Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5688) > Сторінка 5 з 95
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 2W04M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2W06M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2W08M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2W10M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A WOMPackaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR101 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 10A BR-10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR102 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR104 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 4962 шт: термін постачання 21-31 дні (днів) |
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| BR106 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 600V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR108 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 10A BR-10Packaging: Bulk Package / Case: 4-Square, BR-10 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: BR-10 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR305 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 3A BR-3Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR31 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 3A BR-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR310 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR32 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 200V 3A BR-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR34 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 3A BR-3Packaging: Bulk Package / Case: 4-Square, BR-3 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-3 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR36 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 3A BR-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR38 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 800V 3A BR-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR61 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 100V 6A BR-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR610 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BR62 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1136 шт: термін постачання 21-31 дні (днів) |
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| BR64 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR66 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 6A BR-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR68 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 6A BR-6Packaging: Bulk Package / Case: 4-Square, BR-6 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-6 Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BR805 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 8A BR-8Packaging: Bulk Package / Case: 4-Square, BR-8 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-8 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR81 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 8A BR-8Packaging: Bulk Package / Case: 4-Square, BR-8 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: BR-8 Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 369 шт: термін постачання 21-31 дні (днів) |
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| BR82 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 200V 8A BR-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR84 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 400V 8A BR-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR86 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 600V 8A BR-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR88 | GeneSiC Semiconductor |
Description: DIODE BRIDGE 800V 8A BR-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DB101G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 50V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 2440 шт: термін постачання 21-31 дні (днів) |
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| DB102G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DB103G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 417 шт: термін постачання 21-31 дні (днів) |
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| DB104G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 2357 шт: термін постачання 21-31 дні (днів) |
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| DB105G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DB106G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DB107G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 1A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12B02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12B05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12BR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12BR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12D05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12DR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12DR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12G02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FR12G05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FR12GR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12GR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12J02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12J05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FR12JR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FR12JR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12K05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR12KR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 800V 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FR12M05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 12A DO4 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
| FR12MR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV 12A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR16B02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 16A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR16B05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 100V 16A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR16BR02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 16A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR16BR05 | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 16A DO4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FR16D02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 16A DO4 |
товару немає в наявності |
В кошику од. на суму грн. |
| 2W04M |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| 2W06M |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| 2W08M |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| 2W10M |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| BR101 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 10A BR-10
Description: BRIDGE RECT 1P 100V 10A BR-10
товару немає в наявності
В кошику
од. на суму грн.
| BR102 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| BR104 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4962 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.96 грн |
| 10+ | 113.36 грн |
| 25+ | 101.19 грн |
| 100+ | 79.86 грн |
| 250+ | 71.28 грн |
| 500+ | 65.38 грн |
| 1000+ | 58.96 грн |
| 2500+ | 52.57 грн |
| BR106 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BR108 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BR305 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| BR31 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 3A BR-3
Description: DIODE BRIDGE 100V 3A BR-3
товару немає в наявності
В кошику
од. на суму грн.
| BR310 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| BR32 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 3A BR-3
Description: DIODE BRIDGE 200V 3A BR-3
товару немає в наявності
В кошику
од. на суму грн.
| BR34 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A BR-3
Packaging: Bulk
Package / Case: 4-Square, BR-3
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-3
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| BR36 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 3A BR-3
Description: DIODE BRIDGE 600V 3A BR-3
товару немає в наявності
В кошику
од. на суму грн.
| BR38 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 3A BR-3
Description: DIODE BRIDGE 800V 3A BR-3
товару немає в наявності
В кошику
од. на суму грн.
| BR61 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 100V 6A BR-6
Description: DIODE BRIDGE 100V 6A BR-6
товару немає в наявності
В кошику
од. на суму грн.
| BR610 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| BR62 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1136 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.87 грн |
| 10+ | 90.37 грн |
| 25+ | 79.71 грн |
| 100+ | 61.80 грн |
| 250+ | 54.50 грн |
| 500+ | 49.57 грн |
| 1000+ | 44.34 грн |
| BR64 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| BR66 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 6A BR-6
Description: DIODE BRIDGE 600V 6A BR-6
товару немає в наявності
В кошику
од. на суму грн.
| BR68 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BR805 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| BR81 |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 369 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.91 грн |
| 10+ | 102.94 грн |
| 25+ | 91.51 грн |
| 100+ | 71.91 грн |
| 250+ | 63.91 грн |
| BR82 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 200V 8A BR-8
Description: DIODE BRIDGE 200V 8A BR-8
товару немає в наявності
В кошику
од. на суму грн.
| BR84 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 400V 8A BR-8
Description: DIODE BRIDGE 400V 8A BR-8
товару немає в наявності
В кошику
од. на суму грн.
| BR86 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 600V 8A BR-8
Description: DIODE BRIDGE 600V 8A BR-8
товару немає в наявності
В кошику
од. на суму грн.
| BR88 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE BRIDGE 800V 8A BR-8
Description: DIODE BRIDGE 800V 8A BR-8
товару немає в наявності
В кошику
од. на суму грн.
| DB101G |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.17 грн |
| 10+ | 53.46 грн |
| 25+ | 43.18 грн |
| 100+ | 29.49 грн |
| 250+ | 23.87 грн |
| 500+ | 20.33 грн |
| 1000+ | 17.04 грн |
| DB102G |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| DB103G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.44 грн |
| 10+ | 58.15 грн |
| 25+ | 47.03 грн |
| 100+ | 32.10 грн |
| 250+ | 25.98 грн |
| DB104G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2357 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.70 грн |
| 10+ | 52.03 грн |
| 25+ | 42.03 грн |
| 100+ | 28.70 грн |
| 250+ | 23.22 грн |
| 500+ | 19.79 грн |
| 1000+ | 16.58 грн |
| DB105G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| DB106G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| DB107G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| FR12B02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
Description: DIODE GEN PURP 100V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12B05 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 12A DO4
Description: DIODE GEN PURP 100V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12BR02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12BR05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12D02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE GEN PURP 200V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| FR12D05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Description: DIODE GEN PURP 200V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12DR02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Description: DIODE GEN PURP REV 200V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12DR05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Description: DIODE GEN PURP REV 200V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12G02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12G05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12GR02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Description: DIODE GEN PURP REV 400V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12GR05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Description: DIODE GEN PURP REV 400V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12J02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12J05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12JR02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Description: DIODE GEN PURP REV 600V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12JR05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Description: DIODE GEN PURP REV 600V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12K05 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
Description: DIODE GEN PURP 800V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12KR05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 12A DO4
Description: DIODE GEN PURP REV 800V 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR12M05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 12A DO4
Description: DIODE GEN PURP 1KV 12A DO4
на замовлення 20 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FR12MR05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 12A DO4
Description: DIODE GEN PURP REV 1KV 12A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR16B02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 16A DO4
Description: DIODE GEN PURP 100V 16A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR16B05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 16A DO4
Description: DIODE GEN PURP 100V 16A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR16BR02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 16A DO4
Description: DIODE GEN PURP REV 100V 16A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR16BR05 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 16A DO4
Description: DIODE GEN PURP REV 100V 16A DO4
товару немає в наявності
В кошику
од. на суму грн.
| FR16D02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 16A DO4
Description: DIODE GEN PURP 200V 16A DO4
товару немає в наявності
В кошику
од. на суму грн.
