Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74567) > Сторінка 1234 з 1243
Фото | Назва | Виробник | Інформація |
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DMTH8003SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 85A; Idm: 480A; 2.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 85A Pulsed drain current: 480A Power dissipation: 2.9W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 124.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMTH8004LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 400A Power dissipation: 2.9W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 81nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMTH8008LFGQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 280A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 37.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMTH8008LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 64A Pulsed drain current: 360A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 41.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMTH8008LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 64A Pulsed drain current: 360A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 41.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMTH8008SPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 65A Pulsed drain current: 360A Power dissipation: 3.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMTH8008LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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DMTH8008SFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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DMTH8008SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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AP2205-W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷24V; 0.25A Type of integrated circuit: voltage regulator Output current: 0.25A Number of channels: 1 Mounting: SMD Case: SOT23-5 Kind of package: reel; tape Kind of voltage regulator: adjustable; LDO; linear Input voltage: 2.3...24V Manufacturer series: AP2205 Application: automotive industry Integrated circuit features: shutdown mode control input Operating temperature: -40...125°C Voltage drop: 0.5V Tolerance: ±2% Output voltage: 3.3...24V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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AP2205-33W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; SOT23-5; SMD Type of integrated circuit: voltage regulator Output current: 0.25A Number of channels: 1 Mounting: SMD Case: SOT23-5 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Input voltage: 2.3...24V Manufacturer series: AP2205 Application: automotive industry Integrated circuit features: shutdown mode control input Operating temperature: -40...125°C Voltage drop: 0.5V Tolerance: ±2% Output voltage: 3.3V |
на замовлення 2415 шт: термін постачання 21-30 дні (днів) |
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AP22811BW5-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Mounting: SMD Active logical level: low Type of integrated circuit: power switch Kind of package: reel; tape Case: SOT25 On-state resistance: 50mΩ Number of channels: 1 Output current: 2A Kind of integrated circuit: high-side; USB switch Supply voltage: 2.7...5.5V DC Kind of output: P-Channel |
на замовлення 1877 шт: термін постачання 21-30 дні (днів) |
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AP22652AW6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC On-state resistance: 65mΩ Active logical level: low |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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AP22811AW5-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Mounting: SMD Active logical level: high Type of integrated circuit: power switch Kind of package: reel; tape Case: SOT25 On-state resistance: 50mΩ Number of channels: 1 Output current: 2A Kind of integrated circuit: high-side; USB switch Supply voltage: 2.7...5.5V DC Kind of output: P-Channel |
на замовлення 2983 шт: термін постачання 21-30 дні (днів) |
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AP22815AWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Mounting: SMD Active logical level: high Type of integrated circuit: power switch Kind of package: reel; tape Case: TSOT25 On-state resistance: 40mΩ Number of channels: 1 Output current: 3A Kind of integrated circuit: high-side; USB switch Supply voltage: 2.7...5.5V DC Kind of output: P-Channel |
на замовлення 2670 шт: термін постачання 21-30 дні (днів) |
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AP22814AW5-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: SOT25 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of package: reel; tape On-state resistance: 50mΩ Output current: 3A Supply voltage: 2.7...5.5V DC |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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AP22913W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SMBJ150A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 875 шт: термін постачання 21-30 дні (днів) |
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DMNH45M7SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 155A Pulsed drain current: 200A Power dissipation: 96W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: THT Gate charge: 36.1nC Kind of package: tube Kind of channel: enhancement |
на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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DMT6018LDR-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Mounting: SMD Case: V-DFN3030-8 Power dissipation: 1.2W Drain current: 9.1A Gate-source voltage: ±20V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13.9nC On-state resistance: 26mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6018LDR-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Mounting: SMD Case: V-DFN3030-8 Power dissipation: 1.2W Drain current: 9.1A Gate-source voltage: ±20V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13.9nC On-state resistance: 26mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ZTX1149A | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 25V; 3A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 3A Power dissipation: 1W Case: TO92 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 135MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAT54W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Leakage current: 2µA Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54W-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Leakage current: 2µA Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54WQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry Capacitance: 10pF Reverse recovery time: 5ns Leakage current: 2µA Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SDMP0340LST-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT523; SMD; 40V; 30mA; reel,tape; 150mW Type of diode: Schottky switching Case: SOT523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: double series Capacitance: 2pF Max. forward voltage: 0.37V Leakage current: 1µA Max. forward impulse current: 0.2A Kind of package: reel; tape Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
2DB1713-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 3A; 2W; SOT89 Mounting: SMD Power dissipation: 2W Collector current: 3A Kind of package: reel; tape Pulsed collector current: 6A Collector-emitter voltage: 12V Type of transistor: PNP Current gain: 270...680 Quantity in set/package: 2500pcs. Polarisation: bipolar Frequency: 180MHz Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BC846BWQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Application: automotive industry Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
P6SMAJ60ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
P6SMAJ20ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
P6SMAJ54ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
P6SMAJ64ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
P6SMAJ70ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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P6SMAJ75ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 7130 шт: термін постачання 21-30 дні (днів) |
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P6SMAJ75ADFQ-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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P6SMAJ85ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DMTH6016LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.2A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
B530CQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 100A Semiconductor structure: single diode Case: SMC Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Capacitance: 300pF Application: automotive industry Reverse recovery time: 16ns Load current: 5A Max. forward voltage: 0.55V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLV271CW5-7 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2MHz Open-loop gain: 110dB Mounting: SMT Number of channels: 1 Case: SOT25 Operating temperature: 0...70°C Input offset voltage: 5mV Power dissipation: 0.22W Slew rate: 2V/μs Operating voltage: 2.7...16V Kind of package: reel; tape |
на замовлення 1636 шт: термін постачання 21-30 дні (днів) |
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TLV271IW5-7 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2MHz Open-loop gain: 110dB Mounting: SMT Number of channels: 1 Case: SOT25 Operating temperature: -40...125°C Input offset voltage: 5mV Power dissipation: 0.22W Slew rate: 2V/μs Operating voltage: 2.7...16V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ40A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2170 шт: термін постачання 21-30 дні (днів) |
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SMAJ40AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C2V4-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8.5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 3460 шт: термін постачання 21-30 дні (днів) |
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BZX84C2V4Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C2V4S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.4V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C2V4TS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8.5% Kind of package: reel; tape Case: SOT363 Semiconductor structure: triple independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C2V4T-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.15W; 2.4V; SMD; reel,tape; SOT523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8.5% Kind of package: reel; tape Case: SOT523 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C2V4W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
BZX84C2V4Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener Type of diode: Zener |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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S1D-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF |
на замовлення 1632 шт: термін постачання 21-30 дні (днів) |
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RS1D-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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S1A-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Mounting: SMD Capacitance: 10pF Reverse recovery time: 1.8µs Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Type of diode: rectifying |
на замовлення 5012 шт: термін постачання 21-30 дні (днів) |
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S3A-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A Mounting: SMD Load current: 3A Max. forward voltage: 1.15V Max. forward impulse current: 100A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMC Semiconductor structure: single diode Type of diode: rectifying |
на замовлення 2685 шт: термін постачання 21-30 дні (днів) |
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AP7343D-15FS4-7B | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; X2DFN4; SMD Manufacturer series: AP7343 Output current: 0.3A Mounting: SMD Operating temperature: -40...85°C Case: X2DFN4 Type of integrated circuit: voltage regulator Voltage drop: 0.39V Number of channels: 1 Tolerance: ±1% Kind of package: reel; tape Output voltage: 1.5V Input voltage: 1.7...5.25V Integrated circuit features: output discharge; shutdown mode control input Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMAJ48A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3504 шт: термін постачання 21-30 дні (днів) |
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SMAJ48AQ-13-F | DIODES INCORPORATED |
![]() Description: SMAJ48AQ-13-F |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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SMAJ43CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 5.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 610 шт: термін постачання 21-30 дні (днів) |
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AP8803WTG-7 | DIODES INCORPORATED |
![]() Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED driver Case: TSOT25 Output current: 1A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 8...30V DC Integrated circuit features: linear dimming; PWM |
на замовлення 1197 шт: термін постачання 21-30 дні (днів) |
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MMBZ5248BQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MMBZ5248BS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. |
DMTH8003SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 85A; Idm: 480A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 85A
Pulsed drain current: 480A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 124.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 85A; Idm: 480A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 85A
Pulsed drain current: 480A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 124.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMTH8004LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.9W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMTH8008LFGQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 280A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 280A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
DMTH8008LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMTH8008LPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
DMTH8008SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Pulsed drain current: 360A
Power dissipation: 3.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Pulsed drain current: 360A
Power dissipation: 3.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
DMTH8008LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
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2000+ | 50.30 грн |
DMTH8008SFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 57.13 грн |
DMTH8008SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 36.32 грн |
AP2205-W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷24V; 0.25A
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3...24V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷24V; 0.25A
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3...24V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.20 грн |
33+ | 12.35 грн |
37+ | 10.77 грн |
44+ | 9.18 грн |
100+ | 7.60 грн |
147+ | 6.33 грн |
404+ | 5.94 грн |
AP2205-33W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.3...24V
Manufacturer series: AP2205
Application: automotive industry
Integrated circuit features: shutdown mode control input
Operating temperature: -40...125°C
Voltage drop: 0.5V
Tolerance: ±2%
Output voltage: 3.3V
на замовлення 2415 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.43 грн |
20+ | 19.79 грн |
23+ | 17.58 грн |
27+ | 15.04 грн |
50+ | 13.54 грн |
100+ | 12.43 грн |
119+ | 7.84 грн |
326+ | 7.36 грн |
AP22811BW5-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: low
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
на замовлення 1877 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
21+ | 19.16 грн |
24+ | 17.02 грн |
27+ | 14.73 грн |
87+ | 10.69 грн |
239+ | 10.13 грн |
1000+ | 9.82 грн |
AP22652AW6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 65mΩ
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 65mΩ
Active logical level: low
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
24+ | 16.55 грн |
29+ | 14.09 грн |
50+ | 12.67 грн |
81+ | 11.56 грн |
100+ | 11.48 грн |
222+ | 10.93 грн |
AP22811AW5-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SOT25
On-state resistance: 50mΩ
Number of channels: 1
Output current: 2A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
на замовлення 2983 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
21+ | 19.00 грн |
24+ | 16.86 грн |
28+ | 14.49 грн |
91+ | 10.29 грн |
249+ | 9.74 грн |
1000+ | 9.50 грн |
AP22815AWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
On-state resistance: 40mΩ
Number of channels: 1
Output current: 3A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Mounting: SMD
Active logical level: high
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: TSOT25
On-state resistance: 40mΩ
Number of channels: 1
Output current: 3A
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
на замовлення 2670 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.45 грн |
11+ | 38.00 грн |
12+ | 34.04 грн |
25+ | 29.45 грн |
84+ | 28.90 грн |
100+ | 27.95 грн |
AP22814AW5-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: SOT25
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 3A
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: SOT25
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 3A
Supply voltage: 2.7...5.5V DC
на замовлення 112 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.43 грн |
20+ | 20.43 грн |
22+ | 18.13 грн |
26+ | 15.52 грн |
84+ | 11.24 грн |
AP22913W6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
21+ | 19.63 грн |
23+ | 17.42 грн |
27+ | 14.88 грн |
91+ | 10.29 грн |
249+ | 9.74 грн |
SMBJ150A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
29+ | 13.93 грн |
34+ | 11.88 грн |
43+ | 9.42 грн |
100+ | 6.81 грн |
156+ | 6.02 грн |
428+ | 5.62 грн |
500+ | 5.46 грн |
DMNH45M7SCT |
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 153.47 грн |
14+ | 68.09 грн |
38+ | 64.13 грн |
DMT6018LDR-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
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DMT6018LDR-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Mounting: SMD
Case: V-DFN3030-8
Power dissipation: 1.2W
Drain current: 9.1A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13.9nC
On-state resistance: 26mΩ
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ZTX1149A |
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Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 135MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 135MHz
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BAT54W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54W-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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BAT54WQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.2W
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SDMP0340LST-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 30mA; reel,tape; 150mW
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 30mA; reel,tape; 150mW
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.15W
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2DB1713-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 3A; 2W; SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 3A
Kind of package: reel; tape
Pulsed collector current: 6A
Collector-emitter voltage: 12V
Type of transistor: PNP
Current gain: 270...680
Quantity in set/package: 2500pcs.
Polarisation: bipolar
Frequency: 180MHz
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 3A; 2W; SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 3A
Kind of package: reel; tape
Pulsed collector current: 6A
Collector-emitter voltage: 12V
Type of transistor: PNP
Current gain: 270...680
Quantity in set/package: 2500pcs.
Polarisation: bipolar
Frequency: 180MHz
Case: SOT89
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BC846BWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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P6SMAJ60ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ20ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ54ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ64ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMAJ70ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 9.98 грн |
P6SMAJ75ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 7130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7130+ | 9.98 грн |
P6SMAJ75ADFQ-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 11.17 грн |
P6SMAJ85ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 9.98 грн |
DMTH6016LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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B530CQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 300pF
Application: automotive industry
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Capacitance: 300pF
Application: automotive industry
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
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TLV271CW5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: 0...70°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: 0...70°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
на замовлення 1636 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
26+ | 15.52 грн |
29+ | 13.93 грн |
33+ | 12.11 грн |
100+ | 9.98 грн |
101+ | 9.26 грн |
250+ | 9.03 грн |
277+ | 8.79 грн |
500+ | 8.71 грн |
TLV271IW5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: -40...125°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Open-loop gain: 110dB
Mounting: SMT
Number of channels: 1
Case: SOT25
Operating temperature: -40...125°C
Input offset voltage: 5mV
Power dissipation: 0.22W
Slew rate: 2V/μs
Operating voltage: 2.7...16V
Kind of package: reel; tape
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SMAJ40A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2170 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.05 грн |
31+ | 12.98 грн |
36+ | 11.16 грн |
100+ | 6.49 грн |
210+ | 4.43 грн |
576+ | 4.20 грн |
SMAJ40AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BZX84C2V4-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3460 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
80+ | 4.99 грн |
166+ | 2.39 грн |
500+ | 1.69 грн |
797+ | 1.16 грн |
2189+ | 1.10 грн |
BZX84C2V4Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C2V4S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C2V4TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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BZX84C2V4T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.4V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.4V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C2V4W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BZX84C2V4Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.51 грн |
S1D-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 1632 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
52+ | 7.76 грн |
58+ | 6.89 грн |
100+ | 4.70 грн |
439+ | 2.12 грн |
1205+ | 2.00 грн |
RS1D-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
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S1A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 1.8µs
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 1.8µs
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 5012 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.53 грн |
61+ | 6.57 грн |
100+ | 4.06 грн |
500+ | 2.97 грн |
531+ | 1.75 грн |
1458+ | 1.65 грн |
S3A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Load current: 3A
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Load current: 3A
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 2685 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.05 грн |
28+ | 14.57 грн |
29+ | 14.09 грн |
90+ | 10.37 грн |
247+ | 9.82 грн |
AP7343D-15FS4-7B |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; X2DFN4; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.39V
Number of channels: 1
Tolerance: ±1%
Kind of package: reel; tape
Output voltage: 1.5V
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; X2DFN4; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.39V
Number of channels: 1
Tolerance: ±1%
Kind of package: reel; tape
Output voltage: 1.5V
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
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од. на суму грн.
SMAJ48A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3504 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.90 грн |
30+ | 13.46 грн |
34+ | 11.88 грн |
39+ | 10.33 грн |
100+ | 7.46 грн |
220+ | 4.24 грн |
603+ | 4.01 грн |
SMAJ48AQ-13-F |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 7.59 грн |
SMAJ43CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 610 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.17 грн |
25+ | 16.47 грн |
29+ | 14.01 грн |
100+ | 7.76 грн |
204+ | 4.59 грн |
558+ | 4.35 грн |
AP8803WTG-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; buck; LED driver; TSOT25; 1A; Ch: 1; PWM,linear dimming
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: TSOT25
Output current: 1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8...30V DC
Integrated circuit features: linear dimming; PWM
на замовлення 1197 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 95.49 грн |
10+ | 64.92 грн |
16+ | 58.59 грн |
44+ | 55.42 грн |
100+ | 53.84 грн |
MMBZ5248BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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MMBZ5248BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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од. на суму грн.