Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74460) > Сторінка 1236 з 1241

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DMP3036SSS-13 DMP3036SSS-13 DIODES INCORPORATED DMP3036SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16.2A; 1.4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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LM4040D25FTA LM4040D25FTA DIODES INCORPORATED LM4040.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
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LM4040D25QFTA LM4040D25QFTA DIODES INCORPORATED Category: Reference voltage sources - circuits
Description: IC: voltage reference source; SOT23
Type of integrated circuit: voltage reference source
Case: SOT23
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+18.22 грн
Мінімальне замовлення: 3000 шт
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APX803S-40SA-7 APX803S-40SA-7 DIODES INCORPORATED APX803S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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APX803L20-18SA-7 APX803L20-18SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.8V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
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APX803S-44SA-7 APX803S-44SA-7 DIODES INCORPORATED APX803S.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
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PDS760-13 PDS760-13 DIODES INCORPORATED PDS760.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 60V; 7A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 275A
Kind of package: reel; tape
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MMSZ5246B-7-F MMSZ5246B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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DMN2024U-7 DMN2024U-7 DIODES INCORPORATED DMN2024U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DDTC123JE-7-F DIODES INCORPORATED ds30314.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
Frequency: 250MHz
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BC856AS-7 BC856AS-7 DIODES INCORPORATED BC856AS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC856AW-7-F BC856AW-7-F DIODES INCORPORATED BC856AW-BC858CW.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC856AQ-7-F BC856AQ-7-F DIODES INCORPORATED bc856_7_8.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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BC856ASQ-7-F BC856ASQ-7-F DIODES INCORPORATED BC856ASQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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AP2115M-3.3TRG1 AP2115M-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5-1.2TRG1 AP2115R5-1.2TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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 Мінімальне замовлення: 1000 шт
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AP2115R5-2.5TRG1 AP2115R5-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-2.5TRG1 AP2115R5A-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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 Мінімальне замовлення: 1000 шт
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SMCJ170A-13-F SMCJ170A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1439 шт:
термін постачання 14-30 дні (днів)
18+25.77 грн
22+19.48 грн
70+13.62 грн
191+12.87 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
APX321SEG-7 DIODES INCORPORATED APX321_358.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; Uoper: 2.5÷5.5V; SC70-5
Input offset voltage: 7mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.25µA
Kind of package: reel; tape
Case: SC70-5
Number of channels: 1
Operating voltage: 2.5...5.5V
Bandwidth: 1MHz
Mounting: SMT
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 Мінімальне замовлення: 3000 шт
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FZT1149ATA FZT1149ATA DIODES INCORPORATED FZT1149A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 4A; 3W; SOT223
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 25V
Power dissipation: 3W
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 50...800
Kind of package: reel; tape
Case: SOT223
Frequency: 135MHz
Collector current: 4A
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BAV99DWQ-7-F BAV99DWQ-7-F DIODES INCORPORATED BAV99DWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Case: SOT363
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 75V
Load current: 0.215A
Kind of package: reel; tape
Semiconductor structure: double series x2
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 4ns
на замовлення 114 шт:
термін постачання 14-30 дні (днів)
18+25.77 грн
26+16.09 грн
32+13.04 грн
50+11.06 грн
100+9.57 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
DXT651-13 DXT651-13 DIODES INCORPORATED ds31184.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
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DXT651Q-13 DXT651Q-13 DIODES INCORPORATED DXT651Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
Application: automotive industry
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DMP2160UFDBQ-7 DIODES INCORPORATED DMP2160UFDBQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Mounting: SMD
Gate charge: 6.5nC
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 86mΩ
Pulsed drain current: -13A
Power dissipation: 1.4W
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DMG6601LVT-7 DMG6601LVT-7 DIODES INCORPORATED DMG6601LVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DDZX10C-7 DDZX10C-7 DIODES INCORPORATED ds30408.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Tolerance: ±2.5%
Mounting: SMD
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 10V
Type of diode: Zener
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ZXMN2F34FHTA ZXMN2F34FHTA DIODES INCORPORATED ZXMN2F34FH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.9A; 0.95W; SOT23
Mounting: SMD
Power dissipation: 0.95W
Polarisation: unipolar
Drain current: 2.9A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.12Ω
на замовлення 626 шт:
термін постачання 14-30 дні (днів)
12+37.33 грн
18+23.44 грн
25+20.30 грн
50+18.40 грн
100+16.67 грн
500+13.20 грн
Мінімальне замовлення: 12 шт
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SBR0240LP-7 SBR0240LP-7 DIODES INCORPORATED SBR0240LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SBR®; SMD; 40V; 0.25A
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Max. forward impulse current: 5A
Technology: SBR®
на замовлення 129 шт:
термін постачання 14-30 дні (днів)
24+18.66 грн
28+15.19 грн
30+13.86 грн
100+10.56 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
SMAJ9.0A-13-F SMAJ9.0A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2399 шт:
термін постачання 14-30 дні (днів)
30+15.11 грн
38+10.89 грн
42+9.90 грн
100+7.60 грн
500+6.61 грн
1000+5.87 грн
Мінімальне замовлення: 30 шт
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SMAJ90CA-13-F SMAJ90CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT3020LSDQ-13 DMT3020LSDQ-13 DIODES INCORPORATED DMT3020LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.5W
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 Мінімальне замовлення: 2500 шт
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DMT3020LFDB-7 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Power dissipation: 1.8W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Gate charge: 7nC
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 Мінімальне замовлення: 3000 шт
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DMT3020LDV-7 DIODES INCORPORATED DMT3020LDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.9W
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DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
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DMT3006LFDFQ-7 DIODES INCORPORATED DMT3006LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
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В кошику  од. на суму  грн.
DMT3006LFG-7 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
товару немає в наявності
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DMT3006LFV-13 DIODES INCORPORATED DMT3006LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
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 Мінімальне замовлення: 3000 шт
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DMT3020LFDFQ-7 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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DMT3003LFG-13 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
товару немає в наявності
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DMT3003LFG-7 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
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DMT3003LFGQ-7 DIODES INCORPORATED DMT3003LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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DMT3004LPS-13 DIODES INCORPORATED DMT3004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 2.7W
товару немає в наявності
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DMT3006LFDF-7 DIODES INCORPORATED DMT3006LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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DMT3006LFG-13 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3006LFVQ-13 DIODES INCORPORATED DMT3006LFVQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
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 Мінімальне замовлення: 3000 шт
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DMT3006LPB-13 DIODES INCORPORATED DMT3006LPB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 80...100A
Power dissipation: 1.7W
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 Мінімальне замовлення: 2500 шт
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DMT3008LFDF-7 DIODES INCORPORATED DMT3008LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 2.1W
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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DMT3020LFDB-13 DIODES INCORPORATED DMT3020LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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DMT3020LFDBQ-13 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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DMT3020LFDF-7 DIODES INCORPORATED DMT3020LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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DMT3020LFDFQ-13 DIODES INCORPORATED DMT3020LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 0.4W
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DMT3020UFDB-13 DIODES INCORPORATED DMT3020UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 35A
Power dissipation: 1.3W
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 Мінімальне замовлення: 10000 шт
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DMT30M9LPS-13 DIODES INCORPORATED DMT30M9LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 2.6W
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 Мінімальне замовлення: 2500 шт
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ZXTP2009ZQTA ZXTP2009ZQTA DIODES INCORPORATED ZXTP2009ZQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Application: automotive industry
Manufacturer standard package: 1000pcs.
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ZXTP2009ZTA ZXTP2009ZTA DIODES INCORPORATED ZXTP2009Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
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ZX5T3ZTA ZX5T3ZTA DIODES INCORPORATED ZX5T3Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
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ZXTP2012ZTA ZXTP2012ZTA DIODES INCORPORATED zxtp2012z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
на замовлення 979 шт:
термін постачання 14-30 дні (днів)
6+86.21 грн
10+50.01 грн
25+41.02 грн
50+35.73 грн
100+31.44 грн
125+30.29 грн
200+28.06 грн
250+27.07 грн
500+26.41 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
ZXTP2012ZQTA ZXTP2012ZQTA DIODES INCORPORATED ZXTP2012Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 2.1W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
Application: automotive industry
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ZXTP2008ZTA ZXTP2008ZTA DIODES INCORPORATED ZXTP2008Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Manufacturer standard package: 1000pcs.
на замовлення 164 шт:
термін постачання 14-30 дні (днів)
4+115.54 грн
10+62.72 грн
50+49.68 грн
100+44.32 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMP3036SSS-13 DMP3036SSS.pdf
DMP3036SSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16.2A; 1.4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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LM4040D25FTA LM4040.pdf
LM4040D25FTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
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LM4040D25QFTA
LM4040D25QFTA
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; SOT23
Type of integrated circuit: voltage reference source
Case: SOT23
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3000+18.22 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
APX803S-40SA-7 APX803S.pdf
APX803S-40SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
товару немає в наявності
Мінімальне замовлення: 3000 шт
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APX803L20-18SA-7 APX803L.pdf
APX803L20-18SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.8V
Kind of package: reel; tape
Number of channels: 1
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
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Мінімальне замовлення: 3000 шт
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APX803S-44SA-7 APX803S.pdf
APX803S-44SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 10µA
Maximum output current: 20mA
Threshold on-voltage: 4.38V
Kind of package: reel; tape
Number of channels: 1
Delay time: 240ms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PDS760-13 PDS760.pdf
PDS760-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 60V; 7A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 275A
Kind of package: reel; tape
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MMSZ5246B-7-F mmsz52xxb_Ser.pdf
MMSZ5246B-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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DMN2024U-7 DMN2024U.pdf
DMN2024U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Pulsed drain current: 45A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DDTC123JE-7-F ds30314.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80
Frequency: 250MHz
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BC856AS-7 BC856AS.pdf
BC856AS-7
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC856AW-7-F BC856AW-BC858CW.pdf
BC856AW-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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BC856AQ-7-F bc856_7_8.pdf
BC856AQ-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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BC856ASQ-7-F BC856ASQ.pdf
BC856ASQ-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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AP2115M-3.3TRG1 AP2115.pdf
AP2115M-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
AP2115R5-1.2TRG1 AP2115.pdf
AP2115R5-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AP2115R5-2.5TRG1 AP2115.pdf
AP2115R5-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AP2115R5A-2.5TRG1 AP2115.pdf
AP2115R5A-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SMCJ170A-13-F SMCJ_ser.pdf
SMCJ170A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1439 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+25.77 грн
22+19.48 грн
70+13.62 грн
191+12.87 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
APX321SEG-7 APX321_358.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; Uoper: 2.5÷5.5V; SC70-5
Input offset voltage: 7mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.25µA
Kind of package: reel; tape
Case: SC70-5
Number of channels: 1
Operating voltage: 2.5...5.5V
Bandwidth: 1MHz
Mounting: SMT
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FZT1149ATA FZT1149A.pdf
FZT1149ATA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 4A; 3W; SOT223
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 25V
Power dissipation: 3W
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 50...800
Kind of package: reel; tape
Case: SOT223
Frequency: 135MHz
Collector current: 4A
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В кошику  од. на суму  грн.
BAV99DWQ-7-F BAV99DWQ.pdf
BAV99DWQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Case: SOT363
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 75V
Load current: 0.215A
Kind of package: reel; tape
Semiconductor structure: double series x2
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 4ns
на замовлення 114 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+25.77 грн
26+16.09 грн
32+13.04 грн
50+11.06 грн
100+9.57 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
DXT651-13 ds31184.pdf
DXT651-13
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
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DXT651Q-13 DXT651Q.pdf
DXT651Q-13
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Pulsed collector current: 6A
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 140...200MHz
Manufacturer standard package: 2500pcs.
Application: automotive industry
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DMP2160UFDBQ-7 DMP2160UFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Mounting: SMD
Gate charge: 6.5nC
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 86mΩ
Pulsed drain current: -13A
Power dissipation: 1.4W
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В кошику  од. на суму  грн.
DMG6601LVT-7 DMG6601LVT-7.pdf
DMG6601LVT-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DDZX10C-7 ds30408.pdf
DDZX10C-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Tolerance: ±2.5%
Mounting: SMD
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 10V
Type of diode: Zener
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ZXMN2F34FHTA ZXMN2F34FH.pdf
ZXMN2F34FHTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.9A; 0.95W; SOT23
Mounting: SMD
Power dissipation: 0.95W
Polarisation: unipolar
Drain current: 2.9A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.12Ω
на замовлення 626 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+37.33 грн
18+23.44 грн
25+20.30 грн
50+18.40 грн
100+16.67 грн
500+13.20 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
SBR0240LP-7 SBR0240LP.pdf
SBR0240LP-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SBR®; SMD; 40V; 0.25A
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Max. forward impulse current: 5A
Technology: SBR®
на замовлення 129 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
24+18.66 грн
28+15.19 грн
30+13.86 грн
100+10.56 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
SMAJ9.0A-13-F SMAJ_ser.pdf
SMAJ9.0A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2399 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.11 грн
38+10.89 грн
42+9.90 грн
100+7.60 грн
500+6.61 грн
1000+5.87 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMAJ90CA-13-F SMAJ_ser.pdf
SMAJ90CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT3020LSDQ-13 DMT3020LSDQ.pdf
DMT3020LSDQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.5W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMT3020LFDB-7 DMT3020LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Power dissipation: 1.8W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Gate charge: 7nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3020LDV-7 DMT3020LDV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.9W
товару немає в наявності
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DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3006LFDFQ-7 DMT3006LFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
товару немає в наявності
В кошику  од. на суму  грн.
DMT3006LFG-7 DMT3006LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DMT3006LFV-13 DMT3006LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3020LFDFQ-7 DMT3020LFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3003LFG-13 DMT3003LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3003LFG-7 DMT3003LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DMT3003LFGQ-7 DMT3003LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 5.5mΩ
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 2.4W
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DMT3004LPS-13 DMT3004LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Gate charge: 43.7nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 6mΩ
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 2.7W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMT3006LFDF-7 DMT3006LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 15mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3006LFG-13 DMT3006LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 10mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 27.8W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3006LFVQ-13 DMT3006LFVQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3006LPB-13 DMT3006LPB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 9/11A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 80...100A
Power dissipation: 1.7W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DMT3008LFDF-7 DMT3008LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6
Gate charge: 5.8nC
Polarisation: unipolar
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Case: DFN2020-6
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 2.1W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3020LFDB-13 DMT3020LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMT3020LFDBQ-13 DMT3020LFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 32mΩ
Mounting: SMD
Pulsed drain current: 50A
Power dissipation: 1.8W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMT3020LFDF-7 DMT3020LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 1.1W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMT3020LFDFQ-13 DMT3020LFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 28mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 0.4W
товару немає в наявності
В кошику  од. на суму  грн.
DMT3020UFDB-13 DMT3020UFDB.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 35A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
DMT30M9LPS-13 DMT30M9LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Gate charge: 160.5nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 1.6mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 2.6W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ZXTP2009ZQTA ZXTP2009ZQ.pdf
ZXTP2009ZQTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Application: automotive industry
Manufacturer standard package: 1000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
ZXTP2009ZTA ZXTP2009Z.pdf
ZXTP2009ZTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
ZX5T3ZTA ZX5T3Z.pdf
ZX5T3ZTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 152MHz
Manufacturer standard package: 1000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
ZXTP2012ZTA zxtp2012z.pdf
ZXTP2012ZTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
на замовлення 979 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+86.21 грн
10+50.01 грн
25+41.02 грн
50+35.73 грн
100+31.44 грн
125+30.29 грн
200+28.06 грн
250+27.07 грн
500+26.41 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
ZXTP2012ZQTA ZXTP2012Z.pdf
ZXTP2012ZQTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 2.1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 2.1W
Case: SOT89
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
ZXTP2008ZTA ZXTP2008Z.pdf
ZXTP2008ZTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Manufacturer standard package: 1000pcs.
на замовлення 164 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+115.54 грн
10+62.72 грн
50+49.68 грн
100+44.32 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.