Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74413) > Сторінка 1236 з 1241
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMP26M7UFG-7 | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14.5A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 9mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||
 |
BAV116W-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 130V; 215mA; 3us; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 130V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD123 Kind of package: reel; tape Max. forward voltage: 1.25V |
на замовлення 1940 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
BAV116WSQ-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Kind of package: reel; tape Max. forward voltage: 1.25V Application: automotive industry |
на замовлення 1029 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| AL1788W6-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
товар відсутній |
||||||||||||
 |
SMCJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 20.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
|||||||||||
 |
KBP005G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
KBP01G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товар відсутній |
|||||||||||
|
|
KBP02G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
SMBT70A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SMB Max. off-state voltage: 70V Semiconductor structure: unidirectional Max. forward impulse current: 5.3A Breakdown voltage: 77.8...89.5V Leakage current: 5µA |
товар відсутній |
|||||||||||
|
|
SMCJ70A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 1.5kW Mounting: SMD Case: SMC Max. off-state voltage: 70V Semiconductor structure: unidirectional Max. forward impulse current: 13.3A Breakdown voltage: 77.8...86V Leakage current: 5µA |
товар відсутній |
|||||||||||
|
|
SMCJ170A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 1.5kW Mounting: SMD Case: SMC Max. off-state voltage: 170V Semiconductor structure: unidirectional Max. forward impulse current: 5.5A Breakdown voltage: 189...209V Leakage current: 5µA |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
DMG4496SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Power dissipation: 1.42W Kind of package: reel; tape Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 29mΩ Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||
| DFLS1200-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape Mounting: SMD Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape Type of diode: Schottky rectifying Case: PowerDI®123 Max. off-state voltage: 200V Max. forward voltage: 0.85V |
товар відсутній |
||||||||||||
| DFLS1200Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape Mounting: SMD Application: automotive industry Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 2µA Kind of package: reel; tape Type of diode: Schottky rectifying Case: PowerDI®123 Capacitance: 23pF Max. off-state voltage: 200V Max. forward voltage: 0.85V |
товар відсутній |
||||||||||||
| DFLS120L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape Mounting: SMD Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: PowerDI®123 Max. off-state voltage: 20V Max. forward voltage: 0.36V |
товар відсутній |
||||||||||||
| DFLS120LQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape Mounting: SMD Application: automotive industry Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 1mA Power dissipation: 1.67W Kind of package: reel; tape Type of diode: Schottky rectifying Case: PowerDI®123 Capacitance: 75pF Max. off-state voltage: 20V Max. forward voltage: 0.36V |
товар відсутній |
||||||||||||
 |
DFLS160-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape Mounting: SMD Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: PowerDI®123 Capacitance: 67pF Max. off-state voltage: 60V Max. forward voltage: 0.5V |
на замовлення 991 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| DFLS160Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123 Mounting: SMD Application: automotive industry Load current: 1A Semiconductor structure: single diode Reverse recovery time: 12ns Max. forward impulse current: 50A Leakage current: 0.1mA Kind of package: reel; tape Type of diode: Schottky rectifying Case: PowerDI®123 Capacitance: 67pF Max. off-state voltage: 60V Max. forward voltage: 0.5V |
товар відсутній |
||||||||||||
| PD3S120L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Case: PowerDI®323 Mounting: SMD Semiconductor structure: single diode Leakage current: 30mA Max. forward voltage: 0.42V Max. off-state voltage: 20V Load current: 1A Max. forward impulse current: 33A Capacitance: 49pF |
товар відсутній |
||||||||||||
| PD3S120LQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Case: PowerDI®323 Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA Max. load current: 1A Max. forward voltage: 0.42V Max. off-state voltage: 20V Load current: 1A Max. forward impulse current: 33A |
товар відсутній |
||||||||||||
| PD3S220LQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Case: PowerDI®323 Mounting: SMD Semiconductor structure: single diode Leakage current: 30µA Max. load current: 2A Max. forward voltage: 0.49V Max. off-state voltage: 20V Load current: 2A Max. forward impulse current: 33A |
товар відсутній |
||||||||||||
|
|
SMBJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 50...57.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
|||||||||||
| ZXTR1005K4-13 | DIODES INCORPORATED |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 50mA Case: TO252-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 10...100V |
товар відсутній |
||||||||||||
| ZXTR1005PD8-13 | DIODES INCORPORATED |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 42mA Case: PowerDI®5060-8 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 10...100V |
товар відсутній |
||||||||||||
| DMP2012SN-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -900mA Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||
 |
DMN66D0LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
|||||||||||
 |
AP431G-13 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOP8 Operating temperature: -20...85°C Kind of package: reel; tape Maximum output current: 200mA Operating voltage: 2.495...36V |
товар відсутній |
|||||||||||
 |
AP431IANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товар відсутній |
|||||||||||
|
|
AP431IBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товар відсутній |
|||||||||||
 |
AP431IBRTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT89 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товар відсутній |
|||||||||||
|
|
AP431SAG-7 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -20...85°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
товар відсутній |
|||||||||||
|
|
AP431SAN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 6860 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
AP431SANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товар відсутній |
|||||||||||
|
|
AP431SBN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
на замовлення 2275 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
AP431SBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
товар відсутній |
|||||||||||
|
|
AP431SHAN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
товар відсутній |
|||||||||||
|
|
AP431SHANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
товар відсутній |
|||||||||||
| ZDT6753TA | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
товар відсутній |
||||||||||||
| ZDT6753TC | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
товар відсутній |
||||||||||||
 |
FZT758TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
ZXGD3003E6TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
на замовлення 2939 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| B530CQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 100A Semiconductor structure: single diode Case: SMC Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Application: automotive industry Capacitance: 300pF Reverse recovery time: 16ns Load current: 5A Max. forward voltage: 0.55V |
товар відсутній |
||||||||||||
| ZXGD3108N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
товар відсутній |
||||||||||||
| DESD32VS2SO-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
товар відсутній |
||||||||||||
|
|
1SMB5929B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 2620 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| DMT47M2SFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Kind of channel: enhanced |
товар відсутній |
||||||||||||
| DMT6017LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Mounting: SMD Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.3nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 140A Case: PowerDI3333-8 |
товар відсутній |
||||||||||||
 |
KBJ402G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A Electrical mounting: THT Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 120A Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: KBJ Leads: flat pin |
товар відсутній |
|||||||||||
|
|
KBJ404G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A Electrical mounting: THT Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 120A Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: KBJ Leads: flat pin |
товар відсутній |
|||||||||||
 |
UDZ11B-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 11V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
товар відсутній |
|||||||||||
| DT1446-04V-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
товар відсутній |
||||||||||||
| DMP2069UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET |
товар відсутній |
||||||||||||
| DMP2069UFY4Q-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET |
товар відсутній |
||||||||||||
 |
AP22913W6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: SOT26 Output current: 2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high |
товар відсутній |
|||||||||||
| DM1231-02SO-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
товар відсутній |
||||||||||||
| DMN32D2LDF-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.28W Case: SOT353 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common source Features of semiconductor devices: ESD protected gate |
товар відсутній |
||||||||||||
| ZXMHC10A07T8TA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товар відсутній |
||||||||||||
 +1 |
B130LB-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape Mounting: SMD Case: SMB Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 90pF Max. off-state voltage: 30V Max. forward voltage: 0.445V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A |
на замовлення 5489 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
MMBT6427-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 3075 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
SMCJ8.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 110.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2806 шт: термін постачання 21-30 дні (днів) |
|
| DMP26M7UFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BAV116W-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 215mA; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 215mA; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1.25V
на замовлення 1940 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.84 грн |
| 110+ | 3.37 грн |
| 250+ | 2.98 грн |
| 290+ | 2.83 грн |
| 790+ | 2.68 грн |
| BAV116WSQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.25V
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.25V
Application: automotive industry
на замовлення 1029 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.5 грн |
| 420+ | 1.98 грн |
| AL1788W6-7 |
|
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
| SMCJ45A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| KBP005G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 105 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 24+ | 15.02 грн |
| 35+ | 13.21 грн |
| 70+ | 11.47 грн |
| KBP01G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товар відсутній
| KBP02G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.93 грн |
| 20+ | 18.08 грн |
| 35+ | 15.93 грн |
| 58+ | 13.84 грн |
| 160+ | 13.07 грн |
| SMBT70A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
товар відсутній
| SMCJ70A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 13.3A
Breakdown voltage: 77.8...86V
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 13.3A
Breakdown voltage: 77.8...86V
Leakage current: 5µA
товар відсутній
| SMCJ170A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 189...209V
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 189...209V
Leakage current: 5µA
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.22 грн |
| 25+ | 15.02 грн |
| 70+ | 11.54 грн |
| 192+ | 10.92 грн |
| DMG4496SSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
товар відсутній
| DFLS1200-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
товар відсутній
| DFLS1200Q-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 23pF
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 2µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 23pF
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
товар відсутній
| DFLS120L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
товар відсутній
| DFLS120LQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1mA
Power dissipation: 1.67W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 75pF
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1mA
Power dissipation: 1.67W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 75pF
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
товар відсутній
| DFLS160-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
на замовлення 991 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.2 грн |
| 34+ | 10.5 грн |
| 100+ | 9.25 грн |
| 101+ | 8.03 грн |
| 276+ | 7.59 грн |
| DFLS160Q-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123
Mounting: SMD
Application: automotive industry
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123
Mounting: SMD
Application: automotive industry
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
товар відсутній
| PD3S120L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30mA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Capacitance: 49pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30mA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Capacitance: 49pF
товар відсутній
| PD3S120LQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Max. load current: 1A
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Max. load current: 1A
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
товар відсутній
| PD3S220LQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30µA
Max. load current: 2A
Max. forward voltage: 0.49V
Max. off-state voltage: 20V
Load current: 2A
Max. forward impulse current: 33A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30µA
Max. load current: 2A
Max. forward voltage: 0.49V
Max. off-state voltage: 20V
Load current: 2A
Max. forward impulse current: 33A
товар відсутній
| SMBJ45A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| ZXTR1005K4-13 |
|
Виробник: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: TO252-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: TO252-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
товар відсутній
| ZXTR1005PD8-13 |
|
Виробник: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 42mA
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 42mA
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
товар відсутній
| DMP2012SN-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN66D0LDW-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| AP431G-13 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOP8
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 200mA
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOP8
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 200mA
Operating voltage: 2.495...36V
товар відсутній
| AP431IANTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товар відсутній
| AP431IBNTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товар відсутній
| AP431IBRTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товар відсутній
| AP431SAG-7 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
товар відсутній
| AP431SAN1TR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 6860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.13 грн |
| 50+ | 7.37 грн |
| 100+ | 6.54 грн |
| 140+ | 5.77 грн |
| 385+ | 5.45 грн |
| AP431SANTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товар відсутній
| AP431SBN1TR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.23 грн |
| 50+ | 7.02 грн |
| 100+ | 6.12 грн |
| 145+ | 5.57 грн |
| 400+ | 5.26 грн |
| AP431SBNTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товар відсутній
| AP431SHAN1TR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
товар відсутній
| AP431SHANTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
товар відсутній
| ZDT6753TA |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товар відсутній
| ZDT6753TC |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товар відсутній
| FZT758TA |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.17 грн |
| 14+ | 25.87 грн |
| 25+ | 23.3 грн |
| 44+ | 18.57 грн |
| 120+ | 17.59 грн |
| ZXGD3003E6TA |
|
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2939 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.19 грн |
| 16+ | 23.09 грн |
| 25+ | 21 грн |
| 51+ | 15.99 грн |
| 139+ | 15.09 грн |
| B530CQ-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
товар відсутній
| ZXGD3108N8TC |
|
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
| DESD32VS2SO-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| 1SMB5929B-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 2620 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.38 грн |
| 45+ | 8.28 грн |
| 100+ | 7.3 грн |
| 130+ | 6.3 грн |
| 355+ | 5.96 грн |
| DMT47M2SFVWQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| DMT6017LFV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
товар відсутній
| KBJ402G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
товар відсутній
| KBJ404G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
товар відсутній
| UDZ11B-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
товар відсутній
| DT1446-04V-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DMP2069UFY4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
товар відсутній
| DMP2069UFY4Q-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
товар відсутній
| AP22913W6-7 |
|
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
товар відсутній
| DM1231-02SO-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DMN32D2LDF-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
товар відсутній
| ZXMHC10A07T8TA |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| B130LB-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
на замовлення 5489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.89 грн |
| 60+ | 6.12 грн |
| 100+ | 5.42 грн |
| 175+ | 4.69 грн |
| 475+ | 4.44 грн |
| MMBT6427-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 3075 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3 грн |
| 150+ | 2.5 грн |
| 425+ | 1.96 грн |
| 1150+ | 1.85 грн |
| SMCJ8.0A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2806 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.22 грн |
| 29+ | 12.38 грн |
| 79+ | 10.29 грн |
| 216+ | 9.74 грн |