Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78528) > Сторінка 1264 з 1309
Фото | Назва | Виробник | Інформація |
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B530C-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Capacitance: 300pF Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2753 шт: термін постачання 21-30 дні (днів) |
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B540CQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 100A Semiconductor structure: single diode Case: SMC Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Application: automotive industry Reverse recovery time: 16ns Max. forward voltage: 0.55V Capacitance: 300pF Load current: 5A |
на замовлення 2182 шт: термін постачання 21-30 дні (днів) |
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AP2171WG-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Output current: 1A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Case: SOT25 Mounting: SMD Kind of integrated circuit: high-side; USB switch On-state resistance: 95mΩ |
на замовлення 7338 шт: термін постачання 21-30 дні (днів) |
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74AHCT125S14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AHCT; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: AHCT |
на замовлення 917 шт: термін постачання 21-30 дні (днів) |
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74AHCT125T14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; AHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Manufacturer series: AHCT Quiescent current: 40µA |
на замовлення 2783 шт: термін постачання 21-30 дні (днів) |
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BZX84C9V1-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 9.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 5880 шт: термін постачання 21-30 дні (днів) |
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PAM2841SR | DIODES INCORPORATED |
![]() Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Output current: 10...40mA Case: MSOP8 Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Operating voltage: 2.8...5.5V DC |
на замовлення 2195 шт: термін постачання 21-30 дні (днів) |
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PAM2804AAB010 | DIODES INCORPORATED |
![]() Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Output current: 1A Case: TSOT25 Mounting: SMD Topology: buck Number of channels: 1 Operating temperature: -40...85°C Integrated circuit features: PWM Operating voltage: 2.5...6V DC |
на замовлення 1785 шт: термін постачання 21-30 дні (днів) |
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BSN20-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 5702 шт: термін постачання 21-30 дні (днів) |
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1N4148WT-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.25A Semiconductor structure: single diode Kind of package: reel; tape Case: SOD523 Max. forward voltage: 1V Reverse recovery time: 4ns Features of semiconductor devices: small signal |
на замовлення 4288 шт: термін постачання 21-30 дні (днів) |
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1N4148WTQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.715V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.125A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD523 Max. forward voltage: 0.715V Max. load current: 0.25A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry Capacitance: 2pF |
на замовлення 204 шт: термін постачання 21-30 дні (днів) |
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AP7361C-18SP-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1% Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: 1.8V Output current: 1A Voltage drop: 0.7V Input voltage: 2.2...6V Integrated circuit features: shutdown mode control input Manufacturer series: AP7361C Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ30CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
на замовлення 4881 шт: термін постачання 21-30 дні (днів) |
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SMAJ30CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP2156SG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD Supply voltage: 2.7...5.5V DC Output current: 0.5A Type of integrated circuit: power switch Number of channels: 2 Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Case: SO8 Mounting: SMD Kind of integrated circuit: high-side; USB switch On-state resistance: 90mΩ |
на замовлення 2441 шт: термін постачання 21-30 дні (днів) |
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MMDT5551-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363 Case: SOT363 Frequency: 300MHz Collector-emitter voltage: 160V Current gain: 80...250 Collector current: 0.2A Type of transistor: NPN x2 Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Mounting: SMD |
на замовлення 469 шт: термін постачання 21-30 дні (днів) |
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DMMT5551-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Case: SOT26 Frequency: 100...300MHz Collector-emitter voltage: 160V Current gain: 50...250 Collector current: 0.2A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Mounting: SMD |
на замовлення 412 шт: термін постачання 21-30 дні (днів) |
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MMST5551-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323 Case: SOT323 Frequency: 300MHz Collector-emitter voltage: 160V Current gain: 80...250 Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Mounting: SMD |
на замовлення 1350 шт: термін постачання 21-30 дні (днів) |
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AP7363-25D-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.24V Output voltage: 2.5V Output current: 1.5A Case: DPAK Mounting: SMD Manufacturer series: AP7363 Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAS70-05Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Application: automotive industry Capacitance: 2pF Reverse recovery time: 5ns Leakage current: 0.1µA Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS70-05Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Application: automotive industry Capacitance: 2pF Reverse recovery time: 5ns Leakage current: 0.1µA Power dissipation: 0.2W |
на замовлення 2940 шт: термін постачання 21-30 дні (днів) |
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BAS70-05T-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT523 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Capacitance: 2pF Reverse recovery time: 5ns Leakage current: 0.1µA Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMG3402L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 641 шт: термін постачання 21-30 дні (днів) |
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DMG3406L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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SMAJ26A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4205 шт: термін постачання 21-30 дні (днів) |
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ZXTR2005Z-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 38mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Input voltage: 10...100V |
на замовлення 1506 шт: термін постачання 21-30 дні (днів) |
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BSS84Q-13-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS84Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2327 шт: термін постачання 21-30 дні (днів) |
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BSS84W-7-F | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 11346 шт: термін постачання 21-30 дні (днів) |
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BZT52C9V1-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOD123 Kind of package: reel; tape Zener voltage: 9.1V Power dissipation: 0.37W Tolerance: ±6% |
на замовлення 1933 шт: термін постачання 21-30 дні (днів) |
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BC858A-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. Frequency: 200MHz Collector-emitter voltage: 30V Current gain: 125...250 Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC858AW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. Frequency: 200MHz Collector-emitter voltage: 30V Current gain: 125...250 Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC858C-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
на замовлення 2120 шт: термін постачання 21-30 дні (днів) |
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BC858CW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAW56T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 75mA Reverse recovery time: 4ns Semiconductor structure: common anode; double Capacitance: 1.5pF Case: SOT523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 744 шт: термін постачання 21-30 дні (днів) |
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BAW56W-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT323 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A Features of semiconductor devices: small signal |
на замовлення 4598 шт: термін постачання 21-30 дні (днів) |
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MMST2222A-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 600mA; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT593TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23 Quantity in set/package: 3000pcs. Frequency: 50MHz Collector-emitter voltage: 100V Collector current: 1A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 2773 шт: термін постачання 21-30 дні (днів) |
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FMMT597TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23 Quantity in set/package: 3000pcs. Frequency: 75MHz Collector-emitter voltage: 300V Collector current: 0.2A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 1670 шт: термін постачання 21-30 дні (днів) |
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FMMT620TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23 Quantity in set/package: 3000pcs. Frequency: 160MHz Collector-emitter voltage: 80V Current gain: 10...900 Collector current: 1.5A Type of transistor: NPN Power dissipation: 0.625W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 1365 шт: термін постачання 21-30 дні (днів) |
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FMMT634TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.9A Power dissipation: 0.625W Case: SOT23 Current gain: 0.6k...60k Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT722TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23 Quantity in set/package: 3000pcs. Frequency: 200MHz Collector-emitter voltage: 70V Current gain: 300...470 Collector current: 1.5A Type of transistor: PNP Power dissipation: 0.625W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23 |
на замовлення 2607 шт: термін постачання 21-30 дні (днів) |
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BAS16LP-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DFN2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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BAS16Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
на замовлення 5575 шт: термін постачання 21-30 дні (днів) |
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AL5801W6-7 | DIODES INCORPORATED |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Output current: 0.35A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Integrated circuit features: PWM Operating voltage: 5...100V DC |
на замовлення 794 шт: термін постачання 21-30 дні (днів) |
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BC846BW-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC846BW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
на замовлення 3527 шт: термін постачання 21-30 дні (днів) |
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LM2903QS-13 | DIODES INCORPORATED |
![]() Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA Kind of output: open collector Kind of package: reel; tape Kind of comparator: universal Input offset current: 200nA Voltage supply range: ± 1...18V DC; 2...36V DC Mounting: SMT Operating temperature: -40...125°C Case: SO8 Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 15mV |
на замовлення 2302 шт: термін постачання 21-30 дні (днів) |
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BAV199WQ-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.16A Reverse recovery time: 3µs Semiconductor structure: double series Capacitance: 2pF Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 1A Kind of package: reel; tape Features of semiconductor devices: small signal Max. load current: 0.5A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54AW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 1V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS21Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape Application: automotive industry Max. load current: 0.4A |
на замовлення 3100 шт: термін постачання 21-30 дні (днів) |
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DMT6009LCT | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3 Case: TO220-3 Kind of package: tube Drain-source voltage: 60V Drain current: 29.8A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 80A Polarisation: unipolar Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6009LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 9A On-state resistance: 11.7mΩ Type of transistor: N-MOSFET Power dissipation: 2.08W Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 90A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6009LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 10.6A On-state resistance: 12.8mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 90A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6009LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 9.1A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 160A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMT6009LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 11.5A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
DMT6010LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 25A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Kind of channel: enhancement Gate-source voltage: ±20V Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6010LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain-source voltage: 60V Drain current: 11A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
DMT6010LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 11A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 125A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMT6011LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 8.5A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 85A Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
B530C-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2753 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.64 грн |
14+ | 26.84 грн |
66+ | 13.23 грн |
182+ | 12.56 грн |
B540CQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Capacitance: 300pF
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Capacitance: 300pF
Load current: 5A
на замовлення 2182 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.47 грн |
14+ | 28.40 грн |
15+ | 25.19 грн |
64+ | 13.83 грн |
175+ | 13.01 грн |
500+ | 12.93 грн |
1000+ | 12.56 грн |
AP2171WG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Case: SOT25
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Case: SOT25
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
On-state resistance: 95mΩ
на замовлення 7338 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 50.72 грн |
13+ | 30.20 грн |
15+ | 25.42 грн |
95+ | 9.19 грн |
261+ | 8.67 грн |
3000+ | 8.30 грн |
74AHCT125S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AHCT; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: AHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AHCT; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: AHCT
на замовлення 917 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 45.08 грн |
20+ | 19.51 грн |
100+ | 13.23 грн |
140+ | 6.35 грн |
384+ | 5.98 грн |
74AHCT125T14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AHCT
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; AHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AHCT
Quiescent current: 40µA
на замовлення 2783 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.28 грн |
15+ | 24.97 грн |
25+ | 20.48 грн |
100+ | 15.25 грн |
128+ | 6.88 грн |
352+ | 6.50 грн |
BZX84C9V1-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
57+ | 7.08 грн |
107+ | 3.51 грн |
124+ | 3.03 грн |
182+ | 2.06 грн |
721+ | 1.21 грн |
1979+ | 1.15 грн |
3000+ | 1.11 грн |
PAM2841SR |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 10...40mA
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Operating voltage: 2.8...5.5V DC
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 10÷40mA; MSOP8; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 10...40mA
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Operating voltage: 2.8...5.5V DC
на замовлення 2195 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.48 грн |
10+ | 41.86 грн |
38+ | 23.10 грн |
105+ | 21.90 грн |
1000+ | 21.00 грн |
PAM2804AAB010 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 1A
Case: TSOT25
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Integrated circuit features: PWM
Operating voltage: 2.5...6V DC
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output current: 1A
Case: TSOT25
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Integrated circuit features: PWM
Operating voltage: 2.5...6V DC
на замовлення 1785 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.91 грн |
14+ | 27.66 грн |
25+ | 24.44 грн |
54+ | 16.44 грн |
148+ | 15.55 грн |
1000+ | 15.40 грн |
BSN20-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 5702 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.32 грн |
30+ | 12.56 грн |
36+ | 10.39 грн |
56+ | 6.73 грн |
100+ | 5.42 грн |
228+ | 3.91 грн |
500+ | 3.74 грн |
626+ | 3.70 грн |
1000+ | 3.56 грн |
1N4148WT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SOD523
Max. forward voltage: 1V
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.25A; 4ns; SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SOD523
Max. forward voltage: 1V
Reverse recovery time: 4ns
Features of semiconductor devices: small signal
на замовлення 4288 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.88 грн |
97+ | 3.89 грн |
125+ | 3.01 грн |
500+ | 2.41 грн |
583+ | 1.51 грн |
1603+ | 1.43 грн |
1N4148WTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 0.715V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.715V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 0.715V
Max. load current: 0.25A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
на замовлення 204 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.05 грн |
65+ | 5.76 грн |
100+ | 4.22 грн |
AP7361C-18SP-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 1.8V
Output current: 1A
Voltage drop: 0.7V
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 1.8V
Output current: 1A
Voltage drop: 0.7V
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7361C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
товару немає в наявності
В кошику
од. на суму грн.
SMAJ30CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 4881 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.93 грн |
30+ | 12.56 грн |
50+ | 8.57 грн |
100+ | 7.35 грн |
198+ | 4.42 грн |
544+ | 4.18 грн |
SMAJ30CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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AP2156SG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
On-state resistance: 90mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
On-state resistance: 90mΩ
на замовлення 2441 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.16 грн |
10+ | 40.96 грн |
25+ | 34.83 грн |
39+ | 22.50 грн |
107+ | 21.30 грн |
MMDT5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Case: SOT363
Frequency: 300MHz
Collector-emitter voltage: 160V
Current gain: 80...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 200mW; SOT363
Case: SOT363
Frequency: 300MHz
Collector-emitter voltage: 160V
Current gain: 80...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
на замовлення 469 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.68 грн |
45+ | 8.45 грн |
58+ | 6.46 грн |
100+ | 5.81 грн |
258+ | 3.39 грн |
DMMT5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
на замовлення 412 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.78 грн |
26+ | 14.58 грн |
50+ | 10.17 грн |
100+ | 8.82 грн |
132+ | 6.65 грн |
363+ | 6.28 грн |
MMST5551-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323
Case: SOT323
Frequency: 300MHz
Collector-emitter voltage: 160V
Current gain: 80...250
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.2A; 200mW; SOT323
Case: SOT323
Frequency: 300MHz
Collector-emitter voltage: 160V
Current gain: 80...250
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Mounting: SMD
на замовлення 1350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.88 грн |
48+ | 7.92 грн |
100+ | 5.49 грн |
351+ | 2.50 грн |
966+ | 2.35 грн |
AP7363-25D-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.5V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.5V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
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В кошику
од. на суму грн.
BAS70-05Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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од. на суму грн.
BAS70-05Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.88 грн |
47+ | 8.00 грн |
58+ | 6.49 грн |
100+ | 5.88 грн |
294+ | 2.98 грн |
808+ | 2.81 грн |
BAS70-05T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
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В кошику
од. на суму грн.
DMG3402L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 641 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.56 грн |
22+ | 17.04 грн |
27+ | 13.90 грн |
50+ | 11.96 грн |
100+ | 10.24 грн |
155+ | 5.61 грн |
425+ | 5.31 грн |
DMG3406L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.15 грн |
35+ | 10.69 грн |
100+ | 6.63 грн |
219+ | 4.01 грн |
601+ | 3.79 грн |
SMAJ26A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4205 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.12 грн |
31+ | 12.41 грн |
100+ | 4.12 грн |
224+ | 3.90 грн |
616+ | 3.69 грн |
ZXTR2005Z-13 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
на замовлення 1506 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.10 грн |
13+ | 29.15 грн |
16+ | 23.99 грн |
50+ | 15.92 грн |
79+ | 11.14 грн |
216+ | 10.54 грн |
650+ | 10.17 грн |
BSS84Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику
од. на суму грн.
BSS84Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2327 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.27 грн |
50+ | 7.48 грн |
61+ | 6.20 грн |
95+ | 3.95 грн |
114+ | 3.30 грн |
329+ | 2.68 грн |
500+ | 2.44 грн |
BSS84W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.2W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 11346 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
37+ | 10.17 грн |
100+ | 6.99 грн |
269+ | 3.27 грн |
740+ | 3.09 грн |
3000+ | 2.98 грн |
BZT52C9V1-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.37W
Tolerance: ±6%
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.37W
Tolerance: ±6%
на замовлення 1933 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.20 грн |
81+ | 4.63 грн |
106+ | 3.53 грн |
167+ | 2.25 грн |
777+ | 1.13 грн |
BC858A-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Collector-emitter voltage: 30V
Current gain: 125...250
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Collector-emitter voltage: 30V
Current gain: 125...250
Collector current: 0.1A
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од. на суму грн.
BC858AW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Collector-emitter voltage: 30V
Current gain: 125...250
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Collector-emitter voltage: 30V
Current gain: 125...250
Collector current: 0.1A
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BC858C-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
на замовлення 2120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.08 грн |
47+ | 8.07 грн |
59+ | 6.35 грн |
144+ | 2.60 грн |
817+ | 1.09 грн |
BC858CW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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В кошику
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BAW56T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 75mA; 4ns; SOT523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 75mA
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 744 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.27 грн |
51+ | 7.40 грн |
107+ | 3.51 грн |
500+ | 2.28 грн |
583+ | 1.51 грн |
BAW56W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT323; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Features of semiconductor devices: small signal
на замовлення 4598 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.24 грн |
71+ | 5.31 грн |
83+ | 4.52 грн |
128+ | 2.94 грн |
500+ | 2.03 грн |
645+ | 1.37 грн |
1772+ | 1.29 грн |
MMST2222A-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 600mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 600mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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од. на суму грн.
FMMT593TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Collector-emitter voltage: 100V
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 50MHz
Collector-emitter voltage: 100V
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 2773 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.59 грн |
21+ | 18.24 грн |
50+ | 13.53 грн |
100+ | 11.89 грн |
109+ | 8.07 грн |
299+ | 7.62 грн |
1000+ | 7.48 грн |
FMMT597TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 75MHz
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 500mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 75MHz
Collector-emitter voltage: 300V
Collector current: 0.2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 1670 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 33.81 грн |
17+ | 22.20 грн |
50+ | 17.94 грн |
100+ | 16.37 грн |
109+ | 8.07 грн |
299+ | 7.62 грн |
FMMT620TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 160MHz
Collector-emitter voltage: 80V
Current gain: 10...900
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 160MHz
Collector-emitter voltage: 80V
Current gain: 10...900
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 1365 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.91 грн |
14+ | 27.96 грн |
74+ | 11.81 грн |
203+ | 11.21 грн |
FMMT634TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.625W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.9A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.9A
Power dissipation: 0.625W
Case: SOT23
Current gain: 0.6k...60k
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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FMMT722TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Collector-emitter voltage: 70V
Current gain: 300...470
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 70V; 1.5A; 625mW; SOT23
Quantity in set/package: 3000pcs.
Frequency: 200MHz
Collector-emitter voltage: 70V
Current gain: 300...470
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 0.625W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
на замовлення 2607 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 31.40 грн |
20+ | 19.66 грн |
66+ | 13.31 грн |
181+ | 12.56 грн |
500+ | 12.26 грн |
1000+ | 12.03 грн |
BAS16LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; DFN2; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 210 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
41+ | 9.98 грн |
61+ | 6.13 грн |
75+ | 5.04 грн |
100+ | 4.67 грн |
BAS16Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
на замовлення 5575 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.54 грн |
225+ | 1.74 грн |
500+ | 1.64 грн |
650+ | 1.36 грн |
1800+ | 1.29 грн |
AL5801W6-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: PWM
Operating voltage: 5...100V DC
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 350mA; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 0.35A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: PWM
Operating voltage: 5...100V DC
на замовлення 794 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.16 грн |
15+ | 26.69 грн |
56+ | 16.00 грн |
152+ | 15.10 грн |
500+ | 14.95 грн |
BC846BW-13-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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од. на суму грн.
BC846BW-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
на замовлення 3527 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.46 грн |
68+ | 5.53 грн |
134+ | 2.80 грн |
726+ | 1.22 грн |
1997+ | 1.15 грн |
LM2903QS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 200nA
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
на замовлення 2302 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.78 грн |
23+ | 16.82 грн |
28+ | 13.46 грн |
100+ | 9.72 грн |
117+ | 7.55 грн |
320+ | 7.18 грн |
500+ | 6.95 грн |
BAV199WQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.5A
Application: automotive industry
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од. на суму грн.
BAT54AW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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од. на суму грн.
BAS21Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
на замовлення 3100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
150+ | 2.87 грн |
200+ | 1.94 грн |
500+ | 1.71 грн |
575+ | 1.58 грн |
1550+ | 1.50 грн |
DMT6009LCT |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Drain-source voltage: 60V
Drain current: 29.8A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Drain-source voltage: 60V
Drain current: 29.8A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Polarisation: unipolar
Mounting: THT
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од. на суму грн.
DMT6009LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Polarisation: unipolar
Mounting: SMD
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DMT6009LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 10.6A
On-state resistance: 12.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 10.6A
On-state resistance: 12.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
Polarisation: unipolar
Mounting: SMD
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DMT6009LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 160A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 160A
Polarisation: unipolar
Mounting: SMD
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DMT6009LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
Polarisation: unipolar
Mounting: SMD
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DMT6010LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 25A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 25A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
Mounting: SMD
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DMT6010LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Polarisation: unipolar
Mounting: SMD
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DMT6010LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 125A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 125A
Polarisation: unipolar
Mounting: SMD
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DMT6011LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
Polarisation: unipolar
Mounting: SMD
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