Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78783) > Сторінка 1311 з 1314
Фото | Назва | Виробник | Інформація |
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DDZ9692-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Power dissipation: 0.5W Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DDZ9692T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.15W; 6.8V; SMD; reel,tape; SOD523; single diode Kind of package: reel; tape Power dissipation: 0.15W Type of diode: Zener Mounting: SMD Case: SOD523 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DDZ9692TQ-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 6.8V; SMD; reel,tape; SOD523; single diode Kind of package: reel; tape Power dissipation: 0.15W Type of diode: Zener Mounting: SMD Case: SOD523 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DDZ9691-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.2V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener |
на замовлення 1766 шт: термін постачання 21-30 дні (днів) |
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ZXTC2045E6TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 30V Collector current: 1.5A Power dissipation: 1.7W Case: SOT26 Current gain: 180...500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 195MHz; 265MHz Pulsed collector current: 5A |
на замовлення 2868 шт: термін постачання 21-30 дні (днів) |
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AP7331-18SNG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.55V Output voltage: 1.8V Output current: 0.3A Case: DFN6 Mounting: SMD Manufacturer series: AP7331 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AP7363-18D-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AP7363-33E-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SOT223; SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AP7363-HA-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.5A; uDFN8; SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZXTP25020CFHTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 20V; 4A; 1.81W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4A Power dissipation: 1.81W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 285MHz Current gain: 40...500 |
на замовлення 472 шт: термін постачання 21-30 дні (днів) |
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ZXTN25020DFHTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4.5A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 215MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXTP25020CFFTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4.5A Power dissipation: 1.96W Case: SOT23F Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 285MHz Current gain: 40...500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C6V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 3437 шт: термін постачання 21-30 дні (днів) |
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BZX84C6V2TS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT363 Semiconductor structure: triple independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C6V2Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C6V2S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C6V2W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZX84B6V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZXTP25040DFHTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 3A; 730mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 0.73W Case: SOT23 Current gain: 300...900 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 270MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ58CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SMBJ58CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR180S1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 80V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 24A Kind of package: reel; tape |
на замовлення 910 шт: термін постачання 21-30 дні (днів) |
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ZXMP7A17GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -70V; -2.6A; Idm: -9.6A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -70V Drain current: -2.6A Pulsed drain current: -9.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 738 шт: термін постачання 21-30 дні (днів) |
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ZXMP7A17GQTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -70V; -1.6A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -70V Drain current: -1.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ZXMP10A17GQTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1.9A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -1.9A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ZXMP10A17GQTC | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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DMN6140LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 7 inch reel; tape Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.7W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN6140L-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 13 inch reel; tape Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.7W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN6140LQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Kind of package: 13 inch reel; tape Case: SOT23-3 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Gate charge: 8.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMN6140L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23 Kind of package: 7 inch reel; tape Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.7W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC858C-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
на замовлення 2120 шт: термін постачання 21-30 дні (днів) |
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BC858BW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC858CW-7-F | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZT52B15LP-7B | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; X1-DFN1006-2; 50nA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAT750-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.75A; reel,tape Case: SOT23 Max. off-state voltage: 40V Max. forward voltage: 0.49V Load current: 0.75A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 5046 шт: термін постачання 21-30 дні (днів) |
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DMTH4007LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252 Mounting: SMD Case: TO252 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 44A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET Power dissipation: 59W Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W Mounting: SMD Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 85A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 83.3W Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 340A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007SPD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 11.9A On-state resistance: 8.6mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 41.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W Mounting: SMD Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 13.1A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 41.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W Mounting: SMD Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 11A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.7W Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 340A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007LK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252 Mounting: SMD Case: TO252 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 13.9A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.6W Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007SPDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 11.9A On-state resistance: 8.6mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.6W Polarisation: unipolar Gate charge: 41.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP2305UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23 Case: SOT23 Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 113mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -10A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2305UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W Case: TSOT26 Drain-source voltage: -20V Drain current: -2.98A On-state resistance: 113mΩ Type of transistor: P-MOSFET Power dissipation: 1.64W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -16A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP7343D-25W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD Manufacturer series: AP7343 Output current: 0.3A Mounting: SMD Operating temperature: -40...85°C Input voltage: 1.7...5.25V Integrated circuit features: output discharge; shutdown mode control input Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT25 Tolerance: ±1% Output voltage: 2.5V Voltage drop: 0.36V Type of integrated circuit: voltage regulator Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BAS299-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.3A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Case: SOT23 Kind of package: reel; tape Semiconductor structure: quadruple Reverse recovery time: 6ns Max. forward impulse current: 9A Max. forward voltage: 1.25V Features of semiconductor devices: small signal Max. load current: 0.9A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZVP0545GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -0.075A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Drain current: -0.075A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 150Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 737 шт: термін постачання 21-30 дні (днів) |
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US1A-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SMA; reel,tape Type of diode: rectifying Case: SMA Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52C3V0-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1227 шт: термін постачання 21-30 дні (днів) |
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DMG2302UK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.66W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1850 шт: термін постачання 21-30 дні (днів) |
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MMSZ5229B-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Zener voltage: 4.3V Power dissipation: 0.37/0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% |
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В кошику од. на суму грн. | ||||||||||||||
MMBZ5229B-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode Semiconductor structure: single diode Zener voltage: 4.3V Power dissipation: 0.35W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOT23 Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||||
MMBZ5229BW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode Semiconductor structure: single diode Zener voltage: 4.3V Power dissipation: 0.2W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOT323 Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMSZ5229BQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Zener voltage: 4.3V Application: automotive industry Power dissipation: 0.37/0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||||
DMC2053UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DMC3071LVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DMC3071LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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SMCJ40CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 23.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 630 шт: термін постачання 21-30 дні (днів) |
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AP7381-50SA-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 5V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP7381 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V |
на замовлення 1594 шт: термін постачання 21-30 дні (днів) |
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AP7381-33SA-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 3.3V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP7381 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V |
на замовлення 1706 шт: термін постачання 21-30 дні (днів) |
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DDZ9692-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
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DDZ9692T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 6.8V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Power dissipation: 0.15W
Type of diode: Zener
Mounting: SMD
Case: SOD523
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 6.8V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Power dissipation: 0.15W
Type of diode: Zener
Mounting: SMD
Case: SOD523
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
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DDZ9692TQ-7 |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 6.8V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Power dissipation: 0.15W
Type of diode: Zener
Mounting: SMD
Case: SOD523
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 6.8V; SMD; reel,tape; SOD523; single diode
Kind of package: reel; tape
Power dissipation: 0.15W
Type of diode: Zener
Mounting: SMD
Case: SOD523
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
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DDZ9691-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.2V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.2V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
на замовлення 1766 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.73 грн |
54+ | 7.20 грн |
64+ | 6.02 грн |
104+ | 3.70 грн |
521+ | 1.73 грн |
1431+ | 1.64 грн |
ZXTC2045E6TA |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 1.7W
Case: SOT26
Current gain: 180...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 195MHz; 265MHz
Pulsed collector current: 5A
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 1.7W
Case: SOT26
Current gain: 180...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 195MHz; 265MHz
Pulsed collector current: 5A
на замовлення 2868 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.34 грн |
14+ | 27.97 грн |
48+ | 18.93 грн |
132+ | 17.86 грн |
AP7331-18SNG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 1.8V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: AP7331
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 1.8V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: AP7331
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
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AP7363-18D-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD
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AP7363-33E-13 |
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SOT223; SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SOT223; SMD
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AP7363-HA-7 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5A; uDFN8; SMD
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5A; uDFN8; SMD
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ZXTP25020CFHTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 1.81W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4A; 1.81W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 1.81W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
на замовлення 472 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.44 грн |
12+ | 32.26 грн |
48+ | 19.08 грн |
130+ | 18.09 грн |
ZXTN25020DFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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ZXTP25020CFFTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.96W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 4.5A; 1.96W; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.96W
Case: SOT23F
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 285MHz
Current gain: 40...500
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BZX84C6V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3437 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.44 грн |
90+ | 4.29 грн |
107+ | 3.60 грн |
166+ | 2.32 грн |
500+ | 1.46 грн |
793+ | 1.13 грн |
2178+ | 1.07 грн |
BZX84C6V2TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
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BZX84C6V2Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C6V2S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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BZX84C6V2W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BZX84B6V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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ZXTP25040DFHTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 730mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 0.73W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 270MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 730mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 0.73W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 270MHz
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SMBJ58CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ58CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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MBR180S1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 24A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 24A
Kind of package: reel; tape
на замовлення 910 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.38 грн |
47+ | 8.20 грн |
100+ | 5.47 грн |
316+ | 2.85 грн |
868+ | 2.70 грн |
ZXMP7A17GTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -2.6A; Idm: -9.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -2.6A
Pulsed drain current: -9.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -2.6A; Idm: -9.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -2.6A
Pulsed drain current: -9.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 738 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.40 грн |
10+ | 46.13 грн |
34+ | 26.52 грн |
94+ | 25.14 грн |
500+ | 24.14 грн |
ZXMP7A17GQTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -1.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -1.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -1.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -1.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMP10A17GQTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.9A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.9A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMP10A17GQTC |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 33.75 грн |
DMN6140LQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
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DMN6140L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 13 inch reel; tape
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 13 inch reel; tape
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
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DMN6140LQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Case: SOT23-3
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Gate charge: 8.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Case: SOT23-3
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Gate charge: 8.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
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DMN6140L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.7W; SOT23
Kind of package: 7 inch reel; tape
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
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BC858C-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
на замовлення 2120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.38 грн |
47+ | 8.28 грн |
59+ | 6.51 грн |
144+ | 2.67 грн |
817+ | 1.10 грн |
BC858BW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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BC858CW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Quantity in set/package: 3000pcs.
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BZT52B15LP-7B |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; X1-DFN1006-2; 50nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; X1-DFN1006-2; 50nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Leakage current: 50nA
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BAT750-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.75A; reel,tape
Case: SOT23
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.75A; reel,tape
Case: SOT23
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 5046 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
19+ | 20.61 грн |
100+ | 12.41 грн |
102+ | 8.81 грн |
281+ | 8.35 грн |
1000+ | 8.12 грн |
DMTH4007LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252
Mounting: SMD
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 44A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252
Mounting: SMD
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 44A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
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DMTH4007LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 83.3W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 340A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 83.3W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 340A
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DMTH4007SPD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 11.9A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 41.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 11.9A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 41.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
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DMTH4007SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 13.1A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 41.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 13.1A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 41.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
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DMTH4007LPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 11A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 340A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 11A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 340A
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DMTH4007LK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 13.9A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Case: TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 13.9A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
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DMTH4007SPDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 11.9A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 41.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 11.9A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 41.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
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DMP2305UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -10A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -10A
Mounting: SMD
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DMP2305UVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W
Case: TSOT26
Drain-source voltage: -20V
Drain current: -2.98A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.64W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W
Case: TSOT26
Drain-source voltage: -20V
Drain current: -2.98A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.64W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16A
Mounting: SMD
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AP7343D-25W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT25
Tolerance: ±1%
Output voltage: 2.5V
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT25
Tolerance: ±1%
Output voltage: 2.5V
Voltage drop: 0.36V
Type of integrated circuit: voltage regulator
Number of channels: 1
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BAS299-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: quadruple
Reverse recovery time: 6ns
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Max. load current: 0.9A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: quadruple
Reverse recovery time: 6ns
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Max. load current: 0.9A
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ZVP0545GTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -0.075A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -0.075A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -0.075A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -0.075A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 94.91 грн |
10+ | 59.01 грн |
33+ | 27.51 грн |
91+ | 25.98 грн |
US1A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SMA; reel,tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SMA; reel,tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Mounting: SMD
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BZT52C3V0-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1227 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.25 грн |
66+ | 5.82 грн |
84+ | 4.60 грн |
128+ | 3.00 грн |
726+ | 1.24 грн |
DMG2302UK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1850 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
31+ | 12.41 грн |
50+ | 8.37 грн |
100+ | 6.98 грн |
245+ | 3.69 грн |
672+ | 3.49 грн |
MMSZ5229B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
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MMBZ5229B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT23; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOT23
Tolerance: ±5%
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MMBZ5229BW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOT323
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOT323; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOT323
Tolerance: ±5%
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MMSZ5229BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Application: automotive industry
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 4.3V
Application: automotive industry
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
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DMC2053UVT-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.58 грн |
DMC3071LVT-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 7.01 грн |
DMC3071LVT-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.01 грн |
SMCJ40CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.44 грн |
13+ | 30.50 грн |
76+ | 11.88 грн |
209+ | 11.19 грн |
AP7381-50SA-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7381
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7381
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
на замовлення 1594 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.31 грн |
16+ | 24.06 грн |
19+ | 20.38 грн |
100+ | 12.03 грн |
127+ | 7.13 грн |
349+ | 6.74 грн |
AP7381-33SA-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7381
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7381
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
на замовлення 1706 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.49 грн |
21+ | 19.08 грн |
100+ | 12.18 грн |
138+ | 6.51 грн |
380+ | 6.21 грн |