Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74592) > Сторінка 186 з 1244
| Фото | Назва | Виробник | Інформація |
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DF10S-T | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 1A DF-SPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DF1501M | Diodes Incorporated |
Description: RECT BRIDGE GPP 1.5A 100V DFM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF1502M | Diodes Incorporated |
Description: RECT BRIDGE GPP 1.5A 200V DFM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF1504M | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 400V 1.5A DFMPackaging: Tube Package / Case: 4-EDIP (0.300", 7.62mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DFM Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF1506M | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 1.5A DFM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF1508M | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 1.5A DFMPackaging: Tube Package / Case: 4-EDIP (0.300", 7.62mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DFM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF1510M | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 1.5A DFMPackaging: Tube Package / Case: 4-EDIP (0.300", 7.62mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DFM Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DFLR1600-7 | Diodes Incorporated |
Description: DIODE STD 600V 1A POWERDI123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 1410000 шт: термін постачання 21-31 дні (днів) |
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DFLS240-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 40V 2A POWERDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 28pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V |
на замовлення 163970 шт: термін постачання 21-31 дні (днів) |
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DFLT14A-7 | Diodes Incorporated |
Description: TVS DIODE 14VWM POWERDI123 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DFLT16A-7 | Diodes Incorporated |
Description: TVS DIODE 16VWM 26VC POWERDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.65A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 225W Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DFLT22A-7 | Diodes Incorporated |
Description: TVS DIODE 22VWM 35.5VC PWRDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.34A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 225W Power Line Protection: No Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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DFLT26A-7 | Diodes Incorporated |
Description: TVS DIODE 26VWM 42.1VC PWRDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.35A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 225W Power Line Protection: No Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DFLT30A-7 | Diodes Incorporated |
Description: TVS DIODE 30VWM 48.4VC PWRDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.65A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 225W Power Line Protection: No Part Status: Active |
на замовлення 177000 шт: термін постачання 21-31 дні (днів) |
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DFLT43A-7 | Diodes Incorporated |
Description: TVS DIODE 43VWM POWERDI123 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DFLT7V0A-7 | Diodes Incorporated |
Description: TVS DIODE 7VWM 12VC POWERDI123 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DFLT9V0A-7 | Diodes Incorporated |
Description: TVS DIODE 9VWM 15.4VC PWRDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 14.6A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 225W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DFLZ11-7 | Diodes Incorporated |
Description: DIODE ZENER 11V 1W POWERDI 123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: PowerDI™ 123 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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DFLZ36-7 | Diodes Incorporated |
Description: DIODE ZENER 36V 1W POWERDI123 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DFLZ7V5-7 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 1W POWERDI 123Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: PowerDI™ 123 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DIMD10A-7 | Diodes Incorporated |
Description: TRANS NPN/PNP PREBIAS 0.3W SC74R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC3018LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 9.1A/6A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC3035LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.9A/5A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC3036LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 5A/4.5A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMMT3906-7-F | Diodes Incorporated |
Description: TRANS 2PNP 40V 200MA SOT-26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 225mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-26 Part Status: Active |
на замовлення 108000 шт: термін постачання 21-31 дні (днів) |
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DMMT5551S-7-F | Diodes Incorporated |
Description: TRANS 2NPN 160V 200MA SOT-26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-26 Part Status: Active |
на замовлення 186000 шт: термін постачання 21-31 дні (днів) |
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DMN3030LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 9A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3033LDM-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 6.9A SOT-26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DMN32D2LDF-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.4A SOT353Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 280mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-353 |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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DMN32D2LV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.4A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN5L06T-7 | Diodes Incorporated |
Description: MOSFET N-CH 50V 280MA SOT-523 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN5L06V-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.28A SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN5L06VA-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.28A SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN5L06W-7 | Diodes Incorporated |
Description: MOSFET N-CH 50V 280MA SC70-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP2022LSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 10A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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DMP3035LSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 11A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V |
на замовлення 115000 шт: термін постачання 21-31 дні (днів) |
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DMP3056LSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 6.9A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMP3056LSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 7.1A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DMP3098LSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 4.4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3100L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.7A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP57D5UFB-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 200MA 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V Power Dissipation (Max): 425mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DNLS160-7 | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 270MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DNLS320A-7 | Diodes Incorporated |
Description: TRANS NPN 20V 2A SOT23-3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DNLS320E-13 | Diodes Incorporated |
Description: TRANS NPN 20V 3A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
на замовлення 515000 шт: термін постачання 21-31 дні (днів) |
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DNLS350E-13 | Diodes Incorporated |
Description: TRANS NPN 50V 3A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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DNLS350Y-13 | Diodes Incorporated |
Description: TRANS NPN 50V 3A SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 355000 шт: термін постачання 21-31 дні (днів) |
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DPLS320A-7 | Diodes Incorporated |
Description: TRANS PNP 20V 2A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DPLS4140E-13 | Diodes Incorporated |
Description: TRANS PNP 140V 4A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W |
на замовлення 320000 шт: термін постачання 21-31 дні (днів) |
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DXT651-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A SOT-89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DZT651-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A SOT-223 |
на замовлення 125007500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DZT658-13 | Diodes Incorporated |
Description: TRANS NPN 400V 0.5A SOT223-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DZT751-13 | Diodes Incorporated |
Description: TRANS PNP 60V 3A SOT-223 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DZT955-13 | Diodes Incorporated |
Description: TRANS PNP 140V 4A SOT223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GBJ1008-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 10A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GBJ1508-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 15A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 158416 шт: термін постачання 21-31 дні (днів) |
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GBJ2008-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 20A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 6545 шт: термін постачання 21-31 дні (днів) |
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GBJ2508-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 25A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 27666 шт: термін постачання 21-31 дні (днів) |
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GBJ608-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 6A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GBJ808-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 8A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 555 шт: термін постачання 21-31 дні (днів) |
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GBU1001 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 100V 10A GBUPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 938 шт: термін постачання 21-31 дні (днів) |
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| DF10S-T |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A DF-S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 12.39 грн |
| DF1501M |
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Виробник: Diodes Incorporated
Description: RECT BRIDGE GPP 1.5A 100V DFM
Description: RECT BRIDGE GPP 1.5A 100V DFM
товару немає в наявності
В кошику
од. на суму грн.
| DF1502M |
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Виробник: Diodes Incorporated
Description: RECT BRIDGE GPP 1.5A 200V DFM
Description: RECT BRIDGE GPP 1.5A 200V DFM
товару немає в наявності
В кошику
од. на суму грн.
| DF1504M |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 1.5A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1.5A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| DF1506M |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 1.5A DFM
Description: BRIDGE RECT 1PHASE 600V 1.5A DFM
товару немає в наявності
В кошику
од. на суму грн.
| DF1508M |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 1.5A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| DF1510M |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1.5A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.5A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| DFLR1600-7 |
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Виробник: Diodes Incorporated
Description: DIODE STD 600V 1A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE STD 600V 1A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 1410000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.36 грн |
| 6000+ | 5.66 грн |
| 9000+ | 5.28 грн |
| DFLS240-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Description: DIODE SCHOTTK 40V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
на замовлення 163970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.97 грн |
| 6000+ | 15.68 грн |
| 9000+ | 13.54 грн |
| DFLT14A-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 14VWM POWERDI123
Description: TVS DIODE 14VWM POWERDI123
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DFLT16A-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 16VWM 26VC POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.65A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 16VWM 26VC POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.65A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.58 грн |
| DFLT22A-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 22VWM 35.5VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.34A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 22VWM 35.5VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.34A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.58 грн |
| 6000+ | 9.57 грн |
| 15000+ | 8.95 грн |
| 30000+ | 7.71 грн |
| DFLT26A-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 26VWM 42.1VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.35A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 26VWM 42.1VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.35A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.36 грн |
| 6000+ | 8.64 грн |
| DFLT30A-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 30VWM 48.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.65A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.65A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Part Status: Active
на замовлення 177000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.05 грн |
| 6000+ | 8.35 грн |
| 9000+ | 7.52 грн |
| 30000+ | 6.95 грн |
| 75000+ | 6.66 грн |
| DFLT43A-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 43VWM POWERDI123
Description: TVS DIODE 43VWM POWERDI123
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DFLT7V0A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 7VWM 12VC POWERDI123
Description: TVS DIODE 7VWM 12VC POWERDI123
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DFLT9V0A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 9VWM 15.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Description: TVS DIODE 9VWM 15.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 225W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.50 грн |
| 6000+ | 8.34 грн |
| 9000+ | 7.93 грн |
| 15000+ | 7.01 грн |
| DFLZ11-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 11V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Description: DIODE ZENER 11V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: PowerDI™ 123
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.03 грн |
| 6000+ | 8.15 грн |
| 9000+ | 7.99 грн |
| 15000+ | 6.77 грн |
| DFLZ36-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 36V 1W POWERDI123
Description: DIODE ZENER 36V 1W POWERDI123
товару немає в наявності
В кошику
од. на суму грн.
| DFLZ7V5-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 7.5V 1W POWERDI 123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 7.5V 1W POWERDI 123
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: PowerDI™ 123
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.17 грн |
| 6000+ | 8.38 грн |
| DIMD10A-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN/PNP PREBIAS 0.3W SC74R
Description: TRANS NPN/PNP PREBIAS 0.3W SC74R
товару немає в наявності
В кошику
од. на суму грн.
| DMC3018LSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
Description: MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| DMC3035LSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.9A/5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 6.9A/5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| DMC3036LSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5A/4.5A 8-SOIC
Description: MOSFET N/P-CH 30V 5A/4.5A 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| DMMT3906-7-F |
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Виробник: Diodes Incorporated
Description: TRANS 2PNP 40V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Part Status: Active
Description: TRANS 2PNP 40V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Part Status: Active
на замовлення 108000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.84 грн |
| 6000+ | 6.87 грн |
| 9000+ | 6.53 грн |
| 15000+ | 5.85 грн |
| DMMT5551S-7-F |
![]() |
Виробник: Diodes Incorporated
Description: TRANS 2NPN 160V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-26
Part Status: Active
Description: TRANS 2NPN 160V 200MA SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-26
Part Status: Active
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.17 грн |
| 6000+ | 6.26 грн |
| 9000+ | 5.93 грн |
| 15000+ | 5.22 грн |
| 21000+ | 5.01 грн |
| 30000+ | 4.81 грн |
| 75000+ | 4.30 грн |
| 150000+ | 4.21 грн |
| DMN3030LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN3033LDM-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 6.9A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
Description: MOSFET N-CH 30V 6.9A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.81 грн |
| DMN32D2LDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.56 грн |
| 6000+ | 4.85 грн |
| 9000+ | 4.59 грн |
| 15000+ | 4.09 грн |
| DMN32D2LV-7 |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 30V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| DMN5L06T-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 280MA SOT-523
Description: MOSFET N-CH 50V 280MA SOT-523
товару немає в наявності
В кошику
од. на суму грн.
| DMN5L06V-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT-563
Description: MOSFET 2N-CH 50V 0.28A SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| DMN5L06VA-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT-563
Description: MOSFET 2N-CH 50V 0.28A SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| DMN5L06W-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 280MA SC70-3
Description: MOSFET N-CH 50V 280MA SC70-3
товару немає в наявності
В кошику
од. на суму грн.
| DMP2022LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V
Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.17 грн |
| 5000+ | 18.80 грн |
| 7500+ | 17.99 грн |
| 12500+ | 16.54 грн |
| DMP3035LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
на замовлення 115000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.97 грн |
| 5000+ | 14.60 грн |
| 12500+ | 13.55 грн |
| 25000+ | 12.43 грн |
| DMP3056LSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.55 грн |
| 5000+ | 15.28 грн |
| DMP3056LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 11.99 грн |
| 5000+ | 11.12 грн |
| 7500+ | 10.74 грн |
| DMP3098LSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DMP3100L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V
Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP57D5UFB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Power Dissipation (Max): 425mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V
Description: MOSFET P-CH 50V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Power Dissipation (Max): 425mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V
товару немає в наявності
В кошику
од. на суму грн.
| DNLS160-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
товару немає в наявності
В кошику
од. на суму грн.
| DNLS320A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 20V 2A SOT23-3
Description: TRANS NPN 20V 2A SOT23-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DNLS320E-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 20V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS NPN 20V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
на замовлення 515000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.08 грн |
| 5000+ | 14.19 грн |
| 7500+ | 13.53 грн |
| 12500+ | 12.00 грн |
| 17500+ | 11.59 грн |
| 25000+ | 11.19 грн |
| 62500+ | 10.93 грн |
| DNLS350E-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.48 грн |
| 5000+ | 7.43 грн |
| 7500+ | 7.11 грн |
| DNLS350Y-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 355000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.97 грн |
| 5000+ | 8.28 грн |
| 12500+ | 7.45 грн |
| 25000+ | 6.89 грн |
| 62500+ | 6.47 грн |
| DPLS320A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
товару немає в наявності
В кошику
од. на суму грн.
| DPLS4140E-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 140V 4A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Description: TRANS PNP 140V 4A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
на замовлення 320000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 13.93 грн |
| 5000+ | 12.29 грн |
| 7500+ | 11.71 грн |
| 12500+ | 10.39 грн |
| 17500+ | 10.03 грн |
| 25000+ | 9.68 грн |
| 62500+ | 9.40 грн |
| DXT651-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.98 грн |
| DZT651-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-223
Description: TRANS NPN 60V 3A SOT-223
на замовлення 125007500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DZT658-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT223-3
Description: TRANS NPN 400V 0.5A SOT223-3
товару немає в наявності
В кошику
од. на суму грн.
| DZT751-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 3A SOT-223
Description: TRANS PNP 60V 3A SOT-223
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| DZT955-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 140V 4A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Description: TRANS PNP 140V 4A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
товару немає в наявності
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од. на суму грн.
| GBJ1008-F |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| GBJ1508-F |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 158416 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.48 грн |
| 15+ | 103.08 грн |
| 105+ | 86.04 грн |
| 510+ | 75.52 грн |
| 1005+ | 56.52 грн |
| GBJ2008-F |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 6545 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.65 грн |
| 15+ | 121.61 грн |
| 105+ | 89.30 грн |
| 510+ | 73.45 грн |
| 1005+ | 71.32 грн |
| 2010+ | 58.47 грн |
| GBJ2508-F |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 27666 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.30 грн |
| 15+ | 111.42 грн |
| 105+ | 80.18 грн |
| 510+ | 63.94 грн |
| 1005+ | 63.47 грн |
| 2010+ | 60.02 грн |
| GBJ608-F |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| GBJ808-F |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 555 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 118.28 грн |
| GBU1001 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.94 грн |
| 20+ | 96.15 грн |
| 100+ | 74.05 грн |
| 500+ | 55.56 грн |


























