Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74460) > Сторінка 1234 з 1241
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| 74LVC1G58FW4-7 | DIODES INCORPORATED |
 Category: Gates, invertersDescription: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6 Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of inputs: 3 Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC Technology: CMOS Kind of integrated circuit: buffer; inverter Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1G58FZ4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6 Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of inputs: 3 Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC Technology: CMOS Kind of integrated circuit: buffer; inverter Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1G58W6-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR Number of inputs: 3 Mounting: SMD Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC Technology: CMOS Kind of integrated circuit: buffer; inverter Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ZXMC4559DN8TA | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Drain current: 3.6/-2.6A Kind of channel: enhancement Drain-source voltage: 60/-60V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 75mΩ |
на замовлення 134 шт: термін постачання 14-30 дні (днів) |
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ZXMC4559DN8TC | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Mounting: SMD Power dissipation: 2.2W Polarisation: unipolar Drain current: 3.9/-4.7A Kind of channel: enhancement Drain-source voltage: 60/-60V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 0.055/0.85Ω |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBF170Q-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 0.8A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5.3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1554 шт: термін постачання 14-30 дні (днів) |
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MMBF170-13-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 On-state resistance: 5Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBF170Q-13-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5.3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBRB20150CT | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Leakage current: 10mA Max. forward impulse current: 170A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBRB20150CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Leakage current: 10mA Max. forward impulse current: 170A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMN2040U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.8A; Idm: 30A; 1.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.8A Pulsed drain current: 30A Power dissipation: 1.36W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMCJ60A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 66.7÷73.7V; 15.5A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 15.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZXTN25100DFHTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2.5A Power dissipation: 1.81W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 175MHz Current gain: 20...900 Manufacturer standard package: 3000pcs. |
на замовлення 2264 шт: термін постачання 14-30 дні (днів) |
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ZXTN19100CFFTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4.5A Power dissipation: 0.84W Case: SOT23F Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Current gain: 200...500 Manufacturer standard package: 3000pcs. |
на замовлення 1519 шт: термін постачання 14-30 дні (днів) |
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ZXTN2011ZTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4.5A; 2.1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4.5A Power dissipation: 2.1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Current gain: 10...300 Manufacturer standard package: 1000pcs. |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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DDZ3V6BSF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DDZ3V6ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| GDZ3V6LP3-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 3.6V; SMD; X3-DFN0603-2; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: X3-DFN0603-2 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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D3Z3V6BF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 3.6V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.4W Zener voltage: 3.6V Mounting: SMD Tolerance: ±4% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| AS358MMTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: MSOP8 Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 100nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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AS358MTR-E1 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 100nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBZ5231BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 5.1V; SMD; SOT363; double independent Mounting: SMD Tolerance: ±5% Power dissipation: 0.2W Kind of package: reel; tape Semiconductor structure: double independent Case: SOT363 Zener voltage: 5.1V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBZ5231B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 5.1V; SMD; SOT23; single diode; reel,tape Mounting: SMD Tolerance: ±5% Power dissipation: 0.35W Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Zener voltage: 5.1V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBZ5231BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 5.1V; SMD; SOT23; single diode; reel,tape Mounting: SMD Tolerance: ±5% Power dissipation: 0.35W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Zener voltage: 5.1V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBZ5231BTS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 5.1V; SMD; SOT363; triple independent Mounting: SMD Tolerance: ±5% Power dissipation: 0.2W Kind of package: reel; tape Semiconductor structure: triple independent Case: SOT363 Zener voltage: 5.1V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LVC32AT14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LMV324BG-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; Uoper: 2.7÷5.5V; SO14; 10dB Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 4 Operating voltage: 2.7...5.5V Mounting: SMT Case: SO14 Operating temperature: -40...125°C Slew rate: 1V/μs Open-loop gain: 10dB Integrated circuit features: rail-to-rail output Input offset voltage: 7mV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AHCT08T14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PD3S140Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 22A Semiconductor structure: single diode Case: PowerDI®323 Mounting: SMD Leakage current: 50µA Capacitance: 32pF Kind of package: reel; tape Max. forward voltage: 0.55V Application: automotive industry Load current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DESD3512SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 36V; 11A; bidirectional; SOT23; Ch: 2; reel,tape Type of diode: TVS array Max. off-state voltage: 35V Breakdown voltage: 36V Max. forward impulse current: 11A Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 0.5µA Capacitance: 32pF Kind of package: reel; tape Number of channels: 2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMP4065SQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.7A Pulsed drain current: -20A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMP4047SSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.2A Pulsed drain current: -26A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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AZ23C51-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 51V; SMD; SOT23; double,common anode; reel,tape Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Semiconductor structure: common anode; double Zener voltage: 51V Type of diode: Zener Tolerance: ±5% |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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AZ23C5V6W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 5.6V; SMD; SOT323; double,common anode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT323 Semiconductor structure: common anode; double Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT3906-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 300mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MMBT3906T-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT523 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Manufacturer standard package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT3906LP-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBT3906-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Manufacturer standard package: 10000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MMBT3906FA-7B | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 435mW Case: X2-DFN0806-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 10000pcs. Pulsed collector current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT3906FZ-7B | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 925mW Case: X2-DFN0606-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 10000pcs. Pulsed collector current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT3906LP-7B | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 10000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBT3906Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT620TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 0.625W Case: SOT23 Current gain: 10...900 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT620QTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 0.806W Case: SOT23 Current gain: 10...900 Mounting: SMD Kind of package: reel; tape Frequency: 100...160MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 5A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZVN4306AV | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.1A Pulsed drain current: 15A Power dissipation: 0.85W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZVN4306ASTZ | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.1A Pulsed drain current: 15A Power dissipation: 0.85W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
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ZVN4206AV | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.6A Pulsed drain current: 8A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP2303MTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8 Operating voltage: 1.2...5.5/3...5.5V DC Mounting: SMD Output current: 1.75A Type of integrated circuit: PMIC Operating temperature: -40...85°C Application: for DDR memories Output voltage: 0.6...3.3V Kind of package: reel; tape Case: SO8 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| AP2303MPTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8 Operating voltage: 1.2...5.5/3...5.5V DC Mounting: SMD Output current: 1.75A Type of integrated circuit: PMIC Operating temperature: -40...85°C Application: for DDR memories Output voltage: 0.6...3.3V Kind of package: reel; tape Case: PSOP8 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| AP7383-36FDC-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.05A; uDFN6; SMD Manufacturer series: AP7383 Output current: 50mA Type of integrated circuit: voltage regulator Voltage drop: 1.5V Operating temperature: -40...125°C Output voltage: 3.6V Kind of package: reel; tape Case: uDFN6 Number of channels: 1 Tolerance: ±1% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 3.5...30V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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AP2171WG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT25 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 95mΩ Active logical level: high |
на замовлення 2996 шт: термін постачання 14-30 дні (днів) |
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S1N-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A Max. off-state voltage: 1.2kV Load current: 1A Max. forward impulse current: 30A Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape Semiconductor structure: single diode Capacitance: 6pF Type of diode: rectifying Mounting: SMD |
на замовлення 431 шт: термін постачання 14-30 дні (днів) |
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SMAJ60CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ60CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
| DDTA114YE-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Current gain: 68 |
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В кошику од. на суму грн. | |||||||||||||||||||
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DMN67D8L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; 0.34W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Pulsed drain current: 0.8A Power dissipation: 0.34W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMN67D8LW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180mA; Idm: 0.8A; 470mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.18A Pulsed drain current: 0.8A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 821pC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DMN67D8LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180mA; Idm: 0.8A; 470mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.18A Pulsed drain current: 0.8A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±30V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 821pC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMN67D8L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 170mA; Idm: 0.8A; 570mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Pulsed drain current: 0.8A Power dissipation: 570mW Case: SOT23 Gate-source voltage: ±30V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 821pC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DMN67D8LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 180mA; Idm: 0.8A; 410mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.18A Pulsed drain current: 0.8A Power dissipation: 0.41W Case: SOT363 Gate-source voltage: ±30V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 821pC |
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В кошику од. на суму грн. |
| 74LVC1G58FW4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Number of channels: 1
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В кошику
од. на суму грн.
| 74LVC1G58FZ4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Number of channels: 1
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В кошику
од. на суму грн.
| 74LVC1G58W6-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of inputs: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Number of channels: 1
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В кошику
од. на суму грн.
| ZXMC4559DN8TA |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 3.6/-2.6A
Kind of channel: enhancement
Drain-source voltage: 60/-60V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 75mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 3.6/-2.6A
Kind of channel: enhancement
Drain-source voltage: 60/-60V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 75mΩ
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.09 грн |
| 10+ | 73.12 грн |
| 25+ | 67.26 грн |
| 33+ | 29.13 грн |
| 90+ | 27.56 грн |
| ZXMC4559DN8TC |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
Drain current: 3.9/-4.7A
Kind of channel: enhancement
Drain-source voltage: 60/-60V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 0.055/0.85Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
Drain current: 3.9/-4.7A
Kind of channel: enhancement
Drain-source voltage: 60/-60V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 0.055/0.85Ω
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| MMBF170Q-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1554 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.77 грн |
| 28+ | 15.10 грн |
| 34+ | 12.28 грн |
| 100+ | 8.63 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.48 грн |
| MMBF170-13-F |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 5Ω
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MMBF170Q-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Application: automotive industry
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| MBRB20150CT |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: tube
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В кошику
од. на суму грн.
| MBRB20150CT-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
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В кошику
од. на суму грн.
| DMN2040U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.8A; Idm: 30A; 1.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 30A
Power dissipation: 1.36W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.8A; Idm: 30A; 1.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 30A
Power dissipation: 1.36W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SMCJ60A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 66.7÷73.7V; 15.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 15.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 66.7÷73.7V; 15.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 15.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| ZXTN25100DFHTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Current gain: 20...900
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2.5A; 1.81W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2.5A
Power dissipation: 1.81W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Current gain: 20...900
Manufacturer standard package: 3000pcs.
на замовлення 2264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.88 грн |
| 10+ | 46.55 грн |
| 25+ | 37.55 грн |
| 50+ | 32.19 грн |
| 100+ | 28.14 грн |
| 250+ | 24.43 грн |
| 500+ | 22.53 грн |
| 1000+ | 21.13 грн |
| 1500+ | 20.55 грн |
| ZXTN19100CFFTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...500
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 840mW; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 0.84W
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...500
Manufacturer standard package: 3000pcs.
на замовлення 1519 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.99 грн |
| 7+ | 67.34 грн |
| 10+ | 55.95 грн |
| 25+ | 43.00 грн |
| 50+ | 35.98 грн |
| 100+ | 31.03 грн |
| 200+ | 27.65 грн |
| 500+ | 24.92 грн |
| 1000+ | 23.69 грн |
| ZXTN2011ZTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 2.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 2.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 10...300
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4.5A; 2.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4.5A
Power dissipation: 2.1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 10...300
Manufacturer standard package: 1000pcs.
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.88 грн |
| 10+ | 44.48 грн |
| DDZ3V6BSF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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| DDZ3V6ASF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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| GDZ3V6LP3-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X3-DFN0603-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: X3-DFN0603-2
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X3-DFN0603-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: X3-DFN0603-2
Semiconductor structure: single diode
Kind of package: reel; tape
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| D3Z3V6BF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 3.6V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 3.6V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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| AS358MMTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; MSOP8; 7mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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| AS358MTR-E1 |
|
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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| MMBZ5231BS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOT363; double independent
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: double independent
Case: SOT363
Zener voltage: 5.1V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOT363; double independent
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: double independent
Case: SOT363
Zener voltage: 5.1V
Type of diode: Zener
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| MMBZ5231B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.35W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.35W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
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| MMBZ5231BQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.35W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.1V; SMD; SOT23; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.35W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 5.1V
Type of diode: Zener
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| MMBZ5231BTS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOT363; triple independent
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: triple independent
Case: SOT363
Zener voltage: 5.1V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOT363; triple independent
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: triple independent
Case: SOT363
Zener voltage: 5.1V
Type of diode: Zener
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| 74LVC32AT14-13 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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| LMV324BG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; Uoper: 2.7÷5.5V; SO14; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; Uoper: 2.7÷5.5V; SO14; 10dB
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Operating voltage: 2.7...5.5V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Open-loop gain: 10dB
Integrated circuit features: rail-to-rail output
Input offset voltage: 7mV
Kind of package: reel; tape
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| 74AHCT08T14-13 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
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| PD3S140Q-7 |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 22A
Semiconductor structure: single diode
Case: PowerDI®323
Mounting: SMD
Leakage current: 50µA
Capacitance: 32pF
Kind of package: reel; tape
Max. forward voltage: 0.55V
Application: automotive industry
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 22A
Semiconductor structure: single diode
Case: PowerDI®323
Mounting: SMD
Leakage current: 50µA
Capacitance: 32pF
Kind of package: reel; tape
Max. forward voltage: 0.55V
Application: automotive industry
Load current: 1A
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| DESD3512SO-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 36V; 11A; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 35V
Breakdown voltage: 36V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 32pF
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 36V; 11A; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 35V
Breakdown voltage: 36V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 32pF
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
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| DMP4065SQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMP4047SSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.2A
Pulsed drain current: -26A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.2A
Pulsed drain current: -26A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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Мінімальне замовлення: 2500 шт
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| AZ23C51-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; SOT23; double,common anode; reel,tape
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Semiconductor structure: common anode; double
Zener voltage: 51V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; SOT23; double,common anode; reel,tape
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Semiconductor structure: common anode; double
Zener voltage: 51V
Type of diode: Zener
Tolerance: ±5%
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.66 грн |
| 27+ | 15.43 грн |
| 34+ | 12.38 грн |
| 50+ | 10.56 грн |
| 100+ | 8.91 грн |
| 319+ | 2.97 грн |
| 879+ | 2.81 грн |
| AZ23C5V6W-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOT323; double,common anode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: common anode; double
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOT323; double,common anode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: common anode; double
Kind of package: reel; tape
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| MMBT3906-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 3000pcs.
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| MMBT3906T-13-F |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 10000pcs.
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| MMBT3906LP-7 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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| MMBT3906-13-F |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
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| MMBT3906FA-7B |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
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| MMBT3906FZ-7B |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
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| MMBT3906LP-7B |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
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| MMBT3906Q-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
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| FMMT620TA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Current gain: 10...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Current gain: 10...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Manufacturer standard package: 3000pcs.
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| FMMT620QTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 0.806W
Case: SOT23
Current gain: 10...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...160MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 5A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 0.806W
Case: SOT23
Current gain: 10...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...160MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 5A
Application: automotive industry
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| ZVN4306AV |
|
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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| ZVN4306ASTZ |
|
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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| ZVN4206AV |
|
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Pulsed drain current: 8A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Pulsed drain current: 8A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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| AP2303MTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Operating voltage: 1.2...5.5/3...5.5V DC
Mounting: SMD
Output current: 1.75A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Application: for DDR memories
Output voltage: 0.6...3.3V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Operating voltage: 1.2...5.5/3...5.5V DC
Mounting: SMD
Output current: 1.75A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Application: for DDR memories
Output voltage: 0.6...3.3V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
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Мінімальне замовлення: 4000 шт
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| AP2303MPTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Operating voltage: 1.2...5.5/3...5.5V DC
Mounting: SMD
Output current: 1.75A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Application: for DDR memories
Output voltage: 0.6...3.3V
Kind of package: reel; tape
Case: PSOP8
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Operating voltage: 1.2...5.5/3...5.5V DC
Mounting: SMD
Output current: 1.75A
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Application: for DDR memories
Output voltage: 0.6...3.3V
Kind of package: reel; tape
Case: PSOP8
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
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Мінімальне замовлення: 4000 шт
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| AP7383-36FDC-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.05A; uDFN6; SMD
Manufacturer series: AP7383
Output current: 50mA
Type of integrated circuit: voltage regulator
Voltage drop: 1.5V
Operating temperature: -40...125°C
Output voltage: 3.6V
Kind of package: reel; tape
Case: uDFN6
Number of channels: 1
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 3.5...30V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.05A; uDFN6; SMD
Manufacturer series: AP7383
Output current: 50mA
Type of integrated circuit: voltage regulator
Voltage drop: 1.5V
Operating temperature: -40...125°C
Output voltage: 3.6V
Kind of package: reel; tape
Case: uDFN6
Number of channels: 1
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 3.5...30V
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Мінімальне замовлення: 3000 шт
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| AP2171WG-7 |
|
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Active logical level: high
на замовлення 2996 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.44 грн |
| 30+ | 13.95 грн |
| 35+ | 11.97 грн |
| 50+ | 10.73 грн |
| 100+ | 9.66 грн |
| 250+ | 9.16 грн |
| S1N-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A
Max. off-state voltage: 1.2kV
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 6pF
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A
Max. off-state voltage: 1.2kV
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 6pF
Type of diode: rectifying
Mounting: SMD
на замовлення 431 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.22 грн |
| 41+ | 10.07 грн |
| 100+ | 7.72 грн |
| SMAJ60CAQ-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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| SMAJ60CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 5000 шт
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| DDTA114YE-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 68
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| DMN67D8L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; 0.34W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Power dissipation: 0.34W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 0.8A; 0.34W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Power dissipation: 0.34W
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN67D8LW-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180mA; Idm: 0.8A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.8A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180mA; Idm: 0.8A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.8A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
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Мінімальне замовлення: 10000 шт
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| DMN67D8LW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180mA; Idm: 0.8A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.8A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180mA; Idm: 0.8A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.8A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
товару немає в наявності
В кошику
од. на суму грн.
| DMN67D8L-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170mA; Idm: 0.8A; 570mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Pulsed drain current: 0.8A
Power dissipation: 570mW
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170mA; Idm: 0.8A; 570mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Pulsed drain current: 0.8A
Power dissipation: 570mW
Case: SOT23
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN67D8LDW-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 180mA; Idm: 0.8A; 410mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.8A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 180mA; Idm: 0.8A; 410mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.8A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 821pC
товару немає в наявності
В кошику
од. на суму грн.