Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74185) > Сторінка 1236 з 1237
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| ZTX415STZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.68W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74LVC1G04QSE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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DMG4800LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 30V Drain current: 8.4A On-state resistance: 22mΩ Gate-source voltage: ±25V Kind of channel: enhancement |
на замовлення 2330 шт: термін постачання 21-30 дні (днів) |
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MMDT5451-7-F | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 160/150V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape |
на замовлення 2785 шт: термін постачання 21-30 дні (днів) |
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ZXTD4591E6TA | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 1.1W Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.1W Case: SOT26 Current gain: 100...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 180MHz |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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DMP3056LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: -30V Drain current: -5.1A On-state resistance: 65mΩ Gate-source voltage: ±20V Kind of channel: enhancement |
на замовлення 2367 шт: термін постачання 21-30 дні (днів) |
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BCX38C | DIODES INCORPORATED |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 1W Case: TO92 Current gain: 5000...10000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Pulsed collector current: 2A |
на замовлення 3702 шт: термін постачання 21-30 дні (днів) |
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ZTX614 | DIODES INCORPORATED |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 1W Case: TO92 Current gain: 5000...10000 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk |
на замовлення 3883 шт: термін постачання 21-30 дні (днів) |
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SMBJ26A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1457 шт: термін постачання 21-30 дні (днів) |
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| SMBJ26AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DF08M | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFM Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74AHCT1G32QSE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of input: with Schmitt trigger Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AHCT1G32SE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of input: with Schmitt trigger Kind of output: totem pole |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AHCT1G32W5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of input: with Schmitt trigger Kind of output: totem pole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74AHCT1G32QW5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; IN: 2; SMD; SOT25; -40÷125°C; 1uA; AHCT; OUT: 1 Type of integrated circuit: digital Kind of gate: OR Number of inputs: 2 Mounting: SMD Case: SOT25 Operating temperature: -40...125°C Quiescent current: 1µA Family: AHCT Number of outputs: 1 |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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| 74HCT164T14-13 | DIODES INCORPORATED |
Category: Shift registersDescription: IC: digital; 8bit,shift register,serial input,parallel out Operating temperature: -40...150°C Mounting: SMD Kind of output: push-pull Kind of package: reel; tape Type of integrated circuit: digital Case: TSSOP14 Kind of input: with Schmitt trigger Supply voltage: 4.5...5.5V DC Technology: CMOS; TTL Number of channels: 8 Family: HCT Kind of integrated circuit: 8bit; parallel out; serial input; shift register |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMCJ33AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TT410-13 | DIODES INCORPORATED |
Category: Bridge rectifiers - UnclassifiedDescription: TT410-13 |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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| US1DWFQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT413TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Quantity in set/package: 500pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT415TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Quantity in set/package: 500pcs. Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT416TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Quantity in set/package: 500pcs. Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT411TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.9A Power dissipation: 0.8W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMMT417TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Quantity in set/package: 500pcs. Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZT52C3V0-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 5945 шт: термін постачання 21-30 дні (днів) |
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DMMT2907A-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.28W Case: SOT26 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 307MHz Pulsed collector current: 1A Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DGD2103MS8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74LVC1G57W6-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBTA56Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAZ15-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Zener current: 67mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 3853 шт: термін постачання 21-30 дні (днів) |
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| FES1DEQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Type of diode: rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ28CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 6465 шт: термін постачання 21-30 дні (днів) |
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| SMAJ28CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBRD10100CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Max. forward impulse current: 110A Kind of package: reel; tape Leakage current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBRB10100CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Max. forward impulse current: 110A Kind of package: reel; tape Leakage current: 10mA |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| SDT10100CT | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.76V Max. forward impulse current: 90A Kind of package: tube Leakage current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBRB10100CT | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Max. forward impulse current: 110A Kind of package: tube Leakage current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AZ23C7V5-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DZ23C7V5-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C7V5T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMCJ24A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2392 шт: термін постачання 21-30 дні (днів) |
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| SMCJ24AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 3.0SMCJ24A-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 77.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BC846ASQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMCJ6.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 145.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SMBJ58AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP1533SG-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4÷23VDC; Uout: 0.8÷23VDC; 1.8A; SOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4...23V DC Output current: 1.8A Case: SOP8 Mounting: SMD Frequency: 300kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 91% Output voltage: 0.8...23V DC |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| 2N7002H-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.51W Case: SOT23 On-state resistance: 7.5Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2N7002K-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; 370mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Power dissipation: 0.37W Case: SOT23 On-state resistance: 2Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
DMP2100UFU-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Power dissipation: 0.9W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: U-DFN2030-6 |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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ZXMS6005DGTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223 Type of transistor: N-MOSFET Technology: IntelliFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Power dissipation: 1.3W Case: SOT223 On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Version: ESD |
на замовлення 504 шт: термін постачання 21-30 дні (днів) |
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ZXMS6004FFTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Case: SOT23F On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: low-side Kind of output: N-Channel Type of integrated circuit: power switch Supply voltage: 0...5.5V DC Number of channels: 1 Output current: 1.3A Control voltage: 60V DC |
на замовлення 4181 шт: термін постачання 21-30 дні (днів) |
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ZXMS6004DGTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223 Case: SOT223 On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: low-side Kind of output: N-Channel Type of integrated circuit: power switch Operating temperature: -40...125°C Supply voltage: 0...5.5V DC Number of channels: 1 Output current: 1.3A |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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ZXMS6004DN8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: low-side Kind of output: N-Channel Type of integrated circuit: power switch Operating temperature: -40...125°C Supply voltage: 0...5.5V DC Number of channels: 2 Output current: 1.3A |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
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AP2151AW-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 0.5A Number of channels: 1 Mounting: SMD Case: SOT25 On-state resistance: 95mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high Kind of output: P-Channel |
на замовлення 8087 шт: термін постачання 21-30 дні (днів) |
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| AP22814ASN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2020-6 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDTA124TCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Current gain: 100...600 Power dissipation: 0.2W Frequency: 250MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDTA124XCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Power dissipation: 0.2W Frequency: 250MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DDTA124XE-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT523 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Power dissipation: 0.15W Frequency: 250MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C33-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 1965 шт: термін постачання 21-30 дні (днів) |
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| ZTX415STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 0.5A; 680mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.68W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40MHz
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC1G04QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.34 грн |
| DMG4800LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Gate-source voltage: ±25V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Gate-source voltage: ±25V
Kind of channel: enhancement
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.00 грн |
| 12+ | 35.01 грн |
| 50+ | 24.04 грн |
| 100+ | 20.49 грн |
| 500+ | 14.84 грн |
| 1000+ | 13.23 грн |
| MMDT5451-7-F |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 160/150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 160/150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
на замовлення 2785 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.25 грн |
| 29+ | 14.36 грн |
| 33+ | 12.26 грн |
| 53+ | 7.70 грн |
| 100+ | 6.26 грн |
| 500+ | 4.24 грн |
| 1000+ | 3.76 грн |
| ZXTD4591E6TA |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 1.1W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.1W
Case: SOT26
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 1.1W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.1W
Case: SOT26
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.90 грн |
| 10+ | 43.24 грн |
| 30+ | 31.71 грн |
| 50+ | 27.27 грн |
| 100+ | 22.75 грн |
| 150+ | 20.65 грн |
| DMP3056LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -30V
Drain current: -5.1A
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
на замовлення 2367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.08 грн |
| 11+ | 39.61 грн |
| 100+ | 26.95 грн |
| 500+ | 20.33 грн |
| 650+ | 19.36 грн |
| 1000+ | 17.99 грн |
| BCX38C |
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Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Pulsed collector current: 2A
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Pulsed collector current: 2A
на замовлення 3702 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 71.24 грн |
| 10+ | 42.76 грн |
| 25+ | 36.30 грн |
| 100+ | 28.64 грн |
| 200+ | 25.49 грн |
| 500+ | 21.86 грн |
| 1000+ | 19.44 грн |
| 2000+ | 18.88 грн |
| ZTX614 |
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Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: TO92
Current gain: 5000...10000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
на замовлення 3883 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.46 грн |
| 10+ | 45.42 грн |
| 100+ | 29.20 грн |
| 250+ | 25.09 грн |
| 500+ | 22.59 грн |
| 1000+ | 20.90 грн |
| SMBJ26A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1457 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.11 грн |
| 28+ | 14.68 грн |
| 33+ | 12.34 грн |
| 45+ | 9.12 грн |
| 100+ | 5.65 грн |
| 500+ | 5.08 грн |
| SMBJ26AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DF08M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G32QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G32SE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G32W5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Kind of output: totem pole
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G32QW5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; IN: 2; SMD; SOT25; -40÷125°C; 1uA; AHCT; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of inputs: 2
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Quiescent current: 1µA
Family: AHCT
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; OR; IN: 2; SMD; SOT25; -40÷125°C; 1uA; AHCT; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of inputs: 2
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Quiescent current: 1µA
Family: AHCT
Number of outputs: 1
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.65 грн |
| 74HCT164T14-13 |
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Виробник: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Mounting: SMD
Kind of output: push-pull
Kind of package: reel; tape
Type of integrated circuit: digital
Case: TSSOP14
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Number of channels: 8
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Mounting: SMD
Kind of output: push-pull
Kind of package: reel; tape
Type of integrated circuit: digital
Case: TSSOP14
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Number of channels: 8
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
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| SMCJ33AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| TT410-13 |
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на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 26.24 грн |
| US1DWFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| FMMT413TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 150MHz
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| FMMT415TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
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| FMMT416TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
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| FMMT411TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.9A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.9A; 800mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.9A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
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| FMMT417TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Quantity in set/package: 500pcs.
Kind of package: reel; tape
Frequency: 40MHz
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| BZT52C3V0-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 5945 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.95 грн |
| 80+ | 5.08 грн |
| 97+ | 4.16 грн |
| 135+ | 3.00 грн |
| 500+ | 2.11 грн |
| 1000+ | 1.85 грн |
| 3000+ | 1.54 грн |
| DMMT2907A-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
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| DGD2103MS8-13 |
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Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
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| 74LVC1G57W6-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
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| MMBTA56Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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| SMAZ15-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 67mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 67mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 3853 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.38 грн |
| 38+ | 10.89 грн |
| 54+ | 7.58 грн |
| 100+ | 6.62 грн |
| 250+ | 5.73 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.84 грн |
| 3000+ | 4.76 грн |
| FES1DEQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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| SMAJ28CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 6465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.51 грн |
| 39+ | 10.41 грн |
| 100+ | 5.41 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.92 грн |
| 5000+ | 4.44 грн |
| SMAJ28CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| MBRD10100CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
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| MBRB10100CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 10mA
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.87 грн |
| 12+ | 34.77 грн |
| SDT10100CT |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 10mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.76V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 10mA
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| MBRB10100CT |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: tube
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 110A
Kind of package: tube
Leakage current: 10mA
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| AZ23C7V5-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
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| DZ23C7V5-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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| BZT52C7V5T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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| SMCJ24A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2392 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.80 грн |
| 18+ | 23.23 грн |
| SMCJ24AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| 3.0SMCJ24A-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| BC846ASQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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| SMCJ6.0A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ58AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| AP1533SG-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4÷23VDC; Uout: 0.8÷23VDC; 1.8A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4...23V DC
Output current: 1.8A
Case: SOP8
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 91%
Output voltage: 0.8...23V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4÷23VDC; Uout: 0.8÷23VDC; 1.8A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4...23V DC
Output current: 1.8A
Case: SOP8
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 91%
Output voltage: 0.8...23V DC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.09 грн |
| 2N7002H-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
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| 2N7002K-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; 370mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.37W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; 370mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.37W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
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| DMP2100UFU-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.11 грн |
| 500+ | 14.20 грн |
| 1000+ | 12.75 грн |
| ZXMS6005DGTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
на замовлення 504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.19 грн |
| 10+ | 50.18 грн |
| 25+ | 44.13 грн |
| 100+ | 36.55 грн |
| 250+ | 34.53 грн |
| ZXMS6004FFTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Case: SOT23F
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Case: SOT23F
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
Control voltage: 60V DC
на замовлення 4181 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.21 грн |
| 11+ | 37.27 грн |
| 25+ | 37.11 грн |
| ZXMS6004DGTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
на замовлення 990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.57 грн |
| 10+ | 56.72 грн |
| 50+ | 45.66 грн |
| 100+ | 41.71 грн |
| 250+ | 37.84 грн |
| ZXMS6004DN8-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Output current: 1.3A
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Output current: 1.3A
на замовлення 128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.82 грн |
| 10+ | 41.31 грн |
| 25+ | 37.60 грн |
| 100+ | 34.53 грн |
| AP2151AW-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
на замовлення 8087 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.33 грн |
| 22+ | 18.72 грн |
| 25+ | 16.70 грн |
| 29+ | 14.36 грн |
| 100+ | 11.62 грн |
| 250+ | 11.21 грн |
| AP22814ASN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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| DDTA124TCA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Current gain: 100...600
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Current gain: 100...600
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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| DDTA124XCA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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| DDTA124XE-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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| BZX84C33-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 1965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.95 грн |
| 148+ | 2.74 грн |
| 170+ | 2.38 грн |
| 224+ | 1.81 грн |
| 500+ | 1.44 грн |
| 1000+ | 1.34 грн |






















