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AP22814BW5-7 AP22814BW5-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22814ASN-7 DIODES INCORPORATED AP22804_14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22814BM8-13 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22814BSN-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DMN3024SFG-13 DMN3024SFG-13 DIODES INCORPORATED DMN3024SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: PowerDI3333-8
на замовлення 2348 шт:
термін постачання 21-30 дні (днів)
17+25.58 грн
18+21.38 грн
70+13.03 грн
191+12.34 грн
Мінімальне замовлення: 17
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DMN3055LFDB-13 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
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DMN3055LFDB-7 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
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ZVN3320FTA ZVN3320FTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB2A7F1906D8BF&compId=ZVN3320F.pdf?ci_sign=66fa49580c0b50ee76e465ea929388206bc81c54 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 678 шт:
термін постачання 21-30 дні (днів)
11+38.79 грн
16+25.37 грн
63+14.48 грн
172+13.72 грн
500+13.26 грн
Мінімальне замовлення: 11
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AP2205-50Y-13 AP2205-50Y-13 DIODES INCORPORATED AP2205.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
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AP2205-50YR-13 AP2205-50YR-13 DIODES INCORPORATED AP2205.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
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AP2205-30W5-7 DIODES INCORPORATED AP2205.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
Integrated circuit features: shutdown mode control input
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AP2205-18W5-7 AP2205-18W5-7 DIODES INCORPORATED AP2205.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.8V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
Integrated circuit features: shutdown mode control input
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SMBJ11CA-13-F SMBJ11CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12.2÷14.4V; 33A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...14.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 988 шт:
термін постачання 21-30 дні (днів)
18+23.11 грн
27+14.33 грн
100+10.35 грн
139+6.51 грн
381+6.21 грн
Мінімальне замовлення: 18
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74LVC245AQ20-13 DIODES INCORPORATED 74LVC245A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 1bit,transceiver,translator; Ch: 8; IN: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; transceiver; translator
Number of channels: 8
Mounting: SMD
Case: V-QFN4525-20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Technology: CMOS
Number of inputs: 8
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SDM10M45SD-7-F SDM10M45SD-7-F DIODES INCORPORATED ds30386.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Capacitance: 6pF
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT26
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SDM2100S1FQ-7 SDM2100S1FQ-7 DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Capacitance: 42pF
Max. off-state voltage: 100V
Max. forward voltage: 0.83V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
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SDM2100S1F-7 SDM2100S1F-7 DIODES INCORPORATED SDM2100S1F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Capacitance: 42pF
Max. off-state voltage: 100V
Max. forward voltage: 0.83V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
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SDM1U100S1F-7 SDM1U100S1F-7 DIODES INCORPORATED SDM1U100S1F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Capacitance: 42pF
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
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DMC3061SVTQ-7 DIODES INCORPORATED DMC3061SVTQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+11.64 грн
Мінімальне замовлення: 3000
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74AHCT1G125QSE-7 DIODES INCORPORATED 74AHCT1G125Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Number of inputs: 2
Case: SOT353
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74AHCT1G125QW5-7 DIODES INCORPORATED 74AHCT1G125Q.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Number of inputs: 2
Case: SOT25
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AP7363-10D-13 DIODES INCORPORATED AP7363.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 1.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Case: DPAK
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP7363
Kind of voltage regulator: fixed; LDO; linear
Output current: 1.5A
Voltage drop: 0.24V
Output voltage: 1V
Number of channels: 1
Input voltage: 2.2...5.5V
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ZVN4206AVSTZ ZVN4206AVSTZ DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB3A98EB5718BF&compId=ZVN4206AV.pdf?ci_sign=13b152030765fe7df735f7919c3d9adf404214ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 1069 шт:
термін постачання 21-30 дні (днів)
6+74.28 грн
10+44.37 грн
39+23.14 грн
107+21.92 грн
1000+21.07 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AP2127N-3.3TRG1 AP2127N-3.3TRG1 DIODES INCORPORATED AP2127.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2127
Output voltage: 3.3V
Output current: 0.4A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
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PAM2808BLBR DIODES INCORPORATED PAM2808.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; 1.5A; Ch: 1; 2.5÷6VDC
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating temperature: -40...85°C
Case: SO8-EP
Operating voltage: 2.5...6V DC
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SD20C-7 DIODES INCORPORATED SD20C.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 370W; 21V; 10A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Capacitance: 31pF
Max. forward impulse current: 10A
Kind of package: reel; tape
Breakdown voltage: 21V
Version: ESD
Peak pulse power dissipation: 370W
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DMP3068L-7 DMP3068L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3CEE81ECC38BF&compId=DMP3068L.pdf?ci_sign=3780ae5b8203cebf36e35120b74b3ce798dea5c1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±12V
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
18+23.11 грн
28+13.95 грн
50+8.34 грн
100+7.17 грн
210+4.28 грн
576+4.05 грн
1500+3.95 грн
3000+3.93 грн
Мінімальне замовлення: 18
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DDTA113ZE-7-F DIODES INCORPORATED ds30318.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
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DMP2065UFDB-13 DIODES INCORPORATED DMP2065UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Mounting: SMD
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 9.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -25A
Case: U-DFN2020-6
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SBR140S1FQ-7 SBR140S1FQ-7 DIODES INCORPORATED SBR140S1FQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SBR®; SMD; 40V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Capacitance: 22pF
Max. off-state voltage: 40V
Max. forward voltage: 0.51V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Application: automotive industry
Type of diode: Schottky rectifying
Technology: SBR®
на замовлення 1935 шт:
термін постачання 21-30 дні (днів)
16+27.23 грн
23+17.40 грн
100+12.18 грн
118+7.66 грн
324+7.28 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMBJ26CA-13-F SMBJ26CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
17+24.76 грн
25+15.48 грн
100+10.96 грн
130+6.90 грн
Мінімальне замовлення: 17
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SMBJ26CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMCJ36CA-13-F SMCJ36CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ28CA-13-F SMBJ28CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ28CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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PDS5100-13 DIODES INCORPORATED ds30483.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
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PDS5100Q-13D DIODES INCORPORATED PDS5100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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SMCJ28CA-13-F SMCJ28CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ28CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMCJ30CA-13-F SMCJ30CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMP4047SK3-13 DMP4047SK3-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E19A9AA2F578BF&compId=DMP4047SK3.pdf?ci_sign=225faf4c4c3cd0cee4395490afbd77aa0479aac2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2192 шт:
термін постачання 21-30 дні (днів)
8+56.94 грн
11+37.70 грн
61+14.87 грн
166+14.02 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMP4047LFDE-7 DMP4047LFDE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E190A1999318BF&compId=DMP4047LFDE.pdf?ci_sign=ee0a326b9c80a08e5c79fbeda42d9eaea22ad04f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 868 шт:
термін постачання 21-30 дні (днів)
11+37.96 грн
17+22.84 грн
50+18.39 грн
58+15.48 грн
159+14.64 грн
500+14.10 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMC4047LSD-13 DMC4047LSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B655D761591BF&compId=DMC4047LSD-13.pdf?ci_sign=1f9347077d2f3d0a9cdb40930dee8a9575fc7dfa Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
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DMP4047LFDEQ-13 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 24.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -36A
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DMP4047LFDEQ-7 DIODES INCORPORATED DMP4047LFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 24.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -36A
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DMP4047SSD-13 DMP4047SSD-13 DIODES INCORPORATED DMP4047SSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 21.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -26A
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APX803L20-41SA-7 APX803L20-41SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23
DC supply current: 1µA
Supply voltage: 0.9...5.5V DC
Type of integrated circuit: supervisor circuit
Delay time: 220ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.1V
Kind of integrated circuit: power on reset monitor (PoR)
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DDTC124ECA-7-F DDTC124ECA-7-F DIODES INCORPORATED ds30329.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
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DDTC124EUA-7-F DDTC124EUA-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
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ADTC124ECAQ-7 DIODES INCORPORATED ADTC124ECAQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 56
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DDTC124EE-7-F DIODES INCORPORATED ds30313.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
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DDTC124EUAQ-7-F DDTC124EUAQ-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 56
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FZT851TA FZT851TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55BF3D092E749&compId=FZT851.pdf?ci_sign=d516316d8afde0c6291d4ed6f83b381fdd99975f description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 1806 шт:
термін постачання 21-30 дні (днів)
8+58.60 грн
10+40.16 грн
34+26.36 грн
94+24.91 грн
1000+24.75 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT489TA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 4A
Quantity in set/package: 1000pcs.
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FMMT489TA DIODES INCORPORATED FMMT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 4A
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DMN3032LE-13 DMN3032LE-13 DIODES INCORPORATED DMN3032LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 30V
Drain current: 4.1A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
на замовлення 1264 шт:
термін постачання 21-30 дні (днів)
9+47.87 грн
13+31.57 грн
71+12.72 грн
194+12.03 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ54CA-13-F SMBJ54CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 60÷69V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 455 шт:
термін постачання 21-30 дні (днів)
16+27.23 грн
24+16.55 грн
29+13.41 грн
100+7.28 грн
140+6.44 грн
384+6.05 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMBJ51CA-13-F SMBJ51CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 985 шт:
термін постачання 21-30 дні (днів)
20+21.46 грн
29+13.33 грн
100+9.27 грн
171+5.29 грн
468+4.98 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMBJ75CA-13-F SMBJ75CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP22814BW5-7 AP22804-14.pdf
AP22814BW5-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22814ASN-7 AP22804_14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22814BM8-13 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22814BSN-7 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DMN3024SFG-13 DMN3024SFG.pdf
DMN3024SFG-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 60A
Case: PowerDI3333-8
на замовлення 2348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.58 грн
18+21.38 грн
70+13.03 грн
191+12.34 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
DMN3055LFDB-13 DMN3055LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
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DMN3055LFDB-7 DMN3055LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
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ZVN3320FTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB2A7F1906D8BF&compId=ZVN3320F.pdf?ci_sign=66fa49580c0b50ee76e465ea929388206bc81c54
ZVN3320FTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 678 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+38.79 грн
16+25.37 грн
63+14.48 грн
172+13.72 грн
500+13.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
AP2205-50Y-13 AP2205.pdf
AP2205-50Y-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
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AP2205-50YR-13 AP2205.pdf
AP2205-50YR-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
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AP2205-30W5-7 AP2205.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
Integrated circuit features: shutdown mode control input
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AP2205-18W5-7 AP2205.pdf
AP2205-18W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 1.8V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
Integrated circuit features: shutdown mode control input
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SMBJ11CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ11CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12.2÷14.4V; 33A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...14.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 988 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.11 грн
27+14.33 грн
100+10.35 грн
139+6.51 грн
381+6.21 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
74LVC245AQ20-13 74LVC245A.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; 1bit,transceiver,translator; Ch: 8; IN: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; transceiver; translator
Number of channels: 8
Mounting: SMD
Case: V-QFN4525-20
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Technology: CMOS
Number of inputs: 8
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SDM10M45SD-7-F ds30386.pdf
SDM10M45SD-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT26; SMD; 45V; 0.1A; reel,tape; 225mW
Capacitance: 6pF
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: double series x2
Max. forward impulse current: 1A
Leakage current: 1µA
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT26
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SDM2100S1FQ-7
SDM2100S1FQ-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Capacitance: 42pF
Max. off-state voltage: 100V
Max. forward voltage: 0.83V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
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SDM2100S1F-7 SDM2100S1F.pdf
SDM2100S1F-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Capacitance: 42pF
Max. off-state voltage: 100V
Max. forward voltage: 0.83V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
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SDM1U100S1F-7 SDM1U100S1F.pdf
SDM1U100S1F-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Capacitance: 42pF
Max. off-state voltage: 100V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
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DMC3061SVTQ-7 DMC3061SVTQ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+11.64 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
74AHCT1G125QSE-7 74AHCT1G125Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Number of inputs: 2
Case: SOT353
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74AHCT1G125QW5-7 74AHCT1G125Q.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: AHCT
Kind of input: with Schmitt trigger
Number of inputs: 2
Case: SOT25
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AP7363-10D-13 AP7363.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 1.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Case: DPAK
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: AP7363
Kind of voltage regulator: fixed; LDO; linear
Output current: 1.5A
Voltage drop: 0.24V
Output voltage: 1V
Number of channels: 1
Input voltage: 2.2...5.5V
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ZVN4206AVSTZ pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB3A98EB5718BF&compId=ZVN4206AV.pdf?ci_sign=13b152030765fe7df735f7919c3d9adf404214ce
ZVN4206AVSTZ
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 1069 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.28 грн
10+44.37 грн
39+23.14 грн
107+21.92 грн
1000+21.07 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
AP2127N-3.3TRG1 AP2127.pdf
AP2127N-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2127
Output voltage: 3.3V
Output current: 0.4A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
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PAM2808BLBR PAM2808.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; 1.5A; Ch: 1; 2.5÷6VDC
Mounting: SMD
Output current: 1.5A
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating temperature: -40...85°C
Case: SO8-EP
Operating voltage: 2.5...6V DC
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SD20C-7 SD20C.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 370W; 21V; 10A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Capacitance: 31pF
Max. forward impulse current: 10A
Kind of package: reel; tape
Breakdown voltage: 21V
Version: ESD
Peak pulse power dissipation: 370W
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DMP3068L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3CEE81ECC38BF&compId=DMP3068L.pdf?ci_sign=3780ae5b8203cebf36e35120b74b3ce798dea5c1
DMP3068L-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±12V
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.11 грн
28+13.95 грн
50+8.34 грн
100+7.17 грн
210+4.28 грн
576+4.05 грн
1500+3.95 грн
3000+3.93 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DDTA113ZE-7-F ds30318.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 3000pcs.
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DMP2065UFDB-13 DMP2065UFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Mounting: SMD
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 9.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -25A
Case: U-DFN2020-6
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SBR140S1FQ-7 SBR140S1FQ.pdf
SBR140S1FQ-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SBR®; SMD; 40V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Capacitance: 22pF
Max. off-state voltage: 40V
Max. forward voltage: 0.51V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Application: automotive industry
Type of diode: Schottky rectifying
Technology: SBR®
на замовлення 1935 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.23 грн
23+17.40 грн
100+12.18 грн
118+7.66 грн
324+7.28 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMBJ26CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ26CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.76 грн
25+15.48 грн
100+10.96 грн
130+6.90 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SMBJ26CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMCJ36CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMBJ28CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ28CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.1÷35.8V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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PDS5100-13 ds30483.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 5mA
Max. forward impulse current: 120A
Kind of package: reel; tape
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PDS5100Q-13D PDS5100Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 4.5mA
Max. forward impulse current: 250A
Kind of package: reel; tape
Application: automotive industry
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SMCJ28CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ28CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMCJ30CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ30CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
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DMP4047SK3-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E19A9AA2F578BF&compId=DMP4047SK3.pdf?ci_sign=225faf4c4c3cd0cee4395490afbd77aa0479aac2
DMP4047SK3-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Mounting: SMD
Case: TO252
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2192 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.94 грн
11+37.70 грн
61+14.87 грн
166+14.02 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMP4047LFDE-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E190A1999318BF&compId=DMP4047LFDE.pdf?ci_sign=ee0a326b9c80a08e5c79fbeda42d9eaea22ad04f
DMP4047LFDE-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.9A; 0.7W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -40V
Drain current: -4.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 868 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+37.96 грн
17+22.84 грн
50+18.39 грн
58+15.48 грн
159+14.64 грн
500+14.10 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMC4047LSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B655D761591BF&compId=DMC4047LSD-13.pdf?ci_sign=1f9347077d2f3d0a9cdb40930dee8a9575fc7dfa
DMC4047LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±20V
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DMP4047LFDEQ-13 DMP4047LFDEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 24.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -36A
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DMP4047LFDEQ-7 DMP4047LFDEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Mounting: SMD
Case: U-DFN2020-6
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 24.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -36A
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DMP4047SSD-13 DMP4047SSD.pdf
DMP4047SSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 21.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -26A
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APX803L20-41SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L20-41SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT23
DC supply current: 1µA
Supply voltage: 0.9...5.5V DC
Type of integrated circuit: supervisor circuit
Delay time: 220ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4.1V
Kind of integrated circuit: power on reset monitor (PoR)
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DDTC124ECA-7-F ds30329.pdf
DDTC124ECA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
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DDTC124EUA-7-F ds30321.pdf
DDTC124EUA-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
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ADTC124ECAQ-7 ADTC124ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 56
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DDTC124EE-7-F ds30313.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Current gain: 56
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DDTC124EUAQ-7-F ds30321.pdf
DDTC124EUAQ-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Current gain: 56
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FZT851TA description pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55BF3D092E749&compId=FZT851.pdf?ci_sign=d516316d8afde0c6291d4ed6f83b381fdd99975f
FZT851TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 1806 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.60 грн
10+40.16 грн
34+26.36 грн
94+24.91 грн
1000+24.75 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT489TA FZT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 4A
Quantity in set/package: 1000pcs.
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FMMT489TA FMMT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 4A
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DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 30V
Drain current: 4.1A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
на замовлення 1264 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.87 грн
13+31.57 грн
71+12.72 грн
194+12.03 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ54CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ54CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 60÷69V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 455 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.23 грн
24+16.55 грн
29+13.41 грн
100+7.28 грн
140+6.44 грн
384+6.05 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMBJ51CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ51CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.7÷65.2V; 7.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 985 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.46 грн
29+13.33 грн
100+9.27 грн
171+5.29 грн
468+4.98 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMBJ75CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ75CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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