Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78532) > Сторінка 1309 з 1309
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BZX84C24Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 24V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZX84C24W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 24V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
DMP1045UFY4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 23.7nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -12V Drain current: -5.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET |
на замовлення 2369 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
DMN1045UFR4-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD Mounting: SMD Power dissipation: 1.26W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±8V Case: X2-DFN1010-3 Drain-source voltage: 12V Drain current: 3.2A On-state resistance: 0.1Ω Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP2045UFY4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Mounting: SMD Power dissipation: 1.49W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP1245UFCL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Mounting: SMD Power dissipation: 1.7W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 26.1nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -16.67A Case: X1-DFN1616-6 Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
AP7313-30SAG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD Manufacturer series: AP7313 Operating temperature: -40...85°C Output voltage: 3V Output current: 0.15A Voltage drop: 0.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...6V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23 Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
SD101CW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape Capacitance: 2.2pF Mounting: SMD Power dissipation: 0.4W Kind of package: reel; tape Type of diode: Schottky switching Case: SOD123 Max. off-state voltage: 40V Max. forward voltage: 0.9V Load current: 15mA Semiconductor structure: single diode Reverse recovery time: 1ns Max. forward impulse current: 2A |
на замовлення 720 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
SD101CWS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape Capacitance: 2.2pF Mounting: SMD Power dissipation: 0.2W Kind of package: reel; tape Type of diode: Schottky switching Case: SOD323 Max. off-state voltage: 40V Max. forward voltage: 0.9V Load current: 15mA Semiconductor structure: single diode Reverse recovery time: 1ns Max. forward impulse current: 2A |
на замовлення 2462 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
FCX690BTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Quantity in set/package: 1000pcs. Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 45V Collector current: 2A |
на замовлення 1096 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
DXT690BP5-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Type of transistor: NPN Power dissipation: 3.2W Polarisation: bipolar Quantity in set/package: 5000pcs. Case: PowerDI®5 Frequency: 150MHz Collector-emitter voltage: 45V Current gain: 60...700 Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DXT690BP5Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Type of transistor: NPN Application: automotive industry Power dissipation: 3.2W Polarisation: bipolar Quantity in set/package: 5000pcs. Case: PowerDI®5 Frequency: 150MHz Collector-emitter voltage: 45V Current gain: 60...700 Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FZT690BQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Type of transistor: NPN Application: automotive industry Power dissipation: 3W Polarisation: bipolar Quantity in set/package: 1000pcs. Case: SOT223 Frequency: 150MHz Collector-emitter voltage: 45V Current gain: 50...500 Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
B160-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A |
на замовлення 2171 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
B130-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A |
на замовлення 592 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
B160B-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A |
на замовлення 2135 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
B150-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
B130L-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Load current: 1A Max. forward impulse current: 25A |
на замовлення 4264 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
B150B-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A |
на замовлення 1978 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
B3100-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Capacitance: 200pF Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 3286 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
B330-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.5V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2742 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
DXTP03060BFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8 Frequency: 120MHz Collector-emitter voltage: 60V Current gain: 10...300 Collector current: 5.5A Type of transistor: PNP Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 2000pcs. Mounting: SMD Case: PowerDI®3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DXTP03060CFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8 Frequency: 120MHz Collector-emitter voltage: 60V Current gain: 45...800 Collector current: 5.5A Type of transistor: PNP Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 2000pcs. Mounting: SMD Case: PowerDI®3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
MMSZ5256BS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 1660 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
PAM8006ATR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32 Operating temperature: -40...125°C Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: QFN32 Frequency: 300kHz Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 15W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PAM8012AZN | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9 Operating temperature: -40...125°C Integrated circuit features: low distortion THD; low noise; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: WCSP9 Frequency: 250Hz Type of integrated circuit: audio amplifier Number of channels: 1 Output power: 2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BAT1000-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 500mW Type of diode: Schottky rectifying Max. off-state voltage: 40V Load current: 1A Case: SOT23 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 0.5W Capacitance: 175pF Max. forward impulse current: 5.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RS2G-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMB; reel,tape Mounting: SMD Load current: 1.5A Semiconductor structure: single diode Reverse recovery time: 150ns Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.4kV Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS2GA-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMA; reel,tape Mounting: SMD Load current: 1.5A Semiconductor structure: single diode Reverse recovery time: 150ns Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.4kV Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
S3MB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A Mounting: SMD Case: SMB Capacitance: 40pF Max. off-state voltage: 1kV Max. forward voltage: 1.15V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: rectifying |
на замовлення 4306 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
DGTD120T25S1PT | DIODES INCORPORATED |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Turn-off time: 367ns Type of transistor: IGBT Pulsed collector current: 100A Collector current: 25A Power dissipation: 174W Gate-emitter voltage: ±20V Collector-emitter voltage: 1.2kV Kind of package: tube Case: TO247-3 Gate charge: 204nC Turn-on time: 110ns Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
ZXTD720MCTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2.45W Case: DFN3020B-8 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 190MHz |
на замовлення 2991 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
SBR6200CTL-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape Case: DPAK Max. off-state voltage: 200V Max. forward voltage: 0.85V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 80A Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RDBF310-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 3A Max. forward impulse current: 100A Case: DBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SMBJ150A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1675 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
FCX491ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89 Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 300...900 Collector current: 1A Type of transistor: NPN Polarisation: bipolar Quantity in set/package: 1000pcs. |
на замовлення 669 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
FCX591ATA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89 Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 30...800 Collector current: 1A Type of transistor: PNP Polarisation: bipolar Quantity in set/package: 1000pcs. |
на замовлення 964 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
ZVP3306A | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -160mA Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 751 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
ZTL432BFFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23F Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SMBJ120A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DDTD113ZC-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 3000pcs. Current gain: 56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMN30H14DLY-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1A Mounting: SMD Case: SOT89 Drain-source voltage: 300V Drain current: 0.16A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ZXMN6A08E6TA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ZXMN6A08GQTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ZXMN6A08GQTC | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SMBJ200A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 200V Breakdown voltage: 224...247V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT10U60D1Q-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A Type of diode: Schottky rectifying Case: TO252/DPAK Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.52V Leakage current: 80µA Max. forward impulse current: 140A Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AP61302QZ6-7 | DIODES INCORPORATED |
![]() Description: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
2DC4617R-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT523 Current gain: 180...390 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SMCJ13A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 69.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MMDT3904Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMDT3904VC-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT563 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. |
BZX84C24Q-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZX84C24W-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
DMP1045UFY4-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.7nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -12V
Drain current: -5.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.7nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -12V
Drain current: -5.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
на замовлення 2369 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.84 грн |
18+ | 22.22 грн |
30+ | 18.85 грн |
96+ | 9.43 грн |
263+ | 8.89 грн |
DMN1045UFR4-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD
Mounting: SMD
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD
Mounting: SMD
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
DMP2045UFY4-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Power dissipation: 1.49W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Power dissipation: 1.49W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
DMP1245UFCL-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 26.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 26.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
AP7313-30SAG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
товару немає в наявності
В кошику
од. на суму грн.
SD101CW-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.4W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.4W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
на замовлення 720 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
35+ | 10.96 грн |
50+ | 8.98 грн |
100+ | 8.14 грн |
226+ | 3.98 грн |
620+ | 3.76 грн |
SD101CWS-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape
Capacitance: 2.2pF
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 40V
Max. forward voltage: 0.9V
Load current: 15mA
Semiconductor structure: single diode
Reverse recovery time: 1ns
Max. forward impulse current: 2A
на замовлення 2462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
32+ | 12.34 грн |
100+ | 8.20 грн |
158+ | 5.67 грн |
434+ | 5.36 грн |
FCX690BTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 45V
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 45V
Collector current: 2A
на замовлення 1096 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.74 грн |
14+ | 28.43 грн |
50+ | 22.53 грн |
76+ | 11.88 грн |
208+ | 11.27 грн |
DXT690BP5-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
товару немає в наявності
В кошику
од. на суму грн.
DXT690BP5Q-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
товару немає в наявності
В кошику
од. на суму грн.
FZT690BQTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT223
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 50...500
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT223
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 50...500
Collector current: 3A
товару немає в наявності
В кошику
од. на суму грн.
B160-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
на замовлення 2171 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.73 грн |
54+ | 7.13 грн |
70+ | 5.50 грн |
100+ | 4.87 грн |
341+ | 2.64 грн |
936+ | 2.49 грн |
B130-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
на замовлення 592 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.38 грн |
50+ | 7.82 грн |
100+ | 4.85 грн |
341+ | 2.64 грн |
B160B-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
на замовлення 2135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.86 грн |
35+ | 11.04 грн |
100+ | 8.79 грн |
265+ | 3.39 грн |
728+ | 3.20 грн |
B150-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.38 грн |
49+ | 7.97 грн |
100+ | 6.20 грн |
B130L-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 25A
на замовлення 4264 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.33 грн |
32+ | 12.26 грн |
100+ | 9.50 грн |
140+ | 6.44 грн |
384+ | 6.05 грн |
B150B-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
на замовлення 1978 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.28 грн |
36+ | 10.73 грн |
100+ | 7.52 грн |
206+ | 4.37 грн |
564+ | 4.13 грн |
B3100-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 3286 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.71 грн |
20+ | 19.62 грн |
100+ | 8.97 грн |
275+ | 8.51 грн |
B330-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2742 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.79 грн |
16+ | 24.68 грн |
100+ | 18.01 грн |
135+ | 6.67 грн |
371+ | 6.28 грн |
DXTP03060BFG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 10...300
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 10...300
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
товару немає в наявності
В кошику
од. на суму грн.
DXTP03060CFG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 45...800
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 45...800
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
товару немає в наявності
В кошику
од. на суму грн.
MMSZ5256BS-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 1660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.73 грн |
56+ | 6.90 грн |
73+ | 5.29 грн |
96+ | 4.02 грн |
168+ | 2.29 грн |
532+ | 1.69 грн |
1463+ | 1.59 грн |
PAM8006ATR |
![]() |
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN32
Frequency: 300kHz
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN32
Frequency: 300kHz
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
товару немає в наявності
В кошику
од. на суму грн.
PAM8012AZN |
![]() |
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: WCSP9
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: WCSP9
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2W
товару немає в наявності
В кошику
од. на суму грн.
BAT1000-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 500mW
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 1A
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Capacitance: 175pF
Max. forward impulse current: 5.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 500mW
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 1A
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Capacitance: 175pF
Max. forward impulse current: 5.5A
товару немає в наявності
В кошику
од. на суму грн.
RS2G-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMB; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMB
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMB; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMB
товару немає в наявності
В кошику
од. на суму грн.
RS2GA-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMA; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMA; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
S3MB-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Case: SMB
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Case: SMB
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
на замовлення 4306 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
21+ | 18.62 грн |
100+ | 13.79 грн |
164+ | 5.44 грн |
450+ | 5.21 грн |
DGTD120T25S1PT |
![]() |
Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Turn-off time: 367ns
Type of transistor: IGBT
Pulsed collector current: 100A
Collector current: 25A
Power dissipation: 174W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO247-3
Gate charge: 204nC
Turn-on time: 110ns
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Turn-off time: 367ns
Type of transistor: IGBT
Pulsed collector current: 100A
Collector current: 25A
Power dissipation: 174W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO247-3
Gate charge: 204nC
Turn-on time: 110ns
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
ZXTD720MCTA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2.45W
Case: DFN3020B-8
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2.45W
Case: DFN3020B-8
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
на замовлення 2991 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.40 грн |
10+ | 49.66 грн |
32+ | 28.43 грн |
87+ | 26.82 грн |
500+ | 26.36 грн |
1000+ | 25.90 грн |
SBR6200CTL-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
RDBF310-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
SMBJ150A-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1675 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.28 грн |
27+ | 14.64 грн |
33+ | 11.65 грн |
100+ | 8.20 грн |
156+ | 5.75 грн |
428+ | 5.44 грн |
FCX491ATA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 300...900
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 300...900
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Quantity in set/package: 1000pcs.
на замовлення 669 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.96 грн |
14+ | 27.43 грн |
50+ | 20.00 грн |
70+ | 12.87 грн |
192+ | 12.18 грн |
FCX591ATA |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 30...800
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 30...800
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
на замовлення 964 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.96 грн |
16+ | 24.45 грн |
50+ | 19.62 грн |
60+ | 15.17 грн |
163+ | 14.33 грн |
500+ | 13.79 грн |
ZVP3306A |
![]() |
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -160mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 751 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.67 грн |
10+ | 46.75 грн |
37+ | 24.22 грн |
102+ | 22.91 грн |
ZTL432BFFTA |
![]() |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
SMBJ120A-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
DDTD113ZC-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
товару немає в наявності
В кошику
од. на суму грн.
DMN30H14DLY-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1A
Mounting: SMD
Case: SOT89
Drain-source voltage: 300V
Drain current: 0.16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1A
Mounting: SMD
Case: SOT89
Drain-source voltage: 300V
Drain current: 0.16A
товару немає в наявності
В кошику
од. на суму грн.
ZXMN6A08E6TA |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 25.25 грн |
ZXMN6A08GQTA |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 29.13 грн |
ZXMN6A08GQTC |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 29.13 грн |
SMBJ200A-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
SBRT10U60D1Q-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252/DPAK; Trench SBR®; SMD; 60V; 10A
Type of diode: Schottky rectifying
Case: TO252/DPAK
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 80µA
Max. forward impulse current: 140A
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
AP61302QZ6-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.61 грн |
2DC4617R-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT523
Current gain: 180...390
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT523
Current gain: 180...390
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMCJ13A-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
MMDT3904Q-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
MMDT3904VC-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.