Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (4217) > Сторінка 49 з 71
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MBRH30030L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 300A D67 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRH30030RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 300A D67 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRH30035L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 300A D67 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRH30035RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 300A D67 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRH30040L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 300A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 300A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRH30040RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 300A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 300A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRH30045L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A D67 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRH30045RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A D67 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120100 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120100R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120100R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120150 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120150 | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 150V 120A Forward |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120150R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120150R | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 150V 120A Reverse |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12020 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 20P/14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120200 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 200V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120200 | GeneSiC Semiconductor |
Diode Modules 200V 120A Forward |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120200R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 200V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT120200R | GeneSiC Semiconductor |
Diode Modules 200V 120A Reverse |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12020R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 20P/14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12030 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 30P/21 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12030R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 30P/21 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12035 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 35P/25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12035R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 35P/25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12040 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 40P/28 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12040R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 40P/28 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12045 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 45P32R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12045R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 45P/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12060 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 60P42R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12060R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 60P42R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12080 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 80P57R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT12080R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 80P57R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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MBRT200100 | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200100R | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200100R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200150 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 150V 200A Forward |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200150 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200150R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 150V 200A Reverse |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200150R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20020 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20020 | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 20P/14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200200 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200200 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 200A Forward |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200200R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT200200R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 200A Reverse |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20020R | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 20P/14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20020R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20030 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20030 | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20030R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20030R | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20035 | GeneSiC Semiconductor |
Diode Modules 35V 200A Schottky Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20035 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20035R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20035R | GeneSiC Semiconductor |
Diode Modules 35V 200A Schottky Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20040 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 40V 200A Schottky Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MBRT20040 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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| MBRH30030L |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A D67
Description: DIODE SCHOTTKY 30V 300A D67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH30030RL |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A D67
Description: DIODE SCHOTTKY 30V 300A D67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH30035L |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A D67
Description: DIODE SCHOTTKY 35V 300A D67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH30035RL |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A D67
Description: DIODE SCHOTTKY 35V 300A D67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH30040L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 300A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE SCHOTTKY 40V 300A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 300A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH30040RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 300A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE SCHOTTKY 40V 300A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 300A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH30045L |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A D67
Description: DIODE SCHOTTKY 45V 300A D67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH30045RL |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A D67
Description: DIODE SCHOTTKY 45V 300A D67
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120100 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120100 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120100R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120100R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A100P/70
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120150 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120150 |
![]() |
Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 150V 120A Forward
Schottky Diodes & Rectifiers 150V 120A Forward
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120150R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120150R |
![]() |
Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 150V 120A Reverse
Schottky Diodes & Rectifiers 150V 120A Reverse
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12020 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 20P/14
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 20P/14
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120200 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120200 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 200V 120A Forward
Diode Modules 200V 120A Forward
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120200R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120200R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 200V 120A Reverse
Diode Modules 200V 120A Reverse
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12020R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 20P/14
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 20P/14
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12030 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 30P/21
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 30P/21
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12030R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 30P/21
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 30P/21
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12035 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 35P/25
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 35P/25
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12035R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 35P/25
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 35P/25
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12040 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 40P/28
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 40P/28
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12040R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 40P/28
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 40P/28
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12045 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 45P32R
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 45P32R
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12045R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 45P/32
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 45P/32
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12060 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 60P42R
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 60P42R
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12060R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 60P42R
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 60P42R
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12080 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 80P57R
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 80P57R
товару немає в наявності
В кошику
од. на суму грн.
| MBRT12080R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 80P57R
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 120A 80P57R
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200100 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6893.97 грн |
| 10+ | 5822.64 грн |
| 25+ | 5526.66 грн |
| 50+ | 4985.86 грн |
| MBRT200100 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200100R |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A100P/70
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200100R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200150 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 150V 200A Forward
Discrete Semiconductor Modules 150V 200A Forward
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200150 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200150R |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 150V 200A Reverse
Discrete Semiconductor Modules 150V 200A Reverse
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200150R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20020 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20020 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 20P/14
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 20P/14
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| MBRT200200 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200200 |
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Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 200A Forward
Discrete Semiconductor Modules 200V 200A Forward
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В кошику
од. на суму грн.
| MBRT200200R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT200200R |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 200A Reverse
Discrete Semiconductor Modules 200V 200A Reverse
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20020R |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 20P/14
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 20P/14
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20020R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20030 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20030 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20030R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20030R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21
Diode Modules SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20035 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 35V 200A Schottky Recovery
Diode Modules 35V 200A Schottky Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20035 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20035R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20035R |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 35V 200A Schottky Recovery
Diode Modules 35V 200A Schottky Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20040 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 40V 200A Schottky Recovery
Discrete Semiconductor Modules 40V 200A Schottky Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MBRT20040 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7470.02 грн |
| 10+ | 6309.33 грн |
| 25+ | 5988.63 грн |

