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MURH10020 GeneSiC Semiconductor murh10005.pdf Description: DIODE GEN PURP 200V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10020R MURH10020R GeneSiC Semiconductor murh10020r-3481217.pdf Diode Modules SI S-FST RECOV D-68 50-600V100A200P/141R
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MURH10020R GeneSiC Semiconductor murh10005.pdf Description: DIODE GP REV 200V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10040 MURH10040 GeneSiC Semiconductor murh10040-3482648.pdf Diode Modules SI S-FST RECOV D-67 50-600V100A400P/280R
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MURH10040 GeneSiC Semiconductor murh10040.pdf Description: DIODE GEN PURP 400V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10040R GeneSiC Semiconductor murh10040.pdf Description: DIODE GP REV 400V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10040R MURH10040R GeneSiC Semiconductor murh10040r-3482727.pdf Diode Modules SI S-FST RECOV D-67 50-600V100A400P/280R
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MURH10060 MURH10060 GeneSiC Semiconductor 11murh10040_thru_murh10060r.pdf Rectifier Diode Switching Si 600V 100A 110ns 2-Pin(2+Tab) Case D-67
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MURH10060 MURH10060 GeneSiC Semiconductor murh10040.pdf Description: DIODE GEN PURP 600V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH10060 MURH10060 GeneSiC Semiconductor murh10060-3482526.pdf Diode Modules SI S-FST RECOV D-67 50-600V100A600P/420R
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MURH10060R MURH10060R GeneSiC Semiconductor murh10040.pdf Description: DIODE GP REV 600V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH10060R MURH10060R GeneSiC Semiconductor murh10060r-3482849.pdf Diode Modules SI S-FST RECOV D-67 50-600V100A600P/420R
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MURH7005 MURH7005 GeneSiC Semiconductor murh7005-1509867.pdf Rectifiers Super Fast Recovery - 50 V - 70 A - D-67 (HALF PAK)
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MURH7005 GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7005R MURH7005R GeneSiC Semiconductor murh7005r-1509928.pdf Rectifiers Super Fast Recovery - 50 V - 70 A - D-67 (HALF PAK)
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MURH7005R GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7010 GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7010 MURH7010 GeneSiC Semiconductor murh7010-3482712.pdf Diode Modules 100V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7010R MURH7010R GeneSiC Semiconductor murh7010r-3482291.pdf Diode Modules 100V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURH7010R GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7020 MURH7020 GeneSiC Semiconductor murh7020-3482604.pdf Diode Modules 200V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7020 MURH7020 GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURH7020R MURH7020R GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURH7020R MURH7020R GeneSiC Semiconductor murh7020r-3482621.pdf Diode Modules 200V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURH7040 GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURH7040 MURH7040 GeneSiC Semiconductor murh7040-3481535.pdf Diode Modules 400V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7040R MURH7040R GeneSiC Semiconductor murh7040r-3482094.pdf Diode Modules 400V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURH7040R GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
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MURH7060 GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7060 MURH7060 GeneSiC Semiconductor murh7060-3482827.pdf Diode Modules 600V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7060R GeneSiC Semiconductor murh7040.pdf Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7060R MURH7060R GeneSiC Semiconductor murh7060r-3482691.pdf Diode Modules 600V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURT10005 MURT10005 GeneSiC Semiconductor murt10005-1857115.pdf Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V 100A 50P/35R
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MURT10005 MURT10005 GeneSiC Semiconductor murt10005.pdf Description: DIODE MODULE GP 50V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10005R MURT10005R GeneSiC Semiconductor murt10005_thru_murt10020r-1132897.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V 100A 50P/35R
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MURT10005R MURT10005R GeneSiC Semiconductor murt10005.pdf Description: DIODE MODULE GP 50V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10010 MURT10010 GeneSiC Semiconductor murt10005.pdf Description: DIODE MODULE 100V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10010 MURT10010 GeneSiC Semiconductor murt10005_thru_murt10020r-1132897.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V 100A100P/71R
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MURT10010R MURT10010R GeneSiC Semiconductor murt10005.pdf Description: DIODE MODULE 100V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10010R MURT10010R GeneSiC Semiconductor murt10005_thru_murt10020r-1132897.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V 100A100P/71R
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MURT10020 MURT10020 GeneSiC Semiconductor murt10005.pdf Description: DIODE ARRAY GP 200V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10020 MURT10020 GeneSiC Semiconductor murt10005_thru_murt10020r-1132897.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V100A200P/141R
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MURT10020R MURT10020R GeneSiC Semiconductor murt10005_thru_murt10020r-1132897.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V100A200P/141R
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MURT10020R MURT10020R GeneSiC Semiconductor murt10005.pdf Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10040 MURT10040 GeneSiC Semiconductor murt10040-2451894.pdf Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A400P/283R
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MURT10040 MURT10040 GeneSiC Semiconductor murt10040.pdf Description: DIODE MODULE GP 400V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10040R MURT10040R GeneSiC Semiconductor murt10040.pdf Description: DIODE MODULE GP 400V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10040R MURT10040R GeneSiC Semiconductor murt10040r-2452616.pdf Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A400P/283R
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MURT10060 MURT10060 GeneSiC Semiconductor murt10040.pdf Description: DIODE ARRAY GP 600V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10060 MURT10060 GeneSiC Semiconductor murt10060-2452462.pdf Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A600P/424R
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MURT10060R MURT10060R GeneSiC Semiconductor murt10060r-2452184.pdf Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A600P/424R
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MURT10060R MURT10060R GeneSiC Semiconductor murt10040.pdf Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT20005 GeneSiC Semiconductor murt20005_thru_murt20020r-1133708.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V 200A 50P/35R
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MURT20005 MURT20005 GeneSiC Semiconductor murt20005_thru_murt20020r.pdf Description: DIODE MODULE 50V 200A 3TOWER
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MURT20005R MURT20005R GeneSiC Semiconductor murt20005_thru_murt20020r.pdf Description: DIODE MODULE 50V 200A 3TOWER
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MURT20005R MURT20005R GeneSiC Semiconductor murt20005_thru_murt20020r-1133708.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V 200A 50P/35R
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MURT20010 MURT20010 GeneSiC Semiconductor murt20005.pdf Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT20010 MURT20010 GeneSiC Semiconductor murt20010-2452108.pdf Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V 200A100P/71R
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MURT20010R MURT20010R GeneSiC Semiconductor murt20010r-2452619.pdf Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V 200A100P/71R
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MURT20010R MURT20010R GeneSiC Semiconductor murt20005.pdf Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10020 murh10005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10020R murh10020r-3481217.pdf
MURH10020R
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV D-68 50-600V100A200P/141R
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MURH10020R murh10005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GP REV 200V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10040 murh10040-3482648.pdf
MURH10040
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV D-67 50-600V100A400P/280R
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MURH10040 murh10040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10040R murh10040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GP REV 400V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH10040R murh10040r-3482727.pdf
MURH10040R
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV D-67 50-600V100A400P/280R
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MURH10060 11murh10040_thru_murh10060r.pdf
MURH10060
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching Si 600V 100A 110ns 2-Pin(2+Tab) Case D-67
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MURH10060 murh10040.pdf
MURH10060
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH10060 murh10060-3482526.pdf
MURH10060
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV D-67 50-600V100A600P/420R
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MURH10060R murh10040.pdf
MURH10060R
Виробник: GeneSiC Semiconductor
Description: DIODE GP REV 600V 100A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 100A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH10060R murh10060r-3482849.pdf
MURH10060R
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV D-67 50-600V100A600P/420R
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MURH7005 murh7005-1509867.pdf
MURH7005
Виробник: GeneSiC Semiconductor
Rectifiers Super Fast Recovery - 50 V - 70 A - D-67 (HALF PAK)
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MURH7005 murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7005R murh7005r-1509928.pdf
MURH7005R
Виробник: GeneSiC Semiconductor
Rectifiers Super Fast Recovery - 50 V - 70 A - D-67 (HALF PAK)
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MURH7005R murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURH7010 murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7010 murh7010-3482712.pdf
MURH7010
Виробник: GeneSiC Semiconductor
Diode Modules 100V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7010R murh7010r-3482291.pdf
MURH7010R
Виробник: GeneSiC Semiconductor
Diode Modules 100V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURH7010R murh7005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MURH7020 murh7020-3482604.pdf
MURH7020
Виробник: GeneSiC Semiconductor
Diode Modules 200V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7020 murh7005.pdf
MURH7020
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURH7020R murh7005.pdf
MURH7020R
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MURH7020R murh7020r-3482621.pdf
MURH7020R
Виробник: GeneSiC Semiconductor
Diode Modules 200V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURH7040 murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURH7040 murh7040-3481535.pdf
MURH7040
Виробник: GeneSiC Semiconductor
Diode Modules 400V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7040R murh7040r-3482094.pdf
MURH7040R
Виробник: GeneSiC Semiconductor
Diode Modules 400V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURH7040R murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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MURH7060 murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7060 murh7060-3482827.pdf
MURH7060
Виробник: GeneSiC Semiconductor
Diode Modules 600V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
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MURH7060R murh7040.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURH7060R murh7060r-3482691.pdf
MURH7060R
Виробник: GeneSiC Semiconductor
Diode Modules 600V 70A D-67 (HALF PAK) Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
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MURT10005 murt10005-1857115.pdf
MURT10005
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V 100A 50P/35R
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MURT10005 murt10005.pdf
MURT10005
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10005R murt10005_thru_murt10020r-1132897.pdf
MURT10005R
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V 100A 50P/35R
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MURT10005R murt10005.pdf
MURT10005R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10010 murt10005.pdf
MURT10010
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
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MURT10010 murt10005_thru_murt10020r-1132897.pdf
MURT10010
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V 100A100P/71R
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MURT10010R murt10005.pdf
MURT10010R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10010R murt10005_thru_murt10020r-1132897.pdf
MURT10010R
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V 100A100P/71R
товару немає в наявності
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MURT10020 murt10005.pdf
MURT10020
Виробник: GeneSiC Semiconductor
Description: DIODE ARRAY GP 200V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10020 murt10005_thru_murt10020r-1132897.pdf
MURT10020
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V100A200P/141R
товару немає в наявності
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MURT10020R murt10005_thru_murt10020r-1132897.pdf
MURT10020R
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V100A200P/141R
товару немає в наявності
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MURT10020R murt10005.pdf
MURT10020R
Виробник: GeneSiC Semiconductor
Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10040 murt10040-2451894.pdf
MURT10040
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A400P/283R
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MURT10040 murt10040.pdf
MURT10040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10040R murt10040.pdf
MURT10040R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10040R murt10040r-2452616.pdf
MURT10040R
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A400P/283R
товару немає в наявності
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MURT10060 murt10040.pdf
MURT10060
Виробник: GeneSiC Semiconductor
Description: DIODE ARRAY GP 600V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT10060 murt10060-2452462.pdf
MURT10060
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A600P/424R
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MURT10060R murt10060r-2452184.pdf
MURT10060R
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V100A600P/424R
товару немає в наявності
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MURT10060R murt10040.pdf
MURT10060R
Виробник: GeneSiC Semiconductor
Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT20005 murt20005_thru_murt20020r-1133708.pdf
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V 200A 50P/35R
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MURT20005 murt20005_thru_murt20020r.pdf
MURT20005
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
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MURT20005R murt20005_thru_murt20020r.pdf
MURT20005R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
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MURT20005R murt20005_thru_murt20020r-1133708.pdf
MURT20005R
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V 200A 50P/35R
товару немає в наявності
В кошику  од. на суму  грн.
MURT20010 murt20005.pdf
MURT20010
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MURT20010 murt20010-2452108.pdf
MURT20010
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V 200A100P/71R
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MURT20010R murt20010r-2452619.pdf
MURT20010R
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV 3TWR 50-600V 200A100P/71R
товару немає в наявності
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MURT20010R murt20005.pdf
MURT20010R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
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