Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78833) > Сторінка 1263 з 1314
Фото | Назва | Виробник | Інформація |
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DMT6004LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 16A On-state resistance: 4.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 78.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT6004SCT | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Case: TO220AB Kind of package: tube Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Gate charge: 95.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 180A Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMT6004SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 18A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 95.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6005LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 14A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 48.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6005LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 14A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 48.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6005LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 14.7A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 47.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 500A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6006LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 71A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 34.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 350A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT6006LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 11.7A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 2.08W Polarisation: unipolar Gate charge: 34.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMT6006SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 13A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 2.45W Polarisation: unipolar Gate charge: 27.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 390A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6007LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT6007LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 70A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 1987 шт: термін постачання 21-30 дні (днів) |
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DMT6007LFGQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6007LFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6008LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 11A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 50.4nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6008LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 11A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 50.4nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ30A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1759 шт: термін постачання 21-30 дні (днів) |
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AP2112K-1.2TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD Voltage drop: 1.3V Type of integrated circuit: voltage regulator Case: SOT23-5 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input Kind of package: reel; tape Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Number of channels: 1 Tolerance: ±1.5% Operating temperature: -40...85°C Output voltage: 1.2V Output current: 0.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2112K-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD Voltage drop: 0.4V Type of integrated circuit: voltage regulator Case: SOT23-5 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input Kind of package: reel; tape Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Number of channels: 1 Tolerance: ±1.5% Operating temperature: -40...85°C Output voltage: 2.5V Output current: 0.6A |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SMBJ16A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 643 шт: термін постачання 21-30 дні (днів) |
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SMAJ58A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
на замовлення 3434 шт: термін постачання 21-30 дні (днів) |
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DMC3021LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 7/-8.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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SMAJ6.5A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3130 шт: термін постачання 21-30 дні (днів) |
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BSS127S-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 600V Drain current: 70mA On-state resistance: 160Ω Type of transistor: N-MOSFET Power dissipation: 0.61W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 2781 шт: термін постачання 21-30 дні (днів) |
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SMBJ58A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2565 шт: термін постачання 21-30 дні (днів) |
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SMBJ26A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2532 шт: термін постачання 21-30 дні (днів) |
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DDTC114ECA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ Collector current: 50mA Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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74HCT125S14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: HCT |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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TL431ASA-7 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 264 шт: термін постачання 21-30 дні (днів) |
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PAM8902HKER | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC Operating temperature: -40...125°C Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: QFN16 Type of integrated circuit: audio amplifier Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904EGPR | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: WQFN12 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904EJER | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Mounting: SMD Case: UQFN16 Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904EJPR | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; UQFN12; 1.5÷5.5VDC Type of integrated circuit: driver Mounting: SMD Case: UQFN12 Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.5...5.5V DC Kind of integrated circuit: piezo sounder |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904JER | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; UQFN16; 2.3÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Mounting: SMD Case: UQFN16 Kind of package: reel; tape Voltage supply range: 2.3...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904JPR | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; UQFN12; 1.8÷5.5VDC Operating temperature: -40...150°C Kind of package: reel; tape Kind of integrated circuit: piezo sounder Voltage supply range: 1.8...5.5V DC Mounting: SMD Case: UQFN12 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904QJER | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; UQFN16; 2.3÷5VDC Operating temperature: -40...150°C Kind of package: reel; tape Kind of integrated circuit: piezo sounder Voltage supply range: 2.3...5V DC Mounting: SMD Case: UQFN16 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8907SB10-7 | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; UQFN10; 1.8÷5.5VDC Operating temperature: -40...150°C Kind of package: reel; tape Kind of integrated circuit: piezo sounder Voltage supply range: 1.8...5.5V DC Mounting: SMD Case: UQFN10 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8908JER | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2 Operating temperature: -40...125°C Integrated circuit features: headphone driver; stereo Kind of package: reel; tape Amplifier class: AB Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: UQFN16 Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 25mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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HD06-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP Case: MiniDIP Kind of package: reel; tape Electrical mounting: SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A |
на замовлення 2843 шт: термін постачання 21-30 дні (днів) |
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AP63300WU-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 0.8...31V DC Output current: 3A Case: TSOT26 Mounting: SMD Frequency: 0.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 96% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G125SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA Mounting: SMD Case: SOT353 Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Quiescent current: 200µA Kind of output: 3-state Manufacturer series: LVC Kind of integrated circuit: buffer; non-inverting Operating temperature: -40...125°C Supply voltage: 1.65...5.5V DC |
на замовлення 592 шт: термін постачання 21-30 дні (днів) |
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74LVC1G125W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C Supply voltage: 1.65...5.5V DC Manufacturer series: LVC Operating temperature: -40...125°C Case: SOT25 Type of integrated circuit: digital Number of channels: 1 Quiescent current: 200µA Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSP75NTA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223 Mounting: SMD On-state resistance: 0.55Ω Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Control voltage: 60V DC Kind of integrated circuit: low-side Case: SOT223 Supply voltage: 0...5.5V DC |
на замовлення 1021 шт: термін постачання 21-30 дні (днів) |
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ZTL431BFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 11953 шт: термін постачання 21-30 дні (днів) |
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BAS40-06-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Mounting: SMD Reverse recovery time: 5ns Max. forward impulse current: 0.6A Leakage current: 0.2µA Capacitance: 5pF Power dissipation: 0.35W Case: SOT23 Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: common anode; double |
на замовлення 2220 шт: термін постачання 21-30 дні (днів) |
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SMBJ28A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP2104LP-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Power dissipation: 0.5W Case: DFN1411-3 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 1458 шт: термін постачання 21-30 дні (днів) |
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DMP2120U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23 Power dissipation: 0.8W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 62mΩ Type of transistor: P-MOSFET |
на замовлення 4682 шт: термін постачання 21-30 дні (днів) |
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DMP2130L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -2.4A On-state resistance: 0.125Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±10V |
на замовлення 1201 шт: термін постачання 21-30 дні (днів) |
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DMP2130LDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX54TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Frequency: 150MHz Kind of package: reel; tape |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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FMMT625TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23 Quantity in set/package: 3000pcs. Collector-emitter voltage: 150V Current gain: 15...400 Collector current: 1A Type of transistor: NPN Power dissipation: 0.625W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 Frequency: 135MHz |
на замовлення 2460 шт: термін постачання 21-30 дні (днів) |
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MMBD914-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Max. off-state voltage: 75V Max. load current: 0.3A Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 2A Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: small signal Mounting: SMD Case: SOT23 Capacitance: 2pF |
на замовлення 4498 шт: термін постачання 21-30 дні (днів) |
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BCX5310TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Current gain: 63...160 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Power dissipation: 1W |
на замовлення 2764 шт: термін постачання 21-30 дні (днів) |
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BCX5316TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Current gain: 100...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Power dissipation: 1W |
на замовлення 2001 шт: термін постачання 21-30 дні (днів) |
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BCX53TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Power dissipation: 1W |
на замовлення 1900 шт: термін постачання 21-30 дні (днів) |
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BCX53TC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PAM8016AKR | DIODES INCORPORATED |
![]() Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9 Operating temperature: -25...85°C Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA) Kind of integrated circuit: haptic motor controller Topology: H-bridge Mounting: SMD Case: U-FLGA1515-9 Operating voltage: 2.8...5.5V DC Type of integrated circuit: driver Interface: PWM Application: haptic motors; linear actuator; servos |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PAM8302AADCR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Operating temperature: -40...85°C Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2...5.5V DC Mounting: SMD Case: SO8 Type of integrated circuit: audio amplifier Number of channels: 1 Output power: 2.5W |
на замовлення 1740 шт: термін постачання 21-30 дні (днів) |
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PAM8302AASCR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Type of integrated circuit: audio amplifier Mounting: SMD Case: MSOP8 Operating temperature: -40...85°C Voltage supply range: 2...5.5V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Number of channels: 1 Output power: 2.5W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8302AAYCR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Type of integrated circuit: audio amplifier Mounting: SMD Case: U-DFN3030-8 Operating temperature: -40...85°C Voltage supply range: 2...5.5V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Number of channels: 1 Output power: 2.5W |
товару немає в наявності |
В кошику од. на суму грн. |
DMT6004LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6004SCT |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
DMT6004SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6005LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6005LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6005LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6006LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6006LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6006SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 390A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 390A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6007LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6007LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 1987 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.10 грн |
10+ | 57.78 грн |
22+ | 41.46 грн |
60+ | 39.24 грн |
500+ | 37.78 грн |
DMT6007LFGQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6007LFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6008LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
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DMT6008LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
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SMBJ30A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1759 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.71 грн |
23+ | 16.71 грн |
100+ | 9.12 грн |
163+ | 5.52 грн |
449+ | 5.21 грн |
AP2112K-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Case: SOT23-5
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 1.2V
Output current: 0.6A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Case: SOT23-5
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 1.2V
Output current: 0.6A
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AP2112K-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SOT23-5
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 2.5V
Output current: 0.6A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Voltage drop: 0.4V
Type of integrated circuit: voltage regulator
Case: SOT23-5
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1.5%
Operating temperature: -40...85°C
Output voltage: 2.5V
Output current: 0.6A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.31 грн |
17+ | 23.76 грн |
20+ | 19.24 грн |
100+ | 9.81 грн |
150+ | 5.98 грн |
412+ | 5.67 грн |
SMBJ16A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 643 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
22+ | 17.93 грн |
28+ | 13.87 грн |
100+ | 9.12 грн |
143+ | 6.36 грн |
391+ | 5.98 грн |
SMAJ58A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 3434 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.46 грн |
31+ | 12.41 грн |
50+ | 8.22 грн |
100+ | 6.92 грн |
214+ | 4.18 грн |
588+ | 3.95 грн |
DMC3021LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 136 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.26 грн |
14+ | 28.12 грн |
63+ | 14.25 грн |
SMAJ6.5A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.98 грн |
31+ | 12.72 грн |
39+ | 9.89 грн |
100+ | 5.08 грн |
224+ | 4.01 грн |
500+ | 3.74 грн |
1000+ | 3.64 грн |
BSS127S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 600V
Drain current: 70mA
On-state resistance: 160Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 600V
Drain current: 70mA
On-state resistance: 160Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2781 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.36 грн |
20+ | 19.62 грн |
25+ | 15.40 грн |
100+ | 7.20 грн |
189+ | 4.73 грн |
520+ | 4.48 грн |
SMBJ58A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2565 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.86 грн |
50+ | 8.28 грн |
100+ | 7.28 грн |
145+ | 6.28 грн |
390+ | 5.98 грн |
SMBJ26A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷33.2V; 14.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2532 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.28 грн |
26+ | 15.25 грн |
35+ | 11.19 грн |
100+ | 6.51 грн |
171+ | 5.29 грн |
468+ | 4.98 грн |
DDTC114ECA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
на замовлення 330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.25 грн |
69+ | 5.59 грн |
139+ | 2.77 грн |
250+ | 2.51 грн |
74HCT125S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HCT
на замовлення 80 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.04 грн |
47+ | 8.28 грн |
TL431ASA-7 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 264 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.36 грн |
19+ | 21.00 грн |
23+ | 17.24 грн |
29+ | 13.26 грн |
100+ | 9.12 грн |
207+ | 4.37 грн |
PAM8902HKER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Operating temperature: -40...125°C
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN16
Type of integrated circuit: audio amplifier
Number of channels: 1
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Operating temperature: -40...125°C
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN16
Type of integrated circuit: audio amplifier
Number of channels: 1
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PAM8904EGPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: WQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: WQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
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од. на суму грн.
PAM8904EJER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: UQFN16
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: UQFN16
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
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од. на суму грн.
PAM8904EJPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Mounting: SMD
Case: UQFN12
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Kind of integrated circuit: piezo sounder
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Mounting: SMD
Case: UQFN12
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Kind of integrated circuit: piezo sounder
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од. на суму грн.
PAM8904JER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: UQFN16
Kind of package: reel; tape
Voltage supply range: 2.3...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: UQFN16
Kind of package: reel; tape
Voltage supply range: 2.3...5.5V DC
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од. на суму грн.
PAM8904JPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.8÷5.5VDC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of integrated circuit: piezo sounder
Voltage supply range: 1.8...5.5V DC
Mounting: SMD
Case: UQFN12
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.8÷5.5VDC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of integrated circuit: piezo sounder
Voltage supply range: 1.8...5.5V DC
Mounting: SMD
Case: UQFN12
Type of integrated circuit: driver
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PAM8904QJER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5VDC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of integrated circuit: piezo sounder
Voltage supply range: 2.3...5V DC
Mounting: SMD
Case: UQFN16
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5VDC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of integrated circuit: piezo sounder
Voltage supply range: 2.3...5V DC
Mounting: SMD
Case: UQFN16
Type of integrated circuit: driver
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PAM8907SB10-7 |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; 1.8÷5.5VDC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of integrated circuit: piezo sounder
Voltage supply range: 1.8...5.5V DC
Mounting: SMD
Case: UQFN10
Type of integrated circuit: driver
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; 1.8÷5.5VDC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of integrated circuit: piezo sounder
Voltage supply range: 1.8...5.5V DC
Mounting: SMD
Case: UQFN10
Type of integrated circuit: driver
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PAM8908JER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Operating temperature: -40...125°C
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: AB
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: UQFN16
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 25mW
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Operating temperature: -40...125°C
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: AB
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: UQFN16
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 25mW
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HD06-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
на замовлення 2843 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.61 грн |
17+ | 22.84 грн |
100+ | 15.10 грн |
114+ | 7.89 грн |
313+ | 7.43 грн |
AP63300WU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
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74LVC1G125SE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
Manufacturer series: LVC
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Case: SOT353
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
Manufacturer series: LVC
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
на замовлення 592 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.16 грн |
41+ | 9.43 грн |
52+ | 7.45 грн |
62+ | 6.21 грн |
100+ | 5.13 грн |
359+ | 2.49 грн |
74LVC1G125W5-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Operating temperature: -40...125°C
Case: SOT25
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVC; -40÷125°C
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Operating temperature: -40...125°C
Case: SOT25
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
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од. на суму грн.
BSP75NTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Mounting: SMD
On-state resistance: 0.55Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Control voltage: 60V DC
Kind of integrated circuit: low-side
Case: SOT223
Supply voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Mounting: SMD
On-state resistance: 0.55Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Control voltage: 60V DC
Kind of integrated circuit: low-side
Case: SOT223
Supply voltage: 0...5.5V DC
на замовлення 1021 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 99.03 грн |
10+ | 60.23 грн |
23+ | 40.08 грн |
50+ | 40.00 грн |
62+ | 37.86 грн |
250+ | 36.40 грн |
ZTL431BFTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 11953 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.28 грн |
25+ | 18.01 грн |
89+ | 10.04 грн |
245+ | 9.50 грн |
500+ | 9.20 грн |
BAS40-06-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Mounting: SMD
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.2µA
Capacitance: 5pF
Power dissipation: 0.35W
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: common anode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Mounting: SMD
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 0.2µA
Capacitance: 5pF
Power dissipation: 0.35W
Case: SOT23
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: common anode; double
на замовлення 2220 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.49 грн |
68+ | 5.67 грн |
101+ | 3.82 грн |
500+ | 3.03 грн |
512+ | 1.75 грн |
1406+ | 1.66 грн |
SMBJ28A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP2104LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1458 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.01 грн |
18+ | 21.46 грн |
23+ | 16.71 грн |
91+ | 9.89 грн |
100+ | 9.04 грн |
DMP2120U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
на замовлення 4682 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.51 грн |
39+ | 9.89 грн |
56+ | 6.94 грн |
75+ | 6.32 грн |
100+ | 5.92 грн |
230+ | 3.90 грн |
632+ | 3.69 грн |
1000+ | 3.55 грн |
DMP2130L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±10V
на замовлення 1201 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.01 грн |
20+ | 19.62 грн |
100+ | 12.18 грн |
180+ | 4.98 грн |
495+ | 4.67 грн |
DMP2130LDM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Mounting: SMD
Case: SOT26
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Mounting: SMD
Case: SOT26
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
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од. на суму грн.
BCX54TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
на замовлення 268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.23 грн |
25+ | 15.79 грн |
50+ | 11.19 грн |
100+ | 9.50 грн |
195+ | 4.60 грн |
FMMT625TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 150V
Current gain: 15...400
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Frequency: 135MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 150V
Current gain: 15...400
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Frequency: 135MHz
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.61 грн |
14+ | 27.97 грн |
71+ | 12.64 грн |
195+ | 11.95 грн |
MMBD914-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. off-state voltage: 75V
Max. load current: 0.3A
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. off-state voltage: 75V
Max. load current: 0.3A
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOT23
Capacitance: 2pF
на замовлення 4498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.10 грн |
114+ | 3.37 грн |
211+ | 1.82 грн |
500+ | 1.31 грн |
806+ | 1.11 грн |
2211+ | 1.06 грн |
3000+ | 1.02 грн |
BCX5310TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 1W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 1W
на замовлення 2764 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.41 грн |
25+ | 15.79 грн |
100+ | 7.28 грн |
182+ | 4.98 грн |
500+ | 4.67 грн |
2000+ | 4.52 грн |
BCX5316TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 1W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 1W
на замовлення 2001 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.11 грн |
27+ | 14.41 грн |
100+ | 11.21 грн |
216+ | 4.18 грн |
593+ | 3.95 грн |
1000+ | 3.86 грн |
BCX53TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 1W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 1W
на замовлення 1900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.88 грн |
23+ | 17.01 грн |
28+ | 13.95 грн |
100+ | 9.89 грн |
182+ | 4.98 грн |
500+ | 4.67 грн |
BCX53TC |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
PAM8016AKR |
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Виробник: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Operating temperature: -25...85°C
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Kind of integrated circuit: haptic motor controller
Topology: H-bridge
Mounting: SMD
Case: U-FLGA1515-9
Operating voltage: 2.8...5.5V DC
Type of integrated circuit: driver
Interface: PWM
Application: haptic motors; linear actuator; servos
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Operating temperature: -25...85°C
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Kind of integrated circuit: haptic motor controller
Topology: H-bridge
Mounting: SMD
Case: U-FLGA1515-9
Operating voltage: 2.8...5.5V DC
Type of integrated circuit: driver
Interface: PWM
Application: haptic motors; linear actuator; servos
товару немає в наявності
В кошику
од. на суму грн.
PAM8302AADCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2...5.5V DC
Mounting: SMD
Case: SO8
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2.5W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2...5.5V DC
Mounting: SMD
Case: SO8
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2.5W
на замовлення 1740 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.91 грн |
12+ | 32.26 грн |
54+ | 16.94 грн |
146+ | 16.09 грн |
250+ | 16.02 грн |
1000+ | 15.40 грн |
PAM8302AASCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Number of channels: 1
Output power: 2.5W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Number of channels: 1
Output power: 2.5W
товару немає в наявності
В кошику
од. на суму грн.
PAM8302AAYCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Number of channels: 1
Output power: 2.5W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Number of channels: 1
Output power: 2.5W
товару немає в наявності
В кошику
од. на суму грн.