Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74771) > Сторінка 1233 з 1247
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ZXTP2012ZTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4.3A Power dissipation: 1.5W Case: SOT89 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 120MHz |
на замовлення 2046 шт: термін постачання 21-30 дні (днів) |
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ZXTP2012GTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Power dissipation: 1.6W Case: SOT223 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 120MHz |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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2DA1201Y-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 0.8A Power dissipation: 1.5W Case: SOT89 Current gain: 120...240 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 160MHz |
на замовлення 794 шт: термін постачання 21-30 дні (днів) |
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| DMN2011UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.27W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 11.4A Gate charge: 84nC On-state resistance: 35mΩ Pulsed drain current: 80A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2011UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 11.4A Gate charge: 56nC On-state resistance: 35mΩ Pulsed drain current: 80A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2011UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 11.4A Pulsed drain current: 80A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 56nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2.1W Case: V-DFN2050-4 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 9.8A Gate charge: 56nC On-state resistance: 13mΩ Pulsed drain current: 80A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2014LHAB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.1W Case: U-DFN2030-6 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 7.4A Gate charge: 16nC On-state resistance: 28mΩ Pulsed drain current: 45A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2015UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±12V Drain current: 10A Gate charge: 45.6nC On-state resistance: 50mΩ Pulsed drain current: 80A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2015UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.3A Pulsed drain current: 70A Power dissipation: 0.5W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 42.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMN2016LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.77W Case: U-DFN3030-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Gate-source voltage: ±8V Drain current: 4.1A Gate charge: 16nC On-state resistance: 30mΩ Pulsed drain current: 30A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2101SG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Kind of integrated circuit: high-side; USB switch Active logical level: low Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD Case: SO8 Output current: 2A On-state resistance: 90mΩ Number of channels: 1 Supply voltage: 2.7...5.5V DC Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FZT605TA | DIODES INCORPORATED |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 1.5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. Current gain: 2000...100000 |
на замовлення 1388 шт: термін постачання 21-30 дні (днів) |
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1SMB5956B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PAM2401YPADJ | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 0.9÷4.75VDC; Uout: 2.5÷5VDC; 3A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 0.9...4.75V DC Output voltage: 2.5...5V DC Output current: 3A Case: U-DFN3030-12 Mounting: SMD Frequency: 1MHz Topology: boost Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP7343D-21W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.1V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Tolerance: ±1% Mounting: SMD Case: SOT25 Operating temperature: -40...85°C Kind of package: reel; tape Integrated circuit features: output discharge; shutdown mode control input Kind of voltage regulator: fixed; LDO; linear Output current: 0.3A Voltage drop: 0.41V Output voltage: 2.1V Number of channels: 1 Manufacturer series: AP7343 Input voltage: 1.7...5.25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ110A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 122÷135V; 2.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 110V Breakdown voltage: 122...135V Max. forward impulse current: 2.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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DRDNB21D-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; relay controller; 200mA; Ch: 2; open collector Type of integrated circuit: power switch Kind of integrated circuit: relay controller Output current: 0.2A Number of channels: 2 Mounting: SMD Case: SOT363 Kind of package: reel; tape Supply voltage: 50V DC Kind of output: open collector Operating temperature: -55...150°C |
на замовлення 2713 шт: термін постачання 21-30 дні (днів) |
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AP2331W-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Mounting: SMD Case: SC59 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 2.7...5.2V DC |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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DDTA113ZCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 1kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
на замовлення 2350 шт: термін постачання 21-30 дні (днів) |
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| DDTA115ECA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ Mounting: SMD Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 82 Quantity in set/package: 3000pcs. Base-emitter resistor: 100kΩ Base resistor: 100kΩ Frequency: 250MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ51A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SMBJ51AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMAJ10AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P4SMAJ10ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ85A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2929 шт: термін постачання 21-30 дні (днів) |
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| B330B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 80A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCX52TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX5210TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Quantity in set/package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMP6018LPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Case: PowerDI5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -240A Drain-source voltage: -60V Drain current: -48A Gate charge: 13.7nC On-state resistance: 26mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP6018LPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Case: PowerDI5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -240A Drain-source voltage: -60V Drain current: -48A Gate charge: 13.7nC On-state resistance: 26mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP6023LEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Mounting: SMD Case: SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -50A Drain-source voltage: -60V Drain current: -5.6A Gate charge: 53.1nC On-state resistance: 35mΩ Power dissipation: 1.3W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP6023LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8 Mounting: SMD Case: SO8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -50A Drain-source voltage: -60V Drain current: -5.3A Gate charge: 53.1nC On-state resistance: 33mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMP6050SFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W Mounting: SMD Case: PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -32A Drain-source voltage: -60V Drain current: -3.9A On-state resistance: 50mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP6050SPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W Mounting: SMD Case: PowerDI5060-8 Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -45A Drain-source voltage: -60V Drain current: -4.5A Gate charge: 30nC On-state resistance: 70mΩ Power dissipation: 2.4W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMG3415UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A On-state resistance: 71mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Version: ESD Application: automotive industry |
на замовлення 711 шт: термін постачання 21-30 дні (днів) |
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| DMG3415UFY4Q-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -16V Drain current: -2.2A Power dissipation: 1.35W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 10nC Pulsed drain current: -12A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMG3415U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2152SG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD Supply voltage: 2.7...5.5V DC Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of output: P-Channel Type of integrated circuit: power switch Kind of package: reel; tape Mounting: SMD Case: SO8 On-state resistance: 0.115Ω Output current: 0.5A Number of channels: 2 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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AP3445LW6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SOT26 Input voltage: 2.7...5.5V DC Output voltage: 0.6...5.5V DC Output current: 2A Case: SOT26 Mounting: SMD Operating temperature: -40...85°C Duty cycle factor: 0...100% Frequency: 0.8...1.2MHz Topology: buck Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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SDM40E20LS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape; 300mW Semiconductor structure: double series Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 120pF Power dissipation: 0.3W Max. forward voltage: 0.43V Load current: 0.4A Max. forward impulse current: 2A Max. off-state voltage: 20V |
на замовлення 8052 шт: термін постачання 21-30 дні (днів) |
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SDM40E20LC-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.31V Load current: 0.4A Max. forward impulse current: 2A Max. off-state voltage: 20V |
на замовлення 2636 шт: термін постачання 21-30 дні (днів) |
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2DD1664Q-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 1A; 1W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 120...270 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Frequency: 280MHz Application: automotive industry |
на замовлення 972 шт: термін постачання 21-30 дні (днів) |
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| 2DD1664P-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 1A; 2W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 1A Power dissipation: 2W Case: SOT89 Pulsed collector current: 2A Current gain: 82...180 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Frequency: 280MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2DD1664R-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 1A; 2W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 1A Power dissipation: 2W Case: SOT89 Pulsed collector current: 2A Current gain: 180...390 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Frequency: 280MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
KBJ402G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ZXTP2012ZQTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4.3A Power dissipation: 2.1W Case: SOT89 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 120MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMC3071LVT-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| 2DC4672-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89 Kind of package: reel; tape Mounting: SMD Type of transistor: NPN Case: SOT89 Power dissipation: 2W Collector current: 3A Pulsed collector current: 6A Current gain: 45...270 Collector-emitter voltage: 50V Quantity in set/package: 2500pcs. Frequency: 180MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| S5GC-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Max. forward voltage: 1.15V Load current: 5A Max. off-state voltage: 0.4kV Case: SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
74LV07AT14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LV Technology: CMOS Case: TSSOP14 Mounting: SMD Kind of package: reel; tape Number of channels: 6 Kind of input: with Schmitt trigger Operating temperature: -40...125°C Quiescent current: 20µA Supply voltage: 2...5.5V DC Kind of output: open drain Kind of integrated circuit: buffer; non-inverting Type of integrated circuit: digital Manufacturer series: LV |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 5960 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 4.7V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
на замовлення 966 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
на замовлення 1340 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZT52C4V7TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
B120-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Capacitance: 110pF Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 20V Case: SMA Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 4019 шт: термін постачання 21-30 дні (днів) |
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| 74LVC1G02SE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: NOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74LVC1G02FW4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
74LVC1G02W5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: NOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. |
| ZXTP2012ZTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
на замовлення 2046 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.18 грн |
| 17+ | 23.71 грн |
| 50+ | 20.11 грн |
| 100+ | 18.83 грн |
| 250+ | 17.39 грн |
| 500+ | 16.50 грн |
| 1000+ | 15.70 грн |
| 2000+ | 14.98 грн |
| ZXTP2012GTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
на замовлення 210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.55 грн |
| 10+ | 49.27 грн |
| 100+ | 33.89 грн |
| 2DA1201Y-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.8A
Power dissipation: 1.5W
Case: SOT89
Current gain: 120...240
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.8A
Power dissipation: 1.5W
Case: SOT89
Current gain: 120...240
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
на замовлення 794 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.16 грн |
| 39+ | 10.34 грн |
| 50+ | 9.21 грн |
| 100+ | 9.05 грн |
| DMN2011UFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.27W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 84nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.27W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 84nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMN2011UFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 56nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 11.4A
Gate charge: 56nC
On-state resistance: 35mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMN2011UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 11.4A
Pulsed drain current: 80A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 11.4A
Pulsed drain current: 80A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMN2011UFX-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.1W
Case: V-DFN2050-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 9.8A
Gate charge: 56nC
On-state resistance: 13mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.1W
Case: V-DFN2050-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 9.8A
Gate charge: 56nC
On-state resistance: 13mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMN2014LHAB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: U-DFN2030-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 7.4A
Gate charge: 16nC
On-state resistance: 28mΩ
Pulsed drain current: 45A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.1W
Case: U-DFN2030-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 7.4A
Gate charge: 16nC
On-state resistance: 28mΩ
Pulsed drain current: 45A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMN2015UFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 10A
Gate charge: 45.6nC
On-state resistance: 50mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±12V
Drain current: 10A
Gate charge: 45.6nC
On-state resistance: 50mΩ
Pulsed drain current: 80A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMN2015UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.3A
Pulsed drain current: 70A
Power dissipation: 0.5W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.3A
Pulsed drain current: 70A
Power dissipation: 0.5W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 42.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMN2016LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.77W
Case: U-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 4.1A
Gate charge: 16nC
On-state resistance: 30mΩ
Pulsed drain current: 30A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.77W
Case: U-DFN3030-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 4.1A
Gate charge: 16nC
On-state resistance: 30mΩ
Pulsed drain current: 30A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| AP2101SG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Output current: 2A
On-state resistance: 90mΩ
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Output current: 2A
On-state resistance: 90mΩ
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: power switch
товару немає в наявності
В кошику
од. на суму грн.
| FZT605TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Current gain: 2000...100000
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Current gain: 2000...100000
на замовлення 1388 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.41 грн |
| 17+ | 24.52 грн |
| 100+ | 15.86 грн |
| 250+ | 13.54 грн |
| 500+ | 12.18 грн |
| 1000+ | 10.98 грн |
| 1SMB5956B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
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| PAM2401YPADJ |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.9÷4.75VDC; Uout: 2.5÷5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 0.9...4.75V DC
Output voltage: 2.5...5V DC
Output current: 3A
Case: U-DFN3030-12
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.9÷4.75VDC; Uout: 2.5÷5VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 0.9...4.75V DC
Output voltage: 2.5...5V DC
Output current: 3A
Case: U-DFN3030-12
Mounting: SMD
Frequency: 1MHz
Topology: boost
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
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| AP7343D-21W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Voltage drop: 0.41V
Output voltage: 2.1V
Number of channels: 1
Manufacturer series: AP7343
Input voltage: 1.7...5.25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: output discharge; shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.3A
Voltage drop: 0.41V
Output voltage: 2.1V
Number of channels: 1
Manufacturer series: AP7343
Input voltage: 1.7...5.25V
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| SMAJ110A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.60 грн |
| 75+ | 5.61 грн |
| 100+ | 5.05 грн |
| DRDNB21D-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; relay controller; 200mA; Ch: 2; open collector
Type of integrated circuit: power switch
Kind of integrated circuit: relay controller
Output current: 0.2A
Number of channels: 2
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Supply voltage: 50V DC
Kind of output: open collector
Operating temperature: -55...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; relay controller; 200mA; Ch: 2; open collector
Type of integrated circuit: power switch
Kind of integrated circuit: relay controller
Output current: 0.2A
Number of channels: 2
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Supply voltage: 50V DC
Kind of output: open collector
Operating temperature: -55...150°C
на замовлення 2713 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.73 грн |
| 15+ | 26.92 грн |
| 25+ | 22.67 грн |
| 100+ | 17.47 грн |
| 250+ | 14.58 грн |
| 500+ | 13.06 грн |
| AP2331W-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.84 грн |
| 27+ | 15.38 грн |
| 30+ | 13.70 грн |
| 35+ | 11.70 грн |
| 50+ | 10.58 грн |
| 100+ | 9.69 грн |
| 250+ | 8.89 грн |
| 500+ | 8.41 грн |
| DDTA113ZCA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 2350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.42 грн |
| 250+ | 1.63 грн |
| 500+ | 1.47 грн |
| DDTA115ECA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Quantity in set/package: 3000pcs.
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
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| SMBJ51A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ51AQ-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷65.2V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| SMAJ10AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| P4SMAJ10ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ85A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2929 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.71 грн |
| 32+ | 12.58 грн |
| 100+ | 7.13 грн |
| 500+ | 5.29 грн |
| 1000+ | 4.89 грн |
| B330B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
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| BCX52TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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| BCX5210TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
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| DMP6018LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP6018LPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -240A
Drain-source voltage: -60V
Drain current: -48A
Gate charge: 13.7nC
On-state resistance: 26mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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| DMP6023LEQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -60V
Drain current: -5.6A
Gate charge: 53.1nC
On-state resistance: 35mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -60V
Drain current: -5.6A
Gate charge: 53.1nC
On-state resistance: 35mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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| DMP6023LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -60V
Drain current: -5.3A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -50A; 1.6W; SO8
Mounting: SMD
Case: SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -60V
Drain current: -5.3A
Gate charge: 53.1nC
On-state resistance: 33mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP6050SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP6050SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
Gate charge: 30nC
On-state resistance: 70mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
Gate charge: 30nC
On-state resistance: 70mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMG3415UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 71mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 71mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Version: ESD
Application: automotive industry
на замовлення 711 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.10 грн |
| 15+ | 28.36 грн |
| 17+ | 25.00 грн |
| 100+ | 15.62 грн |
| 500+ | 11.46 грн |
| DMG3415UFY4Q-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -2.2A
Power dissipation: 1.35W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 10nC
Pulsed drain current: -12A
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -2.2A
Power dissipation: 1.35W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 10nC
Pulsed drain current: -12A
Application: automotive industry
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| DMG3415U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 0.9W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| AP2152SG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: SO8
On-state resistance: 0.115Ω
Output current: 0.5A
Number of channels: 2
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: SO8
On-state resistance: 0.115Ω
Output current: 0.5A
Number of channels: 2
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.20 грн |
| 16+ | 25.48 грн |
| AP3445LW6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SOT26
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Frequency: 0.8...1.2MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SOT26
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Frequency: 0.8...1.2MHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.98 грн |
| 28+ | 14.42 грн |
| 32+ | 12.74 грн |
| 37+ | 10.90 грн |
| 100+ | 9.05 грн |
| 250+ | 8.25 грн |
| 500+ | 7.85 грн |
| SDM40E20LS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape; 300mW
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Power dissipation: 0.3W
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape; 300mW
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 120pF
Power dissipation: 0.3W
Max. forward voltage: 0.43V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
на замовлення 8052 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.33 грн |
| 20+ | 20.67 грн |
| 50+ | 16.82 грн |
| 100+ | 15.22 грн |
| 250+ | 13.38 грн |
| 500+ | 12.02 грн |
| 1000+ | 10.66 грн |
| 3000+ | 9.69 грн |
| SDM40E20LC-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.31V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 20V; 0.4A; reel,tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.31V
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
на замовлення 2636 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.57 грн |
| 25+ | 16.18 грн |
| 27+ | 15.06 грн |
| 50+ | 12.82 грн |
| 100+ | 11.94 грн |
| 500+ | 10.09 грн |
| 1000+ | 9.29 грн |
| 1500+ | 8.89 грн |
| 2DD1664Q-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 120...270
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 280MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 120...270
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 280MHz
Application: automotive industry
на замовлення 972 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.41 грн |
| 14+ | 29.80 грн |
| 16+ | 25.56 грн |
| 100+ | 14.66 грн |
| 500+ | 10.34 грн |
| 2DD1664P-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 1A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 2A
Current gain: 82...180
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 280MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 1A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 2A
Current gain: 82...180
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 280MHz
Application: automotive industry
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| 2DD1664R-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 1A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 2A
Current gain: 180...390
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 280MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 1A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 2A
Current gain: 180...390
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 280MHz
Application: automotive industry
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| KBJ402G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| ZXTP2012ZQTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 2.1W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 2.1W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Application: automotive industry
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| DMC3071LVT-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.33 грн |
| 2DC4672-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89
Kind of package: reel; tape
Mounting: SMD
Type of transistor: NPN
Case: SOT89
Power dissipation: 2W
Collector current: 3A
Pulsed collector current: 6A
Current gain: 45...270
Collector-emitter voltage: 50V
Quantity in set/package: 2500pcs.
Frequency: 180MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89
Kind of package: reel; tape
Mounting: SMD
Type of transistor: NPN
Case: SOT89
Power dissipation: 2W
Collector current: 3A
Pulsed collector current: 6A
Current gain: 45...270
Collector-emitter voltage: 50V
Quantity in set/package: 2500pcs.
Frequency: 180MHz
Polarisation: bipolar
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| S5GC-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Load current: 5A
Max. off-state voltage: 0.4kV
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Load current: 5A
Max. off-state voltage: 0.4kV
Case: SMC
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| 74LV07AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LV
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 6
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Quiescent current: 20µA
Supply voltage: 2...5.5V DC
Kind of output: open drain
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Manufacturer series: LV
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP14; LV
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 6
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Quiescent current: 20µA
Supply voltage: 2...5.5V DC
Kind of output: open drain
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Manufacturer series: LV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.70 грн |
| BZT52C4V7S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 5960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.63 грн |
| 59+ | 6.89 грн |
| 69+ | 5.85 грн |
| 85+ | 4.73 грн |
| 147+ | 2.73 грн |
| 500+ | 1.89 грн |
| 1000+ | 1.73 грн |
| 3000+ | 1.60 грн |
| BZT52C4V7LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.7V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.7V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 966 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.94 грн |
| 50+ | 8.17 грн |
| 100+ | 4.83 грн |
| BZT52C4V7Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.90 грн |
| 79+ | 5.13 грн |
| 90+ | 4.49 грн |
| 123+ | 3.27 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.02 грн |
| BZT52C4V7SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C4V7TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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| B120-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 20V
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 20V
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 4019 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.49 грн |
| 57+ | 7.13 грн |
| 100+ | 5.12 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.82 грн |
| 2000+ | 3.55 грн |
| 2500+ | 3.47 грн |
| 74LVC1G02SE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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| 74LVC1G02FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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од. на суму грн.
| 74LVC1G02W5-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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од. на суму грн.



















