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AP7370-36WR-7 DIODES INCORPORATED AP7370.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.6V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
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APR346K6TR-G1 APR346K6TR-G1 DIODES INCORPORATED APR346.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; Ch: 1; SOT26; flyback; 4.6÷25V; reel,tape
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Application: SMPS
Supply voltage: 4.6...25V
Kind of package: reel; tape
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APR340W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB40FD3056A0D6&compId=APR340.pdf?ci_sign=2aaab3d77ba2bd1707c7b242bc594ee102ec81ac Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; flyback; 0÷22VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V DC
Kind of package: reel; tape
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APR347W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB49F039B800D6&compId=APR347.pdf?ci_sign=f1830872ec4c6372842b88a73da69dceaeaa0aa0 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; flyback; 0÷22VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V DC
Kind of package: reel; tape
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APR348W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB5839DFD0E0D6&compId=APR348.pdf?ci_sign=5e16532af423fbd0e2010044bb6bde761d39ef85 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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AP3304AW6-7 DIODES INCORPORATED AP3304A.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; Ch: 1; SOT26; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 10...50V DC
Kind of package: reel; tape
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APR345K6TR-G1 APR345K6TR-G1 DIODES INCORPORATED Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating voltage: 0...13V DC
Kind of package: reel; tape
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APR349W6-7 DIODES INCORPORATED APR349.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 0÷24V; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 0...24V
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AP3125HAKTR-G1 AP3125HAKTR-G1 DIODES INCORPORATED Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷108kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -20...125°C
Application: SMPS
Frequency: 20...108kHz
Supply voltage: 10...25V
Duty cycle factor: 0...80%
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AP3125CMKTR-G1 AP3125CMKTR-G1 DIODES INCORPORATED Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Frequency: 60...70kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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AP3125HBKTR-G1 AP3125HBKTR-G1 DIODES INCORPORATED Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 92÷108kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Frequency: 92...108kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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SMCJ48A-13-F SMCJ48A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1185 шт:
термін постачання 21-30 дні (днів)
13+34.75 грн
14+29.04 грн
15+27.35 грн
100+22.27 грн
500+20.49 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMCJ15CA-13-F SMCJ15CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150A-13-F SMCJ150A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150CA-13-F SMCJ150CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ15A-13-F SMCJ15A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT585B5V6T-7 BZT585B5V6T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
10+40.34 грн
Мінімальне замовлення: 10
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BCX55TA BCX55TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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BCX5510TA BCX5510TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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DMP6110SVT-7 DMP6110SVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1DF2052C878BF&compId=DMP6110SVT.pdf?ci_sign=bf2b487b25cf772f3c29be1ccad69b6ebf614269 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: -6.5A
On-state resistance: 0.13Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
на замовлення 2886 шт:
термін постачання 21-30 дні (днів)
10+47.79 грн
12+34.69 грн
50+26.87 грн
100+23.96 грн
250+20.57 грн
500+18.56 грн
1000+16.70 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN6040SVT-7 DMN6040SVT-7 DIODES INCORPORATED DMN6040SVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: 30A
Drain current: 5A
Gate charge: 22.4nC
On-state resistance: 60mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
11+42.57 грн
13+32.27 грн
30+25.98 грн
100+19.69 грн
250+16.22 грн
500+14.20 грн
1000+12.67 грн
Мінімальне замовлення: 11
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DMP3050LVT-7 DMP3050LVT-7 DIODES INCORPORATED DMP3050LVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -3.5A
On-state resistance: 50mΩ
Power dissipation: 1.6W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
на замовлення 2411 шт:
термін постачання 21-30 дні (днів)
12+36.49 грн
14+29.37 грн
16+26.30 грн
100+15.97 грн
500+11.46 грн
1000+10.17 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AP62301WU-7 AP62301WU-7 DIODES INCORPORATED AP62300_AP62301_AP62300T.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 83%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2858 шт:
термін постачання 21-30 дні (днів)
16+27.80 грн
20+20.81 грн
22+18.47 грн
26+15.81 грн
50+14.36 грн
100+14.04 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP62201WU-7 AP62201WU-7 DIODES INCORPORATED AP62200_AP62201_AP62200T.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 84%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2845 шт:
термін постачання 21-30 дні (днів)
21+20.85 грн
26+15.81 грн
30+13.88 грн
35+11.78 грн
100+11.46 грн
Мінімальне замовлення: 21
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DT1446-04TS-7 DT1446-04TS-7 DIODES INCORPORATED DT1446-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 4.7A; unidirectional; TSOT26; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: HDMI
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DMN4060SVT-7 DMN4060SVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9A75BEE4C78BF&compId=DMN4060SVT.pdf?ci_sign=fdb3230d197884431f6bb0be3cb699dff6491791 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4.1A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: 4.1A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
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DMN10H170SVTQ-7 DMN10H170SVTQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8A1966A3A38BF&compId=DMN10H170SVT.pdf?ci_sign=a64b907b6f7bde2e9bcbba1dd386ab3f50d1bb03 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 2.3A
On-state resistance: 0.2Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
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DMN61D8LVT-13 DMN61D8LVT-13 DIODES INCORPORATED DMN61D8L-LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-13 DMN61D8LVTQ-13 DIODES INCORPORATED DMN61D8LVTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-7 DMN61D8LVTQ-7 DIODES INCORPORATED DMN61D8LVTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMP2036UVT-13 DMP2036UVT-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP2036UVT-7 DMP2036UVT-7 DIODES INCORPORATED DMP2036UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP3050LVTQ-7 DIODES INCORPORATED DMP3050LVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -4.5A
Gate charge: 10.5nC
On-state resistance: 50mΩ
Power dissipation: 1W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
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MMBD7000HC-7-F MMBD7000HC-7-F DIODES INCORPORATED MMBD7000HS_HC.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 3143 шт:
термін постачання 21-30 дні (днів)
63+6.95 грн
87+4.68 грн
95+4.28 грн
137+2.95 грн
500+2.23 грн
1000+1.94 грн
3000+1.53 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD7000-7-F MMBD7000-7-F DIODES INCORPORATED MMBD7000.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 1150 шт:
термін постачання 21-30 дні (днів)
63+6.95 грн
87+4.68 грн
99+4.11 грн
168+2.41 грн
500+1.66 грн
1000+1.43 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD4148W-7-F DIODES INCORPORATED MMBD4148W_BAS16W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148PLM-7 DIODES INCORPORATED MMBD4148PLM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Features of semiconductor devices: small signal
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
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SBR8U60P5-13 SBR8U60P5-13 DIODES INCORPORATED SBR8U60P5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
на замовлення 3110 шт:
термін постачання 21-30 дні (днів)
7+70.37 грн
10+43.00 грн
100+33.32 грн
250+30.25 грн
500+28.16 грн
1000+26.30 грн
2000+24.53 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AP2280-1WG-7 AP2280-1WG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP2280-1FMG-7 AP2280-1FMG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
на замовлення 775 шт:
термін постачання 21-30 дні (днів)
13+35.62 грн
18+23.64 грн
25+20.98 грн
100+18.15 грн
250+16.86 грн
500+16.22 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AP22804ASN-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BSN-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2280-2FMG-7 DIODES INCORPORATED AP2280.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP22804AM8-13 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BM8-13 DIODES INCORPORATED AP22804_14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22804BW5-7 AP22804BW5-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DM8W17AQ-13 DIODES INCORPORATED DM8W18AQ-DM8W43AQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Mounting: SMD
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SBR1045CTLQ-13 DIODES INCORPORATED SBR1045CTLQ.pdf Category: SMD Schottky diodes
Description: SBR1045CTLQ-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+30.93 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GBJ1504-F DIODES INCORPORATED ds21219.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBJ1510-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984FE26664303D8BF&compId=GBJ15_ser.pdf?ci_sign=d0ee1f72a3eea29423c53400a5242565e88a5ead Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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SBR2045CT-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
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DMT10H010SPS-13 DIODES INCORPORATED DMT10H010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.6A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH6010SPS-13 DIODES INCORPORATED DMTH6010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 400A
Drain current: 10.4A
Gate charge: 38.1nC
On-state resistance: 8mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPS-13 DIODES INCORPORATED DMTH10H010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPSQ-13 DIODES INCORPORATED DMTH10H010SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Application: automotive industry
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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74LVC2G126HD4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109D54D460D3&compId=74LVC2G126.pdf?ci_sign=4161d9d2ba6e3a33ab5b574c9490c45adcf792b2 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMNH45M7SCT DMNH45M7SCT DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
3+145.09 грн
50+81.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMNH6008SCT DMNH6008SCT DIODES INCORPORATED DMNH6008SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
3+205.91 грн
10+102.46 грн
50+79.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMBJ78A-13-F SMBJ78A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP7370-36WR-7 AP7370.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.6V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
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APR346K6TR-G1 APR346.pdf
APR346K6TR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; Ch: 1; SOT26; flyback; 4.6÷25V; reel,tape
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Application: SMPS
Supply voltage: 4.6...25V
Kind of package: reel; tape
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APR340W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB40FD3056A0D6&compId=APR340.pdf?ci_sign=2aaab3d77ba2bd1707c7b242bc594ee102ec81ac
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; flyback; 0÷22VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V DC
Kind of package: reel; tape
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APR347W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB49F039B800D6&compId=APR347.pdf?ci_sign=f1830872ec4c6372842b88a73da69dceaeaa0aa0
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; flyback; 0÷22VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V DC
Kind of package: reel; tape
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APR348W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB0BB5839DFD0E0D6&compId=APR348.pdf?ci_sign=5e16532af423fbd0e2010044bb6bde761d39ef85
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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AP3304AW6-7 AP3304A.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; Ch: 1; SOT26; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 10...50V DC
Kind of package: reel; tape
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APR345K6TR-G1
APR345K6TR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating voltage: 0...13V DC
Kind of package: reel; tape
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APR349W6-7 APR349.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 0÷24V; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: DC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 0...24V
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AP3125HAKTR-G1
AP3125HAKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷108kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -20...125°C
Application: SMPS
Frequency: 20...108kHz
Supply voltage: 10...25V
Duty cycle factor: 0...80%
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AP3125CMKTR-G1
AP3125CMKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 60÷70kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Frequency: 60...70kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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AP3125HBKTR-G1
AP3125HBKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 92÷108kHz; Ch: 1; SOT26; flyback
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Frequency: 92...108kHz
Supply voltage: 10...25V
Duty cycle factor: 70...80%
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SMCJ48A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ48A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.75 грн
14+29.04 грн
15+27.35 грн
100+22.27 грн
500+20.49 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMCJ15CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ15CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ150A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ150CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ15A-13-F SMCJ_ser.pdf
SMCJ15A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT585B5V6T-7 BZT585BxVxT.pdf
BZT585B5V6T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+40.34 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BCX55TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX55TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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BCX5510TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX5510TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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DMP6110SVT-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1DF2052C878BF&compId=DMP6110SVT.pdf?ci_sign=bf2b487b25cf772f3c29be1ccad69b6ebf614269
DMP6110SVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: -6.5A
On-state resistance: 0.13Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
на замовлення 2886 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+47.79 грн
12+34.69 грн
50+26.87 грн
100+23.96 грн
250+20.57 грн
500+18.56 грн
1000+16.70 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN6040SVT-7 DMN6040SVT.pdf
DMN6040SVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: 30A
Drain current: 5A
Gate charge: 22.4nC
On-state resistance: 60mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.57 грн
13+32.27 грн
30+25.98 грн
100+19.69 грн
250+16.22 грн
500+14.20 грн
1000+12.67 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMP3050LVT-7 DMP3050LVT.pdf
DMP3050LVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -3.5A
On-state resistance: 50mΩ
Power dissipation: 1.6W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
на замовлення 2411 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.49 грн
14+29.37 грн
16+26.30 грн
100+15.97 грн
500+11.46 грн
1000+10.17 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AP62301WU-7 AP62300_AP62301_AP62300T.pdf
AP62301WU-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 83%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2858 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.80 грн
20+20.81 грн
22+18.47 грн
26+15.81 грн
50+14.36 грн
100+14.04 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP62201WU-7 AP62200_AP62201_AP62200T.pdf
AP62201WU-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 84%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2845 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.85 грн
26+15.81 грн
30+13.88 грн
35+11.78 грн
100+11.46 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DT1446-04TS-7 DT1446-04TS.pdf
DT1446-04TS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 4.7A; unidirectional; TSOT26; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: HDMI
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DMN4060SVT-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9A75BEE4C78BF&compId=DMN4060SVT.pdf?ci_sign=fdb3230d197884431f6bb0be3cb699dff6491791
DMN4060SVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4.1A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: 4.1A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
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DMN10H170SVTQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8A1966A3A38BF&compId=DMN10H170SVT.pdf?ci_sign=a64b907b6f7bde2e9bcbba1dd386ab3f50d1bb03
DMN10H170SVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 2.3A
On-state resistance: 0.2Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
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DMN61D8LVT-13 DMN61D8L-LVT.pdf
DMN61D8LVT-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-13 DMN61D8LVTQ.pdf
DMN61D8LVTQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-7 DMN61D8LVTQ.pdf
DMN61D8LVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMP2036UVT-13
DMP2036UVT-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP2036UVT-7 DMP2036UVT.pdf
DMP2036UVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP3050LVTQ-7 DMP3050LVTQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -4.5A
Gate charge: 10.5nC
On-state resistance: 50mΩ
Power dissipation: 1W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
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MMBD7000HC-7-F MMBD7000HS_HC.pdf
MMBD7000HC-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 3143 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.95 грн
87+4.68 грн
95+4.28 грн
137+2.95 грн
500+2.23 грн
1000+1.94 грн
3000+1.53 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD7000-7-F MMBD7000.pdf
MMBD7000-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 1150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.95 грн
87+4.68 грн
99+4.11 грн
168+2.41 грн
500+1.66 грн
1000+1.43 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD4148W-7-F MMBD4148W_BAS16W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148TW-7-F ds30154.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148PLM-7 MMBD4148PLM.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Features of semiconductor devices: small signal
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
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SBR8U60P5-13 SBR8U60P5.pdf
SBR8U60P5-13
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
на замовлення 3110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.37 грн
10+43.00 грн
100+33.32 грн
250+30.25 грн
500+28.16 грн
1000+26.30 грн
2000+24.53 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AP2280-1WG-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47
AP2280-1WG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP2280-1FMG-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47
AP2280-1FMG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
на замовлення 775 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.62 грн
18+23.64 грн
25+20.98 грн
100+18.15 грн
250+16.86 грн
500+16.22 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AP22804ASN-7 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BSN-7 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2280-2FMG-7 AP2280.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP22804AM8-13 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BM8-13 AP22804_14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22804BW5-7 AP22804-14.pdf
AP22804BW5-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DM8W17AQ-13 DM8W18AQ-DM8W43AQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Mounting: SMD
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SBR1045CTLQ-13 SBR1045CTLQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: SBR1045CTLQ-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+30.93 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GBJ1504-F ds21219.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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GBJ1510-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984FE26664303D8BF&compId=GBJ15_ser.pdf?ci_sign=d0ee1f72a3eea29423c53400a5242565e88a5ead
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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SBR2045CT-G SBR2045.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
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DMT10H010SPS-13 DMT10H010SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.6A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH6010SPS-13 DMTH6010SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 400A
Drain current: 10.4A
Gate charge: 38.1nC
On-state resistance: 8mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPS-13 DMTH10H010SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPSQ-13 DMTH10H010SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Application: automotive industry
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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74LVC2G126HD4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109D54D460D3&compId=74LVC2G126.pdf?ci_sign=4161d9d2ba6e3a33ab5b574c9490c45adcf792b2
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMNH45M7SCT
DMNH45M7SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+145.09 грн
50+81.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMNH6008SCT DMNH6008SCT.pdf
DMNH6008SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+205.91 грн
10+102.46 грн
50+79.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMBJ78A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ78A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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