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74LVC1G86FW5-7 DIODES INCORPORATED 74LVC1G86.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BFE0D3&compId=74LVC1G86.pdf?ci_sign=e37eee16c2df66506fda39b8e26fbac54b031bb0 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86QW5-7 DIODES INCORPORATED 74LVC1G86Q.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86Z-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80C2E0D3&compId=74LVC1G86.pdf?ci_sign=7bc3a9b56817ed239d9d56bcac2cd337af1d7079 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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ES3AB-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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B1100B-13-F B1100B-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD2AADF2C20748&compId=b170-1100b.pdf?ci_sign=393d5ab44cc1edf51a51955c87e9a2fea7f0d6d9 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
на замовлення 1816 шт:
термін постачання 21-30 дні (днів)
16+27.23 грн
34+11.57 грн
100+8.51 грн
163+5.59 грн
447+5.29 грн
Мінімальне замовлення: 16
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B1100Q-13-F B1100Q-13-F DIODES INCORPORATED B170Q-B1100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
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TB1100H-13-F DIODES INCORPORATED ds30360.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 90V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 130V
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SMBJ78A-13-F SMBJ78A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC1G34QSE-7 DIODES INCORPORATED 74LVC1G34Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
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74LVC1G34QW5-7 DIODES INCORPORATED 74LVC1G34Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
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P6SMAJ54ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC3G07SS8-7 DIODES INCORPORATED 74LVC3G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SSOP8
Number of inputs: 3
Supply voltage: 1.65...5.5V DC
Number of channels: 3
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Family: LVC
Mounting: SMD
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AP2141MPG-13
+1
 		AP2141MPG-13 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
на замовлення 942 шт:
термін постачання 21-30 дні (днів)
5+102.34 грн
10+51.50 грн
66+13.87 грн
179+13.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SBR2045CT-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR2045CTFP-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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AP7176BMP-13 DIODES INCORPORATED AP7176B.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Output voltage: 0.8...3.12V
Output current: 3A
Voltage drop: 530mV
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...3.65V
Manufacturer series: AP7176B
Kind of voltage regulator: adjustable; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±1.5%
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MMBZ5238B-7-F DIODES INCORPORATED ds18011.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.7V; SMD; reel,tape; SOT23; single diode
Semiconductor structure: single diode
Zener voltage: 8.7V
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOT23
Tolerance: ±5%
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DCX123JU-7-F DCX123JU-7-F DIODES INCORPORATED DCX_XXXX_U.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50/50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50/50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
на замовлення 1218 шт:
термін постачання 21-30 дні (днів)
45+9.24 грн
73+5.29 грн
85+4.52 грн
110+3.49 грн
388+2.33 грн
1067+2.21 грн
Мінімальне замовлення: 45
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SMCJ36A-13-F SMCJ36A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FCX619TA DIODES INCORPORATED FCX619.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
Current gain: 30...400
Pulsed collector current: 6A
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FCX605TA FCX605TA DIODES INCORPORATED FCX605.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 900mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 0.9W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Kind of transistor: Darlington
Current gain: 2000...100000
на замовлення 642 шт:
термін постачання 21-30 дні (днів)
7+63.55 грн
11+37.86 грн
50+18.47 грн
135+17.47 грн
Мінімальне замовлення: 7
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FCX617TA DIODES INCORPORATED FCX617.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80...120MHz
Current gain: 80...415
Pulsed collector current: 12A
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FCX658ATA DIODES INCORPORATED FCX658A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 35...170
Pulsed collector current: 1A
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FCX688BTA DIODES INCORPORATED FCX688B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 3A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 3A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 100...500
Pulsed collector current: 10A
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ZXMS6004FFQTA DIODES INCORPORATED ZXMS6004FFQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
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ZXMS6004FFQ-7 DIODES INCORPORATED ZXMS6004FFQ-7.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DGTA ZXMS6004DGTA DIODES INCORPORATED ZXMS6004DG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Operating temperature: -40...125°C
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
4+104.81 грн
10+63.07 грн
23+39.54 грн
63+37.40 грн
1000+35.94 грн
Мінімальне замовлення: 4
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ZXMS6004SGTA ZXMS6004SGTA DIODES INCORPORATED ZXMS6004SG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
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ZXMS6004DT8TA DIODES INCORPORATED ZXMS6004DT8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.2A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DGQ-13 DIODES INCORPORATED ZXMS6004DGQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004N8-13 DIODES INCORPORATED ZXMS6004N8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
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ZXMS6004N8Q-13 DIODES INCORPORATED ZXMS6004N8Q.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
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ZXMS6004SGQTA DIODES INCORPORATED ZXMS6004SGQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
1000+33.92 грн
Мінімальне замовлення: 1000
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DMP3026SFDE-13 DIODES INCORPORATED DMP3026SFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDE-7 DIODES INCORPORATED DMP3026SFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-13 DIODES INCORPORATED DMP3026SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-7 DIODES INCORPORATED DMP3026SFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAV99DWQ-7-F BAV99DWQ-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985810758EC4D98BF&compId=BAV99DWQ.pdf?ci_sign=8da9c6050e753815a52fd50d5ee8e3caf08c9700 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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ZXMN10A07ZTA ZXMN10A07ZTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C36EB8460EE749&compId=ZXMN10A07Z.pdf?ci_sign=d3abad8da629bc52d1e832144338ba29f2605247 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1562 шт:
термін постачання 21-30 дні (днів)
9+49.52 грн
13+29.66 грн
50+23.37 грн
54+16.94 грн
147+16.02 грн
500+15.40 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FCX1047ATA DIODES INCORPORATED FCX1047A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 10V
Collector current: 4A
Case: SOT89
Current gain: 60...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 20A
Power dissipation: 2W
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FCX1051ATA DIODES INCORPORATED FCX1051A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 155MHz
Pulsed collector current: 10A
Power dissipation: 2W
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FCX1053ATA DIODES INCORPORATED FCX1053A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 10A
Power dissipation: 2W
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AP7365-10YG-13 AP7365-10YG-13 DIODES INCORPORATED AP7365.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1V
Output current: 0.6A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±2%
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ZXTP19100CZTA DIODES INCORPORATED ZXTP19100CZ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 142MHz
Pulsed collector current: 3A
Power dissipation: 4.46W
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BAT54LP-7 BAT54LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E731098CB34143&compId=BAT54LP.pdf?ci_sign=e935419e32d10145da12ed6f57f2facde4c361fc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
на замовлення 1255 шт:
термін постачання 21-30 дні (днів)
24+17.33 грн
36+10.81 грн
100+5.88 грн
338+2.67 грн
930+2.53 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SMAJ20A-13-F SMAJ20A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
28+14.86 грн
41+9.43 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMAJ200A-13-F SMAJ200A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
27+15.68 грн
38+10.27 грн
100+6.51 грн
226+4.01 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SMAJ200AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ20ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P6SMAJ20ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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DMG2301L-7 DIODES INCORPORATED DMG2301L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 171000 шт:
термін постачання 21-30 дні (днів)
3000+2.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52C10T-7 BZT52C10T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 2924 шт:
термін постачання 21-30 дні (днів)
36+11.55 грн
44+8.89 грн
50+7.74 грн
74+5.24 грн
100+4.41 грн
439+2.06 грн
1205+1.94 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZT52C10LP-7 BZT52C10LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194 Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 10V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
17+24.76 грн
23+17.32 грн
29+13.26 грн
100+8.05 грн
169+5.36 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BZT52C10Q-7-F BZT52C10Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C10SQ-7-F DIODES INCORPORATED ds30093.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C10TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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SMAJ78CA-13-F SMAJ78CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 86.7÷95.8V; 2.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ78CA-13-F SMBJ78CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC1G86FW5-7 74LVC1G86.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80BFE0D3&compId=74LVC1G86.pdf?ci_sign=e37eee16c2df66506fda39b8e26fbac54b031bb0
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86QW5-7 74LVC1G86Q.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G86Z-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FDC80C2E0D3&compId=74LVC1G86.pdf?ci_sign=7bc3a9b56817ed239d9d56bcac2cd337af1d7079
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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ES3AB-13-F ds14003.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 25ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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B1100B-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD2AADF2C20748&compId=b170-1100b.pdf?ci_sign=393d5ab44cc1edf51a51955c87e9a2fea7f0d6d9
B1100B-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
на замовлення 1816 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.23 грн
34+11.57 грн
100+8.51 грн
163+5.59 грн
447+5.29 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
B1100Q-13-F B170Q-B1100Q.pdf
B1100Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Capacitance: 80pF
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 5mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
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TB1100H-13-F ds30360.pdf
Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 90V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 130V
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SMBJ78A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ78A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC1G34QSE-7 74LVC1G34Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
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74LVC1G34QW5-7 74LVC1G34Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of inputs: 1
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P6SMAJ54ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC3G07SS8-7 74LVC3G07.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SSOP8
Number of inputs: 3
Supply voltage: 1.65...5.5V DC
Number of channels: 3
Kind of output: push-pull
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; inverter
Family: LVC
Mounting: SMD
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AP2141MPG-13 AP2141-51.pdf
AP2141MPG-13
+1
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
на замовлення 942 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.34 грн
10+51.50 грн
66+13.87 грн
179+13.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SBR2045CT-G SBR2045.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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SBR2045CTFP-G SBR2045.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Technology: SBR®
Max. load current: 20A
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AP7176BMP-13 AP7176B.pdf
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Output voltage: 0.8...3.12V
Output current: 3A
Voltage drop: 530mV
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...3.65V
Manufacturer series: AP7176B
Kind of voltage regulator: adjustable; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±1.5%
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MMBZ5238B-7-F ds18011.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 8.7V; SMD; reel,tape; SOT23; single diode
Semiconductor structure: single diode
Zener voltage: 8.7V
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOT23
Tolerance: ±5%
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DCX123JU-7-F DCX_XXXX_U.pdf
DCX123JU-7-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50/50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50/50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
на замовлення 1218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
45+9.24 грн
73+5.29 грн
85+4.52 грн
110+3.49 грн
388+2.33 грн
1067+2.21 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SMCJ36A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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FCX619TA FCX619.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
Current gain: 30...400
Pulsed collector current: 6A
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FCX605TA FCX605.pdf
FCX605TA
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 900mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 0.9W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Kind of transistor: Darlington
Current gain: 2000...100000
на замовлення 642 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.55 грн
11+37.86 грн
50+18.47 грн
135+17.47 грн
Мінімальне замовлення: 7
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FCX617TA FCX617.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80...120MHz
Current gain: 80...415
Pulsed collector current: 12A
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FCX658ATA FCX658A.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 35...170
Pulsed collector current: 1A
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FCX688BTA FCX688B.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 3A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 3A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 100...500
Pulsed collector current: 10A
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ZXMS6004FFQTA ZXMS6004FFQ.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
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ZXMS6004FFQ-7 ZXMS6004FFQ-7.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DGTA ZXMS6004DG.pdf
ZXMS6004DGTA
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Operating temperature: -40...125°C
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+104.81 грн
10+63.07 грн
23+39.54 грн
63+37.40 грн
1000+35.94 грн
Мінімальне замовлення: 4
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ZXMS6004SGTA ZXMS6004SG.pdf
ZXMS6004SGTA
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
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ZXMS6004DT8TA ZXMS6004DT8.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.2A; Ch: 2; N-Channel; SMD; SM8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SM8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004DGQ-13 ZXMS6004DGQ.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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ZXMS6004N8-13 ZXMS6004N8.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
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ZXMS6004N8Q-13 ZXMS6004N8Q.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
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ZXMS6004SGQTA ZXMS6004SGQ.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+33.92 грн
Мінімальне замовлення: 1000
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DMP3026SFDE-13 DMP3026SFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDE-7 DMP3026SFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.4A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-13 DMP3026SFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3026SFDF-7 DMP3026SFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.3A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 19.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAV99DWQ-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE985810758EC4D98BF&compId=BAV99DWQ.pdf?ci_sign=8da9c6050e753815a52fd50d5ee8e3caf08c9700
BAV99DWQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.215A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Capacitance: 2pF
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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ZXMN10A07ZTA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C36EB8460EE749&compId=ZXMN10A07Z.pdf?ci_sign=d3abad8da629bc52d1e832144338ba29f2605247
ZXMN10A07ZTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.5W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1562 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.52 грн
13+29.66 грн
50+23.37 грн
54+16.94 грн
147+16.02 грн
500+15.40 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FCX1047ATA FCX1047A.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 4A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 10V
Collector current: 4A
Case: SOT89
Current gain: 60...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 20A
Power dissipation: 2W
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FCX1051ATA FCX1051A.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 155MHz
Pulsed collector current: 10A
Power dissipation: 2W
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FCX1053ATA FCX1053A.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 75V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 75V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Pulsed collector current: 10A
Power dissipation: 2W
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AP7365-10YG-13 AP7365.pdf
AP7365-10YG-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1V
Output current: 0.6A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Tolerance: ±2%
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ZXTP19100CZTA ZXTP19100CZ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 142MHz
Pulsed collector current: 3A
Power dissipation: 4.46W
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BAT54LP-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E731098CB34143&compId=BAT54LP.pdf?ci_sign=e935419e32d10145da12ed6f57f2facde4c361fc
BAT54LP-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
на замовлення 1255 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.33 грн
36+10.81 грн
100+5.88 грн
338+2.67 грн
930+2.53 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SMAJ20A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ20A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+14.86 грн
41+9.43 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMAJ200A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ200A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+15.68 грн
38+10.27 грн
100+6.51 грн
226+4.01 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SMAJ200AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ20ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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P6SMAJ20ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷25.5V; 18.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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DMG2301L-7 DMG2301L.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 171000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52C10T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C10T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 2924 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.55 грн
44+8.89 грн
50+7.74 грн
74+5.24 грн
100+4.41 грн
439+2.06 грн
1205+1.94 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZT52C10LP-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4F78D984B0A18&compId=BZT52CxxLP_ser.pdf?ci_sign=e704d5896732ab8b8ab3bad7971ecd9b6f855194
BZT52C10LP-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 10V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.76 грн
23+17.32 грн
29+13.26 грн
100+8.05 грн
169+5.36 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BZT52C10Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C10Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C10SQ-7-F ds30093.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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BZT52C10TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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SMAJ78CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ78CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 86.7÷95.8V; 2.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ78CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ78CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 86.7÷99.7V; 4.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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