: MSOP10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01WSQ-7 D1213A-01WSQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: D1213A-01WSQ-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR10200CTFP SBR10200CT-SBR10200CTFP.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 110A; ITO220AB; 20ns
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Technology: SBR®
Mounting: THT
Reverse recovery time: 20ns
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 110A
Max. off-state voltage: 200V
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AP1538SG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8415CA325E28&compId=AP1538x-DTE.pdf?ci_sign=c9d433d1fb71e213d1f4ca9e8682434b417d8cb5
AP1538SG-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.6...18V DC
Output voltage: 0.8...18V DC
Output current: 3A
Case: SOP-8L-DEP
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 92%
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AS7815ADTR-G1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD09B89A001A20A00E1&compId=AS78XXA.pdf?ci_sign=c86fb671f1a352dbef8a7dec04fbc2fb13022650
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; AS78XXA
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Case: DPAK
Mounting: SMD
Output voltage: 15V
Output current: 1A
Voltage drop: 2V
Number of channels: 1
Tolerance: ±4%
Input voltage: 17.9...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
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DMT32M5LFG-13 DMT32M5LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LFG-7 DMT32M5LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LPS-13 DMT32M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT69M5LCG-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 208A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT69M5LFVWQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
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DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.3W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.2mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPDWQ-13 DMTH45M5LPDWQ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 7.9mΩ
Power dissipation: 3W
Drain current: 55A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI5060-8
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DMTH45M5LPSWQ-13 DMTH45M5LPSWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 5.5mΩ
Power dissipation: 72W
Drain current: 86A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMTH10H4M5LPS-13 DMTH10H4M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.7W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMN3024LK3-13 DMN3024LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.78A
Pulsed drain current: 46.5A
Power dissipation: 2.17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 12.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.20 грн
12+34.53 грн
50+27.26 грн
100+24.22 грн
250+20.38 грн
350+18.94 грн
500+17.58 грн
1000+14.71 грн
2500+13.11 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DMT3020UFDB-7 DMT3020UFDB.pdf
Виробник: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: DMT3020UFDB-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+13.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SDT3060VCT SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Leakage current: 50mA
Kind of package: tube
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+61.11 грн
10+44.52 грн
50+35.89 грн
100+32.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SDT3060VCTFP SDT3060VCT-SDT3060VCTFP.pdf
SDT3060VCTFP
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.6V
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 163 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.53 грн
10+42.28 грн
50+35.57 грн
100+32.93 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
KBJ4005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8D508005A73D7&compId=KBJ4005G_ser.pdf?ci_sign=eed0167dc40b4f545807d3dae8e9d5ddcfac94aa
KBJ4005G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 120A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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DMP1045UFY4-7 DMP1045UFY4.pdf
DMP1045UFY4-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Case: X2-DFN2015-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
на замовлення 2369 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.43 грн
17+23.74 грн
30+19.02 грн
100+14.71 грн
500+10.47 грн
1000+9.11 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FZT1048ATA FZT1048A.pdf
FZT1048ATA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3W
Collector current: 5A
Quantity in set/package: 1000pcs.
Collector-emitter voltage: 17.5V
Frequency: 150MHz
Polarisation: bipolar
на замовлення 981 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+78.33 грн
10+43.32 грн
100+28.85 грн
500+23.98 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AH1808-W-7 AH1808.pdf
Виробник: DIODES INCORPORATED
Category: Sensors and Transducers - Unclassified
Description: AH1808-W-7
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+18.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMCJ36CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ36CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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DDZ30ASF-7 ds31987.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323F; single diode
Power dissipation: 0.5W
Zener voltage: 30V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
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DMN2024U-7 DMN2024U.pdf
DMN2024U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2024UFDF-13 DMN2024UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 1.67W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2024UFDF-7 DMN2024UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 0.96W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2024UFU-7 DMN2024UFU.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 50A
Power dissipation: 1.71W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 14.8nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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AL1697-20CS7-13 AL1697.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Operating voltage: 7...25V DC
Operating temperature: -40...105°C
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Topology: single transistor
Number of channels: 1
Output current: 2A
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BZX84C6V2-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C6V2-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3417 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.03 грн
87+4.64 грн
100+4.00 грн
187+2.14 грн
250+1.68 грн
500+1.42 грн
1000+1.23 грн
1500+1.14 грн
3000+1.09 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BZX84C6V2S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4
BZX84C6V2S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C6V2W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C6V2W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BZX84C6V2Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C6V2Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C6V2TS-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED562773D52CA18&compId=BZX84CxxTS_SER.pdf?ci_sign=279795985b7b261799a4d5784b0bc07db2820585
BZX84C6V2TS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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BZX84C9V1S-7-F ds30108.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C9V1Q-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C9V1Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C9V1T-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED55B8547B42A18&compId=BZX84CxxT_SER.pdf?ci_sign=651b14972163ebab9dde6b57178e9cc7352e90e9
BZX84C9V1T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 9.1V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C9V1W-7-F ds30066.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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DMP58D0SV-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1D246B3E3B8BF&compId=DMP58D0SV.pdf?ci_sign=a239c20ec3fdfa946006f89a1880fb65a4eb369c
DMP58D0SV-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -160mA
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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D3V3F4U10LP-7 D3V3F4U10LP.pdf
D3V3F4U10LP-7
+1
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Case: DFN2510-10
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: automotive industry
Capacitance: 0.5pF
Kind of package: reel; tape
Number of channels: 4
Breakdown voltage: 5.5V
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D3V3F8U9LP3810-7 D3V3F8U9LP3810.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Case: uDFN9
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 1µA
Application: universal
Capacitance: 0.55pF
Kind of package: reel; tape
Number of channels: 8
Breakdown voltage: 5.5V
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