Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73719) > Сторінка 289 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN32D4SDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.65A SOT363Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA Drain to Source Voltage (Vdss): 30V Power - Max: 290mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SOT-363 |
на замовлення 152468 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DMP1046UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 12V 3.8A 6UDFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 12V Power - Max: 1.4W |
на замовлення 14097 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DMP2060UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.2A 6UDFNSupplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2075 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DMP2200UDW-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.9A SOT363Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Current - Continuous Drain (Id) @ 25°C: 900mA Drain to Source Voltage (Vdss): 20V Power - Max: 450mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
DMP3068L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.3A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
DMP4065S-7 | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.4A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V |
на замовлення 25935 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
DSS4160TQ-7 | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 725 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
FMMT720QTA | Diodes Incorporated |
Description: TRANS PNP 40V 1.5A SOT23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 86705 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S1MWF-7 | Diodes Incorporated |
Description: DIODE GEN PURP 1KV 1A SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SDM2U20SD3-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 20V 2A SOD323Current - Reverse Leakage @ Vr: 200 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 54pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 4916 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
B240Q-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A SMBQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 200pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 67790 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
B540CQ-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 5A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14401 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ZLPM8014JB20TC | Diodes Incorporated |
Description: IC LNB CTLR PWR SUPPLY 20UQFNSupplier Device Package: U-QFN4040-20 Current - Supply: 6mA Applications: Set-Top Boxes Voltage - Supply: 8V ~ 16V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-UFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PDS5100HQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 5A POWERDI 5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DMC1028UFDB-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V/20V 6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMC1029UFDB-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 5.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMC2041UFDB-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 6UDFNPart Status: Active Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMC3400SDW-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.65A SOT363Power - Max: 310mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Drain to Source Voltage (Vdss): 30V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
DMG3404L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4.2A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
DMG3406L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.6A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMN1029UFDB-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 12V 5.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMN10H170SFDE-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.9A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
DMN10H170SVT-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.6A TSOT26Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DMN2041UFDB-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 4.7A 6UDFN |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMN2046U-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMN32D4SDW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.65A SOT363Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA Drain to Source Voltage (Vdss): 30V Power - Max: 290mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DMP2060UFDB-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.2A 6UDFNSupplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DMP2200UDW-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.9A SOT363Current - Continuous Drain (Id) @ 25°C: 900mA Drain to Source Voltage (Vdss): 20V Power - Max: 450mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMN3016LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 10.3A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AP3785HMTR-G1 | Diodes Incorporated |
Description: IC OFFLINE SWITCH FLYBACK 8SO Power (Watts): 15 W Voltage - Start Up: 13 V Fault Protection: Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-SO Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 80kHz Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
|
B2100AF-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SMAFPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 110000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
B360AM-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 3A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DDZ15Q-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 310MW SOD123 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DDZ16Q-7 | Diodes Incorporated |
Description: DIODE ZENER 16V 310MW SOD123 |
на замовлення 648000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DDZ17Q-7 | Diodes Incorporated |
Description: DIODE ZENER 17V 310MW SOD123 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
FMMT493QTA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT-23-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
FMMT593QTA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 (Type DN) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FZT493ATA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT223 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
LMV393M8-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V Supplier Device Package: 8-MSOP Propagation Delay (Max): 600ns Current - Quiescent (Max): 200µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 84mA Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
PD3S160Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 60V 1A POWERDI 323Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
PDS360Q-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 3A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SBR3U60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
|
SBRT2U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 2A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
SBRT4U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 4A 2DFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
ZXMP10A13FQTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 600MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AP3105CVKTR-G1 | Diodes Incorporated | Description: IC PWM CTLR CURR MODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
AP3785TMTR-G1 | Diodes Incorporated |
Description: IC OFFLINE SWITCH FLYBACK 8SOPower (Watts): 15 W Voltage - Start Up: 13 V Fault Protection: Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-SO Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 80kHz Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3486 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AP7335A-33W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 3.3V 300MA SOT25Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.2V @ 300mA PSRR: 65dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SOT-25 Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 80 µA |
на замовлення 19468 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
B2100AF-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 2A SMAFPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 119383 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
B360AM-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 3A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 53866 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DDZ15Q-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 310MW SOD123 |
на замовлення 47873 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DDZ16Q-7 | Diodes Incorporated |
Description: DIODE ZENER 16V 310MW SOD123 |
на замовлення 650811 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DDZ17Q-7 | Diodes Incorporated |
Description: DIODE ZENER 17V 310MW SOD123 |
на замовлення 193366000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
DMN3016LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 10.3A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 9178 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DMP2023UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 7.6A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3110 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
FMMT493QTA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT-23-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FMMT593QTA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 (Type DN) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 10585 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FZT493ATA | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT223 |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
LMV393M8-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V Supplier Device Package: 8-MSOP Propagation Delay (Max): 600ns Current - Quiescent (Max): 200µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 84mA Part Status: Active |
на замовлення 418 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
PD3S160Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 60V 1A POWERDI 323Packaging: Cut Tape (CT) Package / Case: PowerDI™ 323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 38pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 91405 шт: термін постачання 21-31 дні (днів) |
|
| DMN32D4SDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 30V 0.65A SOT363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
на замовлення 152468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.70 грн |
| 14+ | 22.57 грн |
| 100+ | 11.39 грн |
| 500+ | 8.72 грн |
| 1000+ | 6.47 грн |
| DMP1046UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
на замовлення 14097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.54 грн |
| 13+ | 24.61 грн |
| 100+ | 15.76 грн |
| 500+ | 11.18 грн |
| 1000+ | 10.01 грн |
| DMP2060UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2075 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.71 грн |
| 10+ | 55.40 грн |
| 100+ | 36.55 грн |
| 500+ | 26.69 грн |
| 1000+ | 24.24 грн |
| DMP2200UDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET 2P-CH 20V 0.9A SOT363
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| DMP3068L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP4065S-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
на замовлення 25935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 15+ | 21.44 грн |
| 100+ | 13.62 грн |
| 500+ | 9.60 грн |
| 1000+ | 8.57 грн |
| DSS4160TQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.76 грн |
| 13+ | 24.00 грн |
| 25+ | 19.93 грн |
| 50+ | 16.32 грн |
| 100+ | 14.29 грн |
| FMMT720QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 86705 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.46 грн |
| 11+ | 29.06 грн |
| 100+ | 19.77 грн |
| 500+ | 14.59 грн |
| 1000+ | 13.28 грн |
| S1MWF-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Description: DIODE GEN PURP 1KV 1A SOD123F
товару немає в наявності
В кошику
од. на суму грн.
| SDM2U20SD3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A SOD323
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 2A SOD323
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 4916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 27+ | 11.47 грн |
| 100+ | 9.34 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.87 грн |
| B240Q-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 67790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 19+ | 16.00 грн |
| 100+ | 13.07 грн |
| 500+ | 9.21 грн |
| 1000+ | 8.23 грн |
| B540CQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14401 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.62 грн |
| 10+ | 39.70 грн |
| 25+ | 33.15 грн |
| 50+ | 27.33 грн |
| 100+ | 24.10 грн |
| ZLPM8014JB20TC |
![]() |
Виробник: Diodes Incorporated
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PDS5100HQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMC1028UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMC1029UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMC2041UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Description: MOSFET N/P-CH 20V 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMC3400SDW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Description: MOSFET N/P-CH 30V 0.65A SOT363
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.91 грн |
| 20000+ | 3.44 грн |
| 30000+ | 3.29 грн |
| DMG3404L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMG3406L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN1029UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN10H170SFDE-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 2.9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 10.80 грн |
| 20000+ | 9.67 грн |
| DMN10H170SVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 10.61 грн |
| DMN2041UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN2046U-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Description: MOSFET N-CH 20V 3.4A SOT23
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN32D4SDW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 4.98 грн |
| 30000+ | 4.71 грн |
| 50000+ | 3.90 грн |
| DMP2060UFDB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMP2200UDW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Description: MOSFET 2P-CH 20V 0.9A SOT363
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN3016LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.57 грн |
| 5000+ | 10.94 грн |
| 7500+ | 10.90 грн |
| AP3785HMTR-G1 |
Виробник: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| B2100AF-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 9.16 грн |
| 20000+ | 8.16 грн |
| 30000+ | 7.82 грн |
| 50000+ | 6.98 грн |
| 70000+ | 6.77 грн |
| B360AM-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 13.46 грн |
| 15000+ | 11.43 грн |
| DDZ15Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
Description: DIODE ZENER 15V 310MW SOD123
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.28 грн |
| 6000+ | 3.58 грн |
| 15000+ | 3.04 грн |
| 30000+ | 2.69 грн |
| DDZ16Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
Description: DIODE ZENER 16V 310MW SOD123
на замовлення 648000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.28 грн |
| 6000+ | 3.58 грн |
| 15000+ | 3.04 грн |
| 30000+ | 2.69 грн |
| 75000+ | 2.52 грн |
| 150000+ | 2.18 грн |
| DDZ17Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
Description: DIODE ZENER 17V 310MW SOD123
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| FMMT493QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FMMT593QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.63 грн |
| 6000+ | 10.26 грн |
| FZT493ATA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
Description: TRANS NPN 100V 1A SOT223
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LMV393M8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PD3S160Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.94 грн |
| 6000+ | 10.43 грн |
| 9000+ | 10.19 грн |
| 15000+ | 9.41 грн |
| 21000+ | 8.72 грн |
| 30000+ | 8.53 грн |
| PDS360Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 15.32 грн |
| SBR3U60SA-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SBRT2U45LP-7 |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SBR 45V 2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SBRT4U45LP-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 4A 2DFN
Description: DIODE SBR 45V 4A 2DFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| ZXMP10A13FQTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.25 грн |
| 9000+ | 22.47 грн |
| AP3105CVKTR-G1 |
Виробник: Diodes Incorporated
Description: IC PWM CTLR CURR MODE
Description: IC PWM CTLR CURR MODE
товару немає в наявності
В кошику
од. на суму грн.
| AP3785TMTR-G1 |
![]() |
Виробник: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3486 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.79 грн |
| 10+ | 40.15 грн |
| 25+ | 36.14 грн |
| 100+ | 29.79 грн |
| 250+ | 27.80 грн |
| 500+ | 26.61 грн |
| 1000+ | 25.21 грн |
| AP7335A-33W5-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 3.3V 300MA SOT25
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Description: IC REG LINEAR 3.3V 300MA SOT25
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
на замовлення 19468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 52.83 грн |
| 25+ | 49.60 грн |
| 100+ | 38.00 грн |
| 250+ | 35.29 грн |
| 500+ | 30.03 грн |
| 1000+ | 23.63 грн |
| B2100AF-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 119383 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.03 грн |
| 11+ | 27.78 грн |
| 100+ | 17.78 грн |
| 500+ | 12.63 грн |
| 1000+ | 11.32 грн |
| 2000+ | 10.21 грн |
| 5000+ | 8.87 грн |
| B360AM-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 53866 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.14 грн |
| 10+ | 36.46 грн |
| 25+ | 30.37 грн |
| 50+ | 25.00 грн |
| 100+ | 22.04 грн |
| DDZ15Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
Description: DIODE ZENER 15V 310MW SOD123
на замовлення 47873 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 16+ | 19.25 грн |
| 100+ | 10.20 грн |
| 500+ | 6.30 грн |
| 1000+ | 4.29 грн |
| DDZ16Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
Description: DIODE ZENER 16V 310MW SOD123
на замовлення 650811 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 16+ | 19.25 грн |
| 100+ | 10.20 грн |
| 500+ | 6.30 грн |
| 1000+ | 4.29 грн |
| DDZ17Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
Description: DIODE ZENER 17V 310MW SOD123
на замовлення 193366000 шт:
термін постачання 21-31 дні (днів)
| DMN3016LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 9178 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.30 грн |
| 10+ | 33.74 грн |
| 100+ | 20.73 грн |
| 500+ | 15.66 грн |
| 1000+ | 14.10 грн |
| DMP2023UFDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 7.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 7.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.89 грн |
| 10+ | 44.00 грн |
| 100+ | 28.82 грн |
| 500+ | 20.91 грн |
| 1000+ | 18.93 грн |
| FMMT493QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.03 грн |
| 11+ | 27.70 грн |
| 100+ | 17.76 грн |
| FMMT593QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 10585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.16 грн |
| 11+ | 29.66 грн |
| 100+ | 19.07 грн |
| 500+ | 13.64 грн |
| 1000+ | 12.26 грн |
| FZT493ATA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
Description: TRANS NPN 100V 1A SOT223
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.52 грн |
| 10+ | 44.08 грн |
| 100+ | 33.75 грн |
| LMV393M8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
на замовлення 418 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 19+ | 16.15 грн |
| 25+ | 14.40 грн |
| 100+ | 11.65 грн |
| 250+ | 10.77 грн |
| PD3S160Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
на замовлення 91405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.97 грн |
| 13+ | 24.98 грн |
| 100+ | 19.97 грн |
| 500+ | 14.25 грн |
| 1000+ | 12.80 грн |




























