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SBR30A60CTBQ-13 DIODES INCORPORATED SBR30A60CTBQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SBR®; SMD; 60V; 30A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Load current: 30A
Max. off-state voltage: 60V
Max. forward impulse current: 180A
Type of diode: Schottky rectifying
Technology: SBR®
Semiconductor structure: common cathode; double
Leakage current: 110µA
Max. forward voltage: 0.63V
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SBR30A60CTFP DIODES INCORPORATED SBR30A60.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 60V
Type of diode: rectifying
Technology: SBR®
Semiconductor structure: common cathode; double
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AP7330-W5-7 AP7330-W5-7 DIODES INCORPORATED AP7330.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7330
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.8...5.5V
Integrated circuit features: shutdown mode control input
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)
23+18.76 грн
28+14.41 грн
32+12.75 грн
37+10.85 грн
100+8.79 грн
160+5.86 грн
438+5.54 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
AP7330D-W5-7 AP7330D-W5-7 DIODES INCORPORATED AP7330.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7330
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.8...5.5V
Integrated circuit features: output discharge; shutdown mode control input
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
22+19.61 грн
28+14.57 грн
31+12.98 грн
36+11.08 грн
100+9.10 грн
154+6.10 грн
423+5.70 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BCP5516TA BCP5516TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)
13+34.10 грн
18+22.72 грн
50+15.44 грн
100+12.98 грн
184+5.07 грн
506+4.75 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BC56-16PA-7 DIODES INCORPORATED BC56_16PA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Mounting: SMD
Collector current: 1A
Power dissipation: 0.52W
Pulsed collector current: 2A
Current gain: 25...250
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 125MHz
Polarisation: bipolar
Kind of package: reel; tape
Case: U-DFN2020-3
Type of transistor: NPN
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FMMT449TA DIODES INCORPORATED FMMT449.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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ZXMN6A07ZTA ZXMN6A07ZTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC12378413F8BF&compId=ZXMN6A07Z.pdf?ci_sign=c2f297b8135902cad3099ce4cf4f0735c2a3ab9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 682 шт:
термін постачання 21-30 дні (днів)
9+49.45 грн
12+33.81 грн
44+21.38 грн
120+20.19 грн
500+19.40 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AP2553W6-7 AP2553W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
на замовлення 713 шт:
термін постачання 21-30 дні (днів)
18+24.73 грн
50+15.91 грн
75+14.73 грн
86+10.85 грн
237+10.21 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
ZXMN2B01FTA ZXMN2B01FTA DIODES INCORPORATED ZXMN2B01F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; Idm: 11.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.8A
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)
11+40.07 грн
18+22.72 грн
71+13.14 грн
195+12.43 грн
500+11.95 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
1N5819HW1-7-F DIODES INCORPORATED 1N5819HW1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.51V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 30pF
Technology: SBR®
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SBR05M100BLP-7 SBR05M100BLP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D24BE2293E0CE&compId=SBR05M100BLP.pdf?ci_sign=4e4101d7113bb5a89b2fb5618c99ae5041663677 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 0.5A; Ifsm: 8A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.5A
Max. forward impulse current: 8A
Case: U-DFN3030-4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.73V
Technology: SBR®
на замовлення 1430 шт:
термін постачання 21-30 дні (днів)
11+40.07 грн
12+34.52 грн
13+32.62 грн
44+21.53 грн
119+20.35 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
2DB1132R-13 DIODES INCORPORATED 2DB1132P_Q_R.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 1A; 2W; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 2W
Pulsed collector current: 2A
Collector-emitter voltage: 32V
Current gain: 82...390
Quantity in set/package: 2500pcs.
Frequency: 190MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
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2DB1184Q-13 DIODES INCORPORATED ds31504.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 4.5A
Quantity in set/package: 2500pcs.
Application: automotive industry
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2DB1182Q-13 DIODES INCORPORATED 2DB1182Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 3A
Quantity in set/package: 2500pcs.
Application: automotive industry
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2DB1188Q-13 DIODES INCORPORATED 2DB1188P_Q_R.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 1W; SOT89; automotive industry
Mounting: SMD
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1W
Pulsed collector current: 3A
Collector-emitter voltage: 32V
Current gain: 120...270
Quantity in set/package: 2500pcs.
Frequency: 120MHz
Application: automotive industry
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
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2DB1188R-13 DIODES INCORPORATED 2DB1188P_Q_R.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1W
Pulsed collector current: 3A
Collector-emitter voltage: 32V
Current gain: 180...390
Quantity in set/package: 2500pcs.
Frequency: 120MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
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DMP3085LSS-13 DMP3085LSS-13 DIODES INCORPORATED DMP3085LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -20A; 1W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -4.2A
Gate charge: 11nC
On-state resistance: 95mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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ZVN4206AVSTZ ZVN4206AVSTZ DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB3A98EB5718BF&compId=ZVN4206AV.pdf?ci_sign=13b152030765fe7df735f7919c3d9adf404214ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Pulsed drain current: 8A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
7+67.36 грн
10+42.28 грн
39+23.91 грн
107+22.64 грн
1000+21.77 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AP3417CKTR-G1 AP3417CKTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AC0D08ADC9BE28&compId=AP3417x-DTE.pdf?ci_sign=8cc1e2c4ae1220fbc6bfe44b2bd15a4f249649c6 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.4V DC
Output current: 1A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 94%
на замовлення 804 шт:
термін постачання 21-30 дні (днів)
28+15.60 грн
33+12.03 грн
100+9.50 грн
277+8.71 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DDTA123JCA-7-F DDTA123JCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 1151 шт:
термін постачання 21-30 дні (днів)
36+11.94 грн
50+7.92 грн
100+4.09 грн
500+2.68 грн
696+1.34 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP393SG-13 AP393SG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3D63FB34F9E28&compId=AP393.pdf?ci_sign=260d9eb5b38553a1f873357a600eb9c17b22a722 Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; Iio: 180nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 180nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Input bias current: 0.5µA
на замовлення 1566 шт:
термін постачання 21-30 дні (днів)
95+4.52 грн
Мінімальне замовлення: 95
В кошику  од. на суму  грн.
AP331AWRG-7 AP331AWRG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3BEA7BF8B9E28&compId=AP331A.pdf?ci_sign=8466d65f4958ff572e7f6f446a9283897cf979f5 Category: SMD comparators
Description: IC: comparator; precision; Cmp: 1; SMT; SOT25R; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 1
Mounting: SMT
Case: SOT25R
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 598 шт:
термін постачання 21-30 дні (днів)
30+14.49 грн
38+10.61 грн
50+8.47 грн
100+7.52 грн
140+6.65 грн
385+6.25 грн
500+6.10 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
AS393AMTR-G1 AS393AMTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3F447ACF97E28&compId=AS393x.pdf?ci_sign=bba55b337ec09780594fa5b8568d6b34774d544b Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 1312 шт:
термін постачання 21-30 дні (днів)
19+23.02 грн
29+13.78 грн
35+11.56 грн
100+8.55 грн
154+6.10 грн
423+5.70 грн
500+5.62 грн
1000+5.54 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
ZTX601B DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601BSTZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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74AHC00S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B48B1DFA0D3&compId=74AHC00.pdf?ci_sign=d266a7921e08f0d90a7cfcfdfb1ad71c5c6191f3 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
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74AHC00T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B44F4B740D3&compId=74AHC00.pdf?ci_sign=fe6af730f72a622284f511f64269e2e79aa8ea2f Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
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ZTX601 DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601STZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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DMT4004LPS-13 DIODES INCORPORATED DMT4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
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DMTH4004LK3-13 DIODES INCORPORATED DMTH4004LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 180W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 180W
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 83nC
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of channel: enhancement
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DMTH4004LPS-13 DIODES INCORPORATED DMTH4004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
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DMTH4004SPS-13 DIODES INCORPORATED DMTH4004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 26A
Pulsed drain current: 350A
Power dissipation: 3.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH4004LK3Q-13 DIODES INCORPORATED DMTH4004LK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.9W
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 83nC
On-state resistance: 5mΩ
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 200A
Application: automotive industry
Kind of channel: enhancement
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DMTH4004LPSQ-13 DIODES INCORPORATED DMTH4004LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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DMTH4004SPSQ-13 DIODES INCORPORATED DMTH4004SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Application: automotive industry
Kind of channel: enhancement
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DFLS240L-7 DFLS240L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E75403E7FBC143&compId=DFLS240L.pdf?ci_sign=4d4aa0af18f85d6420295ea5489e36253b69080b Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 90pF
Max. forward voltage: 0.5V
Power dissipation: 556mW
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
на замовлення 14775 шт:
термін постачання 21-30 дні (днів)
12+36.66 грн
17+24.23 грн
18+22.01 грн
85+11.00 грн
233+10.37 грн
3000+9.98 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
PAM8965ZLA40-13 DIODES INCORPORATED PAM8965.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 12W; stereo; Ch: 2; Amp.class: D; TQFN40
Type of integrated circuit: audio amplifier
Output power: 12W
Integrated circuit features: stereo
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: TQFN40
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.8...8.5V DC
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DSS4240T-7 DIODES INCORPORATED ds31623.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 730mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.73W
Collector current: 2A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 150...350
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
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DSS4240V-7 DIODES INCORPORATED ds31672.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 2A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
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DSS4240Y-7 DIODES INCORPORATED ds31682.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 625mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.625W
Collector current: 2A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 150...350
Quantity in set/package: 3000pcs.
Frequency: 100...250MHz
Polarisation: bipolar
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74LVC2G08HD4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CFEB3E0D3&compId=74LVC2G08.pdf?ci_sign=f4d95a384f619213760aa0043456f361ad532b19 Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Case: X2-DFN2010-8
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Technology: CMOS
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74LVC2G08HK3-7 DIODES INCORPORATED 74LVC2G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 4
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Case: X2-DFN1410-8
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Technology: CMOS
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74LVC2G08RA3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CFEB4E0D3&compId=74LVC2G08.pdf?ci_sign=7470f2753b20d8df60c3b348835c760029a62b51 Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Case: X2-DFN1210-8
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Technology: CMOS
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US2JDF-13 DIODES INCORPORATED US2JDF.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+8.01 грн
Мінімальне замовлення: 10000
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US2JDFQ-13 DIODES INCORPORATED US2JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+7.16 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMG1013UW-7 DMG1013UW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA2CDA91012748&compId=DMG1013UW.pdf?ci_sign=534d758ede991a77be3b17dc34fc68085a8dcd9f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 10886 шт:
термін постачання 21-30 дні (днів)
25+17.05 грн
40+9.90 грн
59+6.78 грн
100+5.80 грн
302+3.07 грн
830+2.91 грн
6000+2.81 грн
9000+2.80 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
DMG1012UW-7 DMG1012UW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BB0CD02B24A11C&compId=DMG1012UW-dte.pdf?ci_sign=399be166625f6e6276fd3e6712d9ea042419d58c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.29W
On-state resistance: 0.3Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 3113 шт:
термін постачання 21-30 дні (днів)
30+14.49 грн
38+10.45 грн
48+8.31 грн
55+7.28 грн
84+4.73 грн
103+3.86 грн
356+2.61 грн
978+2.47 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DMG1013T-7 DMG1013T-7 DIODES INCORPORATED ds31784.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -0.33A
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 2840 шт:
термін постачання 21-30 дні (днів)
32+13.64 грн
52+7.76 грн
66+6.02 грн
112+3.55 грн
128+3.11 грн
362+2.57 грн
994+2.43 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DMG1013UWQ-7 DMG1013UWQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986DF3818A738D8BF&compId=DMG1013UWQ.pdf?ci_sign=a1598430a3b580a601abe82e52e1bd1c14ee1584 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Application: automotive industry
на замовлення 2274 шт:
термін постачання 21-30 дні (днів)
25+17.05 грн
34+11.72 грн
50+8.36 грн
100+7.18 грн
237+3.92 грн
651+3.71 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
ZX5T3ZTA DIODES INCORPORATED ZX5T3Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 152MHz
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SMCJ6.5A-13-F SMCJ6.5A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 133.9A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 133.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
15+28.99 грн
17+23.91 грн
18+22.64 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SMCJ64A-13-F SMCJ64A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ64AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Diodes - Unclassified
Description: SMCJ64AQ-13-F
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+19.87 грн
Мінімальне замовлення: 3000
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GBJ1006-F DIODES INCORPORATED ds21218.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 170A
Case: GBJ
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward voltage: 1.05V
Max. forward impulse current: 170A
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
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AL5811FF-7 DIODES INCORPORATED AL5811.pdf Category: LED drivers
Description: IC: driver; LED driver; U-DFN3030-6; 75mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Output current: 75mA
Case: U-DFN3030-6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 2...60V DC
Kind of integrated circuit: LED driver
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ZXTR2012FF-7 DIODES INCORPORATED ZXTR2012FF.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.036A; SOT23F; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.036A
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...100V
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ZXTR2105FF-7 DIODES INCORPORATED ZXTR2105FF.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT23F; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...60V
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B250AF-13 DIODES INCORPORATED B250AF-B260AF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 15mA
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Capacitance: 80pF
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SBR30A60CTBQ-13 SBR30A60CTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SBR®; SMD; 60V; 30A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Load current: 30A
Max. off-state voltage: 60V
Max. forward impulse current: 180A
Type of diode: Schottky rectifying
Technology: SBR®
Semiconductor structure: common cathode; double
Leakage current: 110µA
Max. forward voltage: 0.63V
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SBR30A60CTFP SBR30A60.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; ITO220AB; SBR®
Case: ITO220AB
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 60V
Type of diode: rectifying
Technology: SBR®
Semiconductor structure: common cathode; double
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AP7330-W5-7 AP7330.pdf
AP7330-W5-7
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7330
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.8...5.5V
Integrated circuit features: shutdown mode control input
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.76 грн
28+14.41 грн
32+12.75 грн
37+10.85 грн
100+8.79 грн
160+5.86 грн
438+5.54 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
AP7330D-W5-7 AP7330.pdf
AP7330D-W5-7
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7330
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.8...5.5V
Integrated circuit features: output discharge; shutdown mode control input
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+19.61 грн
28+14.57 грн
31+12.98 грн
36+11.08 грн
100+9.10 грн
154+6.10 грн
423+5.70 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BCP5516TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP5516TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.10 грн
18+22.72 грн
50+15.44 грн
100+12.98 грн
184+5.07 грн
506+4.75 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BC56-16PA-7 BC56_16PA.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Mounting: SMD
Collector current: 1A
Power dissipation: 0.52W
Pulsed collector current: 2A
Current gain: 25...250
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 125MHz
Polarisation: bipolar
Kind of package: reel; tape
Case: U-DFN2020-3
Type of transistor: NPN
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FMMT449TA FMMT449.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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ZXMN6A07ZTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC12378413F8BF&compId=ZXMN6A07Z.pdf?ci_sign=c2f297b8135902cad3099ce4cf4f0735c2a3ab9c
ZXMN6A07ZTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 682 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.45 грн
12+33.81 грн
44+21.38 грн
120+20.19 грн
500+19.40 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AP2553W6-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229
AP2553W6-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
на замовлення 713 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.73 грн
50+15.91 грн
75+14.73 грн
86+10.85 грн
237+10.21 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
ZXMN2B01FTA ZXMN2B01F.pdf
ZXMN2B01FTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; Idm: 11.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.8A
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.07 грн
18+22.72 грн
71+13.14 грн
195+12.43 грн
500+11.95 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
1N5819HW1-7-F 1N5819HW1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.51V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 30pF
Technology: SBR®
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SBR05M100BLP-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D24BE2293E0CE&compId=SBR05M100BLP.pdf?ci_sign=4e4101d7113bb5a89b2fb5618c99ae5041663677
SBR05M100BLP-7
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 0.5A; Ifsm: 8A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.5A
Max. forward impulse current: 8A
Case: U-DFN3030-4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.73V
Technology: SBR®
на замовлення 1430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.07 грн
12+34.52 грн
13+32.62 грн
44+21.53 грн
119+20.35 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
2DB1132R-13 2DB1132P_Q_R.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 1A; 2W; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 2W
Pulsed collector current: 2A
Collector-emitter voltage: 32V
Current gain: 82...390
Quantity in set/package: 2500pcs.
Frequency: 190MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
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2DB1184Q-13 ds31504.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 4.5A
Quantity in set/package: 2500pcs.
Application: automotive industry
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2DB1182Q-13 2DB1182Q.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 3A
Quantity in set/package: 2500pcs.
Application: automotive industry
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2DB1188Q-13 2DB1188P_Q_R.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 1W; SOT89; automotive industry
Mounting: SMD
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1W
Pulsed collector current: 3A
Collector-emitter voltage: 32V
Current gain: 120...270
Quantity in set/package: 2500pcs.
Frequency: 120MHz
Application: automotive industry
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
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2DB1188R-13 2DB1188P_Q_R.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1W
Pulsed collector current: 3A
Collector-emitter voltage: 32V
Current gain: 180...390
Quantity in set/package: 2500pcs.
Frequency: 120MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
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DMP3085LSS-13 DMP3085LSS.pdf
DMP3085LSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -20A; 1W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -4.2A
Gate charge: 11nC
On-state resistance: 95mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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ZVN4206AVSTZ pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB3A98EB5718BF&compId=ZVN4206AV.pdf?ci_sign=13b152030765fe7df735f7919c3d9adf404214ce
ZVN4206AVSTZ
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Pulsed drain current: 8A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.36 грн
10+42.28 грн
39+23.91 грн
107+22.64 грн
1000+21.77 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AP3417CKTR-G1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AC0D08ADC9BE28&compId=AP3417x-DTE.pdf?ci_sign=8cc1e2c4ae1220fbc6bfe44b2bd15a4f249649c6
AP3417CKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.4VDC; 1A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.4V DC
Output current: 1A
Case: SOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 94%
на замовлення 804 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.60 грн
33+12.03 грн
100+9.50 грн
277+8.71 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DDTA123JCA-7-F ds30334.pdf
DDTA123JCA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 1151 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.94 грн
50+7.92 грн
100+4.09 грн
500+2.68 грн
696+1.34 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AP393SG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3D63FB34F9E28&compId=AP393.pdf?ci_sign=260d9eb5b38553a1f873357a600eb9c17b22a722
AP393SG-13
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; Iio: 180nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 180nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Input bias current: 0.5µA
на замовлення 1566 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
95+4.52 грн
Мінімальне замовлення: 95
В кошику  од. на суму  грн.
AP331AWRG-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3BEA7BF8B9E28&compId=AP331A.pdf?ci_sign=8466d65f4958ff572e7f6f446a9283897cf979f5
AP331AWRG-7
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 1; SMT; SOT25R; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 1
Mounting: SMT
Case: SOT25R
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 598 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.49 грн
38+10.61 грн
50+8.47 грн
100+7.52 грн
140+6.65 грн
385+6.25 грн
500+6.10 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
AS393AMTR-G1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3F447ACF97E28&compId=AS393x.pdf?ci_sign=bba55b337ec09780594fa5b8568d6b34774d544b
AS393AMTR-G1
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 1312 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+23.02 грн
29+13.78 грн
35+11.56 грн
100+8.55 грн
154+6.10 грн
423+5.70 грн
500+5.62 грн
1000+5.54 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
ZTX601B ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601BSTZ ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 5000...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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74AHC00S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B48B1DFA0D3&compId=74AHC00.pdf?ci_sign=d266a7921e08f0d90a7cfcfdfb1ad71c5c6191f3
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
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В кошику  од. на суму  грн.
74AHC00T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B44F4B740D3&compId=74AHC00.pdf?ci_sign=fe6af730f72a622284f511f64269e2e79aa8ea2f
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
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ZTX601 ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX601STZ ZTX600.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 1000...20000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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DMT4004LPS-13 DMT4004LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
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DMTH4004LK3-13 DMTH4004LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 180W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 180W
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 83nC
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of channel: enhancement
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DMTH4004LPS-13 DMTH4004LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Kind of channel: enhancement
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DMTH4004SPS-13 DMTH4004SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 26A
Pulsed drain current: 350A
Power dissipation: 3.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH4004LK3Q-13 DMTH4004LK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.9W
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 83nC
On-state resistance: 5mΩ
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Pulsed drain current: 200A
Application: automotive industry
Kind of channel: enhancement
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DMTH4004LPSQ-13 DMTH4004LPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 82.2nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 40V
Pulsed drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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DMTH4004SPSQ-13 DMTH4004SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Case: PowerDI5060-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Gate charge: 68.6nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain current: 26A
Drain-source voltage: 40V
Pulsed drain current: 350A
Application: automotive industry
Kind of channel: enhancement
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DFLS240L-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E75403E7FBC143&compId=DFLS240L.pdf?ci_sign=4d4aa0af18f85d6420295ea5489e36253b69080b
DFLS240L-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 2A; reel,tape
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 90pF
Max. forward voltage: 0.5V
Power dissipation: 556mW
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
на замовлення 14775 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.66 грн
17+24.23 грн
18+22.01 грн
85+11.00 грн
233+10.37 грн
3000+9.98 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
PAM8965ZLA40-13 PAM8965.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 12W; stereo; Ch: 2; Amp.class: D; TQFN40
Type of integrated circuit: audio amplifier
Output power: 12W
Integrated circuit features: stereo
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: TQFN40
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.8...8.5V DC
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DSS4240T-7 ds31623.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 730mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.73W
Collector current: 2A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 150...350
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Polarisation: bipolar
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DSS4240V-7 ds31672.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 2A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Polarisation: bipolar
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DSS4240Y-7 ds31682.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 625mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.625W
Collector current: 2A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 150...350
Quantity in set/package: 3000pcs.
Frequency: 100...250MHz
Polarisation: bipolar
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74LVC2G08HD4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CFEB3E0D3&compId=74LVC2G08.pdf?ci_sign=f4d95a384f619213760aa0043456f361ad532b19
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Case: X2-DFN2010-8
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Technology: CMOS
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74LVC2G08HK3-7 74LVC2G08.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 4
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Case: X2-DFN1410-8
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Technology: CMOS
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74LVC2G08RA3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CFEB4E0D3&compId=74LVC2G08.pdf?ci_sign=7470f2753b20d8df60c3b348835c760029a62b51
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Case: X2-DFN1210-8
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Technology: CMOS
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US2JDF-13 US2JDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+8.01 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
US2JDFQ-13 US2JDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+7.16 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMG1013UW-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA2CDA91012748&compId=DMG1013UW.pdf?ci_sign=534d758ede991a77be3b17dc34fc68085a8dcd9f
DMG1013UW-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 10886 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.05 грн
40+9.90 грн
59+6.78 грн
100+5.80 грн
302+3.07 грн
830+2.91 грн
6000+2.81 грн
9000+2.80 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
DMG1012UW-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BB0CD02B24A11C&compId=DMG1012UW-dte.pdf?ci_sign=399be166625f6e6276fd3e6712d9ea042419d58c
DMG1012UW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.29W
On-state resistance: 0.3Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 3113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.49 грн
38+10.45 грн
48+8.31 грн
55+7.28 грн
84+4.73 грн
103+3.86 грн
356+2.61 грн
978+2.47 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DMG1013T-7 ds31784.pdf
DMG1013T-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -0.33A
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 2840 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.64 грн
52+7.76 грн
66+6.02 грн
112+3.55 грн
128+3.11 грн
362+2.57 грн
994+2.43 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DMG1013UWQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986DF3818A738D8BF&compId=DMG1013UWQ.pdf?ci_sign=a1598430a3b580a601abe82e52e1bd1c14ee1584
DMG1013UWQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -540mA
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Application: automotive industry
на замовлення 2274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.05 грн
34+11.72 грн
50+8.36 грн
100+7.18 грн
237+3.92 грн
651+3.71 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
ZX5T3ZTA ZX5T3Z.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 152MHz
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SMCJ6.5A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ6.5A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 133.9A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 133.9A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.99 грн
17+23.91 грн
18+22.64 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SMCJ64A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ64A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ64AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Diodes - Unclassified
Description: SMCJ64AQ-13-F
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+19.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
GBJ1006-F ds21218.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 170A
Case: GBJ
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward voltage: 1.05V
Max. forward impulse current: 170A
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Version: flat
Features of semiconductor devices: glass passivated
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AL5811FF-7 AL5811.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; U-DFN3030-6; 75mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Output current: 75mA
Case: U-DFN3030-6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 2...60V DC
Kind of integrated circuit: LED driver
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ZXTR2012FF-7 ZXTR2012FF.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.036A; SOT23F; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.036A
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...100V
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ZXTR2105FF-7 ZXTR2105FF.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.015A; SOT23F; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 15mA
Case: SOT23F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...60V
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B250AF-13 B250AF-B260AF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 15mA
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Capacitance: 80pF
товару немає в наявності
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