Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78528) > Сторінка 1265 з 1309
Фото | Назва | Виробник | Інформація |
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DMT6012LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 8.4A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.84W Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 65A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMT6013LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 6.5A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMT6015LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Gate charge: 18.9nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 60A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC847CQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC847CT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 1173 шт: термін постачання 21-30 дні (днів) |
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BC847CW-13-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC847CW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
на замовлення 2058 шт: термін постачання 21-30 дні (днів) |
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BAT54STQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT54SW-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT54SW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
на замовлення 5723 шт: термін постачання 21-30 дні (днів) |
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BAT54SWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 1V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Application: automotive industry |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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B240-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 1915 шт: термін постачання 21-30 дні (днів) |
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BC847BT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 19159 шт: термін постачання 21-30 дні (днів) |
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DMTH6004SK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252 Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
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PAM8620TR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC Operating temperature: -40...125°C Integrated circuit features: low distortion THD; low noise; stereo Kind of package: reel; tape Amplifier class: D Voltage supply range: 8...26V DC Mounting: SMD Case: QFN32 Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 15W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAV99Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BAV99T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.155A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT523 Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DMP3098LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8 Case: SO8 Drain-source voltage: -30V Drain current: -3.3A On-state resistance: 65mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -15A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MBRD20100CT-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel Type of diode: Schottky rectifying Case: TO252/DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: reel Max. forward impulse current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ12CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2533 шт: термін постачання 21-30 дні (днів) |
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HD01-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP Case: MiniDIP Kind of package: reel; tape Electrical mounting: SMT Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 0.8A Max. forward impulse current: 30A |
на замовлення 4179 шт: термін постачання 21-30 дні (днів) |
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BAT54AWQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZTL431AQFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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LMV358M8G-13 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1MHz Open-loop gain: 10dB Operating voltage: 2.7...5.5V Mounting: SMT Number of channels: 2 Case: MSOP8 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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FZT600TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 250MHz |
на замовлення 883 шт: термін постачання 21-30 дні (днів) |
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ZTX653 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO92 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 175MHz |
на замовлення 4142 шт: термін постачання 21-30 дні (днів) |
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ZTX653STZ | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO92 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 175MHz |
на замовлення 1624 шт: термін постачання 21-30 дні (днів) |
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DMG6402LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26 Case: TSOT26 Drain-source voltage: 30V Drain current: 5A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 2330 шт: термін постачання 21-30 дні (днів) |
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ZTL432AFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 1544 шт: термін постачання 21-30 дні (днів) |
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SMAJ58CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3495 шт: термін постачання 21-30 дні (днів) |
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DMT3020LFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT3020LFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT3020LFDBQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT3020LFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT3020LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT3020LFDFQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT3020LFDFQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMT3020LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 32mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMT3020UFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 35A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMT30M9LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 160.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Case: PowerDI5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74HCT138S16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Mounting: SMD Case: SO16 Family: HCT Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS; TTL Number of inputs: 6 Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74HCT138T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Mounting: SMD Case: TSSOP16 Family: HCT Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS; TTL Number of inputs: 6 Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC857BT-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 8057 шт: термін постачання 21-30 дні (днів) |
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BC857BTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC857BW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel Frequency: 200MHz Quantity in set/package: 3000pcs. |
на замовлення 5317 шт: термін постачання 21-30 дні (днів) |
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ADTC114EUAQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Application: automotive industry Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDTC114EUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Power dissipation: 0.2W Quantity in set/package: 3000pcs. |
на замовлення 4850 шт: термін постачання 21-30 дні (днів) |
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AP2138N-3.0TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD Type of integrated circuit: voltage regulator Input voltage: 2.5...6V Output voltage: 3V Output current: 0.25A Case: SOT23 Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: AP2138 Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% Voltage drop: 0.6V |
на замовлення 1473 шт: термін постачання 21-30 дні (днів) |
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DMMT3904W-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Kind of package: reel; tape Quantity in set/package: 3000pcs. Frequency: 300MHz Collector-emitter voltage: 40V Current gain: 30...300 Collector current: 0.2A Type of transistor: NPN x2 Power dissipation: 0.2W Polarisation: bipolar Mounting: SMD Case: SOT363 |
на замовлення 3110 шт: термін постачання 21-30 дні (днів) |
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DMG4800LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Drain-source voltage: 30V Drain current: 8.4A On-state resistance: 22mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: SO8 |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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74LVC2G14DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Operating temperature: -40...150°C Case: SOT363 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
74LVC2G14FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74LVC2G14FX4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN1409-6 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74LVC2G14FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC Type of integrated circuit: digital Operating temperature: -40...150°C Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74LVC2G14W6-7 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Operating temperature: -40...150°C Case: SOT26 Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of output: push-pull Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: inverter Family: LVC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP4015SK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252 Drain-source voltage: -40V Drain current: -30A On-state resistance: 15mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 3.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: TO252 |
на замовлення 2172 шт: термін постачання 21-30 дні (днів) |
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DMP4015SSSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8 Drain-source voltage: -40V Drain current: -8.8A On-state resistance: 15mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.45W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: SO8 |
на замовлення 2092 шт: термін постачання 21-30 дні (днів) |
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74LVC1G17FW4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74LVC1G17FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74LVC1G17SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 200µA Kind of input: with Schmitt trigger Manufacturer series: LVC Kind of output: push-pull |
на замовлення 2358 шт: термін постачання 21-30 дні (днів) |
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DMT6012LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMT6013LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
DMT6015LFV-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
BC847CQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
BC847CT-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 1173 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.68 грн |
50+ | 7.62 грн |
64+ | 5.91 грн |
148+ | 2.53 грн |
673+ | 1.31 грн |
BC847CW-13-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
BC847CW-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 2058 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.86 грн |
63+ | 5.98 грн |
76+ | 4.93 грн |
145+ | 2.59 грн |
730+ | 1.20 грн |
2010+ | 1.14 грн |
BAT54STQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BAT54SW-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
товару немає в наявності
В кошику
од. на суму грн.
BAT54SW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 5723 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
58+ | 6.50 грн |
70+ | 5.38 грн |
100+ | 3.90 грн |
535+ | 1.64 грн |
1471+ | 1.55 грн |
BAT54SWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Application: automotive industry
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
58+ | 6.50 грн |
74+ | 5.08 грн |
100+ | 4.51 грн |
351+ | 2.51 грн |
B240-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 1915 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
29+ | 13.23 грн |
100+ | 8.38 грн |
213+ | 4.11 грн |
585+ | 3.89 грн |
BC847BT-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 19159 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
61+ | 6.20 грн |
88+ | 4.28 грн |
106+ | 3.56 грн |
500+ | 2.09 грн |
673+ | 1.31 грн |
1852+ | 1.23 грн |
DMTH6004SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 80.50 грн |
6+ | 65.03 грн |
16+ | 57.56 грн |
43+ | 53.82 грн |
500+ | 52.32 грн |
PAM8620TR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 8...26V DC
Mounting: SMD
Case: QFN32
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 15W; Ch: 2; Amp.class: D; QFN32; 8÷26VDC
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 8...26V DC
Mounting: SMD
Case: QFN32
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
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BAV99Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 24 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
BAV99T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT523
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.93 грн |
35+ | 10.76 грн |
100+ | 5.40 грн |
451+ | 1.95 грн |
1238+ | 1.85 грн |
DMP3098LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.3A; Idm: -15A; 1.8W; SO8
Case: SO8
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
Mounting: SMD
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MBRD20100CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; SMD; 100V; 10Ax2; reel
Type of diode: Schottky rectifying
Case: TO252/DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel
Max. forward impulse current: 150A
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SMBJ12CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷15.3V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2533 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.15 грн |
24+ | 15.77 грн |
100+ | 10.69 грн |
159+ | 5.53 грн |
437+ | 5.23 грн |
HD01-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.8A; Ifsm: 30A; MiniDIP
Case: MiniDIP
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.8A
Max. forward impulse current: 30A
на замовлення 4179 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.00 грн |
21+ | 18.16 грн |
100+ | 12.26 грн |
102+ | 8.52 грн |
281+ | 8.07 грн |
3000+ | 7.77 грн |
BAT54AWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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ZTL431AQFTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 31.40 грн |
22+ | 17.49 грн |
25+ | 15.10 грн |
LMV358M8G-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; MSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Operating voltage: 2.7...5.5V
Mounting: SMT
Number of channels: 2
Case: MSOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
на замовлення 160 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 58.76 грн |
10+ | 38.12 грн |
12+ | 31.84 грн |
85+ | 10.39 грн |
FZT600TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 883 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 45.08 грн |
12+ | 32.07 грн |
45+ | 20.26 грн |
122+ | 19.14 грн |
ZTX653 |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
на замовлення 4142 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.57 грн |
36+ | 24.67 грн |
98+ | 23.17 грн |
2000+ | 22.42 грн |
ZTX653STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
на замовлення 1624 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.64 грн |
10+ | 47.91 грн |
36+ | 24.74 грн |
98+ | 23.40 грн |
1000+ | 22.72 грн |
DMG6402LVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.37 грн |
24+ | 16.07 грн |
30+ | 12.78 грн |
100+ | 9.04 грн |
169+ | 5.16 грн |
466+ | 4.86 грн |
ZTL432AFTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 1544 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 28.98 грн |
26+ | 14.80 грн |
100+ | 9.57 грн |
120+ | 7.33 грн |
330+ | 6.88 грн |
1000+ | 6.65 грн |
SMAJ58CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3495 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 17.71 грн |
30+ | 12.71 грн |
37+ | 10.24 грн |
100+ | 7.18 грн |
205+ | 4.26 грн |
563+ | 4.04 грн |
DMT3020LFDB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
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DMT3020LFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
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DMT3020LFDBQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
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DMT3020LFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
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DMT3020LFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
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DMT3020LFDFQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
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DMT3020LFDFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
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DMT3020LSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
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DMT3020UFDB-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
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DMT30M9LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
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74HCT138S16-13 |
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Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: SO16
Family: HCT
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -40...150°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: SO16
Family: HCT
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -40...150°C
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74HCT138T16-13 |
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Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP16
Family: HCT
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -40...150°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP16
Family: HCT
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -40...150°C
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BC857BT-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 8057 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
61+ | 6.13 грн |
76+ | 4.93 грн |
156+ | 2.41 грн |
673+ | 1.31 грн |
1850+ | 1.24 грн |
BC857BTQ-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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BC857BW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel
Frequency: 200MHz
Quantity in set/package: 3000pcs.
на замовлення 5317 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.05 грн |
84+ | 4.48 грн |
116+ | 3.24 грн |
133+ | 2.81 грн |
500+ | 1.99 грн |
730+ | 1.20 грн |
2010+ | 1.14 грн |
ADTC114EUAQ-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 30
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DDTC114EUA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
на замовлення 4850 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
44+ | 9.34 грн |
67+ | 5.61 грн |
81+ | 4.63 грн |
112+ | 3.35 грн |
535+ | 1.64 грн |
1471+ | 1.55 грн |
AP2138N-3.0TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Type of integrated circuit: voltage regulator
Input voltage: 2.5...6V
Output voltage: 3V
Output current: 0.25A
Case: SOT23
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP2138
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Voltage drop: 0.6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23; SMD
Type of integrated circuit: voltage regulator
Input voltage: 2.5...6V
Output voltage: 3V
Output current: 0.25A
Case: SOT23
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP2138
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Voltage drop: 0.6V
на замовлення 1473 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 33.81 грн |
20+ | 19.14 грн |
25+ | 16.00 грн |
100+ | 12.26 грн |
141+ | 6.20 грн |
387+ | 5.91 грн |
DMMT3904W-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
на замовлення 3110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.12 грн |
31+ | 12.11 грн |
50+ | 9.57 грн |
100+ | 8.75 грн |
153+ | 5.76 грн |
421+ | 5.46 грн |
DMG4800LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 8.4A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
на замовлення 77 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.47 грн |
14+ | 28.33 грн |
62+ | 14.13 грн |
74LVC2G14DW-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT363
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT363
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
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74LVC2G14FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
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74LVC2G14FX4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
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74LVC2G14FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
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74LVC2G14W6-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT26
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SOT26
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: inverter
Family: LVC
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
DMP4015SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; 3.5W; TO252
Drain-source voltage: -40V
Drain current: -30A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: TO252
на замовлення 2172 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.46 грн |
10+ | 62.34 грн |
28+ | 31.40 грн |
77+ | 29.75 грн |
1000+ | 28.63 грн |
DMP4015SSSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.45W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.45W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
на замовлення 2092 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.72 грн |
10+ | 74.53 грн |
20+ | 44.48 грн |
55+ | 42.08 грн |
500+ | 40.44 грн |
74LVC1G17FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
товару немає в наявності
В кошику
од. на суму грн.
74LVC1G17FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
товару немає в наявності
В кошику
од. на суму грн.
74LVC1G17SE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Manufacturer series: LVC
Kind of output: push-pull
на замовлення 2358 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.10 грн |
36+ | 10.46 грн |
44+ | 8.52 грн |
100+ | 4.04 грн |
408+ | 2.16 грн |
1121+ | 2.04 грн |