Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5612) > Сторінка 28 з 94
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MBRTA60045 | GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY 45V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA60045L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA60045R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA60045RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA60060 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA60060R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA60080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA60080R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 300A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA800100 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA800100R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA800150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA800150R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80020 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA800200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA800200R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80020L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80020R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80020RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80030 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80030L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80030R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80030RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80035 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80035L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80035R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80035RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80040 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80040L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80040R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80040RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80045 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80045L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80045R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80045RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80060 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80060R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRTA80080R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 400A 3TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
| MURF30005 | GeneSiC Semiconductor | Description: DIODE GEN PURP 50V 150A TO244 |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30005R | GeneSiC Semiconductor | Description: DIODE GEN PURP 50V 150A TO244 |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30010 | GeneSiC Semiconductor | Description: DIODE GEN PURP 100V 150A TO244 |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30010R | GeneSiC Semiconductor | Description: DIODE GEN PURP 100V 150A TO244 |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30020 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30020R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30040 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30040R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30060 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF30060R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40005 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 200A TO244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40005R | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 200A TO244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40010 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40010R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40020 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40020R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40040 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40040R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40060 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURF40060R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURH7005 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MURH7005R | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MBRTA60045 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Description: DIODE SCHOTTKY 45V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA60045L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Description: DIODE SCHOTTKY 45V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA60045R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Description: DIODE SCHOTTKY 45V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA60045RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3TOWER
Description: DIODE SCHOTTKY 45V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA60060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 300A 3TOWER
Description: DIODE SCHOTTKY 60V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA60060R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 300A 3TOWER
Description: DIODE SCHOTTKY 60V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA60080 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 300A 3TOWER
Description: DIODE SCHOTTKY 80V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA60080R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 300A 3TOWER
Description: DIODE SCHOTTKY 80V 300A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA800100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 400A 3TOWER
Description: DIODE SCHOTTKY 100V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA800100R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 400A 3TOWER
Description: DIODE SCHOTTKY 100V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA800150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 400A 3TOWER
Description: DIODE SCHOTTKY 150V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA800150R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 400A 3TOWER
Description: DIODE SCHOTTKY 150V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80020 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Description: DIODE SCHOTTKY 20V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA800200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 400A 3TOWER
Description: DIODE SCHOTTKY 200V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA800200R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 400A 3TOWER
Description: DIODE SCHOTTKY 200V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80020L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Description: DIODE SCHOTTKY 20V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80020R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Description: DIODE SCHOTTKY 20V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80020RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 400A 3TOWER
Description: DIODE SCHOTTKY 20V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80030 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Description: DIODE SCHOTTKY 30V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80030L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Description: DIODE SCHOTTKY 30V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80030R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Description: DIODE SCHOTTKY 30V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80030RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 400A 3TOWER
Description: DIODE SCHOTTKY 30V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80035 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Description: DIODE SCHOTTKY 35V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80035L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Description: DIODE SCHOTTKY 35V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80035R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Description: DIODE SCHOTTKY 35V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80035RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 400A 3TOWER
Description: DIODE SCHOTTKY 35V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Description: DIODE SCHOTTKY 40V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80040L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Description: DIODE SCHOTTKY 40V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Description: DIODE SCHOTTKY 40V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80040RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
Description: DIODE SCHOTTKY 40V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80045 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Description: DIODE SCHOTTKY 45V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80045L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Description: DIODE SCHOTTKY 45V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80045R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Description: DIODE SCHOTTKY 45V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80045RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
Description: DIODE SCHOTTKY 45V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
Description: DIODE SCHOTTKY 60V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80060R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
Description: DIODE SCHOTTKY 60V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80080 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
Description: DIODE SCHOTTKY 80V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBRTA80080R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
Description: DIODE SCHOTTKY 80V 400A 3TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MURF30005 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
Description: DIODE GEN PURP 50V 150A TO244
товару немає в наявності
В кошику
од. на суму грн.
| MURF30005R |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
Description: DIODE GEN PURP 50V 150A TO244
товару немає в наявності
В кошику
од. на суму грн.
| MURF30010 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
Description: DIODE GEN PURP 100V 150A TO244
товару немає в наявності
В кошику
од. на суму грн.
| MURF30010R |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
Description: DIODE GEN PURP 100V 150A TO244
товару немає в наявності
В кошику
од. на суму грн.
| MURF30020 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF30020R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF30040 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF30040R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF30060 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF30060R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF40005 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF40005R |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF40010 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF40010R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF40020 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF40020R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURF40040 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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| MURF40040R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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| MURF40060 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| MURF40060R |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| MURH7005 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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| MURH7005R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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